JP7682260B2 - プラズマ処理装置及び電極機構 - Google Patents

プラズマ処理装置及び電極機構 Download PDF

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Publication number
JP7682260B2
JP7682260B2 JP2023513012A JP2023513012A JP7682260B2 JP 7682260 B2 JP7682260 B2 JP 7682260B2 JP 2023513012 A JP2023513012 A JP 2023513012A JP 2023513012 A JP2023513012 A JP 2023513012A JP 7682260 B2 JP7682260 B2 JP 7682260B2
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Japan
Prior art keywords
electrode
plasma processing
heater electrode
heater
top plate
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JP2023513012A
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English (en)
Japanese (ja)
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JPWO2022215680A1 (https=
Inventor
直樹 松本
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of JPWO2022215680A1 publication Critical patent/JPWO2022215680A1/ja
Priority to JP2025080664A priority Critical patent/JP2025114799A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2023513012A 2021-04-06 2022-04-04 プラズマ処理装置及び電極機構 Active JP7682260B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025080664A JP2025114799A (ja) 2021-04-06 2025-05-13 プラズマ処理装置及び基板支持体

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021064704 2021-04-06
JP2021064704 2021-04-06
PCT/JP2022/017038 WO2022215680A1 (ja) 2021-04-06 2022-04-04 プラズマ処理装置及び電極機構

Related Child Applications (1)

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JP2025080664A Division JP2025114799A (ja) 2021-04-06 2025-05-13 プラズマ処理装置及び基板支持体

Publications (2)

Publication Number Publication Date
JPWO2022215680A1 JPWO2022215680A1 (https=) 2022-10-13
JP7682260B2 true JP7682260B2 (ja) 2025-05-23

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JP2023513012A Active JP7682260B2 (ja) 2021-04-06 2022-04-04 プラズマ処理装置及び電極機構
JP2025080664A Pending JP2025114799A (ja) 2021-04-06 2025-05-13 プラズマ処理装置及び基板支持体

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JP2025080664A Pending JP2025114799A (ja) 2021-04-06 2025-05-13 プラズマ処理装置及び基板支持体

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US (1) US20230402263A1 (https=)
JP (2) JP7682260B2 (https=)
KR (1) KR20230164658A (https=)
TW (1) TW202303648A (https=)
WO (1) WO2022215680A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026042624A1 (ja) * 2024-08-22 2026-02-26 東京エレクトロン株式会社 プラズマ処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014229734A (ja) 2013-05-22 2014-12-08 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP2017028111A (ja) 2015-07-23 2017-02-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2019140155A (ja) 2018-02-06 2019-08-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2020055565A1 (en) 2018-09-14 2020-03-19 Applied Materials, Inc. Semiconductor substrate supports with embedded rf shield
JP2020068247A (ja) 2018-10-23 2020-04-30 東京エレクトロン株式会社 シャワーヘッドおよび基板処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6218650B2 (ja) 2014-03-11 2017-10-25 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014229734A (ja) 2013-05-22 2014-12-08 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP2017028111A (ja) 2015-07-23 2017-02-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2019140155A (ja) 2018-02-06 2019-08-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
WO2020055565A1 (en) 2018-09-14 2020-03-19 Applied Materials, Inc. Semiconductor substrate supports with embedded rf shield
JP2020068247A (ja) 2018-10-23 2020-04-30 東京エレクトロン株式会社 シャワーヘッドおよび基板処理装置

Also Published As

Publication number Publication date
TW202303648A (zh) 2023-01-16
US20230402263A1 (en) 2023-12-14
JP2025114799A (ja) 2025-08-05
JPWO2022215680A1 (https=) 2022-10-13
WO2022215680A1 (ja) 2022-10-13
KR20230164658A (ko) 2023-12-04

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