TW232091B - - Google Patents

Download PDF

Info

Publication number
TW232091B
TW232091B TW082110024A TW82110024A TW232091B TW 232091 B TW232091 B TW 232091B TW 082110024 A TW082110024 A TW 082110024A TW 82110024 A TW82110024 A TW 82110024A TW 232091 B TW232091 B TW 232091B
Authority
TW
Taiwan
Prior art keywords
layer
amorphous silicon
fan
application
barrier material
Prior art date
Application number
TW082110024A
Other languages
English (en)
Chinese (zh)
Original Assignee
American Telephone & Telegraph
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone & Telegraph filed Critical American Telephone & Telegraph
Application granted granted Critical
Publication of TW232091B publication Critical patent/TW232091B/zh

Links

Classifications

    • H10W20/491

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW082110024A 1992-12-17 1993-11-27 TW232091B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US99179092A 1992-12-17 1992-12-17

Publications (1)

Publication Number Publication Date
TW232091B true TW232091B (enExample) 1994-10-11

Family

ID=25537569

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082110024A TW232091B (enExample) 1992-12-17 1993-11-27

Country Status (4)

Country Link
US (1) US5412245A (enExample)
EP (1) EP0602836A1 (enExample)
JP (1) JPH06216254A (enExample)
TW (1) TW232091B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552627A (en) * 1990-04-12 1996-09-03 Actel Corporation Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers
US5780323A (en) 1990-04-12 1998-07-14 Actel Corporation Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug
US5272101A (en) * 1990-04-12 1993-12-21 Actel Corporation Electrically programmable antifuse and fabrication processes
US5614756A (en) 1990-04-12 1997-03-25 Actel Corporation Metal-to-metal antifuse with conductive
EP0558176A1 (en) * 1992-02-26 1993-09-01 Actel Corporation Metal-to-metal antifuse with improved diffusion barrier layer
US5308795A (en) * 1992-11-04 1994-05-03 Actel Corporation Above via metal-to-metal antifuse
US6690044B1 (en) * 1993-03-19 2004-02-10 Micron Technology, Inc. Approach to avoid buckling BPSG by using an intermediate barrier layer
JP3170101B2 (ja) * 1993-04-15 2001-05-28 株式会社東芝 半導体装置及びその製造方法
US5581111A (en) * 1993-07-07 1996-12-03 Actel Corporation Dielectric-polysilicon-dielectric antifuse for field programmable logic applications
US5369054A (en) * 1993-07-07 1994-11-29 Actel Corporation Circuits for ESD protection of metal-to-metal antifuses during processing
US5485031A (en) 1993-11-22 1996-01-16 Actel Corporation Antifuse structure suitable for VLSI application
US5789764A (en) * 1995-04-14 1998-08-04 Actel Corporation Antifuse with improved antifuse material
WO1996038861A1 (en) 1995-06-02 1996-12-05 Actel Corporation Raised tungsten plug antifuse and fabrication process
US5986322A (en) * 1995-06-06 1999-11-16 Mccollum; John L. Reduced leakage antifuse structure
US5741720A (en) * 1995-10-04 1998-04-21 Actel Corporation Method of programming an improved metal-to-metal via-type antifuse
US5602053A (en) * 1996-04-08 1997-02-11 Chartered Semidconductor Manufacturing Pte, Ltd. Method of making a dual damascene antifuse structure
KR101416876B1 (ko) 2006-11-17 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조방법
US10714422B2 (en) 2018-10-16 2020-07-14 Globalfoundries Inc. Anti-fuse with self aligned via patterning
US10892222B1 (en) 2019-09-04 2021-01-12 Globalfoundries Inc. Anti-fuse for an integrated circuit (IC) product and method of making such an anti-fuse for an IC product
US10957701B1 (en) 2019-11-11 2021-03-23 Globalfoundries U.S. Inc. Fin-based anti-fuse device for integrated circuit (IC) products, methods of making such an anti-fuse device and IC products comprising such an anti-fuse device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS543480A (en) * 1977-06-09 1979-01-11 Fujitsu Ltd Manufacture of semiconductor device
JPS5720463A (en) * 1980-07-14 1982-02-02 Toshiba Corp Semiconductor memory device
JPH0656876B2 (ja) * 1984-12-28 1994-07-27 富士通株式会社 半導体装置
US4949084A (en) * 1985-10-29 1990-08-14 Ohio Associated Enterprises, Inc. Programmable integrated crosspoint switch
US4943538A (en) * 1986-05-09 1990-07-24 Actel Corporation Programmable low impedance anti-fuse element
US5134457A (en) * 1986-05-09 1992-07-28 Actel Corporation Programmable low-impedance anti-fuse element
JPH01184942A (ja) * 1988-01-20 1989-07-24 Toshiba Corp トリミング素子とその電気短絡方法
US5404029A (en) * 1990-04-12 1995-04-04 Actel Corporation Electrically programmable antifuse element
US5100827A (en) * 1991-02-27 1992-03-31 At&T Bell Laboratories Buried antifuse
US5126290A (en) * 1991-09-11 1992-06-30 Micron Technology, Inc. Method of making memory devices utilizing one-sided ozone teos spacers

Also Published As

Publication number Publication date
US5412245A (en) 1995-05-02
EP0602836A1 (en) 1994-06-22
JPH06216254A (ja) 1994-08-05

Similar Documents

Publication Publication Date Title
TW232091B (enExample)
TW228036B (enExample)
JP2642559B2 (ja) 埋込みアンチヒューズを有する集積回路の製造法
JPH06509444A (ja) アンチヒューズ構造体およびその製造方法
JP4047657B2 (ja) ヒューズ/アンチヒューズを用いたワンタイムプログラマブルメモリ
US6567301B2 (en) One-time programmable unit memory cell based on vertically oriented fuse and diode and one-time programmable memory using the same
US5427979A (en) Method for making multi-level antifuse structure
US5120679A (en) Anti-fuse structures and methods for making same
US5614756A (en) Metal-to-metal antifuse with conductive
JP3268800B2 (ja) 電気的プログラマブルアンチヒューズ素子及び該素子の形成方法並びに半導体デバイス
JP4263816B2 (ja) 半導体デバイスとその製造方法
US5780323A (en) Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug
KR101151302B1 (ko) 집적 회로 장치의 퓨즈 구조
JPS62281365A (ja) プログラマブル低インピーダンス・アンチ・ヒューズ素子
KR20030023556A (ko) 메모리 셀
US5844297A (en) Antifuse device for use on a field programmable interconnect chip
US5387311A (en) Method for manufacturing anti-fuse structures
USRE46970E1 (en) Diode-less array for one-time programmable memory
WO2000019537A1 (en) Three dimensional rom
US5789796A (en) Programmable anti-fuse device and method for manufacturing the same
US20040056325A1 (en) Optically and electrically programmable silicided polysilicon fuse device
TW445624B (en) Slotted contacts for minimizing the voltage required to electrically blow fuses
JP2952581B2 (ja) アンチヒューズの形成方法
JPS60100464A (ja) 半導体装置