TW201940449A - 使用保護性材料的貫穿玻璃通孔的製造 - Google Patents

使用保護性材料的貫穿玻璃通孔的製造 Download PDF

Info

Publication number
TW201940449A
TW201940449A TW107137969A TW107137969A TW201940449A TW 201940449 A TW201940449 A TW 201940449A TW 107137969 A TW107137969 A TW 107137969A TW 107137969 A TW107137969 A TW 107137969A TW 201940449 A TW201940449 A TW 201940449A
Authority
TW
Taiwan
Prior art keywords
glass substrate
laser
electronic devices
glass
steps
Prior art date
Application number
TW107137969A
Other languages
English (en)
Other versions
TWI798279B (zh
Inventor
羅伯喬治 曼利
拉傑許 瓦迪
Original Assignee
美商康寧公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商康寧公司 filed Critical 美商康寧公司
Publication of TW201940449A publication Critical patent/TW201940449A/zh
Application granted granted Critical
Publication of TWI798279B publication Critical patent/TWI798279B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/308—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising acrylic (co)polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/32—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54—Glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00—Coating on the layer surface
    • B32B2255/20—Inorganic coating
    • B32B2255/205—Metallic coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/732—Dimensional properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/208—Touch screens
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2203/00—Production processes
    • C03C2203/10—Melting processes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/365—Coating different sides of a glass substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Gas-Filled Discharge Tubes (AREA)
  • Glass Compositions (AREA)
  • Surface Treatment Of Glass (AREA)
  • Thin Film Transistor (AREA)

Abstract

一種子組件包含玻璃基板、複數個電子裝置以及鈍化層。玻璃基板包含第一表面、與第一表面相對的第二表面以及在第一表面與第二表面之間延伸的第三表面。玻璃基板包含從第一表面延伸至第二表面的複數個雷射損傷區域。該複數個電子裝置於玻璃基板之第一表面上。鈍化層於該複數個電子裝置及玻璃基板之第三表面上。鈍化層包含至該複數個雷射損傷區域中之每個雷射損傷區域的開口。

Description

使用保護性材料的貫穿玻璃通孔的製造
本申請案根據專利法主張於2018年10月27日申請之美國臨時申請案序號第62/578,109號之優先權之權益，依據該案之內容且將該案之內容以其全文引用方式併入本文。
本揭示案一般而言關於貫穿玻璃通孔(through glass via; TGV)。更具體而言，本揭示案關於使用保護性材料製造TGV以在裝置（如顯示器）內形成電訊號路徑。
玻璃為多種電子應用中廣泛使用的材料，如顯示器、中介層(interposer)、感測器等。電子顯示器可用於多種類型的裝置，如智慧型手機、平板電腦、車用電子裝置、擴增實境(augmented reality)裝置等。電子裝置可包含延伸穿過玻璃基板之厚度的通孔，以將電訊號從玻璃基板之一個主表面傳遞到玻璃基板之另一個主表面。通孔可在位於玻璃基板之頂部的電路與位於玻璃基板下方的電路之間傳送電訊號及電力。
在貫穿玻璃通孔(TGV)基板之表面上形成電路的電子圖案之製造可包含可能造成TGV中的光阻劑包埋(entrapment)的微影步驟。TGV中的此光阻劑包埋可能損害TGV基板之表面上形成的電子圖案之品質。因此，本文揭示在包含TGV的玻璃基板上製造電子圖案同時防止TGV中的光阻劑包埋的方法。
本揭示案之一些實施例關於子組件。該子組件包含玻璃基板、複數個電子裝置以及鈍化層。玻璃基板包含第一表面、與第一表面相對的第二表面以及在第一表面與第二表面之間延伸的第三表面。玻璃基板包含從第一表面延伸至第二表面的複數個雷射損傷區域。該複數個電子裝置於玻璃基板之第一表面上。鈍化層於該複數個電子裝置及玻璃基板之第三表面上。鈍化層包含至該複數個雷射損傷區域中之每個雷射損傷區域的開口。
而本揭示案之其他實施例關於製造玻璃部件的方法。該方法包含將玻璃基板雷射損傷，以產生從該玻璃基板之第一表面延伸至該玻璃基板之第二表面的複數個雷射損傷區域，第二表面與第一表面相對。該方法進一步包含於玻璃基板之第一表面上製造複數個電子裝置。該方法進一步包含於該複數個電子裝置及該玻璃基板之第三表面上方施加保護性材料，第三表面於該玻璃基板之第一表面與第二表面之間延伸。該方法進一步包含蝕刻該複數個雷射損傷區域以賦予相應的複數個貫穿玻璃通孔。
而本揭示案之其他實施例關於用於製造顯示器的方法。該方法包含將玻璃基板雷射損傷，以產生從該玻璃基板之第一表面延伸至該玻璃基板之第二表面的複數個雷射損傷區域，第二表面與第一表面相對。該方法進一步包含於玻璃基板之第一表面上製造薄膜電晶體之陣列。該方法進一步包含於該薄膜電晶體之陣列上方及於該玻璃基板之第三表面上方施加保護性材料，第三表面於該玻璃基板之第一表面與第二表面之間延伸。該方法進一步包含蝕刻該複數個雷射損傷區域以賦予相應的複數個貫穿玻璃通孔。該方法進一步包含將該複數個貫穿玻璃通孔金屬化以產生相應的複數個電觸點(electrical contact)，該等電觸點延伸穿過該玻璃基板並且耦合至該薄膜電晶體之陣列。該方法進一步包含移除該保護性材料。
本文揭示的子組件及方法使得能夠使用貫穿玻璃的電訊號路徑將電訊號及/或電力從位於玻璃基板之一側上的電路傳送至位於玻璃基板之另一側上的電路，同時防止TGV中的光阻劑包埋。
附加特徵及優點將於以下的實施方式中記載，並且部分地對於本領域熟知技術者而言從該實施方式將為顯而易見的，或藉由實踐本文所述的實施例而認知，本文包含以下的實施方式、申請專利範圍以及附圖。
應瞭解，前述一般性描述及以下實施方式兩者描述各種實施例，且欲提供用以瞭解申請標的之本質及特性的概要或架構。本文包含附圖以提供進一步瞭解各種實施例，且附圖併入此說明書中且構成此說明書之一部分。圖式繪示本文所述的各種實施例，且圖式與說明一起用以解釋申請標的之原理及操作。
現將詳細參照本揭示案之實施例，該等實施例之實例繪示於附圖中。在圖式各處將儘可能使用相同的元件符號來指稱相同或相似的部件。然而，此揭示案可以許多不同的形式來實現，並且不應被解釋為限於本文記載的實施例。
在本文中可將範圍表示為從「約」一個特定值，及/或至「約」另一個特定值。當表示如此的範圍時，另一個實施例包含從該個特定值及/或至該另一個特定值。類似地，當將數值表示為近似值時，藉由使用先行詞「約」，將理解該特定值形成另一個實施例。將進一步理解，每個範圍之端點關於另一個端點皆為有意義的並且獨立於該另一個端點。
本文使用的方向性用語──例如，上、下、右、左、前、後、頂部、底部、垂直、水平──僅為參照所繪製的圖式而作出，而不欲暗示絕對定向。
除非另外明確說明，否則本文記載的任何方法決不欲解釋為要求以特定順序實行該方法的步驟，亦無要求以任何設備、特定的定向來實行。因此，當方法請求項實際上並未敘述該方法的步驟所要遵循的順序時，或當任何設備請求項實際上並未敘述對個別部件的順序或定向時，或當在申請專利範圍或說明中並未另外特定說明步驟將限於特定的順序時，或當並未敘述對設備之部件之特定順序或定向時，決不欲在任何態樣中推斷順序或定向。此適用於用於解釋的任何可能的非明白表示依據，包含：關於步驟之安排、操作流程、部件之順序或部件之定向之邏輯事項；自語法組織或標點符號得到的簡單含義，以及；說明書中描述的實施例之數量或類型。
如本文使用的，除非上下文另有明確指示，否則單數形式「一(a)」、「一(an)」及「該(the)」包含複數指示物。因此，例如，除非上下文另有明確指示，否則對「一」部件的參照包含具有兩個或多於兩個上述部件的態樣。
現參照第1A圖~第1B圖，描繪示例性顯示器100。第1A圖繪示顯示器100之俯視圖且第1B圖繪示顯示器100之截面圖。顯示器100包含玻璃基板102、第一金屬化貫穿玻璃通孔(TGV)104、第二金屬化TGV 106、第一導線108、第二導線110、薄膜電子電路111、光源112、控制板130及電極132。玻璃基板102包含第一表面114及與第一表面114相對的第二表面116。玻璃基板102還包含在玻璃基板102之第一表面114與第二表面116之間延伸的側表面117、118、119及120。在一個實例中，第一表面114與第二表面116平行，且側表面117、118、119及120與玻璃基板102之第一表面114及第二表面116正交。
薄膜電子電路111可為薄膜電晶體(TFT)。TFT 111以列及行的陣列排列。每個TFT 111電耦合至光源112。每個光源112可為發光二極體(LED)，如微發光二極體(microLED)。microLED為小的（例如，通常小於約100 µm乘以約100 µm）發光部件。microLED為無機半導體部件，其產生高達約5000萬尼特(nit)的高亮度。因此，microLED特別適用於高解析度顯示器。每個TFT 111電耦合至第一導線108（例如，經由TFT之源極或汲極）及第二導線110（例如，經由TFT之閘極）。第二導線110佈置於第一導線108上方並且與第一導線108電絕緣。在此實例中，第二導線110與第一導線108正交，第一導線108在玻璃基板102之側表面117與側表面119之間延伸，第二導線110在玻璃基板102之側表面118與側表面120之間延伸。TFT 111、第一導線108及第二導線110形成在玻璃基板102之第一表面114上。每個光源112佈置在玻璃基板102之第一表面114上且與TFT 111電接觸（例如，經由TFT之汲極或源極）。未示出的平面電極可施加於每個光源112上方並且電耦合至每個光源112以提供共用電極(common electrode)。
每個第一導線108電耦合至第一金屬化TGV 104。在此實例中，金屬化TGV 104以與玻璃基板102之側表面117相鄰的列佈置而延伸穿過玻璃基板102。每個第二導線110電耦合至第二金屬化TGV 106。在此實例中，金屬化TGV 106於玻璃基板102之中心以行佈置而延伸穿過玻璃基板102。每個第一金屬化TGV 104及每個第二金屬化TGV 106提供延伸穿過玻璃基板102的電訊號路徑（例如，電接觸）。每個第一金屬化TGV 104及每個第二金屬化TGV 106經由控制板130之電極132電耦合至控制板130。在操作中，控制板130可個別控制每個TFT 111以個別控制每個光源112。
第2圖示意描繪示例性玻璃基板200。玻璃基板200包含第一表面202、與第一表面相對的第二表面204以及在第一表面202與第二表面204之間延伸的第三表面206。玻璃基板200還可包含在第一表面202與第二表面204之間延伸的第四表面208。在一個實例中，第一表面202與第二表面204平行，第三表面206及第四表面208與第一表面202及第二表面204正交。玻璃基板200可包含在第一表面202與第二表面204之間延伸的另外的側表面。例如，對於矩形玻璃基板，玻璃基板200可包含在第一表面202與第二表面204之間延伸、與第三表面206及第四表面208正交的第五表面及第六表面。在其他實例中，玻璃基板200可具有其他具相應數量的側表面的適合的形狀，如圓形、三角形、六邊形等。玻璃基板200可具有約0.1 mm與約0.63 mm之間的第一表面202與第二表面204之間的厚度或另一個適合的厚度。
第3圖示意描繪將第2圖之玻璃基板200雷射損傷之一個實例。經由雷射211產生的雷射束212將玻璃基板200損傷，以產生複數個雷射損傷區域210。每個雷射損傷區域210從玻璃基板200之第一表面202延伸至玻璃基板200之第二表面204。在一個實例中，雷射損傷區域210包含開放或中空微通道，其具有在約7 µm與約9 µm之間的直徑。在其他實例中，雷射損傷區域210包含破壞或中斷玻璃基板200之晶體結構的其他結構。在任何情況下，玻璃基板200之雷射損傷區域210以比玻璃基板200之未損傷區域更快的速率來蝕刻。
藉由用雷射211產生的雷射束212照射玻璃基板200之第一表面202來形成雷射損傷區域210。雷射束212可例如藉由透鏡213聚焦至玻璃基板200之第一表面202的約+/- 100 µm內的焦點。在某些示例性實施例中，對於玻璃基板200的厚度在約0.1 mm與約0.63 mm之間的範圍內，透鏡213具有在約0.1與約0.4之間的範圍內的數值孔徑。雷射211可以約50 kHz或更低的重複率來操作並且具有足夠的照射持續時間，以將雷射損傷區域210延伸至玻璃基板200之第二表面204。
在某些示例性實施例中，雷射211為二氧化碳雷射，其產生波長在約9 µm與約10.2 µm之間的雷射束212。在另一個實例中，雷射211為紫外(UV)雷射，其產生波長在約300 nm與約400 nm之間的UV雷射束212，如約355 nm（例如，摻雜釹的鎢酸釓鉀(Neodymium doped Potassium-Gadolinium Tungstate)或另一種摻雜Nd的雷射）。例如，雷射211可照射玻璃基板200之第一表面202對於每個雷射損傷區域210持續從約8毫秒至約150毫秒的範圍內的持續時間。每個雷射損傷區域210之特定照射持續時間取決於玻璃基板200之厚度。
雷射損傷區域210製備玻璃基板200用於如以下將描述的後續蝕刻製程，同時維持玻璃基板200之尺寸穩定性以用於在玻璃基板200上製造電子裝置。同時，由於在製造電子裝置之前TGV還沒有完全形成，因此防止由於微影製程在TGV中的光阻劑包埋。
第4圖示意描繪在第3圖之玻璃基板200之表面上形成電子裝置214之一個實例。電子裝置214製造於玻璃基板200之第一表面202上。在某些示例性實施例中，電子裝置214包含薄膜電子裝置，如TFT。可使用微影製程來製造電子裝置214，以形成電子裝置之導電及/或介電部分。例如，電子裝置214可包含先前參照第1A圖~第1B圖所述及繪示的第一導線108、第二導線110及TFT 111。電子裝置214參照雷射損傷區域210，使得開口216保留在電子裝置214之間而暴露出雷射損傷區域210。在另一個實例中，可在如參照第3圖所述的雷射損傷區域210形成之前將電子裝置214製造在第2圖之玻璃基板200上。
第5A圖示意描繪在電子裝置214及玻璃基板200上方施加保護性材料層218（例如，鈍化層）之後的示例性子組件。保護性材料層218施加在電子裝置214、玻璃基板200之第一表面202及玻璃基板200之側表面（包含玻璃基板200之第三表面206及第四表面208）上方。使用物理氣相沉積(PVD)或另一個適合的沉積製程將保護性材料層218沉積至電子裝置214及玻璃基板200上。在某些示例性實施例中，在沉積製程期間使用遮罩製程以維持開口216暴露出雷射損傷區域210。在另一個實例中，在沉積製程之後移除雷射損傷區域210上方的保護性材料以產生開口216。保護性材料層218可例如包含樹脂材料、聚醯亞胺(polyimide)材料、丙烯酸(acrylic)材料、無機材料或另一個適合的鈍化材料。保護性材料層218可具有在約1 µm與約50 µm之間的範圍內的厚度。保護性材料層218在從約100°C至約300°C的範圍內具有適合的耐酸性及適合的熱穩定性。
在如以下將所述的雷射損傷區域210之蝕刻期間，保護性材料層218保護電子裝置214以及包含第三表面206及第四表面208的玻璃基板200之側表面。例如，在先前參照第1A圖~第1B圖所述及繪示的顯示裝置100之製造期間，在蝕刻雷射損傷區域以提供TGV之前，可藉由保護性材料層覆蓋第一導線108、第二導線110、TFT 111以及玻璃基板102之側表面117、118、119及120，然後該等雷射損傷區域被填充以提供第一金屬化TGV 104及第二金屬化TGV 106。藉由保護玻璃基板200之側表面，防止側表面之橫向蝕刻，因此維持用於無邊框(bezel-less)顯示器（如利用microLED的顯示器）的側表面附近的電子裝置214之品質。
第5B圖示意描繪在電子裝置214及玻璃基板200上方施加保護性材料層218之後的子組件之另一個實例。此實例類似於第5A圖中繪示的實例，除了在此實例中，保護性材料層214亦沉積在玻璃基板200之第二表面204上方。在某些示例性實施例中，在沉積製程期間使用遮罩製程以產生開口220，在玻璃基板200之第二表面204處暴露出雷射損傷區域210。在另一個實例中，在沉積製程之後移除雷射損傷區域210下方的保護性材料以產生開口220。
第6圖示意描繪第5A圖之子組件在形成TGV 222之後之示例性實施例。蝕刻雷射損傷區域210以提供TGV 222。在某些示例性實施例中，濕式蝕刻（例如，酸浴）用於蝕刻雷射損傷區域210。濕式蝕刻可例如包含氟化氫與硝酸的溶液（例如，20% HF+10% HNO3 的體積水溶液）。可基於蝕刻浴之溫度及濃度來調節蝕刻速率。蝕刻參數（例如，酸濃度、蝕刻劑配方、蝕刻持續時間、溶液之溫度）決定TGV 222之直徑及形狀。在此實例中，選擇蝕刻參數以提供實質上圓柱形的TGV 222。TGV 222可例如具有約25 µm與約100 µm之間的直徑。在其他實例中，可使用噴蝕刻(spray etch)或乾式蝕刻來蝕刻雷射損傷區域210。
第7圖示意描繪第6圖之子組件在TGV 222金屬化之後之示例性實施例。將TGV 222金屬化以提供從玻璃基板200之第一表面202延伸至玻璃基板200之第二表面204的金屬化TGV 224。金屬化TGV 224提供耦合至電子裝置214的電訊號路徑（例如，電觸點）。在某些示例性實施例中，藉由使用金屬有機化學氣相沉積(MOCVD)沉積共形銅種晶層來準備TGV電鍍，來將TGV 222金屬化。例如，種晶層可在整個TGV 222中沉積至約0.75 µm的厚度。然後可使用Cu之電鍍來完全填充TGV 222以提供金屬化TGV 224。在其他實例中，TGV 222可經由電鍍或另一個適合的製程來填充除Cu以外的導電材料。
第8圖示意描繪第7圖之子組件在玻璃基板200之第二表面204上形成電子裝置226之後之示例性實施例。電子裝置226可例如包含將金屬化TGV 224彼此電耦合的導線、薄膜電子電路或其他適合的電子裝置。在其他實例中，可排除電子裝置226。
第9圖示意描繪第8圖之子組件在移除保護性材料層218之後之示例性實施例。例如，可使用蝕刻製程或另一個適合的製程移除保護性材料層218，以暴露出電子裝置214及包含玻璃基板200之第三表面206及第四表面208的玻璃基板200之側表面。在某些示例性實施例中，第9圖之子組件可用作電子裝置之玻璃部件，如中介層。在另一個實例中，光源可電耦合至每個電子裝置214，並且每個金屬化TGV 224可電耦合至控制板以提供顯示裝置，如第1A圖~第1B圖之顯示裝置100。
對於本領域熟知技術者而言將為顯而易見的是，可在不脫離本揭示案之精神及範疇的情況下對本揭示案之實施例作各種修改及變異。因此，預期本揭示案涵蓋上述修改及變異，只要上述修改及變異在所附申請專利範圍及其均等物之範疇內。
100‧‧‧顯示器
102‧‧‧玻璃基板
104‧‧‧第一金屬化TGV
106‧‧‧第二金屬化TGV
108‧‧‧第一導線
110‧‧‧第二導線
111‧‧‧薄膜電子電路/TFT
112‧‧‧光源
114‧‧‧第一表面
116‧‧‧第二表面
117‧‧‧側表面
118‧‧‧側表面
119‧‧‧側表面
120‧‧‧側表面
130‧‧‧控制板
132‧‧‧電極
200‧‧‧玻璃基板
202‧‧‧第一表面
204‧‧‧第二表面
206‧‧‧第三表面
208‧‧‧第四表面
210‧‧‧雷射損傷區域
211‧‧‧雷射
212‧‧‧雷射束
213‧‧‧透鏡
214‧‧‧電子裝置
216‧‧‧開口
218‧‧‧保護性材料層
220‧‧‧開口
222‧‧‧TGV
224‧‧‧金屬化TGV
226‧‧‧電子裝置
第1A圖~第1B圖示意描繪顯示器之一個實例；
第2圖示意描繪玻璃基板之一個實例；
第3圖示意描繪將第2圖之玻璃基板雷射損傷之一個實例；
第4圖示意描繪在第3圖之玻璃基板之頂表面上形成電子裝置之一個實例；
第5A圖~第5B圖示意描繪在第4圖之電子裝置及玻璃基板上方施加保護性材料層之後的子組件之實例；
第6圖示意描繪第5A圖之子組件在形成貫穿玻璃通孔(TGV)之後之一個實例；
第7圖示意描繪第6圖之子組件在將TGV金屬化之後之一個實例；
第8圖示意描繪第7圖之子組件在玻璃基板之底部表面上形成電子裝置之後之一個實例；及
第9圖示意描繪第8圖之子組件在移除保護性材料層之後之一個實例。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記)
無

Claims (20)

  1. 一種子組件，包括： 一玻璃基板，包括一第一表面、與該第一表面相對的一第二表面以及在該第一表面與該第二表面之間延伸的一第三表面，該玻璃基板包括從該第一表面延伸至該第二表面的複數個雷射損傷區域；複數個電子裝置，於該玻璃基板之該第一表面上；及一鈍化層，於該複數個電子裝置及該玻璃基板之該第三表面上，該鈍化層包括至該複數個雷射損傷區域中之每個雷射損傷區域的一開口。
  2. 如請求項1所述之子組件，其中該鈍化層於該玻璃基板之該第二表面上。
  3. 如請求項1所述之子組件，其中該複數個雷射損傷區域經配置為被蝕刻以賦予複數個相應的貫穿玻璃通孔。
  4. 如請求項1所述之子組件，其中該鈍化層包括一樹脂材料、一聚醯亞胺(polyimide)材料、一丙烯酸(acrylic)材料及一無機材料中之一者。
  5. 如請求項1所述之子組件，其中該鈍化層具有在1 µm與50 µm之間的一厚度。
  6. 如請求項1所述之子組件，其中該複數個電子裝置包括複數個薄膜電子裝置。
  7. 如請求項1所述之子組件，進一步包括： 複數個電子裝置，於該玻璃基板之該第二表面上。
  8. 一種用於製造一玻璃部件的方法，該方法包括以下步驟： 將一玻璃基板雷射損傷，以產生從該玻璃基板之一第一表面延伸至該玻璃基板之一第二表面的複數個雷射損傷區域，該第二表面與該第一表面相對； 於該玻璃基板之該第一表面上製造複數個電子裝置； 於該複數個電子裝置及該玻璃基板之一第三表面上方施加一保護性材料，該第三表面於該玻璃基板之該第一表面與該第二表面之間延伸；及 蝕刻該複數個雷射損傷區域以賦予相應的複數個貫穿玻璃通孔。
  9. 如請求項8所述之方法，進一步包括以下步驟： 將該複數個貫穿玻璃通孔金屬化以產生從該玻璃基板之該第一表面延伸至該第二表面的相應的複數個電訊號路徑。
  10. 如請求項9所述之方法，進一步包括以下步驟： 移除該保護性材料。
  11. 如請求項8所述之方法，其中蝕刻該複數個雷射損傷區域的步驟包括以下步驟：濕式蝕刻該複數個雷射損傷區域。
  12. 如請求項8所述之方法，進一步包括以下步驟： 在該玻璃基板之該第二表面上製造複數個電子裝置。
  13. 如請求項8所述之方法，其中雷射損傷該玻璃基板的步驟在於該玻璃基板之該第一表面上製造該複數個電子裝置的步驟之前。
  14. 如請求項8所述之方法，其中施加該保護性材料的步驟包括以下步驟：施加一樹脂材料、一聚醯亞胺材料、一丙烯酸材料及一無機材料中之一者。
  15. 如請求項8所述之方法，其中施加該保護性材料的步驟包括以下步驟：施加該保護性材料達在1 µm與50 µm之間的一厚度。
  16. 如請求項8所述之方法，其中將該玻璃基板雷射損傷的步驟包括以下步驟：藉由一波長在9 µm與10.2 µm之間的一二氧化碳(carbon dioxide)雷射照射該玻璃基板。
  17. 如請求項8所述之方法，其中將該玻璃基板雷射損傷的步驟包括以下步驟：藉由一波長在300 nm與400 nm之間的一紫外雷射照射該玻璃基板。
  18. 一種用於製造一顯示器的方法，該方法包括以下步驟： 將一玻璃基板雷射損傷，以產生從該玻璃基板之一第一表面延伸至該玻璃基板之一第二表面的複數個雷射損傷區域，該第二表面與該第一表面相對； 於該玻璃基板之該第一表面上製造一薄膜電晶體之陣列； 於該薄膜電晶體之陣列上方及於該玻璃基板之一第三表面上方施加一保護性材料，該第三表面於該玻璃基板之該第一表面與該第二表面之間延伸； 蝕刻該複數個雷射損傷區域以賦予相應的複數個貫穿玻璃通孔； 將該複數個貫穿玻璃通孔金屬化以產生相應的複數個電觸點，該等電觸點延伸穿過該玻璃基板並且耦合至該薄膜電晶體之陣列；及 移除該保護性材料。
  19. 如請求項18所述之方法，進一步包括以下步驟： 將每個電觸點電耦合至一控制板。
  20. 如請求項18所述之方法，進一步包括以下步驟： 將一光源電耦合至該薄膜電晶體之陣列之每個薄膜電晶體。
TW107137969A 2017-10-27 2018-10-26 使用保護性材料的貫穿玻璃通孔的製造 TWI798279B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762578109P 2017-10-27 2017-10-27
US62/578,109 2017-10-27

Publications (2)

Publication Number Publication Date
TW201940449A true TW201940449A (zh) 2019-10-16
TWI798279B TWI798279B (zh) 2023-04-11

Family

ID=66247633

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107137969A TWI798279B (zh) 2017-10-27 2018-10-26 使用保護性材料的貫穿玻璃通孔的製造

Country Status (6)

Country Link
US (1) US11654657B2 (zh)
JP (1) JP7210573B2 (zh)
KR (1) KR102487611B1 (zh)
CN (1) CN111356664B (zh)
TW (1) TWI798279B (zh)
WO (1) WO2019084077A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111799169B (zh) * 2020-07-17 2024-05-28 绍兴同芯成集成电路有限公司 一种飞秒激光结合hf湿蚀刻加工tgv的工艺
CN114267683A (zh) * 2020-09-15 2022-04-01 京东方科技集团股份有限公司 一种显示背板及其制备方法、显示装置
KR20230098828A (ko) * 2020-11-16 2023-07-04 니폰 덴키 가라스 가부시키가이샤 유리 기판
KR20220090662A (ko) * 2020-12-22 2022-06-30 삼성디스플레이 주식회사 표시 장치의 제조 방법
WO2023287569A1 (en) * 2021-07-13 2023-01-19 Corning Incorporated Vias including a plurality of traces, devices including the vias, and methods for fabricating the vias

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW499605B (en) 2000-10-27 2002-08-21 Acer Display Tech Inc Manufacture method of thin film transistor flat panel display
JP4075042B2 (ja) * 2001-07-10 2008-04-16 セイコーエプソン株式会社 半導体装置の製造方法およびこの方法で得られる半導体装置
KR100558985B1 (ko) * 2003-06-27 2006-03-10 엘지.필립스 엘시디 주식회사 액정 표시 장치용 어레이 기판의 제조 방법
US6990285B2 (en) 2003-07-31 2006-01-24 Corning Incorporated Method of making at least one hole in a transparent body and devices made by this method
US7772115B2 (en) 2005-09-01 2010-08-10 Micron Technology, Inc. Methods for forming through-wafer interconnects, intermediate structures so formed, and devices and systems having at least one solder dam structure
JP4775829B2 (ja) 2009-04-03 2011-09-21 株式会社Ｎｓｃ 電子装置用ガラス基板及び電子装置の製造方法
US8411459B2 (en) 2010-06-10 2013-04-02 Taiwan Semiconductor Manufacturing Company, Ltd Interposer-on-glass package structures
CN103119703B (zh) 2010-09-23 2016-01-20 高通Mems科技公司 集成的无源器件和功率放大器
CN106425129B (zh) 2010-11-30 2018-07-17 康宁股份有限公司 在玻璃中形成高密度孔阵列的方法
US20130050228A1 (en) 2011-08-30 2013-02-28 Qualcomm Mems Technologies, Inc. Glass as a substrate material and a final package for mems and ic devices
US20130050227A1 (en) 2011-08-30 2013-02-28 Qualcomm Mems Technologies, Inc. Glass as a substrate material and a final package for mems and ic devices
US20130050226A1 (en) 2011-08-30 2013-02-28 Qualcomm Mems Technologies, Inc. Die-cut through-glass via and methods for forming same
KR101391774B1 (ko) 2012-03-13 2014-05-07 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 이용한 유기전계발광표시장치의 제조방법
US20140035935A1 (en) 2012-08-03 2014-02-06 Qualcomm Mems Technologies, Inc. Passives via bar
KR102157750B1 (ko) 2012-11-29 2020-09-21 코닝 인코포레이티드 레이저 손상 및 에칭에 의한 유리 제품의 제조방법
US9130016B2 (en) 2013-04-15 2015-09-08 Schott Corporation Method of manufacturing through-glass vias
KR102089074B1 (ko) * 2013-11-07 2020-03-13 엘지디스플레이 주식회사 표시패널용 어레이 기판 및 그 제조방법
US9530801B2 (en) * 2014-01-13 2016-12-27 Apple Inc. Display circuitry with improved transmittance and reduced coupling capacitance
JP2015211162A (ja) 2014-04-28 2015-11-24 旭硝子株式会社 ガラス部材の製造方法、ガラス部材、およびガラスインターポーザ
US9105615B1 (en) 2014-06-12 2015-08-11 Amazon Technologies, Inc. Substrate vias for a display device
US10276368B2 (en) * 2014-10-03 2019-04-30 Nippon Sheet Glass Company, Limited Method for producing glass substrate with through glass vias and glass substrate
JP2018509365A (ja) * 2015-02-27 2018-04-05 コーニング インコーポレイテッド レーザ損傷及びエッチングによってガラス物品にチャネルを製造する方法並びにそれによって作製される物品
US20180105455A1 (en) 2016-10-17 2018-04-19 Corning Incorporated Silica test probe and other such devices

Also Published As

Publication number Publication date
US20210187910A1 (en) 2021-06-24
CN111356664A (zh) 2020-06-30
US11654657B2 (en) 2023-05-23
JP2021501990A (ja) 2021-01-21
TWI798279B (zh) 2023-04-11
WO2019084077A1 (en) 2019-05-02
JP7210573B2 (ja) 2023-01-23
CN111356664B (zh) 2022-09-27
KR20200074196A (ko) 2020-06-24
KR102487611B1 (ko) 2023-01-11

Similar Documents

Publication Publication Date Title
TWI798279B (zh) 使用保護性材料的貫穿玻璃通孔的製造
CN105102177B (zh) 在基板上引入穿孔的方法和装置以及以这种方式制造的基板
TWI624530B (zh) Etchant composition
TW201907552A (zh) 包括穿透孔洞貫孔的組件基板及其製作方法
CN100411100C (zh) 膜图案的形成方法和有源矩阵基板的制造方法
JP2007243192A (ja) 電子装置の製造方法及びエンボス加工具
US10236279B2 (en) Emissive display with light management system
CN107845741B (zh) 柔性基板剥离方法及柔性基板
CN103882374A (zh) 掩膜版、有机层加工方法、显示基板制备方法
KR20180100386A (ko) 플랙시블 기판의 스트립핑 방법
CN104678671B (zh) 显示基板及其制造方法和显示装置
CN110137083B (zh) 阵列基板及其制备方法
KR20060020575A (ko) 다결정 ｉｔｏ 필름 및 다결정 ｉｔｏ 전극의 제조 방법
KR20030095261A (ko) 전계발광 소자용 밀봉판 및 다면 밀봉판 제조용 마더 유리기판
JP2022512609A (ja) 埋込サイド電極を備えたディスプレイを形成するためのシステムおよび方法
TWI751794B (zh) 觸控感測模組與形成其之方法
KR20190003025A (ko) 유리회로기판 및 그 제조방법
CN109216266B (zh) 过孔的制作方法、阵列基板的制作方法及阵列基板
WO2021220890A1 (ja) 貫通孔を有するガラス基板製造方法および表示装置製造方法
CN107247376B (zh) Tft基板的制作方法及液晶显示装置的制作方法
US20140154463A1 (en) Substrate structure and manufacturing method thereof
US20220344554A1 (en) Backplane, backlight source, display device and manufacturing method of backplane
TW202125769A (zh) 用於降低通孔形成對於電子裝置形成的影響的系統及方法
CN106848086B (zh) 有机发光二极管及其制备方法、显示装置
JP2007027729A (ja) 駆動集積回路及びその製造方法並びに表示装置及び表示装置の画質を向上させる方法