TW303481B - - Google Patents
Download PDFInfo
- Publication number
- TW303481B TW303481B TW085102423A TW85102423A TW303481B TW 303481 B TW303481 B TW 303481B TW 085102423 A TW085102423 A TW 085102423A TW 85102423 A TW85102423 A TW 85102423A TW 303481 B TW303481 B TW 303481B
- Authority
- TW
- Taiwan
- Prior art keywords
- cleaning
- washing
- patent application
- item
- project
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 claims description 71
- 238000005406 washing Methods 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 239000004094 surface-active agent Substances 0.000 claims description 29
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 23
- 239000012498 ultrapure water Substances 0.000 claims description 23
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 19
- 229910001868 water Inorganic materials 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 8
- DBJLJFTWODWSOF-UHFFFAOYSA-L nickel(ii) fluoride Chemical compound F[Ni]F DBJLJFTWODWSOF-UHFFFAOYSA-L 0.000 claims description 7
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 claims description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 4
- 239000002736 nonionic surfactant Substances 0.000 claims description 3
- 230000002079 cooperative effect Effects 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 description 32
- 230000000694 effects Effects 0.000 description 22
- 239000002245 particle Substances 0.000 description 18
- 239000003814 drug Substances 0.000 description 13
- 230000003746 surface roughness Effects 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 11
- 150000002739 metals Chemical class 0.000 description 10
- 229940079593 drug Drugs 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000005416 organic matter Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000003763 carbonization Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 150000002430 hydrocarbons Chemical class 0.000 description 6
- 239000004215 Carbon black (E152) Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000003682 fluorination reaction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- QTYLEXQVLJYJHT-UHFFFAOYSA-N 2-(2-fluorophenyl)-3-methylmorpholine Chemical compound CC1NCCOC1C1=CC=CC=C1F QTYLEXQVLJYJHT-UHFFFAOYSA-N 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000013383 initial experiment Methods 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4598295 | 1995-03-06 | ||
| JP10884095A JP3923097B2 (ja) | 1995-03-06 | 1995-05-02 | 洗浄装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW303481B true TW303481B (enExample) | 1997-04-21 |
Family
ID=26386084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085102423A TW303481B (enExample) | 1995-03-06 | 1996-02-29 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5944907A (enExample) |
| JP (1) | JP3923097B2 (enExample) |
| KR (1) | KR100422923B1 (enExample) |
| TW (1) | TW303481B (enExample) |
| WO (1) | WO1996027898A1 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4157185B2 (ja) * | 1997-02-26 | 2008-09-24 | 財団法人国際科学振興財団 | 洗浄液及び洗浄方法 |
| US20050215063A1 (en) * | 1997-05-09 | 2005-09-29 | Bergman Eric J | System and methods for etching a silicon wafer using HF and ozone |
| US6869487B1 (en) | 1997-05-09 | 2005-03-22 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
| US7416611B2 (en) * | 1997-05-09 | 2008-08-26 | Semitool, Inc. | Process and apparatus for treating a workpiece with gases |
| US7378355B2 (en) * | 1997-05-09 | 2008-05-27 | Semitool, Inc. | System and methods for polishing a wafer |
| US7404863B2 (en) * | 1997-05-09 | 2008-07-29 | Semitool, Inc. | Methods of thinning a silicon wafer using HF and ozone |
| US6240933B1 (en) * | 1997-05-09 | 2001-06-05 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
| US20050034745A1 (en) * | 1997-05-09 | 2005-02-17 | Semitool, Inc. | Processing a workpiece with ozone and a halogenated additive |
| US7163588B2 (en) * | 1997-05-09 | 2007-01-16 | Semitool, Inc. | Processing a workpiece using water, a base, and ozone |
| US6701941B1 (en) | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
| US7264680B2 (en) * | 1997-05-09 | 2007-09-04 | Semitool, Inc. | Process and apparatus for treating a workpiece using ozone |
| US20020157686A1 (en) * | 1997-05-09 | 2002-10-31 | Semitool, Inc. | Process and apparatus for treating a workpiece such as a semiconductor wafer |
| US6348157B1 (en) | 1997-06-13 | 2002-02-19 | Tadahiro Ohmi | Cleaning method |
| JP4001662B2 (ja) | 1997-06-27 | 2007-10-31 | 株式会社半導体エネルギー研究所 | シリコンの洗浄方法および多結晶シリコンの作製方法 |
| JP4135780B2 (ja) * | 1997-08-29 | 2008-08-20 | ユーシーティー株式会社 | 薬液定量注入装置および方法 |
| TW426874B (en) * | 1998-10-14 | 2001-03-21 | United Microelectronics Corp | Method for cleaning a semiconductor wafer |
| ATE485115T1 (de) * | 1999-07-23 | 2010-11-15 | Semitool Inc | Verfahren und system zum behandeln eines werkstückes wie eines halbleiterwafers |
| RU2209853C2 (ru) * | 1999-11-23 | 2003-08-10 | Федеральное государственное унитарное предприятие Конструкторское бюро транспортного машиностроения | Способ очистки металлических поверхностей оборудования и устройство для его осуществления |
| US6371134B2 (en) | 2000-01-31 | 2002-04-16 | Advanced Micro Devices, Inc. | Ozone cleaning of wafers |
| US6190062B1 (en) | 2000-04-26 | 2001-02-20 | Advanced Micro Devices, Inc. | Cleaning chamber built into SEM for plasma or gaseous phase cleaning |
| DE10036691A1 (de) * | 2000-07-27 | 2002-02-14 | Wacker Siltronic Halbleitermat | Verfahren zur chemischen Behandlung von Halbleiterscheiben |
| US6861007B2 (en) * | 2001-03-02 | 2005-03-01 | Micron Technology, Inc. | Method for removing organic material from a substrate and for oxidizing oxidizable material thereon |
| DE10239773B3 (de) * | 2002-08-29 | 2004-02-26 | Wacker Siltronic Ag | Halbleiterscheibe und Verfahren zur Reinigung einer Halbleiterscheibe |
| US6890452B2 (en) * | 2002-11-08 | 2005-05-10 | 3M Innovative Properties Company | Fluorinated surfactants for aqueous acid etch solutions |
| US7169323B2 (en) * | 2002-11-08 | 2007-01-30 | 3M Innovative Properties Company | Fluorinated surfactants for buffered acid etch solutions |
| CN1321755C (zh) * | 2003-01-21 | 2007-06-20 | 友达光电股份有限公司 | 清洗硅表面的方法以及用此方法制造薄膜晶体管的方法 |
| US20070068558A1 (en) * | 2005-09-06 | 2007-03-29 | Applied Materials, Inc. | Apparatus and methods for mask cleaning |
| WO2007034534A1 (ja) * | 2005-09-20 | 2007-03-29 | Tadahiro Ohmi | 半導体装置の製造方法及び半導体製造装置 |
| EP2495296B1 (en) * | 2005-10-05 | 2014-04-09 | Lion Corporation | Ozone treatment method |
| US10935896B2 (en) * | 2016-07-25 | 2021-03-02 | Applied Materials, Inc. | Cleaning solution mixing system with ultra-dilute cleaning solution and method of operation thereof |
| WO2024217816A1 (en) * | 2023-04-21 | 2024-10-24 | Asml Netherlands B.V. | Substrate processing |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02164707A (ja) * | 1988-12-19 | 1990-06-25 | Mitsui Toatsu Chem Inc | 三弗化窒素ガスの精製方法 |
| JP3217116B2 (ja) * | 1992-03-06 | 2001-10-09 | 日産化学工業株式会社 | 低表面張力洗浄用組成物 |
| JPH0641770A (ja) * | 1992-07-27 | 1994-02-15 | Daikin Ind Ltd | シリコンウエハ表面の処理方法 |
-
1995
- 1995-05-02 JP JP10884095A patent/JP3923097B2/ja not_active Expired - Fee Related
-
1996
- 1996-02-29 TW TW085102423A patent/TW303481B/zh active
- 1996-03-05 WO PCT/JP1996/000526 patent/WO1996027898A1/ja not_active Ceased
- 1996-03-05 KR KR1019970705927A patent/KR100422923B1/ko not_active Expired - Fee Related
- 1996-03-05 US US08/894,996 patent/US5944907A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| WO1996027898A1 (en) | 1996-09-12 |
| KR19980702525A (ko) | 1998-07-15 |
| JP3923097B2 (ja) | 2007-05-30 |
| KR100422923B1 (ko) | 2004-07-01 |
| JPH08306655A (ja) | 1996-11-22 |
| US5944907A (en) | 1999-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW303481B (enExample) | ||
| WO2021043167A1 (zh) | 一种碳化硅单晶抛光片衬底的最终清洗方法 | |
| TW576865B (en) | A composition and method for selectively etching a silicon nitride film | |
| TW473852B (en) | A single-operation method of cleaning semiconductors after final polishing | |
| TW419399B (en) | Post-lapping cleaning process for silicon wafers | |
| TW440945B (en) | Cleaning method for electronic material | |
| WO1996021242A1 (en) | Cleaning method | |
| EP0936268B1 (en) | Cleaning solution for electromaterials and method for using the same | |
| CN102825028B (zh) | 一种ycob晶体抛光表面的清洗方法 | |
| TW526552B (en) | Post-etching alkaline treatment process | |
| JP2841627B2 (ja) | 半導体ウェーハの洗浄方法 | |
| JP4367587B2 (ja) | 洗浄方法 | |
| TW417183B (en) | Alkaline water-based solution for cleaning metallized microelectronic workpieces and methods of using same | |
| TW436881B (en) | Cleaning liquid and cleaning method for component parts of semiconductor processing apparatus | |
| Kurokawa et al. | Cleaning by brush-scrubbing of chemical mechanical polished silicon surfaces using ozonized water and diluted HF | |
| JP4208056B2 (ja) | 洗浄方法 | |
| CN117832059A (zh) | 一种降低硅片表面颗粒数量的清洗方法 | |
| JP3575854B2 (ja) | シリコン単結晶ウエーハの洗浄方法および洗浄装置 | |
| JP4142655B2 (ja) | 洗浄方法 | |
| JPH0529307B2 (enExample) | ||
| JP2001054768A (ja) | 洗浄方法及び洗浄装置 | |
| JPH03208899A (ja) | シリコンウェハの洗浄方法 | |
| CN106862114A (zh) | 一种lbo晶体表面镀膜前的清洗方法 | |
| TWI569894B (zh) | Pollutant Treatment Method for Sprinkler with Silicon Carbide Coated | |
| TW399261B (en) | Solutions for cleaning silicon semiconductors or siliconoxides |