TW201808649A - 基板的貼合方法及微晶片的製造方法 - Google Patents

基板的貼合方法及微晶片的製造方法 Download PDF

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Publication number
TW201808649A
TW201808649A TW106118421A TW106118421A TW201808649A TW 201808649 A TW201808649 A TW 201808649A TW 106118421 A TW106118421 A TW 106118421A TW 106118421 A TW106118421 A TW 106118421A TW 201808649 A TW201808649 A TW 201808649A
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substrate
bonding
microchip
bonding surface
substrates
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TW106118421A
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TWI697407B (zh
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竹元史敏
鈴木信二
酒井基裕
廣瀬賢一
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日商牛尾電機股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • B01L3/502707—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the manufacture of the container or its components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/16—Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/82—Testing the joint
    • B29C65/8253—Testing the joint by the use of waves or particle radiation, e.g. visual examination, scanning electron microscopy, or X-rays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/02—Preparation of the material, in the area to be joined, prior to joining or welding
    • B29C66/028—Non-mechanical surface pre-treatments, i.e. by flame treatment, electric discharge treatment, plasma treatment, wave energy or particle radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/05—Particular design of joint configurations
    • B29C66/10—Particular design of joint configurations particular design of the joint cross-sections
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    • B29C66/112—Single lapped joints
    • B29C66/1122—Single lap to lap joints, i.e. overlap joints
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/05—Particular design of joint configurations
    • B29C66/301—Three-dimensional joints, i.e. the joined area being substantially non-flat
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/50—General aspects of joining tubular articles; General aspects of joining long products, i.e. bars or profiled elements; General aspects of joining single elements to tubular articles, hollow articles or bars; General aspects of joining several hollow-preforms to form hollow or tubular articles
    • B29C66/51—Joining tubular articles, profiled elements or bars; Joining single elements to tubular articles, hollow articles or bars; Joining several hollow-preforms to form hollow or tubular articles
    • B29C66/53—Joining single elements to tubular articles, hollow articles or bars
    • B29C66/534—Joining single elements to open ends of tubular or hollow articles or to the ends of bars
    • B29C66/5346—Joining single elements to open ends of tubular or hollow articles or to the ends of bars said single elements being substantially flat
    • B29C66/53461—Joining single elements to open ends of tubular or hollow articles or to the ends of bars said single elements being substantially flat joining substantially flat covers and/or substantially flat bottoms to open ends of container bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/71—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the composition of the plastics material of the parts to be joined
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/71—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the composition of the plastics material of the parts to be joined
    • B29C66/712—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the composition of the plastics material of the parts to be joined the composition of one of the parts to be joined being different from the composition of the other part
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/73—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset
    • B29C66/731—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the intensive physical properties of the material of the parts to be joined, by the optical properties of the material of the parts to be joined, by the extensive physical properties of the parts to be joined, by the state of the material of the parts to be joined or by the material of the parts to be joined being a thermoplastic or a thermoset characterised by the intensive physical properties of the material of the parts to be joined
    • B29C66/7311—Thermal properties
    • B29C66/73117—Tg, i.e. glass transition temperature
    • B29C66/73118—Tg, i.e. glass transition temperature of different glass transition temperature, i.e. the glass transition temperature of one of the parts to be joined being different from the glass transition temperature of the other part
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/74—Joining plastics material to non-plastics material
    • B29C66/746—Joining plastics material to non-plastics material to inorganic materials not provided for in groups B29C66/742 - B29C66/744
    • B29C66/7465—Glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/832—Reciprocating joining or pressing tools
    • B29C66/8322—Joining or pressing tools reciprocating along one axis
    • B29C66/83221—Joining or pressing tools reciprocating along one axis cooperating reciprocating tools, each tool reciprocating along one axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/90—Measuring or controlling the joining process
    • B29C66/91—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux
    • B29C66/914—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux
    • B29C66/9141—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux by controlling or regulating the temperature
    • B29C66/91411—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux by controlling or regulating the temperature, the heat or the thermal flux by controlling or regulating the temperature of the parts to be joined, e.g. the joining process taking the temperature of the parts to be joined into account
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/90—Measuring or controlling the joining process
    • B29C66/91—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux
    • B29C66/919—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux characterised by specific temperature, heat or thermal flux values or ranges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/90—Measuring or controlling the joining process
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    • B29C66/919—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux characterised by specific temperature, heat or thermal flux values or ranges
    • B29C66/9192—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux characterised by specific temperature, heat or thermal flux values or ranges in explicit relation to another variable, e.g. temperature diagrams
    • B29C66/91921—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux characterised by specific temperature, heat or thermal flux values or ranges in explicit relation to another variable, e.g. temperature diagrams in explicit relation to another temperature, e.g. to the softening temperature or softening point, to the thermal degradation temperature or to the ambient temperature
    • B29C66/91941—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux characterised by specific temperature, heat or thermal flux values or ranges in explicit relation to another variable, e.g. temperature diagrams in explicit relation to another temperature, e.g. to the softening temperature or softening point, to the thermal degradation temperature or to the ambient temperature in explicit relation to Tg, i.e. the glass transition temperature, of the material of one of the parts to be joined
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
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    • B29C66/90—Measuring or controlling the joining process
    • B29C66/91—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux
    • B29C66/919—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux characterised by specific temperature, heat or thermal flux values or ranges
    • B29C66/9192—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux characterised by specific temperature, heat or thermal flux values or ranges in explicit relation to another variable, e.g. temperature diagrams
    • B29C66/91921—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux characterised by specific temperature, heat or thermal flux values or ranges in explicit relation to another variable, e.g. temperature diagrams in explicit relation to another temperature, e.g. to the softening temperature or softening point, to the thermal degradation temperature or to the ambient temperature
    • B29C66/91941—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux characterised by specific temperature, heat or thermal flux values or ranges in explicit relation to another variable, e.g. temperature diagrams in explicit relation to another temperature, e.g. to the softening temperature or softening point, to the thermal degradation temperature or to the ambient temperature in explicit relation to Tg, i.e. the glass transition temperature, of the material of one of the parts to be joined
    • B29C66/91943—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux characterised by specific temperature, heat or thermal flux values or ranges in explicit relation to another variable, e.g. temperature diagrams in explicit relation to another temperature, e.g. to the softening temperature or softening point, to the thermal degradation temperature or to the ambient temperature in explicit relation to Tg, i.e. the glass transition temperature, of the material of one of the parts to be joined higher than said glass transition temperature
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    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/90—Measuring or controlling the joining process
    • B29C66/91—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux
    • B29C66/919—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux characterised by specific temperature, heat or thermal flux values or ranges
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    • B29C66/91945—Measuring or controlling the joining process by measuring or controlling the temperature, the heat or the thermal flux characterised by specific temperature, heat or thermal flux values or ranges in explicit relation to another variable, e.g. temperature diagrams in explicit relation to another temperature, e.g. to the softening temperature or softening point, to the thermal degradation temperature or to the ambient temperature in explicit relation to Tg, i.e. the glass transition temperature, of the material of one of the parts to be joined lower than said glass transition temperature
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Abstract

本發明的課題，係提供可將至少一方的基板具有翹曲或貼合面的起伏之兩張基板，在高密接狀態下貼合之基板的貼合方法及微晶片的製作方法。
本發明的解決手段之基板的貼合方法，係第1基板，係基板變形的可變形溫度比第2基板的可變形溫度還高的材質；且具有：表面活性化工程，係對第1基板的貼合面及第2基板的貼合面分別進行活性化；堆積工程，係將該第1基板與該第2基板以各貼合面接觸之方式堆積；及變形工程，係使第2基板的貼合面，追隨第1基板的貼合面的形狀變形；變形工程，係藉由以第2基板的可變形溫度以上，且未滿第1基板的可變形溫度的溫度，加熱堆積工程中所得之第1基板與第2基板的堆積體來進行。

Description

基板的貼合方法及微晶片的製造方法
本發明係關於兩張基板的貼合方法及微晶片的製造方法。
於生物化學領域中，注目使用微反應器，進行微量之試藥的分離、合成、抽出或分析等的手法。該微反應器係於例如由矽、矽氧烷樹脂或玻璃等所成的小基板上，藉由半導體微加工技術，形成微尺度的分析用通道等的微晶片所成者。
使用此種微反應器的反應分析系統，被稱為微整合分析系統(Micro Total Analysis System，以下稱為「μTAS」)。依據該μTAS，可根據相對於試藥體積的表面積之比例變大等來進行高速且高精度的反應分析，又，可實現簡潔且自動化的系統。
於微晶片中，藉由於亦稱為微型通道的流通路徑，設置配置有試藥之反應區域等之具有各種功能的功能區域，可構成適合各種用途的微晶片。作為微晶片的用途，可舉出基因解析、臨床診斷、藥物篩選等之化學、生化學、藥學、醫學、獸醫學的分野之分析，或化合物的合 成、環境計測等。
此種微晶片係典型上具有一對微晶片基板對向接著的構造，於至少一方微晶片基板的表面，形成例如寬度10~數100μm，深度10~數100μm程度的細微的流通路徑。作為微晶片基板，因為易於製造，也可進行光學檢測，主要使用玻璃基板。又，在最近，致力於雖然輕量但相較於玻璃基板較不易破損，且廉價之使用合成樹脂基板之微晶片的開發。
於微晶片的製造中，作為兩張微晶片基板的貼合方法，可考量藉由接著劑接著的方法及熱熔接所致之方法等。
然而，該等方法有以下問題。亦即，於藉由接著劑來貼合的方法中，有會產生接著劑侵入微小流通路徑而堵塞流通路徑，微小流通路徑的一部分變狹窄而流通路徑的直徑成為不均勻，進而，流通路徑壁面的均質特性雜亂的產生之問題之虞。又，於藉由熱熔接來貼合的方法中，有以加熱熔融溫度以上來熔接的話，在加熱階段中流通路徑被破壞，或流通路徑未保持為所定剖面形狀，故有難以進行微晶片的高功能化的問題。
因此，提案有對兩張基板之貼合面個別照射真空紫外線及於大氣壓或其附近下將加工氣體電漿化，並使該電漿化之加工氣體接觸基板的表面，藉此，讓該各基板的貼合面活性化，將兩張基板以各貼合面彼此接觸之方式堆積接合的方法(例如參照專利文獻1~專利文獻5)。
又，也提案有藉由讓結合膜存在於兩張基板之間，對該結合膜照射紫外線，使該結合膜發生接著性，藉此，接合兩張基板的方法(例如參照專利文獻6)。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利第3714338號公報
[專利文獻2]日本特開2006-187730號公報
[專利文獻3]日本特開2008-19348號公報
[專利文獻4]國際公開第2008/087800A1號
[專利文獻5]日本專利第5152361號公報
[專利文獻6]日本特開2009-197169號公報
近年來，研討可對應複數檢體的同時測定、測定法相異之多數測定等的多彩之測定的微晶片。
對於此種微晶片的實現，需要將複數測定檢測部組入1個微晶片，及於測定檢測部構築對應複數測定法之多樣的測定構造。所以，必然地1個微晶片會大型化。
大型的微晶片係例如橫縱設為85mm×128mm程度，構成該微晶片的兩張微晶片基板的厚度分別例如為數mm以上。
然而，於大型化的微晶片中，發生如以下所 述的問題。
如上所述，微晶片係典型上具有一對(兩張)微晶片基板對向而被接合的構造。然後，於大型的微晶片中，當然，一對微晶片基板本身也變大。伴隨該狀況，各微晶片基板不可避地具有之貼合面的起伏及微晶片基板本身的翹曲等，也會大幅影響一對微晶片基板彼此的接合狀態。
亦即，因為微晶片基板的貼合面的起伏及微晶片基板本身的翹曲，在堆積一對微晶片基板彼此時，也發生貼合面無法整面密接之狀況。
圖3係概略揭示先前之微晶片的製作方法之一例的說明圖。
具體說明微晶片的製作方法的話，首先，對於第1微晶片基板51的貼合面51a及第2微晶片基板55的貼合面55a，分別照射從紫外線光源59放射的真空紫外線L(圖3(a-1)及(a-2))。在此，作為於第1微晶片基板51的貼合面51a產生起伏(於圖3中以虛線包圍的部分)。
接著，以第1微晶片基板51的貼合面51a及第2微晶片基板55的貼合面55a接觸之方式，堆積第1微晶片基板51及第2微晶片基板55。於所得的堆積體50中，於第1微晶片基板51的貼合面51a中具有起伏的部分，形成微小的空間S(圖3(b))。
進而，對該堆積體50進行加壓及加熱(圖3(c))。如此，藉由加壓及加熱，獲得接合體57。雖然也有於接合體57中，前述的空間S消失，第1微晶片基板51與第2微晶片 基板55的貼合面51a、55a彼此整面密接而良好地結合之狀況，但如圖3(d)所示，大多是前述的空間S未消失而殘留成為接合的不良處之狀況。
如此，不限於微晶片基板，貼合的基板越大，越容易發生因為基板的貼合面的起伏及基板本身的翹曲，產生基板彼此的接合不良處，及兩張基板的接合面挾持到氣泡等的問題。
又，有基板的貼合面的起伏或基板本身的翹曲之狀態中貼合兩張基板時，起因於前述之起伏或翹曲而接合體的一部分產生應力集中，有時當初已接合之基板的至少一部分區域，也可能發生因為該應力集中而剝落的問題。
又，於接合體中接合面存在氣泡時，該狀況有成為進行光學測定時的雜訊的原因之情況。
因為以上的問題點，難以製造比較大尺寸的微晶片，現狀只能製造例如載玻片程度之大小的小型微晶片。因此，難以將複數測定檢測部組入1個微晶片，及於測定檢測部構築對應複數測定法之多樣的測定構造。
再者，微晶片基板的厚度為例如較薄之10μm程度等時，因為該微晶片基板的可撓性變高，可提升兩張微晶片基板的接合面的密接性，但是，製作大型微晶片時各微晶片基板的厚度會成為數mm以上，故難以選擇該手法。
本發明係有鑑於以上情況所發明者，其目的係提供可將至少一方的基板具有翹曲或貼合面的起伏之兩張基板，在高密接狀態下貼合之基板的貼合方法及微晶片 的製作方法。
本發明的基板的貼合方法，係貼合分別由玻璃或樹脂所成之第1基板及第2基板的方法，其特徵為：第1基板，係基板變形的可變形溫度比第2基板的可變形溫度還高的材質；具有：表面活性化工程，係對第1基板的貼合面及第2基板的貼合面分別進行活性化；堆積工程，係將該第1基板與該第2基板以各貼合面接觸之方式堆積；及變形工程，係使前述第2基板的貼合面，追隨前述第1基板的貼合面的形狀變形；前述變形工程，係藉由以第2基板的可變形溫度以上，且未滿第1基板的可變形溫度的溫度，加熱前述堆積工程中所得之第1基板與第2基板的堆積體來進行。
於本發明的基板的貼合方法中，於前述變形工程中，對被堆積之兩張基板往相互接近的方向進行加壓為佳。
於本發明的基板的貼合方法中，可設為前述表面活性化工程，係對前述第1基板的貼合面及前述第2基板的貼合面分別照射真空紫外線的紫外線照射處理工程的構造。
於本發明的基板的貼合方法中，可設為前述表面活性化工程，係使藉由大氣壓電漿而電漿化的加工氣體，接觸前述第1基板的貼合面及前述第2基板的貼合面個別的電漿氣體處理工程的構造。
本發明的微晶片的製造方法，其特徵為：於分別由玻璃或樹脂所成的第1基板及第2基板中，於該第1基板及該第2基板的至少一方的貼合面，設置有流通路徑形成部分；藉由利用前述之基板的貼合方法來貼合前述第1基板及前述第2基板，獲得於內部具有流通媒體之流通路徑的微晶片。
於本發明的微晶片的製造方法中，前述流通路徑形成部分，係僅設置於前述第1基板的貼合面為佳。
依據本發明的基板的貼合方法，於變形工程中藉由利用第2基板的可變形溫度以上，且未滿第1基板的可變形溫度的溫度進行加熱，僅第2基板會軟化，所以，可讓第2基板的貼合面追隨第1基板的貼合面的形狀變形，可使接合體的接合面整面確實密接，所以，可在高密接狀態下貼合至少一方基板具有翹曲及貼合面的起伏之第1基板及第2基板。
又，依據本發明的微晶片的製作方法，因為藉由經變形工程而第2基板的貼合面追隨第1基板的貼合面 的形狀變形，所以，可使所得之微晶片的接合面整面確實地密接。所以，可在高密接狀態下貼合例如大面積的微晶片基板等之至少一方基板具有翹曲或貼合面的起伏的第1基板及第2基板，結果，即使是大型的微晶片，也可高信賴性地形成所期望的流通路徑。
10‧‧‧堆積體
11‧‧‧第1基板
11a‧‧‧貼合面
15‧‧‧第2基板
15a‧‧‧貼合面
17‧‧‧接合體
17a‧‧‧接合面
19‧‧‧紫外線光源
21‧‧‧第1微晶片基板
21a‧‧‧貼合面
22‧‧‧注入口
23‧‧‧排出口
24‧‧‧流通路徑形成部分
25‧‧‧第2微晶片基板
25a‧‧‧貼合面
27‧‧‧微晶片
27a‧‧‧接合面
50‧‧‧堆積體
51‧‧‧第1微晶片基板
51a‧‧‧貼合面
55‧‧‧第2微晶片基板
55a‧‧‧貼合面
57‧‧‧接合體
59‧‧‧紫外線光源
60‧‧‧殼體
61‧‧‧電極
62‧‧‧介電體層
63‧‧‧氣體供給口
64‧‧‧噴嘴
L‧‧‧真空紫外線
R‧‧‧流通路徑
S‧‧‧空間
[圖1]概略揭示本發明之基板的貼合方法之一例的說明圖。
[圖2]概略揭示本發明之微晶片的製作方法之一例的說明圖。
[圖3]概略揭示先前之微晶片的製作方法之一例的說明圖。
[圖4]概略揭示本發明所用之大氣壓電漿裝置的一例之構造的說明用剖面圖。
以下，針對本發明的實施形態，進行詳細說明。
[基板的貼合方法]
圖1係概略揭示本發明之基板的貼合方法之一例的說明圖。
本發明的基板的貼合方法，係具有對第1基板11的貼合面11a及第2基板15的貼合面15a分別進行活性化的表面活性化工程(圖1(a-1)及(a-2))、將該第1基板11與該第2基板15以個別貼合面11a、15a接觸之方式堆積的堆積工程(圖1(b))、及使第2基板15的貼合面15a，追隨第1基板11的貼合面11a的形狀變形的變形工程(圖1(c))。
[基板]
本發明所適用的第1基板11及第2基板15，係分別選自由玻璃及合成樹脂所成之群的材料所成者。
作為構成基板11、15的合成樹脂，可使用矽氧烷樹脂、環烯烴樹脂(環烯烴聚合物(COP)及環烯烴系共聚物(COC)等)、丙烯酸樹脂等。例如基板11、15為微晶片基板時，使用具有優良光透射性的材料為佳，作為具有優良光透射性的樹脂，例如，可使用丙烯酸樹脂或環烯烴樹脂。
作為構成基板11、15的玻璃，可使用石英玻璃、鹼玻璃、硼矽酸玻璃等。
於本發明中，基板的可變形溫度，係該基板變形的溫度，具體來說，比構成該基板之材料的玻璃轉移點(Tg)還稍微低的(Tg-10)℃。該基板的可變形溫度，有因為射出成型時的樹脂投入量及保壓以及溫度降低速度而若干變化之狀況。
第1基板11及第2基板15，係設為第1基板11的可變形溫度比第2基板15的可變形溫度還高的材質。
亦即，將第1基板11的玻璃轉移點設為Tg1，將第2基板15的玻璃轉移點設為Tg2時，第1基板11及第2基板15的可變形溫度，係滿足關係式：(Tg1-10)>(Tg2-10)。
第1基板11及第2基板15的大小，係例如橫縱設為85mm×128mm，厚度分別設為1~3mm。
依據本發明的基板的貼合方法，如以下所詳述般，即使厚度為例如1~3mm的厚基板，也可讓第2基板15的貼合面15a追隨第1基板11的貼合面11a的形狀變形，可使所得之接合體17的接合面17a整面有效地密接。
[表面活性化工程]
表面活性化工程，係對第1基板11的貼合面11a及第2基板15的貼合面15a分別照射真空紫外線L的紫外線照射處理工程，或使藉由大氣壓電漿而電漿化的加工氣體，接觸第1基板的貼合面及第2基板的貼合面個別的電漿氣體處理工程為佳。於圖1中作為進行紫外線照射處理工程者。
(1)紫外線照射處理工程
作為表面活性化工程，於選擇紫外線照射處理工程之狀況中，從紫外線光源19，對基板11、15的貼合面11a、15a，照射波長200nm以下的真空紫外線L。
作為紫外線光源19，例如可合適地使用於波長172nm具有輝線之氙準分子燈等的準分子燈、於波長185nm具有輝線的低壓水銀燈、於波長120~200nm的範圍具有輝線 的氘燈。
被照射至基板11、15的貼合面11a、15a之真空紫外線L的照度係例如10~100mW/cm2。
又，對於基板11、15的貼合面11a、15a之真空紫外線L的照射時間，係因應構成基板11、15的材料而適當設定，例如5秒鐘以上為佳，更理想是10~60秒鐘。
(2)電漿氣體處理工程
作為表面活性化工程，選擇電漿氣體處理工程之狀況中，使藉由大氣壓電漿而電漿化的加工氣體，與基板的貼合面接觸。
作為加工氣體，使用以氮氣、氬氣等作為主成分，含有氧氣0.01~5體積%所成者為佳。或者，也可使用氮氣與潔淨乾燥空氣(CDA)的混合氣體。
又，電漿氣體處理所致之處理時間係例如5~100秒鐘。
如此一來，藉由進行對於基板的表面活性化處理，基板11、15之貼合面11a、15a係成為適合接合的狀態，末端成為以羥基(OH基)或羧基(COOH基)置換的狀態。
[堆積工程]
於堆積工程中，如圖1(b)所示，於室溫環境下，將第1基板11及第2基板15，堆積成第1基板11的貼合面11a與第 2基板15的貼合面15a相互接觸之狀態。
藉由經堆積工程，獲得第1基板11與第2基板15堆積之狀態的堆積體10。
在此，作為於第1基板11的貼合面11a產生起伏(於圖1中以虛線包圍的部分)。所以，於所得的堆積體10中，於第1基板11的貼合面11a中具有起伏的部分，形成空間S。
再者，於圖1的範例中，作為第2基板15未產生起伏，但是，即使第2基板15也產生起伏或翹曲，也可獲得本發明的效果。
[變形工程]
於變形工程中，可藉由對堆積工程中所得之堆積體10進行加熱，使第2基板15的貼合面15a追隨第1基板11的貼合面11a的形狀變形。
<加熱條件>
加熱溫度係第2基板15的可變形溫度以上，且未滿第1基板11的可變形溫度的溫度，加熱時間係例如60~300秒鐘。
於該變形工程中，與加熱同時及/或加熱前後，對堆積體10的兩張基板11、15往相互接近的方向進行加壓為佳。於圖1(c)中，說明方便上以反白箭頭表示對於堆積體10的加壓力。
對於堆積體10的加壓，係例如即使以一定加壓條件進 行，也適當調整處理條件而分成複數階段，例如兩階段來進行亦可。
加壓條件可因應構成基板的材料及加熱溫度而適當設定。
舉出具體的加壓條件的話，加壓力為例如0.1~5MPa，加壓時間為例如60~300秒鐘。又，將對於基板的加壓處理分成例如兩階段來進行時依據狀況，第2次的加壓處理的加壓力，可於前述數值範圍內，設定為比第1次的加壓處理的加壓力還小。又，第2次的加壓處理的加壓時間，可於前述數值範圍內，設定為比第1次的加壓處理的加壓時間還長。
於該變形工程中，如下所述，第2基板15會變形。亦即，以第2基板15的可變形溫度以上，且未滿第1基板11的可變形溫度的溫度，對堆積體10進行加熱的話，第2基板15會軟化。另一方面，第1基板11因尚未到達本身的玻璃轉移點，故不會軟化而保持剛性。所以，僅第2基板15軟化，第2基板15的貼合面15a的形狀，仿照第1基板11的貼合面11a的起伏形狀而變形，堆積體10中的空間S會消失，如圖1(d)所示，第1基板11的貼合面11a與第2基板15的貼合面15a於整面中成為均勻的接觸之狀態。結果，迴避了基板彼此之接合的不良處發生之狀況及兩張基板的接合面挾持氣泡之狀況，在第1基板11及第2基板15之間獲得良好的密接狀態。
然後，藉由第1基板11與第2基板15經過各種化學反應 製程，例如，藉由第1基板11的貼合面11a之終端的OH基與第2基板15的貼合面15a之終端的OH基所致之氫鍵結，或者藉由從其脫水縮合的共有鍵結而接合，因此，獲得第1基板11與第2基板15一體強固地接合的接合體17。
依據以上所述的基板的貼合方法，於變形工程中藉由利用第2基板15的可變形溫度以上，且未滿第1基板11的可變形溫度的溫度進行加熱，僅第2基板15會軟化，所以，可讓第2基板15的貼合面15a追隨第1基板11的貼合面11a的形狀變形，可使接合體17的接合面17a整面確實密接，所以，可在高密接狀態下貼合至少一方基板具有翹曲及貼合面的起伏之第1基板11及第2基板15。
[微晶片的製作方法]
本發明的微晶片的製作方法，係使用上述之基板的貼合方法，獲得內部具有流通媒體之流通路徑的微晶片的方法。
亦即，作為微晶片基板，使用僅於分別由玻璃或樹脂所成，可變形溫度相互不同的第1基板及第2基板中，第1基板及第2基板的至少一方的貼合面，理想為可變形溫度較高一方的基板(於本發明中為第1基板)的貼合面，設置流通路徑形成部分者。
在流通路徑形成部分僅設置於可變形溫度較高一方的基板(於本發明中為第1基板)的貼合面時，因為變形工程中第1基板不會軟化，所以，形成於該第1基板的流通路徑 形成部分不會失去功能或變形，因此，所得之微晶片的流通路徑不會失去功能或產生變形。
圖2係概略揭示本發明之微晶片的製作方法之一例的說明圖，(a-1)係第1基板的俯視圖，(b-1)係A-A線剖面圖，(a-2)係第2基板的俯視圖，(b-2)係B-B線剖面圖，(c)係所得之微晶片的剖面圖。
於本發明的微晶片的製作方法中，具體來說，作為微晶片基板，使用第1微晶片基板21及第2微晶片基板25。第1微晶片基板21係具有含有用以注入例如試藥等之貫通孔的注入口22及含有用以排出試藥等之貫通孔的排出口23，於貼合面21a(圖2(b-1)中上面)，具有連通注入口22的貫通孔及排出口23的貫通孔，且剖面形狀為矩形之溝狀的流通路徑形成部分24。該等注入口22、排出口23及流通路徑形成部分24等的必要構造凹部，可藉由例如機器加工或模具轉印等的公知技術來形成。
於第2微晶片基板25未形成構造凹部，但是，例如於其貼合面25a，形成與第1微晶片基板21的構造凹部對應的構造凹部亦可。
圖2的第1微晶片基板21係僅形成1組成為測定電路部的構造凹部(注入口22、流通路徑形成部分24及排出口23)，但是，藉由使用於1張第1微晶片基板形成成為多數測定電路部的構造凹部者，可製造出可發揮多數功能之大型的微晶片。
微晶片基板21、25的大小，係例如橫縱設為 85mm×128mm，厚度設為例如1~3mm。
舉出第1微晶片基板21之構造凹部的流通路徑形成部分24的尺寸之一例的話，寬度為150μm，深度為150μm，長度為20mm。
貼合第1微晶片基板21及第2微晶片基板25的接合體即微晶片27，係如圖2(c)所示，形成於第1微晶片基板21的流通路徑形成部分24，第2微晶片基板25成為蓋子，藉此密閉，於內部區隔出流通媒體的流通路徑R。
依據如上所述之微晶片的製造方法，因為藉由經變形工程而第2微晶片基板25的貼合面25a追隨第1微晶片基板21的貼合面21a的形狀變形，所以，可使所得之微晶片27的接合面27a整面確實地密接。所以，可在高密接狀態下貼合例如大面積的微晶片基板等之至少一方基板具有翹曲或貼合面的起伏的第1微晶片基板21及第2微晶片基板25，結果，即使是大型的微晶片，也可高信賴性地形成所期望的流通路徑。
以上，已針對本發明的實施形態進行說明，但是，本發明不限定於前述的實施形態，可施加各種變更。
[實施例]
以下，針對本發明之基板的貼合方法的具體實施例進行說明，但是，本發明並不限定於後述實施例。
準備後述之基板A及基板B。
基板A係由環烯烴樹脂(日本Zeon股份有限公司製「Zeonex460R」，可變形溫度：120℃)所成。
基板B係由丙烯酸樹脂(住友化學股份有限公司製「SUMIPEX」，可變形溫度：100℃)所成。
各基板係尺寸為100mm×150mm×2mm的短形之板狀者。
各基板的可變形溫度係相當於個別的玻璃轉移點-10℃者。
<參照例1~7>
作為第1基板及第2基板，使用兩張基板B，進行後述之紫外線照射處理工程及接合工程來貼合該等。於作為第1基板所用的基板B，預先設置複數微少的流通路徑形成部分。流通路徑形成部分係寬度150μm，深度150μm，長度20mm。
[紫外線照射處理工程]
使用氙準分子燈，對兩張基板個別的貼合面，以照度為40mW/cm2，照射時間為20秒鐘的條件，照射真空紫外線。
[接合工程]
將兩張基板B、B，以個別貼合面相互接觸之方式堆積而獲得堆積體(堆積工程)。接下來，藉由對該堆積體， 以加壓力為0.2MPa，加壓時間為300秒鐘，加熱溫度如表1所記載的條件進行加壓，接合兩張基板B、B。
針對如此所得的接合體，以目視進行接合狀況的評估。又，觀察切斷的剖面，確認有無流通路徑的變形。於表1揭示結果。
於參照例1~3中，可成功貼合兩張基板B、B，但是，可確認到無法完全吸收個別具有之貼合面的起伏及翹曲，接合面的一部分產生間隙之狀況。
於加熱到基板B的可變形溫度附近的參照例4、5中，可貼合兩張基板B、B，且貼合面的起伏及翹曲藉由加壓力而變形，貼合面彼此更密接，接合面的間隙被改善許多，但並不完全。
於加熱到基板B的可變形溫度以上的參照例6、7中，可貼合兩張基板B、B，且個別具有之貼合面的起伏及翹曲藉由加壓力而變形，貼合面彼此更密接，接合面並未產生間隙，但是，發生加壓構件所接觸之面的變形及流通路徑變形。
<實施例1、2，比較例1~5>
作為第1基板及第2基板，分別使用基板A及基板B，進行後述之紫外線照射處理工程及接合工程來貼合該等。於作為第1基板所用的基板A，預先設置複數微少的流通路徑形成部分。流通路徑形成部分係寬度150μm，深度150μm，長度20mm。
[紫外線照射處理工程]
使用氙準分子燈，對兩張基板個別的貼合面，以照度為40mW/cm2，照射時間為20秒鐘(對於基板A)或30秒鐘(對於基板B)的條件，照射真空紫外線。
[接合工程]
將兩張基板A、B，以個別貼合面相互接觸之方式堆積而獲得堆積體(堆積工程)。接下來，藉由對該堆積體，以加壓力為0.2MPa，加壓時間為300秒鐘，加熱溫度如表1所記載的條件進行加壓，接合兩張基板A、B。
針對如此所得的接合體，以目視進行接合狀況的評估。又，觀察切斷的剖面，確認有無流通路徑的變形。於表1揭示結果。
於比較例1~3中，可成功貼合兩張基板A、B，但是，可確認到無法完全吸收個別具有之貼合面的起伏及翹曲，接合面的一部分產生間隙之狀況。
於加熱到可變形溫度較低之一方的基板(基板B)的可變形溫度附近的比較例4、5中，可貼合兩張基板A、B，且貼合面的起伏及翹曲藉由加壓力而變形，貼合面彼此更密接，接合面的間隙被改善許多，但並不完全。
於加熱到可變形溫度較低之一方的基板(基板B)的可變形溫度以上的實施例1、2中，可貼合兩張基板A、B，又，個別具有之貼合面的起伏及翹曲藉由加壓力而變形， 貼合面彼此更密接，接合面並未產生間隙，又，也未發生加壓構件所接觸之面的變形及流通路徑變形。
<實施例3、4，比較例6~8>
作為第1基板及第2基板，分別使用基板A及基板B，進行後述之電漿氣體處理工程及接合工程來貼合該等。於作為第1基板所用的基板A，預先設置複數微少的流通路徑形成部分。流通路徑形成部分係寬度150μm，深度150μm，長度20mm。
[電漿氣體處理工程]
藉由將基板A、B分別配置於其貼合面與圖4所示之後述的大氣壓電漿裝置的噴嘴的距離成為3mm的位置，以後述之條件使大氣壓電漿裝置動作，對於基板A、B分別進行電漿氣體處理。
-條件-
‧加工氣體(電漿用氣體)：氮氣(流量=150L/min)及潔淨乾燥空氣(流量=1L/min)
‧投入電力：1100VA，電壓：7.0kVp-p，頻率：60kHz
‧照射時間：4秒鐘(對於基板A)，5秒鐘(對於基板B)
圖4係概略揭示本發明所用之大氣壓電漿裝置的一例之構造的說明用剖面圖。該大氣壓電漿裝置，係具有例如由鋁所成之長方體狀的殼體60。於該殼體60內，水 平配置有電性連接於高頻電源65的板狀之電極61。於該電極61的下面，形成有介電體層62。於此例的大氣壓電漿裝置中，電極61設為高壓側電極，殼體60設為接地側電極。
於殼體60的上面，設置有對殼體60內供給加工氣體的氣體供給口63。又，於殼體60的下面，形成有將於殼體60內藉由大氣壓電漿而電漿化的加工氣體，放出至外部的複數噴嘴64。
電極61的材質係因瓦合金(Super Invar)(藉由熱熔射，於表面形成500μm的由氧化鋁所成之被膜者)，表面的尺寸為50mm×300mm。又，殼體60與介電體層61的間隔距離為0.5mm。
於此種大氣壓電漿裝置中，在大氣壓或其附近的壓力下，加工氣體G1從氣體供給口63被供給至殼體60內。在此狀態下，藉由高頻電源65透過介電體層62對電極61與殼體60之間施加高頻電場的話，在電極61與殼體60之間會產生介電體屏障放電。結果，存在於殼體60與介電體層62之間的加工氣體G1被游離或激發而電漿化。然後，電漿化的加工氣體G2係從殼體60的噴嘴64放出至外部，接觸配置於殼體60的下方之基板(省略圖示)的貼合面。
[接合工程]
將兩張基板A、B，以個別貼合面相互接觸之方式堆積而獲得堆積體(堆積工程)。接下來，藉由對該堆積體，以加壓力為0.2MPa，加壓時間為300秒鐘，加熱溫度如表1 所記載的條件進行加壓，接合兩張基板A、B。
針對如此所得的接合體，以目視進行接合狀況的評估。又，觀察切斷的剖面，確認有無流通路徑的變形。於表1揭示結果。
於比較例6中，可成功貼合兩張基板A、B，但是，可確認到無法完全吸收個別具有之貼合面的起伏及翹曲，接合面的一部分產生間隙之狀況。
於加熱到可變形溫度較低之一方的基板(基板B)的可變形溫度附近的比較例7、8中，可貼合兩張基板A、B，且貼合面的起伏及翹曲藉由加壓力而變形，貼合面彼此更密接，接合面的間隙被改善許多，但並不完全。
於加熱到可變形溫度較低之一方的基板(基板B)的可變形溫度以上的實施例3、4中，可貼合兩張基板A、B，又，個別具有之貼合面的起伏及翹曲藉由加壓力而變形，貼合面彼此更密接，接合面並未產生間隙，又，也未發生加壓構件所接觸之面的變形及流通路徑變形。
根據以上的結果，可確認藉由利用可變形溫度較低之一方的基板的可變形溫度以上的溫度，對堆積體進行加熱，可獲得將兩張基板A、B，在貼合面的起伏及翹曲藉由加壓力而變形，貼合面彼此更密接，接合面未產生間隙之狀態下進行貼合，且也未發生加壓構件所接觸之面的變形及流通路徑變形的接合體。
10‧‧‧堆積體
11‧‧‧第1基板
11a‧‧‧貼合面
15‧‧‧第2基板
15a‧‧‧貼合面
17‧‧‧接合體
17a‧‧‧接合面
19‧‧‧紫外線光源
L‧‧‧真空紫外線
S‧‧‧空間

Claims (6)

  1. 一種基板的貼合方法，係貼合分別由玻璃或樹脂所成之第1基板及第2基板的方法，其特徵為：第1基板，係基板變形的可變形溫度比第2基板的可變形溫度還高的材質；具有：表面活性化工程，係對第1基板的貼合面及第2基板的貼合面分別進行活性化；堆積工程，係將該第1基板與該第2基板以各貼合面接觸之方式堆積；及變形工程，係使前述第2基板的貼合面，追隨前述第1基板的貼合面的形狀變形；前述變形工程，係藉由以第2基板的可變形溫度以上，且未滿第1基板的可變形溫度的溫度，加熱前述堆積工程中所得之第1基板與第2基板的堆積體來進行。
  2. 如申請專利範圍第1項所記載之基板的貼合方法，其中，於前述變形工程中，對被堆積之兩張基板往相互接近的方向進行加壓。
  3. 如申請專利範圍第1項或第2項所記載之基板的貼合方法，其中， 前述表面活性化工程，係對前述第1基板的貼合面及前述第2基板的貼合面分別照射真空紫外線的紫外線照射處理工程。
  4. 如申請專利範圍第1項或第2項所記載之基板的貼合方法，其中，前述表面活性化工程，係使藉由大氣壓電漿而電漿化的加工氣體，接觸前述第1基板的貼合面及前述第2基板的貼合面個別的電漿氣體處理工程。
  5. 一種微晶片的製造方法，其特徵為：於分別由玻璃或樹脂所成的第1基板及第2基板中，於該第1基板及該第2基板的至少一方的貼合面，設置有流通路徑形成部分；藉由利用申請專利範圍第1項至第2項中任一項所記載之基板的貼合方法來貼合前述第1基板及前述第2基板，獲得於內部具有流通媒體之流通路徑的微晶片。
  6. 如申請專利範圍第5項所記載之微晶片的製造方法，其中，前述流通路徑形成部分，係僅設置於前述第1基板的貼合面。
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