TW202203397A - 包括基板、整合元件和具有底切的包封層的封裝 - Google Patents

包括基板、整合元件和具有底切的包封層的封裝 Download PDF

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TW202203397A
TW202203397A TW110114358A TW110114358A TW202203397A TW 202203397 A TW202203397 A TW 202203397A TW 110114358 A TW110114358 A TW 110114358A TW 110114358 A TW110114358 A TW 110114358A TW 202203397 A TW202203397 A TW 202203397A
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Taiwan
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substrate
encapsulation layer
integrated
encapsulation
package
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TW110114358A
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亞伯特荷西 特謝拉德凱洛斯
安德爾斯 法蘭茲
安娜凱瑟琳娜 克里芙特
克勞斯 瑞特林格
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美商高通公司
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Abstract

一種封裝包括基板、整合元件、第一包封層和空隙。該基板包括第一表面。該整合元件耦合至該基板的第一表面。第一包封層位於基板的第一表面和整合元件之上。第一包封層包括相對於整合元件的側表面的底切。空隙位於整合元件與基板的第一表面之間。空隙被包封層的底切橫向圍繞。

Description

包括基板、整合元件和具有底切的包封層的封裝
本專利申請案主張於2020年10月8日向美國專利商標局提出申請的待決非臨時申請案第17/066,049號以及於2020年5月29日提出申請的美國臨時申請案第63/032,177號的優先權和權益。
各種特徵係關於包括基板和整合元件的封裝，尤其係關於包括基板、整合元件和包封層的封裝。
圖1圖示了包括基板102和整合元件104的封裝100。整合元件104經由複數個焊料互連140被耦合至基板102的第一表面。基板102包括至少一個介電層120、複數個互連121、第一阻焊層124和第二阻焊層126。複數個焊料互連130被耦合至基板102的第二表面。封裝100亦包括包封整合元件104的包封層160。形成包封層160的程序可致使至少一部分包封層160流到整合元件104下方，並且形成在整合元件104與基板102之間。對於某些類型的整合元件，在整合元件104與基板102之間具有包封層160可能限制及/或損害整合元件104及/或封裝100的效能。
存在改良封裝和位於封裝中的整合元件的效能的持續需求。
各種特徵係關於包括基板和整合元件的封裝，尤其係關於包括基板、整合元件和包封層的封裝。
一個實例提供了一種封裝，包括：基板、整合元件、第一包封層和空隙。該基板包括第一表面。該整合元件耦合至該基板的第一表面。第一包封層位於該基板的第一表面和該整合元件之上。第一包封層包括相對於該整合元件的側表面的底切。該空隙位於該整合元件與該基板的第一表面之間。該空隙被包封層的底切橫向圍繞。
另一實例提供了一種裝置，包括：基板、整合元件、用於第一包封的構件，以及空隙。該基板包括第一表面。該整合元件耦合至該基板的第一表面。用於第一包封的構件位於該基板的第一表面和該整合元件之上。用於第一包封的構件包括相對於該整合元件的側表面的底切。該空隙位於該整合元件與該基板的第一表面之間。該空隙被用於第一包封的構件的底切橫向圍繞。
另一實例提供了一種用於製造封裝的方法。該方法提供包括第一表面的基板。該方法將整合元件耦合至該基板的第一表面。該方法在該基板的第一表面和該整合元件之上形成第一包封層。第一包封層包括相對於該整合元件的側表面的底切。形成第一包封層形成位於該整合元件與該基板的第一表面之間的空隙，其中該空隙被第一包封層的底切橫向圍繞。
在以下描述中，提供了具體細節以提供對本案的各個態樣的透徹理解。然而，一般技術者將理解，沒有該等具體細節亦可以實踐該等態樣。例如，電路可能用方塊圖圖示以避免使該等態樣湮沒在不必要的細節中。在其他例子中，公知的電路、結構和技術可能不被詳細圖示以免湮沒本案的該等態樣。
本案提供了一種封裝，包括：基板、整合元件、第一包封層和空隙。該基板包括第一表面。該整合元件耦合至該基板的第一表面。第一包封層位於該基板的第一表面和該整合元件之上。第一包封層包括相對於該整合元件的側表面的底切。第一包封層在該整合元件的頂表面和該側表面上可具有均勻厚度。該空隙位於該整合元件與該基板的第一表面之間。該空隙被第一包封層的底切橫向圍繞。第二包封層可被形成在且位於第一包封層之上。該封裝在該整合元件與第一包封層之間可以沒有箔（例如，黏箔、膠箔）及/或密封膜，此情形有助於降低該封裝的製造成本。第一包封層和第二包封層的使用可以有助於向封裝提供具有受控底切的包封層，此舉允許對整合元件與基板之間的空隙的更準確且更精準的控制。該整合元件可以被配置為濾波器。此外，用於基板和包封層的材料可以被選擇成使得基板與封裝剩餘部分之間的熱膨脹係數（CTE）失配被最小化，藉此提供更穩健且可靠的封裝。 包括基板、整合元件和具有受控底切的包封層的示例性封裝
圖2圖示了封裝200的剖視圖，封裝200包括基板202、整合元件204、整合元件206、包封層207、包封層209和電磁干擾（EMI）遮罩件250。在一些實現中，封裝200可以是積體電路（IC）封裝，諸如系統級封裝（SiP）或晶片級封裝（CSP）。在一些實現中，封裝200可以被配置為包括射頻（RF）濾波器的射頻前端（RFFE）封裝。
基板202包括至少一個介電層220、複數個互連221（例如，跡線、焊盤、通孔）、阻焊層224和阻焊層226。阻焊層224可被形成在且位於至少一個介電層220的第一表面之上。阻焊層226可被形成在且位於至少一個介電層220的第二表面之上。基板202可以是無芯基板、層壓基板，或包括芯層的基板。至少一個介電層220可包括不同材料，諸如預浸料層、聚醯亞胺（例如，光可蝕刻介電層）、有機層及/或陶瓷。複數個焊料互連230經由基板202的第二表面（例如，底表面）被耦合至複數個互連221。
整合元件204經由複數個焊料互連240被耦合至基板202的第一表面（例如，頂表面）。空隙242位於整合元件204與基板202的第一表面之間。整合元件206經由複數個焊料互連260被耦合至基板202的第一表面（例如，頂表面）。空隙262位於整合元件206與基板202的第一表面之間。空隙（例如，242、262）可以是沒有固體材料的至少一個區域。空隙可包括腔。空隙可被氣體（例如，空氣）佔據。
整合元件（例如，204、206）可以包括晶粒（例如，半導體裸晶粒）。整合元件可包括：射頻（RF）元件、被動元件、濾波器、電容器、電感器、天線、傳輸器、接收器、面聲波（SAW）濾波器、體聲波（BAW）濾波器、發光二極體（LED）整合元件、基於碳化矽（SiC）的整合元件、基於GaAs的整合元件、基於GaN的整合元件、處理器、記憶體及/或其組合。整合元件（例如，204、206）可包括至少一個電子電路（例如，第一電子電路、第二電子電路等）。
例如，當整合元件（例如，204、206）被配置為半導體積體電路晶粒時，該整合元件可包括基板和元件層，該元件層包括被配置成執行運算（例如，邏輯運算）的電晶體。在另一實例中，當整合元件（例如，204、206）被配置為裸晶粒濾波器（例如，SAW濾波器、BAW濾波器）時，該整合元件可包括壓電基板和形成在且位於該壓電基板之上的至少一個金屬層，該至少一個金屬層被配置為至少一個換能器（例如，叉指式換能器（IDT））。裸晶粒濾波器的實例在至少圖11、圖12、圖16A-圖16B和圖17A-圖17B中進一步圖示且在下文描述。當整合元件被配置為濾波器時，該整合元件與基板之間的空隙可以有助於改良被配置為濾波器的該整合元件的效能。
圖2圖示了包封層207被耦合至、被形成在且位於基板202的第一表面、整合元件204，以及整合元件206之上，以使得（i）空隙242位於整合元件204與基板202之間，以及（ii）空隙262位於整合元件206與基板202之間。圖2圖示了包封層207具有對於整合元件的側壁或側表面的中立底切。包封層的底切描述了（及/或量化了）包封層（或包封層的一部分）相對於元件（例如，整合元件）底部的空隙以及相對於另一基準點（例如，與整合元件的側壁或側表面對準的豎直線）的位置。包封層的底切可以描述及/或量化包封層在整合元件底部的空隙中有多遠或者包封層距離整合元件底部的空隙有多遠。中立底切可以意味著包封層207可以與位於空隙之上的整合元件（例如，204、206）的側壁或側表面豎直對準。然而，如下文在至少圖3和圖4中進一步描述的，包封層207可具有對於整合元件的正底切或負底切。包封層的底切值的範圍可以在約-20微米（µm）到50微米（µm）之間。負底切值可以意味著包封層位於遠離整合元件且遠離從整合元件的側表面或側壁豎直延伸的假想線（或基準）。正底切值可以意味著包封層位於整合元件下方、朝向整合元件下方的空隙、並且遠離從位於空隙之上的整合元件的側表面或側壁豎直延伸的假想線。然而，正底切和負底切可以被不同地定義。底切的值可以表示最大底切值（例如，包封層的最遠部分距離假想線（或基準）有多遠）。對於具有多個側面的整合元件，可能針對該整合元件的每一側面存在對應的底切。亦即，包封層可具有針對整合元件的每一側面的底切值。針對整合元件的每一側面的底切值可以不同或相同。在一些實現中，可能存在針對整合元件的至少一個側面的可變的底切值。
如圖2所示，相應整合元件下方的每一空隙被包封層207中由該相應整合元件限定的相應底切橫向圍繞。例如，空隙242被包封層207中由整合元件204的側表面限定的至少一個底切橫向圍繞。類似地，空隙262被包封層207中由整合元件206的側表面限定的至少一個底切橫向圍繞。
本案描述了在位於整合元件與基板之間的至少一個空隙附近具有精確且精準控制的包封層底切的一種封裝，此舉可導致整合元件及/或封裝的更佳效能，因為整合元件與基板之間的區域未被包封層阻擋。
包封層207可以是第一包封層（例如，用於第一包封的構件）。包封層207可包括模塑、樹脂及/或環氧樹脂。包封層207可包括各向同性材料及/或各向異性材料。如下文將進一步描述的，片狀模塑製程（例如，真空層壓、壓縮模塑）可被用於形成包封層207。
包封層207被形成在基板202、整合元件204和整合元件206之上，以使得包封層207具有大致均勻的厚度，因為包封層207大致遵循基板202、整合元件204及/或整合元件206的輪廓。第一包封層207可在整合元件204的頂表面及/或側表面上具有均勻厚度，及/或可在整合元件206的頂表面及/或側表面上具有均勻厚度。在一些實現中，第一包封層207在整合元件204及/或207的側表面上具有的厚度可以比在整合元件204及/或207的頂表面上具有的厚度更薄。注意到，均勻厚度並不必要意味著包封層在任何位置處均具有完全相同的厚度。本案中所使用的均勻厚度意思是元件（例如，包封層）的厚度在某一容限內大致相同。例如，均勻厚度可以意味著在該材料的平均厚度的某一百分比內厚度是相同的。例如，若包封層207具有平均厚度（Tavg），則假如在包封層207的任何部分處的厚度在包封層207的平均厚度（Tavg）的10%或更低（例如，5%或更低）之內則包封層207可以被認為具有均勻厚度。在另一實例中，當元件（例如，包封層）的最厚部分與該元件（例如，包封層）的最薄部分之差為16微米（µm）或更少時，該元件（例如，包封層）可具有均勻厚度。在一些實現中，包封層207可具有約80微米（µm）±8微米（µm）的厚度。然而，不同實現可使用具有不同均勻厚度的包封層207。包封層207的均勻厚度可適用於包封層207中接觸元件（例如，整合元件、基板）表面的彼等部分。在一些實現中，包封層207的均勻性可能不適用於包封層207中毗鄰空隙的彼等部分。片狀模塑製程可允許對在位於空隙之上的整合元件附近的包封層207底切的精確且精準的控制，此舉進而允許對整合元件與基板之間的空隙（例如，242、262）的精確且精準的控制。
包封層207可以在無需遵循基板202、整合元件204和整合元件206的輪廓的箔及/或密封膜的情況下被提供和形成。此舉可以經由使用具有低黏度值的包封層207片狀模塑來完成，以使得包封層207基本上不會流到（諸）整合元件下方。例如，對於在60°C–140°C之間的溫度範圍，包封層207的黏度值可以在0.01-100 mPa•s（毫帕秒）之間。因而，圖2以及本案中的其他附圖圖示了一種在包封層207與基板202、整合元件204和整合元件206之間沒有密封膜的封裝。無箔封裝或無密封膜封裝的一個優點在於由於要求至少少了一個步驟且至少少了一種材料的事實導致此種封裝製造起來更便宜。
包封層209被耦合至、被形成在且位於包封層207之上。包封層209可以是第二包封層（例如，用於第二包封的構件）。包封層209可包括模塑、樹脂及/或環氧樹脂。包封層209可包括各向同性材料及/或各向異性材料。包封層209可包括與包封層207不同的材料。包封層209可具有與包封層207不同的至少一個屬性。例如，包封層209可具有與包封層207不同的熱膨脹係數（CTE）。在一些實現中，包封層209可具有高於/大於包封層207的CTE（例如，百萬分之10（ppm））的CTE（例如，33 ppm）。在一些實現中，包封層209可具有小於/低於包封層207的CTE的CTE。壓縮模塑製程、傳遞模塑製程，或液態模塑製程可被用來形成包封層209。包封層209可以是光可蝕刻的。在包封層209與包封層207之間可存在邊界介面。此外，除了模塑製程，包封層209可以與包封層207層壓在一起以建立單個片。包括包封層207和包封層209的該單個片可以經由真空層壓或壓縮模塑被應用到基板202、整合元件204和整合元件206。
EMI遮罩件250可以被耦合至、被形成在且位於包封層209和基板202的側部分之上。EMI遮罩件250可包括導電層。EMI遮罩件250可被配置成被耦合至接地。例如，EMI遮罩件250可被配置成電耦合至接地互連（例如，來自基板202的接地互連）。EMI遮罩件250可以是用於電磁干擾（EMI）遮罩的構件。
為了增加和提高封裝200（或本案中描述的任何封裝）的可靠性，封裝200的各個元件的設計可以被選擇為使得基板202與封裝200剩餘部分之間的最大CTE失配為每開爾文百萬分之15（ppm/K）或更小。例如，基板202的有效CTE（例如，基板CTE）與整合元件（例如，204、206）、耦合整合元件的焊料互連（例如，240、260）、包封層207、包封層209及/或EMI遮罩件250的有效且集體CTE之間的最大差可以約為15 ppm/K或更小。因而，基板202可具有在封裝200剩餘部分的有效CTE的15 ppm/K之內的基板CTE。基板202的基板CTE可以表示至少一個介電層220、複數個互連221、阻焊層224及/或阻焊層226的有效且集體CTE。在一些實現中，基板202的基板CTE可以在約每開爾文百萬分之5-20（ppm/K）的範圍之中。
圖3圖示了封裝300，封裝300包括包含正底切和負底切的包封層。封裝300與圖2的封裝200相似，並且包括與封裝200相似或相同的元件。圖3圖示了包封層207包括正底切304和負底切306。圖4圖示了封裝300的特寫圖。如圖4所示，包封層207可以被形成為使得包封層207相對於整合元件204和空隙242具有正底切304並且相對於整合元件206和空隙262具有負底切。然而，注意，包封層207可具有對於整合元件的正底切、中立底切，及/或負底切。例如，包封層207可具有對於整合元件一側的正底切，並且可具有對於該整合元件的另一側的負底切。在一些實現中，包封層207可具有對於整合元件的可變底切。在一些實現中，包封層207的一側可具有正底切、中立底切及/或負底切。如上所提及的，包封層207中靠近位於空隙之上的整合元件的底切值可以在-20–50微米（µm）的範圍內（例如，在負20 µm到正50 µm之間的範圍內）。因而，包封層207對於至少一個整合元件（例如，204、206）可具有負底切、中立底切、正底切或其組合。底切的值可以表示最大底切值（例如，包封層的最遠部分距離假想線有多遠）。包封層207的至少一部分可具有均勻厚度，如圖2中所述。
圖5圖示了包括具有各種底切的包封層的封裝500。封裝500與圖3的封裝300相似，並且包括與封裝300相似或相同的元件。封裝500亦包括整合元件506、包封層509和複數個焊料互連560。整合元件506經由複數個焊料互連560被耦合至基板202的第二表面（例如，底表面）。包封層509位於基板202的第二表面之上且耦合至基板202的第二表面。包封層509包封整合元件506和複數個焊料互連230的部分。包封層509可類似於包封層207及/或包封層209。包封層509可以是第三包封層（例如，用於第三包封的構件）。包封層509可包括模塑、樹脂及/或環氧樹脂。壓縮模塑製程、傳遞模塑製程，或液態模塑製程可被用來形成包封層509。包封層509可以是光可蝕刻的。
整合元件506、包封層509、複數個焊料互連560和複數個焊料互連230的有效集體CTE可以被選擇成使得與基板202的最大CTE失配是15 ppm/K或更小。包封層207的至少一部分可具有均勻厚度，如圖2中所述。
圖6圖示了包括包含各種底切的包封層的封裝600。封裝600與圖5的封裝500相似，並且包括與封裝500相似或相同的元件。封裝600亦包括整合元件606、空隙662和包括腔的基板202。空隙662位於整合元件206與基板202之間。空隙662可包括位於基板202中的腔。整合元件606位於基板202的腔內。整合元件606經由複數個焊料互連660被耦合至基板202。整合元件606的背側面向整合元件206的正面。與本案中的其他封裝類似，包封層207對於位於空隙之上的各個整合元件可具有在-20–50微米（µm）範圍中的底切值。包封層207針對空隙之上的整合元件（例如，204、206）的底切值可以是可變的。包封層207的至少一部分可具有均勻厚度，如圖2中所述。
圖7圖示了包括包含各種底切的包封層的封裝700。封裝700與圖6的封裝600相似，並且包括與封裝600相似或相同的元件。封裝700包括整合元件706、整合元件606、空隙662和包括腔的基板202。整合元件706位於空隙662中。整合元件706被耦合至整合元件206（例如，以正面對正面的配置）。整合元件606的背側面向整合元件706的背側。與本案中的其他封裝類似，包封層207對於位於空隙之上的各個整合元件可具有在-20–50微米（µm）範圍中的底切值。包封層207針對整合元件的底切值可以是可變的。包封層207的至少一部分可具有均勻厚度，如圖2中所述。
圖8圖示了包括包含各種底切的包封層的封裝800。封裝800與圖6的封裝600相似，並且包括與封裝600相似或相同的元件。封裝800包括被動元件806、空隙662和包括腔的基板202。空隙662位於整合元件206與基板202之間。空隙662可包括位於基板202中的腔。被動元件806位於基板202的腔內。被動元件806經由複數個焊料互連660被耦合至基板202。被動元件806可以是電容器（例如，表面安裝電容器）。與本案中的其他封裝類似，包封層207對於位於空隙之上的各個整合元件可具有在-20–50微米（µm）範圍中的底切值。包封層207針對整合元件的底切值可以是可變的。包封層207的至少一部分可具有均勻厚度，如圖2中所述。
圖9圖示了包括包含各種底切的包封層的封裝900。封裝900與圖6的封裝600相似，並且包括與封裝600相似或相同的元件。封裝900包括整合元件906、整合元件606、空隙662和包括腔的基板202。整合元件906位於空隙662中。整合元件906經由複數個焊料互連960被耦合至整合元件606（例如，以正反相對的配置）。整合元件906的背側面向整合元件206的正面。與本案中的其他封裝類似，包封層207對於位於空隙之上的各個整合元件可具有在-20–50微米（µm）範圍中的底切值。包封層207針對整合元件的底切值可以是可變的。包封層207的至少一部分可具有均勻厚度，如圖2中所述。
圖10圖示了包括包含各種底切的包封層的封裝1000。封裝1000與圖6的封裝600相似，並且包括與封裝600相似或相同的元件。封裝1000包括整合元件1006、空隙662和包括腔的基板202。整合元件1006位於空隙662中。整合元件1006經由複數個焊料互連1060被耦合至整合元件206（例如，以正面對正面的配置）。整合元件1006的背側經由黏合劑1005被耦合至基板202。與本案中的其他封裝類似，包封層207對於位於空隙之上的各個整合元件可具有在-20–50微米（µm）範圍中的底切值。包封層207針對整合元件的底切值可以是可變的。包封層207的至少一部分可具有均勻厚度，如圖2中所述。
圖11圖示了包括各個底切的包封層的封裝1100。封裝1100與圖6的封裝600相似，並且包括與封裝600相似或相同的元件。封裝1100包括堆疊元件1104、空隙1162和包括腔的基板202。堆疊元件1104可包括堆疊濾波器。堆疊元件1104包括被配置為第一濾波器（例如，用於第一信號過濾的構件）的第一整合元件1114、被配置為第二濾波器（例如，用於第二信號過濾的構件）的第二整合元件1116、聚合物框1118和複數個互連1119。第一整合元件1114可以是頂濾波器，而第二整合元件1116可以是底濾波器。第一整合元件1114耦合至聚合物框1118的第一表面。第二整合元件1116耦合至聚合物框1118的第二表面。空隙1120可以位於第一整合元件1114、第二整合元件1116與聚合物框1118之間。複數個互連1119可以位於第一整合元件1114、聚合物框1118和第二整合元件1116的表面之上。堆疊元件1104經由複數個焊料互連1140被耦合至基板202。堆疊元件1104的至少一部分位於基板202的腔內。空隙1162包括基板202的腔。
包封層207被形成在基板202、整合元件204和堆疊元件1104之上，以使得包封層207具有大致均勻的厚度，因為包封層207大致遵循基板202、整合元件204和堆疊元件1104的輪廓。第一包封層207可在堆疊元件1104的頂表面和側表面上具有均勻厚度，及/或可在整合元件1114的頂表面和側表面上具有均勻厚度。包封層207可具有約80微米（µm）±8微米（µm）的厚度。包封層207針對堆疊元件1104的底切可以相對於第一整合元件1114的側表面或側壁來限定。與本案中的其他封裝類似，包封層207對於位於空隙之上的各個元件可具有在-20–50微米（µm）範圍中的底切值。包封層207針對整合元件及/或堆疊元件的底切值可以是可變的。包封層207的至少一部分可具有均勻厚度，如圖2中所述。
圖12圖示了包括各個底切的包封層的封裝1200。封裝1200與圖11的封裝1100相似，並且包括與封裝1100相似或相同的元件。封裝1200包括堆疊元件1204、空隙1162和包括腔的基板202。堆疊元件1204可包括堆疊濾波器。堆疊元件1204包括被配置為第一濾波器（例如，用於第一信號過濾的構件）的第一整合元件1114、被配置為第二濾波器（例如，用於第二信號過濾的構件）的第二整合元件1116、互連框1218和複數個互連1219。第一整合元件1114可以是頂濾波器，而第二整合元件1116可以是底濾波器。第一整合元件1114被耦合至互連框1218。第二整合元件1116被耦合至互連框1218。空隙1120可以位於第一整合元件1114、第二整合元件1116與互連框1218之間。複數個互連1219可以位於第二整合元件1116中且在其之上。複數個互連1219可以包括通孔、跡線及/或焊盤。堆疊元件1204經由複數個焊料互連1140被耦合至基板202。堆疊元件1124的至少一部分位於基板202的腔內。空隙1162包括基板202的腔。
包封層207被形成在基板202、整合元件204和堆疊元件1204之上，以使得包封層207具有大致均勻的厚度，因為包封層207大致遵循基板202、整合元件204和堆疊元件1204的輪廓。第一包封層207可在堆疊元件1204的頂表面和側表面上具有均勻厚度，及/或可在整合元件1114的頂表面和側表面上具有均勻厚度。包封層207可具有約80微米（µm）±8微米（µm）的厚度。包封層207針對堆疊元件1204的底切可以相對於第一整合元件1114的側表面或側壁來限定。與本案中的其他封裝類似，包封層207對於位於空隙之上的各個元件可具有在-20–50微米（µm）範圍中的底切值。包封層207針對整合元件及/或堆疊元件的底切值可以是可變的。包封層207的至少一部分可具有均勻厚度，如圖2中所述。
注意，一種封裝中的各個特徵可以在本案中所描述的任何封裝中實現。針對一種包封層圖示的底切是示例性的。封裝的不同實現可包括具有不同及/或可變底切的包封層，不同及/或可變底切包括正底切、負底切、中立底切或其組合。底切值的範圍是示例性的。不同實現可以具有帶不同值的底切。圍繞整合元件的包封層針對整合元件的不同側可具有相同或不同的底切值。在本案中圖示並描述的整合元件及/或元件中的任一者可以被至少一個包封層圍繞，以使得該整合元件及/或元件的所有側皆可以被該至少一個包封層圍繞。整合元件及/或元件的所有側可以被包封層圍繞，使得該包封層對於該等整合元件及/或元件的每一特定側可具有在-20–50微米（µm）範圍中的特定底切值。
本案中圖示的封裝的各個配置可以提供不同的技術優勢，包括較低的製造成本、改良的可靠性（例如，經由更好的CTE失配）和改良的效能（例如，經由降低各元件之間的路由路徑、更佳地限定的空隙）。
已經描述了各種封裝，現在將在下文描述用於製造封裝的序列。 用於製造包括具有受控底切的包封層的封裝的示例性序列
圖13A–圖13D圖示了用於提供或製造包括具有受控底切的包封層的封裝的示例性序列。在一些實現中，圖13A-圖13D的序列可被用於提供或製造圖6的封裝600，或本案中所描述的任何元件（例如，200、300、500、700、800、900、1000、1100、1200）中的任一者。
應當注意，圖13A-圖13D的序列可以組合一或多個階段以便簡化及/或闡明用於提供或製造封裝的序列。在一些實現中，該等製程的次序可被改變或修改。在一些實現中，可以在不脫離本案的精神的情況下替代或置換一或多個程序。
如圖13A中所示，階段1圖示了提供或製造基板202之後的狀態。基板202包括至少一個介電層220、複數個互連222（例如，跡線、焊盤、通孔）、腔1310、阻焊層224和阻焊層226。在圖15A–圖15B中圖示並描述製造基板的實例。基板的製造可包括層壓製程和鍍敷製程。用於製造基板的製程的各實例包括半加成製程（SAP）和經修改的半加成製程（mSAP）。然而，不同的實現可以不同地製造基板。不同實現可提供不同類型的基板（例如，無芯基板、層壓基板）。
階段2圖示了在經由複數個焊料互連660將整合元件606耦合至基板202之後的狀態。整合元件606可以經由拾放製程被置於基板202的腔1310內。回流焊接製程可以被用於經由複數個焊料互連660將整合元件606耦合至複數個互連221。
如圖13B所示，階段3圖示了在整合元件204經由複數個焊料互連240被耦合至基板202的第一表面，並且整合元件206經由複數個焊料互連260被耦合至基板202的第一表面之後的狀態。整合元件204和206可以經由拾放製程被置於基板202的第一表面上。回流焊接製程可以被用於（i）經由複數個焊料互連240將整合元件204耦合至複數個互連221，以及（ii）經由複數個焊料互連260將整合元件206耦合至複數個互連221。
階段4圖示了在包封層207被形成在基板202、整合元件204和整合元件206之上之後的狀態。包封層207可以是第一包封層（例如，用於第一包封的構件）。包封層207可包括模塑、樹脂及/或環氧樹脂。包封層207可包括各向同性材料及/或各向異性材料。片狀模塑製程（例如，真空層壓、壓縮模塑）可被用於形成包封層207。對於整合元件中的每一者，包封層207可具有在-20–50微米（µm）範圍中的底切值。包封層207針對整合元件及/或堆疊元件的底切值可以是可變的。
包封層207被形成在基板202、整合元件204和整合元件206之上，以使得包封層207具有大致均勻的厚度，因為包封層207大致遵循基板202、整合元件204和整合元件206的輪廓。例如，包封層207可具有約80微米（µm）±8微米（µm）的厚度。片狀模塑製程可允許對包封層207底切的精確且精準的控制，此舉進而允許對整合元件與基板之間的空隙（例如，242、262、662）的精確且精準的控制。包封層207可以在無需遵循基板202、整合元件204和整合元件206的輪廓的箔及/或密封膜的情況下被形成。此舉可以經由使用具有低黏度值的包封層207片狀模塑來完成，以使得包封層207基本上不會流到（諸）整合元件下方。因而，可以製造一種在包封層207與基板202、整合元件204和整合元件206之間沒有箔及/或密封膜的封裝。無箔封裝或無密封膜封裝的一個優點在於由於要求至少少了一個步驟且至少少了一種材料的事實導致此種封裝製造起來更便宜。
如圖13C中圖示的，階段5圖示了在包封層207之上形成包封層209之後的狀態。壓縮模塑製程、傳遞模塑製程，或液態模塑製程可被用來形成包封層209。包封層209可以是光可蝕刻的。在包封層209與包封層207之間可存在邊界介面。包封層209可包括模塑、樹脂及/或環氧樹脂。此外，除了模塑製程，包封層209可以與包封層207層壓在一起以建立單個片。包括包封層207和包封層209的該單個片可以經由真空層壓或壓縮模塑被應用到基板202、整合元件204和整合元件206。
階段6圖示了經由複數個焊料互連560將整合元件506耦合至基板202的第二表面之後的狀態。整合元件506可以經由拾放製程被置於基板202的第二表面之上。回流焊接製程可以被用於經由複數個焊料互連560將整合元件506耦合至複數個互連221。階段6亦圖示了耦合至基板202的複數個焊料互連230。回流焊接製程可被用於將複數個焊料互連230耦合至基板202。
如圖13D中圖示的，階段7圖示了在基板202的第二表面之上形成包封層509之後的狀態。壓縮模塑製程、傳遞模塑製程，或液態模塑製程可被用來形成包封層509。包封層509可以是光可蝕刻的。包封層509可包括模塑、樹脂及/或環氧樹脂。包封層509可以包封整合元件506和複數個焊料互連230的部分。在一些實現中，包封層509可位於整合元件506的背側上。
階段8圖示了在包封層209的表面和基板202的側表面上形成和定位EMI遮罩件250之後的狀態。可使用濺鍍製程、噴塗，及/或鍍敷製程來形成EMI遮罩件250。EMI遮罩件250可包括導電層。EMI遮罩件250可被配置成被耦合至接地。階段8可圖示圖6的封裝600。 用於製造包括具有受控底切的包封層的封裝的方法的示例性流程圖
在一些實現中，製造具有含有受控底切的包封層的封裝包括若干製程。圖14圖示了用於提供或製造具有帶受控底切的包封層的封裝的方法1400的示例性流程圖。在一些實現中，圖14的方法1400可被用來提供或製造本案中所描述的圖6的封裝600。然而，方法1400可被用於提供或製造本案中所描述的設備（例如，200、300、500、700、800、900、1000、1100、1200）中的任一者。
應當注意，圖14的序列可以組合一或多個製程以簡化及/或闡明用於提供或製造封裝的方法。在一些實現中，該等製程的次序可被改變或修改。
該方法（在1405）提供基板（例如，202）。該基板可以被提供或製造。基板可包括至少一個介電層220、複數個互連222（例如，跡線、焊盤、通孔）、腔1310、阻焊層224和阻焊層226。在圖15A–圖15B中圖示並描述製造基板的實例。基板的製造可包括層壓製程和鍍敷製程。用於製造基板的製程的各實例包括半加成製程（SAP）和經修改的半加成製程（mSAP）。然而，不同的實現可以不同地製造基板。不同實現可提供不同類型的基板（例如，無芯基板、層壓基板）。圖13A的階段1圖示並描述了基板的實例。
該方法（在1410）將至少一個元件（例如，204、206、606）耦合至基板（例如，202）。該元件可以被置於基板的腔內。該元件可以被耦合至基板的第一表面。拾放製程可以被用於放置元件並將其耦合至基板。圖13A-圖13B的階段2和3圖示並描述了耦合至基板的元件的實例。
該方法（在1415）在基板202的第一表面和元件（例如，204、206）之上形成包封層（例如，207）。包封層207可以是第一包封層（例如，用於第一包封的構件）。包封層207可包括模塑、樹脂及/或環氧樹脂。包封層207可包括各向同性材料及/或各向異性材料。片狀模塑製程（例如，真空層壓、壓縮模塑）可被用於形成包封層207。對於整合元件中的每一者，包封層207可具有在-20–50微米（µm）範圍中的底切值。包封層207針對整合元件及/或堆疊元件的底切值可以是可變的。
包封層207被形成（例如，被設置）在基板202、整合元件204和整合元件206之上，以使得包封層207具有大致均勻的厚度，因為包封層207大致遵循基板（例如202）和元件（例如，204、206）的輪廓。例如，包封層207可具有約80微米（µm）±8微米（µm）的厚度。片狀模塑製程可允許對包封層207底切的精確且精準的控制，此舉進而允許對元件與基板之間的空隙（例如，242、262、662）的精確且精準的控制。包封層207可以在無需遵循基板202、整合元件204和整合元件206的輪廓的箔及/或密封膜的情況下被形成。此舉可以經由使用具有低黏度值的包封層207片狀模塑來完成，以使得包封層207基本上不會流到（諸）整合元件下方。圖13C的階段4圖示並描述了被形成在基板和至少一個元件之上的包封層的實例。
該方法（在1420處）在第一包封層（例如，207）之上形成第二包封層（例如，209）。壓縮模塑製程、傳遞模塑製程，或液態模塑製程可被用來形成包封層209。包封層209可以是光可蝕刻的。在包封層209與包封層207之間可存在邊界介面。包封層209可包括模塑、樹脂及/或環氧樹脂。圖13C的階段5圖示並描述了形成在第一包封層上的第二包封層的實例。
該方法（在1425）將至少一個元件（例如，506）和複數個焊料互連（例如，560）耦合至基板（例如，202）的第二表面（例如，底表面）。拾放製程和回流焊接製程可被用於將整合元件506耦合至基板202。回流焊接製程可被用於將複數個焊料互連230耦合至基板202。圖13C的階段6圖示並描述了耦合至基板的元件和焊料互連的實例。
該方法（在1430處）在基板202的第二表面之上形成包封層（例如，509）。壓縮模塑製程、傳遞模塑製程，或液態模塑製程可被用來形成包封層509。包封層509可以是光可蝕刻的。包封層509可包括模塑、樹脂及/或環氧樹脂。包封層509可以包封整合元件506和複數個焊料互連230的部分。圖13D的階段7圖示並描述了形成在基板的第二表面上的包封層的實例。
該方法（在1435）在包封層209的表面和基板202的側表面之上形成EMI遮罩件（例如，250）。可使用濺鍍製程、噴塗，及/或鍍敷製程來形成EMI遮罩件250。EMI遮罩件250可包括導電層。EMI遮罩件250可被配置成被耦合至接地。圖13D的階段8圖示並描述了形成EMI遮罩件的實例。 用於製造基板的示例性序列
圖15A-圖15C圖示了用於提供或製造基板的示例性序列。在一些實現中，圖15A–圖15C的序列可被用於提供或製造圖6的基板202或本案中所描述的任何基板。如上所提及的，不同實現可使用不同基板，包括層壓基板和無芯基板（例如，嵌入跡線基板）。圖15A-圖15C所示的基板是可以使用的可能基板的實例。
應當注意，圖15A-圖15C的序列可以組合一或多個階段以便簡化及/或闡明用於提供或製造基板的序列。在一些實現中，該等製程的次序可被改變或修改。在一些實現中，可以在不脫離本案的精神的情況下替代或置換一或多個程序。
如圖15A中所示，階段1圖示了提供載體1500之後的狀態。載體1500可以是基板。
階段2圖示了在載體1500上形成互連1502之後的狀態。互連1502可以是來自複數個互連221的互連。可以使用鍍敷製程來形成互連1502。
階段3圖示了在互連1502和載體1500上形成介電層1520之後的狀態。可使用沉積及/或層壓製程來形成介電層1520。
階段4圖示了在介電層1520中形成一或多個腔1503之後的狀態。可以使用鐳射製程（例如，鐳射消融）或光蝕刻製程（例如，光微影製程）來形成一或多個腔1503。
階段5圖示了在介電層1520上形成互連1504之後的狀態。互連1504可以是來自複數個互連221的互連。可以使用鍍敷製程來形成互連1504。
如圖15B中所示，階段6圖示了在介電層1520上形成介電層1540之後的狀態。介電層1540可以由與介電層1520相同的材料製成。可使用沉積及/或層壓製程來形成介電層1540。介電層1540可以被形成為使得腔1310被形成。
階段7圖示了在介電層1540上形成互連1542之後的狀態。互連1542可以是來自複數個互連221的互連。可以使用鍍敷製程來形成互連1542。在一些實現中，一或多個腔可能已經被形成在介電層1540中，並且互連1542可被形成在介電層1540的腔之上。
階段8圖示了在介電層1540上形成介電層1560之後的狀態。介電層1560可以由與介電層1520及/或1540相同的材料製成。可使用沉積及/或層壓製程來形成介電層1560。介電層1560可以被形成為使得腔1310被形成。
如圖15C中所示，階段9圖示了在介電層1560上形成互連1562和1564之後的狀態。互連1562可以是來自複數個互連221的互連。可以使用鍍敷製程來形成互連1562。在一些實現中，一或多個腔可能已經被形成在介電層1560中，並且互連1562可被形成在介電層1560的腔之上。
階段10圖示了在移除載體1500之後的狀態。階段10可以圖示基板202的一部分。介電層220可以表示介電層1520、1540和1560。互連221可以表示互連1502、1504、1542和1562和1564。 用於製造堆疊元件的示例性序列
圖16A-圖16B圖示了用於提供或製造包括堆疊整合元件（例如，堆疊濾波器）的元件的示例性序列。在一些實現中，圖16A-圖16B的序列可被用於提供或製造圖11的堆疊元件1104或本案中所描述的任何堆疊元件。
應當注意，圖16A-圖16B的序列可以組合一或多個階段以簡化及/或闡明用於提供或製造包括堆疊整合元件的元件的序列。在一些實現中，該等製程的次序可被改變或修改。在一些實現中，可以在不脫離本案的精神的情況下替代或置換一或多個程序。
如圖16A中所示，階段1圖示了在提供整合元件1114之後的狀態。整合元件1114可以被配置為濾波器。整合元件1114可以是裸晶粒濾波器（例如，SAW濾波器、BAW濾波器）。整合元件1114包括基板1610和至少一個金屬層1614。基板1610可以是壓電基板。例如，基板1610可包括壓電材料（例如，氮化鋁（AlN）、石英、鈮酸鋰、鉭酸鋰）。在另一實例中，基板1610可包括形成在並且位於基板1610的表面之上的壓電層。例如，基板1610可包括玻璃，其具有形成在並且位於該玻璃的表面之上的壓電層。可使用其他材料來代替玻璃。如本案中所使用的壓電基板可意指包括壓電材料的基板及/或包括耦合至基板表面且位於基板表面上的壓電層的基板。不同實現可針對壓電材料及/或壓電層使用不同材料。
至少一個金屬層1614被形成在基板1610上。在其中基板1610包括形成在並且位於基板1610的表面上的壓電層的例子中，至少一個金屬層1614可以被形成在並且位於該壓電層之上。至少一個金屬層1614可包括導電材料，諸如銅（Cu）。至少一個金屬層1614可以被圖案化及/或配置為用於整合元件1114的互連、電極及/或換能器。在一些實現中，金屬層1614可包括第一金屬層和第二金屬層。第一金屬層可被配置成用作至少一個換能器，而第二金屬層可以被配置為耦合至該換能器的至少一個互連。在一些實現中，金屬層614中的第一金屬層可以被形成，並且接著金屬層614中的第二金屬層可以被形成。
階段2圖示了在將聚合物框1118耦合至整合元件1114之後的狀態。可以使用沉積製程來形成聚合物框1118並將其耦合至整合元件1114。
階段3圖示了在提供整合元件1116之後的狀態。整合元件1116可以被配置為濾波器。整合元件1116可以是裸晶粒濾波器（例如，SAW濾波器、BAW濾波器）。整合元件1116包括基板1620和至少一個金屬層1624。基板1620可以是壓電基板。例如，基板1610可包括壓電材料（例如，氮化鋁（AlN）、石英、鈮酸鋰、鉭酸鋰）。在另一實例中，基板1620可包括形成在並且位於基板1620的表面之上的壓電層。例如，基板1620可包括玻璃，其具有形成在並且位於該玻璃的表面之上的壓電層。可使用其他材料來代替玻璃。如本案中所使用的壓電基板可意指包括壓電材料的基板及/或包括耦合至基板表面且位於基板表面上的壓電層的基板。不同實現可針對壓電材料及/或壓電層使用不同材料。
至少一個金屬層1624被形成在基板1620上。在其中基板1620包括形成在並且位於基板1620的表面上的壓電層的例子中，至少一個金屬層1624可以被形成在並且位於該壓電層之上。至少一個金屬層1624可包括導電材料，諸如銅（Cu）。至少一個金屬層1624可以被圖案化及/或配置為用於整合元件1116的互連、電極及/或換能器。在一些實現中，金屬層1624可包括第一金屬層和第二金屬層。第一金屬層可被配置成用作至少一個換能器，而第二金屬層可以被配置為耦合至該換能器的至少一個互連。在一些實現中，金屬層1624中的第一金屬層可以被形成，並且接著金屬層1624中的第二金屬層可以被形成。
階段4圖示了在基板1620和至少一個金屬層1624上形成可任選的保護層1630之後的狀態。保護層1630可以被沉積在基板1620和至少一個金屬層1624上。
如圖16B所示，階段5圖示了將整合元件1114耦合至整合元件1116以使得在整合元件1114、整合元件1116與聚合物框1118之間形成空隙1120之後的狀態。熱壓製程可被用於將整合元件1114耦合至整合元件1116。若保護層1630被形成，則保護層1630可以在將整合元件1114耦合至整合元件1116之後被移除。
階段6圖示了在整合元件1114、整合元件1116和聚合物框1118的表面上形成複數個互連1119之後的狀態。複數個互連1119可以被耦合至至少一個金屬層1614和至少一個金屬層1624。可以使用鍍敷製程、濺鍍製程，及/或噴塗製程來形成複數個互連1119。
階段7圖示了將複數個焊料互連1140耦合至複數個互連1119之後的狀態。回流焊接製程可被用於將複數個焊料互連1140耦合到複數個互連1119。階段7可以圖示如圖11中所示的堆疊元件1104。 用於製造堆疊元件的示例性序列
圖17A-圖17B圖示了用於提供或製造包括堆疊整合元件（例如，堆疊濾波器）的元件的示例性序列。在一些實現中，圖17A-圖17B的序列可被用於提供或製造圖12的堆疊元件1204或本案中所描述的任何堆疊元件。
應當注意，圖17A-圖17B的序列可以組合一或多個階段以簡化及/或闡明用於提供或製造包括堆疊整合元件的元件的序列。在一些實現中，該等製程的次序可被改變或修改。在一些實現中，可以在不脫離本案的精神的情況下替代或置換一或多個程序。
如圖17A中所示，階段1圖示了在提供整合元件1114之後的狀態。整合元件1114可以被配置為濾波器。整合元件1114包括基板1610和至少一個金屬層1614。圖17A的整合元件1114與圖16A的整合元件1114相似或相同。
階段2圖示了將互連框1218耦合至整合元件1114之後的狀態。互連框1218可以被耦合至至少一個金屬層1614。可以使用鍍敷製程來形成互連框1218並將其耦合至整合元件1114。然而，不同實現可以以不同方式形成和耦合互連框1218。
階段3圖示了提供整合元件1116之後的狀態。整合元件1116可以被配置為濾波器。整合元件1216可以是裸晶粒濾波器（例如，SAW濾波器、BAW濾波器）。整合元件1116包括基板1620、至少一個金屬層1624和至少一個通孔1217。圖17A的整合元件1116與圖16A的整合元件1116相似。至少一個通孔1217可以行進穿過基板1620。
階段4圖示了在基板1620和至少一個金屬層1624上形成可任選的保護層1630之後的狀態。保護層1630可以被沉積在基板1620和至少一個金屬層1624上。
如圖17B所示，階段5圖示了將整合元件1114耦合至整合元件1116以使得在整合元件1114、整合元件1216與互連框1218之間形成空隙1120之後的狀態。互連框1218可以被耦合至至少一個通孔1217。如上所提及的，互連框1218可以被耦合至至少一個金屬層1614。熱壓製程可被用於將整合元件1114耦合至整合元件1216。若保護層1630被形成，則保護層1630可以在將整合元件1114耦合至整合元件1216之後被移除。
階段6圖示了在整合元件1216的表面上形成複數個互連1219之後的狀態。複數個互連1219可以被耦合至至少一個通孔1217和至少一個金屬層1624。至少一個通孔1217可以被耦合至至少一個金屬層1624。可以使用鍍敷製程、濺鍍製程，及/或噴塗製程來形成複數個互連1219。
階段7圖示了將複數個焊料互連1140耦合至複數個互連1219之後的狀態。回流焊接製程可被用於將複數個焊料互連1140耦合到複數個互連1219。階段7可以圖示如圖12中所示的堆疊元件1204。 示例性電子設備
圖18圖示了可整合有前述元件、整合元件、積體電路（IC）封裝、積體電路（IC）元件、半導體元件、積體電路、晶粒、仲介體、封裝、層疊封裝（PoP）、系統級封裝（SiP），或晶片上系統（SoC）中的任一者的各種電子設備。例如，行動電話設備1802、膝上型電腦設備1804、固定位置終端設備1806、可穿戴設備1808，或機動交通工具1810可以包括如本文中所描述的元件1800。元件1800可以是例如本文中所描述的元件及/或積體電路（IC）封裝中的任一者。圖18中所圖示的設備1802、1804、1806和1808，以及交通工具1810僅僅是示例性的。其他電子設備亦能以元件1800為特徵，此類電子設備包括但不限於包括以下各項的設備（例如，電子設備）群組：行動設備、掌上型個人通訊系統（PCS）單元、可攜式資料單元（諸如個人數位助理）、啟用全球定位系統（GPS）的設備、導航設備、機上盒、音樂播放機、視訊播放機、娛樂單元、固定位置資料單元（諸如儀錶讀取裝備）、通訊設備、智慧型電話、平板電腦、電腦、可穿戴設備（例如，手錶、眼鏡）、物聯網路（IoT）設備、伺服器、路由器、機動交通工具（例如，自主交通工具）中實現的電子設備，或者儲存或取得資料或電腦指令的任何其他設備，或者其任何組合。
圖2-圖12、圖13A-圖13D、圖14、圖15A-圖15C、圖16A-圖16B、圖17A-圖17B及/或圖18中圖示的元件、程序、特徵及/或功能中的一者或多者可被重新安排及/或組合成單個元件、程序、特徵或功能，或可在若干元件、程序，或功能中實施。亦可添加附加元件、組件、程序，及/或功能而不會脫離本案。亦應當注意，本案中的圖2-圖12、圖13A-圖13D、圖14、圖15A-圖15C、圖16A-圖16B、圖17A-圖17B及/或圖18及其對應描述並不限於晶粒及/或IC。在一些實現中，圖2-圖12、圖13A-圖13D、圖14、圖15A-圖15C、圖16A-圖16B、圖17A-圖17B及/或圖18及其對應描述可被用來製造、建立、提供，及/或生產元件及/或整合元件。在一些實現中，元件可以包括晶粒、整合元件、整合被動元件（IPD）、晶粒封裝、積體電路（IC）元件、元件封裝、積體電路（IC）封裝、晶圓、半導體元件、層疊封裝（PoP）元件、散熱元件及/或仲介體。
注意，本案中的附圖可以表示各種部件、元件、物件、元件、封裝、整合元件、積體電路，及/或電晶體的實際表示及/或概念表示。在一些例子中，附圖可以不是按比例的。在一些例子中，為了清楚起見，並未圖示所有元件及/或部件。在一些例子中，附圖中的各個部件及/或元件的定位、位置、尺寸，及/或形狀可以是示例性的。在一些實現中，附圖中的各個元件及/或部件可以是可任選的。
措辭「示例性」在本文中用於意指「用作示例、實例，或說明」。本文中描述為「示例性」的任何實現或態樣不必被解釋為優於或勝過本案的其他態樣。同樣，術語「態樣」不要求本案的所有態樣皆包括所論述的特徵、優點或操作模式。術語「耦合」在本文中用於指兩個物件之間的直接或間接耦合（例如，機械耦合）。例如，若物件A實體地接觸物件B，且物件B接觸物件C，則物件A和C仍可被認為是彼此耦合的——即便物件A和C並非彼此直接實體接觸。術語「電耦合」可表示兩個物件直接或間接耦合在一起，以使得電流（例如，信號、功率、接地）可以在兩個物件之間傳遞。電耦合的兩個物件在該兩個物件之間可以有或者可以沒有電流傳遞。術語「第一」、「第二」、「第三」和「第四」（及/或高於第四的任何事物）的使用是任意的。所描述的任何元件可以是第一元件、第二元件、第三元件或第四元件。例如，被稱為第二元件的元件可以是第一元件、第二元件、第三元件或第四元件。術語「圍繞」意指物件可以部分地圍繞或完全圍繞另一物件。術語「包封」意指物件可以部分地包封或完全包封另一物件。術語「頂部」和「底部」是任意的。位於頂部的元件可以處在位於底部的元件之上。頂部元件可被視為底部元件，反之亦然。如本案所描述的，位於第二元件「之上」的第一元件可意味著第一元件位於第二元件之上或下方，此情形取決於底部或頂部被如何任意定義。在另一實例中，第一元件可位於第二元件的第一表面之上（例如，之上），而第三元件可位於第二元件的第二表面之上（例如，下方），其中第二表面與第一表面相對。進一步注意到，如在本案中在一個元件位於另一元件之上的上下文中所使用的術語「之上」可被用來表示元件在另一元件上及/或在另一元件中（例如，在元件的表面上或被嵌入在元件中）。由此，例如，第一元件在第二元件之上可表示：（1）第一元件在第二元件之上，但是不直接接觸第二元件；（2）第一元件在第二元件上（例如，在第二元件的表面上）；及/或（3）第一元件在第二元件中（例如，嵌入在第二元件中）。位於第二元件「中」的第一元件可以部分地位於第二元件中或者完全位於第二元件中。如本案中所使用的術語「約「值X」」或「大致為值X」意味著在「值X」的百分之十以內。例如，約1或大致為1的值將意味著在0.9-1.1範圍中的值。
在一些實現中，互連是元件或封裝中允許或促進兩個點、元件及/或組件之間的電連接的元件或組件。在一些實現中，互連可包括跡線、通孔、焊盤、焊柱、重分佈金屬層，及/或凸塊下金屬化（UBM）層。在一些實現中，互連是可被配置成為信號（例如，資料信號）、接地及/或功率提供電路徑的導電材料。互連可包括多於一個元件或組件。互連可以由一或多個互連來定義。互連可以是電路的一部分。不同實現可使用不同製程及/或序列來形成互連。在一些實現中，化學氣相沉積（CVD）製程、物理氣相沉積（PVD）製程、濺鍍製程、噴塗，及/或鍍敷製程可被用於形成互連。
亦注意到，本文中所包含的各種揭示可以作為被圖示為流程圖、流程示意圖、結構圖或方塊圖的程序來描述。儘管流程圖可以將操作描述為順序程序，但很多操作可以並行地或併發地執行。另外，可以重新排列操作的次序。程序在其操作完成時終止。
本文中所描述的本案的各種特徵可實現於不同系統中而不會脫離本案。應當注意，本案的以上各態樣僅是實例，且不應被解釋成限定本案。對本案的各態樣的描述意欲是說明性的，而非限定所附請求項的範疇。由此，本發明的教示可以現成地應用於其他類型的裝置，並且許多替換、修改和變形對於熟習此項技術者將是顯而易見的。
100:封裝 102:基板 104:整合元件 120:介電層 121:互連 124:第一阻焊層 126:第二阻焊層 130:焊料互連 140:焊料互連 160:包封層 200:封裝 202:基板 204:整合元件 206:整合元件 207:包封層 209:包封層 220:介電層 221:互連 224:阻焊層 226:阻焊層 230:焊料互連 240:焊料互連 242:空隙 250:EMI遮罩件 260:焊料互連 262:空隙 300:封裝 304:正底切 306:負底切 500:封裝 506:整合元件 509:包封層 560:焊料互連 600:封裝 606:整合元件 660:焊料互連 662:空隙 700:封裝 706:整合元件 760:焊料互連 800:封裝 806:被動元件 900:封裝 906:整合元件 960:焊料互連 1000:封裝 1005:黏合劑 1006:整合元件 1060:焊料互連 1100:封裝 1104:堆疊元件 1114:第一整合元件 1116:第二整合元件 1118:聚合物框 1119:互連 1120:空隙 1140:焊料互連 1162:空隙 1200:封裝 1204:堆疊元件 1210:腔 1216:整合元件 1217:通孔 1218:互連框 1219:互連 1310:腔 1400:方法 1405:步驟 1410:步驟 1415:步驟 1420:步驟 1425:步驟 1430:步驟 1435:步驟 1500:載體 1502:互連 1503:腔 1504:互連 1520:介電層 1540:介電層 1542:互連 1560:介電層 1562:互連 1610:基板 1614:金屬層 1620:基板 1624:金屬層 1630:保護層 1800:元件 1802:行動電話設備 1804:膝上型電腦設備 1806:固定位置終端設備 1808:可穿戴設備 1810:機動交通工具
在結合附圖理解下文闡述的詳細描述時，各種特徵、本質和優點會變得明顯，在附圖中，相像的元件符號貫穿始終作相應標識。
圖1圖示了包括基板和整合元件的封裝的剖視圖。
圖2圖示了包括基板、整合元件和具有受控底切的包封層的封裝的剖視圖。
圖3圖示了包括基板、整合元件和具有受控底切的包封層的封裝的剖視圖。
圖4圖示了包括基板、整合元件和具有受控底切的包封層的封裝的特寫視圖。
圖5圖示了包括基板、整合元件和具有受控底切的包封層的另一封裝的剖視圖。
圖6圖示了包括基板、整合元件和具有受控底切的包封層的另一封裝的剖視圖。
圖7圖示了包括基板、整合元件和具有受控底切的包封層的另一封裝的剖視圖。
圖8圖示了包括基板、整合元件和具有受控底切的包封層的另一封裝的剖視圖。
圖9圖示了包括基板、整合元件和具有受控底切的包封層的另一封裝的剖視圖。
圖10圖示了包括基板、整合元件和具有受控底切的包封層的另一封裝的剖視圖。
圖11圖示了包括基板、堆疊元件和具有受控底切的包封層的另一封裝的剖視圖。
圖12圖示了包括基板、堆疊元件和具有受控底切的包封層的另一封裝的剖視圖。
圖13A-圖13D圖示了用於製造包括框架的晶粒的示例性序列。
圖14圖示了用於製造包括基板、整合元件和具有受控底切的包封層的封裝的方法的示例性流程圖。
圖15A–圖15C圖示了用於製造基板的示例性序列。
圖16A–圖16B圖示了用於製造包括堆疊整合元件的設備的示例性序列。
圖17A-圖17B圖示了用於製造包括堆疊整合元件的設備的示例性序列。
圖18圖示了可以整合本文中所描述的晶粒、整合元件、整合被動元件（IPD）、被動元件、封裝，及/或元件封裝的各種電子設備。
200:封裝
202:基板
204:整合元件
206:整合元件
207:包封層
209:包封層
220:介電層
221:互連
224:阻焊層
226:阻焊層
230:焊料互連
240:焊料互連
242:空隙
250:EMI遮罩件
260:焊料互連
262:空隙

Claims (33)

  1. 一種封裝，包括： 包括一第一表面的一基板； 耦合至該基板的該第一表面的一整合元件； 位於該基板的該第一表面和該整合元件之上的一第一包封層，其中該第一包封層包括相對於該整合元件的一側表面的一底切；及 位於該整合元件與該基板的該第一表面之間的一空隙，其中該空隙被該第一包封層的該底切橫向圍繞。
  2. 如請求項1之封裝，其中該第一包封層相對於該整合元件的該側表面的該底切在-20至50微米（µm）的一範圍內。
  3. 如請求項1之封裝，其中該封裝在該第一包封層與該整合元件之間沒有一密封膜。
  4. 如請求項1之封裝，進一步包括位於該第一包封層之上的一第二包封層，其中該第一包封層在該整合元件的一頂表面之上具有一均勻厚度。
  5. 如請求項4之封裝，其中該第二包封層具有與該第一包封層不同的一屬性。
  6. 如請求項4之封裝，其中該第二包封層具有一第二熱膨脹係數（CTE），該第二熱膨脹系統或（i）大於該第一包封層的一第一CTE或（ii）低於該第一包封層的該第一CTE。
  7. 如請求項1之封裝，其中該基板具有一基板CTE，該基板CTE在該整合元件和該第一包封層的一有效CTE的每開爾文百萬分之15（ppm/K）之內。
  8. 如請求項1之封裝，其中該基板具有一基板CTE，該基板CTE在該封裝的一剩餘部分的一有效CTE的每開爾文百萬分之15（ppm/K）之內。
  9. 如請求項1之封裝， 其中該基板包括一腔， 其中該整合元件位於該基板的該腔之上， 其中該空隙包括該基板的該腔，以及 其中該封裝包括位於該基板的該腔中的一第二整合元件。
  10. 如請求項1之封裝，進一步包括： 耦合至該基板的一堆疊元件；及 位於該堆疊元件與該基板之間的一第二空隙， 其中該基板包括一腔， 其中該第二空隙包括該基板的該腔，以及 其中該堆疊元件位於該基板的該腔之上。
  11. 如請求項10之封裝，其中該堆疊元件包括一第一裸晶粒濾波器和一第二裸晶粒濾波器。
  12. 如請求項1之封裝，其中該整合元件包括一射頻（RF）元件、一被動元件、一濾波器、一電容器、一電感器、一面聲波（SAW）濾波器、一體聲波（BAW）濾波器、一處理器、一記憶體及/或其組合。
  13. 如請求項1之封裝，進一步包括： 位於該第一包封層之上的一第二包封層；及 位於該第二包封層之上的一電磁干擾（EMI）遮罩件。
  14. 如請求項13之封裝，進一步包括： 耦合至該基板的一第二表面的一第二整合元件；及 耦合至該基板的該第二表面並且包封該第二整合元件的一第三包封層。
  15. 一種裝置，包括： 包括一第一表面的一基板； 耦合至該基板的該第一表面的一整合元件； 位於該基板的該第一表面和該整合元件之上的用於第一包封的構件，其中該用於第一包封的構件包括相對於該整合元件的一側表面的一底切；及 位於該整合元件與該基板的該第一表面之間的一空隙，其中該空隙被該用於第一包封的構件的該底切橫向圍繞。
  16. 如請求項15之裝置，其中該用於第一包封的構件的相對於該整合元件的該側表面的該底切在-20至50微米（µm）的一範圍內。
  17. 如請求項15之裝置，其中該裝置在該用於第一包封的構件與該整合元件之間沒有一密封膜。
  18. 如請求項15之裝置，進一步包括位於該用於第一包封的構件之上的用於第二包封的構件，其中該用於第二包封的構件具有與該用於第一包封的構件不同的一屬性。
  19. 如請求項18之裝置，其中該用於第二包封的構件具有一第二熱膨脹係數（CTE），該第二熱膨脹係數大於該用於第一包封的構件的一第一CTE。
  20. 如請求項15之裝置，其中該基板具有一基板CTE，該基板CTE在該整合元件和該用於第一包封的構件的一有效CTE的每開爾文百萬分之15（ppm/K）之內。
  21. 如請求項15之裝置，其中該基板具有一基板CTE，該基板CTE約在每開爾文百萬分之5至20（ppm/K）之間。
  22. 如請求項15之裝置， 其中該基板包括一腔， 其中該整合元件位於該基板的該腔之上， 其中該空隙包括該基板的該腔，以及 其中該裝置包括位於該基板的該腔中的一第二整合元件。
  23. 如請求項15之裝置，進一步包括： 耦合至該基板的一堆疊元件；及 位於該堆疊元件與該基板之間的一第二空隙， 其中該基板包括一腔， 其中該第二空隙包括該基板的該腔，以及 其中該堆疊元件位於該基板的該腔之上。
  24. 如請求項23之裝置，其中該堆疊元件包括用於第一信號過濾的一構件以及用於第二信號過濾的一構件。
  25. 如請求項15之裝置，其中該整合元件包括一射頻（RF）元件、一被動元件、一濾波器、一電容器、一電感器、一面聲波（SAW）濾波器、一體聲波（BAW）濾波器、一處理器、一記憶體及/或其組合。
  26. 如請求項15之裝置，進一步包括： 位於該用於第一包封的構件之上的用於第二包封的構件；及 位於該用於第二包封的構件之上的用於電磁干擾（EMI）遮罩的構件。
  27. 如請求項26之裝置，進一步包括： 耦合至該基板的一第二表面的一第二整合元件；及 耦合至該基板的該第二表面並且包封該第二整合元件的用於第三包封的構件。
  28. 如請求項15之裝置，其中該裝置包括從由以下各項組成的一群組中選擇的一設備：一音樂播放機、一視訊播放機、一娛樂單元、一導航設備、一通訊設備、一行動設備、一行動電話、一智慧型電話、一個人數位助理、一固定位置終端、一平板電腦、一電腦、一可穿戴設備、一膝上型電腦、一伺服器、一物聯網路（IoT）設備，以及一機動交通工具中的一設備。
  29. 一種用於製造一封裝的方法，包括以下步驟： 提供包括一第一表面的一基板； 將一整合元件耦合至該基板的該第一表面；及 在該基板的該第一表面和該整合元件之上形成一第一包封層， 其中該第一包封層包括相對於該整合元件的一側表面的一底切，以及 其中形成該第一包封層形成位於該整合元件與該基板的該第一表面之間的一空隙，其中該空隙被該第一包封層的該底切橫向圍繞。
  30. 如請求項29之方法，其中該第一包封層相對於該整合元件的該側表面的該底切在-20至50微米（µm）的一範圍內。
  31. 如請求項29之方法，其中該封裝在該第一包封層與該整合元件之間沒有一密封膜。
  32. 如請求項29之方法，進一步包括以下步驟：在該第一包封層之上形成一第二包封層。
  33. 如請求項32之方法，其中該第二包封層具有與該第一包封層不同的一屬性。
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