JP2022096214A - 厚膜化されたレジストパターンの製造方法、厚膜化溶液、および加工基板の製造方法 - Google Patents

厚膜化されたレジストパターンの製造方法、厚膜化溶液、および加工基板の製造方法 Download PDF

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Publication number
JP2022096214A
JP2022096214A JP2020209190A JP2020209190A JP2022096214A JP 2022096214 A JP2022096214 A JP 2022096214A JP 2020209190 A JP2020209190 A JP 2020209190A JP 2020209190 A JP2020209190 A JP 2020209190A JP 2022096214 A JP2022096214 A JP 2022096214A
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JP
Japan
Prior art keywords
mass
resist
layer
alkyl
polymer
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Pending
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JP2020209190A
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English (en)
Japanese (ja)
Inventor
達郎 長原
Tatsuro Nagahara
和磨 山本
Kazuma Yamamoto
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Merck Patent GmbH
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Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Priority to JP2020209190A priority Critical patent/JP2022096214A/ja
Priority to JP2023521424A priority patent/JP2023554214A/ja
Priority to PCT/EP2021/085640 priority patent/WO2022129015A1/en
Priority to EP21839848.5A priority patent/EP4264376A1/en
Priority to CN202180084405.6A priority patent/CN116635794A/zh
Priority to KR1020237023827A priority patent/KR20230117233A/ko
Priority to TW110147171A priority patent/TW202231798A/zh
Publication of JP2022096214A publication Critical patent/JP2022096214A/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2020209190A 2020-12-17 2020-12-17 厚膜化されたレジストパターンの製造方法、厚膜化溶液、および加工基板の製造方法 Pending JP2022096214A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2020209190A JP2022096214A (ja) 2020-12-17 2020-12-17 厚膜化されたレジストパターンの製造方法、厚膜化溶液、および加工基板の製造方法
JP2023521424A JP2023554214A (ja) 2020-12-17 2021-12-14 厚膜化されたレジストパターンの製造方法、厚膜化溶液、および加工基板の製造方法
PCT/EP2021/085640 WO2022129015A1 (en) 2020-12-17 2021-12-14 Method for manufacturing thickened resist pattern, thickening solution, and method for manufacturing processed substrate
EP21839848.5A EP4264376A1 (en) 2020-12-17 2021-12-14 Method for manufacturing thickened resist pattern, thickening solution, and method for manufacturing processed substrate
CN202180084405.6A CN116635794A (zh) 2020-12-17 2021-12-14 制造厚膜化的抗蚀剂图案的方法、厚膜化溶液、以及制造经加工基板的方法
KR1020237023827A KR20230117233A (ko) 2020-12-17 2021-12-14 후막화된 레지스트 패턴의 제조방법, 후막화 용액 및가공 기판의 제조방법
TW110147171A TW202231798A (zh) 2020-12-17 2021-12-16 經厚膜化之光阻圖案的製造方法、厚膜化溶液、及加工基板的製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020209190A JP2022096214A (ja) 2020-12-17 2020-12-17 厚膜化されたレジストパターンの製造方法、厚膜化溶液、および加工基板の製造方法

Publications (1)

Publication Number Publication Date
JP2022096214A true JP2022096214A (ja) 2022-06-29

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020209190A Pending JP2022096214A (ja) 2020-12-17 2020-12-17 厚膜化されたレジストパターンの製造方法、厚膜化溶液、および加工基板の製造方法
JP2023521424A Pending JP2023554214A (ja) 2020-12-17 2021-12-14 厚膜化されたレジストパターンの製造方法、厚膜化溶液、および加工基板の製造方法

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JP2023521424A Pending JP2023554214A (ja) 2020-12-17 2021-12-14 厚膜化されたレジストパターンの製造方法、厚膜化溶液、および加工基板の製造方法

Country Status (6)

Country Link
EP (1) EP4264376A1 (https=)
JP (2) JP2022096214A (https=)
KR (1) KR20230117233A (https=)
CN (1) CN116635794A (https=)
TW (1) TW202231798A (https=)
WO (1) WO2022129015A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024194227A1 (en) 2023-03-20 2024-09-26 Merck Patent Gmbh Thickening composition, method for manufacturing thickened resist pattern, and method for manufacturing processed substrate

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024141355A1 (en) 2022-12-26 2024-07-04 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
EP4649359A1 (en) 2023-01-13 2025-11-19 Merck Patent GmbH Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
TW202538046A (zh) 2023-10-25 2025-10-01 德商默克專利有限公司 電子機器製造水溶液、光阻圖案之製造方法及裝置之製造方法
WO2025228950A1 (en) 2024-05-02 2025-11-06 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device
WO2026032911A1 (en) 2024-08-07 2026-02-12 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device
WO2026046920A1 (en) 2024-08-28 2026-03-05 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device
WO2026046961A1 (en) 2024-08-28 2026-03-05 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2845176B2 (ja) * 1995-08-10 1999-01-13 日本電気株式会社 半導体装置
JPH1124286A (ja) * 1997-07-02 1999-01-29 Citizen Watch Co Ltd 感光性樹脂のパターン形成方法
JP2000150502A (ja) * 1998-11-16 2000-05-30 Matsushita Electronics Industry Corp 有機絶縁膜の形成方法
JP6157151B2 (ja) 2013-03-05 2017-07-05 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP6159746B2 (ja) * 2014-02-28 2017-07-05 富士フイルム株式会社 パターン形成方法、処理剤、電子デバイス及びその製造方法
TWI607285B (zh) * 2014-03-14 2017-12-01 Ａｚ電子材料盧森堡有限公司 微細光阻圖案形成用組成物及使用其之圖案形成方法
JP2017165846A (ja) 2016-03-15 2017-09-21 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細パターン形成用組成物およびそれを用いた微細パターン形成方法
JP6838369B2 (ja) * 2016-11-28 2021-03-03 Ｈｄマイクロシステムズ株式会社 ネガ型感光性樹脂組成物、硬化パターンの製造方法、硬化物及び電子デバイス
JP7001374B2 (ja) * 2017-06-19 2022-02-04 東京エレクトロン株式会社 成膜方法、記憶媒体及び成膜システム
JP7241502B2 (ja) * 2018-10-18 2023-03-17 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024194227A1 (en) 2023-03-20 2024-09-26 Merck Patent Gmbh Thickening composition, method for manufacturing thickened resist pattern, and method for manufacturing processed substrate
KR20250163951A (ko) 2023-03-20 2025-11-21 메르크 파텐트 게엠베하 후육화 조성물, 후육화된 레지스트 패턴의 제조 방법, 및 가공 기판의 제조 방법

Also Published As

Publication number Publication date
CN116635794A (zh) 2023-08-22
EP4264376A1 (en) 2023-10-25
KR20230117233A (ko) 2023-08-07
TW202231798A (zh) 2022-08-16
WO2022129015A1 (en) 2022-06-23
JP2023554214A (ja) 2023-12-27

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