TW202204572A - 量子點複合材料及其製備方法與led封裝結構 - Google Patents
量子點複合材料及其製備方法與led封裝結構 Download PDFInfo
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- TW202204572A TW202204572A TW109123915A TW109123915A TW202204572A TW 202204572 A TW202204572 A TW 202204572A TW 109123915 A TW109123915 A TW 109123915A TW 109123915 A TW109123915 A TW 109123915A TW 202204572 A TW202204572 A TW 202204572A
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Abstract
本發明公開一種量子點複合材料及其製備方法與LED封裝結構。量子點複合材料包括:多個量子點、包覆多個量子點的矽化合物包覆層以及配位錨定矽化合物包覆層的修飾基團。量子點複合材料的製備方法包括:混合步驟、微化步驟以及修飾步驟,通過混合多個量子點與聚矽氮烷,經過噴霧乾燥法固化、微化,再經過修飾得到量子點複合材料。LED封裝結構包括基板、至少一發光元件以及如前述的量子點複合材料。本發明的量子點複合材料及其製備方法與應用提供本發明的量子點複合材料較佳的穩定性以及LED封裝結構的發光效能。
Description
本發明涉及一種量子點複合材料及其製備方法與其應用,特別是涉及一種量子點複合材料及其製備方法與應用該量子點複合材料的LED封裝結構。
近年來,隨著顯示技術的不斷進步,人們對顯示器、照明光源的品質要求也越來越高。量子點由於其特有的量子限域效應引起了研究者的廣泛關注。相較於傳統的有機發光材料,量子點的LED封裝結構的發光效能具有半峰寬窄、顆粒小、無散射損失和光譜隨尺寸可調控和光化學性能穩定等優勢。此外,量子點的光學、電學和傳輸性能可以通過合成過程得以調整,這些優點使得量子點具有十分重要的作用。
然而,現有技術的量子點材料的製備方法仍面臨了難以製備均勻的量子點材料、控制量子點量,且所得到的量子點材料穩定性不佳。
本發明所要解決的技術問題在於,針對現有技術的不足提供一種量子點複合材料及其製備方法與LED封裝結構。
為了解決上述的技術問題,本發明所採用的其中一技術方案是提供一種量子點複合材料,其包括:多個量子點、包覆所述多個量子點的一矽化合物包覆層以及配位錨定所述矽化合物包覆層的一修飾基團。
為了解決上述的技術問題,本發明所採用的另外一技術方案是提供一種量子點複合材料的製備方法,包括:混合步驟、微化步驟以及修飾步驟。具體來說,混合步驟混合多個量子點與一聚矽氮烷,以形成一量子點混合物,進一步利用微化步驟利用噴霧乾燥法微化所述量子點混合物,最後藉由修飾步驟混合一修飾材料於所述量子點混合物,以得到一量子點複合材料。
為了解決上述的技術問題,本發明所採用的另外再一技術方案是提供一種量子點複合材料的製備方法,包括:混合步驟以及微化步驟。具體來說,混合步驟混合多個量子點與一聚矽氮烷與一修飾材料,以形成一量子點混合物,進一步利用噴霧乾燥法微化所述量子點混合物,以得到一量子點複合材料。
為了解決上述的技術問題,本發明所採用的另一技術方案是提供一種LED封裝結構,其包括:一基板;至少一發光元件,設置於所述基板上;以及一量子點複合材料,覆蓋所述至少一發光元件;其中,所述量子點複合材料包括:多個量子點、包覆所述多個量子點的一矽化合物包覆層以及配位錨定所述矽化合物包覆層的一修飾基團。
本發明的其中一有益效果在於,本發明所提供的量子點複合材料及其製備方法與LED封裝結構,其能通過“一修飾基團,其配位錨定所述矽化合物包覆層”的技術方案,以提供本發明的量子點複合材料較佳的穩定性以及LED封裝結構的發光效能。
為使能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本發明加以限制。
以下是通過特定的具體實施例來說明本發明所公開有關“量子點複合材料及其製備方法與LED封裝結構”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不背離本發明的構思下進行各種修改與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。
參閱圖1A至圖1B所示,本發明提供一種量子點複合材料,其包括:多個量子點11、包覆所述多個量子點11的矽化合物包覆層12以及配位錨定矽化合物包覆層12的修飾基團13。
具體來說,本發明所使用的多個量子點選自於由II-VI族量子點、III-V族量子點及鈣鈦礦量子點。較佳地,本發明的多個量子點可以是鈣鈦礦量子點。然而,本發明不以上述所舉的例子為限。
舉例來說,II-VI族量子點是選自CdSe、CdS、CdTe、ZnSe、ZnS、CdTe、ZnTe;CdZnS、CdZnSe、CdZnTe、ZnSeS、ZnSeTe、ZnTeS、CdSeS、CdSeTe、CdTeS、CdZnSeS、CdZnSeTe及CdZnSTe量子點所組成的群組。
舉例來說,III-V族量子點是選自InP、InAs、GaP、GaAs、GaSb、AlN、AlP;InAsP;InNP、InNSb、GaAlNP、InAlNP量子點所組成的群組。
舉例來說,鈣鈦礦量子點是選自CH3
NH3PbI3
、CH3
NH3
PbCl3
、CH3
NH3PbBr3
、CH3
NH3
PbI2
Cl、CH3
NH3
PbICl2
、CH3
NH3
PbI2
Br、CH3
NH3
PbIBr2
、CH3
NH3
PbIClBr、CsPbI3
、CsPbCl3
、CsPbBr3
、CsPbI2
Cl、CsPbICl2
、CsPbI2
Br、CsPbIBr2
及CsPbIClBr量子點所組成的群組。
更詳細來說,修飾基團13與矽化合物包覆層12反應形成-O-Si-(R)3
鍵結,其中,R是Cn
H2n+1
、n是介於0至5。進一步來說,修飾基團是來自於一修飾材料與矽化合物包覆層12的氧鍵結,舉例來說,修飾材料可以是六甲基二矽氮烷或具有碳數2至碳數5的烷基的疏水性矽氮烷。
參閱圖1B,其為修飾材料是六甲基二矽氮烷(HDMS)的示意圖,六甲基二矽氮烷與矽化合物包覆層12產生化學反應,如以下反應式:
2SiOH + [(CH3
)3
Si]2
NH → 2SiO[Si(CH3
)3
]2
+ NH3
。
然而,上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。
參閱圖2,本發明另提供一種量子點複合材料,進一步包括:一修飾材料14。換句話說,如圖2所示,其包括多個量子點11、矽化合物包覆層12以及修飾基團13,以及被包覆於矽化合物包覆層12的修飾材料14。也就是說,部分修飾材料14與矽化合物包覆層12形成修飾基團13的鍵結,部分未與矽化合物包覆層12形成鍵結的修飾材料14也被包覆在矽化合物包覆層12之中。
較佳地,本發明的量子點複合材料的粒徑大小介於50奈米(nm)至5微米(μm)之間。
參閱圖3,本發明所採用的另外一技術方案是提供一種量子點複合材料的製備方法,包括:混合步驟S100、微化步驟S102以及修飾步驟S104。具體來說,混合步驟S100混合多個量子點與聚矽氮烷,以形成一量子點混合物,進一步地,利用微化步驟S102通過噴霧乾燥法微化量子點混合物,最後藉由修飾步驟S104混合一修飾材料於所述量子點混合物,以得到一量子點複合材料。
詳細來說,相對於量子點複合材料總質量的含有比例沒有特別限定,優選地,多個量子點相對於組合物總量的含有比例通常為0.01至10wt%。在此範圍,可提供較佳的聚集特性,以及維持良好發光性。再者,每一多個量子點的平均粒徑沒有特別限定,優選地,可以是1nm至50nm以下,可維持較佳的晶體結構。
視需求地,可進一步添加溶劑,作為使多個量子點分散的介質。舉例而言,如甲酸甲酯、甲酸乙酯、甲酸丙酯、甲 酸戊酯、乙酸甲酯、乙酸乙酯、乙酸戊酯等酯;γ-丁內酯、N-甲基 -2-吡咯烷酮、丙酮、二甲基酮、二異丁基酮、環戊酮、環己酮、 甲基環己酮等酮;二乙基醚、甲基叔丁基醚、二異丙基醚、二甲 氧基甲烷、二甲氧基乙烷、1, 4-二噁烷、1, 3-二氧戊環、4-甲基二氧戊環、四氫呋喃、甲基四氫呋喃、茴香醚、苯乙醚等醚;甲醇、 乙醇、1-丙醇、2-丙醇、1-丁醇、2-丁醇、叔丁醇、1-戊醇、2-甲 基-2-丁醇、甲氧基丙醇、二丙酮醇、環己醇、2-氟乙醇、2, 2, 2-三 氟乙醇、2, 2, 3, 3-四氟-1-丙醇等醇;乙二醇單甲基醚、乙二醇單乙 基醚、乙二醇單丁基醚、乙二醇單乙基醚乙酸酯、三乙二醇二甲 基醚等二醇醚;N, N-二甲基甲醯胺、乙醯胺、N, N-二甲基乙醯胺 等具有醯胺基的有機溶劑;乙腈、異丁腈、丙腈、甲氧基乙腈等 具有腈基的有機溶劑;碳酸乙烯酯、碳酸丙烯酯等具有碳酸酯基 的有機溶劑;二氯甲烷、氯仿等具有鹵代烴基的有機溶劑;正戊 烷、環己烷、正己烷、苯、甲苯、二甲苯等具有烴基的有機溶劑;二甲基亞碸等。
進一步地,聚矽氮烷用以提供矽源以形成氧化矽、氮化矽或氮氧化矽的矽化合物包覆層包覆多個量子點,較佳地,聚矽氮烷和量子點的重量比例為10:1至1000:1,從而得到包覆厚度介於10nm至10μm的矽化合物包覆層。而聚矽氮烷分子式通式:-[R1
R2
Si-NR3
]-,其中,R1
、R2
、R3
分別獨立地表示氫原子、烷基、烯基、環烷基、芳基、烷基甲矽烷基、烷基氨基或烷氧基,較佳地,本發明所使用的聚矽氮烷是分子量介於200至3000。當R1
、R2
、R3
均為氫原子時,聚矽氮烷分子式為-[H2
Si-NH]n
-,稱為全氫聚矽氮烷 (PHPS),亦稱無機聚矽氮烷。如果聚矽氮烷鍵結有機團簇,則稱為有機聚矽氮烷。較佳地,聚矽氮烷可以是全氫聚矽氮烷 (PHPS),提供較佳的折射率。
微化步驟S102利用噴霧乾燥法在設定為150℃至500℃的入口溫度下,採用選自空氣、惰性氣體(例如氬氣)或氮氣的載氣通過噴霧乾燥從分散體中除去液體介質,以固化成為矽化合物包覆量子點的量子點微球。載氣優選氮氣,壓力可為0.20MPa至0.50MPa。噴嘴速度可為每小時500ml至3000ml,或者1000ml/小時至2000ml/小時,或者約1760ml/小時。
較佳地,藉由噴霧乾燥法所製造二氧化矽包覆量子點微球,依溶液配方比例與噴霧乾燥法設定條件的不同,微球平均粒徑介於10 nm至10 μm。
修飾步驟S104混合修飾材料於量子點混合物,修飾材料可以是六甲基二矽氮烷或具有碳數2至碳數5的烷基的疏水性矽氮烷,舉例而言,如四甲基二矽氮烷 (Tetramethyldisilazane)、六乙基二矽氮烷 (Hexarthyl disilazane)等。
修飾材料與量子點混合物混合,使得修飾基團配位錨定矽化合物包覆層,反應產生-O-Si-(R)3
鍵結,其中,R是Cn
H2n+1
、n是介於0至5。
參閱圖4,本發明另外再一技術方案是提供一種量子點複合材料的製備方法,包括:混合步驟S200以及微化步驟S202。具體來說,混合步驟S200混合多個量子點與聚矽氮烷與修飾材料,以形成量子點混合物,接著微化步驟S202通過噴霧乾燥法微化量子點混合物,以得到量子點複合材料。
更詳細來說,相較於圖3,此製備方法於混合步驟S200時添加修飾材料,以形成多個量子點11、矽化合物包覆層12以及修飾基團13,以及被包覆於矽化合物包覆層12的修飾材料14。也就是說,部分修飾材料14與矽化合物包覆層12形成修飾基團13的鍵結,部分未與矽化合物包覆層12形成鍵結的修飾材料14也被包覆在矽化合物包覆層12之中。
微化步驟S202如前述內容,不再多做贅述。
參閱圖5,本發明所採用的另一技術方案是提供一種LED封裝結構,其包括:基板20、至少一發光元件30以及量子點複合材料M。至少一發光元件30設置於基板20的一表面上,量子點複合材料M覆蓋至少一發光元件30。
較佳地,量子點複合材料M覆蓋至少一發光元件30相對於基板20的表面以及側面,量子點複合材料M的詳細材料與配置已詳述於上述段落中,於此便不再贅述。
至少一發光元件30,例如可列舉發光二極體(LED,Light Emitting Diode)晶片。LED封裝結構至少搭載一個發光元件,亦可為複數個,且多個發光元件可串聯連接或並聯連接。
視需求,進一步包括配線形成於基體之至少上表面,亦可形成於基體之內部及/或側面及/或下表面。又,配線較佳為具有供發光元件搭載之元件搭載部、外部連接用之端子部、將該等連接之引出配線部等。
[實施例的有益效果]
本發明的其中一有益效果在於,本發明所提供的量子點複合材料及其製備方法與LED封裝結構,其能通過“一修飾基團,其配位錨定所述矽化合物包覆層”的技術方案,以提供本發明的量子點複合材料較佳的穩定性以及LED封裝結構的發光效能。
更進一步來說,修飾基團配位錨定矽化合物包覆層,進行反應產生-O-Si-(R)3
鍵結,有效增加量子點複合材料的穩定性,更可維持LED封裝結構的發光效能。
除此之外,本發明量子點複合材料的製備方法,方法簡單、安全、易操作,具有優異的應用前景。再者,藉由“微化步驟:利用噴霧乾燥法微化所述量子點混合物,以得到一量子點複合材料”更能增加量子點複合材料的均勻性。
再者,本發明的LED封裝結構通過此量子點複合材料,可以有效提高LED封裝結構的量子效率,更增加發光效率。
以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的申請專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的申請專利範圍內。
M,M’:量子點複合材料
11:量子點
12:矽化合物包覆層
13:修飾基團
14:修飾材料
20:基板
30:發光元件
圖1A為本發明一實施例的量子點複合材料的示意圖。
圖1B為本發明另一實施例的量子點複合材料的示意圖。
圖2為本發明又一實施例的量子點複合材料的示意圖。
圖3為本發明一量子點複合材料的製作方法的流程圖。
圖4為本發明另一量子點複合材料的製作方法的流程圖。
圖5為本發明一實施例的LED封裝結構的示意圖。
M:量子點複合材料
11:量子點
12:矽化合物包覆層
13:修飾基團
Claims (15)
- 一種量子點複合材料,其包括: 多個量子點; 一矽化合物包覆層,其包覆所述多個量子點;以及 一修飾基團,其配位錨定所述矽化合物包覆層。
- 如請求項1所述的量子點複合材料,其中,所述修飾基團與所述矽化合物包覆層反應形成-O-Si-(R)3 鍵結,得到所述量子點複合材料;其中,R是Cn H2n+1 、n是介於0至5。
- 如請求項1所述的量子點複合材料,進一步包括:一修飾材料,其具有與所述修飾基團相同的官能基,且被包覆於所述矽化合物包覆層中。
- 如請求項3所述的量子點複合材料,其中,所述修飾材料是六甲基二矽氮烷或具有碳數2至碳數5的烷基的疏水性矽氮烷。
- 如請求項1所述的量子點複合材料,其中,所述多個量子點選自於由II-VI族量子點、III-V族量子點及鈣鈦礦量子點。
- 如請求項5所述的量子點複合材料,其中,所述II-VI族量子點是選自CdSe、CdS、CdTe、ZnSe、ZnS、CdTe、ZnTe;CdZnS、CdZnSe、CdZnTe、ZnSeS、ZnSeTe、ZnTeS、CdSeS、CdSeTe、CdTeS、CdZnSeS、CdZnSeTe及CdZnSTe量子點所組成的群組。
- 如請求項5所述的量子點複合材料,其中,所述III-V族量子點是選自InP、InAs、GaP、GaAs、GaSb、AlN、AlP;InAsP;InNP、InNSb、GaAlNP、InAlNP量子點所組成的群組。
- 如請求項5所述的量子點複合材料,其中,所述鈣鈦礦量子點是選自CH3 NH3PbI3 、CH3 NH3 PbCl3 、CH3 NH3PbBr3 、CH3 NH3 PbI2 Cl、CH3 NH3 PbICl2 、CH3 NH3 PbI2 Br、CH3 NH3 PbIBr2 、CH3 NH3 PbIClBr、CsPbI3 、CsPbCl3 、CsPbBr3 、CsPbI2 Cl、CsPbICl2 、CsPbI2 Br、CsPbIBr2 及CsPbIClBr量子點所組成的群組。
- 一種量子點複合材料的製備方法,其包括: 混合步驟:混合多個量子點與一聚矽氮烷,以形成一量子點混合物; 微化步驟:利用噴霧乾燥法微化所述量子點混合物;以及 修飾步驟:混合一修飾材料於所述量子點混合物,以得到一量子點複合材料。
- 如請求項9所述的量子點複合材料的製備方法,其中,所述聚矽氮烷為包覆所述多個量子點的一矽化合物包覆層,且所述修飾材料與所述矽化合物包覆層配位錨定所述矽化合物包覆層。
- 如請求項9所述的量子點複合材料的製備方法,其中,所述修飾材料與所述矽化合物包覆層反應形成-O-Si-(R)3 鍵結,得到所述量子點複合材料;其中,R是Cn H2n+1 、n是介於0至5。
- 如請求項9所述的量子點複合材料的製備方法,其中,所述修飾材料是六甲基二矽氮烷或具有碳數2至碳數5的烷基的疏水性矽氮烷。
- 一種量子點複合材料的製備方法,其包括: 混合步驟:混合多個量子點、一聚矽氮烷與一修飾材料,以形成一量子點混合物;以及 微化步驟:利用噴霧乾燥法微化所述量子點混合物,以得到一量子點複合材料。
- 如請求項13所述的量子點複合材料的製備方法,其中,所述聚矽氮烷形成一矽化合物包覆層包覆所述多個量子點以及部分所述修飾材料的一矽化合物包覆層,且另一部分所述修飾材料與所述矽化合物包覆層配位錨定所述矽化合物包覆層。
- 一種LED封裝結構,其包括: 一基板; 至少一發光元件,設置於所述基板上;以及 一量子點複合材料,覆蓋所述至少一發光元件; 其中,所述量子點複合材料包括:多個量子點、包覆所述多個量子點的一矽化合物包覆層以及配位錨定所述矽化合物包覆層的一修飾基團。
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