TWI753120B - 環烯烴聚合物的接合方法 - Google Patents

環烯烴聚合物的接合方法 Download PDF

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TWI753120B
TWI753120B TW107106619A TW107106619A TWI753120B TW I753120 B TWI753120 B TW I753120B TW 107106619 A TW107106619 A TW 107106619A TW 107106619 A TW107106619 A TW 107106619A TW I753120 B TWI753120 B TW I753120B
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plasma
cop
bonding
cycloolefin polymer
treatment
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TW201842102A (zh
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寺井弘和
舩橋理佐
西宮智靖
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日商莎姆克股份有限公司
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/71—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the composition of the plastics material of the parts to be joined
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Abstract

本發明之環烯烴聚合物(COP)之接合方法係將作為COP之第1材料81與例如COP或者作為玻璃之第2材料82接合之方法，且包含：將至少第1材料81之接合面暴露於H2O電漿之製程；以及將第1材料81之接合面與第2材料之接合面合在一起之製程。根據該方法，則能夠於不施加較大之壓力或溫度，又，不使光學特性變化之狀況下，而將環烯烴聚合物(COP)接合於對象材料。

Description

環烯烴聚合物的接合方法
本發明係關於一種將環烯烴聚合物(COP)接合於對象材料之方法。
作為飽和烴系非晶質塑膠之環烯烴聚合物(COP)具有於可見光區域透明且雙折射較小之優異之光學特性，並且因水引起之膨脹較小，因此，較多用於光學透鏡。又，背景之螢光強度低至與玻璃相匹敵，因此，一般考慮用於螢光檢測系微流路裝置(微流路晶片)。進而，著眼於表示材料內之電能損耗程度之介電損耗正切較小而高頻特性優異的方面，亦期待作為電子材料之應用。
然而，COP係疏水性樹脂，潤濕性或接著性較低，因此，於製造微流路晶片等光學裝置時伴隨困難性。因此，報告有藉由準分子UV光之照射將COP之表面進行改質，以於不使用接著劑之情況下將COP彼此接合(非專利文獻1)。又，亦提出有藉由氧電漿處理將COP之表面進行改質，以於不使用接著劑之情況下將COP與矽(或者玻璃)接合之技術(專利文獻1)。
[先前技術文獻] [專利文獻]
[專利文獻1]日本特開2011-104886號公報
[非專利文獻]
[非專利文獻1]「利用光表面活化之環烯烴聚合物之接合：接合強度評價及對微流路之應用」，谷口義尚等，表面技術Vol.65(2014)No.5 p.234-239
根據如上述般藉由準分子UV光之照射或氧電漿處理將COP之表面改質之方法，僅藉由將經改質之表面合在一起，無法獲得充分之接合強度，因此，必須進而實施加壓或加熱。例如，於藉由準分子UV光之照射將表面進行改質之方法之情形時，需要3.6MPa以上之加壓及70℃以上之加熱，以獲得3N/cm2以上之接合強度(非專利文獻1)。然而，於製造微流路晶片之情形時，會產生因此種加壓或加熱導致流路圖案變形或經親水化之表面變成疏水性之問題。又，為了藉由該方法獲得充分之接合強度，亦較理想為將準分子UV光之照射時間設為3分鐘以上(非專利文獻1)。然而，隨著準分子UV光之照射時間變長，COP之螢光強度會變高，因此於螢光檢測系之微流路晶片之製造中照射3分鐘以上之準分子UV光並不佳。
本發明係為了解決此種問題而成者，其目的在於提供一種於不施加較大之壓力或溫度，又，不使光學特性變化之情況下，將COP接合於對象材料之方法。
為了解決上述問題而成之本發明
係將作為環烯烴聚合物(COP)之第1材料與第2材料接合之方法，其特徵在於包含： 將至少上述第1材料之接合面暴露於H2O電漿之製程；以及將上述第1材料之接合面與上述第2材料之接合面合在一起之製程。
於上述方法中，與COP相接合之對象材料(第2材料)可為COP亦可為COP以外之材料，具體而言，例如，假定COP、玻璃等作為第2材料。
又，於上述方法中，兩材料之各自之接合面較佳為其表面粗糙度成為Ra10nm以下。
又，至少第1材料之接合面所暴露之H2O電漿的功率(即，使H2O電漿產生之高頻電力之功率)較佳為10~400W。若為此種H2O電漿，則不會因暴露於其中而使COP之光學特性變化。
又，此時之電漿之壓力較佳為設為1~200Pa左右。
又，將接合面暴露於電漿之時間較佳為2~600秒。
再者，此處之「H2O電漿」係指H2O之分壓為20%以上之電漿，於電漿氣體中，除H2O以外，亦可含有少量之氧(O2)、氮(N2)、氨(NH3)、氫(H2)、氬(Ar)、氦(He)等其他氣體。
將至少第1材料之接合面暴露於H2O電漿後，將第1材料及第2材料之兩接合面合在一起，藉此，兩材料相接合。此時，幾乎不需對接合面賦予壓力，於0.2g左右之材料之情形時，藉由其自身重量形成充分牢固之接合。
於藉由上述本發明之接合方法將COP彼此接合之情形時(即，於第2材料為COP之情形時)，不僅接合機械牢固，而且於其接合面，兩側之材料亦於光學上一體化，而於光學上不會出現接合面。即，於接合面不會產生光之折射或反射，從而光於接合面直接直進。
又，作為上述本發明之接合方法之一之應用例，可列舉上述微流路晶片。於該情形時，將COP製之下側基板之上表面與形成有流路之COP製之中間基板之下表面、及該中間基板之上表面與COP製之上側基板之下表面， 藉由上述接合方法接合，藉此，能夠製造經牢固地一體化之COP製微流路晶片。
該微流路晶片如上述般不會於接合面即不會於流路以外之部分產生光之折射或反射，因此，流路中之測定對象流體之測定精度提高。
根據本發明之COP之接合方法，能夠於幾乎不對接合面賦予壓力，又，不提高溫度，又，不使COP之光學特性變化之情況下，將COP充分牢固地接合於對象材料。尤其是，於藉由本發明之方法將COP彼此接合之情形時，不僅接合機械牢固，而且於其接合面，兩側之材料亦於光學上一體化。因此，成為適合於將2個以上之零件接合而製成光學裝置之情形時之接合方法。又，於著眼於COP之高頻特性，而將其用作電子零件之材料之情形時，於接合有零件之面，高頻亦不會產生反射或折射，因此，能夠獲得低損耗之電子零件。
100:電漿處理裝置
1:電漿處理室
11:氣體導入口
12:排氣口
2:水導入部
21:水供給源
22:配管
23:閥
24:質量流量控制器
3:排氣部
32:配管
33:閥
34:真空泵
4:供電電極
41:RF電源
42:電容器
5:接地電極
6:控制部
81:第1材料
82:第2材料
91:第1樣品
92:第2樣品
圖1係電漿處理裝置之概略構成圖。
圖2係表示接合方法之流程之圖。
圖3A係處理前之COP材料之表面之分析結果。
圖3B係利用H2O電漿進行處理後之COP材料之表面之分析結果。
圖3C係利用O2電漿進行處理後之COP材料之表面之分析結果。
圖4A係用於評價實驗之樣品之說明圖。
圖4B係接合強度之測定方法之說明圖。
以下，一面參照圖式一面對本發明之適當之實施形態進行說明。
<1.裝置構成>
一面參照圖1一面對實施形態之接合方法中所使用之電漿處理裝置進行說明。於圖1中，表示電漿處理裝置100之概略構成。由該圖可明白，電漿處理裝置100係平行平板型(電容耦合型)電漿處理裝置。
電漿處理裝置100主要具備：電漿處理室1，其於內部形成供配置要進行處理之對象物81、82之處理空間V；水導入部2，其將水(具體而言，作為氣體狀之水之水蒸氣)導入至處理空間V；排氣部3，其對處理空間V進行排氣；一對電極4、5，其等對向配置於處理空間V；及控制部6，其控制該等各部。
於電漿處理室1，設置有：將氣體導入至處理空間V內之氣體導入口11及用以對處理空間V內進行排氣之排氣口12。於氣體導入口11連接有下述配管22。又，於排氣口12連接有下述配管32。
水導入部2具備：一端與氣體導入口11連接且另一端與水供給源21連接之配管22。於配管22之中途，設置有：閥23、自動調整於配管22中流動之氣體之流量的質量流量控制器24、及將導入之流體汽化之(此處，將水汽化而製成水蒸氣)汽化器(汽化裝置)25。該等各部23、24、25與控制部6電性連接，藉由控制部6控制向處理空間V之水蒸氣之導入及停止。
排氣部3具備：一端與排氣口12連接且另一端連接於排氣線路之配管32。於配管32之中途，設置有閥33及真空泵34。該等各部33、34與控制部6電性地連接，藉由控制部6控制自處理空間V內之氣體之排氣。
對於對向配置於電漿處理室1內之一對電極4、5中之一電極4，經由RF電源41及電容器42供給電力(以下，將該電極4稱為「供電電極4 (powered electrode 4)」)。又，另一電極5接地(以下，將該電極5稱為「接地電極5」)。於該構成中，藉由對供電電極4供給RF電力，而使導入至處理空間V內之氣體電漿化。再者，根據該電漿處理裝置100，可自載置於供電電極4上之RIE(Reactive Ion Etching)模式、載置於接地電極5上之PE(Plasma Etching)模式之兩個模式中進行選擇而對要進行處理之對象物81、82進行電漿處理，當實施本發明時，亦可使用任一模式。於圖之例中，例如，例示有以PE模式進行電漿處理之情形。
控制部6控制上述各元件，使其等執行一連串的處理。控制部6可設為以個人電腦為硬體資源，藉由執行該個人電腦中安裝之專用控制、處理軟體，來實現該控制所需之各種功能區塊之構成。
<2.處理之流程>
一面參照圖2一面對實施形態之接合方法進行說明。圖2係表示該接合方法之流程之圖。
製程S1：首先，準備要接合之2個材料(第1材料81及第2材料82)。此處，第1材料81及第2材料82均係由環烯烴聚合物(COP)形成之薄板，例如為分別構成微流路晶片之下側基板、及中間基板(即，形成有流路圖案之基板)之構件。於該情形時，相當於下側基板之上表面、及中間基板之下表面之各面成為各材料81、82之接合面。其中，各材料81、82之接合面之表面粗糙度均設為Ra10nm以下。
製程S2：其次，利用H2O電漿對第1材料81之接合面、及第2材料82之接合面進行處理。
製程S2之處理例如使用上述電漿處理裝置100而進行。於該情形時，首先，經由未圖示之搬入口將第1材料81及第2材料82搬入至電漿處理室1，並將各材料81、82以如其接合面朝上之姿勢載置於接地電極5上(或者，亦 可為供電電極4上)，並利用靜電夾頭等進行固定。
繼而，於處理空間V形成H2O電漿。具體而言，將搬入口關閉而將電漿處理室1密閉後，進行向處理空間V之水蒸氣之導入，與此同時地，進行處理空間V之排氣，將處理空間V維持於1~200Pa之範圍內之特定壓力。繼而，對供電電極4施加10~400W之高頻電力。其中，此處，供電電極4之面積係設為2975cm2。如此一來，則導入至處理空間V內之水蒸氣經電漿化而形成H2O電漿，從而進行暴露於該H2O電漿之各材料81、82之接合面之電漿處理。
利用H2O電漿之處理開始後經過特定時間後，將閥23關閉而停止水蒸氣之供給，並且停止高頻電力之供給，而使處理結束。其中，該特定時間(即，將各材料81、82之接合面暴露於H2O電漿之時間)係設為2~600秒之範圍內之特定時間。
繼而，使處理空間V恢復至大氣壓，並將各材料81、82自電漿處理室1中搬出。其中，亦可不於該時點將各材料81、82自電漿處理室1中搬出，而於電漿處理室1內繼續進行下一製程S3。
製程S3：繼而，將第1材料81之接合面與第2材料82之接合面合在一起。如此，則即便不進行加熱或來自外部之加壓，該等接合面亦於常溫下僅藉由自身重量而相接合。該製程S3較佳為於利用H2O電漿之處理結束後30分鐘以內完成。但是，若預先將該處理後之第1材料81及第2材料82於減壓環境下或者氮氣環境下進行保管，則即便該處理結束後經過2小時以上，亦會同樣地相接合。
藉由以上處理，使第1材料81與第2材料82相接合。即，將微流路晶片中之下側基板與中間基板接合。準備該中間基板(接合有下側基板之中間基板)及上側基板(製程S1)，將該中間基板之上表面及上側基板之下表面分別作為接合面，進行上述製程S2~製程S3之處理，藉此，能夠獲得積層有3 個基板之微流路晶片。
發明人等考察到，藉由利用H2O電漿對由COP形成之材料之接合面進行處理，會產生以下3個反應。
第1，藉由暴露於H2O電漿，接合面中存在之高分子之一部分氧化而脫離(即，表面被蝕刻)。又，接合面中存在之高分子之主鏈被切斷而低分子量化。又，接合面之端之毛邊被去除。藉由該等，接合面平滑化(即，表面粗糙度變小)，而形成容易接合之狀態。惟若此種反應過度進行，則相反地存在表面粗糙度變大之可能性，但藉由縮小H2O電漿之功率(即，對供電電極4施加之電力)(具體而言，400W以下)或者藉由縮短處理時間(具體而言，600秒以下)，而能夠使表面粗糙度不至於變大。
為了驗證該點，發明人等進行了如下實驗：以由COP形成之材料為樣品，於對供電電極4施加之電力及處理時間不同之各處理條件1、2下，對其進行H2O電漿處理，測定該情形時之樣品之表面粗糙度Ra於處理前後如何變化。其中，處理條件1係將對供電電極4施加之電力設為100W、將處理時間設為20秒，處理條件2係將對供電電極4施加之電力設為600W、將處理時間設為200秒。又，表面粗糙度Ra之測定係利用Bruker公司製造之Dektak 3ST Profilometer進行(掃描長度：500μm，強度：20mg)。
於表1中彙總有該實驗之結果。如此處所示，可知，於功率為100W相對較小且處理時間為20秒相對較短之處理條件1下，表面粗糙度與處理前相比無較大變化(即，表面未變粗糙)，相對於此，於功率為600W相對較大且處理時間為200秒相對較長之處理條件2下，表面粗糙度與處理前相比變大(即，表面變粗糙)。
Figure 107106619-A0305-02-0011-1
第2，COP係具有環狀結構(脂環結構)之飽和烴系聚合物，若該環狀結構被破壞，則接合面變粗糙而接合變得困難。又，若環狀結構被破壞，則亦可能產生透明度之下降等光學特性之變化。然而，若降低H2O電漿之功率(具體而言為400W以下)，則可維持環狀結構不被破壞。
第3，一般認為H2O電漿中含有之羥自由基、原子狀氫、及原子狀氧對接合面之界面中存在之高分子之官能基(OH基、COOH基、C=O基等)進行修飾，藉此，使接合面親水化。
為了驗證該點，發明人等進行了如下實驗：觀察利用H2O電漿進行處理之COP材料之表面狀態。具體而言，作為樣品，準備COP，使用Samco公司製造之電漿處理裝置(製品名：AQ-2000)對該樣品之表面實施H2O電漿處理。其中，電漿處理條件係將H2O氣體流量設為20sccm、將高頻電力功率設為100W(供電電極之面積：2975cm2)、將處理時間設為20秒。然後，利用ULVAC公司製造之掃描型X射線光電子能譜分析裝置(產品名：PHI5000VersaProbeII)對H2O電漿處理前後之各樣品之表面進行分析。將所獲得之結果分別表示於圖3A、3B。
又，作為比較實驗，將形成電漿之氣體由水蒸氣變更為氧，利用氧電漿而非H2O電漿對與上述相同之樣品進行處理。氣體種類以外之實驗條件係設為共同。而且，藉由與上述相同之方法，對O2電漿處理後之樣品之表面進行分析。將所獲得之結果表示於圖3C。
又，將圖3A~圖3C之各分析結果中獲得之各官能基之峰高之比率(%)彙總於表2。
如此處所示，自電漿處理前之樣品(COP)表面，僅檢測出脂環結構中含有之-C-C-，相對於此，自H2O電漿處理後之COP表面，檢測出羧基或羰基等官能基，認為藉由該等官能基而使COP之接合面親水化。另一方面，於O2電漿處理後之COP表面亦檢測出與該等相同之官能基，但與H2O電漿處理相比，羰基或羧基之比率較小，因此認為親水化之程度較低。
Figure 107106619-A0305-02-0012-2
藉由以上之3個反應，於不使COP之光學特性變化之情況下，而接合面改質為容易接合之狀態，因此即便不進行加壓、加熱，僅藉由將接合面彼此合在一起，便可形成接合。
<3.變形例>
於上述中，利用H2O電漿對第1材料81及第2材料82之兩者進行處理，但亦可利用H2O電漿僅對一材料進行處理。於該情形時，電漿處理之處理條件亦可設為與上述相同者。
於上述中，第1材料81及第2材料82之兩者由COP形成，但亦可 一材料由COP以外之材料形成，具體而言，例如，第2材料可為如聚醯胺、聚酯、聚胺酯(urethane)、聚矽氧烷、酚樹脂、多硫化物、聚縮醛、聚丙烯腈、聚氯乙烯、聚苯乙烯、聚甲基丙烯酸甲酯、聚乙酸乙烯酯、聚四氟乙烯、聚異戊二烯、聚碳酸酯、聚醚、聚醯亞胺、聚苯并咪唑、聚苯并
Figure 107106619-A0305-02-0013-20
唑、聚苯并噻唑、聚
Figure 107106619-A0305-02-0013-22
二唑、聚三唑、聚喹
Figure 107106619-A0305-02-0013-21
啉、聚咪唑吡咯酮、環氧樹脂、以及包含選自芳香族成分及乙烯基或環丁基中之成分之共聚物之有機物，或者亦可為如玻璃、藍寶石、氧化鋅、氧化銦錫(ITO)之無機物。
於第2材料由COP以外之材料形成之情形時，可利用H2O電漿對COP製之第1材料及COP以外之第2材料之兩者進行處理，亦可利用H2O電漿僅對COP製之第1材料進行處理。針對COP製之第1材料之電漿處理之處理條件較佳為設為與上述相同者。又，針對COP以外之第2材料之電漿處理之處理條件可設為與針對COP製之第1材料之電漿處理之處理條件相同者，亦可設為與其不同者。例如，於第2材料為玻璃之情形時，亦可利用400W以上之功率之H2O電漿對該第2材料進行處理。
又，於上述中，於利用H2O電漿對各材料81、82進行處理時，將水蒸氣導入至處理空間V，但亦可將液體狀(水滴狀)之水、固體狀(水霧狀)之水、或者該等之混合物導入至處理空間V。又，此時，亦可一併進行水蒸氣以外之氣體(例如，氧、氮、空氣、氬、氦、氨、氫等)向處理空間V之導入。其中，於該情形時，較佳為以處理空間V內之混合氣體中之H2O之分壓成為20%以上之方式，調整各氣體之導入流量等。
又，於上述中，於製程S3中不進行加熱或加壓，但並非禁止加壓或加熱，亦可於不會產生形成於第2材料82之流路圖案發生變形或親水化之表面變成疏水性等情況之範圍內，進行加壓或加熱。
又，於上述中，於製程S2之處理(將第1材料81之接合面、及第 2材料82之接合面暴露於H2O電漿之處理)前，亦可進行對各材料81、82之接合面照射紫外線之處理。或者，亦可於進行製程S2之處理期間(即，與該處理並行地)，進行對該接合面照射紫外線之處理。藉由照射紫外線，能夠進一步增大第1材料81與第2材料82之接合強度。
又，於上述中，例示了將構成微流路晶片之基板彼此接合之情形，但上述方法亦可用作於具有COP製之構件(COP製之膜、COP製之板等)作為構成元件的各種構件(例如，有機EL構造體、光學膜、偏光板、液晶顯示支撐體、偏光元件、觸控面板支撐體等)之製造步驟中，將COP製之構件彼此接合或者將COP製之構件與玻璃板接合之方法。
<4.評價實驗>
<4-1.利用氧氣進行之比較實驗>
實驗1：作為第1樣品91及第2樣品92，準備COP製之薄板(長度30mm(L1)、寬度8mm(L2)、厚度1mm、表面粗糙度Ra6.6nm、質量0.24g)(圖4A)。利用H2O電漿對兩個樣品91、92進行處理，將暴露於電漿之側之主面之一部分(長度12.5mm(L3)、寬度8mm(L2)之部分)重疊，不進行加熱及加壓(僅藉由自身重量)，觀察兩樣品91、92是否相接合。其中，H2O電漿之生成條件係設為表3所示者。接合之評價(彎曲接著試驗)係基於JIS K 6856而進行。
比較實驗：於實驗1中，將形成電漿之氣體由水蒸氣變更為氧，利用氧電漿而非H2O電漿對各樣品91、92進行處理。氣體種類以外之實驗條件係設為與實驗1共同。
Figure 107106619-A0305-02-0014-3
於實驗1中，第1樣品91與第2樣品92相接合，但於比較實驗中，未接合。即，藉由利用H2O電漿進行處理而COP彼此相接合，但於利用氧電漿進行處理之情形時未接合。考慮其係藉由氧電漿，於100W之低功率(即，如表面粗糙度不因蝕刻等變大而環狀結構亦不破壞之處理條件)下，無法使高分子之官能基充分地親水化，因此未接合。
<4-2. COP與玻璃板之接合>
實驗2：第1樣品91係直接設為實驗1中所使用之COP製之薄板，僅將第2樣品92a變更為玻璃製之薄板(長度30mm(L1)、寬度8mm(L2)、厚度1mm、表面粗糙度Ra6.6nm、質量0.6g)。除此以外之實驗條件係設為與實驗1共同。
比較實驗：於實驗2中，將形成電漿之氣體由水蒸氣變更為氧，利用氧電漿而非H2O電漿對各樣品91、92a進行處理。除氣體種類以外之實驗條件係設為與實驗2共同。
於實驗2中，第1樣品91與第2樣品92a相接合，但於比較實驗中，未接合。即，藉由利用H2O電漿進行處理，COP與玻璃相接合，但於利用氧電漿進行處理之情形時未接合。
<4-3.電漿之功率>
實驗3：測定於對供電電極4施加之電力之大小(RF功率)為5W、10W、50W、100W、200W、400W、600W之各電漿條件下，利用H2O電漿對與實驗1相同之樣品91、92進行處理之情形時之兩樣品91、92之接合強度。RF功率以外之H2O電漿之生成條件係設為於各情形時共同，均設為與實驗1相同者(表3)，但針對RF功率600W，亦進行對將處理時間改變為200秒之條件之評價。又，接合強度之測定係藉由如圖4B所示之壓入彎曲試驗進行。即，將相接合之第1樣品91及第2樣品92載置於在其寬度方向隔著特定間隔d(=38mm)配置之 一對支撐具上，並對接合面施加負載G。緩慢地增大該負載G，測定接合面剝離(破斷)或者樣品被破壞時之最大負載G(破壞負載)(3點負載彎曲試驗)。表4係彙總實驗3之利用各H2O電漿進行處理之第1樣品91與第2樣品92之接合強度之表。其中，於該表中，接合強度設為「0」係表示未接合。又，該表中之「狀態」之項目表示藉由上述方法測定接合強度時之樣品91、92之狀態，分別地，測定時樣品本身被破壞者係由「◎」表示，測定時於樣品間產生剝離者係由「△」表示，本來未接合者係由「×」表示。
Figure 107106619-A0305-02-0016-18
 *凡例(狀態)×不接合△於界面剝離◎材料被破壞
由表4可知，第1樣品91與第2樣品92於利用RF功率為10~400W之各H2O電漿進行處理之情形時相接合，但於利用RF功率為該等範圍外之各H2O電漿進行處理之情形時未接合。若H2O電漿之功率小於10W，則COP之表面之改質未充分地進行，因此未接合。又，若H2O電漿之功率大於400W，則會導致表面粗糙度因蝕刻等變大或者COP之環狀結構被破壞之反應進行，結果未接合。另一方面，於RF功率為10~400W之情形時形成接合。尤其是，可知於RF功率為50~200W之情形時，可獲得1.2(N/cm2)以上之特高接合強度，又，於測定接合強度時，於產生樣品間之剝離前，樣品本身已被破壞，因此， 獲得強於COP之破壞強度之接著力。
比較實驗：將形成電漿之氣體由水蒸氣變更為氧，於RF功率為10W、100W、400W、600W之各電漿條件下，利用O2電漿對與實驗3相同之樣品91、92進行處理，並藉由與實驗3相同之方法測定各情形時之兩樣品91、92之接合強度。表5係彙總上述比較實驗之利用各O2電漿進行處理之第1樣品91與第2樣品92之接合強度之表。
Figure 107106619-A0305-02-0017-19
 *凡例(狀態)×不接合△於界面剝離◎材料被破壞
由表5可知，於利用O2電漿進行處理之情形時，形成第1樣品91及第2樣品92之接合之RF功率之範圍為10~100W，與H2O電漿之情形時相比較窄。又，亦可知，接合強度亦大概為0.9N/cm2以下，與H2O電漿之情形時相比較弱。又，可知，於形成接合之任一情形時，於測定接合強度時產生樣品間之剝離，因此，僅可獲得弱於COP之破壞強度之接著力。
1‧‧‧電漿處理室
2‧‧‧水導入部
3‧‧‧排氣部
4‧‧‧供電電極
5‧‧‧接地電極
6‧‧‧控制部
11‧‧‧氣體導入口
12‧‧‧排氣口
21‧‧‧水供給源
22‧‧‧配管
23‧‧‧閥
24‧‧‧質量流量控制器
25‧‧‧汽化器
32‧‧‧配管
33‧‧‧閥
34‧‧‧真空泵
41‧‧‧RF電源
42‧‧‧電容器
81‧‧‧第1材料
82‧‧‧第2材料
100‧‧‧電漿處理裝置
V‧‧‧處理空間

Claims (8)

  1. 一種環烯烴聚合物的接合方法，其係將作為環烯烴聚合物之第1材料與第2材料接合之方法，且包含：將至少上述第1材料之接合面暴露於H2O電漿之製程；以及將上述第1材料之接合面與上述第2材料之接合面於上下方向合在一起之製程。
  2. 如申請專利範圍第1項之環烯烴聚合物的接合方法，其中，上述第1材料之接合面及上述第2材料之接合面之表面粗糙度均為Ra10nm以下。
  3. 如申請專利範圍第1項之環烯烴聚合物的接合方法，其中，上述暴露於H2O電漿之製程中之電漿的壓力為1~200Pa。
  4. 如申請專利範圍第1項之環烯烴聚合物的接合方法，其中，於上述暴露於H2O電漿之製程中，將接合面暴露於電漿之時間為2~600秒。
  5. 如申請專利範圍第1項之環烯烴聚合物的接合方法，其中，上述H2O電漿中之H2O之分壓為20%以上。
  6. 如申請專利範圍第1項之環烯烴聚合物的接合方法，其中，使上述H2O電漿產生之高頻電力之功率為10~400W。
  7. 如申請專利範圍第1至6項中任一項之環烯烴聚合物的接合方法，其中，上述第2材料為環烯烴聚合物或玻璃。
  8. 一種環烯烴聚合物製微流路晶片之製造方法，其包含申請專利範圍第1至7項中任一項之環烯烴聚合物的接合方法，且包含：將環烯烴聚合物製之下側基板之上表面、及形成有流路之環烯烴聚合物製 之中間基板之下表面中的至少一者暴露於H2O電漿之製程；將上述下側基板之上表面與上述中間基板之下表面合在一起之製程；將上述中間基板之上表面、及環烯烴聚合物製之上側基板之下表面中之至少一者暴露於H2O電漿之製程；以及將上述中間基板之上表面與上述上側基板之下表面合在一起之製程。
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