CN109476087A - 基板的贴合方法及微芯片的制造方法 - Google Patents
基板的贴合方法及微芯片的制造方法 Download PDFInfo
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- CN109476087A CN109476087A CN201780043854.XA CN201780043854A CN109476087A CN 109476087 A CN109476087 A CN 109476087A CN 201780043854 A CN201780043854 A CN 201780043854A CN 109476087 A CN109476087 A CN 109476087A
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Abstract
本发明的课题在于提供一种能够以较高的密合状态贴合在至少一方的基板具有翘曲、贴合面的起伏的两片基板的基板的贴合方法及微芯片的制作方法。在本发明的基板的贴合方法中,第一基板为基板变形的可变形温度比第二基板的可变形温度高的材质的基板,具有:表面活性化工序,使第一基板的贴合面以及第二基板的贴合面的各个活性化;堆叠工序,将该第一基板与该第二基板以各自的贴合面接触的方式堆叠;以及变形工序,使第二基板的贴合面按照第一基板的贴合面的形状变形,变形工序通过以第二基板的可变形温度以上、且低于第一基板的可变形温度的温度对在堆叠工序中所得的第一基板与第二基板的堆叠体进行加热而进行。
Description
技术领域
本发明涉及两张基板的贴合方法及微芯片的制造方法。
背景技术
在生物化学领域中,使用微型反应器进行微量试剂的分离、合成、提取或分析等的方法正受到关注。该微型反应器例如由通过半导体微细加工技术在由硅、硅酮树脂或玻璃等构成的较小的基板上形成了微米刻度的分析用通道等的微芯片构成。
使用了这样的微型反应器的反应分析系统被称为微型全分析系统(以下,称为“μTAS”)。根据该μTAS,由于试剂的表面积相对于体积的比变大等,能够进行高速且高精度的反应分析,并且能够实现紧凑且自动化的系统。
在微芯片中,通过在被称为微通道的流路设置配置有试剂的反应区域等、具有各种功能的功能区域,能够构成适于各种用途的微芯片。作为微芯片的用途,可列举出基因分析、临床诊断、药物筛选等化学、生物化学、药学、医学、兽医学的领域中的分析、或化合物的合成、环境测量等。
这样的微芯片典型的是一对微芯片基板相向地粘接而成,在其至少一方的微芯片基板的表面形成有例如宽度10~几100μm、深度10~几100μm左右的微细的流路。作为微芯片基板,由于制造容易、还能够进行光学检测,因此主要使用玻璃基板。另外,最近正在进行使用了轻量、且与玻璃基板相比不易破损、并且廉价的合成树脂基板的微芯片的开发。
在微芯片的制造中,作为将两片微芯片基板贴合的方法,可考虑通过粘接剂粘接的方法、基于热熔接的方法等。
然而,在这些的方法中存在如下的问题。即,在通过粘接剂贴合的方法中存在产生如下问题的隐患:粘接剂渗出到微小流路进而流路闭塞;微小流路的一部分变窄进而流路的直径变得不均匀;还有流路的壁面中的均一的特性中产生紊乱。另外,在通过热熔接贴合的方法中存在如下问题:若在加热熔融温度以上进行熔接,则在加热阶段流路被压溃、或者流路无法保持为规定的截面形状,因此微芯片的高功能化变得困难。
因此,提出了如下方法:对两片基板中的贴合面的各个照射真空紫外线、或在大气压或其附近下将处理气体等离子体化,使该等离子体化后的处理气体与基板的表面接触,从而使该各基板的贴合面活性化,并将两片基板以各自的贴合面彼此接触的方式堆叠接合(例如参照专利文献1~专利文献5)。
另外,还提出了如下方法:使结合膜夹在两片基板之间,通过对该结合膜照射紫外线使该结合膜显现粘接性,由此,将两片基板接合(例如参照专利文献6)。
现有技术文献
专利文献
专利文献1:日本特许第3714338号公报
专利文献2:日本特开2006-187730号公报
专利文献3:日本特开2008-19348号公报
专利文献4:国际公开第2008/087800A1号
专利文献5:日本特许第5152361号公报
专利文献6:日本特开2009-197169号公报
发明内容
发明要解决的课题
近年来,研究了能够应对多个检查体的同时测量、测量法不同的多个测量这类多样的测量的微芯片。
为了实现这样的微芯片,需要在一片微芯片中组装多个测量检测部、在测量检测部中构建与多个测量法对应的多样的测量结构等。因而,必然导致一片微芯片大型化。
大型的微芯片例如纵横设为85mm×128mm左右,构成该微芯片的两张微芯片基板的厚度分别例如为几mm以上。
然而,在大型化的微芯片中会产生如下的问题。
如上述那样,微芯片典型的是具有一对(两张)微芯片基板相向地接合而成的构造。而且,在大型的微芯片中,一对微芯片基板自身当然也变大。伴随于此,各个微芯片基板不可避免地具有的贴合面的起伏(日文:うねり)、微芯片基板自身的翘曲等对一对微芯片基板彼此的接合状态造成的影响也变大。
即,由于微芯片基板的贴合面的起伏、微芯片基板自身的翘曲,在堆叠一对微芯片基板彼此时,也会产生贴合面的整个面不密合的情况。
图3是概略地表示以往的微芯片的制作方法的一个例子的说明图。
若具体的地说明微芯片的制作方法,首先,对第一微芯片基板51的贴合面51a以及第二微芯片基板55的贴合面55a的各个照射从紫外线光源59放射的真空紫外线L(图3(a-1)以及(a-2))。在此,设为在第一微芯片基板51的贴合面51a产生了起伏(在图3中以虚线包围的部分)。
接下来,以第一微芯片基板51的贴合面51a以及第二微芯片基板55贴合面55a接触的方式将第一微芯片基板51以及第二微芯片基板55堆叠。在得到的堆叠体50中,在第一微芯片基板51的贴合面51a所涉及的具有起伏的部分形成有微小的空间S(图3(b))。
进一步,对该堆叠体50进行加压及加热(图3(c))。通过这样进行加压及加热,得到接合体57。在接合体57中,有时上述的空间S消失,第一微芯片基板51与第二微芯片基板55的贴合面51a、55a彼此的整个面密合而良好地接合,但如图3(d)所示那样上述的空间S未被消失而作为接合的不良部位残留的情况也较多。
这样,并不限于微芯片基板,贴合的基板越大,越容易产生因基板的贴合面的起伏、基板自身的翘曲而产生基板彼此的接合的不良部位、在两片基板的接合面夹有气泡等之类的问题。
另外,在以存在基板的贴合面的起伏、基板自身的翘曲的状态将两片基板贴合的情况下,也可能产生如下问题:由上述的起伏、翘曲导致在接合体的一部分产生应力集中,有时最初已接合的基板的至少一部分的区域因该应力集中而剥离。
另外,在接合体中接合面存在气泡情况下,这有时会成为进行光学测量时的噪声的原因。
由于以上那样的问题点,现状是难以制造相对较大的尺寸微芯片,只能制造例如载玻片左右大小的小型的微芯片。因此,难以在一片微芯片中组装多个测量检测部、在测量检测部中构建与多个测量法对应的多样的测量构造。
另外,在微芯片基板的厚度薄至例如10μm左右等的情况下,由于该微芯片基板的可挠性变高,因此能够使两张微芯片基板的接合面的密合性提高,但在制作大型的微芯片的情况下,由于各个微芯片基板的厚度为几mm以上,因此难以选择这样的方法。
本发明是基于以上那样的情况而作出的,其目的在于提供一种能够以较高的密合状态贴合在至少一方的基板具有翘曲、贴合面的起伏的两片基板的基板的贴合方法及微芯片的制作方法。
用于解决课题的手段
本发明的基板的贴合方法是将分别由玻璃或树脂构成的第一基板以及第二基板贴合,其特征在于,
第一基板为基板变形的可变形温度比第二基板的可变形温度高的材质的基板,
所述基板的贴合方法具有:
表面活性化工序,使第一基板的贴合面以及第二基板的贴合面的各个活性化;
堆叠工序,将该第一基板与该第二基板以各自的贴合面接触的方式堆叠;以及
变形工序,使所述第二基板的贴合面按照所述第一基板的贴合面的形状变形,
所述变形工序通过以第二基板的可变形温度以上、且低于第一基板的可变形温度的温度对在所述堆叠工序中所得的第一基板与第二基板的堆叠体进行加热而进行。
在本发明的基板的贴合方法中,优选的是在,所述变形工序中将堆叠后的两张基板向相互接近的方向加压。
在本发明的基板的贴合方法中,能够设为如下构成:所述表面活性化工序是对所述第一基板的贴合面以及所述第二基板的贴合面的各个照射真空紫外线的紫外线照射处理工序。
在本发明的基板的贴合方法中,能够设为如下构成:所述表面活性化工序是使通过大气压等离子体而等离子体化的处理气体与所述第一基板的贴合面以及所述第二基板的贴合面的各个接触的等离子气体处理工序。
本发明的微芯片的制造方法,其特征在于,在分别由玻璃或树脂构成的第一基板以及第二基板中,在该第一基板以及该第二基板的至少一方的贴合面设置有流路形成部分,
利用上述的基板的贴合方法将所述第一基板以及所述第二基板贴合,从而得到在内部具有供介质流动的流路的微芯片。
在本发明的微芯片的制造方法中,优选的是,所述流路形成部分仅设置于所述第一基板的贴合面。
发明效果
根据本发明的基板的贴合方法,由于在变形工序中以第二基板的可变形温度以上、且低于第一基板的可变形温度的温度进行加热使得仅第二基板软化,因此能够使第二基板的贴合面按照第一基板的贴合面的形状变形而能够使接合体的接合面的整个面可靠地密合,因而能够以较高的密合状态贴合在至少一方的基板具有翘曲、贴合面的起伏的第一基板以及第二基板。
另外,根据本发明的微芯片的制作方法,由于经过变形工序使得第二基板的贴合面按照第一基板的贴合面的形状变形,因此能够使得到的微芯片的接合面的整个面可靠地密合。因而,能够以较高的密合状态贴合例如大面积的微芯片基板等、在至少一方的基板具有翘曲、贴合面的起伏的第一基板以及第二基板,其结果,即使是大型的微芯片也能够以较高的可靠性形成所希望的流路。
附图说明
图1是概略地表示本发明的基板的贴合方法的一个例子的说明图。
图2是概略地表示本发明的微芯片的制作方法的一个例子的说明图。
图3是概略地表示以往的微芯片的制作方法的一个例子的说明图。
图4是概略地表示本发明中所使用的大气压等离子体装置的一个例子中的结构的说明用剖面图。
具体实施方式
以下,对本发明的实施方式进行说明。
〔基板的贴合方法〕
图1是概略地表示本发明的基板的贴合方法的一个例子的说明图。
本发明的基板的贴合方法具有:表面活性化工序,使第一基板11的贴合面11a以及第二基板15的贴合面15a的各个活性化(图1(a-1)及(a-2));堆叠工序,将该第一基板11与该第二基板15以各自的贴合面11a、15a接触的方式堆叠(图1(b));以及变形工序,使第二基板15的贴合面15a按照第一基板11的贴合面11a的形状变形(图1(c))。
〔基板〕
应用于本发明第一基板11以及第二基板15分别由选自玻璃以及合成树脂所构成的组中的材料构成。
作为构成基板11、15的合成树脂,能够使用硅酮树脂、环烯烃树脂(环烯烃聚合物(COP)、环烯烃共聚物(COC)等)、丙烯酸树脂等。例如在基板11、15为微芯片基板的情况下,优选的是使用透光性优异的材料,作为透光性优异的树脂,例如能够使用丙烯酸树脂或环烯烃树脂。
作为构成基板11、15的玻璃,能够使用石英玻璃、碱玻璃、硼硅酸玻璃等。
在本发明中,基板的可变形温度是指该基板变形的温度,具体而言是指比构成该基板的材料的玻璃化转变温度(Tg)稍低的(Tg-10)℃。该基板的可变形温度有时会因注射成型时的树脂投入量、保压以及温度下降速率而产生些许变化。
第一基板11以及第二基板15为第一基板11的可变形温度比第二基板15的可变形温度高的材质。
即,若将第一基板11的玻璃化转变温度设为Tg1、将第二基板15的玻璃化转变温度设为Tg2,则第一基板11以及第二基板15的可变形温度满足关系式:(Tg1-10)>(Tg2-10)。
第一基板11以及第二基板15的大小例如纵横设为85mm×128mm、厚度分别设为1~3mm。
根据本发明的基板的贴合方法,如以下详细说明那样,即使是厚度为例如1~3mm厚的基板,也能够使接合体17的接合面17a的整个面有效地密合,该接合体17的接合面17a是能够使第二基板15的贴合面15a按照第一基板11的贴合面11a的形状变形而得到的。
[表面活性化工序]
表面活性化工序优选的是,对第一基板11的贴合面11a以及第二基板15的贴合面15a的各个照射真空紫外线L的紫外线照射处理工序、或者使通过大气压等离子体而等离子体化的处理气体与第一基板的贴合面以及第二基板的贴合面的各个接触的等离子气体处理工序。在图1中,设为进行紫外线照射处理工序。
(1)紫外线照射处理工序
在选择紫外线照射处理工序作为表面活性化工序的情况下,从紫外线光源19对基板11、15中的贴合面11a、15a照射波长200nm以下的真空紫外线L。
作为紫外线光源19,例如能够优选地使用在波长172nm具有亮线的氙准分子灯等准分子灯、在波长185nm具有亮线的低压水银灯、在波长120~200nm的范围内具有亮线的重氢灯。
对基板11、15的贴合面11a、15a照射的真空紫外线L的照度例如为10~100mW/cm2。
另外,针对基板11、15的贴合面11a、15a的真空紫外线L的照射时间根据构成基板11、15的材料适当设定,但例如优选的是5秒以上,更优选的是10~60秒。
(2)等离子气体处理工序
在选择等离子气体处理工序作为表面活性化工序的情况下,使通过大气压等离子体而等离子体化的处理气体与基板的贴合面接触。
作为处理气体,优选的是使用以氮气、氩气等为主要成分、且含有氧气为0.01~5体积%而成的处理气体。或者,也可以使用氮气与洁净干燥空气(CDA)的混合气体。
另外,基于等离子气体处理的处理时间例如为5~100秒。
通过这样进行针对基板的表面活性化处理,使得基板11、15中的贴合面11a、15a成为适于接合的状态、即成为末端被羟基(OH基)、羧基(COOH基)置换了的状态。
[堆叠工序]
在堆叠工序中,如图1(b)所示那样,在室温环境下,将第一基板11以及第二基板15在第一基板11的贴合面11a与第二基板15的贴合面15a相互接触的状态下堆叠。
经过该堆叠工序,从而可得到第一基板11与第二基板15堆叠的状态的堆叠体10。
在此,设为在第一基板11的贴合面11a产生了起伏(在图1中以虚线包围的部分)。因而,在得到的堆叠体10中,在具有第一基板11的贴合面11a的起伏的部分形成空间S。
另外,在图1的例中,虽然设为在第二基板15并未产生起伏,但即使在第二基板15也产生起伏、翘曲,也可得到本发明的效果。
[变形工序]
在变形工序中,通过对堆叠工序中所得的堆叠体10进行加热,能够使第二基板15的贴合面15a按照第一基板11的贴合面11a的形状变形。
<加热条件>
加热温度为第二基板15的可变形温度以上、且低于第一基板11的可变形温度的温度,加热时间例如为60~300秒。
在该变形工序中,优选的是在加热的同时和/或加热前后,将堆叠体10的两片基板11、15向相互接近的方向加压。在图1(c)中,为了方便,以空心箭头表示对堆叠体10作用的加压力。
对堆叠体10的加压例如可以在恒定的加压条件下进行,也可以适当调整处理条件而分为多个阶段例如二个阶段来进行。
加压条件能够根据构成基板的材料、加热温度适当设定。
若列举具体的加压条件,则加压力例如为0.1~5MPa,加压时间例如为60~300秒。另外,在将针对基板的加压处理分为例如二个阶段来进行的情况下,第二次的加压处理中的加压力能够在上述数值范围内设定为比第一次的加压处理中的加压力小。另外,第二次的加压处理中的加压时间能够在上述数值范围内设定为比第一次的加压处理中的加压时间长。
在该变形工序中,如以下那样第二基板15变形。即,若以第二基板15的可变形温度以上、且低于第一基板11的可变形温度的温度对堆叠体10进行加热,则第二基板15软化。另一方面,由于第一基板11未到达自身的玻璃化转变温度,因此不会软化,保持了刚性。因而,仅第二基板15软化,第二基板15的贴合面15a的形状效仿第一基板11的贴合面11a的起伏的形状而变形,堆叠体10中的空间S消失,如图1(d)所示那样,成为第一基板11的贴合面11a与第二基板15的贴合面15a在整个面上均匀地接触的状态。其结果,可避免产生基板彼此的接合的不良部位、在两片基板的接合面夹有气泡等,在第一基板11以及第二基板15间得到良好的密合状态。
而且,第一基板11与第二基板15经过各种化学反应处理,从而例如通过基于第一基板11的贴合面11a的终端的OH基与第二基板15的贴合面15a的终端的OH基的氢键而接合,或者通过从其脱水缩合而成的共价键而接合,由此,得到第一基板11与第二基板15一体且牢固地接合的接合体17。
根据以上那样的基板的贴合方法,由于在变形工序中以第二基板15的可变形温度以上、且低于第一基板11的可变形温度的温度进行加热使得仅第二基板15软化,因此能够使第二基板15的贴合面15a按照第一基板11的贴合面11a的形状变形而能够使接合体17的接合面17a的整个面可靠地密合,因而能够以较高的密合状态贴合在至少一方的基板具有翘曲、贴合面的起伏的第一基板11以及第二基板15。
〔微芯片的制作方法〕
本发明的微芯片的制作方法是使用上述的基板的贴合方法而得到在内部具有供介质流动的流路的微芯片的方法。
即,在分别由玻璃或树脂构成、且彼此可变形温度不同的第一基板以及第二基板中,将仅在第一基板以及第二基板的至少一方的贴合面、优选的是可变形温度较高的基板(本发明中为第一基板)的贴合面设置有流路形成部分的基板用作微芯片基板。
在流路形成部分仅设置在可变形温度较高的基板(本发明中为第一基板)的贴合面的情况下,由于在变形工序中第一基板不软化,因此形成于该第一基板的流路形成部分不会被压溃、变形,因而得到的微芯片中的流路不会产生压溃、变形。
图2是概略地表示本发明的微芯片的制作方法的一个例子的说明图,(a-1)是第一基板的俯视图,(b-1)是A-A线剖面图,(a-2)是第二基板的俯视图,(b-2)是B-B线剖面图,(c)是得到的微芯片的剖面图。
在本发明的微芯片的制作方法中,具体而言,作为微芯片基板使用第一微芯片基板21以及第二微芯片基板25。第一微芯片基板21例如具有有着用于注入试剂等的贯通孔的注入口22以及有着用于排出试剂等的贯通孔的排出口23,在贴合面21a(图2(a-2)中的上表面)具有连通注入口22的贯通孔以及排出口23的贯通孔的、截面形状为矩形的槽状的流路形成部分24。这些注入口22、排出口23以及流路形成部分24等所需的构造凹部例如能够通过机械加工、模具转印等公知技术形成。
虽然在第二微芯片基板25未形成构造凹部,但例如也可以在其贴合面25a形成与第一微芯片基板21的构造凹部对应的构造凹部。
图2的第一微芯片基板21是仅形成有一组成为测量电路部的构造凹部(注入口22、流路形成部分24以及排出口23)的基板,但通过使用在一张第一微芯片基板形成有成为多个测量电路部的多个构造凹部的基板,能够制造可以发挥多个功能的大型的微芯片。
微芯片基板21、25的大小例如纵横设为85mm×128mm,厚度例如设为1~3mm。
若列举出第一微芯片基板21的构造凹部的流路形成部分24的尺寸的一个例子,则宽度为150μm,深度为150μm,长度为20mm。
第一微芯片基板21以及第二微芯片基板25贴合而成的接合体即微芯片27如图2(c)所示那样,第二微芯片基板25成为盖,形成于第一微芯片基板21的流路形成部分24由此而密闭,并在内部划分出供介质流动的流路R。
根据以上那样的微芯片的制造方法,由于经过变形工序使得第二微芯片基板25的贴合面25a按照第一微芯片基板21的贴合面21a的形状变形,因此能够使得到的微芯片27的接合面27a的整个面可靠地密合。因而,能够以较高的密合状态贴合例如大面积的微芯片基板等、在至少一方的基板具有翘曲、贴合面的起伏的第一微芯片基板21以及第二微芯片基板25,其结果,即使是大型的微芯片也能够以较高的可靠性形成所希望的流路。
以上,对本发明的实施方式进行了说明,但本发明并不限于上述的实施方式,能够施加各种变更。
实施例
以下,对本发明的基板的贴合方法的具体的实施例进行说明,但本发明并不限于下述的实施例。
准备了下述的基板A以及基板B。
基板A由环烯烃树脂(日本瑞翁株式会社制“ZEONEX460R”,可变形温度:120℃)构成。
基板B由丙烯酸树脂(住友化学株式会社制“SUMIPEX”,可变形温度:100℃)构成。
各基板是尺寸为100mm×150mm×2mm的短形的板状的基板。
各基板的可变形温度相当于各自的玻璃化转变温度-10℃。
<参照例1~7>
将两片基板B用作第一基板以及第二基板,并进行下述的紫外线照射处理工序以及接合工序将它们贴合。在用作第一基板的基板B预先设置了多个微小的流路形成部分。流路形成部分为宽度150μm、深度150μm、长度20mm。
[紫外线照射处理工序]
使用氙准分子灯,在照度为40mW/cm2、照射时间为20秒的条件下,对两片基板各自的贴合面照射了真空紫外线。
[接合工序]
将两片基板B、B以各自的贴合面相互接触的方式堆叠而得到堆叠体(堆叠工序)。接着,在加压力为0.2MPa、加压时间为300秒、加热温度为如表1所述的条件下对该堆叠体进行加压,从而将两片基板B、B接合。
对这样而得的接合体,以目视进行了接合状况的评价。另外,观察已断裂的截面并确认了流路变形的有无。将结果在表1中示出。
在参照例1~3中,确认了虽然能够将两片基板B、B贴合,但无法完全吸收各自具有的贴合面的起伏、翘曲,在接合面的一部分产生了间隙。
在加热到基板B的可变形温度附近的参照例4、5中,能够将两片基板B、B贴合,并且贴合面的起伏、翘曲因加压力而变形,贴合面彼此更加密合,接合面的间隙被显著改善,但并不完全。
在加热到基板B的可变形温度以上的参照例6、7中,能够将两片基板B、B贴合,而且各自具有的贴合面的起伏、翘曲因加压力而变形,贴合面彼此更加密合,且在接合面并未产生间隙,但产生了加压部件所接触的面的变形、流路变形。
<实施例1、2,比较例1~5>
分别将基板A以及基板B用作第一基板以及第二基板,并进行下述的紫外线照射处理工序以及接合工序将它们贴合。在用作第一基板的基板A预先设置了多个微小的流路形成部分。流路形成部分为宽度150μm、深度150μm、长度20mm。
[紫外线照射处理工序]
使用氙准分子灯,在照度为40mW/cm2、照射时间为20秒(针对基板A)或30秒(针对基板B)的条件下,对两片基板的各个的贴合面照射了真空紫外线。
[接合工序]
将两片基板A、B以各自的贴合面相互接触的方式堆叠而得到堆叠体(堆叠工序)。接着,在加压力为0.2MPa、加压时间为300秒、加热温度为如表1所述的条件下对该堆叠体进行加压,从而将两片基板A、B接合。
对这样而得的接合体,以目视进行了接合状况的评价。另外,观察已断裂的截面并确认了流路变形的有无。将结果在表1中示出。
在比较例1~3中,确认了虽然能够将两片基板A、B贴合,但无法完全吸收各自具有的贴合面的起伏、翘曲,在接合面的一部分产生了间隙。
在加热到可变形温度较低的基板(基板B)的可变形温度附近的比较例4、5中,能够将两片基板A、B贴合,并且贴合面的起伏、翘曲因加压力而变形,贴合面彼此更加密合,接合面的间隙被显著改善,但并不完全。
在加热到可变形温度较低的基板(基板B)的可变形温度以上的实施例1、2中,能够将两片基板A、B贴合,而且各自具有的贴合面的起伏、翘曲因加压力而变形,贴合面彼此更加密合,在接合面并未产生间隙,并且也未产生加压部件所接触的面的变形、流路变形。
<实施例3、4,比较例6~8>
分别将基板A以及基板B用作第一基板以及第二基板,并进行下述的等离子气体处理工序以及接合工序将它们贴合。在用作第一基板的基板A预先设置了多个微小的流路形成部分。流路形成部分为宽度150μm、深度150μm、长度20mm。
[等离子气体处理工序]
将基板A、B的各个配置在其贴合面与图4所示的下述的大气压等离子体装置的喷嘴的距离成为3mm的位置处,通过在下述的条件下使大气压等离子体装置动作,对基板A、B的各个进行了等离子气体处理。
-条件-
·处理气体(等离子体用气体):氮气(流量=150L/min)以及洁净干燥空气(流量=1L/min)
·施加功率:1100VA,电压:7.0kVp-p,频率:60kHz
·照射时间:4秒(针对基板A)、5秒(针对基板B)
图4是概略地表示本发明中所使用大气压等离子体装置的一个例子中的结构的说明用剖面图。该大气压等离子体装置例如具有由铝构成的长方体状的壳体60。在该壳体60内水平地配置有与高频电源65电连接的板状的电极61。在该电极61的下表面形成有电介质层62。在该例的大气压等离子体装置中,电极61被设为高压侧电极,壳体60被设为接地侧电极。
在壳体60的上表面设置有向壳体60内供给处理气体的气体供给口63。另外,在壳体60的下表面形成有多个喷嘴64,该多个喷嘴64将在壳体60内通过大气压等离子体而等离子体化的处理气体向外部放出。
电极61的材质为超因瓦合金(通过喷镀在表面形成由500μm的铝构成的被膜而成),表面的尺寸为50mm×300mm。另外,壳体60与电介质层61的分离距离0.5mm。
在这样的大气压等离子体装置中,在大气压或其附近的压力下,从气体供给口63向壳体60内供给处理气体G1。若在该状态下通过高频电源65经由电介质层62向电极61与壳体60之间施加高频电场,则在电极61与壳体60之间产生电介质势垒放电。其结果,存在于壳体60与电介质层62之间的处理气体G1被电离或励起而等离子体化。然后,将等离子体化了的处理气体G2从壳体60的喷嘴64向外部放出,与配置于壳体60的下方的基板(省略图示)的贴合面接触。
[接合工序]
将两片基板A、B以各自的贴合面相互接触的方式堆叠而得到堆叠体(堆叠工序)。接着,在加压力为0.2MPa、加压时间为300秒、加热温度为如表1所述的条件下对该堆叠体进行加压,从而将两片基板A、B接合。
对这样而得的接合体,以目视进行了接合状况的评价。另外,观察已断裂的截面并确认了流路变形的有无。将结果在表1中示出。
在比较例6中,确认了虽然能够将两片基板A、B贴合,但无法完全吸收各自具有的贴合面的起伏、翘曲,在接合面的一部分产生了间隙。
在加热到可变形温度较低的基板(基板B)的可变形温度附近的比较例7、8中,能够将两片基板A、B贴合,并且贴合面的起伏、翘曲因加压力而变形,贴合面彼此更加密合,接合面的间隙被显著改善,但并不完全。
在加热到可变形温度较低的基板(基板B)的可变形温度以上的实施例3、4中,能够将两片基板A、B贴合,而且各自具有的贴合面的起伏、翘曲因加压力而变形,贴合面彼此更加密合,在接合面并未产生间隙,并且也未产生加压部件所接触的面的变形、流路变形。
[表1]
通过以上的结果确认了,通过以可变形温度较低的基板的可变形温度以上的温度对堆叠体进行加热,能够以贴合面的起伏、翘曲因加压力而变形、贴合面彼此更加密合、在接合面不产生间隙的状态将两片基板A、B贴合,并且可得到不产生加压部件所接触的面的变形、流路变形的接合体。
附图标记说明
10 堆叠体
11 第一基板
11a 贴合面
15 第二基板
15a 贴合面
17 接合体
17a 接合面
19 紫外线光源
21 第一微芯片基板
21a 贴合面
22 注入口
23 排出口
24 流路形成部分
25 第二微芯片基板
25a 贴合面
27 微芯片
27a 接合面
50 堆叠体
51 第一微芯片基板
51a 贴合面
55 第二微芯片基板
55a 贴合面
57 接合体
59 紫外线光源
60 壳体
61 电极
62 电介质层
63 气体供给口
64 喷嘴
L 真空紫外线
R 流路
S 空间
Claims (6)
1.一种基板的贴合方法,用于将分别由玻璃或树脂构成的第一基板以及第二基板贴合,其特征在于,
第一基板为基板变形的可变形温度比第二基板的可变形温度高的材质的基板,
所述基板的贴合方法具有:
表面活性化工序,使第一基板的贴合面以及第二基板的贴合面的各个活性化;
堆叠工序,将该第一基板与该第二基板以各自的贴合面接触的方式堆叠;以及
变形工序,使所述第二基板的贴合面按照所述第一基板的贴合面的形状变形,
所述变形工序通过以第二基板的可变形温度以上、且低于第一基板的可变形温度的温度对在所述堆叠工序中所得的第一基板与第二基板的堆叠体进行加热而进行。
2.根据权利要求1所述的基板的贴合方法,其特征在于,
在所述变形工序中,将堆叠后的两张基板向相互接近的方向加压。
3.根据权利要求1或2所述的基板的贴合方法,其特征在于,
所述表面活性化工序是对所述第一基板的贴合面以及所述第二基板的贴合面的各个照射真空紫外线的紫外线照射处理工序。
4.根据权利要求1或2所述的基板的贴合方法,其特征在于,
所述表面活性化工序是使通过大气压等离子体而等离子体化的处理气体与所述第一基板的贴合面以及所述第二基板的贴合面的各个接触的等离子气体处理工序。
5.一种微芯片的制造方法,其特征在于,
在分别由玻璃或树脂构成的第一基板以及第二基板中,在该第一基板以及该第二基板的至少一方的贴合面设置有流路形成部分,
利用权利要求1~4的任一项所述的基板的贴合方法将所述第一基板以及所述第二基板贴合,从而得到在内部具有供介质流动的流路的微芯片。
6.根据权利要求5所述的微芯片的制造方法,其特征在于,
所述流路形成部分仅设于所述第一基板的贴合面。
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- 2017-06-27 KR KR1020187037292A patent/KR101985639B1/ko active IP Right Grant
- 2017-06-27 CN CN201780043854.XA patent/CN109476087A/zh active Pending
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CN113085159A (zh) * | 2021-05-18 | 2021-07-09 | 上汽通用五菱汽车股份有限公司 | 一种增强尾门内外板连接强度的表面处理设备及方法 |
CN113085159B (zh) * | 2021-05-18 | 2023-08-29 | 上汽通用五菱汽车股份有限公司 | 一种增强尾门内外板连接强度的表面处理设备及方法 |
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TWI697407B (zh) | 2020-07-01 |
TW201808649A (zh) | 2018-03-16 |
EP3488998A4 (en) | 2020-03-11 |
US20190300662A1 (en) | 2019-10-03 |
JP2018009924A (ja) | 2018-01-18 |
EP3488998A1 (en) | 2019-05-29 |
JP6394651B2 (ja) | 2018-09-26 |
US10487183B2 (en) | 2019-11-26 |
WO2018012276A1 (ja) | 2018-01-18 |
KR101985639B1 (ko) | 2019-06-03 |
KR20190003801A (ko) | 2019-01-09 |
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