TW202411187A - 多酚化合物、微影用膜形成用組成物、微影用下層膜及圖型形成方法 - Google Patents
多酚化合物、微影用膜形成用組成物、微影用下層膜及圖型形成方法 Download PDFInfo
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- DHRLEVQXOMLTIM-UHFFFAOYSA-N phosphoric acid;trioxomolybdenum Chemical compound O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.OP(O)(O)=O DHRLEVQXOMLTIM-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 150000003139 primary aliphatic amines Chemical class 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 125000001501 propionyl group Chemical group O=C([*])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000005619 secondary aliphatic amines Chemical class 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000011973 solid acid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- RKSOPLXZQNSWAS-UHFFFAOYSA-N tert-butyl bromide Chemical compound CC(C)(C)Br RKSOPLXZQNSWAS-UHFFFAOYSA-N 0.000 description 1
- ILMRJRBKQSSXGY-UHFFFAOYSA-N tert-butyl(dimethyl)silicon Chemical group C[Si](C)C(C)(C)C ILMRJRBKQSSXGY-UHFFFAOYSA-N 0.000 description 1
- 150000003510 tertiary aliphatic amines Chemical class 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 125000005425 toluyl group Chemical group 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 125000000025 triisopropylsilyl group Chemical group C(C)(C)[Si](C(C)C)(C(C)C)* 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C39/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
- C07C39/12—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings
- C07C39/15—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings with all hydroxy groups on non-condensed rings, e.g. phenylphenol
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
- C07C69/02—Esters of acyclic saturated monocarboxylic acids having the carboxyl group bound to an acyclic carbon atom or to hydrogen
- C07C69/12—Acetic acid esters
- C07C69/21—Acetic acid esters of hydroxy compounds with more than three hydroxy groups
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-107127 | 2022-07-01 | ||
| JP2022107127 | 2022-07-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202411187A true TW202411187A (zh) | 2024-03-16 |
Family
ID=89382543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112124633A TW202411187A (zh) | 2022-07-01 | 2023-06-30 | 多酚化合物、微影用膜形成用組成物、微影用下層膜及圖型形成方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2024005194A1 (https=) |
| TW (1) | TW202411187A (https=) |
| WO (1) | WO2024005194A1 (https=) |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03201467A (ja) * | 1989-12-28 | 1991-09-03 | Nitto Denko Corp | 半導体装置 |
| JP2566169B2 (ja) * | 1989-12-28 | 1996-12-25 | 日本ゼオン株式会社 | ポジ型レジスト組成物 |
| JP2626363B2 (ja) * | 1991-11-05 | 1997-07-02 | 東レ株式会社 | 電子線感応組成物およびそれを用いるパターン形成方法 |
| JPH08277235A (ja) * | 1995-04-05 | 1996-10-22 | Honshu Chem Ind Co Ltd | 新規なポリフェノール化合物及びその製造方法 |
| JP4139575B2 (ja) * | 2001-04-13 | 2008-08-27 | 富士フイルム株式会社 | シリコン含有２層レジスト用下層レジスト組成物 |
| JP2004099570A (ja) * | 2002-09-12 | 2004-04-02 | Honshu Chem Ind Co Ltd | テトラヒドロピラニル化多核フェノール類 |
| KR20060027158A (ko) * | 2004-09-22 | 2006-03-27 | 주식회사 동진쎄미켐 | 유기 반사방지막 형성용 조성물 및 이를 이용한 반도체소자 패턴의 형성방법 |
| JP4662063B2 (ja) * | 2006-05-25 | 2011-03-30 | 信越化学工業株式会社 | フォトレジスト下層膜形成材料及びパターン形成方法 |
| JP4823959B2 (ja) * | 2006-08-10 | 2011-11-24 | 信越化学工業株式会社 | レジスト下層膜材料及びパターン形成方法 |
| JP5067537B2 (ja) * | 2007-03-02 | 2012-11-07 | 日産化学工業株式会社 | 多核フェノールを含むレジスト下層膜形成組成物 |
| KR20090035970A (ko) * | 2007-10-08 | 2009-04-13 | 주식회사 동진쎄미켐 | 고 굴절률을 갖는 유기반사방지막 형성용 중합체 및 이를포함하는 조성물 |
| JP5609882B2 (ja) * | 2009-09-29 | 2014-10-22 | Jsr株式会社 | パターン形成方法及びレジスト下層膜形成用組成物 |
| JP5929660B2 (ja) * | 2012-09-19 | 2016-06-08 | Dic株式会社 | ビフェノール−ナフトール樹脂、硬化性樹脂組成物、その硬化物、及びプリント配線基板 |
-
2023
- 2023-06-30 JP JP2024530997A patent/JPWO2024005194A1/ja active Pending
- 2023-06-30 WO PCT/JP2023/024419 patent/WO2024005194A1/ja not_active Ceased
- 2023-06-30 TW TW112124633A patent/TW202411187A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2024005194A1 (https=) | 2024-01-04 |
| WO2024005194A1 (ja) | 2024-01-04 |
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