TW201925289A - 聚四氟乙烯片以及晶粒封裝方法 - Google Patents
聚四氟乙烯片以及晶粒封裝方法 Download PDFInfo
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- TW201925289A TW201925289A TW107142709A TW107142709A TW201925289A TW 201925289 A TW201925289 A TW 201925289A TW 107142709 A TW107142709 A TW 107142709A TW 107142709 A TW107142709 A TW 107142709A TW 201925289 A TW201925289 A TW 201925289A
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- 229920001343 polytetrafluoroethylene Polymers 0.000 title claims abstract description 51
- 239000004810 polytetrafluoroethylene Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000000853 adhesive Substances 0.000 claims abstract description 39
- 230000001070 adhesive effect Effects 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 238000001179 sorption measurement Methods 0.000 claims abstract description 18
- 238000004804 winding Methods 0.000 claims abstract description 16
- 239000000835 fiber Substances 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 56
- 239000000463 material Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 44
- 238000004806 packaging method and process Methods 0.000 claims description 15
- -1 polytetrafluoroethylene Polymers 0.000 claims description 13
- 238000009987 spinning Methods 0.000 claims description 5
- 239000000779 smoke Substances 0.000 claims description 3
- 239000004809 Teflon Substances 0.000 claims 1
- 229920006362 Teflon® Polymers 0.000 claims 1
- 230000008595 infiltration Effects 0.000 claims 1
- 238000001764 infiltration Methods 0.000 claims 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 239000002121 nanofiber Substances 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 17
- 238000003384 imaging method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000005995 Aluminium silicate Substances 0.000 description 1
- 241000309551 Arthraxon hispidus Species 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001523 electrospinning Methods 0.000 description 1
- 239000003546 flue gas Substances 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F6/00—Monocomponent artificial filaments or the like of synthetic polymers; Manufacture thereof
- D01F6/02—Monocomponent artificial filaments or the like of synthetic polymers; Manufacture thereof from homopolymers obtained by reactions only involving carbon-to-carbon unsaturated bonds
- D01F6/08—Monocomponent artificial filaments or the like of synthetic polymers; Manufacture thereof from homopolymers obtained by reactions only involving carbon-to-carbon unsaturated bonds from polymers of halogenated hydrocarbons
- D01F6/12—Monocomponent artificial filaments or the like of synthetic polymers; Manufacture thereof from homopolymers obtained by reactions only involving carbon-to-carbon unsaturated bonds from polymers of halogenated hydrocarbons from polymers of fluorinated hydrocarbons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H—ELECTRICITY
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13022—Disposition the bump connector being at least partially embedded in the surface
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Abstract
本發明是一種對直徑為1 μm以下的PTFE纖維進行紡織而成的PTFE片(44),PTFE片中,哥雷值為1~3的範圍,加熱至300℃時的與片纏繞方向正交的方向上的收縮率為10%以下,當將晶粒(100)封裝至被封裝體(110)時夾於對晶粒(100)進行加熱的工具(22)與所述晶粒(100)之間而可藉由工具(22)來吸附晶粒(100),並且抑制將晶粒(100)固定於被封裝體(110)上的黏接構件(114)附著在工具(22)的吸附面(24)或晶粒(100)上。由此,提供一種可實現真空吸附的穩定化及維護性的改善的PTFE片及晶粒封裝方法。
Description
本發明是有關於一種使用於晶粒封裝之防翹曲用的聚四氟乙烯(Polytetrafluoroethylene,PTFE)片及晶粒封裝方法。
已知有藉由真空吸附來拾取藉由切割而單片化的多個晶粒(die)的技術(參照專利文獻1~專利文獻3)。例如,在專利文獻2中,已揭示對在端子上設置有凸塊的裸晶片(bare chip),在與包含所述端子及凸塊的裸晶片的電路功能面為相反的面側進行真空吸附。真空吸附於工具上的裸晶片是在使電路功能面與基板相向的方向上,搭載在塗佈有黏接劑的基板上。在專利文獻2的發明中,為了防止藉由真空吸附或工具的加壓等而使基板上的黏接劑自裸晶片的側面向上方翹曲,採用使片介於工具的吸附面與裸晶片之間的結構,藉此,抑制黏接劑的翹曲,防止黏接劑附著在工具上。此外,在專利文獻3中,記載有一種經由具有透氣性的多孔膠帶(tape)而吸附半導體晶片的技術。
[現有技術文獻]
[專利文獻]
[現有技術文獻]
[專利文獻]
專利文獻1:日本專利特開2006-66625號公報
專利文獻2:日本專利第5669137號公報
專利文獻3:日本專利特開平3-201458號公報
專利文獻2:日本專利第5669137號公報
專利文獻3:日本專利特開平3-201458號公報
[發明所欲解決之課題]
此處,專利文獻2的發明是以在電路功能面上真空吸附裸晶片為前提,對於在形成有凸塊電極的凸塊形成面側進行真空吸附則未作任何考量。由此,在凸塊形成面上,藉由凸塊電極而設置有凹凸,故當使工具真空吸附晶粒時,可能因凸塊電極的突起高度而在工具吸附面與晶粒之間產生空隙。因此,當真空吸附有晶粒時,藉由產生空氣的洩漏,真空度下降,而存在工具的吸附性變差的情況。
此處,專利文獻2的發明是以在電路功能面上真空吸附裸晶片為前提,對於在形成有凸塊電極的凸塊形成面側進行真空吸附則未作任何考量。由此,在凸塊形成面上,藉由凸塊電極而設置有凹凸,故當使工具真空吸附晶粒時,可能因凸塊電極的突起高度而在工具吸附面與晶粒之間產生空隙。因此,當真空吸附有晶粒時,藉由產生空氣的洩漏,真空度下降,而存在工具的吸附性變差的情況。
又,當將晶粒經由黏接材料而封裝至基板時,有時會自黏接材料產生煙氣(fume gas),所述煙氣自因凸塊電極的突起高度而產生的空隙流入,使工具等受到污染。因此,必須頻繁地清洗工具等,存在維護性變差的情況。
此外,在專利文獻3中,記載有一種使用海綿、紙、合成橡膠等作為多孔膠帶的材料,但是該些材料由於不耐熱而會產生收縮、熔融、變形,故不適合於藉由工具來將晶粒加熱至250℃以上而封裝至基板的製程(process)。
本發明是鑒於如上所述的情況而完成的,目的在於提供一種能夠實現真空吸附的穩定化及維護性的改善的防翹曲用的片。
[解決課題之手段]
[解決課題之手段]
[1]一種PTFE片,對直徑為1 μm以下的PTFE纖維進行紡織而成,PTFE片中,哥雷(Gurley)值為1~3的範圍,加熱至300℃時的與片纏繞方向正交的方向上的收縮率為10%以下,當將晶粒封裝至被封裝體時夾於進行晶粒加熱的工具與所述晶粒之間而可藉由工具來吸附晶粒,並且抑制將晶粒固定於被封裝體上的黏接構件附著在所述工具的吸附面或所述晶粒上。
[2]如[1]所述的PTFE片,其中PTFE片具有晶粒的凸塊形成面上的凸塊電極的突起高度以上的厚度,可吸附晶粒的凸塊形成面。
[3]如[1]所述的PTFE片,其中PTFE片包含較凸塊電極或吸附面更柔軟的材質。
[4]如[1]至[4]中任一項所述的PTFE片,其中工具是藉由利用真空吸附工具對晶粒及黏接材料進行加熱,而將晶粒封裝至基板的接合區域,PTFE片成為過濾器,抑制對晶粒或黏接材料進行加熱時所產生的煙氣滲入至真空吸附工具的抽吸孔。
[5]一種晶粒封裝方法,包括如下的步驟:準備具有形成有多個凸塊電極的凸塊形成面的晶粒;對直徑為1 μm以下的PTFE纖維進行紡織,準備哥雷值為1~3的範圍,且加熱至300℃時的與片纏繞方向正交的方向上的收縮率為10%以下的PTFE片;將具有吸附面的真空吸附工具,在吸附面與凸塊形成面相向的方向上,配置於晶粒的上方;將PTFE片夾於吸附面與凸塊形成面之間,藉由真空吸附工具而吸附晶粒;以及將藉由真空吸附工具而吸附的晶粒,經由黏接材料而封裝至基板的接合區域;且PTFE片具有凸塊形成面上的凸塊電極的突起高度以上的厚度。
[發明的效果]
[發明的效果]
根據本發明,可實現真空吸附的穩定化及維護性的改善。
以下,對本發明的實施形態進行說明。在以下的圖式的記載中,對相同或相似的構成元件用相同或相似的符號表示。圖式為例示,各部的尺寸或形狀為示意性者,不應將本申請發明的技術範圍限定於所述實施形態來解釋。再者,在本說明書中,關於數值範圍,記載為「A~B」的情況,是表示「A以上、B以下」。
[實施形態]
圖1是表示本發明的實施形態的晶粒封裝方法中所使用的接合裝置10的概略的圖。接合裝置10是用以將晶粒100封裝至基板110的接合區域的晶粒接合裝置。
圖1是表示本發明的實施形態的晶粒封裝方法中所使用的接合裝置10的概略的圖。接合裝置10是用以將晶粒100封裝至基板110的接合區域的晶粒接合裝置。
晶粒100包含半導體材料。晶粒100是形成為包含作為主面的表面及背面的長方體狀。具體而言,晶粒100包括形成有規定的電路圖案的表面即第1面102a、以及與第1面102a相反的背面即第2面102b。在本實施形態中,是在晶粒100的第2面102b與基板110相向的方向上,將晶粒100封裝至基板110。如上所述的方向上的封裝形態通常被稱為晶粒接合。再者,晶粒100的第1面102a的詳細情況將在後文描述。
接合裝置10包括晶圓台(wafer stage)12、中間台14、接合台(bonding stage)16、接合頭(bonding head)18、經由Z軸驅動機構20而安裝至接合頭18的真空吸附工具22、獲取晶粒100的圖像資訊的拍攝部26、拍攝部27、使接合頭18沿XY軸方向移動的XY平台28、以及對該些各種結構的動作進行控制的控制部30。
在以下的說明中,將XY軸方向設為與晶粒100的主面(或任一個台的主面)平行的方向,將Z軸方向設為與XY軸方向上的面垂直的方向來進行說明。再者,X軸方向及Y軸方向彼此正交。
在晶圓台12上,載置包含經單片化的多個晶粒100的晶圓120。晶圓120包含形成有規定的電路圖案的表面即第1面122a(相當於晶粒100的第1面102a)、以及與第1面122a相反的背面即第2面122b(相當於晶粒100的第2面102b)。晶圓120亦可藉由將第2面122b黏附在晶圓台12上的薄膜上,而固定於晶圓台12上。晶圓台12上的晶粒100藉由與真空吸附工具22及拾取單元(未圖示)的合作動作而拾取晶粒100之後,利用移送頭(未圖示),而移送至中間台14。
中間台14是用以暫時載置晶粒100的台。中間台配置在晶圓台12與接合台16之間。晶粒100是在第2面102b與中間台14相向的方向上配置於中間台14上。中間台14是由線性馬達(未圖示)等驅動機構,以可沿XY軸方向移動的方式構成。晶粒100亦可藉由將第2面102b黏附於中間台14上的薄膜,而固定於中間台14上。中間台14上的晶粒100藉由與真空吸附工具22及拾取單元(未圖示)的合作動作而拾取晶粒100之後,利用移送頭(未圖示),而移送至接合台16。
在接合台16上,配置有基板110。基板110亦可藉由例如黏附於接合台16上的薄膜,而固定於接合台16上。基板110具有至少一個接合區域,在接合區域上封裝任一個晶粒100。例如當基板110具有多個接合區域時,將晶粒100封裝至各接合區域之後,在每個接合區域內將基板110設為單片,可獲得多個完成品(半導體裝置)。
又,亦可在基板110上的各接合區域內,藉由積層而封裝多個晶粒100。在如上所述的堆疊型半導體裝置中,積層於相同接合區域內的兩個以上的晶粒100均亦可以第1面102a朝向與基板110相反的方向的方式而封裝。或者,亦可對積層於相同接合區域內的一部分晶粒,在與其他晶粒不同的方向上進行封裝。
基板110的材質例如亦可包含有機材料(例如環氧基板或聚醯亞胺基板)、無機材料(例如玻璃基板)或該些的複合材料(例如玻璃環氧基板)。基板110亦可為所謂的內插器。又,基板110亦可包含金屬材料(例如引線框架材料)。
再者,接合台16是藉由導軌(未圖示)等驅動機構,以可使基板110沿X軸方向移動的方式構成。又,接合台16包括用以對基板110進行加熱的加熱部件。
在接合頭18上,經由Z軸驅動機構20而安裝有真空吸附工具22,且在與真空吸附工具22相距規定距離的位置上安裝有拍攝部26。換言之,在圖1所示的例中,真空吸附工具22及拍攝部26是固定於接合頭18上,接合頭18藉由XY平台28而移動,藉此真空吸附工具22及拍攝部26一併沿XY軸方向移動。又,亦可在與拍攝部26相反之側,設置有拍攝部27。亦可為拍攝部26能夠拍攝晶粒100的第1面102a,拍攝部27能夠拍攝晶粒100的第2面102b。再者,拍攝部26亦可不固定於接合頭18,且亦可與真空吸附工具22分開而移動。
真空吸附工具22具有真空吸附晶粒100的吸附面24。真空吸附工具22是用以為了將晶粒100移送至規定位置而吸附保持,並且是為了將晶粒100封裝至基板110而進行加壓的工具。再者,真空吸附工具22的詳細情況將在後文描述。
控制部30是對為了接合裝置10的接合所必需的處理進行控制的構件。控制部30進行包含真空吸附工具22的XYZ軸驅動、θ軸驅動(圍繞著Z軸的旋轉)及傾斜驅動(傾斜方向)的真空吸附工具22的位置控制、抽真空的導通或斷開控制、將晶粒100封裝至基板110時的載荷控制、基板110的加熱控制等。控制部30是以在接合頭18、真空吸附工具22及拍攝部26等各結構之間可進行訊號的收發的方式而連接,由此對該些構件的動作進行控制。
在控制部30上,連接著用以輸入控制資訊的操作部32、以及用以輸出控制資訊的顯示部34。由此,操作者可一面藉由顯示部34而識別畫面,一面藉由操作部32而輸入必需的控制資訊。
控制部30是包含中央處理單元(central processing unit,CPU)及記憶體等的電腦裝置,在記憶體中預先存儲著用以進行接合所需的處理的接合程式等。控制部30是以可執行後述本實施形態的晶粒封裝方法的相關各步驟的方式構成(例如包括用以使電腦執行各動作的程式)。
其次,一面參照圖2~圖5,一面對本實施形態的晶粒封裝方法進行說明。本實施形態的晶粒封裝方法可利用圖1所示的接合裝置10來進行。
此處,圖2是用以說明本實施形態的晶粒封裝方法的流程圖。圖3是表示將工具配置於晶粒的上方的步驟的圖,圖4是表示將吸附於工具上的晶粒經由黏接材料而封裝至基板的步驟的圖。又,圖5是表示工具的吸附面與晶粒的凸塊形成面的大小的關係的俯視圖。
首先,在晶圓台12上,準備經單片化的多個晶粒100(S10)。具體而言,如圖1所示,在晶圓台12上,準備包含黏附於薄膜上的多個晶粒100的晶圓120。晶圓120是在多個晶粒100的各個的第1面102a朝向上方並且第2面102b與晶圓台12相向的方向上,配置在晶圓台12上。
其次,將晶粒100移送至中間台14(S11)。具體而言,將晶圓台12上的多個晶粒100一個一個地移送至中間台14。如以上說明,晶粒100的移送亦可藉由真空吸附工具22而進行。
其次,在中間台14的晶粒100的上方,配置真空吸附工具22(S12)。此處,對真空吸附工具22及晶粒100的詳細情況進行進一步說明。
真空吸附工具22包含與晶粒100的第1面102a相向的吸附面24。又,在吸附面24上,設置有用以抽真空的至少一個抽吸孔25。抽吸孔25亦可設置於吸附面24上的XY俯視觀察時的中央。
晶粒100如圖3所示,藉由將第2面102b黏附於中間台14上的薄膜(圖略),而固定於中間台14上。在晶粒100的第1面102a上,設置有多個電極墊(pad)104、設置於多個電極墊104上的多個凸塊電極106、及設置於多個凸塊電極106的周圍的保護膜108。電極墊104是與形成於第1面102a上的電路圖案電性連接的端子。又,在電極墊104的外周端部,被保護膜108覆蓋著,藉此露出的電極墊104的中央部成為與凸塊電極106的連接部。
如圖4所示,凸塊電極106具有較第1面102a上的保護膜108的上表面更突起的高度H。凸塊電極106的高度H是凸塊電極106的頂點與保護膜108的上表面之間的距離。
電極墊104及凸塊電極106的材質並無限定,但例如電極墊104亦可為鋁或銅等,且凸塊電極106亦可為金等。
在圖3所示的例中,在如上所述的晶粒100的第1面102a與真空吸附工具22的吸附面24之間配置有多孔片44。例如,藉由在中間台14的上方配置安裝有多孔片44的一對軌道40、軌道42,而可在晶粒100與真空吸附工具22之間配置多孔片44。一對軌道40、軌道42包含供給軌道40及纏繞軌道42。藉由將自供給軌道40供給的多孔片44的一部分搬運至纏繞軌道42,可將多孔片44的一部分區域依次運送至晶粒100的第1面102a與真空吸附工具22的吸附面24之間。
在圖3所示的例中,多孔片44在軌道40、軌道42排列的X軸方向上具有纏繞方向,在Y軸方向上具有寬度方向,以及在Z軸方向上具有厚度方向。多孔片44包括與真空吸附工具22的吸附面24相向的第1面44a、以及與晶粒100的第1面102a相向的第2面44b,第1面44a與第2面44b之間的距離是多孔片44的厚度。如圖3所示,多孔片44具有厚度T1。厚度T1與凸塊電極106的高度H具有T1≧H的關係。此時,多孔片44的厚度T1較佳為凸塊電極106的高度H的1倍~5倍,但可使用不阻礙來自加熱器的熱傳導的範圍的厚度的多孔片44。
多孔片44的寬度方向上的長度大於晶粒100的第1面102a的Y軸方向上的寬度,且大於真空吸附工具22的Y軸方向上的寬度。由此,可使多孔片44確實地介於晶粒100的第1面102a與真空吸附工具22的吸附面24之間。
多孔片44具有用以使第1面44a與第2面44b之間通氣的多個孔。關於多孔片44的哥雷值,為了吸附晶片,值越小越好,較佳為例如具有1~3(s/100 cc/in2
)的範圍。
多孔片44為了在將晶粒100封裝至基板110時至少部分地吸收第1面102a的凸塊電極106的突起高度,包含較凸塊電極106及吸附面24中的任一者更柔軟的材質。例如,多孔片44的壓縮應力為0.12 MPa,小於用於凸塊電極的銅的壓縮應力110 GPa、金的壓縮應力80 GPa。因此,多孔片44較銅或金等作為凸塊電極而使用的金屬更易於變形。再者,多孔片44的壓縮應力是藉由規定的載荷而按壓多孔片44,根據載荷與應變量的梯度而算出。
多孔片44是對PTFE奈米纖維進行紡織而成的紡織片。所述多孔片44亦可使用具有約1 μm~2 μm的孔徑,具有約50 μm的厚度,且具有哥雷值為1~2(s/100 cc/in2
)的片。PTFE奈米纖維儘管厚,卻可減小哥雷值(提高通氣性)。又,利用PTFE奈米纖維的多孔片44即使加熱至260℃~300℃,亦可減小熱收縮,且可抑制片捲曲等片的變形。
多孔片44在與纏繞方向(X方向)正交的寬度方向(Y方向)上在250℃時具有0%的收縮率,在300℃時具有0%~0.5%的收縮率,在350℃時具有5%~9%的收縮率,在纏繞方向上在250℃時具有4.2%~5.7%的收縮率,在300℃時具有4.7%~0.5%的收縮率,在350℃時具有12.4%~14.0%的收縮率。與此相對,將PTFE在低溫下加以延伸之後,施加熔點以下的熱而使形狀固定化的延伸片在寬度方向上在250℃時具有29.9%~31.9%的收縮率,在300℃時具有35.0%~38.0%的收縮率,在350℃時具有48.7%~53.3%的收縮率,在片纏繞方向上在250℃時具有30%~42%的收縮率,在300℃時具有36%~47%的收縮率,在350℃時具有50%~55%的收縮率。即,多孔片44與延伸片相比,在寬度方向上具有大約1/5的收縮率,在片纏繞方向上具有大約1/4的收縮率。
再者,如本實施形態般纏繞於輥上的多孔片44在纏繞方向上為長度,故而即使在所述方向上產生有收縮,亦不會對後述抑制黏接材料的翹曲的效果造成影響。
在本實施形態中所說明的半導體裝置的製造製程中,藉由內置於真空吸附工具22內的加熱器而將晶粒100及黏接材料114加熱至250℃~300℃為止。此時,加熱器及真空吸附工具22是加熱至高於對晶粒100進行加熱的目標溫度的300℃~350℃程度為止,多孔片44亦是曝露於300℃~350℃的熱中。
多孔片44如圖4所示,是用以抑制在基板110上封裝晶粒100時,液體的黏接材料114或藉由熱而熔融的薄膜狀的黏接材料114翹曲而附著在真空吸附工具22的吸附面24或晶粒100的上表面。當黏接材料114附著於晶粒100時,會引起電極的接合不良等。此外,當黏接材料11附著於吸附面24時,會將附著於此的黏接材料114轉印至晶粒100而同樣地引起不良。
晶粒100並不限於積層在基板110上,亦有時積層在已封裝於基板110上的其他晶粒100上。此時,多孔片44抑制將基板110上的黏接材料114或晶粒100彼此加以黏接的黏接材料114附著在吸附面45或晶粒100上。
欲藉由多孔片44來抑制黏接材料114附著於吸附面24及晶粒100,必須覆蓋整個吸附面24及晶粒100。但是,當在多孔片44中為了施加300℃左右的熱而使用收縮率大的材料時,吸附面24或晶粒100的一部分露出而可預測黏接材料114附著於該些表面。
又,當在多孔片44中使用產生捲曲等變形的材料時,在多孔片44與吸附面24接觸時、封裝晶粒100時等,多孔片44會捲縮而使吸附面24或晶粒100的一部分露出,從而可預測黏接材料114附著於該些表面。此外,亦考慮到藉由黏接材料114所附著的多孔片44產生變形,而使黏接材料114附著於出乎意料的部位而引起晶粒100的不良。
返回至圖2的流程圖,其次,將多孔片44夾於真空吸附工具22的吸附面24與晶粒100的第1面102a(凸塊形成面)之間,藉由真空吸附工具22而吸附晶粒100(S13)。具體而言,在圖3中,使真空吸附工具22下降,在將多孔片44夾於所述吸附面24與晶粒100的第1面102a之間的狀態下,自真空吸附工具22的抽吸孔25進行抽真空。如此一來,可越過多孔片44而將晶粒100吸附於真空吸附工具22的吸附面24。其後,使真空吸附工具22與多孔片44一併移送至接合台16。如此一來,使晶粒100移送至基板110的接合區域上。
其次,將晶粒100經由黏接材料114而封裝至基板110的接合區域(S14)。具體而言,藉由預先在基板110的接合區域上設置黏接材料114,使真空吸附工具22下降,而如圖4所示,利用真空吸附工具22越過多孔片44對晶粒100的第1面102a進行加壓。此時對晶粒100及黏接材料114進行加熱。由此,使黏接材料114加熱熔融,然後使其硬化。如此一來,如圖4所示,在吸附面24與第1面102a之間夾有多孔片44的狀態下,將晶粒100經由黏接材料114而封裝至基板110的接合區域。
黏接材料114亦可使用在常溫下構成為片狀的材料,或者,亦可使用在常溫下構成為漿糊狀的材料。黏接材料114亦可為例如熱硬化性樹脂。此時,藉由對黏接材料114進行加熱,可使其熔融及硬化。
加壓時的多孔片44的厚度T2(T2≦T1)較佳為相對於凸塊電極106的突起高度H,具有T2≧H的關係。
由此,當將晶粒100封裝至基板110的接合區域時,可在真空吸附工具22的吸附面24與晶粒100的第1面102a之間的空隙內設置多孔片44。由此,可防止空氣自空隙洩漏,因此可維持來自抽吸孔25的抽吸所形成的晶粒100的吸附力。此外,由於可遮擋通過空隙的空氣,故可均勻地進行加熱。
又,藉由在所述空隙內設置多孔片44,可抑制對晶粒100或黏接材料114進行加熱時所產生的煙氣附著於真空吸附工具22的吸附面24,或滲入至抽吸孔25。因此,可抑制真空吸附工具22的吸附面24或抽吸孔25等受到污染,可使維護性提高。
此處,如圖5所示,真空吸附工具22的吸附面24亦可具有大於晶粒100的第1面102a的尺寸。具體而言,真空吸附工具22的X軸方向上的寬度WX及Y軸方向上的寬度WY、以及晶粒100的X軸方向上的寬度DX及Y軸方向上的寬度DY亦可為WX≧DX且WY≧DY。
由此,可藉由吸附面24而確實地對晶粒100進行加壓,並且可使對晶粒100的第1面102a的加壓力均勻化。此外,在本實施形態中,由於多孔片44介於吸附面24與第1面102a之間,故當將晶粒100經由黏接材料114封裝至基板110上時,可在晶粒100的側面利用多孔片44遮擋翹曲的黏接材料114。因此,可防止黏接材料114附著於真空吸附工具22的吸附面24。
又,如圖4所示,當真空吸附工具22的X軸方向上的寬度WX之中,設為真空吸附工具22的抽吸孔25的寬度W1及其兩端的寬度W2時,亦可為W1<W2。又,所謂真空吸附工具22的寬度W2及加壓時的多孔片44的厚度T2亦可為T2>W2(或T1>W2)。
由此,自真空吸附工具22的端部至抽吸孔25為止的距離小於多孔片44的厚度,因此即使將多孔片44設為凸塊電極106的突起高度H以上,亦可防止真空吸附工具22的抽吸力受損。
本發明並不限定於所述實施形態,可進行各種變形而應用。例如,亦可在所述結構中省略中間台14,將自晶圓台12藉由真空吸附工具22而在夾著多孔片44的狀態下拾取的晶粒100搬運至接合台16。
又,在所述實施形態中,是使用安裝於一對軌道40、軌道42上的多孔片44,但亦可預先準備多塊單片狀的片作為多孔片44,且使所述單片狀的片介於真空吸附工具22的吸附面24與晶粒100的第1面102a之間。
[實施例]
其次,對本發明的實施例進行說明。圖6(a)及圖6(b)是表示加熱前的片的外觀的照片,圖6(a)表示實施例,圖6(b)表示比較例的各個片。圖7(a)及圖7(b)是表示加熱至250℃之後的試料的外觀的照片,圖7(a)表示實施例,圖7(b)表示比較例的各個片。表1表示對本發明的實施例的PTFE奈米纖維片、比較例的PTFE延伸片的各個的收縮率進行測定的結果。
其次,對本發明的實施例進行說明。圖6(a)及圖6(b)是表示加熱前的片的外觀的照片,圖6(a)表示實施例,圖6(b)表示比較例的各個片。圖7(a)及圖7(b)是表示加熱至250℃之後的試料的外觀的照片,圖7(a)表示實施例,圖7(b)表示比較例的各個片。表1表示對本發明的實施例的PTFE奈米纖維片、比較例的PTFE延伸片的各個的收縮率進行測定的結果。
本實施例中所使用的PTFE奈米纖維片是藉由靜電紡絲(electrospinning)法而將經纖維化的PTFE材料成形為片狀之後,對其進行加熱而獲得PTFE奈米纖維片。
(測定方法)
對實施例的PTFE奈米纖維片、比較例的PTFE延伸片,在250℃、300℃、350℃的各溫度下分別測定兩個片的收縮率。各片的收縮率如圖6(a)及圖6(b)所示,在鋪滿高嶺土(乾燥陶土)的金屬墊上配置各片,利用電爐在250℃、300℃、350℃,10分鐘的條件下對各片進行加熱。
對實施例的PTFE奈米纖維片、比較例的PTFE延伸片,在250℃、300℃、350℃的各溫度下分別測定兩個片的收縮率。各片的收縮率如圖6(a)及圖6(b)所示,在鋪滿高嶺土(乾燥陶土)的金屬墊上配置各片,利用電爐在250℃、300℃、350℃,10分鐘的條件下對各片進行加熱。
加熱後,藉由測量經冷卻的各片的尺寸變化而算出各個片的收縮率。實施例的片的尺寸變化是將片切出120 mm見方,在100 mm的寬幅上賦予四個測定點,在加熱前及加熱冷卻後測定片的測定點的間隔,根據其差分而算出。再者,在表1中,距離A、距離C是沿片的寬度方向測量,距離B、距離D是沿片的纏繞方向測量。又,比較例的延伸片由於無法進行測定點間的距離測定,故而基於加熱前後的外形尺寸的差分算出收縮率。
(測定結果)
測定各溫度下的實施例、比較例的收縮率的結果為,獲得表1所示的結果。即,可知實施例的奈米纖維片中,寬度方向上的收縮率相較於比較例的延伸片的寬度方向上的收縮率,在250℃、300℃、350℃的各溫度下,大幅小至大約1/5~1/10。又,在實施例中,關於纏繞方向上的收縮率,也相較於比較例的收縮率,在250℃、300℃、350℃的各溫度下,大幅小至大約1/3~1/4。此外,如圖6(a)及圖6(b)、圖7(a)及圖7(b)所示,關於片的外觀,亦可知比較例的延伸片較實施例的奈米纖維片大幅收縮。
測定各溫度下的實施例、比較例的收縮率的結果為,獲得表1所示的結果。即,可知實施例的奈米纖維片中,寬度方向上的收縮率相較於比較例的延伸片的寬度方向上的收縮率,在250℃、300℃、350℃的各溫度下,大幅小至大約1/5~1/10。又,在實施例中,關於纏繞方向上的收縮率,也相較於比較例的收縮率,在250℃、300℃、350℃的各溫度下,大幅小至大約1/3~1/4。此外,如圖6(a)及圖6(b)、圖7(a)及圖7(b)所示,關於片的外觀,亦可知比較例的延伸片較實施例的奈米纖維片大幅收縮。
比較例的延伸片中,由於在製造時在低溫下使PTFE材料延伸之後進行加熱而製成,因此會產生由延伸引起的壓縮方向上的殘留應力。因此,延伸片若在對晶粒進行封裝時進行再加熱,則壓縮方向上的殘留應力會釋放,故而大幅收縮。
與此相對,實施例的奈米纖維片是對纖維直徑低於1 μm的PTFE纖維進行紡織而製成,因此可不使片延伸而特別減小寬度方向上的殘留應力。再者,奈米纖維片雖呈10%左右的收縮率,但其是在製造時將奈米纖維片加熱至PTFE的熔點以上時產生,可認為是來源於PTFE的樹脂特性。
此外,將實施例、比較例的片分別夾於晶粒與吸附工具之間,測定在吸附工具吸附晶粒之前及之後發生變化的真空壓力的差壓。真空壓力是藉由配置於吸附工具的吸附孔的下游側的未圖示的壓力計來測量。測量的結果為,差壓在使用實施例的奈米纖維片的情況下為7.0 kPa,在使用比較例的延伸片的情況下為4.2 kPa。
再者,關於測量真空壓力的差壓時所使用的各片的厚度,實施例為56 μm,比較例為25 μm。即,實施例的奈米纖維片中,儘管較比較例的延伸片厚約2倍,但差壓大。即,實施例的奈米纖維片由於壓力損耗小於比較例的延伸片,故可有效且確實地吸附晶粒100的凸塊形成面。又,實施例的奈米纖維片由於壓力損耗小,故即使應用更厚的奈米纖維片,亦可吸附晶粒100的凸塊形成面。
由於以上所述,故實施例的奈米纖維片與廣泛使用的延伸PTFE片相比收縮率大幅降低。如實施形態所述,當為了抑制黏接材料的因翹曲而引起的附著而使用該些片時,必須考慮收縮率而配置充分大小的片及搬運所述片的機器,從而浪費裝置的空間。此外,若欲抑制片的收縮,則需要對片進行壓制的夾持器(clamper)等機構,又,會產生使加熱器的溫度降低等製程的變更等麻煩。藉由使用實施例的奈米纖維片,可不變更裝置的佈局、晶粒封裝製程,而有效抑制黏接材料的附著。
[表1]
通過所述發明的實施形態而說明的實施方式可根據用途而適當組合,或者加以變更或改良而使用,本發明並不限定於所述實施形態的記載。自申請專利範圍的記載可知,此種組合或者加以變更或改良的形態亦可包含於本發明的技術範圍內。
10‧‧‧接合裝置
12‧‧‧晶圓台
14‧‧‧中間台
16‧‧‧接合台
18‧‧‧接合頭
20‧‧‧Z軸驅動機構
22‧‧‧真空吸附工具
24‧‧‧吸附面
25‧‧‧抽吸孔
26、27‧‧‧拍攝部
28‧‧‧XY平台
30‧‧‧控制部
32‧‧‧操作部
34‧‧‧顯示部
40‧‧‧軌道/供給軌道
42‧‧‧軌道/纏繞軌道
44‧‧‧多孔片/PTFE片
44a、102a、122a‧‧‧第1面
44b、102b、122b‧‧‧第2面
100‧‧‧晶粒
104‧‧‧電極墊
106‧‧‧凸塊電極
108‧‧‧保護膜
110‧‧‧基板/被封裝體
114‧‧‧黏接材料/黏接構件
120‧‧‧晶圓
DX、DY、WX、WY、W1、W2‧‧‧寬度
H‧‧‧突起高度
S10~S14‧‧‧步驟
T1、T2‧‧‧厚度
圖1是表示本發明的實施形態的晶粒封裝方法中所使用的接合裝置的圖。
圖2是表示本發明的實施形態的晶粒封裝方法的流程圖的圖。
圖3是用以說明本發明的實施形態的晶粒封裝方法的圖,具體而言,是表示將工具配置在晶粒的上方的步驟的圖。
圖4是用以說明本發明的實施形態的晶粒封裝方法的圖,具體而言,是表示將吸附於工具上的晶粒經由黏接材料而封裝於基板上的步驟的圖。
圖5是用以說明本發明的實施形態的晶粒封裝方法的圖,具體而言,是表示工具的吸附面與晶粒的凸塊形成面的大小的關係的俯視圖。
圖6(a)及圖6(b)是表示加熱前的片的外觀的照片,圖6(a)表示實施例,圖6(b)表示比較例的各個片。
圖7(a)及圖7(b)是表示加熱至250℃之後的試料的外觀的照片,圖7(a)表示實施例,圖7(b)表示比較例的各個片。
Claims (5)
- 一種聚四氟乙烯片,對直徑為1 μm以下的聚四氟乙烯纖維進行紡織而成, 所述聚四氟乙烯片中,哥雷值為1~3 s/100 cc/in2 的範圍,加熱至300℃時的與片纏繞方向正交的方向上的收縮率為10%以下, 當將晶粒封裝至被封裝體時夾於對所述晶粒進行加熱的工具與所述晶粒之間而能夠藉由所述工具來吸附所述晶粒,並且抑制將所述晶粒固定於所述被封裝體上的黏接構件附著在所述工具的吸附面或所述晶粒上。
- 如申請專利範圍第1項所述的聚四氟乙烯片,其中 所述聚四氟乙烯片具有所述晶粒的凸塊形成面上的凸塊電極的突起高度以上的厚度,能夠吸附所述晶粒的凸塊形成面。
- 如申請專利範圍第2項所述的聚四氟乙烯片,其中所述聚四氟乙烯片包含較所述凸塊電極或所述吸附面更柔軟的材質。
- 如申請專利範圍第1項至第3項中任一項所述的聚四氟乙烯片,其中 所述工具藉由對所述晶粒及所述黏接構件進行加熱,而將所述晶粒封裝至所述被封裝體的接合區域, 所述聚四氟乙烯片成為過濾器,抑制對所述晶粒或黏接材料進行加熱時所產生的煙氣滲入至所述工具的抽吸孔。
- 一種晶粒封裝方法,包括如下的步驟: 準備具有形成有多個凸塊電極的凸塊形成面的晶粒; 對直徑為1 μm以下的聚四氟乙烯纖維進行紡織,準備哥雷值為1~3 s/100 cc/in2 的範圍,且加熱至300℃時的與片纏繞方向正交的方向上的收縮率為10%以下的聚四氟乙烯片; 將具有吸附面的真空吸附工具,沿所述吸附面與所述凸塊形成面相向的方向,配置於所述晶粒的上方; 在所述吸附面與所述凸塊形成面之間夾著聚四氟乙烯片,藉由所述真空吸附工具而吸附所述晶粒;以及 將藉由所述真空吸附工具而吸附的所述晶粒,經由黏接材料而封裝至基板的接合區域;且 所述聚四氟乙烯片具有所述凸塊形成面上的所述凸塊電極的突起高度以上的厚度。
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