TW202231798A - 經厚膜化之光阻圖案的製造方法、厚膜化溶液、及加工基板的製造方法 - Google Patents
經厚膜化之光阻圖案的製造方法、厚膜化溶液、及加工基板的製造方法 Download PDFInfo
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- DMQSHEKGGUOYJS-UHFFFAOYSA-N n,n,n',n'-tetramethylpropane-1,3-diamine Chemical compound CN(C)CCCN(C)C DMQSHEKGGUOYJS-UHFFFAOYSA-N 0.000 description 1
- VEFSEKIJPJNXBM-UHFFFAOYSA-N n,n,n',n'-tetrapropylbutane-1,4-diamine Chemical compound CCCN(CCC)CCCCN(CCC)CCC VEFSEKIJPJNXBM-UHFFFAOYSA-N 0.000 description 1
- HVBXZPOGJMBMLN-UHFFFAOYSA-N n,n,n',n'-tetrapropylethane-1,2-diamine Chemical compound CCCN(CCC)CCN(CCC)CCC HVBXZPOGJMBMLN-UHFFFAOYSA-N 0.000 description 1
- FQELQRCSRAWQAB-UHFFFAOYSA-N n,n,n',n'-tetrapropylpropane-1,3-diamine Chemical compound CCCN(CCC)CCCN(CCC)CCC FQELQRCSRAWQAB-UHFFFAOYSA-N 0.000 description 1
- ASQZVMZPZFWONG-UHFFFAOYSA-N naphthalene-1,4-disulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=C(S(O)(=O)=O)C2=C1 ASQZVMZPZFWONG-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003141 primary amines Chemical group 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 150000003335 secondary amines Chemical group 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XDRDMVYFQARLNH-UHFFFAOYSA-N tridecan-1-amine;hydrochloride Chemical compound Cl.CCCCCCCCCCCCCN XDRDMVYFQARLNH-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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| JP2020-209190 | 2020-12-17 | ||
| JP2020209190A JP2022096214A (ja) | 2020-12-17 | 2020-12-17 | 厚膜化されたレジストパターンの製造方法、厚膜化溶液、および加工基板の製造方法 |
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| EP4649359A1 (en) | 2023-01-13 | 2025-11-19 | Merck Patent GmbH | Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device |
| CN120981776A (zh) | 2023-03-20 | 2025-11-18 | 默克专利有限公司 | 厚膜化组合物、制造经厚膜化的抗蚀剂图案的方法、以及制造经加工基板的方法 |
| TW202538046A (zh) | 2023-10-25 | 2025-10-01 | 德商默克專利有限公司 | 電子機器製造水溶液、光阻圖案之製造方法及裝置之製造方法 |
| WO2025228950A1 (en) | 2024-05-02 | 2025-11-06 | Merck Patent Gmbh | Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device |
| WO2026032911A1 (en) | 2024-08-07 | 2026-02-12 | Merck Patent Gmbh | Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device |
| WO2026046920A1 (en) | 2024-08-28 | 2026-03-05 | Merck Patent Gmbh | Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device |
| WO2026046961A1 (en) | 2024-08-28 | 2026-03-05 | Merck Patent Gmbh | Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device |
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| JP2845176B2 (ja) * | 1995-08-10 | 1999-01-13 | 日本電気株式会社 | 半導体装置 |
| JPH1124286A (ja) * | 1997-07-02 | 1999-01-29 | Citizen Watch Co Ltd | 感光性樹脂のパターン形成方法 |
| JP2000150502A (ja) * | 1998-11-16 | 2000-05-30 | Matsushita Electronics Industry Corp | 有機絶縁膜の形成方法 |
| JP6157151B2 (ja) | 2013-03-05 | 2017-07-05 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法 |
| JP6159746B2 (ja) * | 2014-02-28 | 2017-07-05 | 富士フイルム株式会社 | パターン形成方法、処理剤、電子デバイス及びその製造方法 |
| TWI607285B (zh) * | 2014-03-14 | 2017-12-01 | Az電子材料盧森堡有限公司 | 微細光阻圖案形成用組成物及使用其之圖案形成方法 |
| JP2017165846A (ja) | 2016-03-15 | 2017-09-21 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | 微細パターン形成用組成物およびそれを用いた微細パターン形成方法 |
| JP6838369B2 (ja) * | 2016-11-28 | 2021-03-03 | Hdマイクロシステムズ株式会社 | ネガ型感光性樹脂組成物、硬化パターンの製造方法、硬化物及び電子デバイス |
| JP7001374B2 (ja) * | 2017-06-19 | 2022-02-04 | 東京エレクトロン株式会社 | 成膜方法、記憶媒体及び成膜システム |
| JP7241502B2 (ja) * | 2018-10-18 | 2023-03-17 | 旭化成株式会社 | 感光性樹脂組成物、硬化レリーフパターンの製造方法 |
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| CN116635794A (zh) | 2023-08-22 |
| JP2022096214A (ja) | 2022-06-29 |
| EP4264376A1 (en) | 2023-10-25 |
| KR20230117233A (ko) | 2023-08-07 |
| WO2022129015A1 (en) | 2022-06-23 |
| JP2023554214A (ja) | 2023-12-27 |
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