TW283236B - - Google Patents

Info

Publication number
TW283236B
TW283236B TW084114008A TW84114008A TW283236B TW 283236 B TW283236 B TW 283236B TW 084114008 A TW084114008 A TW 084114008A TW 84114008 A TW84114008 A TW 84114008A TW 283236 B TW283236 B TW 283236B
Authority
TW
Taiwan
Application number
TW084114008A
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of TW283236B publication Critical patent/TW283236B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3477—Circuits or methods to prevent overerasing of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/16—Flash programming of all the cells in an array, sector or block simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/18—Flash erasure of all the cells in an array, sector or block simultaneously
TW084114008A 1995-02-24 1995-12-28 TW283236B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/393,636 US5491657A (en) 1995-02-24 1995-02-24 Method for bulk (or byte) charging and discharging an array of flash EEPROM memory cells

Publications (1)

Publication Number Publication Date
TW283236B true TW283236B (zh) 1996-08-11

Family

ID=23555599

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084114008A TW283236B (zh) 1995-02-24 1995-12-28

Country Status (5)

Country Link
US (1) US5491657A (zh)
EP (1) EP0819308B1 (zh)
DE (1) DE69510237T2 (zh)
TW (1) TW283236B (zh)
WO (1) WO1996026522A1 (zh)

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US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
JP3273582B2 (ja) * 1994-05-13 2002-04-08 キヤノン株式会社 記憶装置
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JP2982670B2 (ja) * 1995-12-12 1999-11-29 日本電気株式会社 不揮発性半導体記憶装置および記憶方法
KR100217900B1 (ko) * 1996-04-01 1999-09-01 김영환 플래쉬 메모리 셀의 프로그램 방법
US6043123A (en) * 1996-05-30 2000-03-28 Hyundai Electronics America, Inc. Triple well flash memory fabrication process
US6330190B1 (en) 1996-05-30 2001-12-11 Hyundai Electronics America Semiconductor structure for flash memory enabling low operating potentials
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US5841701A (en) * 1997-01-21 1998-11-24 Advanced Micro Devices, Inc. Method of charging and discharging floating gage transistors to reduce leakage current
US5761126A (en) * 1997-02-07 1998-06-02 National Semiconductor Corporation Single-poly EPROM cell that utilizes a reduced programming voltage to program the cell
KR100323970B1 (ko) * 1997-02-12 2002-03-08 박세광 비휘발성메모리구조
US6781883B1 (en) * 1997-03-20 2004-08-24 Altera Corporation Apparatus and method for margin testing single polysilicon EEPROM cells
US6154820A (en) * 1997-07-01 2000-11-28 Advanced Micro Devices, Inc. Arrangement for storing program instructions and data in a memory device and method therefor
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JP3805867B2 (ja) * 1997-09-18 2006-08-09 株式会社東芝 不揮発性半導体記憶装置
US5920506A (en) * 1997-09-26 1999-07-06 Hyundai Electronics America, Inc. Method and apparatus for bulk preprogramming flash memory cells with minimal source and drain currents
US6026026A (en) 1997-12-05 2000-02-15 Hyundai Electronics America, Inc. Self-convergence of post-erase threshold voltages in a flash memory cell using transient response
US5956271A (en) * 1997-12-12 1999-09-21 Texas Instruments Incorporated Channel hot electron programmed memory device having improved reliability and operability
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US6137153A (en) * 1998-02-13 2000-10-24 Advanced Micro Devices, Inc. Floating gate capacitor for use in voltage regulators
KR100520191B1 (ko) * 1998-03-28 2005-11-28 주식회사 하이닉스반도체 플래쉬 메모리 장치 및 프로그램 방법
US6509606B1 (en) 1998-04-01 2003-01-21 National Semiconductor Corporation Single poly EPROM cell having smaller size and improved data retention compatible with advanced CMOS process
US6185133B1 (en) 1998-06-26 2001-02-06 Amic Technology, Inc. Flash EPROM using junction hot hole injection for erase
US6005810A (en) * 1998-08-10 1999-12-21 Integrated Silicon Solution, Inc. Byte-programmable flash memory having counters and secondary storage for disturb control during program and erase operations
US6049484A (en) * 1998-09-10 2000-04-11 Taiwan Semiconductor Manufacturing Company Erase method to improve flash EEPROM endurance by combining high voltage source erase and negative gate erase
US6011722A (en) * 1998-10-13 2000-01-04 Lucent Technologies Inc. Method for erasing and programming memory devices
US6404006B2 (en) 1998-12-01 2002-06-11 Vantis Corporation EEPROM cell with tunneling across entire separated channels
US6214666B1 (en) 1998-12-18 2001-04-10 Vantis Corporation Method of forming a non-volatile memory device
US6232631B1 (en) 1998-12-21 2001-05-15 Vantis Corporation Floating gate memory cell structure with programming mechanism outside the read path
US6294810B1 (en) 1998-12-22 2001-09-25 Vantis Corporation EEPROM cell with tunneling at separate edge and channel regions
US6064595A (en) * 1998-12-23 2000-05-16 Vantis Corporation Floating gate memory apparatus and method for selected programming thereof
US6157568A (en) * 1998-12-23 2000-12-05 Vantis Corporation Avalanche programmed floating gate memory cell structure with program element in first polysilicon layer
US6294809B1 (en) 1998-12-28 2001-09-25 Vantis Corporation Avalanche programmed floating gate memory cell structure with program element in polysilicon
US6215700B1 (en) 1999-01-07 2001-04-10 Vantis Corporation PMOS avalanche programmed floating gate memory cell structure
US6072725A (en) * 1999-01-26 2000-06-06 Advanced Micro Devices, Inc. Method of erasing floating gate capacitor used in voltage regulator
US6294811B1 (en) 1999-02-05 2001-09-25 Vantis Corporation Two transistor EEPROM cell
DE69923548D1 (de) 1999-06-22 2005-03-10 St Microelectronics Srl Flashkompatibler EEPROM Speicher
US6172909B1 (en) * 1999-08-09 2001-01-09 Advanced Micro Devices, Inc. Ramped gate technique for soft programming to tighten the Vt distribution
IT1308855B1 (it) * 1999-10-29 2002-01-11 St Microelectronics Srl Metodo di riprogrammazione controllata per celle di memoria nonvolatile,in particolare di tipo flash eeprom ed eprom.
US6272047B1 (en) 1999-12-17 2001-08-07 Micron Technology, Inc. Flash memory cell
US6518122B1 (en) * 1999-12-17 2003-02-11 Chartered Semiconductor Manufacturing Ltd. Low voltage programmable and erasable flash EEPROM
US6549466B1 (en) * 2000-02-24 2003-04-15 Advanced Micro Devices, Inc. Using a negative gate erase voltage applied in steps of decreasing amounts to reduce erase time for a non-volatile memory cell with an oxide-nitride-oxide (ONO) structure
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US6821852B2 (en) * 2001-02-13 2004-11-23 Micron Technology, Inc. Dual doped gates
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JP4114607B2 (ja) * 2001-09-25 2008-07-09 ソニー株式会社 不揮発性半導体メモリ装置及びその動作方法
US6418060B1 (en) * 2002-01-03 2002-07-09 Ememory Technology Inc. Method of programming and erasing non-volatile memory cells
JP2003203997A (ja) * 2002-01-07 2003-07-18 Mitsubishi Electric Corp 不揮発性半導体記憶装置及びその製造方法
US6614693B1 (en) 2002-03-19 2003-09-02 Taiwan Semiconductor Manufacturing Company Combination erase waveform to reduce oxide trapping centers generation rate of flash EEPROM
US6795348B2 (en) * 2002-05-29 2004-09-21 Micron Technology, Inc. Method and apparatus for erasing flash memory
US6798694B2 (en) * 2002-08-29 2004-09-28 Micron Technology, Inc. Method for reducing drain disturb in programming
KR20040107967A (ko) * 2003-06-16 2004-12-23 삼성전자주식회사 Ｓｏｎｏｓ메모리 소자 및 그 정보 소거방법
TWI222740B (en) * 2003-11-28 2004-10-21 United Microelectronics Corp Programming method of P-channel EEPROM
US7366025B2 (en) * 2004-06-10 2008-04-29 Saifun Semiconductors Ltd. Reduced power programming of non-volatile cells
KR100591773B1 (ko) * 2004-12-20 2006-06-26 삼성전자주식회사 불휘발성 반도체 메모리 장치 및 그것을 위한 전압 발생회로
US7450416B1 (en) * 2004-12-23 2008-11-11 Spansion Llc Utilization of memory-diode which may have each of a plurality of different memory states
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KR102396734B1 (ko) 2015-11-23 2022-05-12 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 동작 방법

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Also Published As

Publication number Publication date
EP0819308B1 (en) 1999-06-09
WO1996026522A1 (en) 1996-08-29
EP0819308A1 (en) 1998-01-21
DE69510237T2 (de) 2000-03-16
US5491657A (en) 1996-02-13
DE69510237D1 (de) 1999-07-15

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees