JPWO2018159257A1 - シクロオレフィンポリマーの接合方法 - Google Patents
シクロオレフィンポリマーの接合方法 Download PDFInfo
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- JPWO2018159257A1 JPWO2018159257A1 JP2019502842A JP2019502842A JPWO2018159257A1 JP WO2018159257 A1 JPWO2018159257 A1 JP WO2018159257A1 JP 2019502842 A JP2019502842 A JP 2019502842A JP 2019502842 A JP2019502842 A JP 2019502842A JP WO2018159257 A1 JPWO2018159257 A1 JP WO2018159257A1
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- B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
- B29C66/71—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the composition of the plastics material of the parts to be joined
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- B29C65/002—Joining methods not otherwise provided for
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- B29C66/05—Particular design of joint configurations
- B29C66/10—Particular design of joint configurations particular design of the joint cross-sections
- B29C66/11—Joint cross-sections comprising a single joint-segment, i.e. one of the parts to be joined comprising a single joint-segment in the joint cross-section
- B29C66/112—Single lapped joints
- B29C66/1122—Single lap to lap joints, i.e. overlap joints
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Abstract
Description
シクロオレフィンポリマー(COP)である第1材料と、第2材料を接合する方法であって、
少なくとも前記第1材料の接合面をH2Oプラズマに曝すステップと、
前記第1材料の接合面と前記第2材料の接合面を合わせるステップと、
を含むことを特徴とする。
また、上記の方法において、両材料のそれぞれの接合面は、その表面粗さがRa10nm以下となっていることが好ましい。
また、少なくとも第1材料の接合面が曝されるH2Oプラズマのパワー(すなわち、H2Oプラズマを発生させる高周波電力のパワー)が、10〜400Wであることが好ましい。このようなH2Oプラズマであれば、これに曝されることによってCOPの光学特性が変化することがない。
また、このときのプラズマの圧力は、1〜200Pa程度とするのが好ましい。
また、接合面をプラズマに曝す時間は、2〜600秒であることが好ましい。
なお、ここにおける「H2Oプラズマ」とは、H2Oの分圧が20%以上のプラズマのことをいい、プラズマガス中にH2O以外に酸素(O2)、窒素(N2)、アンモニア(NH3)、水素(H2)、アルゴン(Ar)、ヘリウム(He)、等のその他のガスが少量含まれていてもよい。
実施形態に係る接合方法において用いられるプラズマ処理装置について、図1を参照しながら説明する。図1には、プラズマ処理装置100の概略構成が示されている。この図から明らかなように、プラズマ処理装置100は、平行平板型(容量結合型)プラズマ処理装置である。
実施形態に係る接合方法について、図2を参照しながら説明する。図2は、該接合方法の流れを示す図である。
図3には該実験の結果がまとめられている。ここに示されるように、パワーが100Wと比較的小さく且つ処理時間が20秒と比較的短い処理条件1においては、表面粗さが処理前に比べて大きく変化していない(すなわち、表面が荒れていない)のに対し、パワーが600Wと比較的大きく且つ処理時間が200秒と比較的長い処理条件2においては、表面粗さが処理前に比べて大きくなっている(すなわち、表面が荒れた)ことがわかる。
また、比較実験として、プラズマを形成するガスを水蒸気から酸素に変更して、上記と同じサンプルをH2Oプラズマではなく酸素プラズマで処理した。ガスの種類以外の実験条件は共通とした。そして、上記と同様の方法で、O2プラズマ処理後のサンプルの表面を分析した。得られた結果が、図4Cに示されている。
また、図4A〜図4Cの各分析結果において得られた各官能基のピーク高さの割合(%)が、図5の表にまとめられている。
ここに示されるように、プラズマ処理前のサンプル(COP)表面からは、脂環構造に含まれる-C-C-のみが検出されたのに対し、H2Oプラズマ処理後のCOP表面からは、カルボキシ基やカルボニル基などの官能基が検出され、これらの官能基によりCOPの接合面が親水化されていると考えられる。一方、O2プラズマ処理後のCOP表面にもこれらと同様の官能基が検出されているが、H2Oプラズマ処理に比べてカルボニル基やカルボキシル基の割合が少ないため、親水化の程度が低いと考えられる。
上記においては、第1材料81及び第2材料82の両方をH2Oプラズマで処理するものとしたが、一方の材料だけをH2Oプラズマで処理してもよい。この場合も、プラズマ処理の処理条件は、上記と同様のものとすることができる。
<4−1.酸素ガスによる比較実験>
実験1:第1サンプル91及び第2サンプル92として、COP製の薄板(長さ30mm(L1)、幅8mm(L2)、厚さ1mm、表面粗さRa6.6nm、質量0.24g)を準備した(図6A)。両方のサンプル91,92をH2Oプラズマで処理し、プラズマに曝された側の主面の一部分(長さ12.5mm(L3)、幅8mm(L2)の部分)を重ね合わせて、加熱及び加圧をせずに(自重のみで)、両サンプル91,92が接合されるか否かを観察した。ただし、H2Oプラズマの生成条件は、図7に示されるものとした。接合の評価(曲げ接着試験)はJIS K 6856に基づいて行った。
比較実験:実験1において、プラズマを形成するガスを水蒸気から酸素に変更して、各サンプル91,92をH2Oプラズマではなく酸素プラズマで処理した。ガスの種類以外の実験条件は実験1と共通とした。
実験2:第1サンプル91は、実験1で用いたCOP製の薄板のままとして、第2サンプル92aだけを、ガラス製の薄板(長さ30mm(L1)、幅8mm(L2)、厚さ1mm、表面粗さRa6.6nm、質量0.6g)に変更した。それ以外の実験条件は実験1と共通とした。
実験3:パワード電極4に印加する電力の大きさ(RFパワー)が、5W、10W、50W、100W、200W、400W、600Wである各プラズマ条件で、実験1と同様のサンプル91,92をH2Oプラズマで処理した場合の、両サンプル91,92の接合強度を測定した。RFパワー以外のH2Oプラズマの生成条件は各場合で共通とし、いずれも実験1と同じもの(図7)としたが、RFパワー600Wについては、処理時間を200秒に変えた条件についての評価も行った。また、接合強度の測定は、図6Bに示すような押し込み曲げ試験により行った。すなわち、接合された第1サンプル91及び第2サンプル92を、その幅方向に所定の間隔d(=38mm)をあけて配置された一対の支持具上に載置し、接合面に荷重Gを加えた。この荷重Gを徐々に大きくして、接合面が剥離(破断)する、あるいは、サンプルが破壊される際の最大荷重G(破壊荷重)を測定した(3点荷重曲げ試験)。図8には、実験3の各H2Oプラズマで処理された第1サンプル91と第2サンプル92の接合強度をまとめた表が示されている。ただし、この表において、接合強度が「0」とされているところは、接合されなかったことを表している。また、この表における「状態」の項目は、上記の方法で接合強度を測定した際のサンプル91,92の状態を示しており、測定時にサンプル自体が破壊されたものが「◎」で、測定時にサンプル間で剥離が生じたものが「△」で、そもそも接合されなかったものが「×」で、それぞれ示されている。
1…プラズマ処理室
11…ガス導入口
12…排気口
2…水導入部
21…水供給源
22…配管
23…バルブ
24…マスフローコントローラ
3…排気部
32…配管
33…バルブ
34…真空ポンプ
4…パワード電極
41…RF電源
42…コンデンサ
5…接地電極
6…制御部
81…第1材料
82…第2材料
91…第1サンプル
92…第2サンプル
Claims (8)
- シクロオレフィンポリマーである第1材料と、第2材料を接合する方法であって、
少なくとも前記第1材料の接合面をH2Oプラズマに曝すステップと、
前記第1材料の接合面と前記第2材料の接合面を合わせるステップと、
を含むシクロオレフィンポリマーの接合方法。 - 前記第1材料の接合面及び前記第2材料の接合面の表面粗さが共にRa10nm以下である、
請求項1に記載のシクロオレフィンポリマーの接合方法。 - 前記H2Oプラズマに曝すステップにおけるプラズマの圧力が1〜200Paである、
請求項1又は2に記載のシクロオレフィンポリマーの接合方法。 - 前記H2Oプラズマに曝すステップにおいて接合面をプラズマに曝す時間が2〜600秒である、
請求項1〜3のいずれかに記載のシクロオレフィンポリマーの接合方法。 - 前記H2OプラズマにおけるH2Oの分圧が20%以上である、
請求項1〜4のいずれかに記載のシクロオレフィンポリマーの接合方法。 - 前記H2Oプラズマを発生させる高周波電力のパワーが10〜400Wである、請求項1〜5のいずれかに記載のシクロオレフィンポリマーの接合方法。
- 前記第2材料がシクロオレフィンポリマーまたはガラスである、請求項1〜6のいずれかに記載のシクロオレフィンポリマーの接合方法。
- シクロオレフィンポリマー製の下側基板の上面、及び、流路が形成されたシクロオレフィンポリマー製の中間基板の下面のうちの少なくとも一方を、H2Oプラズマに曝すステップと、
前記下側基板の上面と前記中間基板の下面を合わせるステップと、
前記中間基板の上面、及び、シクロオレフィンポリマー製の上側基板の下面のうちの少なくとも一方を、H2Oプラズマに曝すステップと、
前記中間基板の上面と前記上側基板の下面を合わせるステップと、
を含むシクロオレフィンポリマー製マイクロ流路チップの製造方法。
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