TW201810735A - 固晶穩固製程 - Google Patents
固晶穩固製程 Download PDFInfo
- Publication number
- TW201810735A TW201810735A TW105129767A TW105129767A TW201810735A TW 201810735 A TW201810735 A TW 201810735A TW 105129767 A TW105129767 A TW 105129767A TW 105129767 A TW105129767 A TW 105129767A TW 201810735 A TW201810735 A TW 201810735A
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- Prior art keywords
- substrate
- flux
- electrode group
- heating
- solid crystal
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000004907 flux Effects 0.000 claims abstract description 47
- 238000010438 heat treatment Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims description 39
- 230000008569 process Effects 0.000 claims description 24
- 239000007787 solid Substances 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 17
- 230000006641 stabilisation Effects 0.000 claims description 17
- 238000011105 stabilization Methods 0.000 claims description 17
- 238000003825 pressing Methods 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 5
- 239000007788 liquid Substances 0.000 abstract description 4
- 235000011837 pasties Nutrition 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 7
- 229920001621 AMOLED Polymers 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2924/12041—LED
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
本發明關於一種固晶穩固製程,其包含以下步驟:提供複數微型晶片、提供一基板、提供一呈膏狀之助焊劑、一第一置放步驟、一第一加熱加壓步驟、一第二置放步驟及一第二加熱加壓步驟。該第一及第二置放步驟係將部分微型晶片設於基板。該第一加熱加壓步驟係將該助焊劑加熱至呈液態狀,並冷卻該助焊劑而使該晶片與該基板相互定位。該第二加熱加壓步驟係使該晶片之第一電極組與該基板之第二電極組相互熔接,之後冷卻至常溫。
Description
本發明係有關於一種固晶穩固製程。
發光二極體(LED)因其具有較佳色彩飽和度,且輕薄、省電、及壽命較長等諸多優越的特性,而吸引廠商業者積極研發及應用,如LED背光模組、OLED、AMOLED顯示技術。然而,隨著科技之進步,現有之LED技術已無法滿足所欲應用的層面,舉例來說,目前較常使用的AMOLED顯示技術,其缺點在於色彩過度飽和失真、陽光下無法清楚觀看及長久使用後螢幕有烙印之問題。
因此,需要著手研發新一代的技術來解決目前之問題,其中,研發技術重點之一為微發光二極體(Micro-LED)。微發光二極體可應用於顯示器、顯示屏、穿戴式裝置及抬頭顯示件(如google眼鏡)或VR等等3C產品。然而,由於微發光二極體之技術所用到的尺寸都極小(微米級),因此,在製程上要求的精度及良率上十分的嚴苛,要如何提升良率及品質,成為現今亟欲改善的目標。
因此,有必要提供一種新穎且具有進步性之固晶穩固製程,以解決上述之問題。
本發明之主要目的在於提供一種固晶穩固製程,透過二次升溫來分別熔融助焊劑及金屬鍍層,可有效確實地將晶片單元穩固定位於基體單元,提高結合精準度及穩定度,能有效提高製程良率。
為達成上述目的,本發明提供一種固晶穩固製程,其包含以下步驟:提供複數微型晶片,各該微型晶片設有一第一電極組; 提供一基板,並將該基板定位於一固晶機台,該基板設有與該複數第一電極組相對應之複數第二電極組;提供一呈膏狀之助焊劑,將該助焊劑設於該第二電極組;一第一置放步驟,依一第一排列模式地將部分該複數微形晶片之第一電極組設於該基板之第二電極組,該助焊劑連接該第一及第二電極組,其中,該第一排列模式係於縱向上及橫向上間隔地配置;一第一加熱加壓步驟,以一第一預定溫度加熱使該助焊劑呈液態狀,同時進行加壓動作迫使該第一及第二電極組相互靠近,之後冷卻該助焊劑而使該助焊劑定位住該第一及第二電極組;一第二置放步驟,依一第二排列模式地將部分該複數微形晶片之第一電極組設於該基板之第二電極組,該助焊劑連接該第一及第二電極組,其中,該第二排列模式係與該第一排列模式相反;重複該第一加熱加壓步驟;一第二加熱加壓步驟,以一第二預定溫度加熱並加壓使該第一電極組及該第二電極組熔接, 之後冷卻至常溫。
以下僅以實施例說明本發明可能之實施態樣,然並非用以限制本發明所欲保護之範疇,合先敘明。
請參考圖1至圖5,其顯示本發明之一較佳實施例,本發明之固晶穩固製程,其包含以下步驟:
提供複數微型晶片2,各該微型晶片2設有一第一電極組21;提供一基板3,並將該基板3定位於一固晶機台1,該基板3設有與該複數第一電極組21相對應之複數第二電極組31;提供一呈膏狀之助焊劑4,將該助焊劑4設於該第二電極組31;一第一置放步驟,依一第一排列模式地將部分該複數微形晶片之第一電極組21設於該基板3之第二電極組31,該助焊劑4連接該第一及第二電極組21, 31,其中,該第一排列模式係於縱向上及橫向上間隔地配置;一第一加熱加壓步驟,以一第一預定溫度加熱使該助焊劑4呈液態狀,同時進行加壓動作迫使該第一及第二電極組21, 31相互靠近,之後冷卻該助焊劑4而使該助焊劑4定位住該第一及第二電極組21, 31;一第二置放步驟,依一第二排列模式地將部分該複數微形晶片之第一電極組21設於該基板3之第二電極組31,該助焊劑4連接該第一及第二電極組21, 31,其中,該第二排列模式係與該第一排列模式相反;重複該第一加熱加壓步驟;一第二加熱加壓步驟,以一第二預定溫度加熱並加壓使該第一電極組21及該第二電極組31熔接, 之後冷卻至常溫。
值得一提的是,由於該微型晶片2甚小,為了避免夾持力道過大造成該微型晶片2受損,較佳地,係採用一吸嘴6來將該微型晶片2移動至該基板3。同理地,加壓之手法亦可透過專門的一加壓件7來對該微型晶片2施壓,其中,加壓之壓力大小係為每5平方密爾1公克至100公克(1~100g/5mil2
)。該基板3係選自於FR-4基板、BT基板、玻璃、支架、陶瓷、鋁基板、銅基板、矽基板、軟性基板(PI)及藍寶石其中一者。
使用該助焊劑4可以將該第一及第二電極組21, 31之表面的氧化物或污質去除,提高結合品質;並且,該助焊劑4還可以保護待焊接表面不會再度氧化。更重要的是,該第一加熱加壓步驟亦為第一次固晶(預定位),當該助焊劑4冷卻回溫後即會由液態轉變為固態,進而連結固定該第一及第二電極組21, 31,換言之,各該微型晶片2可透過該助焊劑4而定位於該基板3。其中,該第一預定溫度較佳係設定介於120℃至230℃之間,對其他元件較不易產生熱影響,也就是說選用該助焊劑4時,其熔點較佳係位於或低於此溫度區間,以期可較快速地對該助焊劑4進行加熱熔融,節省能源消耗、縮短製程時間。
較詳細地說,該第二電極組31另包含有一金屬鍍層5,在該第一加熱加壓步驟中,該助焊劑4係熔接該第一電極組21及該金屬鍍層5。其中,該金屬鍍層5可透過蝕刻的方式形成。較佳地,該金屬鍍層5之上表面係呈平面狀,而有較多且平順的接觸面積,當與該第一電極組21結合後能處於穩固的狀態。
更詳細地說,該金屬鍍層5由外而內依序設有一錫料層51、一銅料層52及一基底層53,該基底層53之材質選自鎳或鈦,其中,該第二預定溫度係大於或等於該錫料層51之熔點。故可以理解的,該第二加熱加壓步驟主要係要熔融該錫料層51來與該第一電極組21相連結,而等到該錫料層51冷卻回溫後即完成整個該固晶穩固製程,故該第二加熱加壓步驟又可稱為第二次固晶。同理地,為了有較佳之升溫時間及節省加工成本,舉例但不限於,該第二預定溫度較佳係設定大於230℃且不大於330℃。於本實施例中,該第一預定溫度係設定為180℃,而該第二預定溫度係設定為260℃,以期讓該錫料層51能確實地完全熔解,並且該助焊劑4可於此溫度狀態下揮發掉,而有較佳之成品。
要補充地說明的是,該金屬鍍層5亦可有其他態樣,如圖8所示之另一實施例之金屬鍍層5A,該金屬鍍層5A另設有一金料層54,該金料層54係覆設於該錫料層51,其中,該金料層54之厚度為0.2μm,當未進行結合前,該金料層54可以防止其他金屬層氧化,而保持在較良好之狀態。
請再參考圖1至圖5之本實施例,於一方向上相鄰的二該微型晶片2之距離(D)係小於200μm,且各該微型晶片2面積係介於10μm2
至300μm2
之間。由上述可知,各該微型晶片2之尺寸及相鄰間距皆非常細小,故極易因些微變化而產生不良後果,進而降低良率。並且,於本實施例中的各該微型晶片2之面積係小於5 平方密爾(mil2
),因此,為了達到有高良率之製程品質,該第一及第二電極組21, 31係採用二階段式熱壓結合的方式(即該第一及第二次加熱加壓步驟)。
較進一步來說,將原本該第一及第二電極組21, 31所欲結合的行進位移距離切割成二階段進行,讓每次該第一及第二電極組21, 31相互靠近的位移量變小,使得熔融狀態的該助焊劑4或該錫料層51較不易有受力而飛濺的情況發生,相鄰的二該微型晶片2較不會有非預期地電性連接而有短路的情況產生,並且可避免造成該基板3或其他電路、元件有不良影響。較佳地,該助焊劑4可以選用不導電且無腐蝕性的免洗系列(如松香有機系),更可有效避免短路等問題,而有較佳之結合成功率。另一較佳地,該錫料層51之厚度係介於1μm至10μm之間,可更進一步確保該錫料層51受擠壓時不易外溢至二該微型晶片2之間隙間。經過多次實際製程測試,當該錫料層51之厚度為5μm至7μm時,能有較佳的結合品質。
於本實施例中,該助焊劑4係採用單點設置之方式設於該第二電極組31,故除了將該助焊劑4一次全部設於該複數第二電極組31外,亦可隨該第一或第二排列模式的需求依序將該助焊劑4與該複數第二電極相結合。當然,並不侷限於該助焊劑4的設置手法。依各種不同需求,該助焊劑4亦可係採用網版印刷之方式設於該第二電極組31。或是該助焊劑4係採用噴塗之方式設於該第二電極組31,亦無不可。
要補充地是,請參考圖2,較佳地,該固晶穩固製程另提供有一軌道單元8及一加熱器9,該軌道單元8設有一加熱位置及一冷卻位置,該基板3可於該加熱位置及該冷卻位置之間移動地設於該軌道單元8,該加熱器9係設於該加熱位置而對該基板3進行加熱,等加熱完畢後,該軌道單元8即可帶動該基板3及該複數微型晶片2一同移動至該冷卻位置進行降溫。
綜上,本發明固晶穩固製程透過第一及第二加熱加壓步驟,分階段地熔融助焊劑或錫料層,而進行二次固晶,可以提升微型晶片單元與基板3的結合穩定度。並且,助焊劑及錫料層不易外溢至間隙之間,以避免相鄰的二微型晶片產生短路,而確保結合成功率(良率)。此外,助焊劑可以依需求而依特定分布模式來與複數第二電極做結合,以提高結合成功率。
1‧‧‧固晶機台
2‧‧‧微型晶片
21‧‧‧第一電極組
3‧‧‧基板
31‧‧‧第二電極組
4‧‧‧助焊劑
5,5A‧‧‧金屬鍍層
51‧‧‧錫料層
52‧‧‧銅料層
53‧‧‧基底層
54‧‧‧金料層
6‧‧‧吸嘴
7‧‧‧加壓件
8‧‧‧軌道單元
9‧‧‧加熱器
圖1為本發明一實施例之步驟流程圖。 圖2為本發明一實施例之微形晶片結合於基板之作動圖。 圖3為本發明一實施例之第二電極組之局部放大圖。 圖4為本發明一實施例之金屬鍍層之局部放大圖。 圖5及圖6為本發明一實施例第一及第二置放步驟之示意圖。 圖7為本發明一實施例之加熱加壓示意圖。 圖8為本發明又一實施例之金屬鍍層之局部放大圖。
Claims (10)
- 一種固晶穩固製程,包含以下步驟: 提供複數微型晶片,各該微型晶片設有一第一電極組; 提供一基板,並將該基板定位於一固晶機台,該基板設有與該複數第一電極組相對應之複數第二電極組; 提供一呈膏狀之助焊劑,將該助焊劑設於該第二電極組; 一第一置放步驟,依一第一排列模式地將部分該複數微形晶片之第一電極組設於該基板之第二電極組,該助焊劑連接該第一及第二電極組,其中,該第一排列模式係於縱向上及橫向上間隔地配置; 一第一加熱加壓步驟,以一第一預定溫度加熱使該助焊劑呈液態狀,同時進行加壓動作迫使該第一及第二電極組相互靠近,之後冷卻該助焊劑而使該助焊劑定位住該第一及第二電極組; 一第二置放步驟,依一第二排列模式地將部分該複數微形晶片之第一電極組設於該基板之第二電極組,該助焊劑連接該第一及第二電極組,其中,該第二排列模式係與該第一排列模式相反; 重複該第一加熱加壓步驟; 一第二加熱加壓步驟,以一第二預定溫度加熱並加壓使該第一電極組及該第二電極組熔接, 之後冷卻至常溫。
- 如請求項1所述的固晶穩固製程,其中該第一預定溫度係介於120℃至230℃之間。
- 如請求項1所述的固晶穩固製程,其中該第二預定溫度係大於230℃且不大於330℃。
- 如請求項1所述的固晶穩固製程,其中該第二電極組另包含有一金屬鍍層,在該第一加熱加壓步驟中,該助焊劑係熔接該第一電極組及該金屬鍍層,該金屬鍍層由外而內依序設有一錫料層、一銅料層及一基底層,該基底層之材質選自鎳或鈦,該第二預定溫度係大於或等於該錫料層之熔點。
- 如請求項4所述的固晶穩固製程,其中該金屬鍍層另設有一金料層,該金料層係覆設於該錫料層。
- 如請求項4所述的固晶穩固製程,其中該錫料層之厚度係介於1μm至10μm之間。
- 如請求項6所述的固晶穩固製程,其中該錫料層之厚度為5μm至7μm之間。
- 如請求項1所述的固晶穩固製程,其中於一方向上相鄰的二該微型晶片之距離係小於200μm,各該微型晶片之面積係介於10μm2 至300μm2 之間。
- 如請求項1所述的固晶穩固製程,其中該助焊劑係採用網版印刷、單點設置、噴塗等其中一者方式設於該第二電極組。
- 如請求項7所述的固晶穩固製程,其中該金屬鍍層之上表面係呈平面狀,該第一預定溫度為180℃;該第二預定溫度為260℃;該基板係選自於FR-4基板、BT基板、玻璃、支架、陶瓷、鋁基板、銅基板、矽基板、軟性基板(PI)及藍寶石其中一者;該助焊劑係採用單點設置之方式設於該第二電極組,於一方向上相鄰的二該微型晶片之距離係小於200μm,各該微型晶片之面積係小於5 平方密爾(mil2 );該固晶穩固製程另提供有一軌道單元及一加熱器,該軌道單元設有一加熱位置及一冷卻位置,該基板可於該加熱位置及該冷卻位置之間移動地設於該軌道單元,該加熱器係設於該加熱位置而對該基板3進行加熱;加壓之壓力大小係為每5平方密爾1公克至100公克(1~100g/5mil2 )。
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