TW201902617A - 使用具備吸附層之研磨墊的研磨方法 - Google Patents

使用具備吸附層之研磨墊的研磨方法 Download PDF

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TW201902617A
TW201902617A TW107116455A TW107116455A TW201902617A TW 201902617 A TW201902617 A TW 201902617A TW 107116455 A TW107116455 A TW 107116455A TW 107116455 A TW107116455 A TW 107116455A TW 201902617 A TW201902617 A TW 201902617A
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polishing
polishing pad
adsorption layer
surface roughness
fixed
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TWI740042B (zh
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矢島利康
二宮大輔
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日商丸石產業股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
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    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
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Abstract

本發明係關於一種研磨方法，該研磨方法適用於具備預定之吸附層的研磨墊。該研磨墊係具備包含聚矽氧等的吸附層，該聚矽氧係包含僅在兩末端具有乙烯基之直鏈狀聚有機矽氧烷。在本發明中，將研磨墊固定於固定盤後，在對前述研磨墊一邊加壓被研磨物一邊使其滑動而進行研磨時，將固定盤之表面粗度(Ra)設為0.01至0.7μm，其後，將研磨墊之吸附層吸附固定於固定盤而進行研磨作業。藉由如此之方式調整固定盤之表面粗度，可抑制在被研磨物表面產生難以預測之傷痕或粗糙。此外，固定盤表面粗度之調整方法較佳係將上述表面粗度之膜接著於固定盤之表面。

Description

使用具備吸附層之研磨墊的研磨方法
本發明係關於用以將半導體構件、電子構件等所使用之半導體晶圓等被研磨構件使用預定構成之研磨墊進行研磨之研磨方法。詳而言之，係關於在多數之被研磨構件進行研磨之步驟中，提升作業效率，並且以高水準維持研磨品質之研磨方法。
在如半導體裝置、半導體晶圓、顯示器用玻璃基板、硬碟用基板之半導體元件、半導體構件、電子構件的製造程序中，包含用以將其表面平坦化、鏡面化用之研磨步驟。在研磨步驟中，一般係將被研磨構件保持在研磨裝置之一側的固定盤，將研磨墊固定在另一側的固定盤後，一邊供給研磨漿液，一邊以被研磨構件與研磨墊經加壓之狀態下進行相對地滑動藉此來進行。
在以此研磨墊進行之研磨方法中，將研磨墊固定於固定盤之方法一搬係通過黏著膠帶等黏著劑的黏著固定。此固定方法雖然可將研磨墊強固地固定，但另一方面，在必須更換研磨墊時之作業耗費時間和精力。半導體 晶圓等之研磨步驟中，由於研磨許多的被研磨材，故無法避免研磨墊之消耗與更換。因此，以黏著進行固定係在研磨步驟之作業效率方面為較差的方法。
本案申請人係針對研磨墊之固定方式，從上述黏著所得者，開發出使用有預定之吸附層的研磨墊(專利文獻1)。此研磨墊如第3圖所示，係在研磨層之背面(固定盤側之面)設置有預定構成之吸附層者。在此之吸附層如字面上的意思，係藉由其吸附作用使研磨墊固定於固定盤者。此固定方法係與先前所使用之黏著劑般利用黏性的方法不同，從固定盤剝離時不會有殘留物殘留。又，由於剝離後之再貼附亦容易，故可順利地進行研磨墊之剝離/固定，可有效率地進行更換作業。
[先前技術文獻] [專利文獻]
[專利文獻1]日本特許第5765858號說明書
上述具備有吸附層之研磨墊有助於研磨作業之效率化，並且可成為研磨面之高精度化的助力。因此，亦成為可應對對近年來以半導體構件的高密度化、高纖細化、大面積化為背景之研磨製品的高平坦度之要求。
然而，根據本發明者等，確認到即使在適用上述具備吸附層之研磨墊的研磨方法中，亦對被研磨物表 面產生難以預料的傷痕或粗糙。亦有不能認為係研磨墊及使用中之研磨劑成為主要因素造成此研磨精度之降低之情形，因而要求其對策。因此，本發明提供一種適用上述具備吸附層之研磨墊的研磨方法，並可持續地進行穩定的研磨作業者。
本發明人等為了上述目的，精心地研究之結果，著眼於改善研磨墊與固定盤之固定狀態。具體而言，係針對固定盤之表面狀態，特別是表面粗度進行嚴密的規定，藉此改善研磨墊之固定狀態，而可解決上述課題，進而完成本發明。
亦即，本發明係一種研磨方法，其係將研磨墊固定於固定盤後，對前述研磨墊一邊加壓被研磨物一邊使其滑動而進行研磨，其中，前述研磨墊係包含用以吸附並固定於前述固定盤之吸附層、及用以研磨前述被研磨物之研磨層；前述吸附層包含使選自下列之至少1種聚矽氧交聯而成的組成物：包含僅在兩末端具有乙烯基之直鏈狀聚有機矽氧烷之聚矽氧(silicone)、包含在兩末端及側鏈具有乙烯基之直鏈狀聚有機矽氧烷之聚矽氧、包含僅在末端具有乙烯基之分支狀聚有機矽氧烷之聚矽氧、及包含在末端及側鏈具有乙烯基之分支狀聚有機矽氧烷之聚矽氧；將前述固定盤之表面粗度(Ra)設為0.01至0.7μm後，將前述研磨墊之吸附層吸附固定於前述固定盤。
以下，針對本發明詳細地進行說明。如上所述，本發明在研磨作業時，改良固定盤之表面狀態，在其上吸附固定研磨墊，藉此可獲得較佳的研磨品質。如此地，在本發明所著眼之固定盤之表面狀態的表面粗度，係與本發明適用之研磨墊的吸附層之特性相關聯。
亦即，此研磨墊之吸附層係對固定盤以物理性吸附而固定者。此固定狀態之特色係有剪切力(相對於固定盤表面為水平方向之固定強度)較高，另一方面，剝離力(相對於固定盤表面為垂直方向之固定強度)較低之特點。
在此，在上述之本案申請人所製作之研磨墊中，考量吸附層與固定盤之固定強度之關係，吸附層表面之表面粗度設定於特定範圍(參照專利文獻1之請求項第1項)。雖然對此研磨墊的吸附層表面之適當化係有效的，但依據本發明者等，此研磨墊之改良係藉由將固定盤之表面粗度調整成適當，而可更有效地發揮。
亦即，固定盤之表面粗度為較粗時，即使使研磨墊側(吸附層)之表面粗度處理成適當，仍有研磨力無法均勻地傳遞之情形。此時，在研磨墊固定狀態產生不佳情況，產生研磨墊微妙之偏移，視情況，產生研磨墊從固定盤的剝離。又，如此會對研磨精度造成影響之固定盤的表面狀態，並非只限於產生自研磨作業之初期階段。亦即，可能有從製造當初固定盤之表面粗度較粗之情形，亦有起初為平滑且表面粗度較小之固定盤在使用過程發生變化之情形。在後者之情形中，推測為例如由於在研磨墊之更換 作業等的接觸造成表面粗度增大。本發明係考量此等之情事，並且不論其履歷而以將固定盤之表面狀態調整至較佳為特徵。
針對本發明之研磨方法更詳細地說明。在以下之說明中，針對本發明所適用之研磨墊之構成、固定盤之表面粗度及其調整方法進行說明。
A. 研磨墊
本發明所使用之研磨墊係以固定盤側之吸附層與被研磨物側之研磨層作為必須構成。
有關吸附層之材質，基本上係與上述本發明人等之先前研磨墊所適用者相同。亦即，係使選自下列至少1種聚矽氧交聯而成的組成物積層而形成：包含僅在兩末端具有乙烯基之直鏈狀聚有機矽氧烷之聚矽氧、包含在兩末端及側鏈具有乙烯基之直鏈狀聚有機矽氧烷之聚矽氧、包含僅在末端具有乙烯基之分支狀聚有機矽氧烷之聚矽氧、及包含在末端及側鏈具有乙烯基之分支狀聚有機矽氧烷之聚矽氧。
上述聚矽氧之具體例可舉化1之化合物作為直鏈狀聚有機矽氧烷之例。又，可舉化2之化合物作為分枝狀聚有機矽氧烷之例。
(式中R表示下述有機基，n表示整數)
(式中R表示下述有機基，m、n表示整數)
在化1、化2中取代基(R)之具體例可列舉甲基、乙基、丙基等烷基、苯基、甲苯基等芳基、或鍵結於此等基的碳原子之氫原子的一部分或全部經鹵素原子、氰基等取代之同種或不同種的未取代或取代之脂肪族不飽和基除外的1價烴基。較佳係其至少50莫耳%為甲基者。取代基可為不同種亦可為同種。又，該聚矽氧烷可單獨亦可為2種以上之混合物。
又，數平均分子量為30000至100000之構成吸附層之聚矽氧係具有適當的吸附作用。但是，調整表面粗度時，適用之聚矽氧的數平均分子量與製造階段之燒製溫度會造成影響。為了容易發揮適當的表面粗度，聚矽氧之數平均分子量以30000至60000為佳。
在本發明所使用之研磨墊除了吸附層以外，研磨層亦成為必要之構成要素。此研磨層係適用一般研磨墊所適用之研磨布。可適用例如以尼龍、聚胺基甲酸酯、 聚對苯二甲酸乙二酯等所形成之不織布、發泡成形體等。又，其表面(研磨面)之形狀不限於平坦者，亦可適當地形成用以保持研磨劑之溝等。
又，該研磨墊較佳係在吸附層與研磨層之間具有用以支撐兩者之基材者。吸附層係由薄的有機物所構成且富有可撓性，與研磨層直接接合時操作性差。因此，藉由將具有適度剛性之基材設定於兩者之間，可確保研磨墊之操作性。又，藉由對研磨墊適度地賦予剛性，亦可抑制研磨作業中之變形。
基材可適用片狀之樹脂材料。具體而言，為聚酯、聚乙烯、聚苯乙烯、聚丙烯、尼龍、胺基甲酸酯、聚偏氯乙烯、聚氯乙烯等之樹脂。較佳為聚酯系樹脂材料，聚對苯二甲酸乙二酯(PET)、萘二甲酸乙二酯(PEN)，特佳為PET。基材可為單層，但亦可以複數之樹脂形成多層結構。
在上述之以吸附層及研磨層所構成之研磨墊中，吸附層之厚度較佳為20至30μm。又，成為研磨層之研磨布的厚度可使用0.5至3mm者。再者，因應所需被設定之基材厚度以50至200μm為佳。
再者，使用於本發明之研磨墊較佳係吸附層之固定盤側表面之表面粗度(Sa)為0.06μm以下者。超過0.06μm時，可能對研磨力之面內均勻性產生影響。有關該下限值，本來不應受到限制，但吸附層之可製造最小值為0.02μm。此外，在此之表面粗度為算術平均粗度(Ra)。
此外，所謂吸附層之表面粗度為吸附層面內之平均意義，為針對吸附層之中心部、端部(外周部)等複數部分的表面粗度之測定值的平均。較佳係採用對吸附層之中心部與兩端部之3點之表面粗度的平均值。而且，為了發揮更適當的研磨性能，較佳係在吸附層之表面粗度具有均勻性。具體而言，關於吸附層之中心部的表面粗度(Sc)及吸附層之端部的表面粗度(So)，較佳係Sc與Sa之差、及So與Sa之差皆為0.02μm以下。此外，關於吸附層之端部的表面粗度較佳係在研磨墊直徑之兩者的兩端具備前述關係。
B. 固定盤之表面狀態
在本發明，將上述說明之研磨墊吸附固定於固定盤，研磨被研磨物。再者，在固定研磨墊之前，將固定盤之表面粗度調整至0.01至0.7μm。
固定盤之表面粗度超過0.7μm時，研磨墊之固定狀態以微小之方式產生不安定性，造成降低研磨精度之情形。又，固定盤之表面太粗時，亦有研磨墊剝離之虞。此表面粗度較佳是盡可能地降低，但從現實的觀點而言，將0.01μm設為下限值。如此地，本發明中，就謀求從研磨墊及研磨劑等之研磨作業的中心構件以外之方向提升被研磨物之研磨精度之方法而言，規定固定盤之表面狀態。此外，此表面粗度亦為算術平均粗度(Ra)。又，該固定盤之表面粗度亦較佳為採用面內之平均值，較佳為將其中心 部、端部(外周部)等之複數部分的表面粗度之測定值的平均設為固定盤之表面粗度。
又，有關此固定盤之表面粗度較佳係控制在0.01至0.25μm。各種材料之研磨作業中，如第1圖所示，較多是將固定盤及研磨墊配置於下方，其上配置被研磨物而進行研磨其單面，但亦有如第2圖所示，研磨被研磨物之兩面，從其上下面同時押壓研磨墊進行研磨作業。在此等中，第1圖之單面研磨及第2圖之兩面研磨之中，在下側之研磨面(下部固定盤)，藉由將固定盤之表面粗度控制於0.7μm以下可獲得有效之效果。另一方面，第2圖之上側的研磨面(上部固定盤)，由於重力的關係致使固定盤與研磨墊之吸附力降低，故較佳為考量此而更降低固定盤之表面粗度。因而，考量如第2圖般自上下面進行研磨作業時，固定盤之表面粗度控制較佳為在0.01至0.25μm。此外，再如第1圖之單面研磨中，使固定盤之表面粗度設為0.25μm以下亦有效果。
在此，調整固定盤之表面粗度之具體方法，可舉在設置研磨墊前，研磨固定盤表面而成為上述範圍。但是，對於大面積之固定盤，難以均勻地調整表面粗度。因此，作為較佳的固定盤之表面粗度之調整法係使表面粗度為0.01至0.7μm之膜材接著於固定盤之表面。藉由以膜材被覆固定盤表面，可迅速地形成期望之表面粗度。又，即使對於大面積之固定盤，亦可賦予均勻的表面粗度。此外，該膜材之更佳表面粗度為0.01至0.25μm。
膜材較佳係材質由PET樹脂、丙烯酸樹脂、氯乙烯樹脂、ABS樹脂等有機材料或塑膠材料所構成者。膜材是為了確保操作性及對研磨劑等液體之耐腐蝕性。其厚度係無特別限制，但以50μm至3.0mm為佳。又，膜材只要為至少與研磨墊相同之形狀/面積即可，不一定需要被覆固定盤全面。不過，若在研磨作業中膜材與固定盤之間有研磨劑侵入時，有可能引起膜剝離，故以膜材被覆固定盤表面為較佳。
膜材與固定盤之接著以接著膠帶或接著劑接著為佳。由於必須穩定地固定研磨墊，因而藉由膜材與固定盤強固地接合。關於此點，由於研磨墊係在研磨步驟中需更換的前提下，必須成為以吸附層產生適度的接合力，但是由於膜材原則上不需更換，故即使牢固地接著於固定盤亦無問題。接著劑可使用例如橡膠系接著劑、丙烯酸系接著劑、熱熔膠接著劑等。
此外，在本發明，特徵在於控制固定盤之表面狀態，關於固定盤之材質係無限定。研磨裝置用之固定盤有氧化鋁等之陶瓷製、不鏽鋼製、SiC製、鋼製等之固定盤，但是本發明對於任一者均為有用。
C. 研磨墊之固定、本發明之研磨方法
以如上述之方式調整固定盤之表面粗度後，將研磨墊(吸附層)吸附固定於固定盤。此研磨墊之固定係只要將固定盤對位於研磨墊並載置，輕輕按押即可。
將研磨墊固定於固定盤後，一邊供給研磨劑一邊將被研磨物按壓於研磨墊而進行研磨作業。此研磨作業之條件可與通常之研磨方法相同。只要針對被研磨物之材質、研磨劑之種類/粒度、被研磨物考量所要求之表面狀態而設定即可。
又，經過研磨許多之被研磨物，而產生研磨墊之消耗、劣化，故成為必須更換研磨墊。此時，在本發明使用之研磨墊係藉由相對於固定盤表面而朝垂直方向拉伸，可比較容易地剝離。又，新穎之研磨墊的固定作業亦簡易。而且，只要將預定粗度之膜材接著於固定盤時，則在更換研磨墊後亦可穩定地持續研磨作業。
如上所述，本發明之研磨方法中，將所使用之研磨墊適當化、並且將固定盤之表面狀態較佳地調整而進行研磨作業。藉此，可謀求作業性之提升以及研磨面之高精度化。
第1圖係用以說明一般研磨作業(單面研磨)之概略圖。
第2圖係說明用於兩面研磨之裝置構成(上下固定盤)之圖。
第3圖係說明具備吸附層之研磨墊構成之圖。
以下，說明本發明之適當的實施形態。在本實施形態中，使用與第2圖同樣構成之研磨墊。該研磨墊係在PET製之圓形基材(厚度50μm、尺寸810mm)之一面，結合有吸附層(厚度25μm)者，該吸附層係包含僅在兩末端具有乙烯基之直鏈狀聚有機矽氧烷之聚矽氧(分子量30000)。再者，在基材之另一面，接著有牛皮(suede)調之研磨布(型號7355-000F：一節長度450μm、厚度1.37mm)。此外，關於此研磨墊依據JIS B0601-1994，以表面粗度測定器測定吸附層表面的表面粗度(Ra)之結果，平均值為0.04μm。
使用此研磨墊，以第1圖所示之態樣進行矽晶圓(8英寸)之研磨試驗。此研磨裝置之固定盤係材質為陶瓷，表面粗度Ra為1.0μm。本實施形態之研磨試驗係在研磨裝置之固定盤接著平均表面粗度不同之複數個PET製膜(厚度200μm)進行研磨試驗。PET製膜之固定係在固定盤貼合橡膠系接著膠帶再按壓膜進行接著。其後，將研磨墊貼附於固定盤之膜面。矽晶圓之研磨作業係將研磨劑漿液(將Glanzox(Fujimiinc股份有限公司製)以純水稀釋成30倍者)滴下至研磨層(流量150ml/min)。其他之研磨條件如下述。
‧研磨壓力：0.163kgf/cm2
‧研磨墊之旋轉速度：45rpm
‧被研磨構件之旋轉速度：47rpm
‧研磨頭之搖動速度：250mm/min
‧研磨時間：3min
‧研磨片數：1片、10片
在本實施形態之研磨試驗，比較例係於固定盤不接著膜並且固定研磨墊時進行研磨來進行評估。此外，關於接著有表面粗度0.8μm膜之研磨試驗係稱為參考例。
再者，研磨試驗後，以純水洗淨晶圓之被研磨面，以無塵狀態使其乾燥後，觀察研磨面，計算傷痕之大小及數目，利用從100點滿分之扣分法進行評估。此時，大傷痕係加大扣分。關於評估結果，95分以上100分以下設為「◎」，90分以上且未達95分設為「○」，85分以上且未達90分設為「△」，再者，未達85分設為「×」。該評估結果示於表1。
從表1可知，在實施例1至4及比較例與參考例中，在研磨初期階段(研磨片數：1片)中，在研磨精度 任一者皆沒有特別的問題。但是，通過增大研磨片數(10片)，可看到參考例與比較例之研磨精度降低。推測此係隨著片數增加而研磨墊之消耗增加，研磨層與被研磨材表面之摩擦條件變動、以及因此所致之研磨墊與固定盤之固定狀態變化產生相互地作用，而對被研磨材表面造成影響。從該結果可確認出，改善固定盤之表面粗度之必要性、及作為其基準之0.7μm以下的表面粗度之必要性。
此外，在通常之矽晶圓的研磨步驟中，不限於以1片之研磨墊處理10片之晶圓，適當地進行更換為通例，故本實施形態有加速試驗之意義。不過，研磨墊之消耗並非可容易地預測者。因而，本實施形態之評估結果顯示即使墊產生預期外之消耗，藉由調整固定盤之表面狀態，亦可維持研磨品質。在本實施形態使用之膜材的接著為比較簡易的作業。由於藉由如此之對應顯示出可維持研磨品質，故本實施形態可謂有用之研究。
[產業上之利用可能性]
如上述說明，本發明之研磨方法具備藉由使用具有吸附層之研磨墊所產生之便利性，並且可持續地形成高品質之研磨面。依據本發明，即使對於朝大徑化、大面積化進展之晶圓或顯示器面板亦可提供高精度的研磨面。

Claims (5)

  1. 一種研磨方法，係將研磨墊固定於固定盤後，對前述研磨墊一邊加壓被研磨物一邊使其滑動而進行研磨，其中，前述研磨墊係包含用以吸附並固定於前述固定盤之吸附層、及用以研磨前述被研磨物之研磨層；前述吸附層係包含使選自下列至少1種的聚矽氧交聯而成的組成物：包含僅在兩末端具有乙烯基之直鏈狀聚有機矽氧烷之聚矽氧、包含在兩末端及側鏈具有乙烯基之直鏈狀聚有機矽氧烷之聚矽氧、包含僅在末端具有乙烯基之分支狀聚有機矽氧烷之聚矽氧、及包含在末端及側鏈具有乙烯基之分支狀聚有機矽氧烷之聚矽氧；將前述固定盤之表面粗度(Ra)設為0.01至0.7μm之後，將前述研磨墊之吸附層吸附固定於前述固定盤。
  2. 如申請專利範圍第1項所述之研磨方法，係將表面粗度(Ra)為0.01至0.7μm之膜接著於固定盤之表面，並且將研磨墊之吸附層吸附固定。
  3. 如申請專利範圍第1或2項所述之研磨方法，其中，研磨墊之吸附層係其表面粗度之平均值(Sa)為0.02至0.06μm。
  4. 如申請專利範圍第1至3項中任一項所述之研磨墊，其中，吸附層之厚度為20至30μm。
  5. 如申請專利範圍第1或4項所述之研磨方法，其中，研 磨墊係在吸附層與研磨層之間具備基材，前述基材係包含破斷強度210至290MPa、破斷伸度80至130%之樹脂。
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