TW201815670A - 蝕刻用於電路及薄膜熱結構的碳奈米管片材之方法 - Google Patents
蝕刻用於電路及薄膜熱結構的碳奈米管片材之方法 Download PDFInfo
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- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 64
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 60
- 239000000463 material Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000005530 etching Methods 0.000 title claims abstract description 10
- 239000010409 thin film Substances 0.000 title claims abstract description 7
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 claims description 14
- 235000010344 sodium nitrate Nutrition 0.000 claims description 7
- 239000004317 sodium nitrate Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000005304 joining Methods 0.000 claims description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 238000005520 cutting process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 1
- 239000005750 Copper hydroxide Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910001956 copper hydroxide Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- -1 hydrogen Sodium oxide Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 108091070501 miRNA Proteins 0.000 description 1
- 239000002679 microRNA Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/14—Etching locally
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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Abstract
一種用於蝕刻電路及薄膜熱結構的碳奈米管(CNT)片材之方法。方法包含:在導電的碳奈米管材料片上形成遮罩;以及,電化學地移除碳奈米管材料的未被遮罩部份。
Description
本揭示大致上關於碳奈米管(CNT)片材,特別關於蝕刻用於電路及薄膜熱結構的碳奈米管(CNT)片材之方法。
如同此技藝中所知般,在電路及薄膜熱結構的領域之碳奈米管材料之成長受限於沒有足夠的方法來產生以小尺寸(米爾)耦合的各式各樣之複雜形狀集合。手工或人工切割是冗長及令人厭煩的且無法製造所需之準確尺寸。雷射切割是可行的,但是一次一個地產生結構,產生的結構接著必須被傳送至平台。無法如同電路板產業般地取得大量製造的規模經濟。
CNT材料的蝕刻發生在奈米尺寸等級,其中,單一及小束的CNT管在微電路配置中定向成形成電子構件。在半導體處理中使用的典型酸或基本蝕刻劑以及臭氧已用以製造顯微組件等級(<微米)電路。藉由手工切割及雷射 切割,也已製造天線電路結構。也有報告揭示毫米至米尺寸的結構實例。
根據本揭示,提供碳奈米管材料圖型化的方法,包括電化學地移除碳奈米管材料的未被遮罩的部份。
在一實施例中,提供蝕刻用於電路及薄膜熱結構的碳奈米管(CNT)片材之方法。方法包含:在導電的CNT片材上形成遮罩;以及,電化學地移除CNT材料的未被遮罩的部份之方法。
在一實施例中,方法包含將移除的CNT材料接合至基底。
在一實施例中,電化學地從CNT移除遮罩。
在一實施例中,CNT的電化學移除包含將被遮罩的CNT材料置於溶液中以及在溶液與導電CNT之間施加電位。
在一實施例中,遮罩是導電的。
在一實施例中,溶液是熔化的硝酸鈉。
在一實施例中,溶液是濃縮的氫氧化鈉。
揭示的一或更多實施例的細節揭示於附圖及下述說明中。從說明、圖式、及申請專利範圍將更清楚本揭示的其它特點、目的、及優點。
圖1是根據揭示之用於蝕刻電路及薄膜熱結構的碳奈米管片材之方法的流程圖。
現在參考圖1,顯示根據揭示之用於蝕刻電路及薄膜熱結構的碳奈米管片材之方法的流程圖。方法100包含在導電的CNT材料片材上形成遮罩110;電化學地移除未被遮罩之CNT材料部份120;以及,從CNT材料移除遮罩130。
更特別地,方法包含下述步驟:(A)設置導電的CNT片;此處,舉例而言,從位於57 Daniel Webster Highway Merrimack,NH 03045之Nanocomp Technology取得的獨立CNT片,此處具有例如0.5至2米爾(mil)範圍的厚度;(B)以例如厚度約0.1米爾至約1.0米爾的銅飛邊等導電體,電鍍CNT片;(C)將第一遮罩固定至銅,以在要形成於下層CNT中之所需的電路或熱導體圖案上,遮罩銅被選取的表面部份,留下未被遮罩的部份(此處,舉例而言,如同印刷電路板製造中所使用般,遮罩材料是膠帶或光可成像光阻材料);(D)使用第一遮罩,以H2SO4蝕刻掉銅的未被遮罩部份,以形成導電遮罩,銅遮罩留下附著至圖型化的銅遮罩之下層CNT; (E)從圖型化的銅遮罩及CNT結構,剝離第一遮罩;(F)提供具有溫度約400-500℃之熔化的硝酸鈉之容器。替代地,提供具有約125至170℃之水中25至65%的氫氧化鈉濃縮溶液之容器;(G)將導因於步驟(E)的結構浸入於步驟(F)中提供的熔化的硝酸鈉中、或者替代地浸入於氫氧化鈉溶液;(H)以結構浸在熔化的硝酸鈉溶液或氫氧化鈉溶液中;在CNT片上施加電壓的10伏特直流電位以及施加另一電位在溶液中約10秒至一分鐘,以蝕刻掉由銅遮罩被蝕刻掉的部份曝露的CNT的部份;(I)將結構從容器移開,冷卻移開的結構,以及,在H2O中清洗掉任何餘留的固化硝酸鈉或是氫氧化銅;(J)將移開的、冷卻的及清洗過的結構置於具有H2SO4及H2O的溶液之容器中,而溶液為約10%的H2SO4;(K)在溶液與CNT之間施加約0.5至5伏特的直流電壓,以電壓的正電位施加至CNT。這是移除銅遮罩及留下獨立的、圖型化的CNT材料片之電化學處理;以及(L)舉例而言,將圖型化的獨立CNT黏著地接合至例如液晶聚合物等適合的介電質或例如FR-4或G-10強化玻璃環氧層板等電路板介電質。
本揭示揭示具有浸浴蝕刻CNT材料的能力之類電路 板製程。在界定的涵蓋圖型中使用銅溢邊會允許銅遮罩之間先取的蝕刻。
現在應瞭解,根據揭示之用於蝕刻電路及薄膜熱結構的碳奈米管(CNT)片材之方法包含:在導電的CNT材料片上形成遮罩;以及,電化學地移除CNT材料的未被遮罩部份。揭示也說明下述特點之一或更多:包含接合移除的CNT材料至基底;其中,從CNT移除遮罩;其中,CNT的電化學移除包含將被遮罩的CNT材料置於溶液中以及在溶液與導電的CNT之間施加電位;其中,遮罩是導電的,以及,其中,遮罩被電化學地移除;其中,溶液是熔化的硝酸鈉;其中,溶液是濃縮的氫氧化鈉。
也應瞭解,揭示說明用於圖型化碳奈米管材料的方法,包括電化學地移除碳奈米管材料的未被遮罩的部份。
已說明本揭示的多個實施例。然而,將瞭解,在不悖離揭示的精神及範圍之下,可以作各式各樣的修改。舉例而言,雖然在CNT上使用導電遮罩,但是,遮罩無需是導電的,其中,以電化學以外的處理來執行遮罩的移除。因此,其它實施例是在下述申請專利範圍的範圍之內。
Claims (5)
- 一種用於蝕刻電路及薄膜熱結構的碳奈米管(CNT)片材之方法,包括:在導電的CNT材料之片上形成遮罩;以及,電化學地移除該CNT材料的未被遮罩部份;其中該電化學地移除該部分的步驟包括:將該被遮罩的CNT材料置於溶液中以及在該溶液與該CNT材料之間施加電位;以及其中該溶液是熔化的硝酸鈉。
- 如申請專利範圍第1項所述的方法,包括將移除的CNT材料接合至基板。
- 如申請專利範圍第1或2項所述的方法,其中該遮罩從該CNT材料移除。
- 如申請專利範圍第1至3項中任一項所述的方法,其中該遮罩為導電的且其中該遮罩被電化學地移除。
- 一種圖案化碳奈米管材料的方法,包含:電化學地移除碳奈米管材料的未被遮罩部份,其中該電化學地移除未被遮罩部份的步驟包括:將被遮罩的碳奈米管材料置於溶液中以及在該溶液與該被遮罩的碳奈米管材料之間施加電位,以及其中該溶液是熔化的硝酸鈉。
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US13/838,606 US9074295B2 (en) | 2013-03-15 | 2013-03-15 | Methods of etching carbon nanotube sheet material for electrical circuit and thin film thermal structure applications |
US13/838,606 | 2013-03-15 |
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TW102123827A TWI644356B (zh) | 2013-03-15 | 2013-07-03 | 蝕刻用於電路及薄膜熱結構的碳奈米管片材之方法 |
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EP (1) | EP2969916B1 (zh) |
JP (1) | JP6121609B2 (zh) |
KR (1) | KR20150114999A (zh) |
CA (1) | CA2896715C (zh) |
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US7160432B2 (en) * | 2001-03-14 | 2007-01-09 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US6802954B1 (en) * | 2002-07-18 | 2004-10-12 | Pacesetter, Inc. | Creation of porous anode foil by means of an electrochemical drilling process |
JP4242832B2 (ja) | 2002-07-03 | 2009-03-25 | シンテック,インコーポレイテッド | ナノ構造複合材料の電界放出カソードの製造方法および活性化処理 |
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JP6121609B2 (ja) | 2017-04-26 |
WO2014143123A1 (en) | 2014-09-18 |
EP2969916A1 (en) | 2016-01-20 |
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CA2896715C (en) | 2018-01-16 |
EP2969916B1 (en) | 2020-01-01 |
CA2896715A1 (en) | 2014-09-18 |
IL239630A0 (en) | 2015-08-31 |
TWI644356B (zh) | 2018-12-11 |
IL239630B (en) | 2019-01-31 |
US9074295B2 (en) | 2015-07-07 |
TW201436024A (zh) | 2014-09-16 |
US20140262821A1 (en) | 2014-09-18 |
KR20150114999A (ko) | 2015-10-13 |
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