TW302508B - - Google Patents
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- Publication number
- TW302508B TW302508B TW084112784A TW84112784A TW302508B TW 302508 B TW302508 B TW 302508B TW 084112784 A TW084112784 A TW 084112784A TW 84112784 A TW84112784 A TW 84112784A TW 302508 B TW302508 B TW 302508B
- Authority
- TW
- Taiwan
- Prior art keywords
- plasma
- electrode
- etching
- power
- frequency
- Prior art date
Links
- 238000005530 etching Methods 0.000 claims description 118
- 238000012545 processing Methods 0.000 claims description 66
- 239000007789 gas Substances 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 55
- 238000001020 plasma etching Methods 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 25
- 238000011049 filling Methods 0.000 claims description 21
- 238000002156 mixing Methods 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 3
- 238000011068 loading method Methods 0.000 claims description 3
- 230000002079 cooperative effect Effects 0.000 claims description 2
- 230000006837 decompression Effects 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims description 2
- 238000005192 partition Methods 0.000 claims 2
- 238000010276 construction Methods 0.000 claims 1
- 230000010363 phase shift Effects 0.000 claims 1
- 239000002002 slurry Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 47
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 34
- 229920005591 polysilicon Polymers 0.000 description 34
- 229920002120 photoresistant polymer Polymers 0.000 description 20
- 239000000463 material Substances 0.000 description 17
- 238000002474 experimental method Methods 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 239000010408 film Substances 0.000 description 11
- 230000008859 change Effects 0.000 description 8
- 239000000523 sample Substances 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000001174 ascending effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06330240A JP3113786B2 (ja) | 1994-12-05 | 1994-12-05 | プラズマ処理装置及びその制御方法 |
| JP33023994A JP3150044B2 (ja) | 1994-12-05 | 1994-12-05 | プラズマ処理装置及びその制御方法 |
| JP33128394A JPH08162444A (ja) | 1994-12-08 | 1994-12-08 | プラズマ処理装置及びその制御方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW302508B true TW302508B (enExample) | 1997-04-11 |
Family
ID=27340401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084112784A TW302508B (enExample) | 1994-12-05 | 1995-11-30 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5716534A (enExample) |
| KR (1) | KR100193373B1 (enExample) |
| TW (1) | TW302508B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI422288B (zh) * | 2009-09-11 | 2014-01-01 | Univ Nat Formosa | High dissociation rate plasma generation method and application device thereof |
Families Citing this family (75)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998016950A1 (en) | 1996-10-11 | 1998-04-23 | Tokyo Electron Limited | Plasma etching method |
| KR100560049B1 (ko) * | 1997-05-10 | 2006-05-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 성막방법 |
| US5986874A (en) * | 1997-06-03 | 1999-11-16 | Watkins-Johnson Company | Electrostatic support assembly having an integral ion focus ring |
| DE69837043T2 (de) | 1997-08-22 | 2007-10-18 | Tokyo Electron Ltd. | Verfahren zur regelung einer plasmabehandlungsvorrichtung |
| US6537418B1 (en) * | 1997-09-19 | 2003-03-25 | Siemens Aktiengesellschaft | Spatially uniform gas supply and pump configuration for large wafer diameters |
| US6395128B2 (en) | 1998-02-19 | 2002-05-28 | Micron Technology, Inc. | RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition |
| US6112697A (en) * | 1998-02-19 | 2000-09-05 | Micron Technology, Inc. | RF powered plasma enhanced chemical vapor deposition reactor and methods |
| US5962345A (en) * | 1998-07-13 | 1999-10-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to reduce contact resistance by means of in-situ ICP |
| WO2000033369A1 (en) * | 1998-11-27 | 2000-06-08 | Tokyo Electron Limited | Plasma etching apparatus |
| US6849154B2 (en) * | 1998-11-27 | 2005-02-01 | Tokyo Electron Limited | Plasma etching apparatus |
| US6057245A (en) * | 1999-01-19 | 2000-05-02 | Vlsi Technology, Inc. | Gas phase planarization process for semiconductor wafers |
| US6383938B2 (en) | 1999-04-21 | 2002-05-07 | Alcatel | Method of anisotropic etching of substrates |
| JP2001035808A (ja) * | 1999-07-22 | 2001-02-09 | Semiconductor Energy Lab Co Ltd | 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法 |
| JP4578651B2 (ja) | 1999-09-13 | 2010-11-10 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置、プラズマエッチング方法 |
| TWI286338B (en) * | 2000-05-12 | 2007-09-01 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| US6562684B1 (en) | 2000-08-30 | 2003-05-13 | Micron Technology, Inc. | Methods of forming dielectric materials |
| US6875366B2 (en) * | 2000-09-12 | 2005-04-05 | Hitachi, Ltd. | Plasma processing apparatus and method with controlled biasing functions |
| JP4717295B2 (ja) * | 2000-10-04 | 2011-07-06 | 株式会社半導体エネルギー研究所 | ドライエッチング装置及びエッチング方法 |
| JP2002134472A (ja) * | 2000-10-20 | 2002-05-10 | Mitsubishi Electric Corp | エッチング方法、エッチング装置および半導体装置の製造方法 |
| JP2002198355A (ja) * | 2000-12-26 | 2002-07-12 | Tokyo Electron Ltd | プラズマ処理装置 |
| KR100842947B1 (ko) * | 2000-12-26 | 2008-07-01 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
| JP3665265B2 (ja) * | 2000-12-28 | 2005-06-29 | 株式会社日立製作所 | プラズマ処理装置 |
| US6805952B2 (en) * | 2000-12-29 | 2004-10-19 | Lam Research Corporation | Low contamination plasma chamber components and methods for making the same |
| US20020139477A1 (en) | 2001-03-30 | 2002-10-03 | Lam Research Corporation | Plasma processing method and apparatus with control of plasma excitation power |
| US6554954B2 (en) * | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
| US6761796B2 (en) | 2001-04-06 | 2004-07-13 | Axcelis Technologies, Inc. | Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing |
| JP2003045874A (ja) | 2001-07-27 | 2003-02-14 | Semiconductor Energy Lab Co Ltd | 金属配線およびその作製方法、並びに金属配線基板およびその作製方法 |
| US20050106868A1 (en) * | 2002-01-01 | 2005-05-19 | Asao Yamashita | Etching method |
| WO2003079427A1 (en) * | 2002-03-19 | 2003-09-25 | Tokyo Electron Limited | Plasma processing method |
| FR2842388B1 (fr) * | 2002-07-11 | 2004-09-24 | Cit Alcatel | Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance |
| KR100460143B1 (ko) * | 2002-08-02 | 2004-12-03 | 삼성전자주식회사 | 반도체 제조설비용 프로세스 챔버 |
| US20040040663A1 (en) * | 2002-08-29 | 2004-03-04 | Ryujiro Udo | Plasma processing apparatus |
| US6837966B2 (en) * | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
| JP4336124B2 (ja) | 2003-03-10 | 2009-09-30 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US7625460B2 (en) * | 2003-08-01 | 2009-12-01 | Micron Technology, Inc. | Multifrequency plasma reactor |
| US7405521B2 (en) * | 2003-08-22 | 2008-07-29 | Lam Research Corporation | Multiple frequency plasma processor method and apparatus |
| JP4359521B2 (ja) * | 2004-02-20 | 2009-11-04 | 東京エレクトロン株式会社 | プラズマ処理装置及びその制御方法 |
| JP4288229B2 (ja) * | 2004-12-24 | 2009-07-01 | パナソニック株式会社 | 半導体チップの製造方法 |
| US7692916B2 (en) * | 2005-03-31 | 2010-04-06 | Tokyo Electron Limited | Capacitive coupling plasma processing apparatus and method |
| US7851368B2 (en) * | 2005-06-28 | 2010-12-14 | Lam Research Corporation | Methods and apparatus for igniting a low pressure plasma |
| US7722778B2 (en) * | 2006-06-28 | 2010-05-25 | Lam Research Corporation | Methods and apparatus for sensing unconfinement in a plasma processing chamber |
| US20080053817A1 (en) * | 2006-09-04 | 2008-03-06 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| US8383001B2 (en) * | 2009-02-20 | 2013-02-26 | Tokyo Electron Limited | Plasma etching method, plasma etching apparatus and storage medium |
| US8562750B2 (en) * | 2009-12-17 | 2013-10-22 | Lam Research Corporation | Method and apparatus for processing bevel edge |
| US8801950B2 (en) * | 2011-03-07 | 2014-08-12 | Novellus Systems, Inc. | Reduction of a process volume of a processing chamber using a nested dynamic inert volume |
| US8895452B2 (en) | 2012-05-31 | 2014-11-25 | Lam Research Corporation | Substrate support providing gap height and planarization adjustment in plasma processing chamber |
| JP6556046B2 (ja) * | 2015-12-17 | 2019-08-07 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
| JP6643950B2 (ja) * | 2016-05-23 | 2020-02-12 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| CN118315254A (zh) | 2019-01-22 | 2024-07-09 | 应用材料公司 | 用于控制脉冲电压波形的反馈回路 |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| US20230298929A1 (en) * | 2020-07-31 | 2023-09-21 | Lam Research Corporation | Thin shadow ring for low-tilt trench etching |
| US11848176B2 (en) | 2020-07-31 | 2023-12-19 | Applied Materials, Inc. | Plasma processing using pulsed-voltage and radio-frequency power |
| CN111968905B (zh) * | 2020-08-03 | 2023-11-14 | 北京北方华创微电子装备有限公司 | 半导体设备的射频起辉控制方法及装置 |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| KR20230027251A (ko) * | 2020-11-19 | 2023-02-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 극단 에지 보호를 위한 링 |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US12394596B2 (en) | 2021-06-09 | 2025-08-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03203317A (ja) * | 1989-12-29 | 1991-09-05 | Matsushita Electric Ind Co Ltd | プラズマ処理装置 |
| US5314603A (en) * | 1991-07-24 | 1994-05-24 | Tokyo Electron Yamanashi Limited | Plasma processing apparatus capable of detecting and regulating actual RF power at electrode within chamber |
| US5542559A (en) * | 1993-02-16 | 1996-08-06 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus |
| US5456796A (en) * | 1993-06-02 | 1995-10-10 | Applied Materials, Inc. | Control of particle generation within a reaction chamber |
-
1995
- 1995-11-29 US US08/564,621 patent/US5716534A/en not_active Expired - Lifetime
- 1995-11-30 TW TW084112784A patent/TW302508B/zh not_active IP Right Cessation
- 1995-12-05 KR KR1019950046881A patent/KR100193373B1/ko not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI422288B (zh) * | 2009-09-11 | 2014-01-01 | Univ Nat Formosa | High dissociation rate plasma generation method and application device thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR960026333A (ko) | 1996-07-22 |
| US5716534A (en) | 1998-02-10 |
| KR100193373B1 (ko) | 1999-06-15 |
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