TW202303648A - 電漿處理裝置及電極機構 - Google Patents

電漿處理裝置及電極機構 Download PDF

Info

Publication number
TW202303648A
TW202303648A TW111112999A TW111112999A TW202303648A TW 202303648 A TW202303648 A TW 202303648A TW 111112999 A TW111112999 A TW 111112999A TW 111112999 A TW111112999 A TW 111112999A TW 202303648 A TW202303648 A TW 202303648A
Authority
TW
Taiwan
Prior art keywords
electrode
heating
plasma treatment
treatment device
shielding member
Prior art date
Application number
TW111112999A
Other languages
English (en)
Chinese (zh)
Inventor
松本直樹
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202303648A publication Critical patent/TW202303648A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
TW111112999A 2021-04-06 2022-04-06 電漿處理裝置及電極機構 TW202303648A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021064704 2021-04-06
JP2021-064704 2021-04-06

Publications (1)

Publication Number Publication Date
TW202303648A true TW202303648A (zh) 2023-01-16

Family

ID=83546097

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111112999A TW202303648A (zh) 2021-04-06 2022-04-06 電漿處理裝置及電極機構

Country Status (5)

Country Link
US (1) US20230402263A1 (https=)
JP (2) JP7682260B2 (https=)
KR (1) KR20230164658A (https=)
TW (1) TW202303648A (https=)
WO (1) WO2022215680A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026042624A1 (ja) * 2024-08-22 2026-02-26 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6027492B2 (ja) 2013-05-22 2016-11-16 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP6218650B2 (ja) 2014-03-11 2017-10-25 東京エレクトロン株式会社 プラズマ処理装置
JP2017028111A (ja) 2015-07-23 2017-02-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP7002357B2 (ja) 2018-02-06 2022-01-20 株式会社日立ハイテク プラズマ処理装置
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
JP2020068247A (ja) 2018-10-23 2020-04-30 東京エレクトロン株式会社 シャワーヘッドおよび基板処理装置

Also Published As

Publication number Publication date
US20230402263A1 (en) 2023-12-14
JP7682260B2 (ja) 2025-05-23
JP2025114799A (ja) 2025-08-05
JPWO2022215680A1 (https=) 2022-10-13
WO2022215680A1 (ja) 2022-10-13
KR20230164658A (ko) 2023-12-04

Similar Documents

Publication Publication Date Title
CN108281342B (zh) 等离子体处理装置
KR102594442B1 (ko) 플라즈마 처리 장치
KR102710625B1 (ko) 플라즈마 처리 장치
JP6986937B2 (ja) プラズマ処理装置
KR20190009715A (ko) 플라즈마 처리 장치
JP2019140155A (ja) プラズマ処理装置
JP6738485B2 (ja) 低圧リフトピンキャビティハードウェア
KR20240107335A (ko) 정전 척 및 플라즈마 처리 장치
TW202329196A (zh) 電漿處理裝置
KR20250161469A (ko) 기판 지지체 및 기판 처리 장치
JP2025114799A (ja) プラズマ処理装置及び基板支持体
CN116598180A (zh) 等离子体处理装置
JP2024066928A (ja) プラズマ処理装置及び基板支持台
KR102770730B1 (ko) 기판 처리 장치 및 기판 처리 방법
JP7690575B2 (ja) 下部電極機構及び基板処理装置
JP2022088076A (ja) 配線異常の検知方法及びプラズマ処理装置
TWI917607B (zh) 電漿處理裝置用之電極及電漿處理裝置
JP2024018988A (ja) 基板支持器及びプラズマ処理装置
TW202331781A (zh) 電漿處理裝置
JP2022166511A (ja) プラズマ処理装置用の電極及びプラズマ処理装置
TW202316914A (zh) 電漿處理裝置
JP2024014108A (ja) プラズマ処理装置、載置台及びプラズマ処理方法
JP2025021959A (ja) プラズマ処理装置
JP2023097106A (ja) プラズマ処理装置
JP2024030838A (ja) プラズマ処理装置