TW234202B - - Google Patents

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Publication number
TW234202B
TW234202B TW081100317A TW81100317A TW234202B TW 234202 B TW234202 B TW 234202B TW 081100317 A TW081100317 A TW 081100317A TW 81100317 A TW81100317 A TW 81100317A TW 234202 B TW234202 B TW 234202B
Authority
TW
Taiwan
Prior art keywords
layer
window
dielectric layer
amorphous silicon
depositing
Prior art date
Application number
TW081100317A
Other languages
English (en)
Chinese (zh)
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Application granted granted Critical
Publication of TW234202B publication Critical patent/TW234202B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H10W20/491—
    • H10W20/065—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/055—Fuse

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW081100317A 1991-02-27 1992-01-17 TW234202B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/661,736 US5100827A (en) 1991-02-27 1991-02-27 Buried antifuse

Publications (1)

Publication Number Publication Date
TW234202B true TW234202B (enExample) 1994-11-11

Family

ID=24654892

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081100317A TW234202B (enExample) 1991-02-27 1992-01-17

Country Status (5)

Country Link
US (1) US5100827A (enExample)
EP (1) EP0501687A3 (enExample)
JP (1) JP2642559B2 (enExample)
KR (1) KR100234444B1 (enExample)
TW (1) TW234202B (enExample)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
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US5381035A (en) * 1992-09-23 1995-01-10 Chen; Wenn-Jei Metal-to-metal antifuse including etch stop layer
US5404029A (en) * 1990-04-12 1995-04-04 Actel Corporation Electrically programmable antifuse element
US5552627A (en) * 1990-04-12 1996-09-03 Actel Corporation Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers
US5541441A (en) * 1994-10-06 1996-07-30 Actel Corporation Metal to metal antifuse
US5614756A (en) * 1990-04-12 1997-03-25 Actel Corporation Metal-to-metal antifuse with conductive
US5543656A (en) * 1990-04-12 1996-08-06 Actel Corporation Metal to metal antifuse
US5272101A (en) * 1990-04-12 1993-12-21 Actel Corporation Electrically programmable antifuse and fabrication processes
US5780323A (en) * 1990-04-12 1998-07-14 Actel Corporation Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug
US6171512B1 (en) 1991-02-15 2001-01-09 Canon Kabushiki Kaisha Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
EP0509631A1 (en) * 1991-04-18 1992-10-21 Actel Corporation Antifuses having minimum areas
US5331197A (en) * 1991-04-23 1994-07-19 Canon Kabushiki Kaisha Semiconductor memory device including gate electrode sandwiching a channel region
US5196724A (en) * 1991-04-26 1993-03-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5557136A (en) * 1991-04-26 1996-09-17 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
US5701027A (en) * 1991-04-26 1997-12-23 Quicklogic Corporation Programmable interconnect structures and programmable integrated circuits
WO1993004499A1 (en) * 1991-08-19 1993-03-04 Crosspoint Solutions, Inc. An improved antifuse and method of manufacture thereof
EP0558176A1 (en) * 1992-02-26 1993-09-01 Actel Corporation Metal-to-metal antifuse with improved diffusion barrier layer
US5250464A (en) * 1992-03-11 1993-10-05 Texas Instruments Incorporated Method of making a low capacitance, low resistance sidewall antifuse structure
EP0564138A1 (en) * 1992-03-31 1993-10-06 STMicroelectronics, Inc. Field programmable device
EP0583119B1 (en) * 1992-07-31 2000-02-09 STMicroelectronics, Inc. Programmable contact structure
US5282158A (en) * 1992-08-21 1994-01-25 Micron Technology, Inc. Transistor antifuse for a programmable ROM
EP0592078A1 (en) * 1992-09-23 1994-04-13 Actel Corporation Antifuse element and fabrication method
US5308795A (en) * 1992-11-04 1994-05-03 Actel Corporation Above via metal-to-metal antifuse
TW232091B (enExample) * 1992-12-17 1994-10-11 American Telephone & Telegraph
US5373169A (en) * 1992-12-17 1994-12-13 Actel Corporation Low-temperature process metal-to-metal antifuse employing silicon link
US5550404A (en) * 1993-05-20 1996-08-27 Actel Corporation Electrically programmable antifuse having stair aperture
US5300456A (en) * 1993-06-17 1994-04-05 Texas Instruments Incorporated Metal-to-metal antifuse structure
US5350710A (en) * 1993-06-24 1994-09-27 United Microelectronics Corporation Device for preventing antenna effect on circuit
JP3256603B2 (ja) * 1993-07-05 2002-02-12 株式会社東芝 半導体装置及びその製造方法
US5581111A (en) * 1993-07-07 1996-12-03 Actel Corporation Dielectric-polysilicon-dielectric antifuse for field programmable logic applications
US5369054A (en) * 1993-07-07 1994-11-29 Actel Corporation Circuits for ESD protection of metal-to-metal antifuses during processing
US5498895A (en) * 1993-07-07 1996-03-12 Actel Corporation Process ESD protection devices for use with antifuses
US5449947A (en) * 1993-07-07 1995-09-12 Actel Corporation Read-disturb tolerant metal-to-metal antifuse and fabrication method
US5856234A (en) * 1993-09-14 1999-01-05 Actel Corporation Method of fabricating an antifuse
US5485031A (en) * 1993-11-22 1996-01-16 Actel Corporation Antifuse structure suitable for VLSI application
US5420926A (en) * 1994-01-05 1995-05-30 At&T Corp. Anonymous credit card transactions
US5403778A (en) * 1994-01-06 1995-04-04 Texas Instruments Incorporated Limited metal reaction for contact cleaning and improved metal-to-metal antifuse contact cleaning method
US5412593A (en) * 1994-01-12 1995-05-02 Texas Instruments Incorporated Fuse and antifuse reprogrammable link for integrated circuits
US5440167A (en) * 1994-02-23 1995-08-08 Crosspoint Solutions, Inc. Antifuse with double via contact and method of manufacture therefor
US5682058A (en) * 1994-03-31 1997-10-28 Crosspoint Solutions, Inc. Multilayer antifuse with low leakage and method of manufacture therefor
JP3501416B2 (ja) * 1994-04-28 2004-03-02 忠弘 大見 半導体装置
US5587613A (en) * 1994-05-25 1996-12-24 Crosspoint Solutions, Inc. Low-capacitance, isotropically etched antifuse and method of manufacture therefor
US5521440A (en) * 1994-05-25 1996-05-28 Crosspoint Solutions, Inc. Low-capacitance, plugged antifuse and method of manufacture therefor
US5633189A (en) * 1994-08-01 1997-05-27 Actel Corporation Method of making metal to metal antifuse
US6159836A (en) * 1994-09-16 2000-12-12 Stmicroelectronics, Inc. Method for forming programmable contact structure
US5756367A (en) * 1994-11-07 1998-05-26 Advanced Micro Devices, Inc. Method of making a spacer based antifuse structure for low capacitance and high reliability
US5663591A (en) * 1995-02-14 1997-09-02 Crosspoint Solutions, Inc. Antifuse with double via, spacer-defined contact
US5592016A (en) * 1995-04-14 1997-01-07 Actel Corporation Antifuse with improved antifuse material
US5789764A (en) * 1995-04-14 1998-08-04 Actel Corporation Antifuse with improved antifuse material
WO1996038861A1 (en) * 1995-06-02 1996-12-05 Actel Corporation Raised tungsten plug antifuse and fabrication process
US5986322A (en) * 1995-06-06 1999-11-16 Mccollum; John L. Reduced leakage antifuse structure
US5741720A (en) * 1995-10-04 1998-04-21 Actel Corporation Method of programming an improved metal-to-metal via-type antifuse
US5693556A (en) * 1995-12-29 1997-12-02 Cypress Semiconductor Corp. Method of making an antifuse metal post structure
US5783467A (en) * 1995-12-29 1998-07-21 Vlsi Technology, Inc. Method of making antifuse structures using implantation of both neutral and dopant species
US5831325A (en) * 1996-08-16 1998-11-03 Zhang; Guobiao Antifuse structures with improved manufacturability
US6541363B2 (en) * 1996-10-17 2003-04-01 Guobiao Zhang Antifuse manufacturing process
US8049299B2 (en) * 2009-02-25 2011-11-01 Freescale Semiconductor, Inc. Antifuses with curved breakdown regions

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US3675090A (en) * 1968-11-04 1972-07-04 Energy Conversion Devices Inc Film deposited semiconductor devices
US4203123A (en) * 1977-12-12 1980-05-13 Burroughs Corporation Thin film memory device employing amorphous semiconductor materials
IL61678A (en) * 1979-12-13 1984-04-30 Energy Conversion Devices Inc Programmable cell and programmable electronic arrays comprising such cells
EP0041770A3 (en) * 1980-05-23 1984-07-11 Texas Instruments Incorporated A programmable read-only-memory element and method of fabrication thereof
US4442507A (en) * 1981-02-23 1984-04-10 Burroughs Corporation Electrically programmable read-only memory stacked above a semiconductor substrate
JPH0616536B2 (ja) * 1982-09-30 1994-03-02 富士通株式会社 ヒューズｒｏｍを有する半導体装置及びヒューズｒｏｍの導通方法
JPS59105354A (ja) * 1982-12-09 1984-06-18 Toshiba Corp 半導体装置
US4569120A (en) * 1983-03-07 1986-02-11 Signetics Corporation Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation
US4748490A (en) * 1985-08-01 1988-05-31 Texas Instruments Incorporated Deep polysilicon emitter antifuse memory cell
JPH01206631A (ja) * 1988-02-15 1989-08-18 Toshiba Corp 半導体装置の製造方法
JPH01241175A (ja) * 1988-03-23 1989-09-26 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタの製造方法
JPH02153552A (ja) * 1988-08-23 1990-06-13 Seiko Epson Corp 半導体素子及びその製造方法
US4914055A (en) * 1989-08-24 1990-04-03 Advanced Micro Devices, Inc. Semiconductor antifuse structure and method
JPH03209867A (ja) * 1990-01-12 1991-09-12 Seiko Epson Corp 非熔断半導体記憶装置

Also Published As

Publication number Publication date
KR100234444B1 (ko) 1999-12-15
JPH06169017A (ja) 1994-06-14
US5100827A (en) 1992-03-31
EP0501687A3 (en) 1993-01-07
KR920017258A (ko) 1992-09-26
JP2642559B2 (ja) 1997-08-20
EP0501687A2 (en) 1992-09-02

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