KR20230164658A - 플라즈마 처리 장치 및 전극 기구 - Google Patents
플라즈마 처리 장치 및 전극 기구 Download PDFInfo
- Publication number
- KR20230164658A KR20230164658A KR1020237030767A KR20237030767A KR20230164658A KR 20230164658 A KR20230164658 A KR 20230164658A KR 1020237030767 A KR1020237030767 A KR 1020237030767A KR 20237030767 A KR20237030767 A KR 20237030767A KR 20230164658 A KR20230164658 A KR 20230164658A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- plasma processing
- heater electrode
- shield member
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Treatment Of Fiber Materials (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2021-064704 | 2021-04-06 | ||
| JP2021064704 | 2021-04-06 | ||
| PCT/JP2022/017038 WO2022215680A1 (ja) | 2021-04-06 | 2022-04-04 | プラズマ処理装置及び電極機構 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20230164658A true KR20230164658A (ko) | 2023-12-04 |
Family
ID=83546097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020237030767A Pending KR20230164658A (ko) | 2021-04-06 | 2022-04-04 | 플라즈마 처리 장치 및 전극 기구 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230402263A1 (https=) |
| JP (2) | JP7682260B2 (https=) |
| KR (1) | KR20230164658A (https=) |
| TW (1) | TW202303648A (https=) |
| WO (1) | WO2022215680A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026042624A1 (ja) * | 2024-08-22 | 2026-02-26 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015173027A (ja) | 2014-03-11 | 2015-10-01 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6027492B2 (ja) | 2013-05-22 | 2016-11-16 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| JP2017028111A (ja) | 2015-07-23 | 2017-02-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP7002357B2 (ja) | 2018-02-06 | 2022-01-20 | 株式会社日立ハイテク | プラズマ処理装置 |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| JP2020068247A (ja) | 2018-10-23 | 2020-04-30 | 東京エレクトロン株式会社 | シャワーヘッドおよび基板処理装置 |
-
2022
- 2022-04-04 JP JP2023513012A patent/JP7682260B2/ja active Active
- 2022-04-04 WO PCT/JP2022/017038 patent/WO2022215680A1/ja not_active Ceased
- 2022-04-04 KR KR1020237030767A patent/KR20230164658A/ko active Pending
- 2022-04-06 TW TW111112999A patent/TW202303648A/zh unknown
-
2023
- 2023-08-28 US US18/239,006 patent/US20230402263A1/en active Pending
-
2025
- 2025-05-13 JP JP2025080664A patent/JP2025114799A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015173027A (ja) | 2014-03-11 | 2015-10-01 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202303648A (zh) | 2023-01-16 |
| US20230402263A1 (en) | 2023-12-14 |
| JP7682260B2 (ja) | 2025-05-23 |
| JP2025114799A (ja) | 2025-08-05 |
| JPWO2022215680A1 (https=) | 2022-10-13 |
| WO2022215680A1 (ja) | 2022-10-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108281342B (zh) | 等离子体处理装置 | |
| JP7090465B2 (ja) | 載置台及びプラズマ処理装置 | |
| KR102383357B1 (ko) | 배치대 및 기판 처리 장치 | |
| JP4819411B2 (ja) | プラズマ処理装置 | |
| CN109509694B (zh) | 等离子体处理装置和等离子体处理方法 | |
| KR102710625B1 (ko) | 플라즈마 처리 장치 | |
| KR20240107335A (ko) | 정전 척 및 플라즈마 처리 장치 | |
| WO2015178229A1 (ja) | 基板処理装置 | |
| JP2023044634A (ja) | プラズマ処理装置 | |
| JP2023044379A (ja) | プラズマ処理装置 | |
| KR20250161469A (ko) | 기판 지지체 및 기판 처리 장치 | |
| US20190164727A1 (en) | Part for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus | |
| JP2025114799A (ja) | プラズマ処理装置及び基板支持体 | |
| KR20230041624A (ko) | 플라스마 처리 장치 | |
| JP7246450B2 (ja) | 基板処理装置及び基板処理方法 | |
| JP7419611B1 (ja) | 伝熱ガスのリーク量低減方法 | |
| JP2011171763A (ja) | 電極アッセンブリ及びプラズマ処理装置 | |
| KR20230141596A (ko) | 기판 처리 장치 | |
| JP7690575B2 (ja) | 下部電極機構及び基板処理装置 | |
| CN116598180A (zh) | 等离子体处理装置 | |
| JP2022088076A (ja) | 配線異常の検知方法及びプラズマ処理装置 | |
| KR102770730B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
| JP2023097106A (ja) | プラズマ処理装置 | |
| US12562344B2 (en) | Plasma processing apparatus | |
| KR102958019B1 (ko) | 플라즈마 처리 방법 및 플라즈마 처리 장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| A201 | Request for examination | ||
| D21 | Rejection of application intended |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| P11 | Amendment of application requested |
Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| D22 | Grant of ip right intended |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |