CN116635794A - 制造厚膜化的抗蚀剂图案的方法、厚膜化溶液、以及制造经加工基板的方法 - Google Patents

制造厚膜化的抗蚀剂图案的方法、厚膜化溶液、以及制造经加工基板的方法 Download PDF

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Publication number
CN116635794A
CN116635794A CN202180084405.6A CN202180084405A CN116635794A CN 116635794 A CN116635794 A CN 116635794A CN 202180084405 A CN202180084405 A CN 202180084405A CN 116635794 A CN116635794 A CN 116635794A
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CN
China
Prior art keywords
mass
resist
thick film
solution
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180084405.6A
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English (en)
Chinese (zh)
Inventor
长原达郎
山本和磨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of CN116635794A publication Critical patent/CN116635794A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN202180084405.6A 2020-12-17 2021-12-14 制造厚膜化的抗蚀剂图案的方法、厚膜化溶液、以及制造经加工基板的方法 Pending CN116635794A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-209190 2020-12-17
JP2020209190A JP2022096214A (ja) 2020-12-17 2020-12-17 厚膜化されたレジストパターンの製造方法、厚膜化溶液、および加工基板の製造方法
PCT/EP2021/085640 WO2022129015A1 (en) 2020-12-17 2021-12-14 Method for manufacturing thickened resist pattern, thickening solution, and method for manufacturing processed substrate

Publications (1)

Publication Number Publication Date
CN116635794A true CN116635794A (zh) 2023-08-22

Family

ID=79287964

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180084405.6A Pending CN116635794A (zh) 2020-12-17 2021-12-14 制造厚膜化的抗蚀剂图案的方法、厚膜化溶液、以及制造经加工基板的方法

Country Status (6)

Country Link
EP (1) EP4264376A1 (https=)
JP (2) JP2022096214A (https=)
KR (1) KR20230117233A (https=)
CN (1) CN116635794A (https=)
TW (1) TW202231798A (https=)
WO (1) WO2022129015A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024141355A1 (en) 2022-12-26 2024-07-04 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
EP4649359A1 (en) 2023-01-13 2025-11-19 Merck Patent GmbH Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
CN120981776A (zh) 2023-03-20 2025-11-18 默克专利有限公司 厚膜化组合物、制造经厚膜化的抗蚀剂图案的方法、以及制造经加工基板的方法
TW202538046A (zh) 2023-10-25 2025-10-01 德商默克專利有限公司 電子機器製造水溶液、光阻圖案之製造方法及裝置之製造方法
WO2025228950A1 (en) 2024-05-02 2025-11-06 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device
WO2026032911A1 (en) 2024-08-07 2026-02-12 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device
WO2026046920A1 (en) 2024-08-28 2026-03-05 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device
WO2026046961A1 (en) 2024-08-28 2026-03-05 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201535053A (zh) * 2014-03-14 2015-09-16 Az Electronic Materials Luxembourg Sarl 微細光阻圖案形成用組成物及使用其之圖案形成方法
US20160327866A1 (en) * 2014-02-28 2016-11-10 Fujifilm Corporation Pattern forming method, treating agent, electronic device, and method for manufacturing the same

Family Cites Families (8)

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JP2845176B2 (ja) * 1995-08-10 1999-01-13 日本電気株式会社 半導体装置
JPH1124286A (ja) * 1997-07-02 1999-01-29 Citizen Watch Co Ltd 感光性樹脂のパターン形成方法
JP2000150502A (ja) * 1998-11-16 2000-05-30 Matsushita Electronics Industry Corp 有機絶縁膜の形成方法
JP6157151B2 (ja) 2013-03-05 2017-07-05 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP2017165846A (ja) 2016-03-15 2017-09-21 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細パターン形成用組成物およびそれを用いた微細パターン形成方法
JP6838369B2 (ja) * 2016-11-28 2021-03-03 Ｈｄマイクロシステムズ株式会社 ネガ型感光性樹脂組成物、硬化パターンの製造方法、硬化物及び電子デバイス
JP7001374B2 (ja) * 2017-06-19 2022-02-04 東京エレクトロン株式会社 成膜方法、記憶媒体及び成膜システム
JP7241502B2 (ja) * 2018-10-18 2023-03-17 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160327866A1 (en) * 2014-02-28 2016-11-10 Fujifilm Corporation Pattern forming method, treating agent, electronic device, and method for manufacturing the same
TW201535053A (zh) * 2014-03-14 2015-09-16 Az Electronic Materials Luxembourg Sarl 微細光阻圖案形成用組成物及使用其之圖案形成方法

Also Published As

Publication number Publication date
JP2022096214A (ja) 2022-06-29
EP4264376A1 (en) 2023-10-25
KR20230117233A (ko) 2023-08-07
TW202231798A (zh) 2022-08-16
WO2022129015A1 (en) 2022-06-23
JP2023554214A (ja) 2023-12-27

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