JP2020526030A - 発光ダイオード（ｌｅｄ）のマストランスファー装置および製造方法 - Google Patents

発光ダイオード（ｌｅｄ）のマストランスファー装置および製造方法 Download PDF

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JP2020526030A
JP2020526030A JP2019572152A JP2019572152A JP2020526030A JP 2020526030 A JP2020526030 A JP 2020526030A JP 2019572152 A JP2019572152 A JP 2019572152A JP 2019572152 A JP2019572152 A JP 2019572152A JP 2020526030 A JP2020526030 A JP 2020526030A
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light emitting
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substrate
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devices
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ヘンリー，フランソワ・ジェイ
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テソロ・サイエンティフィック・インコーポレーテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0611—Sorting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

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  • Wire Bonding (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2019572152A 2017-06-26 2018-06-26 発光ダイオード（ｌｅｄ）のマストランスファー装置および製造方法 Pending JP2020526030A (ja)

Applications Claiming Priority (3)

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US201762525105P 2017-06-26 2017-06-26
US62/525,105 2017-06-26
PCT/US2018/039533 WO2019005818A1 (en) 2017-06-26 2018-06-26 LIGHT EMITTING DIODE (LED) MASS TRANSFER APPARATUS AND METHOD FOR MANUFACTURING THE SAME

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JP2020526030A true JP2020526030A (ja) 2020-08-27
JP2020526030A5 JP2020526030A5 (https=) 2021-07-26

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US (1) US10978429B2 (https=)
EP (1) EP3646384A4 (https=)
JP (1) JP2020526030A (https=)
KR (1) KR20200013068A (https=)
CN (1) CN111052386A (https=)
TW (1) TW201917811A (https=)
WO (1) WO2019005818A1 (https=)

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US11430830B2 (en) * 2019-04-05 2022-08-30 Nanosys, Inc. White light emitting diode (LED) and method of repairing light emitting device using same
US11246251B2 (en) 2019-05-02 2022-02-08 Seagate Technology Llc Micro-component transfer systems, methods, and devices
US10923378B2 (en) 2019-05-13 2021-02-16 Seagate Technology Llc Micro-component batch transfer systems, methods, and devices
EP3985744B1 (en) 2019-06-13 2025-05-21 BOE Technology Group Co., Ltd. Mass transfer method for light-emitting diodes
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WO2021065918A1 (ja) * 2019-10-01 2021-04-08 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
TWI733226B (zh) * 2019-10-25 2021-07-11 台灣愛司帝科技股份有限公司 發光二極體晶圓以及發光二極體晶圓檢測裝置與方法
KR102297791B1 (ko) * 2019-11-13 2021-09-03 한국광기술원 레이저를 이용하여 전사 대상물을 분리하고 전사하는 장치 및 방법
KR102163570B1 (ko) * 2019-11-21 2020-10-12 엔엠시스코(주) u-LED Panel to Panel 전사 방식을 이용한 u-LED 글라스 Panel의 LED 소자 공백 확인 및 이를 보충하기 위한 LED 소자 수리 공정
JP7377092B2 (ja) * 2019-12-16 2023-11-09 Ｔｏｗａ株式会社 統計データ生成方法、切断装置及びシステム
CN111341766B (zh) * 2020-02-27 2023-12-22 惠州中京电子科技有限公司 一种mini LED主板制作方法
KR102856136B1 (ko) * 2020-03-10 2025-09-08 루미레즈 엘엘씨 증대된 led 어레이 조립체를 제조하는 방법
JP2022115687A (ja) * 2021-01-28 2022-08-09 東レエンジニアリング株式会社 転写装置
JP7463153B2 (ja) * 2020-03-23 2024-04-08 東レエンジニアリング株式会社 実装方法および実装装置
CN115335974A (zh) * 2020-03-23 2022-11-11 东丽工程株式会社 安装方法、安装装置以及转印装置
CN112992665B (zh) * 2020-05-22 2022-02-25 重庆康佳光电技术研究院有限公司 巨量转移装置、系统及其控制方法
TWI752595B (zh) * 2020-08-18 2022-01-11 東捷科技股份有限公司 自發光畫素裝置
CN112768572B (zh) * 2021-01-07 2022-10-11 武汉理工大学 基于高速扫描激光转印的微型led巨量转移方法及装置
CN116190257A (zh) * 2021-11-26 2023-05-30 群创光电股份有限公司 电子装置的制造方法
TWI807544B (zh) * 2021-12-17 2023-07-01 友達光電股份有限公司 顯示面板及其製造方法
WO2023182625A1 (ko) * 2022-03-22 2023-09-28 엘지전자 주식회사 불량 검사용 기판, 반도체 발광 소자 및 디스플레이 장치
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JP2010080863A (ja) * 2008-09-29 2010-04-08 Nikon Corp 転写装置及びデバイス製造方法
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JP2017013092A (ja) * 2015-07-01 2017-01-19 イビデン株式会社 プリント配線板の製造装置とプリント配線板の製造方法
JP2017017230A (ja) * 2015-07-02 2017-01-19 富士通株式会社 リワーク装置及びリワーク方法

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EP3646384A4 (en) 2021-03-24
WO2019005818A1 (en) 2019-01-03
KR20200013068A (ko) 2020-02-05
US10978429B2 (en) 2021-04-13
US20180374829A1 (en) 2018-12-27
EP3646384A1 (en) 2020-05-06
CN111052386A (zh) 2020-04-21
TW201917811A (zh) 2019-05-01

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