TW260806B - - Google Patents

Info

Publication number
TW260806B
TW260806B TW083110021A TW83110021A TW260806B TW 260806 B TW260806 B TW 260806B TW 083110021 A TW083110021 A TW 083110021A TW 83110021 A TW83110021 A TW 83110021A TW 260806 B TW260806 B TW 260806B
Authority
TW
Taiwan
Application number
TW083110021A
Other languages
Chinese (zh)
Original Assignee
Ushio Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18107959&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW260806(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Ushio Electric Inc filed Critical Ushio Electric Inc
Application granted granted Critical
Publication of TW260806B publication Critical patent/TW260806B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0075—Cleaning of glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
TW083110021A 1993-11-26 1994-10-29 TW260806B (US06265458-20010724-C00045.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31923893 1993-11-26

Publications (1)

Publication Number Publication Date
TW260806B true TW260806B (US06265458-20010724-C00045.png) 1995-10-21

Family

ID=18107959

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083110021A TW260806B (US06265458-20010724-C00045.png) 1993-11-26 1994-10-29

Country Status (5)

Country Link
US (1) US5510158A (US06265458-20010724-C00045.png)
EP (1) EP0661110B1 (US06265458-20010724-C00045.png)
KR (1) KR100189794B1 (US06265458-20010724-C00045.png)
DE (2) DE69406103T4 (US06265458-20010724-C00045.png)
TW (1) TW260806B (US06265458-20010724-C00045.png)

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US5763892A (en) * 1995-06-19 1998-06-09 Dainippon Screen Manufacturing Company, Ltd. Ultraviolet irradiator for substrate, substrate treatment system, and method of irradiating substrate with ultraviolet light
JP3113797B2 (ja) * 1995-08-28 2000-12-04 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 感光性化学物質膜の改質方法
US5966595A (en) * 1995-10-05 1999-10-12 Micron Technology, Inc. Method to form a DRAM capacitor using low temperature reoxidation
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SE9600524D0 (sv) * 1996-02-14 1996-02-14 Abb Research Ltd A method and a device for oxidation of a semiconductor layer of SiC
AU713054B2 (en) * 1996-03-27 1999-11-25 Ethicon Inc. Process for blackening surgical needles
US5941448A (en) * 1996-06-07 1999-08-24 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method for dry fluxing of metallic surfaces, before soldering or tinning, using an atmosphere which includes water vapor
US5693928A (en) * 1996-06-27 1997-12-02 International Business Machines Corporation Method for producing a diffusion barrier and polymeric article having a diffusion barrier
US6143081A (en) * 1996-07-12 2000-11-07 Tokyo Electron Limited Film forming apparatus and method, and film modifying apparatus and method
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US5990006A (en) * 1997-02-10 1999-11-23 Micron Technology, Inc. Method for forming materials
US5863327A (en) * 1997-02-10 1999-01-26 Micron Technology, Inc. Apparatus for forming materials
JP3500050B2 (ja) * 1997-09-08 2004-02-23 東京エレクトロン株式会社 不純物除去装置、膜形成方法及び膜形成システム
US20020098109A1 (en) * 1997-09-17 2002-07-25 Jerry Nelson Method and apparatus for producing purified or ozone enriched air to remove contaminants from fluids
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JP3683461B2 (ja) 2000-02-16 2005-08-17 Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 キセノンエキシマランプの光強度測定装置
JP3385259B2 (ja) * 2000-03-15 2003-03-10 株式会社エム・ディ・コム 誘電体バリヤ放電ランプ及びそれを利用したドライ洗浄装置
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JP2002075980A (ja) * 2000-08-30 2002-03-15 Miyazaki Oki Electric Co Ltd 真空紫外光ｃｖｄによる低誘電体膜の製造方法
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JP2002239484A (ja) * 2001-02-16 2002-08-27 Ushio Inc 誘電体バリア放電ランプを使った基板処理装置
JP2002294456A (ja) * 2001-03-30 2002-10-09 Oki Electric Ind Co Ltd 膜の形成方法及びその方法を実施するためのｃｖｄ装置
US6573199B2 (en) 2001-08-30 2003-06-03 Micron Technology, Inc. Methods of treating dielectric materials with oxygen, and methods of forming capacitor constructions
US20030104171A1 (en) * 2001-11-29 2003-06-05 Maclachlan Julia Method of using short wavelength UV light to selectively remove a coating from a substrate and article produced thereby
FR2835205B1 (fr) * 2002-01-25 2007-02-16 Saint Gobain Traitement de pollution organique sur un substrat inorganique
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US7015568B2 (en) 2003-08-21 2006-03-21 Texas Instruments Incorporated System for ultraviolet atmospheric seed layer remediation
JP4038557B2 (ja) * 2002-04-16 2008-01-30 リアライズ・アドバンストテクノロジ株式会社 レジスト除去装置及びレジスト除去方法
US6664737B1 (en) 2002-06-21 2003-12-16 Axcelis Technologies, Inc. Dielectric barrier discharge apparatus and process for treating a substrate
US20040108059A1 (en) * 2002-09-20 2004-06-10 Thomas Johnston System and method for removal of materials from an article
TWI287253B (en) * 2002-09-30 2007-09-21 Adv Lcd Tech Dev Ct Co Ltd Substrate processing apparatus and substrate processing method
US6814931B2 (en) * 2002-12-20 2004-11-09 Steris Inc. Method and apparatus for treating an object with ozone
US7268355B2 (en) 2002-12-27 2007-09-11 Franek Olstowski Excimer UV fluorescence detection
US20040171279A1 (en) * 2003-02-27 2004-09-02 Sharp Laboratories Of America Inc. Method of low-temperature oxidation of silicon using nitrous oxide
KR100935401B1 (ko) * 2003-03-06 2010-01-06 엘지디스플레이 주식회사 자외선을 이용하는 기판세정장치 및 이의 구동방법
JP3776092B2 (ja) * 2003-03-25 2006-05-17 株式会社ルネサステクノロジ エッチング装置、エッチング方法および半導体装置の製造方法
US6939397B2 (en) * 2003-05-08 2005-09-06 Eco-Rx, Inc. System for purifying and removing contaminants from gaseous fluids
US7737382B2 (en) * 2004-04-01 2010-06-15 Lincoln Global, Inc. Device for processing welding wire
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US20060196525A1 (en) * 2005-03-03 2006-09-07 Vrtis Raymond N Method for removing a residue from a chamber
TW200921297A (en) * 2007-09-25 2009-05-16 Renesas Tech Corp Method and apparatus for manufacturing semiconductor device, and resist material
US20110056513A1 (en) * 2008-06-05 2011-03-10 Axel Hombach Method for treating surfaces, lamp for said method, and irradiation system having said lamp
CN102476110A (zh) * 2010-11-30 2012-05-30 中国科学院大连化学物理研究所 一种紫外灯灯头透镜外表面清洗装置
JP5348156B2 (ja) * 2011-03-01 2013-11-20 ウシオ電機株式会社 光照射装置
CN103406302B (zh) * 2013-08-23 2015-08-12 深圳市华星光电技术有限公司 基于紫外线的清洗方法及清洗装置
JP6764665B2 (ja) 2016-03-17 2020-10-07 東京応化工業株式会社 表面処理方法、帯電防止剤及び親水化処理剤
CN106975329B (zh) * 2017-04-13 2019-11-15 上海大学 真空等离子体叠式管状空气净化装置
KR20210124443A (ko) * 2019-02-12 2021-10-14 어플라이드 머티어리얼스, 인코포레이티드 진공 시스템을 세정하기 위한 방법, 기판의 진공 프로세싱을 위한 방법, 및 기판을 진공 프로세싱하기 위한 장치
EP3768048B1 (en) * 2019-07-19 2023-06-07 Université Libre de Bruxelles Dielectric barrier discharge plasma reactor and method for plasma-enhanced vapor deposition
TWI756761B (zh) * 2020-04-06 2022-03-01 香港商正揚科技有限公司 紫外光固化裝置
CN115997482B (zh) * 2020-06-30 2024-09-17 佳能株式会社 活性氧供给装置、利用活性氧的处理装置和利用活性氧的处理方法

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Also Published As

Publication number Publication date
DE69406103D1 (de) 1997-11-13
KR950014015A (ko) 1995-06-15
US5510158A (en) 1996-04-23
KR100189794B1 (ko) 1999-06-01
EP0661110B1 (en) 1997-10-08
EP0661110A1 (en) 1995-07-05
DE69406103T2 (de) 1998-05-20
DE69406103T4 (de) 2000-07-27

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