TW202303909A - 具有電磁干擾屏蔽的半導體封裝及其製造方法 - Google Patents
具有電磁干擾屏蔽的半導體封裝及其製造方法 Download PDFInfo
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Abstract
提供一種具有電磁干擾屏蔽的半導體裝置及其製造方法。在一個實施例中,所述半導體裝置包含在所述半導體裝置的所有六個表面上的電磁干擾屏蔽而沒有使用分離的電磁干擾蓋。
Description
本發明的某些實施例關於具有電磁干擾(EMI)屏蔽的半導體封裝及其製造方法。
半導體封裝可發射電磁干擾,其可能干擾其他半導體封裝的操作。因此,各種半導體封裝可包含電磁干擾屏蔽以助於減少電磁干擾被發射並且阻隔來自其他來源的電磁干擾。
透過將習知和傳統方法的系統與本文其餘參考附圖所闡述的本發明揭露內容的一些態樣進行比較,習知和傳統方法的進一步限制和缺點將對所屬技術領域中具有通常知識者而言變得顯而易見。
本發明提供一種具有電磁干擾屏蔽的半導體封裝及其製造方法。
根據下文對較佳實施例的描述,本揭示的上述和其他目的將被描述或變得顯而易見。
本揭示的各種範例性實施例將參照隨附圖式而被詳細地描述,使得所屬技術領域中具有通常知識者可以製造並使用這些實施例。
本揭示的各個態樣可以以許多不同的形式來實施,並且不應該被解釋為侷限於在本闡述的範例性實施例中。而是,提供本揭示的這些範例性實施例,使得本揭示是徹底且完整的,並將向所屬技術領域中具有通常知識者傳達本揭示的各個態樣。
這裡所使用的術語僅僅是為了描述特定實施例的目的,並不意圖限制本揭示。在圖式中,為了清楚起見,層和區域的厚度可能被誇大。相同的元件符號始終代表相同的元件。
如本文所使用的,“及/或”表示透過“及/或”連接的列表中的任何一個或多個項目。作為範例,“x及/或y”表示三元素集合{(x),(y),(x,y)}中的任何元素。換句話說,“x及/或y”表示“x和y中的一個或兩個”。作為另一個例子,“x、y及/或z”表示七元素集合{(x),(y),(z),(x,y),(x,z),(y,z),(x,y,z)}。換句話說,“x、y及/或z”表示“x、y和z中的一個或多個”。如本文所使用的,用語“示例性”代表是非限制性的範例、例子或例證。如本文所使用的,用語“例如”和“舉例而言”列出一個或多個非限制性的範例、例子或例證。
再者,單數形式也意圖包括複數形式,除非上下文另有明確指出。進一步理解,在本說明書中使用的用語“包括”、“包含”、“包括有”以及“包含有”指定存在所描述的特徵、數量、步驟、操作、元件及/或組件,但不排除存在或添加一個或多個其他特徵、數量、步驟、操作、元件、組件及/或其群組。
再者,將可以理解的是當元件A被稱為“連接到(或耦合到)”元件B,則所述元件A可以直接連接到(或耦合到)所述元件B,或者是中間元件C可出現在所述元件A和B之間,使得所述元件A間接連接到所述元件B。
又,雖然可使用術語第一、第二等來描述各種部件、元件、區域、層和/或區段,但是這些部件、元件、區域、層和/或區段不應受這些術語所限制。這些術語僅用於將一個部件、元件、區域、層和/或區段與另一者區分開。因此,舉例而言,在不脫離本揭示的教示的情況下,下面討論的第一部件、第一元件、第一區域、第一層和/或第一區段可被稱為第二部件、第二元件、第二區域、第二層和/或第二區段。
類似地,諸如“上部”、“下部”、“側邊”和類似者的空間相關術語會在本文中使用,以利於描述所附圖式中的一元件或特徵與另一元件或特徵的關係。將理解的是,空間相關術語旨在包括除了所附圖示中所繪的指向之外的使用或操作中的裝置的不同取向。舉例而言,如果所述裝置在圖式中被上下翻轉,被描述為在其他元件或是特徵“之下”或“下面”的元件將被定向為在所述其他元件或是特徵“之上”。因此,範例性術語“在…之下”可以涵蓋上方和下方兩種方向。
為了便於參考,根據本揭示的實施例的所有側面都被屏蔽的半導體裝置可被稱為半導體封裝。然而,使用此用語“半導體封裝”並不以任何方式限制本揭示的各種實施例。
為了使描述/解釋更清楚,圖式和描述可以省略半導體裝置/封裝的一些部分。因此,應當理解的是,本揭示的各種實施例可以包括不在本文描述之特定的部分(例如,通孔、一個或多個電連接層、一個或多個介電層/鈍化/絕緣層、底部填充物…等等)。
圖1是各種裝置的示意圖,這些裝置可能彼此互相干擾。參照圖1,顯示智慧型手機100和筆記型電腦102。在一般的操作之下,所述智慧型手機100和所述筆記型電腦102可彼此無線地通信。然而,這些裝置的每一個也可能發射對於其他裝置是沒有幫助的電子訊號(雜訊)。在某些情況之下,所述雜訊可能足夠強而干擾到其他裝置的操作。某些物件可能也想要減少裝置所發射出的電子訊號以用於安全性目的。舉例來說,筆記型電腦所發射出來的電子訊號可被附近的人所接收以重建顯示於所述筆記型電腦的顯示影像。
為了減少裝置所發射出來的雜訊以及減少感受到來自其他裝置的雜訊,裝置製造者可對於所述裝置提供電磁干擾(EMI)屏蔽。所述電磁干擾屏蔽可能在系統級(例如對於整個智慧型手機100或筆記型電腦102)、在晶片或電子構件級(例如半導體封裝或半導體晶粒)或是在不同層級之間。
因此,本說明書的範例性實施例可以是半導體封裝,其包含一個或多個半導體裝置、在所述半導體封裝的所有外部表面上的電磁干擾(EMI)屏蔽以及開口,在所述開口中放置有電性互連以形成與襯墊的電性接觸。
本說明書的另一範例性實施例可以是一種用於屏蔽半導體裝置的方法,其中所述方法包含對於包含頂部囊封物和底部囊封物的所述半導體裝置,附接第一載體到所述底部囊封物的底部表面,例如當所述半導體裝置不具有已附接的第一載體時。所述方法可包含在沒有被所述第一載體所覆蓋的所述半導體裝置的所有外表面上形成外部電磁干擾屏蔽。第二載體可被附接到所述頂部囊封物的頂部表面並且所述第一載體可從所述半導體裝置的所述底部囊封物移除。外部底部電磁干擾屏蔽可接著被形成於所述底部囊封物的底部表面上。
本說明書的另外的範例性實施例可以是一種包含半導體裝置的半導體封裝,其中所述半導體封裝也包含頂部囊封物和底部囊封物,並且所述頂部囊封物可囊封所述半導體裝置中的至少兩個。電磁干擾(EMI)屏蔽可在所述半導體封裝的所有外部表面上,並且內部電磁干擾屏蔽可在所述半導體裝置中的兩個之間。再者,電性互連可透過襯墊以電性連接至所述半導體裝置中的至少一個,其中所述襯墊是位在所述底部囊封物中。
圖2是圖示根據本揭示的範例性實施例的半導體封裝之橫截面視圖。參照圖2,顯示半導體封裝200,其經電磁干擾屏蔽於所述半導體封裝200的所有六個側面上。所述半導體封裝200包含由囊封物210所覆蓋的半導體晶粒212、214以及由囊封物220所覆蓋的半導體晶粒222、224。所述半導體晶粒212、214、222和224可被電性地連接至不同的導電跡線204(通孔、重新分佈層(RDLs)、襯墊、導線、電性互連…等)。所述導電跡線204可被埋藏,例如被埋藏在基板201(例如有芯(cored)或無芯(coreless)基板、印刷電路板、包含一個或多個介電層及/或導電層的組合式訊號分佈結構…等等)中。電子裝置232可被連接至所述導電跡線204,所述導電跡線204可例如被部分地或全部地埋置在所述基板201中。所述導電跡線204和所述電子裝置232可被認為例如是所述基板201的一部份。電子裝置234也可被耦接至所述基板201的下表面。所述電子裝置232和234的每一個可以是被動裝置、主動裝置或被動裝置和主動裝置的結合。
所述電子連接器206(例如互連結構,像是導電球或凸塊、導電柱或桿…等等)可被耦接至所述襯墊208,所述襯墊208在所述基板201的下側。所述電子裝置234、所述電子連接器206以及所述襯墊208可被囊封物230所覆蓋。
當所述用語“囊封物”被使用時,應理解的是任何覆蓋或囊封所述各種半導體晶粒212、214、222和224、所述電子裝置232和234、所述導電跡線204、所述襯墊208…等等的相似結構也可以被稱為“囊封物”。因此,模製成型也可以是囊封物的範例。囊封物可包含囊封物材料/層、絕緣材料/層、鈍化材料/層、介電材料/層…等等。
囊封物材料的一些範例可以是預浸漬材料(pre-preg)、組成膜(build-up film)、聚合物、聚醯亞胺(PI)、苯環丁烯(BCB)、聚苯噁唑(PBO)、雙馬來醯亞胺-三氮雜苯(BT)、模製材料、酚醛樹脂(phenolic resin)、環氧、矽、丙烯酸聚合物、前述材料之組合物、前述材料之等同物…等等。
內屏蔽202’可運作以阻隔電磁訊號與所述經囊封物210所覆蓋的裝置,反之亦然。在所述半導體封裝200的所述頂部、底部、四個側面上的外屏蔽202可運作以阻隔來自所述半導體封裝200的電磁訊號傳播到半導體封裝200的外側,並且阻隔來自其他半導體裝置(未顯示)的電磁訊號進入所述半導體封裝200。因為除了在所述半導體封裝200的底部的座落有所述電子連接器206的小區域之外,所述半導體封裝200已經在其的所有六個側面被電磁干擾屏蔽,所以由所述半導體封裝200所造成的電磁干擾對於其他電子裝置而言應該是最小的。相似地,由在所述半導體封裝200外部的其他電子裝置所造成的電磁干擾對於所述半導體封裝200而言可以是最小的。
雖然具體提到了半導體晶粒,然而本揭示的各種實施例也可包含阻隔來自/傳送到在所述半導體封裝200中的被動裝置(例如電阻器、電容器、電感器)以及來自訊號跡線的電磁干擾。此外,半導體晶粒可由半導體裝置所取代,所述半導體裝置可包含半導體晶粒、離散的主動裝置及/或被動裝置。
圖3-9是顯示根據本揭示的實施例屏蔽半導體裝置的各種階段之橫截面示圖。
圖10是用於根據本揭示的實施例屏蔽半導體裝置之範例性流程圖。圖3-9將更詳細地解釋關於圖10的範例性流程圖。
在方塊1002,圖3的包含兩側模製的裝置之半導體裝置300可被備製以用於電磁干擾屏蔽。所述備製的部份可例如為,如果沒有載體存在,則附接所述半導體裝置300至載體310。所述載體310可包含一層的材料,其被附接至所述半導體裝置300以允許各種操作和處理被執行於所述半導體裝置300上。舉例而言,所述載體310可包含金屬板、玻璃板、半導體晶圓或面板…等等。所述載體310可藉由任何各種方式而被附接至所述半導體裝置300,例如使用黏著劑(例如可熱剝離黏著劑、化學式可剝離黏著劑、紫外光可剝離黏著劑…等等)、使用真空壓力、使用機械箝夾…等等。
所述半導體裝置300可例如包含半導體晶粒312、314、322和324,以及電子裝置332和334,其可為被動裝置或主動裝置,或是被動裝置和主動裝置的組合。所述半導體裝置300也可以包含導電跡線302(通孔、RDL、襯墊、導線、電性互連…等等)。所述導電跡線302可例如被埋置在基板308中。所述半導體晶粒312、314、322和324可被囊封物306(例如上囊封物)所覆蓋,並且所述導電跡線302和所述電子裝置332可被埋置在所述基板308中。所述電子裝置334可被囊封物304(例如下囊封物)所覆蓋。應注意的是,所述囊封物306和所述囊封物304可以是相同材料,但是並非必須。
當所述用語“囊封物”被使用時,應理解的是任何覆蓋或囊封所述各種半導體晶粒312、314、322和324、所述電子裝置334…等等的相似結構也可以被稱為“囊封物”。因此,囊封物可包含任何適當的囊封物材料/層、絕緣材料/層、鈍化材料/層、介電材料/層…等等。
囊封物材料的一些範例可以是預浸漬材料(pre-preg)、組成膜(build-up film)、聚合物、聚醯亞胺(PI)、苯環丁烯(BCB)、聚苯噁唑(PBO)、雙馬來醯亞胺-三氮雜苯(BT)、模製材料、酚醛樹脂(phenolic resin)、環氧、矽、丙烯酸聚合物、前述材料之組合物、前述材料之等同物。
在方塊1004,內部屏蔽被形成。在圖4A的所述半導體裝置300中可看出,空間401被形成在所述囊封物306中,並且在圖4B的所述半導體裝置300中,內部屏蔽402被形成在所述空間401中。圖4A中所顯示的所述空間401可藉由移除所述囊封物306的一部份以形成所述分隔開的囊封物410和420而被形成,其中囊封物410覆蓋所述半導體晶粒312、314並且囊封物420覆蓋所述半導體晶粒322、324。可使用任何適當的方法使所述囊封物306的一部份清除而形成所述空間401,例如使用諸如切鋸的機械處理、使用化學處理、使用雷射、使用流體或氣體噴射…等等。舉例而言,所述空間401可完全地延伸在所述半導體裝置300的相對側之間,但是並非必須。舉例而言,所述空間401可被特徵化為一間隙、溝槽、孔洞…等等。
如圖4B中所示,所述空間401可被適當的用於電磁干擾屏蔽的材料填滿以形成所述內部屏蔽402。所述內部屏蔽402可以是適當的材料,其可以阻隔至少一些電磁干擾訊號。舉例而言,所述內部屏蔽402可包含一個或多個適當的屏蔽材料,像是銅、銀、金、鋁、錫、黃銅、青銅、鋼、超合金、μ金屬(mumetal)、石墨、複合材料…等等。
用於所述內部屏蔽402的所述材料可使用適當的沉積製程而被沉積,其是根據所述內部屏蔽402的尺寸及/或所述材料的特性,例如像是濺鍍、電鍍、無電電鍍、真空沉積、浸漬、印刷、注入、滿溢(flooding)…等等。
在方塊1006,外部電磁干擾屏蔽備提供於所述半導體裝置的五個側面處。舉例而言,圖5的半導體裝置300被顯示具有額外的外部屏蔽502在所述五個被曝露的(即沒有被載體310所覆蓋的)側面上。所述外部屏蔽502可由一個或多個適當的電磁干擾屏蔽材料所形成,例如像是銅、銀、金、鋁、錫、黃銅、青銅、鋼、超合金、μ金屬(mumetal)、石墨、複合材料…等等。用於所述外部屏蔽502的所述材料可使用適當的沉積製程而被沉積,例如像是濺鍍、電鍍、無電電鍍、真空沉積、浸漬、印刷、注入、滿溢(flooding)…等等。應注意的是,所述外部屏蔽502與所述內部屏蔽402可以是由相同材料所形成,但不必須是由相同材料所形成。又應注意的是,方塊1006以及在方塊1004中所述屏蔽的形成可使用相同的形成(或沉積)製程而被同時地執行。
在方塊1008,載體610是被加至所述半導體裝置300的頂部上,如圖6A中所示,並且所述載體310是從所述半導體裝置300的所述底部而被移除,如圖6B中所示。參照圖6A,舉例而言,所述載體610可相似於所述載體310而被附接至所述半導體裝置300的所述頂部。舉例而言,所述載體610可被附接至所述半導體裝置300的所述頂部,其是以相似於所述載體310被附接至所述半導體裝置300的所述底部的方式而被附接,或者是使用其他適當的方法而被附接。
參照圖6B,在附接所述載體610之後,可使用任何各種適當的方法移除所述載體310。舉例而言,所述載體310可被拉開或剝除;如果有使用黏著劑,所述黏著劑可被溶解或熱解膠或UV解膠;所述載體310可使用雷射、磨蝕、研磨、流體或氣體噴射…等等而被蝕刻或移除。因此,所述半導體裝置300的所述底部表面可被曝露。
在方塊1010,如圖7中所示,舉例而言,當所述頂部表面及/或所述垂直側表面被沉積有電磁干擾屏蔽材料,所述底部表面可被沉積有電磁干擾屏蔽材料。所述半導體裝置300現在被處理成為半導體封裝700,其中所有側面都被電磁干擾屏蔽。用於所述底部表面的外底部屏蔽702的所述電磁干擾屏蔽材料可相似於用於所述外部屏蔽502的所述電磁干擾屏蔽材料,雖然它們不必須為相同的材料。形成所述外底部屏蔽702的製程也可相似於形成用於所述半導體封裝700的所述頂部表面的所述外部屏蔽502的製程,雖然它們不必須為相同的方法。應注意的是,為了說明清楚,如圖7所示的裝置700的定向與其他圖保持一致。在所述外底部屏蔽702的形成過程中或是在本文所探討的任何處理步驟的過程中,所述裝置700的定向或顯示於本文中的任何範例裝置的定向都可被改變。
在方塊1012,圖8A的所述半導體封裝700可具有多個部份的所述電磁干擾屏蔽材料702並且所述囊封物304被移除以形成開口802,所述開口802提供通道給襯墊320。所述電磁干擾屏蔽材料702可以任何適當的方法被移除,例如機械磨蝕、化學蝕刻、雷射消蝕、使用流體或氣體噴射…等等。一但所述囊封物304被曝露,用於曝露所述襯墊320的所述製程可以是任何適當的方法。舉例來說,多個部份的所述囊封物304可使用適當的製程而被移除,例如雷射消蝕,然而,如果適合,也可以使用其他製程例如化學消蝕、機械消蝕、使用流體或氣體噴射以用於消蝕所述囊封物304的多個部份…等等。
所述消蝕製程可以是單一步驟或是多個步驟的製程。舉例而言,兩個步驟的消蝕製程被顯示於圖8B到8D。在顯示於圖8B和圖8C的第一個步驟中,例如雷射(或是其他材料移除技術)可被使用來移除所述電磁干擾屏蔽材料702以開啟所述開口802,並且所述雷射可被進一步用來移除所述囊封物材料304的第一期望部份以形成第一凹陷(或所述開口802的第一部份)。接著在圖8D所顯示的第二步驟中,所述雷射(或其他材料移除技術)可被使用以形成第二凹陷(或所述開口802的第二部份)以曝露所述襯墊320。舉例而言,所述第二凹陷可以窄於所述第一凹陷,但是這不是必須的情況。每個所述各別的凹陷(或開口部分)可以具有各別的垂直或斜側面。如圖8D中所示,在一範例性執行過程中,所述第二凹陷窄於所述第一凹陷,可能有隔板在所述第一凹陷和第二凹陷之間。例如,此隔板可以提供在電子連接器(其隨後被附接至所述襯墊320)和所述外底部屏蔽702之間的緩衝空間。
舉例而言,另一製程可以是三個步驟的製程,其包含首先移除所述電磁干擾屏蔽材料702,接著執行所述囊封物材料304的第一階段移除,接著執行所述囊封物材料304的第二階段移除。舉例而言,另一製程可以允許所述雷射(或氣體或液體的噴射)的多個掃描,其中所述凹陷的寬度是被所述雷射的每次掃描所控制。因此,各種製程可被使用以形成不同形狀的所述開口802以曝露所述襯墊320。
又在另一範例執行中,一個步驟製程可被使用以形成所述開口802。舉例而言,單一雷射消蝕(或是其他材料移除)步驟可被執行以形成所述開口802。在此執行中,所述開口802可具有連續側壁(例如,垂直側壁、斜側壁…等等)。
在方塊1014,圖9的所述半導體封裝700可具有附接到所述襯墊320的電性互連902。所述電性互連902可以是任何適當的互連,例如導電球或導電柱。所述導電球或導電柱可由任何適當的材料所製成。例如,所述電性互連902可以是焊球,其可被加熱(例如使用焊料回焊製程)至熔化所述焊球的至少一些,而當所述熔化的焊料冷卻時,則形成至所述襯墊320的連接。又舉例來說,所述電性互連902可包含銅柱或桿,其透過所述開口802而被放置在所述襯墊320上。任何適當的方法可被用來附接所述電性互連902到所述襯墊320。附接所述電性互連902的方法可根據所述互連的種類。
當所述半導體封裝700的所述電磁干擾屏蔽完成時,所述載體610可以一適當的方法被移除,所述方法可以是相似於關於所述載體310的方法。所述半導體封裝700可接著準備用於組裝件以作為例如印刷電路板的部份。
各種其他製程可被接著執行以用於屏蔽半導體裝置的所有六個側面。舉例而言,某些實施例可同時形成所述內部屏蔽402和所述外部屏蔽502。其它實施例可只有形成所述外部屏蔽502於所述半導體裝置300的垂直側表面的一部份上,以及所述外部屏蔽502在所述半導體裝置300的頂部表面上。接著,在隨後的步驟中,所述外部屏蔽502的殘留物可被形成於所述半導體裝置300的垂直側表面上,以及形成所述外底部屏蔽702在所述半導體裝置300的所述底部表面上。
在這樣的製程中,可能有另一步驟來鋪平可能是在所述半導體封裝700的所述垂直側表面上的所述外部屏蔽502的任何重疊。所述重疊可例如是,來自當所述外部屏蔽502被形成在所述半導體裝置300的所述頂部表面上時以及來自當所述外底部屏蔽702被形成在所述半導體裝置300的所述底部表面上時,發生在所述垂直側表面上的一給定區上的重疊。所述鋪平步驟也可以被用來實施於有需要的其他實施例。
此外,各種實施例也可以以填充材料、模製材料、絕緣材料或任何其他適當的材料回填所述開口。再者,所述內部屏蔽402、所述外部屏蔽502及/或所述外底部屏蔽702可選擇性地例如連接至所述半導體封裝700的接地路徑/平面或連接至電性互連,其中所述電性互連會被連接到所述半導體封裝700所安裝之裝置/PCB的接地路徑/平面。
舉例來說,參照圖9,所述內部屏蔽402、所述外部屏蔽502及/或所述外底部屏蔽702的接地可被做成,例如藉由電性連接所述內部屏蔽402到導電跡線302的接地部份或是藉由電性連接所述外部屏蔽502到所述半導體封裝700的所述側面處的所述導電跡線302的接地部份。
圖11是圖示根據本說明書的實施例的半導體封裝之橫截面示圖。參照圖11,顯示一實施例,其中所述內部屏蔽402、所述外部屏蔽502及/或所述外底部屏蔽702是電性連接至導電互連1102。在此情況中,形成電性連接1104可例如從所述外底部屏蔽702到導電互連1102。當此電性連接1104被形成,其中放置有所述導電互連1102的所述開口802可被回填以提供所述電性連接1104的支撐,所述電性連接1104將連接所述外底部屏蔽702到所述導電互連1102。所述回填1106可使用任何適當的材料,例如像是填充材料、模製材料、絕緣材料及/和其它適當的材料。用於回填的所述特定材料可例如根據用來做成所述囊封物304的材料。所述襯墊1108不是跟所述半導體封裝700的其他部份絕緣就是連接至所述半導體封裝700的接地跡線/平面。
在另一實施中,第一個所述開口802(例如對應於接地互連)可被形成而窄於其他的所述開口802(例如對應於一般電訊號)。在此實施中,當所述互連被形成時(例如焊料回焊),所述互連可與所述外底部屏蔽電性接觸以提供接地訊號接觸。
然而,典型的半導體裝置可具有六側面,此敘述也適用於具有不同數目的側面的半導體裝置。此外,所述半導體裝置可具有不同數量的半導體晶粒、不同數量的內部屏蔽、不同數量的半導體晶粒的層…等等。此外,當所述各種半導體裝置/封裝200、300、700被描述有包含半導體晶粒時,應理解的是,半導體裝置/封裝可包含其他半導體裝置/封裝、半導體晶粒、被動裝置…等等。
此外,當描述於此的所述電性互連902被電性連接至所述襯墊320,所述襯墊320是被所述囊封物304覆蓋,然而本揭示的各種實施例不需要被此限縮。舉例來說,襯墊320可被埋置在所述囊封物304之中,而至少所述襯墊320的底部表面被曝露。然而,應注意的是,如果除了所述襯墊320的底部表面還有其它地方從所述囊封物304曝露,且如果所述外底部屏蔽702和所述襯墊320之間的電性連接是不希望的,則所述襯墊320的所述曝露區可能需要被絕緣以防止對於所述外底部屏蔽702的短路。所述絕緣不是被提供於所述囊封物304的形成期間就是在形成所述外底部屏蔽702之前藉由額外的步驟所提供。
儘管已經參照某些支持實施例描述了根據本揭示的各種態樣的具有電磁干擾屏蔽的半導體封裝及其製造方法,但是所屬技術領域中具有通常知識者將會理解,本揭示不限於所揭露的特定實施例,而是本揭示將包括落入所附申請專利範圍的範疇內的所有實施例。
100:智慧型手機
102:筆記型電腦
200:半導體封裝
201:基板
202:外屏蔽
202’:內屏蔽
204:導電跡線
206:電子連接器
208:襯墊
210:囊封物
212:半導體晶粒
214:半導體晶粒
220:囊封物
222:半導體晶粒
224:半導體晶粒
230:囊封物
232:電子裝置
234:電子裝置
300:半導體裝置
302:導電跡線
304:囊封物/囊封物材料
306:囊封物
308:基板
310:載體
312:半導體晶粒
314:半導體晶粒
320:襯墊
322:半導體晶粒
324:半導體晶粒
332:電子裝置
334:電子裝置
401:空間
402:內部屏蔽
410:囊封物
420:囊封物
502:外部屏蔽
610:載體
700:半導體封裝/裝置/設備
702:外底部屏蔽/電磁干擾屏蔽材料
802:開口
902:電性互連
1002-1014:步驟方塊
[圖1]是可能會互相干擾之多個裝置的示意圖。
[圖2]是圖示根據本揭示的範例性實施例的半導體封裝之橫截面視圖。
[圖3-9]是圖示根據本揭示的範例性實施例屏蔽半導體裝置的各個階段之橫截面視圖。
[圖10]是根據本揭示的範例性實施例用於屏蔽半導體裝置的流程圖的範例。
[圖11]是圖示根據本揭示的範例性實施例的半導體封裝之橫截面視圖。
200:半導體封裝
201:基板
202:外屏蔽
202’:內屏蔽
204:導電跡線
206:電子連接器
208:襯墊
210:囊封物
212:半導體晶粒
214:半導體晶粒
220:囊封物
222:半導體晶粒
224:半導體晶粒
230:囊封物
232:電子裝置
234:電子裝置
Claims (20)
- 一種設備,包括: 基板,包括導電跡線、基板頂側、基板底側以及在所述基板頂側和所述基板底側之間的基板側壁; 第一半導體裝置,透過所述基板頂側耦合到所述導電跡線中的一個或多個; 第一囊封物,其囊封所述第一半導體裝置,所述第一囊封物包括第一囊封物頂側、第一囊封物底側以及在所述第一囊封物頂側和所述第一囊封物底側之間的第一囊封物側壁; 電磁干擾(EMI)屏蔽,包括: 電磁干擾屏蔽頂部部分,其覆蓋所述第一囊封物頂側; 電磁干擾屏蔽底部部分,其覆蓋所述基板底側;以及 電磁干擾屏蔽側壁部分,其覆蓋所述第一囊封物側壁和所述基板側壁;以及 電性互連,其在所述基板底側上,其中所述電性互連從所述電磁干擾屏蔽底部部分暴露並且經由所述基板底側耦合到所述導電跡線中的一個或多個。
- 如請求項1的設備,其中所述電磁干擾屏蔽完全覆蓋所述第一囊封物頂側、所述第一囊封物側壁和所述基板側壁。
- 如請求項1的設備,其包括: 第二半導體裝置,其透過所述基板頂側耦合到所述導電跡線中的一個或多個;以及 其中所述電磁干擾屏蔽包括在所述第一半導體裝置和所述第二半導體裝置之間的電磁干擾屏蔽內部部分。
- 如請求項3的設備,其中所述電磁干擾屏蔽內部部分將所述電磁干擾屏蔽耦合到所述導電跡線的接地部分。
- 如請求項1的設備,其包括: 接地互連; 其中所述接地互連延伸穿過所述電磁干擾屏蔽底部部分;以及 其中所述接地互連耦合到我述導電跡線的接地部分。
- 如請求項5的設備,其中: 當所述接地互連通過所述電磁干擾屏蔽底部部分時,所述接地互連接觸所述電磁干擾屏蔽底部部分;以及 所述電性互連通過所述電磁干擾屏蔽底部部分而不接觸所述電磁干擾屏蔽底部部分。
- 如請求項1的設備,其包括: 電子裝置,其耦合至所述基板底側;以及 第二囊封物,其囊封所述電子裝置。
- 如請求項7的設備,其中所述電磁干擾屏蔽底部部分完全覆蓋所述電子裝置在所述電磁干擾屏蔽底部部分上的正交投影。
- 如請求項8的設備,其中: 所述第二囊封物包括平坦表面;以及 所述電磁干擾屏蔽底部部分完全覆蓋所述第二囊封物的所述平坦表面。
- 如請求項8的設備,其中: 所述第二囊封物包括最下方表面;以及 所述電磁干擾屏蔽底部部分完全覆蓋所述第二囊封物的所述最下方表面。
- 如請求項1的設備,其包括: 第二囊封物,其囊封所述基板底側;以及 開口,其穿過所述電磁干擾屏蔽底部部分和所述第二囊封物; 其中所述電性互連通過所述開口; 其中所述開口包括: 所述第二囊封物中的第一凹陷; 所述第二囊封物中的第二凹陷;以及 在所述第一凹陷和所述第二凹陷之間的邊界處的隔板; 其中所述第二凹陷比所述第一凹陷更靠近所述基板底側;以及 其中所述第二凹陷的寬度窄於所述第一凹陷的寬度。
- 如請求項1的設備,其中所述第一半導體裝置包括半導體晶粒。
- 一種設備,包括: 基板,包括基板頂側、基板底側以及在所述基板頂側和所述基板底側之間的基板側壁; 第一半導體裝置,耦合到所述基板頂側; 第一囊封物,包括第一囊封物頂側、第一囊封物底側以及在所述第一囊封物頂側和所述第一囊封物底側之間的第一囊封物側壁,其中所述第一囊封物囊封所述第一半導體裝置和所述基板頂側; 電磁干擾(EMI)屏蔽,覆蓋所述第一囊封物頂側、所述第一囊封物側壁、所述基板側壁以及所述基板底側;以及 互連,其延伸穿過所述電磁干擾屏蔽並且耦合到所述基板底側。
- 如請求項13的設備,其中: 所述電磁干擾屏蔽包括電磁干擾屏蔽底部部分;以及 所述電磁干擾屏蔽底部部分除了互連通過的開口之外不包括開口。
- 如請求項13的設備,其中: 所述互連包括與最內側的右側互連分開第一距離的最內側的左側互連;以及 所述電磁干擾屏蔽沿著在所述最內側的左側互連和所述最內側的右側互連之間的所述第一距離的大部分覆蓋所述基板底側。
- 如請求項13的設備,其包括: 第二半導體裝置,耦合到所述基板頂側;以及 其中所述電磁干擾屏蔽包括在所述第一半導體裝置和所述第二半導體裝置之間的電磁干擾屏蔽內部部分。
- 如請求項16的設備,其中所述電磁干擾屏蔽內部部分將所述電磁干擾屏蔽耦合到所述基板的接地部分。
- 如請求項13的設備,其中: 所述互連包括電性互連和一個或多個接地互連; 每個接地互連延伸穿過在所述電磁干擾屏蔽中的相應接地互連開口並且在其相應接地互連開口處接觸所述電磁干擾屏蔽; 每個電性互連延伸穿過在所述電磁干擾屏蔽中的相應電性互連開口;以及 每個電性互連開口在通過其中的相應的所述電性互連和所述電磁干擾屏蔽之間提供相應間隙,所述間隙小於相應的所述電性互連的寬度。
- 一種方法,包括: 將第一半導體裝置耦合到基板的基板頂側,其中所述基板包括所述基板頂側、基板底側以及在所述基板頂側和所述基板底側之間的基板側壁; 將所述第一半導體裝置囊封在第一囊封物中,其中所物第一囊封物包括第一囊封物頂側、第一囊封物底側以及在所述第一囊封物頂側和所述第一囊封物底側之間的第一囊封物側壁; 用電磁干擾(EMI)屏蔽材料覆蓋所述第一囊封物頂側、所述第一囊封物側壁和所述基板側壁,以形成覆蓋所述第一囊封物頂側、所述第一囊封物側壁和所述基板側壁的第一電磁干擾屏蔽部分; 用所述電磁干擾屏蔽材料覆蓋所述基板底側以形成第二電磁干擾屏蔽部分,所述第二電磁干擾屏蔽部分覆蓋所述基板底側並且接觸所述第一電磁干擾屏蔽部分; 形成穿過所述第二電磁干擾屏蔽部分到所述基板底側的互連開口;以及 將互連連接到所述基板底側,使得所述互連通過所述互連開口。
- 如請求項19的方法,其包括: 將所述基板底側囊封在第二囊封物中; 其中用所述電磁干擾屏蔽材料覆蓋所述基板底側包括用所述電磁干擾屏蔽材料覆蓋所述第二囊封物的表面;以及 其中形成所述互連包括形成穿過所述第二囊封物的所述互連開口。
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