TW201933689A - 用於真空及腐蝕性應用的具有陶瓷絕緣體的終端饋通單元 - Google Patents
用於真空及腐蝕性應用的具有陶瓷絕緣體的終端饋通單元 Download PDFInfo
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- TW201933689A TW201933689A TW107137588A TW107137588A TW201933689A TW 201933689 A TW201933689 A TW 201933689A TW 107137588 A TW107137588 A TW 107137588A TW 107137588 A TW107137588 A TW 107137588A TW 201933689 A TW201933689 A TW 201933689A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 104
- 239000012212 insulator Substances 0.000 title abstract description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 93
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 92
- 239000004020 conductor Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 30
- 238000005219 brazing Methods 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims 17
- 230000005611 electricity Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 19
- 230000004888 barrier function Effects 0.000 abstract description 2
- 238000003754 machining Methods 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 28
- 239000007789 gas Substances 0.000 description 14
- 229910052759 nickel Inorganic materials 0.000 description 14
- 229910045601 alloy Inorganic materials 0.000 description 13
- 239000000956 alloy Substances 0.000 description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 238000005304 joining Methods 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 238000003466 welding Methods 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- PCEXQRKSUSSDFT-UHFFFAOYSA-N [Mn].[Mo] Chemical compound [Mn].[Mo] PCEXQRKSUSSDFT-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 235000010893 Bischofia javanica Nutrition 0.000 description 2
- 240000005220 Bischofia javanica Species 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 150000002835 noble gases Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000005667 attractant Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 230000031902 chemoattractant activity Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
- B23K35/286—Al as the principal constituent
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B1/00—Layered products having a non-planar shape
- B32B1/08—Tubular products
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/28—Manufacture of leading-in conductors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02G—INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES
- H02G3/00—Installations of electric cables or lines or protective tubing therefor in or on buildings, equivalent structures or vehicles
- H02G3/22—Installations of cables or lines through walls, floors or ceilings, e.g. into buildings
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
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- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
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- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/60—Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface
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- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
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- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/84—Joining of a first substrate with a second substrate at least partially inside the first substrate, where the bonding area is at the inside of the first substrate, e.g. one tube inside another tube
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J5/00—Details relating to vessels or to leading-in conductors common to two or more basic types of discharge tubes or lamps
- H01J5/32—Seals for leading-in conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/46—Bases; Cases
- H01R13/52—Dustproof, splashproof, drip-proof, waterproof, or flameproof cases
- H01R13/5202—Sealing means between parts of housing or between housing part and a wall, e.g. sealing rings
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- H01R9/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, e.g. terminal strips or terminal blocks; Terminals or binding posts mounted upon a base or in a case; Bases therefor
- H01R9/16—Fastening of connecting parts to base or case; Insulating connecting parts from base or case
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- H01R9/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, e.g. terminal strips or terminal blocks; Terminals or binding posts mounted upon a base or in a case; Bases therefor
- H01R9/22—Bases, e.g. strip, block, panel
- H01R9/223—Insulating enclosures for terminals
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Abstract
一種電終端單元或饋通,其可以用於將電導體接線穿過腔室壁或另外跨越隔絕氣體條件之間的阻障。電終端單元可以具有鋁作為對腔室介面的介面材料,並且可以利用陶瓷絕緣體。電終端單元可以具有使用作為介面的鋁而直接硬焊至絕緣體的陶瓷表面。形成腔室介面的鋁可以在以氣密接合而將鋁硬焊至中空陶瓷管的同一過程步驟中形成在陶瓷管內。將鋁硬焊至陶瓷絕緣體之後的車削則可以允許達成所要的最終形式。一種製造此種電終端單元的方法。
Description
本發明有關電饋通,更特定而言有關用於腐蝕性應用(例如真空腔室)的電饋通。
電饋通通常用來在真空腔室內的裝置和定位在真空腔室外的設備之間傳輸電力和訊號。舉例而言,真空腔室中的某些裝置(例如熱蒸鍍源或基板加熱器)需要來自真空腔室之外部的電力。附帶而言,真空腔室中的某些裝置(例如溫度感應器或測量裝置)必須發送訊號到真空腔室外的設備以供分析。
用於這些環境的電饋通一般而言是安裝在真空腔室壁上的氣密通路。一或多個導體可以設於電饋通中。每個導體由絕緣體所包圍以保持與腔室壁絕緣。絕緣體可以是玻璃或陶瓷材料。
某些電饋通具有玻璃對金屬密封,其具有用於標準連接器的針腳接觸。某些其他做法使用陶瓷金屬硬焊針腳,其安裝在金屬凸緣上。許多電饋通使用柯華合金(Kovar)以嘗試匹配陶瓷絕緣體之金屬的熱膨脹係數。柯華合金關於焊接則有明確的缺點,包括可能必須使用昂貴的電子束焊接。
於其他應用,需要金屬導管(其可以是鋁)以氣密接合於陶瓷結構(例如插塞)。金屬管允許接合包覆的項目(例如電力或遙測導線)而使之氣密包覆地接合於金屬管,而同時將導線接線經過穿過陶瓷的氣密密封通道。
所需要的電饋通是使用熱膨脹良好匹配於陶瓷絕緣體的材料並且能夠不昂貴地製造。
一種電終端單元或饋通,其可以用於將電導體接線穿過腔室壁或另外跨越隔絕氣體條件之間的阻障。電終端單元或饋通可以具有鋁作為介面材料並且可以利用陶瓷絕緣體。電終端單元或饋通所具有的鋁可以直接硬焊至絕緣體的陶瓷表面。鋁可以在以氣密接合而將鋁硬焊至陶瓷管的同一過程步驟中形成在中空陶瓷管內。將鋁硬焊至陶瓷絕緣體之後的車削則可以允許達成所要的最終形式。提供了製造此種電終端或饋通單元的方法。
圖1是先前技術之電饋通100的示例性範例。經由穿過容器壁的饋通來讓電訊號通過是常見的需求。以基本需求來說,此種饋通具有承受必要的操作壓力、環境和溫度的能力,而同時使所需的電訊號與容器壁電隔絕。真空系統所用的饋通典型而言須以1大氣壓(ATM)的壓力差、每分鐘小於1´10-9
標準立方公分的氦(He)洩漏速率、攝氏幾百度的溫度來操作,而同時通過可以包括電力、射頻、儀器測量和其他的訊號。其他類型的應用(例如化學處理、油和氣體應用和其他)可以需要不同的操作規格,例如較高的壓力、溫度和化學相容性。
電饋通100可以具有第一末端101,其調適成以纜線連接器106而耦合於電纜。連接器針腳103可以駐留在第一末端101內。第二末端102可以包括可由絕緣體105所分開的電導體104。
圖2和3是先前技術之電饋通的象徵性截面圖,其包括柯華合金外殼。陶瓷件203 (舉例而言為氧化鋁)乃用於將硬焊到陶瓷內的複數個電導體202加以電絕緣。導體202可以是導體針腳,其舉例而言由鎳或銅所製成。陶瓷絕緣體203的外緣硬焊到柯華合金表列或外殼204 (柯華合金乃用於匹配陶瓷的熱膨脹),柯華合金然後焊接到另一金屬201 (例如不鏽鋼纜線外殼201,其使用作為對容器的連接),以及焊接到金屬205 (例如對攜載電訊號之纜線的不鏽鋼真空容器連接器205)。每個金屬201和205都可以是不鏽鋼合金,例如303、304或316。
圖2和3所示之電饋通的設計和製造有幾個缺點。這些缺失關於使用柯華合金作為氧化鋁陶瓷絕緣體的外殼。柯華合金乃用於匹配陶瓷的熱膨脹係數(CTE)。在製造期間,氧化鋁絕緣體硬焊至柯華合金。硬焊典型而言在氧化鋁上使用鉬錳層206而以銅銀硬焊合金來做,這在超過800℃的溫度下進行。如果使用非柯華合金的外殼,則低CTE的氧化鋁和高CTE的金屬之不匹配所造成的應力將導致陶瓷龜裂。柯華合金也具有某些不合意的特徵。它欠缺使它為用於纜線或容器之良好連接器的機械性質。它無法被輕易焊接(將它焊接到具有良好連接器所需性質的不鏽鋼),而需要在幾個地方207使用電子束焊接,這既貴且慢。而且柯華合金本身是昂貴而供應有所受限。
相對於上述設計,根據本發明的電饋通和電終端單元允許金屬直接硬焊到陶瓷,而不使用柯華合金並且不使用其他材料作為潤溼劑(例如鉬錳)。於某些方面,陶瓷絕緣體形成中空部分,其允許將鋁插入中空部分內。鋁可以用粉末、箔或其他形式來插入。鋁然後以氣密硬焊接合而硬焊至陶瓷絕緣體之中空部分的內部表面。於某些方面,陶瓷可以是非可擴散的類型,例如氮化鋁、氧化鋁、氧化鈹或氧化鋯。
於某些方面,用於加熱器元件的電終端需要氣密嵌埋於陶瓷插塞中的金屬管。加熱器元件導線可加以包覆以保護導線抵抗可以出現在處理室中的腐蝕性製程化學品,或為了其他原因而加以包覆。氣密嵌埋於陶瓷插塞中的鋁管則允許加熱器元件導線的包覆氣密接合於鋁管,因此持續保護陶瓷插塞內的包覆元件。陶瓷也提供包覆與裡面的導體電隔絕。
於某些實施例,接合過程是在調適成提供極低壓力的處理室中進行。根據本發明實施例的接合過程可以要求沒有氧以便達成氣密密封接合。於某些實施例,過程是在低於1´10-4
托耳的壓力下進行。於某些實施例,過程是在低於1´10-5
托耳的壓力下進行。於某些實施例,將鋯或鈦放置在處理室中而達到進一步的氧移除。舉例而言,鋯內腔室可以放置在要接合的料件周圍。
於某些實施例,可以使用非真空的氣體以達成氣密密封。於某些實施例,可以使用氬(Ar)氣體以達成氣密接合。於某些實施例,使用其他的高貴氣以達成氣密接合。於某些實施例,可以使用氫(H2
)氣體以達成氣密接合。
硬焊層的溼潤和流動以及氣密接合或密封的生成可以對各式各樣的因素很敏感。考量的因素包括:硬焊材料組成、陶瓷組成、陶瓷被鋁擴散的敏感度、處理室中之氣體的化學組成(特別是腔室在接合過程期間的氧程度)、溫度、在該溫度的時間、硬焊材料的厚度、所要接合之材料的表面特徵、所要接合之料件的幾何形狀、接合過程期間跨越接合所施加的物理壓力、和/或接合過程期間所維持的接合間隙。依據本發明之實施例的氣密接合是He洩漏速率為每分鐘小於1´10-9
標準立方公分的接合。
將鋁接合到中空陶瓷絕緣體之內部表面的硬焊方法範例可以包括以下步驟:以硬焊材料來填充配置在第一和第二陶瓷物之間的絕緣體,該硬焊材料選自鋁和鋁合金所構成的群組;將硬焊層加熱到至少800℃的溫度;以及將硬焊層冷卻到低於其熔點的溫度,如此則硬焊層硬化並且生成氣密密封,而將第一構件接合於第二構件。將鋁接合到中空陶瓷絕緣體的內部表面之硬焊方法的另一範例(其中陶瓷是由氮化鋁、氧化鋁、氧化鈹、氧化鋯構成的群組所製成)可以包括以下步驟:以硬焊材料來填充配置在第一和第二陶瓷物之間的絕緣體,該硬焊材料選自鋁和鋁合金所構成的群組;將硬焊層加熱到至少770℃的溫度;以及將硬焊層冷卻到低於其熔點的溫度,如此則硬焊層硬化並且生成氣密密封,而將第一構件接合於第二構件。於某些方面,硬焊溫度可以在770℃到1200℃的範圍。硬焊接合的多樣幾何形狀可以根據在此所述的方法來實施。
根據本發明之某些實施例的接合過程可以包括以下某些或所有的步驟。陶瓷是選擇用於硬焊的料件。陶瓷件具有空腔,其可以是通入陶瓷的圓柱形孔。於某些方面,圓柱形孔是在陶瓷的軸向中央。陶瓷件可以由氧化鋁所製成。陶瓷件可以是單晶或多晶的氮化鋁。陶瓷件可以選自以下所構成的群組:氮化鋁、多晶氧化鋁、單晶氧化鋁或藍寶石、氧化鈹、氧化鋯,其是示範不被鋁所擴散的群組。其他的陶瓷可以在這群組中。於示例性範例,如圖4所見,陶瓷管302之中空中央的內部表面303將填充以硬焊材料301。接合材料可以是包括鋁的硬焊材料。於某些實施例,硬焊材料可以是市售可得之大於99%鋁含量的鋁箔。於某些實施例,硬焊材料可以是大於98重量%的鋁。於某些實施例,鋁可以是大於99.99重量%的鋁。於某些實施例,硬焊材料可以由複數層的箔所構成。
爐可以抽真空到小於5´10-5
托耳的壓力。於某些方面,真空移除殘餘的氧。於某些實施例,使用低於1´10-5
托耳的真空。於某些實施例,前總成放置在作為氧吸引劑的鋯內腔室內,而進一步減少處理期間可能已發現朝向接合的殘餘氧。於某些實施例,處理爐被清洩並且重新填充脫水高貴氣體(例如氬氣)以移除氧。於某些實施例,製程爐被清洩並且重新填充純化的氫以移除氧。
前總成然後接受溫度增加,並且維持在接合溫度。在開始加熱循環之時,溫度可以緩慢上升,舉例而言每分鐘15℃到200℃,然後每分鐘20~30℃,而上升到標準化溫度(舉例而言600℃)和接合溫度,並且在每個溫度維持固定的停留時間以允許在加熱之後恢復真空而使梯度減到最小以及/或是為了其他原因而這樣做。當已經抵達硬焊溫度時,溫度可以維持一段時間以進行硬焊反應。於範例性實施例,停留溫度可以是850℃並且停留時間可以是30分鐘。於另一範例性實施例,停留溫度可以是800℃並且停留時間可以是2小時。於另一範例性實施例,停留溫度可以是1000℃並且停留時間可以是15分鐘。於另一範例性實施例,停留溫度可以是1150℃並且停留時間可以是30~45分鐘。於某些實施例,停留溫度不超過最高1200℃。於某些實施例,停留溫度不超過最高1300℃。於某些實施例,停留溫度可以在770℃到1200℃的範圍。於某些實施例,停留溫度可以在800℃到1200℃的範圍。在達到足夠的硬焊停留時間之時,爐子可以在每分鐘20℃的速率來冷卻到室溫,或者當固有的爐子冷卻速率較少時以更低的速率來冷卻。爐子可以帶到大氣壓力、打開、可以移除硬焊總成以供檢視、找出特徵和/或評估。
於某些方面,裝置的冷卻甚至在總成周圍使用了導熱套筒。於示例性範例,陶瓷件的外徑可以是1.00英吋。陶瓷件可以指向成使得中空空腔朝上。陶瓷件可以由氧化鋁所製成。氮化鋁套筒可以在硬焊期間放置在陶瓷件周圍,而有助於在硬焊和冷卻期間維持陶瓷件之更均勻的溫度,而鋁則在其空腔內。於示例性範例,AlN套筒可以具有1.38英吋的內徑,並且可以稍高於氧化鋁陶瓷件。
如上所述而接合的總成導致在陶瓷孔特徵中的鋁和陶瓷孔的內部表面之間有氣密密封。此種總成然後能夠使用在氣體隔絕如同電隔絕一般是該總成用途上一重要方面的地方。進一步而言,當接合總成舉例而言稍後用於半導體處理時,接合可以暴露於多樣氣體的部分將不在此種氣體中劣化,也不將汙染之後的半導體處理。
於本發明的某些實施例,如圖4~8所見,硬焊總成300代表在製造用於加熱器元件之完成電終端的過渡步驟。雖然這範例性實施例饋通一根鋁管,但是其他實施例可以饋通更多根管。
於某些實施例,陶瓷管302可以具有阻擋部分307,其把將填充鋁的中空中央301與第二中空部分305分開。也可以在硬焊總成300的這末端看到較窄的外表面304。
於某些實施例,看到蓋子306是在硬焊總成的較窄外表面304周圍。蓋子306可以是鎳蓋。於某些實施例,鎳蓋硬焊至硬焊總成之氧化鋁陶瓷的較窄外表面。於某些實施例,鎳蓋可以在將鋁接合於陶瓷件之主要中空內表面的相同過程步驟期間硬焊到氧化鋁上。鎳蓋可以在近似1100℃做銅硬焊,這是在也可以硬焊鋁的溫度。於某些實施例,首先硬焊鎳蓋,而鋁是在較低溫度的第二硬焊步驟中硬焊。於示例性範例,鎳蓋可以使用銅硬焊而硬焊至預先以鉬錳層而金屬化的陶瓷。這第一硬焊步驟可以發生在1083℃。單元然後可以將鋁放入陶瓷件的中空內部,並且在850℃的溫度下硬焊。
在一或多個硬焊過程之後,硬焊總成300可以單獨移動而變成硬焊後總成400。可以移除陶瓷管的部分404 (圖8以虛線顯示)以暴露已硬焊到陶瓷管內之鋁的外表面401。可以移除鋁301的中央部分以形成鋁管403。可以移除阻擋部分307以允許有從鋁管403內到鎳蓋306的連續通路402。
圖10和11以截面來示範範例性單一導體電終端500,其是在插入可以焊接502於鎳蓋306的導體501之後。導體501舉例而言可以用外部包覆而氣密包覆以保護導體。該包覆然後可以氣密接合於鋁管的內或外表面401。以鋁管氣密接合於陶瓷件的內或外表面303來說,導體501的氣密保護(其存在於包覆的導體總成中)乃帶入陶瓷件內;並且以導體在鎳蓋306的氣密接合來說,導體已經被氣密密封。於某些方面,電終端500的外部陶瓷表面可以另外密封成使得電終端單元的鋁管側與電終端單元的鎳蓋側隔絕。
圖11示範電終端500,其所具有的包覆506以氣密接合505而接合於鋁管。包覆506可以是鋁,並且接合可以是焊接。鋁以氣密接合504而硬焊至陶瓷。在電終端的末端,鎳蓋306以氣密接合503而接合於陶瓷。鎳蓋306對導體501的焊接502也是氣密的。一系列的氣密接合使包覆和陶瓷插塞內的氣體508與氣體507和509隔絕。進一步而言,陶瓷使鋁管與導體501和鎳蓋306電隔絕。
圖12~16示範用於製造電饋通600的製造步驟。圖12以陶瓷件602來示範過渡步驟,該陶瓷件的形狀可以是圓柱形。陶瓷件602在第一區段可以有較大的直徑,並且可以頸縮到較小直徑的區段604。陶瓷件602可以具有孔,其可以是圓柱形孔,其中已經根據如上所述的過程步驟而硬焊了鋁部分601。於某些實施例,陶瓷是氧化鋁。於某些實施例,陶瓷是氮化鋁。於某些實施例,陶瓷是如上所述的非擴散性陶瓷。於某些實施例,鋁是大於98重量%的鋁。於某些實施例,鋁是大於99重量%的鋁。於某些實施例,鋁是大於99.9重量%的鋁。在這階段,如圖12所見,鋁部分601已經硬焊至陶瓷件602之孔的內部,並且現在以氣密接合而接合於陶瓷。
圖13示範根據本發明某些實施例來製造饋通600的進一步步驟。在這階段,已經移除鋁部分601的中央以生成鋁管603,如圖13的截面所見。鋁的移除可以藉由機械車削技術或其他合宜的方法而移除。鋁管603的外表面則氣密接合於陶瓷件602的內表面。
圖14示範根據本發明某些實施例來製造饋通600的進一步步驟。在這階段,陶瓷件602的一區段已經移除退到點610,其暴露鋁管603的外表面605。在這階段,現在則有從陶瓷件延伸的鋁管,其中鋁管的外表面以氣密接合而接合於陶瓷件的內表面。
圖15示範根據本發明某些實施例來製造饋通600的進一步步驟。在這階段,凸緣606已經接合於鋁管603。於某些實施例,凸緣606可以用鋁管603之外周旁的焊接607而接合於鋁管。舉例而言,凸緣606可以調適成安裝到處理室上的介面饋通附接點。這架構現在具有耦合於鋁管的饋通凸緣氣密,而鋁管氣密接合於陶瓷件。陶瓷件電隔絕了可以從凸緣和從腔室壁接線穿過陶瓷插塞的項目。
圖16示範根據本發明某些實施例來製造饋通600的進一步步驟。在這階段,已經生成穿過陶瓷件602的通道608,其可以允許導體或其他項目通過陶瓷件602。於某些方面,可以有多於一個的通道608。於某些方面,一或多個通道可以在製程的較早階段生成。於某些方面,例如利用通道之導體的項目可以在製造的較早階段期間添附於陶瓷插塞。
如從以上敘述所明白,可以從在此所給的敘述建構出各式各樣的實施例,並且熟於此技術者將輕易想到額外的優點和修改。因此,本發明就其較廣方面來說不限於所示和所述之特定的細節和示例性範例。據此,可以做出此種細節上的偏離,而不偏離申請人之概括發明的精神或範圍。
100‧‧‧電饋通
101‧‧‧第一末端
102‧‧‧第二末端
103‧‧‧連接器針腳
104‧‧‧電導體
105‧‧‧絕緣體
106‧‧‧纜線連接器
201‧‧‧金屬
202‧‧‧電導體
203‧‧‧陶瓷件
204‧‧‧外殼
205‧‧‧金屬
206‧‧‧鉬錳層
207‧‧‧電子束焊接處
300‧‧‧硬焊總成
301‧‧‧硬焊材料
302‧‧‧陶瓷管
303‧‧‧內部表面
304‧‧‧外表面
305‧‧‧第二中空部分
306‧‧‧蓋子
307‧‧‧阻擋部分
400‧‧‧硬焊後總成
401‧‧‧外表面
402‧‧‧連續通道
403‧‧‧鋁管
404‧‧‧移除部分
500‧‧‧單一導體電終端
501‧‧‧導體
502‧‧‧焊接
503‧‧‧氣密接合
504‧‧‧氣密接合
505‧‧‧氣密接合
506‧‧‧包覆
507‧‧‧氣體
508‧‧‧氣體
509‧‧‧氣體
600‧‧‧電饋通
601‧‧‧鋁部分
602‧‧‧陶瓷件
603‧‧‧鋁管
604‧‧‧較小直徑的區段
605‧‧‧外表面
606‧‧‧凸緣
607‧‧‧焊接
608‧‧‧通道
610‧‧‧點
圖1是先前技術之電饋通的立體圖。
圖2是先前技術之電饋通的截面圖。
圖3是先前技術之電饋通的截面圖。
圖4是本發明實施例之硬焊總成的立體圖。
圖5是圖4硬焊總成的端視圖。
圖6是圖4硬焊總成沿著圖5之線6-6的截面圖。
圖7是本發明實施例之硬焊後總成的端視圖。
圖8是圖7硬焊後總成沿著圖7之線8-8的截面圖。
圖9是圖7硬焊後總成的立體圖。
圖10是本發明實施例之電終端饋通的截面圖。
圖11是本發明實施例之電終端饋通的截面圖。
圖12是本發明實施例的饋通之第一製造步驟的截面圖。
圖13是本發明實施例的饋通之第二製造步驟的截面圖。
圖14是本發明實施例的饋通之第三製造步驟的截面圖。
圖15是本發明實施例的饋通之第四製造步驟的截面圖。
圖16是本發明實施例的饋通之第五製造步驟的截面圖。
Claims (17)
- 一種用於真空腔室的電饋通,包含陶瓷本體,其具有第一末端和第二末端,第一孔延伸穿過該第一末端且形成該陶瓷本體的內表面,中空的鋁結構具有第一部分延伸進入該第一孔且被硬焊至該內表面以在該中空的鋁結構及該陶瓷本體之間形成氣密密封,該中空的鋁結構具有第二部分從該陶瓷本體延伸,及電導體具有第一末端部分延伸穿過該中空的鋁結構及第二末端部分延伸至該陶瓷本體的該第二末端。
- 如申請專利範圍第1項的用於真空腔室的電饋通,進一步包括金屬的末端蓋,其結合至該陶瓷本體的該第二末端,該電導體的該第二末端部分被結合至該末端蓋。
- 如申請專利範圍第1項的用於真空腔室的電饋通,其中該陶瓷本體的該第二末端設置穿過此延伸且與該第一孔連通的第二孔,該電導體的該第二末端部分於該第二孔內被結合至該陶瓷本體的該第二末端。
- 如申請專利範圍第1至3項中任一項的用於真空腔室的電饋通,其中該中空的鋁結構係鋁管。
- 如申請專利範圍第1至3項中任一項的用於真空腔室的電饋通,其中該陶瓷本體係環狀且設有中央縱向軸線,且該第一孔係於該中央縱向軸線上軸向置中。
- 如申請專利範圍第1至3項中任一項的用於真空腔室的電饋通,其中該中空的鋁結構的鋁包括選自以下所構成之群組的鋁:大於89重量%的鋁、大於92重量%的鋁、大於重量98%的鋁、大於99重量%的鋁、大於99.5重量%的鋁、大於99.99重量%的鋁。
- 如申請專利範圍第1或2項的用於真空腔室的電饋通,其中該電饋通係電終端單元。
- 如申請專利範圍第1或3項的用於具有腔室壁的真空腔室的電饋通,其中該中空的鋁結構的該第二部分被結合至建構為氣密耦接至該腔室壁的凸緣。
- 一種製作絕緣電饋通或電終端單元的方法,包含提供陶瓷件,其具有第一末端、第二末端及從該第一末端延伸進入該陶瓷件而從內表面所形成的孔,把鋁放入該孔內,於該孔內硬焊該鋁以在該孔內生成鋁結構,其被氣密接合於該孔的該內表面且具有中央部分,移除該鋁結構的該中央部分以生成穿過該鋁結構的通道,以及在該第一末端移除在該鋁結構周圍的部分該陶瓷件,以暴露部分之該鋁結構的外表面,藉此所導致的中空的鋁結構被氣密接合於該陶瓷件的該內表面且從該陶瓷件的該第一末端延伸。
- 如申請專利範圍第9項的方法,其進一步包含提供至少一延伸穿過該中空的鋁結構的電導體。
- 如申請專利範圍第10項的方法,其中該至少一電導體與該中空的鋁結構電隔絕。
- 如申請專利範圍第10項的方法,其中該陶瓷件是環狀,而該方法進一步包含將末端蓋硬焊至該環狀的陶瓷件的該第二末端且將該至少一電導體的末端結合至該末端蓋。
- 如申請專利範圍第9項的方法,其中該鋁結構係鋁桿。
- 如申請專利範圍第13項的方法,其中該中空的鋁結構係鋁管。
- 如申請專利範圍第9至14項中任一項的方法,其中該硬焊步驟包含在選自770℃或更高、800℃或更高、770℃到1200℃的溫度範圍所構成之群組的溫度下硬焊該鋁。
- 如申請專利範圍第9至14項中任一項的方法,其中該硬焊步驟包含在選自1´10-4 托耳或更低和5´10-5 托耳或更低所構成之群組的壓力下硬焊該鋁。
- 如申請專利範圍第9至14項中任一項的方法,其中該鋁包含選自以下所構成之群組的鋁:大於89重量%的鋁、大於92重量%的鋁、大於重量98%的鋁、大於99重量%的鋁、大於99.5重量%的鋁、大於99.99重量%的鋁。
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- 2018-10-24 WO PCT/US2018/057414 patent/WO2019084210A1/en active Search and Examination
- 2018-10-24 EP EP18870123.9A patent/EP3701547B1/en active Active
- 2018-10-24 CN CN201880069326.6A patent/CN111373487A/zh active Pending
- 2018-10-24 TW TW107137588A patent/TWI791057B/zh active
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- 2021-06-08 US US17/342,212 patent/US11993547B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20190194078A1 (en) | 2019-06-27 |
WO2019084210A1 (en) | 2019-05-02 |
CN111373487A (zh) | 2020-07-03 |
US11028021B2 (en) | 2021-06-08 |
TWI791057B (zh) | 2023-02-01 |
EP3701547B1 (en) | 2023-04-19 |
KR20200079272A (ko) | 2020-07-02 |
JP7428640B2 (ja) | 2024-02-06 |
WO2019084210A9 (en) | 2019-10-17 |
US11993547B2 (en) | 2024-05-28 |
JP2021500709A (ja) | 2021-01-07 |
US20210292246A1 (en) | 2021-09-23 |
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EP3701547A1 (en) | 2020-09-02 |
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