CN113943569A - 量子点复合材料及其制备方法与led封装结构 - Google Patents
量子点复合材料及其制备方法与led封装结构 Download PDFInfo
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- CN113943569A CN113943569A CN202110728829.3A CN202110728829A CN113943569A CN 113943569 A CN113943569 A CN 113943569A CN 202110728829 A CN202110728829 A CN 202110728829A CN 113943569 A CN113943569 A CN 113943569A
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- quantum dot
- quantum dots
- dot composite
- silicon compound
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Abstract
本发明公开一种量子点复合材料及其制备方法与LED封装结构。量子点复合材料包括:多个量子点、包覆多个量子点的硅化合物包覆层以及配位锚定硅化合物包覆层的修饰基团。量子点复合材料的制备方法包括:混合步骤、微化步骤以及修饰步骤,通过混合多个量子点与聚硅氮烷,经过喷雾干燥法固化、微化,再经过修饰得到量子点复合材料。LED封装结构包括基板、至少一发光组件以及如前述的量子点复合材料。本发明的量子点复合材料及其制备方法与应用提供本发明的量子点复合材料较佳的稳定性以及LED封装结构的发光效能。
Description
技术领域
本发明涉及一种量子点复合材料及其制备方法与其应用,特别是涉及一种量子点复合材料及其制备方法与应用该量子点复合材料的LED封装结构。
背景技术
近年来,随着显示技术的不断进步,人们对显示器、照明光源的质量要求也越来越高。量子点由于其特有的量子限域效应引起了研究者的广泛关注。相较于传统的有机发光材料,量子点的LED封装结构的发光效能具有半峰宽窄、颗粒小、无散射损失和光谱随尺寸可调控和光化学性能稳定等优势。此外,量子点的光学、电学和传输性能可以通过合成过程得以调整,这些优点使得量子点具有十分重要的作用。
然而,现有技术的量子点材料的制备方法仍面临了难以制备均匀的量子点材料、控制量子点量,且所得到的量子点材料稳定性不佳。
发明内容
本发明所要解决的技术问题在于,针对现有技术的不足提供一种量子点复合材料及其制备方法与LED封装结构。
为了解决上述的技术问题,本发明所采用的其中一技术方案是提供一种量子点复合材料,其包括:多个量子点、包覆所述多个量子点的一硅化合物包覆层以及配位锚定所述硅化合物包覆层的一修饰基团。
优选地,所述量子点复合材料还包括:一修饰材料,其具有与所述修饰基团相同的官能基,且被包覆于所述硅化合物包覆层中。
优选地,所述修饰材料是六甲基二硅氮烷或具有碳数2至碳数5的烷基的疏水性硅氮烷。
优选地,所述多个量子点选自于由II-VI族量子点、III-V族量子点及钙钛矿量子点。
优选地,所述II-VI族量子点是选自CdSe、CdS、CdTe、ZnSe、ZnS、CdTe、ZnTe;CdZnS、CdZnSe、CdZnTe、ZnSeS、ZnSeTe、ZnTeS、CdSeS、CdSeTe、CdTeS、CdZnSeS、CdZnSeTe及CdZnSTe量子点所组成的群组。
优选地,所述III-V族量子点是选自InP、InAs、GaP、GaAs、GaSb、AlN、AlP;InAsP;InNP、InNSb、GaAlNP、InAlNP量子点所组成的群组。
优选地,述钙钛矿量子点是选自CH3NH3PbI3、CH3NH3PbCl3、CH3NH3PbBr3、CH3NH3PbI2Cl、CH3NH3PbICl2、CH3NH3PbI2Br、CH3NH3PbIBr2、CH3NH3PbIClBr、CsPbI3、CsPbCl3、CsPbBr3、CsPbI2Cl、CsPbICl2、CsPbI2Br、CsPbIBr2及CsPbIClBr量子点所组成的群组。
为了解决上述的技术问题,本发明所采用的另外一技术方案是提供一种量子点复合材料的制备方法,包括:混合步骤、微化步骤以及修饰步骤。具体来说,混合步骤混合多个量子点与一聚硅氮烷,以形成一量子点混合物,进一步利用微化步骤利用喷雾干燥法微化所述量子点混合物,最后通过修饰步骤混合一修饰材料于所述量子点混合物,以得到一量子点复合材料。
优选地,所述聚硅氮烷为包覆所述多个量子点的一硅化合物包覆层,且所述修饰材料与所述硅化合物包覆层配位锚定所述硅化合物包覆层。
优选地,所述修饰材料与所述硅化合物包覆层反应形成-O-Si-(R)3键结,得到所述量子点复合材料;其中,R是CnH2n+1、n是介于0至5。
优选地,所述修饰材料是六甲基二硅氮烷或具有碳数2至碳数5的烷基的疏水性硅氮烷。
为了解决上述的技术问题,本发明所采用的另外再一技术方案是提供一种量子点复合材料的制备方法,包括:混合步骤以及微化步骤。具体来说,混合步骤混合多个量子点与一聚硅氮烷与一修饰材料,以形成一量子点混合物,进一步利用喷雾干燥法微化所述量子点混合物,以得到一量子点复合材料。
优选地,所述聚硅氮烷形成一硅化合物包覆层包覆所述多个量子点以及部分所述修饰材料的一硅化合物包覆层,且另一部分所述修饰材料与所述硅化合物包覆层配位锚定所述硅化合物包覆层。
为了解决上述的技术问题,本发明所采用的另一技术方案是提供一种LED封装结构,其包括:一基板;至少一发光组件,设置于所述基板上;以及一量子点复合材料,覆盖所述至少一发光组件;其中,所述量子点复合材料包括:多个量子点、包覆所述多个量子点的一硅化合物包覆层以及配位锚定所述硅化合物包覆层的一修饰基团。
本发明的其中一有益效果在于,本发明所提供的量子点复合材料及其制备方法与LED封装结构,其能通过“一修饰基团,其配位锚定所述硅化合物包覆层”的技术方案,以提供本发明的量子点复合材料较佳的稳定性以及LED封装结构的发光效能。
为使能更进一步了解本发明的特征及技术内容,请参阅以下有关本发明的详细说明,然而所提供的内容仅用于提供参考与说明,并非用来对本发明加以限制。
附图说明
图1A为本发明一实施例的量子点复合材料的示意图。
图1B为本发明另一实施例的量子点复合材料的示意图。
图2为本发明又一实施例的量子点复合材料的示意图。
图3为本发明一量子点复合材料的制作方法的流程图。
图4为本发明另一量子点复合材料的制作方法的流程图。
图5为本发明一实施例的LED封装结构的示意图。
具体实施方式
以下是通过特定的具体实施例来说明本发明所公开有关“量子点复合材料及其制备方法与LED封装结构”的实施方式,本领域技术人员可由本说明书所公开的内容了解本发明的优点与效果。本发明可通过其他不同的具体实施例加以施行或应用,本说明书中的各项细节也可基于不同观点与应用,在不背离本发明的构思下进行各种修改与变更。另外,本发明的附图仅为简单示意说明,并非依实际尺寸的描绘,事先声明。以下的实施方式将进一步详细说明本发明的相关技术内容,但所公开的内容并非用以限制本发明的保护范围。另外,本文中所使用的术语“或”,应视实际情况可能包括相关联的列出项目中的任一个或者多个的组合。
参阅图1A至图1B所示,本发明提供一种量子点复合材料,其包括:多个量子点11、包覆所述多个量子点11的硅化合物包覆层12以及配位锚定硅化合物包覆层12的修饰基团13。
具体来说,本发明所使用的多个量子点选自于由II-VI族量子点、III-V族量子点及钙钛矿量子点。较佳地,本发明的多个量子点可以是钙钛矿量子点。然而,本发明不以上述所举的例子为限。
举例来说,II-VI族量子点是选自CdSe、CdS、CdTe、ZnSe、ZnS、CdTe、ZnTe;CdZnS、CdZnSe、CdZnTe、ZnSeS、ZnSeTe、ZnTeS、CdSeS、CdSeTe、CdTeS、CdZnSeS、CdZnSeTe及CdZnSTe量子点所组成的群组。
举例来说,III-V族量子点是选自InP、InAs、GaP、GaAs、GaSb、AlN、AlP;InAsP;InNP、InNSb、GaAlNP、InAlNP量子点所组成的群组。
举例来说,钙钛矿量子点是选自CH3NH3PbI3、CH3NH3PbCl3、CH3NH3PbBr3、CH3NH3PbI2Cl、CH3NH3PbICl2、CH3NH3PbI2Br、CH3NH3PbIBr2、CH3NH3PbIClBr、CsPbI3、CsPbCl3、CsPbBr3、CsPbI2Cl、CsPbICl2、CsPbI2Br、CsPbIBr2及CsPbIClBr量子点所组成的群组。
更详细来说,修饰基团13与硅化合物包覆层12反应形成-O-Si-(R)3键结,其中,R是CnH2n+1、n是介于0至5。进一步来说,修饰基团是来自于一修饰材料与硅化合物包覆层12的氧键结,举例来说,修饰材料可以是六甲基二硅氮烷或具有碳数2至碳数5的烷基的疏水性硅氮烷。
参阅图1B,其为修饰材料是六甲基二硅氮烷(HDMS)的示意图,六甲基二硅氮烷与硅化合物包覆层12产生化学反应,如以下反应式:
2SiOH+[(CH3)3Si]2NH→2SiO[Si(CH3)3]2+NH3。
然而,上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
参阅图2,本发明另提供一种量子点复合材料,进一步包括:一修饰材料14。换句话说,如图2所示,其包括多个量子点11、硅化合物包覆层12以及修饰基团13,以及被包覆于硅化合物包覆层12的修饰材料14。也就是说,部分修饰材料14与硅化合物包覆层12形成修饰基团13的键结,部分未与硅化合物包覆层12形成键结的修饰材料14也被包覆在硅化合物包覆层12之中。
较佳地,本发明的量子点复合材料的粒径大小介于50奈米(nm)至5微米(μm)之间。
参阅图3,本发明所采用的另外一技术方案是提供一种量子点复合材料的制备方法,包括:混合步骤S100、微化步骤S102以及修饰步骤S104。具体来说,混合步骤S100混合多个量子点与聚硅氮烷,以形成一量子点混合物,进一步地,利用微化步骤S102通过喷雾干燥法微化量子点混合物,最后通过由修饰步骤S104混合一修饰材料于所述量子点混合物,以得到一量子点复合材料。
详细来说,相对于量子点复合材料总质量的含有比例没有特别限定,优选地,多个量子点相对于组合物总量的含有比例通常为0.01至10wt%。在此范围,可提供较佳的聚集特性,以及维持良好发旋光性。再者,每一多个量子点的平均粒径没有特别限定,优选地,可以是1nm至50nm以下,可维持较佳的晶体结构。
视需求地,可进一步添加溶剂,作为使多个量子点分散的介质。举例而言,如甲酸甲酯、甲酸乙酯、甲酸丙酯、甲酸戊酯、乙酸甲酯、乙酸乙酯、乙酸戊酯等酯;γ-丁内酯、N-甲基-2-吡咯烷酮、丙酮、二甲基酮、二异丁基酮、环戊酮、环己酮、甲基环己酮等酮;二乙基醚、甲基叔丁基醚、二异丙基醚、二甲氧基甲烷、二甲氧基乙烷、1,4-二恶烷、1,3-二氧戊环、4-甲基二氧戊环、四氢呋喃、甲基四氢呋喃、茴香醚、苯乙醚等醚;甲醇、乙醇、1-丙醇、2-丙醇、1-丁醇、2-丁醇、叔丁醇、1-戊醇、2-甲基-2-丁醇、甲氧基丙醇、二丙酮醇、环己醇、2-氟乙醇、2,2,2-三氟乙醇、2,2,3,3-四氟-1-丙醇等醇;乙二醇单甲基醚、乙二醇单乙基醚、乙二醇单丁基醚、乙二醇单乙基醚乙酸酯、三乙二醇二甲基醚等二醇醚;N,N-二甲基甲酰胺、乙酰胺、N,N-二甲基乙酰胺等具有酰胺基的有机溶剂;乙腈、异丁腈、丙腈、甲氧基乙腈等具有腈基的有机溶剂;碳酸乙烯酯、碳酸丙烯酯等具有碳酸酯基的有机溶剂;二氯甲烷、氯仿等具有卤代烃基的有机溶剂;正戊烷、环己烷、正己烷、苯、甲苯、二甲苯等具有烃基的有机溶剂;二甲基亚砜等。
进一步地,聚硅氮烷用以提供硅源以形成氧化硅、氮化硅或氮氧化硅的硅化合物包覆层包覆多个量子点,较佳地,聚硅氮烷和量子点的重量比例为10:1至1000:1,从而得到包覆厚度介于10nm至10μm的硅化合物包覆层。而聚硅氮烷分子式通式:-[R1R2Si-NR3]-,其中,R1、R2、R3分别独立地表示氢原子、烷基、烯基、环烷基、芳基、烷基甲硅烷基、烷基氨基或烷氧基,较佳地,本发明所使用的聚硅氮烷是分子量介于200至3000。当R1、R2、R3均为氢原子时,聚硅氮烷分子式为-[H2Si-NH]n-,称为全氢聚硅氮烷(PHPS),亦称无机聚硅氮烷。如果聚硅氮烷键结有机团簇,则称为有机聚硅氮烷。较佳地,聚硅氮烷可以是全氢聚硅氮烷(PHPS),提供较佳的折射率。
微化步骤S102利用喷雾干燥法在设定为150℃至500℃的入口温度下,采用选自空气、惰性气体(例如氩气)或氮气的载气通过喷雾干燥从分散体中除去液体介质,以固化成为硅化合物包覆量子点的量子点微球。载气优选氮气,压力可为0.20MPa至0.50MPa。喷嘴速度可为每小时500ml至3000ml,或者1000ml/小时至2000ml/小时,或者约1760ml/小时。
较佳地,通过喷雾干燥法所制造二氧化硅包覆量子点微球,依溶液配方比例与喷雾干燥法设定条件的不同,微球平均粒径介于10nm至10μm。
修饰步骤S104混合修饰材料于量子点混合物,修饰材料可以是六甲基二硅氮烷或具有碳数2至碳数5的烷基的疏水性硅氮烷,举例而言,如四甲基二硅氮烷(Tetramethyldisilazane)、六乙基二硅氮烷(Hexarthyl disilazane)等。
修饰材料与量子点混合物混合,使得修饰基团配位锚定硅化合物包覆层,反应产生-O-Si-(R)3键结,其中,R是CnH2n+1、n是介于0至5。
参阅图4,本发明另外再一技术方案是提供一种量子点复合材料的制备方法,包括:混合步骤S200以及微化步骤S202。具体来说,混合步骤S200混合多个量子点与聚硅氮烷与修饰材料,以形成量子点混合物,接着微化步骤S202通过喷雾干燥法微化量子点混合物,以得到量子点复合材料。
更详细来说,相较于图3,此制备方法于混合步骤S200时添加修饰材料,以形成多个量子点11、硅化合物包覆层12以及修饰基团13,以及被包覆于硅化合物包覆层12的修饰材料14。也就是说,部分修饰材料14与硅化合物包覆层12形成修饰基团13的键结,部分未与硅化合物包覆层12形成键结的修饰材料14也被包覆在硅化合物包覆层12之中。
微化步骤S202如前述内容,不再多做赘述。
参阅图5,本发明所采用的另一技术方案是提供一种LED封装结构,其包括:基板20、至少一发光组件30以及量子点复合材料M。至少一发光组件30设置于基板20的一表面上,量子点复合材料M覆盖至少一发光组件30。
较佳地,量子点复合材料M覆盖至少一发光组件30相对于基板20的表面以及侧面,量子点复合材料M的详细材料与配置已详述于上述段落中,于此便不再赘述。
至少一发光组件30,例如可列举发光二极管(LED,Light Emitting Diode)芯片。LED封装结构至少搭载一个发光组件,亦可为复数个,且多个发光组件可串联连接或并联连接。
视需求,进一步包括配线形成于基体之至少上表面,亦可形成于基体之内部及/或侧面及/或下表面。又,配线较佳为具有供发光组件搭载之组件搭载部、外部连接用之端子部、将该等连接之引出配线部等。
[实施例的有益效果]
本发明的其中一有益效果在于,本发明所提供的量子点复合材料及其制备方法与LED封装结构,其能通过“一修饰基团,其配位锚定所述硅化合物包覆层”的技术方案,以提供本发明的量子点复合材料较佳的稳定性以及LED封装结构的发光效能。
更进一步来说,修饰基团配位锚定硅化合物包覆层,进行反应产生-O-Si-(R)3键结,有效增加量子点复合材料的稳定性,更可维持LED封装结构的发光效能。
除此之外,本发明量子点复合材料的制备方法,方法简单、安全、易操作,具有优异的应用前景。再者,通过“微化步骤:利用喷雾干燥法微化所述量子点混合物,以得到一量子点复合材料”更能增加量子点复合材料的均匀性。
再者,本发明的LED封装结构通过此量子点复合材料,可以有效提高LED封装结构的量子效率,更增加发光效率。
以上所公开的内容仅为本发明的优选可行实施例,并非因此局限本发明的权利要求书的保护范围,所以凡是运用本发明说明书及附图内容所做的等效技术变化,均包含于本发明的权利要求书的保护范围内。
Claims (11)
1.一种量子点复合材料,其特征在于,所述量子点复合材料包括:
多个量子点;
一硅化合物包覆层,其是由聚硅氮烷形成,并包覆所述多个量子点;以及
一修饰基团,其配位锚定所述硅化合物包覆层形成-O-Si-(R)3键结,其中,R是CnH2n+1、n是介于0至5;
其中,所述多个量子点不会彼此完全不接触。
2.根据权利要求1所述的量子点复合材料,其特征在于,所述量子点复合材料还包括:一修饰材料,其具有与所述修饰基团相同的官能基,且被包覆于所述硅化合物包覆层中。
3.根据权利要求2所述的量子点复合材料,其特征在于,所述修饰材料是六甲基二硅氮烷或具有碳数2至碳数5的烷基的疏水性硅氮烷。
4.根据权利要求1所述的量子点复合材料,其特征在于,所述多个量子点选自于由II-VI族量子点、III-V族量子点及钙钛矿量子点。
5.根据权利要求4所述的量子点复合材料,其特征在于,所述II-VI族量子点是选自CdSe、CdS、CdTe、ZnSe、ZnS、CdTe、ZnTe;CdZnS、CdZnSe、CdZnTe、ZnSeS、ZnSeTe、ZnTeS、CdSeS、CdSeTe、CdTeS、CdZnSeS、CdZnSeTe及CdZnSTe量子点所组成的群组。
6.根据权利要求4所述的量子点复合材料,其特征在于,所述III-V族量子点是选自InP、InAs、GaP、GaAs、GaSb、AlN、AlP;InAsP;InNP、InNSb、GaAlNP、InAlNP量子点所组成的群组。
7.根据权利要求4所述的量子点复合材料,其特征在于,述钙钛矿量子点是选自CH3NH3PbI3、CH3NH3PbCl3、CH3NH3PbBr3、CH3NH3PbI2Cl、CH3NH3PbICl2、CH3NH3PbI2Br、CH3NH3PbIBr2、CH3NH3PbIClBr、CsPbI3、CsPbCl3、CsPbBr3、CsPbI2Cl、CsPbICl2、CsPbI2Br、CsPbIBr2及CsPbIClBr量子点所组成的群组。
8.一种量子点复合材料的制备方法,其特征在于,所述量子点复合材料的制备方法包括:
混合步骤:混合多个量子点与一聚硅氮烷,以形成一量子点混合物,所述聚硅氮烷形成包覆所述多个量子点的一硅化合物包覆层;
微化步骤:利用喷雾干燥法微化所述量子点混合物;以及
修饰步骤:混合一修饰材料于所述量子点混合物,所述修饰材料与所述硅化合物包覆层配位锚定所述硅化合物包覆层,以得到一量子点复合材料;
其中,所述修饰材料是六甲基二硅氮烷或具有碳数2至碳数5的烷基的疏水性硅氮烷;
其中,所述多个量子点不会彼此完全不接触。
9.根据权利要求8所述的量子点复合材料的制备方法,其特征在于,所述修饰材料与所述硅化合物包覆层反应形成-O-Si-(R)3键结,得到所述量子点复合材料;其中,R是CnH2n+1、n是介于0至5。
10.一种量子点复合材料的制备方法,其特征在于,所述量子点复合材料的制备方法包括:
混合步骤:混合多个量子点、一聚硅氮烷与一修饰材料,以形成一量子点混合物,所述聚硅氮烷形成一硅化合物包覆层包覆所述多个量子点以及一部分所述修饰材料,且另一部分所述修饰材料与所述硅化合物包覆层配位锚定所述硅化合物包覆层;以及
微化步骤:利用喷雾干燥法微化所述量子点混合物,以得到一量子点复合材料;
其中,所述修饰材料是六甲基二硅氮烷或具有碳数2至碳数5的烷基的疏水性硅氮烷;
其中,所述多个量子点不会彼此完全不接触。
11.一种LED封装结构,其特征在于,所述LED封装结构包括:
一基板;
至少一发光组件,设置于所述基板上;以及
一量子点复合材料,覆盖所述至少一发光组件;
其中,所述量子点复合材料包括:多个量子点、包覆所述多个量子点的一硅化合物包覆层以及一修饰基团;
其中,所述硅化合物包覆层是由聚硅氮烷形成;
其中,所述修饰基团配位锚定所述硅化合物包覆层形成-O-Si-(R)3键结,其中,R是CnH2n+1、n是介于0至5;
其中,所述多个量子点不会彼此完全不接触。
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