WO2016043180A1 - 積層体およびフレキシブルデバイスの製造方法 - Google Patents
積層体およびフレキシブルデバイスの製造方法 Download PDFInfo
- Publication number
- WO2016043180A1 WO2016043180A1 PCT/JP2015/076118 JP2015076118W WO2016043180A1 WO 2016043180 A1 WO2016043180 A1 WO 2016043180A1 JP 2015076118 W JP2015076118 W JP 2015076118W WO 2016043180 A1 WO2016043180 A1 WO 2016043180A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- resistant resin
- flexible substrate
- resin film
- sacrificial layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims abstract description 258
- 229920006015 heat resistant resin Polymers 0.000 claims abstract description 89
- 239000000853 adhesive Substances 0.000 claims abstract description 50
- 230000001070 adhesive effect Effects 0.000 claims abstract description 50
- 238000012805 post-processing Methods 0.000 claims abstract description 10
- 238000011282 treatment Methods 0.000 claims description 81
- 229920001721 polyimide Polymers 0.000 claims description 76
- 238000010521 absorption reaction Methods 0.000 claims description 53
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 33
- 229910000077 silane Inorganic materials 0.000 claims description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 13
- 238000007788 roughening Methods 0.000 claims description 10
- 239000009719 polyimide resin Substances 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 7
- 239000004642 Polyimide Substances 0.000 description 52
- 239000011521 glass Substances 0.000 description 31
- 239000000243 solution Substances 0.000 description 28
- 239000002243 precursor Substances 0.000 description 25
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 19
- 239000002904 solvent Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 8
- 230000018044 dehydration Effects 0.000 description 8
- 238000006297 dehydration reaction Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 229920001187 thermosetting polymer Polymers 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 6
- 230000006837 decompression Effects 0.000 description 6
- -1 for example Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- 238000013329 compounding Methods 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 150000003949 imides Chemical class 0.000 description 5
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 150000001408 amides Chemical class 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000003795 desorption Methods 0.000 description 4
- 229920005575 poly(amic acid) Polymers 0.000 description 4
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 4
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 3
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000002966 varnish Substances 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- LFBALUPVVFCEPA-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1 LFBALUPVVFCEPA-UHFFFAOYSA-N 0.000 description 2
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 2
- CNODSORTHKVDEM-UHFFFAOYSA-N 4-trimethoxysilylaniline Chemical compound CO[Si](OC)(OC)C1=CC=C(N)C=C1 CNODSORTHKVDEM-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- 239000004962 Polyamide-imide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- GDFUXPFQUMDNJA-UHFFFAOYSA-N [SiH4].C=CC1=CC=CC=C1 Chemical compound [SiH4].C=CC1=CC=CC=C1 GDFUXPFQUMDNJA-UHFFFAOYSA-N 0.000 description 2
- NOKSMMGULAYSTD-UHFFFAOYSA-N [SiH4].N=C=O Chemical compound [SiH4].N=C=O NOKSMMGULAYSTD-UHFFFAOYSA-N 0.000 description 2
- QRQNQBXFCZPLJV-UHFFFAOYSA-N [dimethoxy(2-phenylethyl)silyl]oxymethanamine Chemical compound NCO[Si](OC)(OC)CCC1=CC=CC=C1 QRQNQBXFCZPLJV-UHFFFAOYSA-N 0.000 description 2
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000005456 alcohol based solvent Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- VKIRRGRTJUUZHS-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1 VKIRRGRTJUUZHS-UHFFFAOYSA-N 0.000 description 2
- 238000007791 dehumidification Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 125000006159 dianhydride group Chemical group 0.000 description 2
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 2
- 238000000113 differential scanning calorimetry Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- KZTYYGOKRVBIMI-UHFFFAOYSA-N diphenyl sulfone Chemical compound C=1C=CC=CC=1S(=O)(=O)C1=CC=CC=C1 KZTYYGOKRVBIMI-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004210 ether based solvent Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- INJVFBCDVXYHGQ-UHFFFAOYSA-N n'-(3-triethoxysilylpropyl)ethane-1,2-diamine Chemical compound CCO[Si](OCC)(OCC)CCCNCCN INJVFBCDVXYHGQ-UHFFFAOYSA-N 0.000 description 2
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 2
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- 229920002312 polyamide-imide Polymers 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 2
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 1
- LTQBNYCMVZQRSD-UHFFFAOYSA-N (4-ethenylphenyl)-trimethoxysilane Chemical compound CO[Si](OC)(OC)C1=CC=C(C=C)C=C1 LTQBNYCMVZQRSD-UHFFFAOYSA-N 0.000 description 1
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- ORTVZLZNOYNASJ-UPHRSURJSA-N (z)-but-2-ene-1,4-diol Chemical compound OC\C=C/CO ORTVZLZNOYNASJ-UPHRSURJSA-N 0.000 description 1
- OFXSBTTVJAFNSJ-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5,6,6,7,7-tetradecafluoro-n,n'-diphenylheptane-1,7-diamine Chemical compound C=1C=CC=CC=1NC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)NC1=CC=CC=C1 OFXSBTTVJAFNSJ-UHFFFAOYSA-N 0.000 description 1
- VITYLMJSEZETGU-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5-decafluoro-n,n'-diphenylpentane-1,5-diamine Chemical compound C=1C=CC=CC=1NC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)NC1=CC=CC=C1 VITYLMJSEZETGU-UHFFFAOYSA-N 0.000 description 1
- JLTHXLWCVUJTFW-UHFFFAOYSA-N 1,1,2,2,3,3,4,4-octafluoro-n,n'-diphenylbutane-1,4-diamine Chemical compound C=1C=CC=CC=1NC(F)(F)C(F)(F)C(F)(F)C(F)(F)NC1=CC=CC=C1 JLTHXLWCVUJTFW-UHFFFAOYSA-N 0.000 description 1
- UMMYYBOQOTWQTD-UHFFFAOYSA-N 1,1,2,2,3,3-hexafluoro-n,n'-diphenylpropane-1,3-diamine Chemical compound C=1C=CC=CC=1NC(F)(F)C(F)(F)C(F)(F)NC1=CC=CC=C1 UMMYYBOQOTWQTD-UHFFFAOYSA-N 0.000 description 1
- ZWVMLYRJXORSEP-UHFFFAOYSA-N 1,2,6-Hexanetriol Chemical compound OCCCCC(O)CO ZWVMLYRJXORSEP-UHFFFAOYSA-N 0.000 description 1
- LRMDXTVKVHKWEK-UHFFFAOYSA-N 1,2-diaminoanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=C(N)C(N)=CC=C3C(=O)C2=C1 LRMDXTVKVHKWEK-UHFFFAOYSA-N 0.000 description 1
- QWOVEJBDMKHZQK-UHFFFAOYSA-N 1,3,5-tris(3-trimethoxysilylpropyl)-1,3,5-triazinane-2,4,6-trione Chemical compound CO[Si](OC)(OC)CCCN1C(=O)N(CCC[Si](OC)(OC)OC)C(=O)N(CCC[Si](OC)(OC)OC)C1=O QWOVEJBDMKHZQK-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- PWGJDPKCLMLPJW-UHFFFAOYSA-N 1,8-diaminooctane Chemical compound NCCCCCCCCN PWGJDPKCLMLPJW-UHFFFAOYSA-N 0.000 description 1
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 description 1
- WOOLAEUATDXVIQ-UHFFFAOYSA-N 1-[2-(methoxymethoxy)ethoxy]ethanol Chemical compound COCOCCOC(C)O WOOLAEUATDXVIQ-UHFFFAOYSA-N 0.000 description 1
- ASCXBEUQTVLNMG-UHFFFAOYSA-N 1-[dimethoxy(2-phenylethyl)silyl]oxy-n'-phenylethane-1,2-diamine Chemical compound C=1C=CC=CC=1NCC(N)O[Si](OC)(OC)CCC1=CC=CC=C1 ASCXBEUQTVLNMG-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- YDYSEBSNAKCEQU-UHFFFAOYSA-N 2,3-diamino-n-phenylbenzamide Chemical compound NC1=CC=CC(C(=O)NC=2C=CC=CC=2)=C1N YDYSEBSNAKCEQU-UHFFFAOYSA-N 0.000 description 1
- KKTUQAYCCLMNOA-UHFFFAOYSA-N 2,3-diaminobenzoic acid Chemical compound NC1=CC=CC(C(O)=O)=C1N KKTUQAYCCLMNOA-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- STMZGJLCKJFMLQ-NXEZZACHSA-N 2-[(1s,3s)-3-(2-aminoethyl)cyclohexyl]ethanamine Chemical compound NCC[C@H]1CCC[C@H](CCN)C1 STMZGJLCKJFMLQ-NXEZZACHSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- STMZGJLCKJFMLQ-UHFFFAOYSA-N 2-[3-(2-aminoethyl)cyclohexyl]ethanamine Chemical compound NCCC1CCCC(CCN)C1 STMZGJLCKJFMLQ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- CJKOPYCBHDMAFY-UHFFFAOYSA-N 2-chloroethoxy-dimethoxy-(2-phenylethyl)silane Chemical compound ClCCO[Si](OC)(OC)CCC1=CC=CC=C1 CJKOPYCBHDMAFY-UHFFFAOYSA-N 0.000 description 1
- HFACYWDPMNWMIW-UHFFFAOYSA-N 2-cyclohexylethanamine Chemical compound NCCC1CCCCC1 HFACYWDPMNWMIW-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 229940093475 2-ethoxyethanol Drugs 0.000 description 1
- HCGFUIQPSOCUHI-UHFFFAOYSA-N 2-propan-2-yloxyethanol Chemical compound CC(C)OCCO HCGFUIQPSOCUHI-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- PQFRTJPVZSPBFI-UHFFFAOYSA-N 3-(trifluoromethyl)benzene-1,2-diamine Chemical compound NC1=CC=CC(C(F)(F)F)=C1N PQFRTJPVZSPBFI-UHFFFAOYSA-N 0.000 description 1
- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 description 1
- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 description 1
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 1
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 description 1
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- ZWQOXRDNGHWDBS-UHFFFAOYSA-N 4-(2-phenylphenoxy)aniline Chemical group C1=CC(N)=CC=C1OC1=CC=CC=C1C1=CC=CC=C1 ZWQOXRDNGHWDBS-UHFFFAOYSA-N 0.000 description 1
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 1
- AVCOFPOLGHKJQB-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)sulfonylphthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1S(=O)(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 AVCOFPOLGHKJQB-UHFFFAOYSA-N 0.000 description 1
- APXJLYIVOFARRM-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 APXJLYIVOFARRM-UHFFFAOYSA-N 0.000 description 1
- GEYAGBVEAJGCFB-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=C(C(O)=O)C(C(O)=O)=CC=1C(C)(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 GEYAGBVEAJGCFB-UHFFFAOYSA-N 0.000 description 1
- BEKFRNOZJSYWKZ-UHFFFAOYSA-N 4-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C=C1 BEKFRNOZJSYWKZ-UHFFFAOYSA-N 0.000 description 1
- ZYEDGEXYGKWJPB-UHFFFAOYSA-N 4-[2-(4-aminophenyl)propan-2-yl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)(C)C1=CC=C(N)C=C1 ZYEDGEXYGKWJPB-UHFFFAOYSA-N 0.000 description 1
- IOUVQFAYPGDXFG-UHFFFAOYSA-N 4-[4-[2-[4-(3,4-dicarboxyphenoxy)phenyl]-1,1,1,3,3,3-hexafluoropropan-2-yl]phenoxy]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1OC1=CC=C(C(C=2C=CC(OC=3C=C(C(C(O)=O)=CC=3)C(O)=O)=CC=2)(C(F)(F)F)C(F)(F)F)C=C1 IOUVQFAYPGDXFG-UHFFFAOYSA-N 0.000 description 1
- KJLPSBMDOIVXSN-UHFFFAOYSA-N 4-[4-[2-[4-(3,4-dicarboxyphenoxy)phenyl]propan-2-yl]phenoxy]phthalic acid Chemical compound C=1C=C(OC=2C=C(C(C(O)=O)=CC=2)C(O)=O)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(C(O)=O)C(C(O)=O)=C1 KJLPSBMDOIVXSN-UHFFFAOYSA-N 0.000 description 1
- PRKPGWQEKNEVEU-UHFFFAOYSA-N 4-methyl-n-(3-triethoxysilylpropyl)pentan-2-imine Chemical compound CCO[Si](OCC)(OCC)CCCN=C(C)CC(C)C PRKPGWQEKNEVEU-UHFFFAOYSA-N 0.000 description 1
- GSEAXRDVQPDNFR-UHFFFAOYSA-N C1(CC2C(CC1)O2)CC[Si](OC)(OC)OC.NC(O[Si](OC)(OC)CCC2=CC=CC=C2)(C)NC2=CC=CC=C2 Chemical compound C1(CC2C(CC1)O2)CC[Si](OC)(OC)OC.NC(O[Si](OC)(OC)CCC2=CC=CC=C2)(C)NC2=CC=CC=C2 GSEAXRDVQPDNFR-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZPAKUZKMGJJMAA-UHFFFAOYSA-N Cyclohexane-1,2,4,5-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)CC1C(O)=O ZPAKUZKMGJJMAA-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N Tetraethylene glycol, Natural products OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 description 1
- BFXRJTDKPLPXSK-UHFFFAOYSA-N [SiH4].CO[Si](CCCS)(OC)OC Chemical compound [SiH4].CO[Si](CCCS)(OC)OC BFXRJTDKPLPXSK-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 1
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- FPOSCXQHGOVVPD-UHFFFAOYSA-N chloromethyl(trimethoxy)silane Chemical compound CO[Si](CCl)(OC)OC FPOSCXQHGOVVPD-UHFFFAOYSA-N 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- CURBACXRQKTCKZ-UHFFFAOYSA-N cyclobutane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1C(C(O)=O)C(C(O)=O)C1C(O)=O CURBACXRQKTCKZ-UHFFFAOYSA-N 0.000 description 1
- WOSVXXBNNCUXMT-UHFFFAOYSA-N cyclopentane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1CC(C(O)=O)C(C(O)=O)C1C(O)=O WOSVXXBNNCUXMT-UHFFFAOYSA-N 0.000 description 1
- YQLZOAVZWJBZSY-UHFFFAOYSA-N decane-1,10-diamine Chemical compound NCCCCCCCCCCN YQLZOAVZWJBZSY-UHFFFAOYSA-N 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Natural products C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- QFTYSVGGYOXFRQ-UHFFFAOYSA-N dodecane-1,12-diamine Chemical compound NCCCCCCCCCCCCN QFTYSVGGYOXFRQ-UHFFFAOYSA-N 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- NOUUUQMKVOUUNR-UHFFFAOYSA-N n,n'-diphenylethane-1,2-diamine Chemical compound C=1C=CC=CC=1NCCNC1=CC=CC=C1 NOUUUQMKVOUUNR-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- RMTGISUVUCWJIT-UHFFFAOYSA-N n-[3-[3-aminopropoxy(dimethoxy)silyl]propyl]-1-phenylprop-2-en-1-amine;hydrochloride Chemical compound Cl.NCCCO[Si](OC)(OC)CCCNC(C=C)C1=CC=CC=C1 RMTGISUVUCWJIT-UHFFFAOYSA-N 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- DSCIZKMHZPGBNI-UHFFFAOYSA-N naphthalene-1,3,5,8-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C2=CC(C(=O)O)=CC(C(O)=O)=C21 DSCIZKMHZPGBNI-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- DYFXGORUJGZJCA-UHFFFAOYSA-N phenylmethanediamine Chemical compound NC(N)C1=CC=CC=C1 DYFXGORUJGZJCA-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003055 poly(ester-imide) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 235000013772 propylene glycol Nutrition 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 125000003396 thiol group Chemical class [H]S* 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- FRGPKMWIYVTFIQ-UHFFFAOYSA-N triethoxy(3-isocyanatopropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN=C=O FRGPKMWIYVTFIQ-UHFFFAOYSA-N 0.000 description 1
- VTHOKNTVYKTUPI-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSSSCCC[Si](OCC)(OCC)OCC VTHOKNTVYKTUPI-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/34—Layered products comprising a layer of synthetic resin comprising polyamides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/045—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/30—Properties of the layers or laminate having particular thermal properties
- B32B2307/306—Resistant to heat
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
Definitions
- the present invention relates to a laminate in which a heat-resistant resin film such as a polyimide resin is formed on an inorganic substrate, and a method for manufacturing a flexible device.
- the laminate of the present invention is useful, for example, when manufacturing a flexible device and a flexible wiring board in which an electronic element is formed on the surface of a flexible substrate.
- FPD flat panel displays
- LCD liquid crystal displays
- PDP plasma display panels
- OLED organic EL displays
- electronic paper substrates mainly made of inorganic materials such as glass substrates. What formed the electronic element on the (inorganic board
- the inorganic substrate is rigid and lacks flexibility, there is a problem that it is difficult to be flexible.
- the inorganic substrate In an inorganic substrate on which a flexible substrate layer made of such a heat-resistant resin film is laminated, the inorganic substrate is used as a carrier substrate. Therefore, after forming an electronic element on the surface of the heat-resistant resin film, the heat-resistant resin film is finally attached. It is necessary to separate and separate from the inorganic substrate. Accordingly, good peelability is required after the electronic element is formed. However, from the viewpoint of preventing the heat resistant resin film from being peeled off from the inorganic substrate in the step of forming the electronic element, the heat resistant resin film must be firmly adhered to the inorganic substrate.
- Patent Documents 1 and 2 As a method for improving the adhesion, for example, a method of treating the surface of an inorganic substrate such as a glass substrate with a silane coupler has been proposed (Patent Documents 1 and 2). In addition, a method of roughening the surface of an inorganic substrate such as a glass substrate has been proposed (Patent Documents 3 and 4). As a method of industrially peeling the heat-resistant resin film that is firmly adhered to the inorganic substrate from the inorganic substrate in this way, for example, the laser beam is irradiated on the interface of the heat-resistant resin film such as a polyimide resin in contact with the glass substrate.
- the laser beam is irradiated on the interface of the heat-resistant resin film such as a polyimide resin in contact with the glass substrate.
- Patent Document 5 Method of heating the interface of the polyimide film in contact with the glass substrate with Joule heat (Patent Document 6), method of induction heating (Patent Document 7), method of irradiating flash light from a xenon lamp (Patent Document 8) and the like have proposed a method for performing peeling.
- these methods have a problem that the process is complicated and takes a long time, and the equipment is expensive, which is not only expensive but also difficult to reuse the inorganic substrate.
- Patent Document 9 proposes a method of improving the peelability of the polyimide laminate by leaving it in pressurized steam for a long time.
- Patent Document 10 proposes a method of immersing in water in order to improve the peelability of the polyimide laminate. These methods utilize the fact that the stress generated when the polyimide film rapidly expands due to water absorption or moisture absorption from the polyimide film surface acts on the interface between the polyimide film and the inorganic substrate. As a result, the adhesion at this interface is reduced and the peelability is improved.
- the present invention solves the above-described problem, and has good adhesion between the heat-resistant resin film including the flexible substrate layer and the inorganic substrate, and can easily separate the flexible substrate layer from the inorganic substrate in a short time. It aims at providing the manufacturing method of a laminated body and a flexible device using this laminated body.
- the present invention also provides good adhesion between a heat-resistant resin film containing a flexible substrate layer and an inorganic substrate, and even if a gas barrier layer is formed on the flexible substrate layer, the flexible substrate layer can be easily and quickly formed. It is an object of the present invention to provide a laminate that can be separated from an inorganic substrate, and a method for manufacturing a flexible device using the laminate.
- the present invention also provides good adhesion between a heat-resistant resin film including a flexible substrate layer and an inorganic substrate, and even if a member such as an electronic element or a wiring is formed on the flexible substrate layer, it is easy and short.
- An object of the present invention is to provide a laminate capable of separating a flexible substrate layer from an inorganic substrate and a method for producing a flexible device using the laminate.
- laminate inorganic substrate
- the present invention has the following purpose.
- a laminate having an inorganic substrate and a heat-resistant resin film formed on the inorganic substrate the laminate having the following characteristics: (1)
- the heat resistant resin film has a flexible substrate layer and a sacrificial layer provided on an outer edge portion of the flexible substrate layer; (2)
- the adhesive strength between the flexible substrate layer and the inorganic substrate is 2 N / cm or less; (3) the adhesive strength between the sacrificial layer and the inorganic substrate is greater than 2 N / cm;
- the adhesive strength between the sacrificial layer and the inorganic substrate becomes 2 N / cm or less by post-processing.
- the laminate in which the heat-resistant resin is a polyimide resin.
- the laminated body in which the post-treatment is a water absorption treatment.
- the laminated body in which a part of the inorganic substrate is subjected to an adhesion improving process in advance, and a sacrificial layer is formed on the surface subjected to the adhesive improving process.
- the laminate in which the adhesion improving treatment is at least one of a roughening treatment and a silane coupler treatment.
- the laminate After forming one or more members selected from electronic elements and wirings on the surface of the flexible substrate layer of the heat-resistant resin film in the laminate, the laminate is post-treated to provide the members from the inorganic substrate.
- a method for producing a flexible device characterized in that a flexible device is obtained by peeling off the heat resistant resin film and then cutting and removing the sacrificial layer.
- One or more members selected from electronic elements and wirings are formed on the surface of the flexible substrate layer of the heat-resistant resin film in the laminate, and cut along the outer periphery of the flexible substrate layer in the heat-resistant resin film provided with the member. And after dividing the flexible substrate layer portion and the sacrificial layer portion in the heat resistant resin film, the flexible substrate layer portion in the heat resistant resin film is peeled off to obtain a flexible device and to post-process the sacrificial layer
- the manufacturing method of the flexible device characterized by peeling and removing from an inorganic substrate by this.
- the flexible substrate layer can be easily peeled off without any treatment, while the sacrificial layer integrally formed on the outer edge portion of the flexible substrate layer cannot be easily peeled off as it is.
- the treatment makes it easy to peel off. For this reason, a flexible device and a flexible wiring board can be easily manufactured using this laminated body.
- FIG. 1 (A) is a schematic diagram (cross-sectional view) of the laminate of one embodiment according to the present invention, and (B) shows only the inorganic substrate in the laminate of FIG. FIG. (A) And (B) is a schematic diagram (sectional drawing) of the heat resistant resin film for demonstrating an example of the method of manufacturing a flexible substrate using the laminated body of FIG. 1 (A).
- A) And (B) is the schematic diagram (sectional drawing) of the heat resistant resin film for demonstrating another example of the method of manufacturing a flexible substrate using the laminated body of FIG. 1 (A).
- the laminate of the present invention has a heat resistant resin film formed on an inorganic substrate.
- the inorganic substrate used here is not limited to a glass substrate, a metal substrate such as copper or aluminum, or a ceramic substrate such as alumina, but a glass substrate excellent in light transmittance is preferably used.
- the glass substrate for example, soda lime glass, borosilicate glass, alkali-free glass or the like can be used, and among these, an alkali-free glass substrate can be preferably used.
- the thickness of the inorganic substrate is preferably 0.3 to 5.0 mm. If the thickness is less than 0.3 mm, the handling property of the substrate may be lowered. Moreover, productivity may fall when thickness is thicker than 5.0 mm.
- the laminate 100 of the present invention has a heat-resistant resin film 2 laminated on an inorganic substrate 1, and the heat-resistant resin film 2 can be used as a flexible substrate and a flexible substrate layer 21.
- the sacrificial layer 22 is provided on the outer edge of the flexible substrate layer 21.
- FIG. 1A is a schematic view (cross-sectional view) of a laminate according to an embodiment of the present invention.
- FIG. 1 (B) is a schematic sketch when only the inorganic substrate in the laminate of FIG. 1 (A) is viewed from above in the drawing.
- the adhesive strength between the sacrificial layer 22 and the inorganic substrate 1 is higher than the adhesive strength between the flexible substrate layer 21 and the inorganic substrate 1.
- the surface of the inorganic substrate 1 in contact with the sacrificial layer 22 is preferably subjected to an adhesion improving process described later.
- “XXXXXX” in FIG. 1A and the lattice region 220 in FIG. 1B are regions where the sacrificial layer 22 is formed on the surface of the inorganic substrate 1 and are subjected to an adhesion improving process. It shows that.
- the adhesiveness of the heat resistant resin film 2 to the inorganic substrate 1 is lowered. For this reason, when a member such as an electronic element is formed on the heat resistant resin film before the heat resistant resin film is peeled from the inorganic substrate, the heat resistant resin film is peeled off and the working efficiency is lowered.
- the area of the sacrificial layer 22 is preferably 10% or more and more preferably 20% or more with respect to the area of the heat-resistant resin film 2 from the viewpoint of the adhesion of the heat-resistant resin film 2 to the inorganic substrate 1. And more preferably 50% or more.
- the upper limit of the area of the sacrificial layer 22 is not particularly limited, but from the viewpoint of reducing material loss, the area of the sacrificial layer is usually less than 100% with respect to the area of the heat-resistant resin film, preferably 80% or less, more preferably 60% or less.
- the area of the sacrificial layer is the area of the formation region of the sacrificial layer 22 on the surface of the inorganic substrate 1, and is abbreviated as a frame-shaped lattice region 220 (hereinafter referred to as “frame region”) in FIG. Is equal to) area.
- the area of the heat resistant resin film is the area of the formation region of the resin film 2 on the surface of the inorganic substrate 1.
- the formation region 220 of the sacrificial layer 22 has a frame shape, and the sacrificial layer 22 is formed on all the outer edge portions of the flexible substrate layer 21, but the sacrificial layer 22 is flexible in the present invention. It does not have to be formed on all outer edges of the substrate layer 21. In the present invention, the sacrificial layer 22 may not be formed at a part of the outer edge portion of the flexible substrate layer 21 as long as the adhesion of the heat resistant resin film 2 is ensured.
- the heat-resistant resin film 2 has a square shape, but has any shape depending on the shape of the flexible substrate layer 21 obtained from the laminate of the present invention. Also good. For example, it may have a circular shape or a rectangular shape.
- the shape of the heat-resistant resin film 2 and the flexible substrate layer 21 is usually a square shape or a rectangular shape.
- the width W1 (see FIG. 1 (B)) of the sacrificial layer 22 is usually 2 mm or more, particularly 2 mm or more and 100 mm or less, and from the viewpoint of an even better balance between the adhesion and peelability of the heat-resistant resin film 2, Preferably they are 3 mm or more and 80 mm or less, More preferably, they are 4 mm or more and 50 mm or less.
- the width W2 (see FIG. 1B) of the flexible substrate layer 21 may be determined according to the dimensions of the desired flexible substrate or flexible device, and is usually 10 to 300 mm. From the viewpoint of an even better balance between releasability and peelability, the thickness is preferably 100 to 200 mm.
- the adhesive strength between the flexible substrate layer 21 and the inorganic substrate 1 is 2 N / cm or less, preferably 1 N / cm or less, and more preferably 0.5 N / cm or less.
- the lower limit of the adhesive strength between the flexible substrate layer and the inorganic substrate is not particularly limited, and the lower the better.
- the adhesive strength between the flexible substrate layer and the inorganic substrate is usually 0 N / cm or more.
- the adhesion strength of the sacrificial layer 22 with the inorganic substrate 1 is more than 2 N / cm, preferably 3 N / cm or more, and more preferably 4 N / cm or more. Since the sacrificial layer has such an adhesive strength, it is possible to ensure good adhesion between the sacrificial layer and the inorganic substrate, and thus ensure adhesion between the entire heat-resistant resin film including the sacrificial layer and the inorganic substrate. be able to.
- the adhesive strength is 2 N / cm or less, when a member such as an electronic element is formed on the flexible substrate layer before the separation of the flexible substrate layer from the inorganic substrate, the flexible substrate layer is peeled off and the working efficiency is lowered. To do.
- the upper limit value of the adhesive strength between the sacrificial layer and the inorganic substrate is not particularly limited, and the higher the better. In order to ensure such adhesive strength, it is preferable to perform an adhesion improving treatment on the surface of the frame region 220 of the inorganic substrate, for example, a glass substrate, in contact with the sacrificial layer. Such treatment increases the adhesive strength of the sacrificial layer.
- the adhesive strength of the sacrificial layer with the inorganic substrate is usually 50 N / cm or less, particularly 10 N / cm or less.
- the adhesion improving treatment is a surface treatment of the inorganic substrate for improving the adhesion with the heat resistant resin film 2.
- the portion formed on the adhesion improving surface is the sacrificial layer 22. Therefore, the adhesion improving process is performed on the region where the sacrificial layer is desired to be formed on the inorganic substrate surface.
- adhesion improving process for example, at least one of a roughening process and a coupler process is performed. From the viewpoint of further improving the adhesiveness, a coupler treatment is preferably performed after a roughening treatment.
- roughening of the inorganic substrate can be achieved by using a known treatment method as disclosed in, for example, JP-A-2013-149406. Specifically, the roughening can be performed by chemical etching treatment, polishing treatment, sandblast treatment, plasma treatment, laser treatment, or the like. Since the surface area of the inorganic substrate is increased by the roughening treatment, an increase in the adhesive strength is physically achieved. Of these roughening treatments, a chemical etching treatment is preferred.
- etching treatment for example, it is preferable to perform an etching treatment at 20 to 40 ° C. for about 1 to 60 minutes using an aqueous solution containing 0.5 to 8 wt% hydrofluoric acid.
- the surface roughness of the roughened inorganic substrate (Ra based on JIS B 0601-1994) is preferably about 0.05 to 0.8 ⁇ m.
- the other portion may be roughened by masking the other portion with a release film or the like.
- Coupler treatment is a treatment in which an adhesion improver such as a coupler is applied to the surface of an inorganic substrate to form a film of the coupler.
- an adhesion improver such as a coupler
- the surface of the inorganic substrate and the heat-resistant resin film, particularly the sacrificial layer are chemically bonded via the coupler film, so that an increase in adhesive strength is achieved.
- a silane coupler As the coupler, a silane coupler, a titanium coupler, an aluminum coupler, or the like can be used, but a silane coupler treatment using a silane coupler is preferable.
- silane coupler is not limited.
- amine silane coupler epoxy silane coupler, vinyl silane coupler, styrene silane coupler, (meth) acrylic silane coupler, chloro silane coupler, mercapto silane.
- examples include couplers, sulfide silane couplers, isocyanate silane couplers, and isocyanurate silane couplers.
- amine-based or epoxy-based silane couplers particularly N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, N -2- (Aminoethyl) -3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N- (1,3-dimethylbutylidene)
- Amine-based silane couplers such as propylamine, aminophenyltrimethoxysilane, aminophenethyltrimethoxysilane, aminophenylaminomethylphenethyltrimethoxysilane; 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-gly
- the silane coupler may be used alone or in combination of two or more.
- the adhesion strength can be further increased by subjecting the surface of the roughened inorganic substrate to a silane coupler treatment.
- the silane coupler is dissolved in a solvent to form a solution, which is applied to an inorganic substrate and dried.
- the solvent used is not limited, but an amide solvent such as N-methyl-2-pyrrolidone (NMP), N, N-dimethylformamide (DMF), N, N-dimethylacetamide (DMAc) can be preferably used.
- the silane coupler concentration of the silane coupler solution is preferably 0.5 to 5% by mass.
- Coating amount of coupler to be formed is preferably in a 10 ⁇ 1000mg / m 2, more preferably 100 ⁇ 500mg / m 2.
- the other portion may be masked with a release film or the like to perform the coupler treatment.
- the sacrificial layer 22 having the adhesive strength as described above can be peeled from the inorganic substrate by performing post-processing described later.
- the sacrificial layer exhibits, for example, the following adhesive strength after the moisture absorption treatment.
- the adhesive strength of the sacrificial layer after the post-treatment with the inorganic substrate is 2 N / cm or less, preferably 1 N / cm or less, more preferably 0.5 N / cm or less, and 0.1 N / cm. More preferably, it is as follows. Since the sacrificial layer is bonded to the inorganic substrate with such low adhesive strength by post-processing, the sacrificial layer can be easily peeled from the inorganic substrate.
- the lower limit value of the adhesive strength after post-treatment with the inorganic substrate of the sacrificial layer is not particularly limited, and the lower the better.
- the adhesive strength after post-treatment with the inorganic substrate of the sacrificial layer is usually 0 N / cm or more.
- the adhesive strength referred to in the present invention is a value measured by performing a 180 ° peel test on the adhesive strength between layers based on JIS K6854-2.
- the present invention does not prevent the flexible substrate layer 21 and the sacrificial layer 22 from being made of different constituent materials prepared so as to achieve a predetermined adhesive strength with the inorganic substrate.
- the layer 22 is usually made of the same constituent material.
- the adhesive strength between the flexible substrate layer 21 and the inorganic substrate 1 is controlled by selecting the constituent material, and sacrifice is performed.
- the adhesive strength between the layer 22 and the inorganic substrate 1 is controlled by selecting the constituent material and performing the adhesion improving process.
- the heat-resistant resin film 2 used for the flexible substrate layer 21 and the sacrificial layer 22 is a heat-resistant resin film.
- the heat resistant resin refers to a resin having a glass transition temperature measured by DSC (differential scanning calorimetry) of 200 ° C. or higher, and the glass transition temperature of the heat resistant resin is preferably 300 ° C. or higher, and more preferably 350 ° C. or higher.
- the heat resistant resin include polyimide resins, polysulfone resins, polyether sulfone resins, polyarylate resins, and the like.
- a polyimide resin is preferably used as the heat resistant resin.
- the polyimide resin is a resin having an imide bond in the main chain, and specific examples include polyimide, polyamideimide, polyesterimide, etc., but are not limited thereto, and a resin having an imide bond in the main chain. Any resin can be used. These resins are usually used alone, but two or more kinds may be mixed and used.
- the polyimide it is possible to use a precursor type polyimide or a solvent soluble type polyimide which is obtained by thermally curing a polyimide precursor such as polyamic acid dissolved in a solvent, and a precursor type polyimide can be preferably used.
- the polyimide resin preferably has 50 mol% or more of structural units derived from imide bonds (provided that all the structural units are 100 mol%).
- polyimide resin Commercially available products may be used as the polyimide resin. That is, for example, “U imide AR”, “U imide AH”, “U imide BH”, “U imide CR”, “U imide CH” (all manufactured by Unitika) and U varnish A (manufactured by Ube Industries) Polyamic acid type varnish such as “Rika Coat SN-20” (manufactured by Shin Nippon Rika Co., Ltd.) and / or “Matrimid 5218” (manufactured by Huntsman), etc. Polyamideimide varnish such as 11NN (Toyobo Co., Ltd.) can be used.
- the precursor-type polyimide is a polyimide precursor solution obtained by reacting approximately equimolar amounts of tetracarboxylic acid and / or dianhydride and diamine as raw materials in a solvent, and this is applied and dried.
- a polyimide layer can be obtained by thermosetting (imidization).
- the reaction temperature at the time of producing this polyimide precursor solution is preferably ⁇ 30 to 60 ° C., more preferably ⁇ 15 to 40 ° C.
- the order of addition of the monomer and the solvent is not particularly limited, and may be any order.
- tetracarboxylic acid and / or dianhydride thereof examples include pyromellitic acid, 3,3 ′, 4,4′-biphenyltetracarboxylic acid, 3,3 ′, 4,4′-benzophenonetetracarboxylic acid, 3,3 ', 4,4'-diphenylsulfone tetracarboxylic acid, 3,3', 4,4'-diphenyl ether tetracarboxylic acid, 2,3,3 ', 4'-benzophenone tetracarboxylic acid, 2,3, 6,7-naphthalenetetracarboxylic acid, 1,4,5,7-naphthalenetetracarboxylic acid, 1,2,5,6-naphthalenetetracarboxylic acid, 3,3 ′, 4,4′-diphenylmethanetetracarboxylic acid, 2,2-bis (3,4-dicarboxyphenyl) propane, 2,2-bis (3,4-dicarboxy
- pyromellitic acid, 3,3 ′, 4,4′-biphenyltetracarboxylic acid or their dianhydrides are particularly preferably used.
- diamine examples include p-phenylenediamine, m-phenylenediamine, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenylmethane, 3,3'-dimethyl-4,4 '.
- p-phenylenediamine, 4,4′-diaminodiphenyl ether, and 2,2-bis [4- (4-aminophenoxy) phenyl] propane are particularly preferably used.
- the solid content concentration of the polyimide precursor is preferably 1 to 50% by mass, and more preferably 5 to 30% by mass.
- This polyamic acid solution may be partially imidized.
- the viscosity of the polyimide precursor solution of the present invention at 25 ° C. is preferably 1 to 150 Pa ⁇ s, more preferably 5 to 100 Pa ⁇ s.
- the solvent used in the polyimide precursor solution is not limited as long as it is a solvent that dissolves the polyimide precursor, and examples thereof include amide solvents, ether solvents, and water-soluble alcohol solvents.
- amide solvent examples include N-methyl-2-pyrrolidone (NMP), N, N-dimethylformamide (DMF), N, N-dimethylacetamide (DMAc) and the like.
- ether solvents include 2-methoxyethanol, 2-ethoxyethanol, 2- (methoxymethoxy) ethoxyethanol, 2-isopropoxyethanol, 2-butoxyethanol, tetrahydrofurfuryl alcohol, diethylene glycol, diethylene glycol monomethyl ether, diethylene glycol monoethyl Ether, diethylene glycol monobutyl ether, triethylene glycol, triethylene glycol monoethyl ether, tetraethylene glycol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, dipropylene glycol, dipropylene glycol monomethyl ether, dipropylene glycol Monoethyl ether, tripropylene glycol monomethyl ether, polyethylene Glycol, polypropylene glycol, tetrahydrofuran, dioxane, 1,2-dimethoxyethane, diethylene glycol dimethyl ether, diethylene glycol diethyl ether.
- water-soluble alcohol solvents include methanol, ethanol, 1-propanol, 2-propanol, tert-butyl alcohol, ethylene glycol, 1,2-propanediol, 1,3-propanediol, 1,3-butanediol, , 4-butadiol, 2,3-butanediol, 1,5-pentanediol, 2-butene-1,4-diol, 2-methyl-2,4-pentanediol, 1,2,6-hexanetriol, di- Acetone alcohol etc. are mentioned.
- solvents can be used as a mixture of two or more.
- particularly preferred examples include N, N-dimethylacetamide and N-methyl-2-pyrrolidone as the sole solvent, and examples of the mixed solvent include N, N-dimethylacetamide and N—.
- examples include combinations of methyl-2-pyrrolidone, N-methyl-2-pyrrolidone and methanol, N-methyl-2-pyrrolidone and 2-methoxyethanol, and the like.
- a method for producing a heat-resistant resin film using a polyimide precursor solution will be described.
- the flexible substrate can be obtained by applying the following description mutatis mutandis. It is obvious that the heat resistant resin film 2 having the layer 21 and the sacrificial layer 22 can be manufactured.
- the polyimide precursor solution is applied on the inorganic substrate 1 in which the frame region 220 has been subjected to adhesion improving treatment, dried, and then thermoset to imidize.
- the polyimide precursor solution application region 230 is the entire inner region including the frame region 220 in FIG. 1B, but the frame region 220 is an area including the entire inner region including the frame region 220. It may be applied beyond. Drying as used herein refers to reducing the amount of solvent in the polyimide precursor solution by means such as heating. At this time, it is preferable to remove the solvent until the solid content concentration in the coating film is 50% by mass or more and 90% by mass or less.
- thermosetting means the process of converting a polyimide precursor into a polyimide.
- a temperature range of 300 to 450 ° C. is suitable for thermosetting.
- a higher fatty acid such as stearic acid or palmitic acid
- a release agent such as an amide and / or metal salt thereof can be blended in the polyimide precursor solution.
- stearic acid is preferred.
- the greater the compounding amount of the release agent the smaller the adhesive strength between the flexible substrate layer and the sacrificial layer of the heat resistant resin film.
- the smaller the compounding amount of the release agent the greater the adhesive strength between the flexible substrate layer and the sacrificial layer of the heat resistant resin film.
- the blending amount of the release agent in the polyimide precursor solution is not particularly limited as long as the flexible substrate layer and the sacrificial layer of the heat-resistant resin film achieve a predetermined adhesive strength, and usually 0.01 to 2 with respect to the polyimide mass. It is preferable to add mass%, more preferably 0.1 to 1 mass%.
- the polyimide mass means the total polyimide mass in terms of polyimide contained in the polyimide precursor solution.
- an adhesion improver such as the above-described silane coupler can be blended in the solution as necessary in order to obtain the above-mentioned adhesive strength.
- the type of the silane coupler is not limited, but the above-described amine type or epoxy type is preferable.
- the greater the compounding amount of the adhesion improver the greater the adhesive strength between the flexible substrate layer and the sacrificial layer of the heat resistant resin film.
- the smaller the compounding amount of the adhesion improver the smaller the adhesive strength between the flexible substrate layer and the sacrificial layer of the heat resistant resin film.
- the compounding amount of the adhesion improver in the polyimide precursor solution is preferably 0.05 to 0.5% by mass, more preferably 0.05 to 0.2% by mass, and still more preferably based on the polyimide mass. Is 0.1 to 0.2 mass%.
- the polyimide precursor solution can be applied continuously or in a single sheet.
- Continuous coating can be performed using a coating machine such as a die coater, lip coater, comma coater, gravure coater, reverse roll coater.
- a coating machine such as a die coater, lip coater, comma coater, gravure coater, reverse roll coater.
- Continuous coating can also be performed using a coating machine such as a bar coater, a doctor blade coater, or a spin coater.
- a coating machine such as a bar coater, a doctor blade coater, or a spin coater.
- the thickness after thermosetting is preferably 5 to 200 ⁇ m, and more preferably 10 to 100 ⁇ m.
- the thickness of the heat resistant resin film is the thickness of the flexible substrate layer and the sacrificial layer, and the thickness of the flexible substrate layer and the sacrificial layer is equal.
- this gas barrier layer can be provided on the surface of the flexible substrate layer 21.
- a film made of an inorganic oxide such as silicon oxide, aluminum oxide, silicon carbide, silicon oxycarbide, silicon carbonitride, silicon nitride, or silicon nitride oxide can be used, but a film made of silicon oxide is preferable. That's right.
- the method for forming these films include known methods such as sputtering, vacuum deposition, thermal CVD, plasma CVD, and photo CVD, but sputtering is preferred.
- the thickness of the gas barrier layer is preferably 10 to 100 nm, and more preferably 20 to 50 nm.
- the sacrificial layer 22 constituting the heat resistant resin film 2 is firmly adhered to the inorganic substrate 1, the adhesiveness of the entire heat resistant resin film 2 to the inorganic substrate 1 can be ensured.
- the heat-resistant resin film 2 of the present invention is preferably transparent.
- the light transmittance at 500 nm which is an index of transparency, is preferably 70% or more, and more preferably 80% or more.
- the laminate 100 according to the present invention can easily peel the flexible substrate layer 21 and the sacrificial layer 22 from the inorganic substrate 1 by its unique structure and post-processing described later.
- the peeled flexible substrate layer 21 is useful as a flexible substrate.
- one or more members selected from electronic elements and wirings in this specification, simply “members such as electronic elements” are formed on the surface of the flexible substrate layer 21. ”
- the peeled flexible substrate layer can be used as a flexible device.
- a method for forming a member such as an electronic element a method known in the field of electronic devices using a heat-resistant resin film as a flexible substrate can be employed.
- the method for forming the gas barrier layer is the same as that described above.
- the flexible substrate 21 layer obtained by previously forming a member (not shown) such as an electronic element on the surface of the flexible substrate layer 21 of the laminate 100 before the post-processing is flexible.
- a member such as an electronic element
- a gas barrier layer is preferably formed on the surface of the flexible substrate layer 21.
- a predetermined portion of the heat resistant resin film is cut to divide the flexible substrate layer 21 portion and the sacrificial layer 22 portion of the heat resistant resin film. That is, as shown in FIG. 3A, the notch 200 is formed along the outer periphery 211 of the flexible substrate layer 21.
- the notch 200 does not necessarily have to be formed along the outer periphery 211 of the flexible substrate layer 21, and may be formed in the inner region of the flexible substrate layer 21 as long as a flexible substrate having a desired size is obtained.
- the cutting method is not particularly limited as long as the cutting 200 reaching the inorganic substrate 1 can be formed, and examples thereof include a method using a commercially available cutter and a method using laser light irradiation.
- 3A and 3B are schematic views (cross-sectional views) of a heat resistant resin film for explaining another example of a method for producing a flexible substrate using the laminate of FIG. 1A.
- the flexible substrate layer 21 is peeled to obtain a flexible substrate.
- a specific peeling method also in this embodiment, it is possible to adopt a method of manually peeling from the end and a method of using a mechanical device such as a drive roll or a robot.
- the flexible member obtained by previously forming a member (not shown) such as an electronic element on the surface of the flexible substrate 21 of the heat-resistant resin film of the laminate 100 before the division by cutting.
- the substrate layer is useful as a flexible device.
- the sacrificial layer 22 (FIG. 3B) remaining on the inorganic substrate 1 can be removed from the inorganic substrate 1 by post-processing described later.
- a method for specifically peeling off the sacrificial layer 22 a method of peeling from the end portion with a hand as described above and a method of using a mechanical device such as a drive roll or a robot can be employed.
- a water absorption treatment method is preferably used.
- the water absorption process is a process in which the sacrificial layer 22 is caused to undergo volume expansion by moisture absorption or water absorption treatment, and the adhesive strength at the interface is reduced due to stress at the interface caused by the volume expansion.
- the sacrificial layer 22 is preferably peeled off by a water absorption process, particularly a moisture absorption process, but as a post-process, for example, the sacrificial layer 22 is irradiated with laser light, infrared light, ultraviolet light, flash light, or the like. It is also possible to perform peeling.
- the moisture absorption treatment includes a moisture absorption treatment step for holding at least the sacrificial layer in a high temperature and high humidity environment.
- the moisture absorption conditions are not particularly limited, but the moisture absorption treatment step is preferably performed at a relative humidity of 70% or more, more preferably 80% or more, and a moisture absorption temperature of preferably 70 ° C. or more, more preferably 80 ° C. or more. . Further, pressurized water vapor exceeding 100 ° C. can be used, but it is preferable to perform the moisture absorption treatment step at 100 ° C. or less.
- the moisture absorption treatment time is preferably 1 hour or longer, more preferably 3 hours or longer, and even more preferably 5 hours or longer.
- the upper limit of the moisture absorption treatment time is not particularly limited as long as the sacrificial layer is peeled off, but the moisture absorption treatment step is usually performed for 20 hours or less, preferably 15 hours or less, more preferably 12 hours or less.
- the heat resistant resin film whose volume is expanded by moisture absorption can be rapidly contracted by dehumidification.
- stress is generated in the sacrificial layer that expands and contracts, and the strength at the interface of the sacrifice layer in contact with the inorganic substrate that hardly changes in volume due to moisture absorption and desorption is significantly reduced.
- the sacrificial layer can be more easily peeled off.
- This moisture absorption / desorption can be further improved by repeating two or more times.
- the sacrificial layer can be easily peeled by performing moisture absorption and desorption 1 to 3 times.
- the decompression conditions are not particularly limited, but preferably the degree of decompression is 100 Torr or less, more preferably 50 Torr or less, more preferably 10 Torr or less, and the temperature is preferably 70 ° C. or more, more preferably 80 ° C. or more. .
- the temperature during the decompression treatment may be the same as or different from the moisture absorption treatment temperature, but is preferably the same.
- the decompression time is preferably 1 hour or longer, more preferably 3 hours or longer, and even more preferably 5 hours or longer.
- the upper limit of the reduced pressure treatment time is not particularly limited as long as peeling of the sacrificial layer is promoted, but the reduced pressure treatment step is usually performed for 20 hours or less, preferably 15 hours or less, more preferably 12 hours or less.
- the water absorption treatment includes at least a water absorption treatment step of immersing and holding the sacrificial layer in a water bath.
- Water absorption conditions are not particularly limited, but the water temperature is preferably 20 ° C. or higher and 80 ° C., more preferably 30 ° C. or higher and 60 ° C. or lower.
- the water absorption treatment time is preferably 3 hours or longer, more preferably 5 hours or longer, and even more preferably 10 hours or longer.
- the upper limit of the water absorption treatment time is not particularly limited as long as the sacrificial layer is peeled off, but the water absorption treatment step is usually performed for 20 hours or less, preferably 15 hours or less, more preferably 12 hours or less.
- the sacrificial layer whose volume is expanded by water absorption can be rapidly contracted by dehydration.
- stress is generated in the sacrificial layer that expands and contracts, and the strength at the interface of the sacrificial layer in contact with the inorganic substrate that hardly changes in volume due to absorption and dehydration is significantly reduced.
- the sacrificial layer can be more easily peeled off.
- This absorption and dehydration can be further improved by repeating the absorption and dehydration twice or more.
- the sacrificial layer can be easily peeled by performing absorption and dehydration 1 to 3 times.
- the dehydration conditions under the reduced pressure conditions are not particularly limited, but the reduced pressure is preferably 100 Torr or less, more preferably 50 Torr or less, still more preferably 10 Torr or less, and the temperature is preferably 70 ° C. or more, more preferably 80 ° C. or more. Process.
- the temperature during the decompression treatment may be the same as or different from the water absorption treatment temperature, but is preferably the same.
- the decompression time is preferably 1 hour or longer, more preferably 3 hours or longer, and even more preferably 5 hours or longer.
- the upper limit of the reduced pressure treatment time is not particularly limited as long as peeling of the heat resistant resin film 2 is promoted, but the reduced pressure treatment step is usually performed for 20 hours or less, preferably 15 hours or less, more preferably 12 hours or less.
- the laminate of the present invention can easily peel off the sacrificial layer from the inorganic substrate by a simple post-treatment due to the unique structure, and is suitable for manufacturing flexible devices and flexible wiring board devices. Can be used.
- the laminates L-2 and L-4 had good adhesion.
- the laminates L-1 and L-3 had poor adhesion, that is, good peelability.
- the laminates L-2 and L-4 which had good adhesion before the moisture absorption treatment, can be made into a laminate with good peelability by performing the moisture absorption treatment.
- Example 1 As shown in FIG. 1 (B), only the frame region 220 of the non-alkali glass plate 1 having a thickness of 0.7 mm is subjected to etching treatment and silane coupler treatment in the same manner as in Reference Example 2 to improve adhesion only to the frame region 220.
- a treated glass plate G-3 was obtained.
- the width of the portion subjected to the adhesion improving process (that is, the width W1 of the frame region 220) is 4 cm
- the area of the coating region 230 including the frame region 220 is about 576 cm 2 (24 cm (W3) ⁇ 24 cm ( W3))
- the area of the flexible substrate layer forming region 210 not including the frame region 220 was about 400 cm 2 .
- the same polyimide solution A-1 as in Reference Example 1 is formed so that the total thickness of the film after thermosetting is 30 ⁇ m. This was applied by a bar coater and dried at 130 ° C. for 10 minutes to form a polyimide precursor film. Next, after raising the temperature from 100 ° C. to 360 ° C. over 2 hours under a nitrogen gas stream, heat treatment is carried out at 360 ° C. for 2 hours, and the polyimide precursor is thermally cured and imidized, whereby the polyimide layer is laminated and integrated. To obtain a laminate M-1.
- Example 2 A laminate M-2 was obtained in the same manner as in Example 1 except that the polyimide solution A-1 was changed to the polyimide solution A-2.
- Example 3 In the stacked bodies M-1 and M-2, as shown in FIG. 3A, a cut 200 was made along the outer periphery 211 of the flexible substrate layer 21, and the flexible substrate layer 21 and the sacrificial layer 22 were divided. When a part of the outer periphery 211 of the divided flexible substrate layer 21 was pulled by hand, the flexible substrate layer 21 could be easily peeled from the glass substrate 1 as shown in FIG. Thereafter, the glass substrate 1 (see FIG. 3B) on which the sacrificial layer 22 remained was held for 8 hours under conditions of a relative humidity of 85% and a temperature of 80 ° C., thereby absorbing the sacrificial layer 22. Thereafter, drying was performed at 100 ° C. under normal pressure for 2 hours to dehumidify the polyimide that had absorbed moisture. As a result, the sacrificial layer 22 was easily peeled off by hand in both of the laminates M-1 and M-2.
- Example 4 The laminates M-1 and M-2 were held for 10 hours under conditions of a relative humidity of 95% and a temperature of 90 ° C. to absorb the polyimide film 2. Thereafter, a reduced pressure treatment for 10 hours was performed at the same temperature under a reduced pressure of 5 Torr to dehumidify the polyimide film 2 that had absorbed moisture. When a part of the outer periphery of the polyimide film 2 was pulled by hand, the polyimide film 2 could be easily peeled from the glass substrate 1 as shown in FIG. Then, the flexible substrate layer 21 was obtained by cutting and removing the sacrificial layer 22 portion.
- the sacrificial layer 22 can be easily removed from the inorganic substrate 1 by, for example, water absorption treatment even though the heat-resistant resin film 2 is firmly bonded onto the inorganic substrate 1. Therefore, the flexible substrate layer 21 can be easily obtained, and the inorganic substrate 1 can be easily reused. Therefore, the laminate of the present invention is useful for producing a flexible substrate for electronic devices. Even if the gas barrier layer is formed on the surface of the heat-resistant resin film 2 that constitutes the laminate, particularly the flexible substrate layer 21, the production method of the present invention can provide adhesion before post-treatment and after post-treatment. Good peelability. Therefore, a flexible device and a flexible wiring board in which a member such as an electronic element is formed on the flexible substrate layer 21 as a flexible substrate can be easily manufactured.
- Inorganic substrate 2 Heat-resistant resin film 21: Flexible substrate layer 210: Flexible substrate layer forming region 211: Outer periphery of flexible substrate layer 22: Sacrificial layer 220: Frame region (sacrificial layer forming region)
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Laminated Bodies (AREA)
- Liquid Crystal (AREA)
Abstract
Description
無機基板および該無機基板上に形成された耐熱樹脂フィルムを有する積層体であって、以下の特徴を有する積層体:
(1)耐熱樹脂フィルムがフレキシブル基板層および該フレキシブル基板層の外縁部に設けられた犠牲層を有する;
(2)フレキシブル基板層と前記無機基板との接着強度が2N/cm以下である;
(3)犠牲層と前記無機基板との接着強度が2N/cm超である;
(4)犠牲層と前記無機基板との接着強度が、後処理により、2N/cm以下となる。
本発明の積層体は、無機基板上に耐熱樹脂フィルムが形成されたものである。ここで用いられる無機基板としては、ガラス基板、銅、アルミ等の金属基板、アルミナ等のセラミック基板等制限はないが、光透過性に優れたガラス基板が好ましく用いられる。ガラス基板としては、例えば、ソーダライムガラス、ホウ珪酸ガラス、無アルカリガラス等を用いることができ、これらのなかで、無アルカリガラス基板を好ましく用いることができる。
本発明に係る積層体100は、その特有の構造および後述する後処理により、フレキシブル基板層21および犠牲層22を無機基板1から容易に剥離させることができる。剥離されたフレキシブル基板層21はフレキシブル基板として有用である。このとき、積層体100において少なくともフレキシブル基板層21を剥離する前に、フレキシブル基板層21表面に、電子素子および配線から選択される1以上の部材(本明細書中、単に「電子素子等の部材」という)を予め形成しておくことにより、剥離されたフレキシブル基板層をフレキシブルデバイスとすることができる。フレキシブルデバイスの製造に際し、電子素子等の部材形成前には、フレキシブル基板層21の表面に前記したガスバリア層を形成しておくことが好ましい。
ガスバリア層の形成方法は、前記した方法と同様である。
まず、本発明の積層体100に対して後述の後処理を行う。しかる後、図2(A)に示すように耐熱樹脂フィルム2を剥離する。具体的に剥離する方法としては、手で端部から引きはがす方法および駆動ロール、ロボット等の機械装置を用いる方法を採用することができる。その後、犠牲層22の部分を切断除去することにより、フレキシブル基板としてのフレキシブル基板層21を得る(図2(B))。図2(A)および(B)は、図1(A)の積層体を用いてフレキシブル基板を製造する方法の一例を説明するための耐熱樹脂フィルムの模式図(断面図)である。
まず、耐熱樹脂フィルムの所定の部位に切り込みを入れて、耐熱樹脂フィルムにおけるフレキシブル基板層21の部分と犠牲層22の部分とを分割する。すなわち、図3(A)に示すように、フレキシブル基板層21の外周211に沿って切り込み200を形成する。切り込み200は必ずしもフレキシブル基板層21の外周211に沿って形成されなければならないというわけではなく、所望寸法のフレキシブル基板が得られる限り、フレキシブル基板層21の内部領域で形成されてもよい。切り込み方法は無機基板1まで到達する切り込み200を形成できる限り特に限定されず、例えば、市販のカッターを用いる方法およびレーザ光の照射を用いる方法が挙げられる。図3(A)および(B)は、図1(A)の積層体を用いてフレキシブル基板を製造する方法の別の一例を説明するための耐熱樹脂フィルムの模式図(断面図)である。
後処理法としては、水吸収処理法を用いることが好ましい。水吸収処理とは、吸湿もしくは吸水処理により、犠牲層22に体積膨張を生じせしめ、この体積膨張に起因する界面での応力により界面での接着強度を低下させる処理である。本発明においては、犠牲層22は水吸収処理、特に吸湿処理により剥離することが好ましいが、後処理として、例えば、犠牲層22に、レーザ光、赤外線光、紫外線光、フラッシュ光等を照射することにより剥離を行うこともできる。
吸湿処理は高温高湿環境下で少なくとも犠牲層を保持する吸湿処理工程を含む。
吸水処理は少なくとも犠牲層を水浴中に浸漬し保持する吸水処理工程を含む。
ユニチカ社製UイミドAR(3,3’,4,4’-ビフェニルテトラカルボン酸二無水物とp-フェニレンジアミンとから得られるポリアミック酸型のポリイミド前駆体溶液であり、溶媒はNMP、固形分濃度は18質量%)を準備した。この溶液(ポリイミド溶液A-1とする)を厚さ0.7mmの表面が平滑な無アルカリガラス板(ガラス板G-1とする)の表面上に、熱硬化後のフィルムの厚さが30μmになるようにバーコータによって塗布し、130℃で10分間乾燥してポリイミド前駆体被膜を形成した。次いで、窒素ガス気流下で、100℃から360℃まで2時間かけて昇温した後、360℃で2時間熱処理し、ポリイミド前駆体を熱硬化させてイミド化した。これによって、ガラス基板と厚さ30μmのポリイミドフィルム層を有する積層体L-1を得た。
ガラス板G-1の表面を5質量%のフッ酸を含有する水溶液で30℃で30分浸漬して粗面化処理した。表面粗度Raは0.08μmであった。このガラス板の表面に、2質量%のシランカップラ(3-アミノプロピルトリメトキシシラン)を含有するNMP溶液を塗布、乾燥して、シランカップラの塗膜を形成した。ここで、シランカップラの被膜量は、300mg/m2であった。このガラス板を用い、参考例1と同様にして、ガラス基板と厚さ30μmのポリイミドフィルム層を有する積層体L-2を得た。
ポリイミド溶液A-1に、シランカップラ(3-アミノプロピルトリメトキシシラン)を、ポリイミド質量に対し0.05質量%を加え、均一に混合してポリイミド溶液A-2を得た。これを用いたこと以外、参考例1と同様にして、ガラス基板と厚さ30μmのポリイミドフィルム層を有する積層体L-3を得た。
ポリイミド溶液A-2を用いたこと以外は、参考例2と同様にして、ガラス基板と厚さ30μmのポリイミドフィルム層を有する積層体L-4を得た。
前記積層体L-1~L~4のガラス基板と耐熱樹脂フィルム層との層間の接着強度をJIS K6854に基づいて180°剥離試験により測定した。また、積層体のポリイミドフィルム端部に切り込みをいれ、そこから手で引っ張って容易にガラス板から剥離することができない場合、界面での密着性が「良好」、容易に剥離できる場合を密着性が「不良」と判定した。その結果を表1に示す。なお、表1において、接着強度が0.1N/cm以下の場合は正確な接着強度を特定することが困難なので、「0.1以下」と表記した。
密着性が良好であった積層体L-2、L-4を、相対湿度95%、温度90℃の条件で10時間保持し、ポリイミドフィルムを吸湿させた。その後、同温度で、5Torrの減圧下で10時間の減圧処理を行い、吸湿していたポリイミドを脱湿した。得られた積層体の層間の接着強度をJIS K6854に基づいて180°剥離試験により測定した。また、切り込みをいれたポリイミドフィルム端部から手で引っ張って容易にガラス板から剥離することができる場合、界面での剥離性が「良好」、容易に剥離できない場合を剥離性が「不良」と判定した。その結果を表2に示す。なお、表2において、接着強度が0.1N/cm以下の場合は正確な接着強度を特定することが困難なので、「0.1以下」と表記した。
図1(B)に示すように、厚さ0.7mmの無アルカリガラス板1の額縁領域220のみを参考例2と同様にエッチング処理およびシランカップラ処理を行い、額縁領域220のみに密着性向上処理が施されたガラス板G-3を得た。ここでこの密着性向上処理が施された部分の幅(すなわち額縁領域220の幅W1)は4cmとし、額縁領域220を含む塗布領域230の面積は、約576cm2(24cm(W3)×24cm(W3))、額縁領域220を含まないフレキシブル基板層形成領域210の面積は約400cm2とした。この額縁領域220を含む塗布ガラス板G-3の塗布領域230(約576cm2)に対して、参考例1と同様のポリイミド溶液A-1を、熱硬化後のフィルム全体の厚さが30μmになるようにバーコータによって塗布し、130℃で10分間乾燥してポリイミド前駆体被膜を形成した。次いで、窒素ガス気流下で、100℃から360℃まで2時間かけて昇温した後、360℃で2時間熱処理し、ポリイミド前駆体を熱硬化させてイミド化することにより、ポリイミド層を積層一体化し、積層体M-1を得た。
ポリイミド溶液A-1をポリイミド溶液A-2としたこと以外は、実施例1と同様にして、積層体M-2を得た。
積層体M-1、M-2において、図3(A)に示すように、フレキシブル基板層21の外周211に沿って切り込み200を入れ、フレキシブル基板層21と犠牲層22を分割した。分割されたフレキシブル基板層21の外周211の一部を手で引っ張った所、フレキシブル基板層21は、図3(B)に示すように、ガラス基板1から容易に剥離することができた。しかる後、犠牲層22が残ったガラス基板1(図3(B)参照)を、相対湿度85%、温度80℃の条件で8時間保持することにより、犠牲層22を吸湿させた。その後、常圧下、100℃で2時間乾燥を行い、吸湿していたポリイミドを脱湿したところ、積層体M-1、M-2共に、犠牲層22を手で容易に剥離できた。
積層体M-1、M-2を、相対湿度95%、温度90℃の条件で10時間保持し、ポリイミドフィルム2を吸湿させた。その後、同温度で、5Torrの減圧下で10時間の減圧処理を行い、吸湿していたポリイミドフィルム2を脱湿した。ポリイミドフィルム2の外周の一部を手で引っ張った所、ポリイミドフィルム2は、図2(A)に示すように、ガラス基板1から容易に剥離することができた。その後、犠牲層22の部分を切断除去することによりフレキシブル基板層21を得た。
2:耐熱樹脂フィルム
21:フレキシブル基板層
210:フレキシブル基板層形成領域
211:フレキシブル基板層の外周
22:犠牲層
220:額縁領域(犠牲層形成領域)
Claims (8)
- 無機基板および該無機基板上に形成された耐熱樹脂フィルムを有する積層体であって、以下の特徴を有する積層体:
(1)耐熱樹脂フィルムがフレキシブル基板層および該フレキシブル基板層の外縁部に設けられた犠牲層を有する;
(2)フレキシブル基板層と前記無機基板との接着強度が2N/cm以下である;
(3)犠牲層と前記無機基板との接着強度が2N/cm超である;
(4)犠牲層と前記無機基板との接着強度が、後処理により、2N/cm以下となる。 - 耐熱樹脂がポリイミド系樹脂である請求項1に記載の積層体。
- 後処理が水吸収処理である請求項1に記載の積層体。
- 無機基板の一部において、予め密着性向上処理が施されており、その密着性向上処理が施されている表面に犠牲層が形成されている請求項1~3のいずれかに記載の積層体。
- 密着性向上処理が粗面化処理またはシランカップラ処理の少なくとも一方の処理である請求項4に記載の積層体。
- 請求項1~5のいずれかに記載の積層体における耐熱樹脂フィルムのフレキシブル基板層の表面に、電子素子および配線から選択される1以上の部材を形成した後、該積層体を後処理することにより、無機基板から、前記部材を備えた耐熱樹脂フィルムを剥離し、その後、犠牲層の部分を切断除去することによりフレキシブルデバイスを得ることを特徴とするフレキシブルデバイスの製造方法。
- 請求項1~5のいずれかに記載の積層体における耐熱樹脂フィルムのフレキシブル基板層の表面に、電子素子および配線から選択される1以上の部材を形成し、前記部材を備えた耐熱樹脂フィルムにおけるフレキシブル基板層の外周に沿って切り込みを入れて、耐熱樹脂フィルムにおけるフレキシブル基板層の部分と、犠牲層の部分とを分割した後、耐熱樹脂フィルムにおけるフレキシブル基板層の部分を剥離して、フレキシブルデバイスを得るとともに、犠牲層を後処理することにより無機基板から剥離して除去することを特徴とするフレキシブルデバイスの製造方法。
- フレキシブル基板層の表面に、前記部材を形成する前に、ガスバリア層を形成する請求項6または7に記載のフレキシブルデバイスの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016548892A JP6571094B2 (ja) | 2014-09-19 | 2015-09-15 | 積層体およびフレキシブルデバイスの製造方法 |
KR1020177006725A KR20170056543A (ko) | 2014-09-19 | 2015-09-15 | 적층체 및 플렉시블 디바이스의 제조 방법 |
CN201580050325.3A CN107073883A (zh) | 2014-09-19 | 2015-09-15 | 层叠体及柔性器件的制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-190758 | 2014-09-19 | ||
JP2014190758 | 2014-09-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016043180A1 true WO2016043180A1 (ja) | 2016-03-24 |
Family
ID=55533217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/076118 WO2016043180A1 (ja) | 2014-09-19 | 2015-09-15 | 積層体およびフレキシブルデバイスの製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP6571094B2 (ja) |
KR (1) | KR20170056543A (ja) |
CN (1) | CN107073883A (ja) |
TW (1) | TWI673167B (ja) |
WO (1) | WO2016043180A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019131884A1 (ja) * | 2017-12-28 | 2019-07-04 | 宇部興産株式会社 | フレキシブルデバイス基板形成用ポリイミド前駆体樹脂組成物 |
CN111613580A (zh) * | 2020-05-21 | 2020-09-01 | 深圳市华星光电半导体显示技术有限公司 | 柔性基板的制备方法及柔性基板 |
WO2020226062A1 (ja) * | 2019-05-09 | 2020-11-12 | 三菱瓦斯化学株式会社 | 積層体 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6492140B1 (ja) * | 2017-09-22 | 2019-03-27 | ジオマテック株式会社 | 樹脂基板積層体及び電子デバイスの製造方法 |
CN108054297B (zh) * | 2017-12-12 | 2019-10-11 | 武汉华星光电半导体显示技术有限公司 | 柔性显示面板的制作方法 |
JP6955681B2 (ja) * | 2018-08-20 | 2021-10-27 | 東洋紡株式会社 | 積層体、及び、積層体の製造方法 |
CN111223399A (zh) * | 2018-11-27 | 2020-06-02 | 中华映管股份有限公司 | 柔性显示面板的制作方法 |
CN115551713A (zh) * | 2020-05-29 | 2022-12-30 | 东洋纺株式会社 | 包含透明高耐热膜的层叠体 |
CN112234019B (zh) * | 2020-10-20 | 2023-01-17 | 广东省科学院半导体研究所 | 转移膜、转移组件和微器件曲面转移方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007251080A (ja) * | 2006-03-20 | 2007-09-27 | Fujifilm Corp | プラスチック基板の固定方法、回路基板およびその製造方法 |
JP2011142168A (ja) * | 2010-01-06 | 2011-07-21 | Fujifilm Corp | 電子デバイスの製造方法および該電子デバイスに用いられる基板 |
JP2013168445A (ja) * | 2012-02-14 | 2013-08-29 | Kaneka Corp | 剥離層付き支持体、基板構造、電子デバイス、および電子デバイスの製造方法 |
JP2014022459A (ja) * | 2012-07-13 | 2014-02-03 | Asahi Kasei E-Materials Corp | 積層体及びフレキシブルデバイスの製造方法 |
WO2014119648A1 (ja) * | 2013-02-04 | 2014-08-07 | 東洋紡株式会社 | 積層体、積層体の製造方法、およびフレキシブル電子デバイスの製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013114685A1 (ja) * | 2012-02-01 | 2013-08-08 | 東洋紡株式会社 | 積層体とその製造方法及びそれを用いたデバイス構造体の製造方法 |
WO2014041816A1 (ja) * | 2012-09-14 | 2014-03-20 | 三井化学株式会社 | 透明ポリイミド積層体及びその製造方法 |
-
2015
- 2015-09-15 KR KR1020177006725A patent/KR20170056543A/ko unknown
- 2015-09-15 CN CN201580050325.3A patent/CN107073883A/zh active Pending
- 2015-09-15 WO PCT/JP2015/076118 patent/WO2016043180A1/ja active Application Filing
- 2015-09-15 JP JP2016548892A patent/JP6571094B2/ja active Active
- 2015-09-18 TW TW104130935A patent/TWI673167B/zh active
-
2019
- 2019-08-07 JP JP2019145323A patent/JP6725948B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007251080A (ja) * | 2006-03-20 | 2007-09-27 | Fujifilm Corp | プラスチック基板の固定方法、回路基板およびその製造方法 |
JP2011142168A (ja) * | 2010-01-06 | 2011-07-21 | Fujifilm Corp | 電子デバイスの製造方法および該電子デバイスに用いられる基板 |
JP2013168445A (ja) * | 2012-02-14 | 2013-08-29 | Kaneka Corp | 剥離層付き支持体、基板構造、電子デバイス、および電子デバイスの製造方法 |
JP2014022459A (ja) * | 2012-07-13 | 2014-02-03 | Asahi Kasei E-Materials Corp | 積層体及びフレキシブルデバイスの製造方法 |
WO2014119648A1 (ja) * | 2013-02-04 | 2014-08-07 | 東洋紡株式会社 | 積層体、積層体の製造方法、およびフレキシブル電子デバイスの製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019131884A1 (ja) * | 2017-12-28 | 2019-07-04 | 宇部興産株式会社 | フレキシブルデバイス基板形成用ポリイミド前駆体樹脂組成物 |
JPWO2019131884A1 (ja) * | 2017-12-28 | 2021-01-14 | 宇部興産株式会社 | フレキシブルデバイス基板形成用ポリイミド前駆体樹脂組成物 |
JP6992820B2 (ja) | 2017-12-28 | 2022-01-13 | 宇部興産株式会社 | フレキシブルデバイス基板形成用ポリイミド前駆体樹脂組成物 |
WO2020226062A1 (ja) * | 2019-05-09 | 2020-11-12 | 三菱瓦斯化学株式会社 | 積層体 |
CN111613580A (zh) * | 2020-05-21 | 2020-09-01 | 深圳市华星光电半导体显示技术有限公司 | 柔性基板的制备方法及柔性基板 |
CN111613580B (zh) * | 2020-05-21 | 2023-04-18 | 深圳市华星光电半导体显示技术有限公司 | 柔性基板的制备方法及柔性基板 |
Also Published As
Publication number | Publication date |
---|---|
JP6571094B2 (ja) | 2019-09-04 |
JP6725948B2 (ja) | 2020-07-22 |
JPWO2016043180A1 (ja) | 2017-07-06 |
KR20170056543A (ko) | 2017-05-23 |
TWI673167B (zh) | 2019-10-01 |
JP2020006691A (ja) | 2020-01-16 |
TW201618943A (zh) | 2016-06-01 |
CN107073883A (zh) | 2017-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6725948B2 (ja) | 積層体およびフレキシブルデバイスの製造方法 | |
JP6363077B2 (ja) | 積層体およびその処理法ならびにフレキシブルデバイスの製造方法 | |
JP6407362B2 (ja) | 表示装置の製造方法 | |
JP6447135B2 (ja) | 積層体、積層体の製造方法、およびフレキシブル電子デバイスの製造方法 | |
JP7013875B2 (ja) | 積層体、積層体の製造方法、フレキシブル電子デバイスの製造方法 | |
JP6185283B2 (ja) | フレキシブルデバイス用積層体 | |
JP6210201B2 (ja) | フレキシブル電子デバイスの製造方法 | |
JP6332616B2 (ja) | 高分子前駆体フィルム層/無機基板積層体、およびその製造方法、高分子フィルム層/無機基板積層体の製造方法、およびフレキシブル電子デバイスの製造方法 | |
JP6965978B2 (ja) | ポリイミドフィルムと無機基板の積層体 | |
JP6688450B2 (ja) | 積層体、電子デバイス、及びフレキシブル電子デバイスの製造方法 | |
JP2020059169A (ja) | 積層体、及び、積層体の製造方法 | |
JP6950713B2 (ja) | 高分子フィルム積層基板およびフレキシブル電子デバイスの製造方法 | |
JP7205687B2 (ja) | 積層体、積層体の製造方法、及び、金属含有層付き耐熱高分子フィルム | |
JP6718736B2 (ja) | 耐熱性有機高分子層の剥離方法およびフレキシブル配線板の製造方法 | |
JP2019099697A (ja) | ガラス基板への塗工用溶液 | |
WO2021261314A1 (ja) | 電子表示装置およびその製造方法 | |
CN106170178B (zh) | 耐热性有机高分子层的剥离方法及柔性布线板的制造方法 | |
JP6350163B2 (ja) | ガラス積層体 | |
WO2022113415A1 (ja) | 積層体 | |
JP7452135B2 (ja) | ポリイミドフィルム積層体の製造方法 | |
JP2015174379A (ja) | 積層体 | |
JP7095283B2 (ja) | 剥離層形成剤および、フレキシブル電子デバイスの製造方法 | |
JP2021091753A (ja) | ポリイミド基板の製造方法 | |
JP2017061388A (ja) | ガラス樹脂複合体の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15841479 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2016548892 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20177006725 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 15841479 Country of ref document: EP Kind code of ref document: A1 |