TW201917811A - 發光二極體質量傳遞設備及製造方法 - Google Patents

發光二極體質量傳遞設備及製造方法 Download PDF

Info

Publication number
TW201917811A
TW201917811A TW107121749A TW107121749A TW201917811A TW 201917811 A TW201917811 A TW 201917811A TW 107121749 A TW107121749 A TW 107121749A TW 107121749 A TW107121749 A TW 107121749A TW 201917811 A TW201917811 A TW 201917811A
Authority
TW
Taiwan
Prior art keywords
substrate
led
light emitting
light
source
Prior art date
Application number
TW107121749A
Other languages
English (en)
Chinese (zh)
Inventor
法蘭柯斯Ｊ （喬瑟夫） 亨利
Original Assignee
美商特索羅科學有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商特索羅科學有限公司 filed Critical 美商特索羅科學有限公司
Publication of TW201917811A publication Critical patent/TW201917811A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0611—Sorting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Wire Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
TW107121749A 2017-06-26 2018-06-25 發光二極體質量傳遞設備及製造方法 TW201917811A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762525105P 2017-06-26 2017-06-26
US62/525,105 2017-06-26

Publications (1)

Publication Number Publication Date
TW201917811A true TW201917811A (zh) 2019-05-01

Family

ID=64693505

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107121749A TW201917811A (zh) 2017-06-26 2018-06-25 發光二極體質量傳遞設備及製造方法

Country Status (7)

Country Link
US (1) US10978429B2 (https=)
EP (1) EP3646384A4 (https=)
JP (1) JP2020526030A (https=)
KR (1) KR20200013068A (https=)
CN (1) CN111052386A (https=)
TW (1) TW201917811A (https=)
WO (1) WO2019005818A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI798610B (zh) * 2019-12-16 2023-04-11 日商Ｔｏｗａ股份有限公司 統計資料產生方法、切斷裝置及系統
TWI825887B (zh) * 2021-11-26 2023-12-11 群創光電股份有限公司 電子裝置的製造方法

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10720098B2 (en) * 2017-11-15 2020-07-21 Facebook Technologies, Llc Pulse-width-modulation control of micro LED
JP6650547B1 (ja) * 2018-12-28 2020-02-19 信越エンジニアリング株式会社 検査装置及び検査方法
US11430830B2 (en) * 2019-04-05 2022-08-30 Nanosys, Inc. White light emitting diode (LED) and method of repairing light emitting device using same
US11246251B2 (en) 2019-05-02 2022-02-08 Seagate Technology Llc Micro-component transfer systems, methods, and devices
US10923378B2 (en) 2019-05-13 2021-02-16 Seagate Technology Llc Micro-component batch transfer systems, methods, and devices
EP3985744B1 (en) 2019-06-13 2025-05-21 BOE Technology Group Co., Ltd. Mass transfer method for light-emitting diodes
DE102019118270B4 (de) * 2019-07-05 2021-10-07 X-Fab Semiconductor Foundries Gmbh Verfahren zur Herstellung von Halbleiterbauelementen zur Ausbeutesteigerung beim Mikrotransferdruck
KR20210019323A (ko) * 2019-08-12 2021-02-22 삼성전자주식회사 마이크로 엘이디 디스플레이 및 이의 제작 방법
WO2021065918A1 (ja) * 2019-10-01 2021-04-08 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
TWI733226B (zh) * 2019-10-25 2021-07-11 台灣愛司帝科技股份有限公司 發光二極體晶圓以及發光二極體晶圓檢測裝置與方法
KR102297791B1 (ko) * 2019-11-13 2021-09-03 한국광기술원 레이저를 이용하여 전사 대상물을 분리하고 전사하는 장치 및 방법
KR102163570B1 (ko) * 2019-11-21 2020-10-12 엔엠시스코(주) u-LED Panel to Panel 전사 방식을 이용한 u-LED 글라스 Panel의 LED 소자 공백 확인 및 이를 보충하기 위한 LED 소자 수리 공정
CN111341766B (zh) * 2020-02-27 2023-12-22 惠州中京电子科技有限公司 一种mini LED主板制作方法
KR102856136B1 (ko) * 2020-03-10 2025-09-08 루미레즈 엘엘씨 증대된 led 어레이 조립체를 제조하는 방법
JP2022115687A (ja) * 2021-01-28 2022-08-09 東レエンジニアリング株式会社 転写装置
JP7463153B2 (ja) * 2020-03-23 2024-04-08 東レエンジニアリング株式会社 実装方法および実装装置
CN115335974A (zh) * 2020-03-23 2022-11-11 东丽工程株式会社 安装方法、安装装置以及转印装置
CN112992665B (zh) * 2020-05-22 2022-02-25 重庆康佳光电技术研究院有限公司 巨量转移装置、系统及其控制方法
TWI752595B (zh) * 2020-08-18 2022-01-11 東捷科技股份有限公司 自發光畫素裝置
CN112768572B (zh) * 2021-01-07 2022-10-11 武汉理工大学 基于高速扫描激光转印的微型led巨量转移方法及装置
TWI807544B (zh) * 2021-12-17 2023-07-01 友達光電股份有限公司 顯示面板及其製造方法
WO2023182625A1 (ko) * 2022-03-22 2023-09-28 엘지전자 주식회사 불량 검사용 기판, 반도체 발광 소자 및 디스플레이 장치
DE102022204077A1 (de) * 2022-04-27 2023-11-02 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zum Ermitteln einer Abpickreihenfolge für eine Halbleiter-Bestückungseinrichtung
DE102022114646A1 (de) * 2022-06-10 2023-12-21 Trumpf Laser Gmbh Verfahren und Vorrichtung zum Verarbeiten mindestens eines Teilbereichs eines Schichtsystems
EP4507477A4 (en) * 2022-12-15 2025-09-03 Boe Technology Group Co Ltd BILLBOARD AND DISPLAY APPARATUS
CN118841358B (zh) * 2024-06-28 2025-11-21 天马新型显示技术研究院(厦门)有限公司 发光元件转移板，修补方法和显示面板

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4860296A (en) * 1983-12-30 1989-08-22 American Telephone And Telegraph Company, At&T Bell Laboratories Laser controlled by a multiple-layer heterostructure
US5634267A (en) * 1991-06-04 1997-06-03 Micron Technology, Inc. Method and apparatus for manufacturing known good semiconductor die
JP2819369B2 (ja) * 1992-11-30 1998-10-30 京セラ株式会社 画像ヘッドの組立方法
JP2002314053A (ja) * 2001-04-19 2002-10-25 Sony Corp チップ部品の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法
US6887650B2 (en) * 2001-07-24 2005-05-03 Seiko Epson Corporation Transfer method, method of manufacturing thin film devices, method of manufacturing integrated circuits, circuit board and manufacturing method thereof, electro-optical apparatus and manufacturing method thereof, ic card, and electronic appliance
US7744770B2 (en) * 2004-06-23 2010-06-29 Sony Corporation Device transfer method
US7378288B2 (en) * 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
US20060225273A1 (en) * 2005-03-29 2006-10-12 Symbol Technologies, Inc. Transferring die(s) from an intermediate surface to a substrate
JP2010050344A (ja) * 2008-08-22 2010-03-04 Fujinon Corp リワーク装置
JP2010080863A (ja) * 2008-09-29 2010-04-08 Nikon Corp 転写装置及びデバイス製造方法
US8334152B2 (en) * 2009-12-18 2012-12-18 Cooledge Lighting, Inc. Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate
JP5883250B2 (ja) * 2011-07-29 2016-03-09 リンテック株式会社 転写装置および転写方法
JP5996254B2 (ja) * 2012-04-26 2016-09-21 株式会社ディスコ リフトオフ方法
US8748202B2 (en) * 2012-09-14 2014-06-10 Bridgelux, Inc. Substrate free LED package
US9331230B2 (en) * 2012-10-30 2016-05-03 Cbrite Inc. LED die dispersal in displays and light panels with preserving neighboring relationship
JP2014186868A (ja) * 2013-03-22 2014-10-02 Toray Ind Inc 転写装置、転写方法、及びデバイス製造方法
US9871350B2 (en) * 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
US9620436B2 (en) * 2014-04-09 2017-04-11 Invensas Corporation Light emitting diode device with reconstituted LED components on substrate
US9653445B2 (en) * 2014-10-24 2017-05-16 STATS ChipPAC Pte. Ltd. Semiconductor device and method of fabricating 3D package with short cycle time and high yield
US9397001B2 (en) * 2014-12-11 2016-07-19 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing electronic device comprising a resin substrate and an electronic component
US9418895B1 (en) * 2015-03-14 2016-08-16 International Business Machines Corporation Dies for RFID devices and sensor applications
US9633883B2 (en) * 2015-03-20 2017-04-25 Rohinni, LLC Apparatus for transfer of semiconductor devices
JP2017013092A (ja) * 2015-07-01 2017-01-19 イビデン株式会社 プリント配線板の製造装置とプリント配線板の製造方法
JP6488921B2 (ja) * 2015-07-02 2019-03-27 富士通株式会社 リワーク装置及びリワーク方法
WO2017037475A1 (en) 2015-09-02 2017-03-09 Oculus Vr, Llc Assembly of semiconductor devices
CN106170849A (zh) * 2015-10-20 2016-11-30 歌尔股份有限公司 微发光二极管的转移方法、制造方法、装置和电子设备
KR101809252B1 (ko) 2017-02-24 2017-12-14 서울대학교산학협력단 반도체 적층 구조, 이를 이용한 질화물 반도체층 분리방법 및 장치

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI798610B (zh) * 2019-12-16 2023-04-11 日商Ｔｏｗａ股份有限公司 統計資料產生方法、切斷裝置及系統
TWI825887B (zh) * 2021-11-26 2023-12-11 群創光電股份有限公司 電子裝置的製造方法

Also Published As

Publication number Publication date
EP3646384A4 (en) 2021-03-24
WO2019005818A1 (en) 2019-01-03
KR20200013068A (ko) 2020-02-05
JP2020526030A (ja) 2020-08-27
US10978429B2 (en) 2021-04-13
US20180374829A1 (en) 2018-12-27
EP3646384A1 (en) 2020-05-06
CN111052386A (zh) 2020-04-21

Similar Documents

Publication Publication Date Title
US10978429B2 (en) Light emitting diode (LED) mass-transfer apparatus and method of manufacture
US11380816B2 (en) Light emitting diode (LED) mass-transfer apparatus and method of manufacture
US10985046B2 (en) Micro-LED transfer methods using light-based debonding
US12249529B2 (en) Light-emitting diode substrate and manufacturing method thereof, display device
KR100892579B1 (ko) 화상 표시 장치 및 화상 표시 장치의 제조 방법
TWI710103B (zh) 發光面板及製造此種發光面板的方法
US10236447B2 (en) Selective die repair on a light emitting device assembly
TW202006987A (zh) 使用基於光之脫膠之微型led轉移方法
US20230008806A1 (en) Laser printing of color converter devices on micro led display devices and methods
US20190157512A1 (en) Light-emitting device and display device using the same
TW201635584A (zh) 反射阻擋結構及用於整合光發射裝置之方法
US20230045160A1 (en) Method for manufacturing a display device using a semiconductor light emitting device and a self-assembly apparatus used therefor
JP4403434B2 (ja) 画像表示装置
KR20220047664A (ko) 발광 다이오드 칩 및 발광 다이오드 칩 이송 장치
JP4876356B2 (ja) 回路素子内蔵基板の製造方法、並びに電気回路装置の製造方法
US20220006010A1 (en) Method and apparatus for manufacturing flexible light emitting device
WO2013154181A1 (ja) チップオンボード型のパッケージ基板を有する発光装置の製造方法
JP2003216072A (ja) 画像表示装置及びその製造方法
JP4403422B2 (ja) 画像表示装置の製造方法
JP4055817B2 (ja) 画像表示装置
KR20230021016A (ko) 디스플레이 장치 제조용 기판 및 이를 이용한 디스플레이 장치의 제조방법
JP2003218394A (ja) 半導体発光素子及びその製造方法