JPWO2022215680A1 - - Google Patents

Info

Publication number
JPWO2022215680A1
JPWO2022215680A1 JP2023513012A JP2023513012A JPWO2022215680A1 JP WO2022215680 A1 JPWO2022215680 A1 JP WO2022215680A1 JP 2023513012 A JP2023513012 A JP 2023513012A JP 2023513012 A JP2023513012 A JP 2023513012A JP WO2022215680 A1 JPWO2022215680 A1 JP WO2022215680A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023513012A
Other languages
Japanese (ja)
Other versions
JP7682260B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022215680A1 publication Critical patent/JPWO2022215680A1/ja
Priority to JP2025080664A priority Critical patent/JP2025114799A/ja
Application granted granted Critical
Publication of JP7682260B2 publication Critical patent/JP7682260B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32651Shields, e.g. dark space shields, Faraday shields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32559Protection means, e.g. coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32541Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32532Electrodes
    • H01J37/32568Relative arrangement or disposition of electrodes; moving means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2023513012A 2021-04-06 2022-04-04 プラズマ処理装置及び電極機構 Active JP7682260B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025080664A JP2025114799A (ja) 2021-04-06 2025-05-13 プラズマ処理装置及び基板支持体

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021064704 2021-04-06
JP2021064704 2021-04-06
PCT/JP2022/017038 WO2022215680A1 (ja) 2021-04-06 2022-04-04 プラズマ処理装置及び電極機構

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025080664A Division JP2025114799A (ja) 2021-04-06 2025-05-13 プラズマ処理装置及び基板支持体

Publications (2)

Publication Number Publication Date
JPWO2022215680A1 true JPWO2022215680A1 (https=) 2022-10-13
JP7682260B2 JP7682260B2 (ja) 2025-05-23

Family

ID=83546097

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023513012A Active JP7682260B2 (ja) 2021-04-06 2022-04-04 プラズマ処理装置及び電極機構
JP2025080664A Pending JP2025114799A (ja) 2021-04-06 2025-05-13 プラズマ処理装置及び基板支持体

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025080664A Pending JP2025114799A (ja) 2021-04-06 2025-05-13 プラズマ処理装置及び基板支持体

Country Status (5)

Country Link
US (1) US20230402263A1 (https=)
JP (2) JP7682260B2 (https=)
KR (1) KR20230164658A (https=)
TW (1) TW202303648A (https=)
WO (1) WO2022215680A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026042624A1 (ja) * 2024-08-22 2026-02-26 東京エレクトロン株式会社 プラズマ処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014229734A (ja) * 2013-05-22 2014-12-08 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP2017028111A (ja) * 2015-07-23 2017-02-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2019140155A (ja) * 2018-02-06 2019-08-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2020055565A1 (en) * 2018-09-14 2020-03-19 Applied Materials, Inc. Semiconductor substrate supports with embedded rf shield
JP2020068247A (ja) * 2018-10-23 2020-04-30 東京エレクトロン株式会社 シャワーヘッドおよび基板処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6218650B2 (ja) 2014-03-11 2017-10-25 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014229734A (ja) * 2013-05-22 2014-12-08 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP2017028111A (ja) * 2015-07-23 2017-02-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2019140155A (ja) * 2018-02-06 2019-08-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2020055565A1 (en) * 2018-09-14 2020-03-19 Applied Materials, Inc. Semiconductor substrate supports with embedded rf shield
JP2020068247A (ja) * 2018-10-23 2020-04-30 東京エレクトロン株式会社 シャワーヘッドおよび基板処理装置

Also Published As

Publication number Publication date
TW202303648A (zh) 2023-01-16
US20230402263A1 (en) 2023-12-14
JP7682260B2 (ja) 2025-05-23
JP2025114799A (ja) 2025-08-05
WO2022215680A1 (ja) 2022-10-13
KR20230164658A (ko) 2023-12-04

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