TW302538B - - Google Patents
Download PDFInfo
- Publication number
- TW302538B TW302538B TW85109520A TW85109520A TW302538B TW 302538 B TW302538 B TW 302538B TW 85109520 A TW85109520 A TW 85109520A TW 85109520 A TW85109520 A TW 85109520A TW 302538 B TW302538 B TW 302538B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- region
- concentration
- patent application
- diffusion layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 308
- 238000009792 diffusion process Methods 0.000 claims description 255
- 239000000758 substrate Substances 0.000 claims description 150
- 239000012535 impurity Substances 0.000 claims description 140
- 238000004519 manufacturing process Methods 0.000 claims description 90
- 238000005468 ion implantation Methods 0.000 claims description 66
- 239000013078 crystal Substances 0.000 claims description 42
- 230000006798 recombination Effects 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 27
- 230000005669 field effect Effects 0.000 claims description 22
- 238000005215 recombination Methods 0.000 claims description 15
- 230000007246 mechanism Effects 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 10
- 230000002079 cooperative effect Effects 0.000 claims description 9
- 238000002513 implantation Methods 0.000 claims description 9
- 230000000295 complement effect Effects 0.000 claims description 8
- 230000006870 function Effects 0.000 claims description 8
- 230000035515 penetration Effects 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 5
- 230000002265 prevention Effects 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims 1
- 238000009751 slip forming Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 89
- 238000007667 floating Methods 0.000 description 71
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 55
- 150000002500 ions Chemical class 0.000 description 39
- 229910052710 silicon Inorganic materials 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 239000010703 silicon Substances 0.000 description 26
- 230000007547 defect Effects 0.000 description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 25
- 229920005591 polysilicon Polymers 0.000 description 22
- 230000002829 reductive effect Effects 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 238000010586 diagram Methods 0.000 description 15
- 230000008030 elimination Effects 0.000 description 15
- 238000003379 elimination reaction Methods 0.000 description 15
- 230000003071 parasitic effect Effects 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- 239000000969 carrier Substances 0.000 description 13
- 238000009826 distribution Methods 0.000 description 13
- 238000012545 processing Methods 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 11
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 10
- 230000009467 reduction Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 238000004891 communication Methods 0.000 description 7
- 230000005496 eutectics Effects 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 208000024891 symptom Diseases 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- 230000007935 neutral effect Effects 0.000 description 6
- 230000036961 partial effect Effects 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 5
- 230000002411 adverse Effects 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910052800 carbon group element Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 235000009328 Amaranthus caudatus Nutrition 0.000 description 1
- 240000001592 Amaranthus caudatus Species 0.000 description 1
- 241000282994 Cervidae Species 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 235000012735 amaranth Nutrition 0.000 description 1
- 239000004178 amaranth Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000009223 counseling Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20065795 | 1995-08-07 | ||
| JP21041095 | 1995-08-18 | ||
| JP21041295 | 1995-08-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW302538B true TW302538B (ja) | 1997-04-11 |
Family
ID=27327846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW85109520A TW302538B (ja) | 1995-08-07 | 1996-08-06 |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TW302538B (ja) |
| WO (1) | WO1997006564A1 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6337500B1 (en) | 1997-06-19 | 2002-01-08 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| GB2358084B (en) * | 2000-01-07 | 2004-02-18 | Seiko Epson Corp | Semiconductor transistor |
| JP5100142B2 (ja) * | 2007-02-02 | 2012-12-19 | ラピスセミコンダクタ株式会社 | 半導体装置、半導体装置の製造方法及びその使用方法 |
| JP6323383B2 (ja) * | 2015-04-15 | 2018-05-16 | 信越半導体株式会社 | 半導体装置の評価方法 |
| JP6547702B2 (ja) * | 2016-07-26 | 2019-07-24 | 信越半導体株式会社 | 半導体装置の製造方法及び半導体装置の評価方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62271472A (ja) * | 1986-05-20 | 1987-11-25 | Toshiba Corp | 半導体装置 |
| JPS6489464A (en) * | 1987-09-30 | 1989-04-03 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPH04313242A (ja) * | 1991-04-10 | 1992-11-05 | Sony Corp | 薄膜半導体装置の製造方法 |
| JPH06291142A (ja) * | 1993-03-31 | 1994-10-18 | Sony Corp | Ｓｏｉ ｍｏｓ ｆｅｔ及びその製造方法 |
| JP3361922B2 (ja) * | 1994-09-13 | 2003-01-07 | 株式会社東芝 | 半導体装置 |
-
1996
- 1996-08-02 WO PCT/JP1996/002184 patent/WO1997006564A1/ja active Application Filing
- 1996-08-06 TW TW85109520A patent/TW302538B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO1997006564A1 (fr) | 1997-02-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7741188B2 (en) | Deep trench (DT) metal-insulator-metal (MIM) capacitor | |
| KR100289830B1 (ko) | 반도체장치및반도체디바이스형성방법 | |
| US7138685B2 (en) | Vertical MOSFET SRAM cell | |
| JPH1140811A (ja) | 半導体装置およびその製造方法 | |
| US8110464B2 (en) | SOI protection for buried plate implant and DT bottle ETCH | |
| EP0145606B1 (en) | Semiconductor memory device | |
| US20080157202A1 (en) | Soft error reduction of cmos circuits on substrates with hybrid crystal orientation using buried recombination centers | |
| JPH05259407A (ja) | 数メガビット級ダイナミック・ランダム・アクセス・メモリー製造のための積層コンデンサセルを含むマスク数減少・多結晶シリコン分割ｃｍｏｓ工程 | |
| KR20080076915A (ko) | 실리콘 및 실리콘 합금들에서 상보형 접합형 전계 효과트랜지스터 및 ｍｏｓ 트랜지스터를 이용하는 집적 회로 | |
| JP2012169640A (ja) | 半導体装置 | |
| JPS60130160A (ja) | 半導体記憶装置 | |
| JPH08213622A (ja) | 半導体装置およびその製造方法 | |
| JP5364108B2 (ja) | 半導体装置の製造方法 | |
| US4997785A (en) | Shared gate CMOS transistor | |
| KR19980034500A (ko) | 반도체 소자 및 그 제조방법 | |
| TW302538B (ja) | ||
| JP2005294849A (ja) | 高アスペクト比のセル境界を備えたｓｒａｍデバイス | |
| JPH09139434A (ja) | 半導体装置及びその製造方法 | |
| US20030132452A1 (en) | Semiconductor device and method of producing the same | |
| JP3980670B2 (ja) | 半導体装置 | |
| TW495963B (en) | Controllable conducting device and memory device | |
| US20090174008A1 (en) | METHOD AND STRUCTURE TO PROTECT FETs FROM PLASMA DAMAGE DURING FEOL PROCESSING | |
| JPS61177771A (ja) | 半導体装置の製造方法 | |
| JPH10189959A (ja) | 半導体装置 | |
| JP2006066928A (ja) | 半導体装置の製造方法 |