KR20230117233A - 후막화된 레지스트 패턴의 제조방법, 후막화 용액 및가공 기판의 제조방법 - Google Patents

후막화된 레지스트 패턴의 제조방법, 후막화 용액 및가공 기판의 제조방법 Download PDF

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Publication number
KR20230117233A
KR20230117233A KR1020237023827A KR20237023827A KR20230117233A KR 20230117233 A KR20230117233 A KR 20230117233A KR 1020237023827 A KR1020237023827 A KR 1020237023827A KR 20237023827 A KR20237023827 A KR 20237023827A KR 20230117233 A KR20230117233 A KR 20230117233A
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KR
South Korea
Prior art keywords
mass
film
resist
thickening
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020237023827A
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English (en)
Korean (ko)
Inventor
다쓰로 나가하라
가즈마 야마모토
Original Assignee
메르크 파텐트 게엠베하
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Publication date
Application filed by 메르크 파텐트 게엠베하 filed Critical 메르크 파텐트 게엠베하
Publication of KR20230117233A publication Critical patent/KR20230117233A/ko
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020237023827A 2020-12-17 2021-12-14 후막화된 레지스트 패턴의 제조방법, 후막화 용액 및가공 기판의 제조방법 Ceased KR20230117233A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020209190A JP2022096214A (ja) 2020-12-17 2020-12-17 厚膜化されたレジストパターンの製造方法、厚膜化溶液、および加工基板の製造方法
JPJP-P-2020-209190 2020-12-17
PCT/EP2021/085640 WO2022129015A1 (en) 2020-12-17 2021-12-14 Method for manufacturing thickened resist pattern, thickening solution, and method for manufacturing processed substrate

Publications (1)

Publication Number Publication Date
KR20230117233A true KR20230117233A (ko) 2023-08-07

Family

ID=79287964

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237023827A Ceased KR20230117233A (ko) 2020-12-17 2021-12-14 후막화된 레지스트 패턴의 제조방법, 후막화 용액 및가공 기판의 제조방법

Country Status (6)

Country Link
EP (1) EP4264376A1 (https=)
JP (2) JP2022096214A (https=)
KR (1) KR20230117233A (https=)
CN (1) CN116635794A (https=)
TW (1) TW202231798A (https=)
WO (1) WO2022129015A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024141355A1 (en) 2022-12-26 2024-07-04 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
EP4649359A1 (en) 2023-01-13 2025-11-19 Merck Patent GmbH Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
CN120981776A (zh) 2023-03-20 2025-11-18 默克专利有限公司 厚膜化组合物、制造经厚膜化的抗蚀剂图案的方法、以及制造经加工基板的方法
TW202538046A (zh) 2023-10-25 2025-10-01 德商默克專利有限公司 電子機器製造水溶液、光阻圖案之製造方法及裝置之製造方法
WO2025228950A1 (en) 2024-05-02 2025-11-06 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device
WO2026032911A1 (en) 2024-08-07 2026-02-12 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device
WO2026046920A1 (en) 2024-08-28 2026-03-05 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device
WO2026046961A1 (en) 2024-08-28 2026-03-05 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014170190A (ja) 2013-03-05 2014-09-18 Az Electronic Materials Mfg Co Ltd 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP2017165846A (ja) 2016-03-15 2017-09-21 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細パターン形成用組成物およびそれを用いた微細パターン形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2845176B2 (ja) * 1995-08-10 1999-01-13 日本電気株式会社 半導体装置
JPH1124286A (ja) * 1997-07-02 1999-01-29 Citizen Watch Co Ltd 感光性樹脂のパターン形成方法
JP2000150502A (ja) * 1998-11-16 2000-05-30 Matsushita Electronics Industry Corp 有機絶縁膜の形成方法
JP6159746B2 (ja) * 2014-02-28 2017-07-05 富士フイルム株式会社 パターン形成方法、処理剤、電子デバイス及びその製造方法
TWI607285B (zh) * 2014-03-14 2017-12-01 Ａｚ電子材料盧森堡有限公司 微細光阻圖案形成用組成物及使用其之圖案形成方法
JP6838369B2 (ja) * 2016-11-28 2021-03-03 Ｈｄマイクロシステムズ株式会社 ネガ型感光性樹脂組成物、硬化パターンの製造方法、硬化物及び電子デバイス
JP7001374B2 (ja) * 2017-06-19 2022-02-04 東京エレクトロン株式会社 成膜方法、記憶媒体及び成膜システム
JP7241502B2 (ja) * 2018-10-18 2023-03-17 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014170190A (ja) 2013-03-05 2014-09-18 Az Electronic Materials Mfg Co Ltd 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP2017165846A (ja) 2016-03-15 2017-09-21 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細パターン形成用組成物およびそれを用いた微細パターン形成方法

Also Published As

Publication number Publication date
CN116635794A (zh) 2023-08-22
JP2022096214A (ja) 2022-06-29
EP4264376A1 (en) 2023-10-25
TW202231798A (zh) 2022-08-16
WO2022129015A1 (en) 2022-06-23
JP2023554214A (ja) 2023-12-27

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