TW201936716A - 撓性裝置基板形成用聚醯亞胺前驅物樹脂組成物 - Google Patents

撓性裝置基板形成用聚醯亞胺前驅物樹脂組成物 Download PDF

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Publication number
TW201936716A
TW201936716A TW107147621A TW107147621A TW201936716A TW 201936716 A TW201936716 A TW 201936716A TW 107147621 A TW107147621 A TW 107147621A TW 107147621 A TW107147621 A TW 107147621A TW 201936716 A TW201936716 A TW 201936716A
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Taiwan
Prior art keywords
flexible device
resin composition
precursor resin
device substrate
carboxylic acid
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TW107147621A
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English (en)
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三浦則男
成田一貴
中山剛成
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日商宇部興產股份有限公司
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Publication of TW201936716A publication Critical patent/TW201936716A/zh

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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/32Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0209Multistage baking
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/1055Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
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    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/42Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating of an organic material and at least one non-metal coating
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003Preparatory processes
    • C08G73/1007Preparatory processes from tetracarboxylic acids or derivatives and diamines
    • C08G73/101Preparatory processes from tetracarboxylic acids or derivatives and diamines containing chain terminating or branching agents
    • C08G73/1014Preparatory processes from tetracarboxylic acids or derivatives and diamines containing chain terminating or branching agents in the form of (mono)anhydrid
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003Preparatory processes
    • C08G73/1007Preparatory processes from tetracarboxylic acids or derivatives and diamines
    • C08G73/1028Preparatory processes from tetracarboxylic acids or derivatives and diamines characterised by the process itself, e.g. steps, continuous
    • CCHEMISTRY; METALLURGY
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    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C08G73/1071Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
    • CCHEMISTRY; METALLURGY
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    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/12Unsaturated polyimide precursors
    • C08G73/121Preparatory processes from unsaturated precursors and polyamines
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    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/12Unsaturated polyimide precursors
    • C08G73/128Unsaturated polyimide precursors the unsaturated precursors containing heterocyclic moieties in the main chain
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    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09D179/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C09D179/085Unsaturated polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/401Oxides containing silicon
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651Silicon transistors
    • H01L29/7866Non-monocrystalline silicon transistors
    • H01L29/78663Amorphous silicon transistors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/002Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005Spin coating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2203/00Other substrates
    • B05D2203/30Other inorganic substrates, e.g. ceramics, silicon
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2203/00Other substrates
    • B05D2203/30Other inorganic substrates, e.g. ceramics, silicon
    • B05D2203/35Glass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2505/00Polyamides
    • B05D2505/50Polyimides
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/10Deposition methods
    • C03C2218/11Deposition methods from solutions or suspensions
    • C03C2218/116Deposition methods from solutions or suspensions by spin-coating, centrifugation
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
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    • C03C2218/00Methods for coating glass
    • C03C2218/10Deposition methods
    • C03C2218/15Deposition methods from the vapour phase
    • C03C2218/152Deposition methods from the vapour phase by cvd
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133305Flexible substrates, e.g. plastics, organic film
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate

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Abstract

本發明係關於一種用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物,其包含聚醯胺酸,該聚醯胺酸具有由包含3,3’,4,4’-聯苯四羧酸二酐及苯均四酸二酐之至少一者的四羧酸成分、包含對苯二胺及4,4’-二胺二苯醚之至少一者的二胺成分及羧酸單酐所得之結構,而該四羧酸成分、該二胺成分及該羧酸單酐滿足下式(1)及下式(2)。 式(1)  0.97≦X/Y<1.00 式(2)  0.5≦(Z/2)/(Y-X)≦1.05 (式中,X表示該四羧酸成分的莫耳數,Y表示該二胺成分的莫耳數,Z表示該羧酸單酐的莫耳數)。

Description

撓性裝置基板形成用聚醯亞胺前驅物樹脂組成物
本發明係關於用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物、使用其之積層體及撓性裝置、以及積層體的製造方法。
以往,使用液晶顯示元件或有機EL顯示元件的平板顯示器等的電子裝置中就開始使用玻璃基板,但玻璃若為了輕量化而進行薄膜化,則會有強度不足而容易損壞這樣的問題。作為玻璃基板的代替,開發出輕量且撓性優良的塑膠基板,將使用該塑膠基板的撓性裝置被應用於各種用途的發展備受期待。作為容易輕量化或薄膜化之樹脂材料的聚醯亞胺,其適用於塑膠基板,且已提出有各種聚醯亞胺。
一般撓性裝置的製造中,首先係在玻璃等的載持基板上形成聚醯亞胺膜,來製作撓性裝置基板。又,亦有在聚醯亞胺膜上進一步形成屏障層及聚醯亞胺膜,以製作撓性裝置基板的情況。在如此所得之撓性裝置基板上製作TFT等半導體元件。這樣的步驟中,要求聚醯亞胺膜穩固積層於載持基板或屏障層上。又,亦要求聚醯亞胺膜具有高耐熱性,以可承受裝置製造時的高溫條件。
專利文獻1及2中提出聚醯亞胺膜與載持基板的積層體之製造方法。專利文獻3及4中提出為了改善支持體與聚醯亞胺膜的接著性,而添加烷氧基矽烷化合物,或使其反應的聚醯亞胺前驅物。專利文獻5中提出以矽烷偶合劑處理載持基板的技術。
另一方面,藉由將聚醯亞胺改質而改善聚醯亞胺之特性的方法已為人所知。專利文獻6中提出以酸單酐將末端改質的聚醯胺酸。專利文獻7中提出以芳香族二羧酸酐將末端改質的聚醯胺酸。 [先前技術文獻] [專利文獻]
[專利文獻1]日本專利第5650458號公報 [專利文獻2]日本專利第6206446號公報 [專利文獻3]國際公開第2013/125194號 [專利文獻4]國際公開第2016/024457號 [專利文獻5]日本專利第5862866號公報 [專利文獻6]日本專利第4853534號公報 [專利文獻7]國際公開第2017/204186號
[發明所欲解決之課題]
專利文獻1及2記載的聚醯亞胺膜,對於載持基板的接著力低,具有容易發生剝離的問題。專利文獻3~5記載的聚醯亞胺前驅物溶液缺乏穩定性,所得之聚醯亞胺膜沒有能夠承受裝置製造時之高溫條件的接著性,而且有損撓性裝置的可靠度。
專利文獻6記載的聚醯胺酸,雖黏度穩定性及醯亞胺化時的機械強度及強韌性有所提升,但並未改善剝離強度。專利文獻7記載的聚醯亞胺膜,並非撓性裝置基板,而是作為玻璃基板的剝離層使用。當然,撓性裝置基板與剝離層所要求的物性及其基準大不相同。
撓性裝置基板中所使用的聚醯亞胺膜,要求改善對於載持基板的剝離強度。本發明之目的係提供一種用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物,其可得到確保作為撓性裝置用途所要求的機械物性、並且對於基板具有高剝離強度的聚醯亞胺膜。 [解決課題之手段]
本發明關於以下的事項。 1. 一種用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物,其包含聚醯胺酸,該聚醯胺酸具有由包含3,3’,4,4’-聯苯四羧酸二酐及苯均四酸二酐之至少一者的四羧酸成分、包含對苯二胺及4,4’-二胺二苯醚之至少一者的二胺成分以及羧酸單酐所得之結構,而該四羧酸成分、該二胺成分及該羧酸單酐滿足下式(1)及下式(2)。
式(1)  0.97≦X/Y<1.00 式(2)  0.5≦(Z/2)/(Y-X)≦1.05 (式中,X表示該四羧酸成分的莫耳數,Y表示該二胺成分的莫耳數,Z表示該羧酸單酐的莫耳數) 2. 如第1項之用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物,其中3,3’,4,4’-聯苯四羧酸二酐的含量為該四羧酸成分的40莫耳%以上。 3. 如第1或2項之用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物,其中對苯二胺的含量為該二胺成分的40莫耳%以上。 4. 如第1至3項中任1項之用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物,其中該羧酸單酐為苯二甲酸酐或馬來酸酐。 5. 一種積層體,包含:由如第1至4項中任1項之用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物所得之聚醯亞胺膜與玻璃基板。 6. 一種撓性裝置基板,包含:由如第1至4項中任1項之用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物所得之聚醯亞胺膜。 7. 一種撓性裝置基板,包含由如第1至4項中任1項之用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物所得之聚醯亞胺膜及選自氮化矽、氧化矽、氧氮化矽、氧化鋁、氧化鈦及氧化鋯所構成之群組的無機膜。 8. 一種撓性裝置,其係在如第6或7項之撓性裝置基板上搭載TFT。 9. 一種積層體的製造方法,其包含將包含聚醯胺酸的用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物流延於基板上的步驟;及藉由加熱處理使該聚醯胺酸進行醯亞胺化而形成聚醯亞胺膜之步驟 該聚醯胺酸,係具有由包含3,3’,4,4’-聯苯四羧酸二酐及苯均四酸二酐之至少一者的四羧酸成分、包含對苯二胺及4,4’-二胺二苯醚之至少一者的二胺成分以及羧酸單酐所得之結構的聚醯胺酸,而該四羧酸成分、該二胺成分及該羧酸單酐滿足下式(1)及下式(2)。
式(1)  0.97≦X/Y<1.00 式(2)  0.5≦(Z/2)/(Y-X)≦1.05 (式中,X表示該四羧酸成分的莫耳數,Y表示該二胺成分的莫耳數,Z表示該羧酸單酐的莫耳數)。 [發明之效果]
根據本發明,可提供一種用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物,其可得到確保作為撓性裝置用途所要求之機械物性、並且對於基板具有高剝離強度的聚醯亞胺膜。由本發明之用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物所得之聚醯亞胺膜,較佳可用於撓性裝置基板。再者,本發明的用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物的黏度穩定性提升,而可提升撓性裝置的可靠度。
聚醯胺酸具有由四羧酸成分、二胺成分及羧酸單酐所得之結構;該四羧酸成分包含3,3’,4,4’-聯苯四羧酸二酐及苯均四酸二酐之至少一者,該二胺成分包含對苯二胺及4,4’-二胺二苯醚之至少一者。具有該結構的聚醯胺酸的主鏈,係包含3,3’,4,4’-聯苯四羧酸二酐及苯均四酸二酐之至少一者的四羧酸成分,與包含對苯二胺及4,4’-二胺二苯醚之至少一者的二胺成分的聚合物,至少一部分的聚醯胺酸中,主鏈末端被羧酸單酐封端。
從耐熱性、尺寸變化率、聚醯胺酸的黏度穩定性的觀點來看,四羧酸成分中的3,3’,4,4’-聯苯四羧酸二酐的量較佳為40莫耳%以上、更佳為60莫耳%以上、再佳為80莫耳%以上、亦可為100莫耳%。四羧酸成分中的苯均四酸二酐的量較佳為5莫耳%以上、更佳為10莫耳%以上。四羧酸成分中的苯均四酸二酐的量較佳為40莫耳%以下、更佳為20莫耳%以下。又,四羧酸成分中的3,3’,4,4’-聯苯四羧酸二酐及苯均四酸二酐的總量較佳為40莫耳%以上、更佳為60莫耳%以上、再佳為80莫耳%以上、亦可為100莫耳%。
從耐熱性、尺寸變化率的觀點來看,二胺成分中的對苯二胺的量較佳為40莫耳%以上、更佳為60莫耳%以上、再佳為80莫耳%以上、亦可為100莫耳%。二胺成分中的4,4’-二胺二苯醚的量較佳為5莫耳%以上、更佳為10莫耳%以上。二胺成分中的4,4’-二胺二苯醚的量較佳為60莫耳%以下、更佳為40莫耳%以下、特佳為20莫耳%以下。一實施態樣中,二胺成分亦可由對苯二胺及/或4,4’-二胺二苯醚所構成。又,二胺成分中的對苯二胺及4,4’-二胺二苯醚的總量較佳為40莫耳%以上、更佳為60莫耳%以上、再佳為80莫耳%以上、亦可為100莫耳%。
再者,在不損及本發明之特性的範圍內,可使用其他四羧酸二酐及二胺。
追加的四羧酸二酐並未特別限定,從所得之聚醯亞胺的特性來看,較佳為芳香族四羧酸二酐、脂環式四羧酸二酐。例如,較佳可列舉:2,3,3’,4’-聯苯四羧酸二酐、2,2’,3,3’-聯苯四羧酸二酐、3,3’,4,4’-二苯甲酮四羧酸二酐、氧基二苯二甲酸二酐、二苯碸四羧酸二酐、對聯三苯基四羧酸二酐、間聯三苯基四羧酸二酐、環丁烷-1,2,3,4-四羧酸二酐、1,2,4,5-環己烷四羧酸二酐等。前述四羧酸二酐不必僅為一種,即使為多種的混合物亦無妨。
作為追加的二胺,並未特別限定,可列舉:4,4’-二胺基二苯甲烷、間苯二胺、2,4-二胺基甲苯、1,3-雙(4-胺基苯氧基)苯、1,4-雙(4-胺基苯氧基)苯、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、間苯二甲基二胺、對苯二甲基二胺、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、4,4’-亞甲基雙(2,6-二甲苯胺)、α,α’-雙(4-胺基苯基)-1,4-二異丙基苯等的芳香族二胺、六亞甲基二胺、七亞甲基二胺、八亞甲基二胺、九亞甲基二胺、十亞甲基二胺、二胺基丙基四亞甲基、3-甲基七亞甲基二胺、2,11-二胺基十二烷、1,12-二胺基十八烷等的脂肪族二胺。前述的二胺不必僅為一種,即使為多種的混合物亦無妨。
羧酸單酐,係用於封端由四羧酸成分與二胺成分反應所得之聚醯胺酸。被羧酸單酐所封端的聚醯亞胺膜,與載持基板或屏障層的接著性優良。又,將被羧酸單酐封端的聚醯亞胺膜使用於撓性裝置基板的情況,亦具有可改善所製作之撓性裝置的可靠度及電特性的情況。羧酸單酐並未特別限定,可為芳香族羧酸單酐,亦可為脂肪族羧酸單酐。特別是芳香族羧酸單酐較佳。又,特定的用途中,羧酸單酐較佳為不包含羥基、羰基、羧基、胺基等的其他官能基,例如,較佳為二羧酸單酐。芳香族羧酸單酐,較佳係具有碳數6~30的芳香環、更佳係具有碳數6~15的芳香環、再佳為具有碳數6~10的芳香環。
作為羧酸單酐,例如,可列舉:苯二甲酸酐、2,3-二苯甲酮二羧酸酐、3,4-二苯甲酮二羧酸酐、1,2-萘二羧酸酐、2,3-萘二羧酸酐、1,8-萘二羧酸酐、1,2-蒽二羧酸酐、2,3-蒽二羧酸酐、1,9-蒽二羧酸酐、苯偏三酸酐等的芳香族羧酸單酐、及馬來酸酐、琥珀酸酐、四氫苯二甲酸酐、六氫苯二甲酸酐、伊康酸酐等的脂環式羧酸單酐。該等之中,較佳為苯二甲酸酐。又,羧酸單酐,亦可為具有乙炔基的羧酸單酐,例如苯乙炔基苯二甲酸酐。特定用途中,較佳係具有乙炔基的羧酸單酐。另一方面,具有聚醯亞胺的耐熱性會因為乙炔基而降低的情況,在特定用途中,較佳係不含具有乙炔基的羧酸單酐。
四羧酸成分、二胺成分及羧酸單酐的各莫耳比例滿足下式(1)及(2)。
式(1)  0.97≦X/Y<1.00 式(2)  0.5≦(Z/2)/(Y-X)≦1.05 (式中,X表示四羧酸成分的莫耳數,Y表示二胺成分的莫耳數,Z表示羧酸單酐的莫耳數)
藉由使X/Y為0.97以上,增加聚醯胺酸的分子量,提升所得之聚醯亞胺膜的強度及耐熱性。X/Y較佳為0.98以上。X/Y小於1.00的情況中,相對於四羧酸成分,二胺成分過剩。藉此,可形成被羧酸單酐封端的胺基。X/Y較佳為0.99以下。
又,(Z/2)/(Y-X)表示羧酸單酐與可封端之胺基的莫耳比。藉由使X/Y小於1.00、使(Z/2)/(Y-X)在0.5以上,可提升聚醯胺酸的封端率,而可提升所得之聚醯亞胺膜的接著力。(Z/2)/(Y-X)越接近1越佳。(Z/2)/(Y-X)較佳為0.6以上、更佳為0.7以上。藉由使(Z/2)/(Y-X)為1.05以下,可降低遊離的羧酸單酐的量,提高所得之聚醯亞胺膜的強度。(Z/2)/(Y-X)較佳為1.03以下,更佳為1.01以下。
如此,藉由滿足上述式(1)及式(2),可得到不會損及撓性裝置用途中所要求的機械物性、且相對於基板發揮高剝離強度的聚醯亞胺膜。
本發明中,聚醯胺酸的對數黏度並未特別限定,但在30℃下的濃度0.5g/dL之N-甲基-2-吡咯啶酮溶液中的對數黏度為0.2dL/g以上、較佳為0.4dL/g以上。對數黏度若在0.2dL/g以上,聚醯胺酸的分子量高,所得之聚醯亞胺的機械強度及耐熱性優良。在30℃下的濃度0.5g/dL之N-甲基-2-吡咯啶酮溶液中的對數黏度一般係在4.0dL/g以下。
聚醯亞胺前驅物樹脂組成物中,亦可因應需求添加醯亞胺化觸媒、含有機磷之化合物、無機微粒子等。
作為醯亞胺化觸媒,可列舉取代或非取代的含氮雜環化合物、該含氮雜環化合物的N-氧化物化合物、取代或非取代的胺基氧化合物、具有羥基的芳香族烴化物或芳香族雜環狀化合物,特佳可使用1,2-二甲基咪唑、N-甲基咪唑、N-苄基-2-甲基咪唑、2-甲基咪唑、2-乙基-4-甲基咪唑、5-甲基苯并咪唑等的低級烷基咪唑、N-苄基-2-甲基咪唑等的苯并咪唑、異喹啉、3,5-二甲基吡啶、3,4-二甲基吡啶、2,5-二甲基吡啶、2,4-二甲基吡啶、4-正丙基吡啶等的取代吡啶等。醯亞胺化觸媒的使用量,相對於聚醯胺酸的醯胺酸單元為0.01~2倍當量,特佳為0.02~1倍當量左右。藉由使用醯亞胺化觸媒,可提升所得之聚醯亞胺膜的物性,特別是拉伸及邊緣裂縫電阻。
作為含有機磷之化合物,例如,可列舉:磷酸單己醯酯、磷酸單辛酯、磷酸單月桂酯、磷酸單肉豆蔻酯、磷酸單鯨蠟酯、磷酸單硬脂醯酯、三乙二醇單十三醚的單磷酸酯、四乙二醇單月桂醚的單磷酸酯、二乙二醇單硬脂醯醚的單磷酸酯、磷酸二己醯酯、磷酸二辛酯、磷酸二癸醯酯、磷酸二月桂酯、磷酸二肉豆蔻酯、磷酸二鯨蠟酯、磷酸二硬脂醯酯、四乙二醇單新戊醚的二磷酸酯、三乙二醇單十三醚的二磷酸酯、四乙二醇單月桂醚的二磷酸酯、二乙二醇單硬脂醯醚的二磷酸酯等的磷酸酯及該等磷酸酯的胺鹽。作為胺,可列舉:氨、單甲胺、單乙胺、單丙胺、單丁胺、二甲胺、二乙胺、二丙胺、二丁胺、三甲胺、三乙胺、三丙胺、三丁胺、單乙醇胺、二乙醇胺、三乙醇胺等。
作為無機微粒子,可列舉:微粒子狀的二氧化鈦粉末、二氧化矽(silica)粉末、氧化鎂粉末、氧化鋁(alumina)粉末、氧化鋅粉末等的無機氧化物粉末、微粒子狀的氮化矽粉末、氮化鈦粉末等的無機氮化物粉末、碳化矽粉末等的無機碳化物粉末、及微粒子狀的碳酸鈣粉末、硫酸鈣粉末、硫酸鋇粉末等的無機鹽粉末。該等的無機微粒子亦可組合二種以上使用。為了使該等的無機微粒子均勻分散,可應用其本身已為習知的手段。
一實施態樣中,聚醯亞胺前驅物樹脂組成物,較佳係不包含烷氧基矽烷等的矽烷偶合劑。使用矽烷偶合劑的聚醯亞胺膜中,具有矽烷偶合劑滲漏的情況。因此產生聚醯亞胺膜的接著力降低、積層體膨脹及半導體元件的可靠度降低等問題。再者,若在聚醯胺酸溶液中添加矽烷偶合劑或使其反應,亦有聚醯胺酸溶液的黏度穩定性降低這樣的問題。為了避免這樣的問題,較佳係不使用矽烷偶合劑。由本發明的聚醯亞胺前驅物樹脂組成物所得之聚醯亞胺膜,對於基板的剝離強度改善,即使不使用矽烷偶合劑亦可提供一種良好的撓性裝置基板。
本發明的聚醯亞胺前驅物樹脂組成物亦可含有溶劑。作為溶劑,只要可溶解聚醯胺酸則未特別限定,可列舉與在調製聚醯胺酸時使用的溶劑相同者。溶劑亦可為2種以上的混合物。
作為調製聚醯胺酸時所使用的溶劑,並未特別限定,例如,可列舉:N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N,N-二乙基乙醯胺、N-甲基-2-吡咯啶酮、N-乙基-2-吡咯啶酮、N-乙烯基-2-吡咯啶酮等的醯胺溶劑;γ-丁內酯、γ-戊內酯、δ-戊內酯、γ-己內酯、ε-己內酯、α-甲基-γ-丁內酯等的環狀酯溶劑;碳酸伸乙酯、碳酸伸丙酯等的碳酸酯溶劑;三乙二醇等的二醇系溶劑;間甲酚、對甲酚、3-氯苯酚、4-氯苯酚等的苯酚系溶劑;苯乙酮、1,3-二甲基-2-咪唑啶酮、環丁碸、二甲基亞碸等。再者,亦可使用其他一般的有機溶劑,例如,甲醇、乙醇等的醇系溶劑,或是苯酚、鄰甲酚、乙酸丁酯、乙酸乙酯、乙酸異丁酯、丙二醇甲基乙酸酯、乙基賽珞蘇、丁基賽珞蘇、2-甲基賽珞蘇乙酸酯、乙基賽珞蘇乙酸酯、丁基賽珞蘇乙酸酯、四氫呋喃、二甲氧基乙烷、二乙氧基乙烷、二丁醚、二乙二醇二甲醚、甲基異丁基酮、二異丁基酮、環戊酮、環己酮、甲乙酮、丙酮、丁醇、乙醇、二甲苯、甲苯、氯苯、N-甲基己內醯胺、六甲基磷酸三醯胺、雙(2-甲氧基乙基)醚、1,2-雙(2-甲氧基乙氧基)乙烷、雙[2-(2-甲氧基乙氧基)乙基]醚、1,4-二烷、二甲基亞碸、二甲基碸、二苯醚、二苯碸、四甲基脲、苯甲醚、萜烯、礦精、石油腦系溶劑、生物分解性的乳酸甲酯、乳酸乙酯、乳酸丁酯等。所使用的有機溶劑可為1種,亦可為2種以上。
本發明的聚醯亞胺前驅物樹脂組成物中,由聚醯胺酸而來的固體成分濃度並未特別限定,相對於聚醯胺酸與溶劑的總量,較佳為5質量%~45質量%、更佳為7質量%~40質量%、再佳為9質量%~30質量%。若固體成分濃度低於5質量%,則可能導致生產性及使用時的操作性變差,若高於45質量%,則可能導致溶液的流動性消失。
又,本發明的聚醯亞胺前驅物樹脂組成物在30℃下的溶液黏度並未特別限定,較佳為1000Pa・s以下、更佳為0.1~500Pa・s、再佳為0.1~300Pa・s、特佳為0.1~200Pa・s,藉此處理性較佳。溶液黏度若超過1000Pa・s,則流動性消失,可能難以均勻塗布於金屬及玻璃等的載持基板,又若低於0.1Pa・s,則在塗布於金屬或玻璃等的載持基板可能產生滴液或眼孔(eye hole)等,又,可能難以得到高特性的聚醯亞胺膜。
本發明的聚醯亞胺前驅物樹脂組成物,因為以羧酸單酐封端,故保存穩定性優良。本發明的聚醯亞胺前驅物樹脂組成物的黏度變化率較佳為±10%以下、更佳為±5%以下、再佳為±3%以下。藉由使黏度變化率在該範圍內,即使在長期保管後黏度的變化仍小,而可抑制塗布於各種基材時所產生的不均勻。此處,「黏度變化率」係表示將聚醯亞胺前驅物樹脂組成物保管於25℃下30天時的黏度變化。具體而言,係從在25℃保管30天後的聚醯亞胺前驅物樹脂組成物的黏度(保管後黏度)與在25℃保管30天前的聚醯亞胺前驅物樹脂組成物的黏度(保管前黏度),以下述算出方法而求得。 (黏度變化率(%))={(保管後黏度)-(保管前黏度)}/(保管前黏度)×100
本發明的聚醯亞胺前驅物樹脂組成物的製造方法,一般包含:第一步驟,以滿足式(1)的莫耳比例使四羧酸成分與二胺成分在溶劑中反應,而得到末端具有胺基的聚醯胺酸;及第二步驟,以滿足式(2)的莫耳比例,使所得之聚醯胺酸與羧酸單酐反應,以將聚醯胺酸封端。
第一步驟中,為了抑制醯亞胺化反應,例如在100℃以下、較佳為80℃以下的較低溫進行。雖未限定,但通常反應溫度為25℃~100℃、較佳為40℃~80℃、更佳為50℃~80℃,反應時間通常為0.1~24小時左右、較佳為2~12小時左右。藉由使反應溫度及反應時間在該範圍內,可有效率地得到高分子量的聚醯胺酸的溶液組成物。另外,反應可在空氣環境下進行,但通常係在惰性氣體環境下,較佳為氮氣環境下進行。
第二步驟中雖亦可適當設定反應溫度,但從確實將聚醯胺酸封端的觀點來看,較佳為25℃~70℃、更佳為25℃~60℃、再佳為25℃~50℃。反應時間通常為0.1~24小時左右。
使用本發明的聚醯亞胺前驅物樹脂組成物,可製造撓性裝置基板。再者,使用所得之撓性裝置基板,可製造撓性裝置。
撓性裝置基板的製造中,首先,將本發明的聚醯亞胺前驅物樹脂組成物流延於載持基板上,以加熱處理進行醯亞胺化,藉此形成聚醯亞胺膜。可將所得之聚醯亞胺膜用於撓性裝置基板。載持基板雖未限制,但一般可使用鈉鈣玻璃、硼矽酸玻璃、無鹼玻璃等的玻璃基板或鐵、不銹鋼等的金屬基板。將聚醯胺酸溶液流延於載持基板上的流延方法並未特別限定,例如可列舉旋塗法、網版印刷法、棒塗法、電沉積法等的以往習知的方法。加熱處理條件未特別限定,係在50℃~150℃的溫度範圍內乾燥後,使最高加熱溫度為150℃~600℃、較佳為200℃~550℃、更佳為250℃~500℃而進行處理。
聚醯亞胺膜的厚度較佳為1μm以上。厚度小於1μm的情況,聚醯亞胺膜無法保持充分的機械強度,作為撓性裝置基板使用時,無法承受應力而可能被破壞。又,聚醯亞胺膜的厚度較佳為20μm以下。聚醯亞胺膜的厚度若超過20μm而變厚,則撓性裝置難以薄型化。作為撓性裝置,為了保持充分的耐性並且更加薄膜化,期望聚醯亞胺膜的厚度在2~10μm。
由本發明的聚醯亞胺前驅物樹脂組成物所得之聚醯亞胺膜,可穩固積層於玻璃基板。玻璃基板與聚醯亞胺膜的剝離強度,依據JIS K6854-1測量的情況,一般為50mN/mm以上、較佳為100mN/mm以上、更佳為200mN/mm以上、再佳為300mN/mm以上。
又,在由本發明的聚醯亞胺前驅物樹脂組成物所得之聚醯亞胺膜上,亦可積層樹脂膜及無機膜等的第二層而形成撓性裝置基板。特別是無機膜可作為水蒸氣屏障層使用,因而較佳。作為水蒸氣屏障層,可舉例如無機膜,其包含選自氮化矽(SiNx )、氧化矽(SiOx )、氧氮化矽(SiOx Ny )、氧化鋁(Al2 O3 )、氧化鈦(TiO2 )、氧化鋯(ZrO2 )等的金屬氧化物、金屬氮化物及金屬氧氮化物所構成之群組的無機物。一般而言,作為該等薄膜的成膜方法,真空蒸鍍法、濺鍍法、離子植入等的物理蒸鍍法、與電漿CVD法、觸媒化學氣相沉積法(Cat-CVD法)等的化學蒸鍍法(化學氣相沉積法)等已為人所知。
樹脂膜或無機膜之上,亦可積層由本發明的聚醯亞胺前驅物樹脂組成物所得之聚醯亞胺膜而形成撓性裝置基板。以與載持基板的情況相同的方法,使用本發明的聚醯亞胺前驅物樹脂組成物,可在樹脂膜或無機膜上積層聚醯亞胺膜。
由本發明之聚醯亞胺前驅物樹脂組成物所得之聚醯亞胺膜,即使在以無機膜作為基板的情況中,仍可穩固地積層。聚醯亞胺膜與無機膜(例如,氧化矽膜)的剝離強度,依據JIS K6854-1測量的情況,一般為50mN/mm以上、較佳為100mN/mm以上、更佳為200mN/mm以上、再佳為300mN/mm以上。
撓性裝置的製造中,在以上述方式所形成之撓性裝置基板(特別是聚醯亞胺膜)之上,形成顯示裝置或受光裝置所需之電路。此步驟依裝置的種類而有所不同。製造TFT液晶顯示裝置的情況中,在聚醯亞胺膜之上,形成例如非晶矽的TFT。TFT,例如,包含閘極金屬層、非晶矽膜等的半導體層、氮化矽閘極介電體層、ITO像素電極。更可以習知的方法於其上形成液晶顯示器所需之結構。本發明中所得之聚醯亞胺膜,其耐熱性、韌性等各種特性優良,形成電路等的方法並未特別限制。
如以上所述,可將表面形成電路等的撓性裝置基板(特別是聚醯亞胺膜)從載持基板剝離。剝離方法並未特別限制,例如可從載持基板側照射雷射等,藉此進行剝離。
作為本發明中的撓性裝置,可舉出液晶顯示器、有機EL顯示器、電子紙這樣的顯示裝置、與太陽能電池、CMOS等的受光裝置。本發明特佳係應用於薄型化且欲賦予撓性的裝置。 [實施例]
以下使用實施例進一步詳細說明本發明。另外,本發明不限於以下的實施例。
以下顯示下述例子中所使用的特性之測量方法。 <溶液黏度> 使用E型旋轉黏度計,測量在25℃下、10rpm的溶液黏度。
<黏度穩定性> 使在25℃下保管30天後的溶液黏度的黏度變化率在±5%以下的試料為○,於此之外為×。 <積層體的層間剝離強度> 藉由JIS K6854-1記載的90°剝離試驗,以寬度10mm、衝頭速度50mm/分鐘進行測量。
以下的例子中使用的化合物之縮寫如下。 s-BPDA:3,3’,4,4’-聯苯四羧酸二酐 PMDA:苯均四酸二酐 PPD:對苯二胺 ODA:4,4’-二胺二苯醚 PEPA:4-苯乙炔基苯二甲酸酐 NMP:N-甲基-2-吡咯啶酮 γ-APS:3-胺基丙基三乙氧基矽烷
以下的例子中所使用的化合物的量係以莫耳比例表示。使二胺的總量為100莫耳%,其他化合物的量則顯示為相對於二胺總量的莫耳比例。
[實施例1] 在經氮氣取代的反應容器中,進料PPD(100莫耳%)及NMP,於40℃下加熱攪拌15分鐘,使單體溶解。之後,加入s-BPDA(98莫耳%),再攪拌30分鐘,得到聚醯胺酸溶液。之後,於聚醯胺酸溶液中加入苯二甲酸酐(2莫耳%),得到黏度3.0Pa・s(25℃)的液狀聚醯亞胺前驅物樹脂組成物。將該聚醯亞胺前驅物樹脂組成物於25℃下靜置30天,實施黏度穩定性評估。評估結果為○。
將所調製之聚醯亞胺前驅物樹脂組成物旋塗於玻璃基板上,使塗膜分別在120℃、150℃、200℃、250℃、500℃下加熱處理10分鐘,形成厚度10μm的聚醯亞胺膜。所得之聚醯亞胺/玻璃積層體中未見膨脹等,又該積層體的聚醯亞胺膜與玻璃基板的90°剝離強度為538mN/mm。
[實施例2] 在實施例1所得之聚醯亞胺/玻璃積層體的聚醯亞胺膜上,以化學氣相沉積法(CVD)形成SiOx 膜。將實施例1所得之聚醯亞胺前驅物樹脂組成物旋塗於該SiOx 膜上。使塗膜分別在120℃、150℃、200℃、250℃、500℃下加熱處理10分鐘,進一步形成厚度10μm的聚醯亞胺膜,得到具有2層聚醯亞胺層的積層體。該積層體中未見膨脹等,又該積層體的SiOx 層與積層於其上的聚醯亞胺層的90°剝離強度為499mN/mm。
[實施例3] 在經氮氣取代的反應容器中,進料PPD(100莫耳%)及NMP,於40℃下加熱攪拌15分鐘,使單體溶解。之後,加入s-BPDA(98莫耳%),再攪拌30分鐘,得到聚醯胺酸溶液。之後,於聚醯胺酸溶液中加入苯二甲酸酐(4莫耳%),得到黏度2.9Pa・s(25℃)的液狀聚醯亞胺前驅物樹脂組成物。將該聚醯亞胺前驅物樹脂組成物於25℃下靜置30天,實施黏度穩定性評估。評估結果為○。
將所調製之聚醯亞胺前驅物樹脂組成物旋塗於玻璃基板上,使塗膜分別在120℃、150℃、200℃、250℃、500℃下加熱處理10分鐘,於玻璃基板上形成厚度10μm的聚醯亞胺膜。所得之聚醯亞胺/玻璃積層體中未見膨脹等,又該積層體的聚醯亞胺膜與玻璃基板的90°剝離強度為512mN/mm。
[實施例4] 在經氮氣取代的反應容器中,進料PPD(100莫耳%)及NMP,於40℃下加熱攪拌15分鐘,使單體溶解。之後,加入s-BPDA(98莫耳%),再攪拌30分鐘,得到聚醯胺酸溶液。之後,於聚醯胺酸溶液中加入馬來酸酐(4莫耳%),得到黏度3.1Pa・s(25℃)的液狀聚醯亞胺前驅物樹脂組成物。將該聚醯亞胺前驅物樹脂組成物於25℃下靜置30天,實施黏度穩定性評估。評估結果為○。
將所調製之聚醯亞胺前驅物樹脂組成物旋塗於玻璃基板上,使塗膜分別在120℃、150℃、200℃、250℃、500℃下加熱處理10分鐘,於玻璃基板上形成厚度10μm的聚醯亞胺膜。所得之聚醯亞胺/玻璃積層體中未見膨脹等,又該積層體的聚醯亞胺膜與玻璃基板的90°剝離強度為282mN/mm。
[比較例1] 在經氮氣取代的反應容器中,進料PPD(100莫耳%)及NMP,於40℃下加熱攪拌15分鐘,使單體溶解。之後,加入s-BPDA(100莫耳%),再攪拌30分鐘,得到黏度1.1Pa・s(25℃)的液狀聚醯亞胺前驅物樹脂組成物。將該聚醯亞胺前驅物樹脂組成物於25℃下靜置30天,實施黏度穩定性評估。評估結果為○。
以旋塗法將所得之液狀聚醯亞胺前驅物樹脂組成物塗布於厚度625μm的6英吋矽基板上後,以130℃的加熱板烘烤2分鐘,而形成厚度5μm的膜。接著,使用硬化爐於200℃下進行30分鐘、進一步於350℃下進行60分鐘的加熱硬化,藉此進行醯亞胺化,得到聚醯亞胺膜。醯亞胺化後的膜厚為3μm。該積層體中雖未見膨脹等,但聚醯亞胺膜與矽基板的90°剝離強度為10mN/mm,幾乎未接著。
[比較例2] 在經氮氣取代的反應容器中,進料PPD(100莫耳%)及NMP,於40℃下加熱攪拌15分鐘,使單體溶解。之後,加入s-BPDA(99.5莫耳%)及作為矽烷偶合劑的γ-APS(0.5莫耳%),再攪拌30分鐘,得到黏度19.0Pa・s(25℃)的液狀聚醯亞胺前驅物樹脂組成物。將該聚醯亞胺前驅物樹脂組成物於25℃下靜置30天,實施黏度穩定性評估。評估結果為×。
將所調製之聚醯亞胺前驅物樹脂組成物旋塗於玻璃基板上,使塗膜分別在120℃、150℃、200℃、250℃、500℃下加熱處理10分鐘,於玻璃基板上形成厚度10μm的聚醯亞胺膜。以化學氣相沉積法(CVD)在所得之聚醯亞胺/玻璃積層體的聚醯亞胺膜上形成SiOx 膜。再將所調製之聚醯亞胺前驅物樹脂組成物旋塗於SiOx 膜上。使塗膜分別在120℃、150℃、200℃、250℃、500℃下加熱處理10分鐘,進一步形成厚度10μm的聚醯亞胺膜,得到具有2層聚醯亞胺層的積層體。該積層體中雖未見膨脹等,但該積層體的SiOx 層與積層於其上的聚醯亞胺層的90°剝離強度為4mN/mm,而幾乎未接著。
[比較例3] 在經氮氣取代的反應容器中,進料PPD(100莫耳%)及NMP,於40℃下加熱攪拌15分鐘,使單體溶解。之後,加入s-BPDA(98莫耳%),再攪拌30分鐘,得到聚醯胺酸溶液。之後,於聚醯胺酸溶液中加入苯二甲酸酐(8莫耳%),得到黏度3.2Pa・s(25℃)的液狀聚醯亞胺前驅物樹脂組成物。將該聚醯亞胺前驅物樹脂組成物於25℃下靜置30天,實施黏度穩定性評估。評估結果為○。
將所調製之聚醯亞胺前驅物樹脂組成物旋塗於玻璃基板上,使塗膜分別在120℃、150℃、200℃、250℃、500℃下加熱處理10分鐘,於玻璃基板上形成厚度10μm的聚醯亞胺膜。所得之聚醯亞胺/玻璃積層體中雖未見膨脹等,但聚醯亞胺膜極脆,而無法進行90°剝離強度的測量。
[比較例4] 在經氮氣取代的反應容器中,進料PPD(100莫耳%)及NMP,於40℃下加熱攪拌15分鐘,使單體溶解。之後,加入s-BPDA(97莫耳%),再攪拌30分鐘,得到聚醯胺酸溶液。之後,於聚醯胺酸溶液中加入苯二甲酸酐(2莫耳%),得到黏度2.8Pa・s(25℃)的液狀聚醯亞胺前驅物樹脂組成物。將該聚醯亞胺前驅物樹脂組成物於25℃下靜置30天,實施黏度穩定性評估。評估結果為○。
將所調製之聚醯亞胺前驅物樹脂組成物旋塗於玻璃基板上,使塗膜分別在120℃、150℃、200℃、250℃、500℃下加熱處理10分鐘,於玻璃基板上形成厚度10μm的聚醯亞胺膜。所得之聚醯亞胺/玻璃積層體中雖未見膨脹等,但聚醯亞胺膜極脆,而無法進行90°剝離強度的測量。 [比較例5]
在經氮氣取代的反應容器中,進料PPD(100莫耳%)及NMP,於40℃下加熱攪拌15分鐘,使單體溶解。之後,加入s-BPDA(96.1莫耳%),再攪拌30分鐘,得到聚醯胺酸溶液。之後,於聚醯胺酸溶液中加入苯二甲酸酐(7.8莫耳%),得到黏度3.0Pa・s(25℃)的液狀聚醯亞胺前驅物樹脂組成物。將該聚醯亞胺前驅物樹脂組成物於25℃下靜置30天,實施黏度穩定性評估。評估結果為○。
將所調製之聚醯亞胺前驅物樹脂組成物旋塗於玻璃基板上,使塗膜分別在120℃、150℃、200℃、250℃、500℃下加熱處理10分鐘,於玻璃基板上形成厚度10μm的聚醯亞胺膜。所得之聚醯亞胺/玻璃積層體中雖未見膨脹等,但聚醯亞胺膜極脆,而無法進行90°剝離強度的測量。 [比較例6]
在經氮氣取代的反應容器中,進料PPD(100莫耳%)及NMP,於40℃下加熱攪拌15分鐘,使單體溶解。之後加入s-BPDA(92.4莫耳%),再攪拌30分鐘,得到聚醯胺酸溶液。之後,於聚醯胺酸溶液中加入苯二甲酸酐(13.9莫耳%),得到黏度3.1Pa・s(25℃)的液狀聚醯亞胺前驅物樹脂組成物。將該聚醯亞胺前驅物樹脂組成物於25℃下靜置30天,實施黏度穩定性評估。評估結果為○。
將所調製之聚醯亞胺前驅物樹脂組成物旋塗於玻璃基板上,使塗膜分別在120℃、150℃、200℃、250℃、500℃下加熱處理10分鐘,於玻璃基板上形成厚度10μm的聚醯亞胺膜。所得之聚醯亞胺/玻璃積層體中雖未見膨脹等,但聚醯亞胺膜極脆,而無法進行90°剝離強度的測量。 [實施例5]
在經氮氣取代的反應容器中,進料PPD(100莫耳%)及NMP,於40℃下加熱攪拌15分鐘,使單體溶解。之後,加入s-BPDA(97莫耳%),再攪拌30分鐘,得到聚醯胺酸溶液。之後,於聚醯胺酸溶液中加入苯二甲酸酐(3莫耳%),得到黏度1.4Pa・s(25℃)的液狀聚醯亞胺前驅物樹脂組成物。將該聚醯亞胺前驅物樹脂組成物於25℃下靜置30天,實施黏度穩定性評估。評估結果為○。
將所調製之聚醯亞胺前驅物樹脂組成物旋塗於玻璃基板上,使塗膜分別在120℃、150℃、200℃、250℃、500℃下加熱處理10分鐘,於玻璃基板上形成厚度10μm的聚醯亞胺膜。所得之聚醯亞胺/玻璃積層體中未見膨脹等,又該積層體的聚醯亞胺膜與玻璃基板的90°剝離強度為417mN/mm。 [實施例6]
在經氮氣取代的反應容器中,進料PPD(100莫耳%)及NMP,於40℃下加熱攪拌15分鐘,使單體溶解。之後,加入s-BPDA(98莫耳%),再攪拌30分鐘,得到聚醯胺酸溶液。之後,於聚醯胺酸溶液中加入PEPA(4莫耳%),得到黏度4.4Pa・s(25℃)的液狀聚醯亞胺前驅物樹脂組成物。將該聚醯亞胺前驅物樹脂組成物於25℃下靜置30天,實施黏度穩定性評估。評估結果為○。
將所調製之聚醯亞胺前驅物樹脂組成物旋塗於玻璃基板上,使塗膜分別在120℃、150℃、200℃、250℃、500℃下加熱處理10分鐘,於玻璃基板上形成厚度10μm的聚醯亞胺膜。所得之聚醯亞胺/玻璃積層體中未見膨脹等,又該積層體的聚醯亞胺膜與玻璃基板的90°剝離強度為318mN/mm。 [實施例7]
在經氮氣取代的反應容器中,進料PPD(100莫耳%)及NMP,於40℃下加熱攪拌15分鐘,使單體溶解。之後,加入s-BPDA(99.5莫耳%),再攪拌30分鐘,得到聚醯胺酸溶液。之後,於聚醯胺酸溶液中加入苯二甲酸酐(1莫耳%),得到黏度4.4Pa・s(25℃)的液狀聚醯亞胺前驅物樹脂組成物。將該聚醯亞胺前驅物樹脂組成物於25℃下靜置30天,實施黏度穩定性評估。評估結果為○。
將所調製之聚醯亞胺前驅物樹脂組成物旋塗於玻璃基板上,使塗膜分別在120℃、150℃、200℃、250℃、500℃下加熱處理10分鐘,於玻璃基板上形成厚度10μm的聚醯亞胺膜。所得之聚醯亞胺/玻璃積層體中未見膨脹等,又該積層體的聚醯亞胺膜與玻璃基板的90°剝離強度為417mN/mm。 [實施例8]
在經氮氣取代的反應容器中,進料ODA(100莫耳%)及NMP,於40℃下加熱攪拌15分鐘,使單體溶解。之後,加入s-BPDA(98莫耳%),再攪拌30分鐘,得到聚醯胺酸溶液。之後,於聚醯胺酸溶液中加入苯二甲酸酐(4莫耳%),得到黏度3.3Pa・s(25℃)的液狀聚醯亞胺前驅物樹脂組成物。將該聚醯亞胺前驅物樹脂組成物於25℃下靜置30天,實施黏度穩定性評估。評估結果為○。
將所調製之聚醯亞胺前驅物樹脂組成物旋塗於玻璃基板上,使塗膜分別在120℃、150℃、200℃、250℃、400℃下加熱處理10分鐘,於玻璃基板上形成厚度10μm的聚醯亞胺膜。所得之聚醯亞胺/玻璃積層體中未見膨脹等,又該積層體的聚醯亞胺膜與玻璃基板的90°剝離強度為608mN/mm。 [實施例9]
在經氮氣取代的反應容器中,進料PPD(50莫耳%),ODA(50莫耳%)及NMP,於40℃下加熱攪拌15分鐘,使單體溶解。之後,加入s-BPDA(39.2莫耳%)及PMDA(58.8莫耳%),再攪拌30分鐘,得到聚醯胺酸溶液。之後,於聚醯胺酸溶液中加入苯二甲酸酐(4莫耳%),得到黏度2.0Pa·s(25℃)的液狀聚醯亞胺前驅物樹脂組成物。將該聚醯亞胺前驅物樹脂組成物於25℃下靜置30天,實施黏度穩定性評估。評估結果為○。
將所調製之聚醯亞胺前驅物樹脂組成物旋塗於玻璃基板上,使塗膜分別在120℃、150℃、200℃、250℃、400℃下加熱處理10分鐘,於玻璃基板上形成厚度10μm的聚醯亞胺膜。所得之聚醯亞胺/玻璃積層體中未見膨脹等,又該積層體的聚醯亞胺膜與玻璃基板的90°剝離強度為288mN/mm。 [比較例7]
在經氮氣取代的反應容器中,進料PPD(100莫耳%)及NMP,於40℃下加熱攪拌15分鐘,使單體溶解。之後,加入s-BPDA(98莫耳%),再攪拌30分鐘,得到聚醯胺酸溶液。之後,於聚醯胺酸溶液中加入苯二甲酸酐(4.5莫耳%),得到黏度4.4Pa·s(25℃)的液狀聚醯亞胺前驅物樹脂組成物。將該聚醯亞胺前驅物樹脂組成物於25℃下靜置30天,實施黏度穩定性評估。評估結果為○。
將所調製之聚醯亞胺前驅物樹脂組成物旋塗於玻璃基板上,使塗膜分別在120℃、150℃、200℃、250℃、500℃下加熱處理10分鐘,於玻璃基板上形成厚度10μm的聚醯亞胺膜。所得之聚醯亞胺/玻璃積層體中雖未見膨脹等,但聚醯亞胺膜極脆,而無法進行90°剝離強度的測量。
【表1】 [產業上的利用可能性]
本發明的聚醯亞胺前驅物樹脂組成物,即使不含矽烷偶合劑,亦可提供對於基板具有優良之剝離強度的聚醯亞胺膜,而可較佳地作為例如液晶顯示器、有機EL顯示器、電子紙等的顯示裝置、薄膜太陽能電池的受光元件等受光裝置等的撓性裝置之基板。

Claims (9)

  1. 一種用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物,其包含聚醯胺酸,該聚醯胺酸具有由包含3,3’,4,4’-聯苯四羧酸二酐及苯均四酸二酐之至少一者的四羧酸成分、包含對苯二胺及4,4’-二胺二苯醚之至少一者的二胺成分及羧酸單酐所得之結構,而該四羧酸成分、該二胺成分及該羧酸單酐滿足下式(1)及下式(2); 式(1)  0.97≦X/Y<1.00 式(2)  0.5≦(Z/2)/(Y-X)≦1.05 (式中,X表示該四羧酸成分的莫耳數,Y表示該二胺成分的莫耳數,Z表示該羧酸單酐的莫耳數)。
  2. 如申請專利範圍第1項之用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物,其中3,3’,4,4’-聯苯四羧酸二酐的含量為該四羧酸成分的40莫耳%以上。
  3. 如申請專利範圍第1或2項之用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物,其中對苯二胺的含量為該二胺成分的40莫耳%以上。
  4. 如申請專利範圍第1至3項中任1項之用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物,其中該羧酸單酐為苯二甲酸酐或馬來酸酐。
  5. 一種積層體,包含:由如申請專利範圍第1至4項中任1項之用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物所得之聚醯亞胺膜與玻璃基板。
  6. 一種撓性裝置基板,包含:由如申請專利範圍第1至4項中任1項之用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物所得之聚醯亞胺膜。
  7. 一種撓性裝置基板,包含:由如申請專利範圍第1至4項中任1項之用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物所得之聚醯亞胺膜及選自氮化矽、氧化矽、氧氮化矽、氧化鋁、氧化鈦及氧化鋯所構成之群組的無機物。
  8. 一種撓性裝置,係在如申請專利範圍第6或7項之撓性裝置基板上搭載TFT。
  9. 一種積層體的製造方法,其包含將包含聚醯胺酸的用於形成撓性裝置基板的聚醯亞胺前驅物樹脂組成物流延於基板上的步驟;及藉由加熱處理使該聚醯胺酸進行醯亞胺化而形成聚醯亞胺膜之步驟的積層體的製造方法,其特徵為: 該聚醯胺酸,係具有由包含3,3’,4,4’-聯苯四羧酸二酐及苯均四酸二酐之至少一者的四羧酸成分、包含對苯二胺及4,4’-二胺二苯醚之至少一者的二胺成分及羧酸單酐所得之結構的聚醯胺酸,而該四羧酸成分、該二胺成分及該羧酸單酐滿足下式(1)及下式(2); 式(1)  0.97≦X/Y<1.00 式(2)  0.5≦(Z/2)/(Y-X)≦1.05 (式中,X表示該四羧酸成分的莫耳數,Y表示該二胺成分的莫耳數,Z表示該羧酸單酐的莫耳數)。
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