TW303522B - - Google Patents

Download PDF

Info

Publication number
TW303522B
TW303522B TW084111414A TW84111414A TW303522B TW 303522 B TW303522 B TW 303522B TW 084111414 A TW084111414 A TW 084111414A TW 84111414 A TW84111414 A TW 84111414A TW 303522 B TW303522 B TW 303522B
Authority
TW
Taiwan
Prior art keywords
memory
memory cell
data
arrays
array
Prior art date
Application number
TW084111414A
Other languages
English (en)
Chinese (zh)
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW303522B publication Critical patent/TW303522B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0893—Caches characterised by their organisation or structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Databases & Information Systems (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
TW084111414A 1994-09-22 1995-10-28 TW303522B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06227639A JP3135795B2 (ja) 1994-09-22 1994-09-22 ダイナミック型メモリ

Publications (1)

Publication Number Publication Date
TW303522B true TW303522B (enExample) 1997-04-21

Family

ID=16864038

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084111414A TW303522B (enExample) 1994-09-22 1995-10-28

Country Status (7)

Country Link
US (1) US5586078A (enExample)
EP (2) EP0704847B1 (enExample)
JP (1) JP3135795B2 (enExample)
KR (1) KR0184091B1 (enExample)
CN (1) CN1134016C (enExample)
DE (2) DE69536100D1 (enExample)
TW (1) TW303522B (enExample)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5901105A (en) * 1995-04-05 1999-05-04 Ong; Adrian E Dynamic random access memory having decoding circuitry for partial memory blocks
US5787267A (en) * 1995-06-07 1998-07-28 Monolithic System Technology, Inc. Caching method and circuit for a memory system with circuit module architecture
JPH09161476A (ja) * 1995-10-04 1997-06-20 Toshiba Corp 半導体メモリ及びそのテスト回路、並びにデ−タ転送システム
JP3277108B2 (ja) * 1995-10-31 2002-04-22 インターナショナル・ビジネス・マシーンズ・コーポレーション Ｄｒａｍアレイ
TW348266B (en) 1996-03-11 1998-12-21 Toshiba Co Ltd Semiconductor memory device
JP3477018B2 (ja) * 1996-03-11 2003-12-10 株式会社東芝 半導体記憶装置
JPH09288888A (ja) * 1996-04-22 1997-11-04 Mitsubishi Electric Corp 半導体記憶装置
US6044433A (en) * 1996-08-09 2000-03-28 Micron Technology, Inc. DRAM cache
JP2927344B2 (ja) * 1996-08-09 1999-07-28 日本電気株式会社 半導体記憶回路
JP3280867B2 (ja) * 1996-10-03 2002-05-13 シャープ株式会社 半導体記憶装置
AU5702898A (en) * 1996-12-26 1998-07-31 Rambus Inc. Method and apparatus for sharing sense amplifiers between memory banks
US6075743A (en) * 1996-12-26 2000-06-13 Rambus Inc. Method and apparatus for sharing sense amplifiers between memory banks
US6134172A (en) * 1996-12-26 2000-10-17 Rambus Inc. Apparatus for sharing sense amplifiers between memory banks
KR100242998B1 (ko) * 1996-12-30 2000-02-01 김영환 잡음특성을 개선한 셀 어레이 및 센스앰프의 구조
US5774408A (en) * 1997-01-28 1998-06-30 Micron Technology, Inc. DRAM architecture with combined sense amplifier pitch
US5995437A (en) * 1997-06-02 1999-11-30 Townsend And Townsend And Crew Llp Semiconductor memory and method of accessing memory arrays
US6084816A (en) 1998-04-16 2000-07-04 Kabushiki Kaisha Toshiba Semiconductor memory device
US6141286A (en) * 1998-08-21 2000-10-31 Micron Technology, Inc. Embedded DRAM architecture with local data drivers and programmable number of data read and data write lines
US6442666B1 (en) * 1999-01-28 2002-08-27 Infineon Technologies Ag Techniques for improving memory access in a virtual memory system
KR100363079B1 (ko) * 1999-02-01 2002-11-30 삼성전자 주식회사 이웃한 메모리 뱅크들에 의해 입출력 센스앰프가 공유된 멀티 뱅크 메모리장치
US6118717A (en) * 1999-07-15 2000-09-12 Stmicroelectronics, Inc. Method and apparatus for loading directly onto bit lines in a dynamic random access memory
TW434538B (en) * 1999-07-28 2001-05-16 Sunplus Technology Co Ltd Cache data access memory structure
KR100339428B1 (ko) * 1999-09-07 2002-05-31 박종섭 불휘발성 강유전체 메모리의 셀 블록 구조
EP1181691B1 (de) 2000-03-13 2005-08-24 Infineon Technologies AG Schreib-leseverstärker für eine dram-speicherzelle sowie dram-speicher
US7215595B2 (en) * 2003-11-26 2007-05-08 Infineon Technologies Ag Memory device and method using a sense amplifier as a cache
US6990036B2 (en) 2003-12-30 2006-01-24 Intel Corporation Method and apparatus for multiple row caches per bank
US7050351B2 (en) * 2003-12-30 2006-05-23 Intel Corporation Method and apparatus for multiple row caches per bank
KR100533977B1 (ko) * 2004-05-06 2005-12-07 주식회사 하이닉스반도체 셀영역의 면적을 감소시킨 반도체 메모리 장치
KR101149816B1 (ko) * 2004-05-28 2012-05-25 삼성전자주식회사 캐쉬 메모리의 캐쉬 히트 로직
DE102004059723B4 (de) * 2004-12-11 2010-02-25 Qimonda Ag Speicherbauelement mit neuer Anordnung der Bitleitungen
KR100735527B1 (ko) * 2006-02-13 2007-07-04 삼성전자주식회사 2개의 패드 행을 포함하는 반도체 메모리 장치
JP2009009633A (ja) * 2007-06-27 2009-01-15 Elpida Memory Inc 半導体記憶装置
JP5743045B2 (ja) * 2008-07-16 2015-07-01 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体記憶装置及び半導体記憶装置におけるメモリアクセス方法
JP2011146094A (ja) * 2010-01-14 2011-07-28 Renesas Electronics Corp 半導体集積回路
US10276230B2 (en) 2016-08-31 2019-04-30 Micron Technology, Inc. Memory arrays
US10056386B2 (en) 2016-08-31 2018-08-21 Micron Technology, Inc. Memory cells and memory arrays
KR102208380B1 (ko) 2016-08-31 2021-01-28 마이크론 테크놀로지, 인크 메모리 셀들 및 메모리 어레이들
KR102223551B1 (ko) 2016-08-31 2021-03-08 마이크론 테크놀로지, 인크 메모리 셀 및 메모리 어레이
EP3507832B1 (en) 2016-08-31 2025-07-23 Micron Technology, Inc. Memory cells and memory arrays
US10115438B2 (en) 2016-08-31 2018-10-30 Micron Technology, Inc. Sense amplifier constructions
US10355002B2 (en) 2016-08-31 2019-07-16 Micron Technology, Inc. Memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
US11211384B2 (en) 2017-01-12 2021-12-28 Micron Technology, Inc. Memory cells, arrays of two transistor-one capacitor memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
CN110753962A (zh) * 2017-08-29 2020-02-04 美光科技公司 存储器电路
KR102792404B1 (ko) * 2021-08-17 2025-04-04 연세대학교 산학협력단 Ram 메모리에 기반한 pim 연산 장치 및 ram 메모리에 기반한 pim 연산 방법
GB2634496A (en) * 2023-10-04 2025-04-16 Ibm Banked sense amplifier circuit for a memory core and a memory core complex

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0814985B2 (ja) 1989-06-06 1996-02-14 富士通株式会社 半導体記憶装置
ATE101746T1 (de) * 1989-11-24 1994-03-15 Siemens Ag Halbleiterspeicher.
EP0454998B1 (en) * 1990-03-28 1995-11-08 Nec Corporation Semiconductor memory device
JPH05274879A (ja) * 1992-03-26 1993-10-22 Nec Corp 半導体装置
US5384745A (en) * 1992-04-27 1995-01-24 Mitsubishi Denki Kabushiki Kaisha Synchronous semiconductor memory device
KR970004460B1 (ko) 1992-06-30 1997-03-27 니뽄 덴끼 가부시끼가이샤 반도체 메모리 회로

Also Published As

Publication number Publication date
EP0704847B1 (en) 2001-05-30
US5586078A (en) 1996-12-17
DE69536100D1 (de) 2010-10-14
CN1142115A (zh) 1997-02-05
EP1081711A3 (en) 2008-04-09
CN1134016C (zh) 2004-01-07
DE69521095D1 (de) 2001-07-05
DE69521095T2 (de) 2001-10-25
JP3135795B2 (ja) 2001-02-19
KR0184091B1 (ko) 1999-04-15
EP1081711B1 (en) 2010-09-01
EP1081711A2 (en) 2001-03-07
EP0704847A1 (en) 1996-04-03
KR960012008A (ko) 1996-04-20
JPH0896571A (ja) 1996-04-12

Similar Documents

Publication Publication Date Title
TW303522B (enExample)
TW307869B (en) Semiconductor memory
US6862229B2 (en) Physically alternating sense amplifier activation
TW318933B (en) Semiconductor IC device having a memory and a logic circuit implemented with a single chip
JP3421441B2 (ja) ダイナミック型メモリ
US5051954A (en) Semiconductor memory device
JP2953708B2 (ja) ダイナミック型半導体記憶装置
JP3721035B2 (ja) カラム多重化を伴う連想記憶装置アーキテクチャ
TW419668B (en) Semiconductor memory having hierarchical bit line and/or word line architecture
JPS59229787A (ja) Ｍｏｓｆｅｔ集積回路チツプ
TW559830B (en) Data memory with a plurality of banks
RU2170955C2 (ru) Устройство полупроводниковой памяти для достижения высокой производительности и способ расположения в нем сигнальных шин
US6195282B1 (en) Wide database architecture
TW473804B (en) Semiconductor memory device
EP0499256A1 (en) Semiconductor memory device
DE102007019545B4 (de) Dateninversionsverfahren
TW386311B (en) Semiconductor memory device having independent isolation gates
US6023428A (en) Integrated circuit device having a memory array with segmented bit lines and method of operation
JPS60246090A (ja) 半導体記憶装置
TW522554B (en) Semiconductor memory
US7359252B2 (en) Memory data bus structure and method of transferring information with plural memory banks
US6091646A (en) Method and apparatus for coupling data from a memory device using a single ended read data path
JP2000156085A (ja) 半導体記憶装置
TW497254B (en) Semiconductor integrated circuit device
EP3622518B1 (en) Marching memory and computer system

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees