TW202231798A - 經厚膜化之光阻圖案的製造方法、厚膜化溶液、及加工基板的製造方法 - Google Patents

經厚膜化之光阻圖案的製造方法、厚膜化溶液、及加工基板的製造方法 Download PDF

Info

Publication number
TW202231798A
TW202231798A TW110147171A TW110147171A TW202231798A TW 202231798 A TW202231798 A TW 202231798A TW 110147171 A TW110147171 A TW 110147171A TW 110147171 A TW110147171 A TW 110147171A TW 202231798 A TW202231798 A TW 202231798A
Authority
TW
Taiwan
Prior art keywords
mass
photoresist
thickening
layer
polymer
Prior art date
Application number
TW110147171A
Other languages
English (en)
Chinese (zh)
Inventor
長原達郎
山本和磨
Original Assignee
德商默克專利有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商默克專利有限公司 filed Critical 德商默克專利有限公司
Publication of TW202231798A publication Critical patent/TW202231798A/zh

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/322Aqueous alkaline compositions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/38Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW110147171A 2020-12-17 2021-12-16 經厚膜化之光阻圖案的製造方法、厚膜化溶液、及加工基板的製造方法 TW202231798A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-209190 2020-12-17
JP2020209190A JP2022096214A (ja) 2020-12-17 2020-12-17 厚膜化されたレジストパターンの製造方法、厚膜化溶液、および加工基板の製造方法

Publications (1)

Publication Number Publication Date
TW202231798A true TW202231798A (zh) 2022-08-16

Family

ID=79287964

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110147171A TW202231798A (zh) 2020-12-17 2021-12-16 經厚膜化之光阻圖案的製造方法、厚膜化溶液、及加工基板的製造方法

Country Status (6)

Country Link
EP (1) EP4264376A1 (https=)
JP (2) JP2022096214A (https=)
KR (1) KR20230117233A (https=)
CN (1) CN116635794A (https=)
TW (1) TW202231798A (https=)
WO (1) WO2022129015A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024141355A1 (en) 2022-12-26 2024-07-04 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
EP4649359A1 (en) 2023-01-13 2025-11-19 Merck Patent GmbH Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
CN120981776A (zh) 2023-03-20 2025-11-18 默克专利有限公司 厚膜化组合物、制造经厚膜化的抗蚀剂图案的方法、以及制造经加工基板的方法
TW202538046A (zh) 2023-10-25 2025-10-01 德商默克專利有限公司 電子機器製造水溶液、光阻圖案之製造方法及裝置之製造方法
WO2025228950A1 (en) 2024-05-02 2025-11-06 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device
WO2026032911A1 (en) 2024-08-07 2026-02-12 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device
WO2026046920A1 (en) 2024-08-28 2026-03-05 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device
WO2026046961A1 (en) 2024-08-28 2026-03-05 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2845176B2 (ja) * 1995-08-10 1999-01-13 日本電気株式会社 半導体装置
JPH1124286A (ja) * 1997-07-02 1999-01-29 Citizen Watch Co Ltd 感光性樹脂のパターン形成方法
JP2000150502A (ja) * 1998-11-16 2000-05-30 Matsushita Electronics Industry Corp 有機絶縁膜の形成方法
JP6157151B2 (ja) 2013-03-05 2017-07-05 アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP6159746B2 (ja) * 2014-02-28 2017-07-05 富士フイルム株式会社 パターン形成方法、処理剤、電子デバイス及びその製造方法
TWI607285B (zh) * 2014-03-14 2017-12-01 Az電子材料盧森堡有限公司 微細光阻圖案形成用組成物及使用其之圖案形成方法
JP2017165846A (ja) 2016-03-15 2017-09-21 アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ 微細パターン形成用組成物およびそれを用いた微細パターン形成方法
JP6838369B2 (ja) * 2016-11-28 2021-03-03 Hdマイクロシステムズ株式会社 ネガ型感光性樹脂組成物、硬化パターンの製造方法、硬化物及び電子デバイス
JP7001374B2 (ja) * 2017-06-19 2022-02-04 東京エレクトロン株式会社 成膜方法、記憶媒体及び成膜システム
JP7241502B2 (ja) * 2018-10-18 2023-03-17 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法

Also Published As

Publication number Publication date
CN116635794A (zh) 2023-08-22
JP2022096214A (ja) 2022-06-29
EP4264376A1 (en) 2023-10-25
KR20230117233A (ko) 2023-08-07
WO2022129015A1 (en) 2022-06-23
JP2023554214A (ja) 2023-12-27

Similar Documents

Publication Publication Date Title
TW202231798A (zh) 經厚膜化之光阻圖案的製造方法、厚膜化溶液、及加工基板的製造方法
KR101698400B1 (ko) 전자 장치 형성 방법
TWI301933B (en) Fine pattern forming material and fine pattern forming method using the same
CN100538531C (zh) 水溶性树脂组合物和使用该组合物形成图案的方法
TWI887299B (zh) 光阻圖案間置換液、及使用其之光阻圖案之製造方法
JP7520137B2 (ja) 電子機器製造水溶液、レジストパターンの製造方法およびデバイスの製造方法
WO2014132992A1 (ja) 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
TW583517B (en) Surface treatment process for chemically amplified resist and the material thereof
CN105103053A (zh) 微细抗蚀图案形成用组合物以及使用了其的图案形成方法
KR101426321B1 (ko) 미세 패턴 형성용 조성물 및 이것을 사용한 미세 패턴 형성 방법
CN108780284B (zh) 微细图案形成用组合物以及使用其的微细图案形成方法
JP2020507915A (ja) 半導体水溶性組成物、およびその使用
TW200836025A (en) Treatment liquid for developed resist substrate and treating method for resist substrate using therewith
CN104471487A (zh) 用于制造集成电路装置、光学装置、微机械及机械精密装置的组合物
US20240036469A1 (en) Method for manufacturing thickened resist pattern, thickening solution, and method for manufacturing processed substrate
JP2024507043A (ja) レジスト膜厚膜化組成物および厚膜化パターンの製造方法
KR20250127318A (ko) 전자기기 제조 수용액, 레지스트 패턴의 제조 방법 및 디바이스의 제조 방법
KR20250137630A (ko) 전자 기기 제조 수용액, 레지스트 패턴의 제조 방법 및 디바이스의 제조 방법
CN102227686A (zh) 抗蚀剂图形形成方法