TW201724225A - 雷射加工方法 - Google Patents

雷射加工方法 Download PDF

Info

Publication number
TW201724225A
TW201724225A TW105119567A TW105119567A TW201724225A TW 201724225 A TW201724225 A TW 201724225A TW 105119567 A TW105119567 A TW 105119567A TW 105119567 A TW105119567 A TW 105119567A TW 201724225 A TW201724225 A TW 201724225A
Authority
TW
Taiwan
Prior art keywords
wafer
protective film
laser processing
laser
processing method
Prior art date
Application number
TW105119567A
Other languages
English (en)
Other versions
TWI694504B (zh
Inventor
Yukinobu Ohura
Senichi Ryo
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of TW201724225A publication Critical patent/TW201724225A/zh
Application granted granted Critical
Publication of TWI694504B publication Critical patent/TWI694504B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B23K26/0861—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane in at least in three axial directions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
    • B23K26/0884—Devices involving movement of the laser head in at least one axial direction in at least two axial directions in at least in three axial directions, e.g. manipulators, robots
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/361—Removing material for deburring or mechanical trimming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K37/00—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups
    • B23K37/04—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work
    • B23K37/0408—Auxiliary devices or processes, not specially adapted to a procedure covered by only one of the preceding main groups for holding or positioning work for planar work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

Abstract

提供可以有效率地使形成保護膜之樹脂乾燥的雷射加工方法。為一雷射加工方法，其係沿著分割道(L)對晶圓(W)進行雷射加工，且該晶圓(W)係在藉由格子狀地被形成在晶圓(W)之表面的複數分割道(L)而被區劃之複數區域上形成有裝置(D)，該雷射加工方法包含：晶圓保持工程(步驟S1)，其係以挾盤載置台保持晶圓(W)之背面；樹脂供給工程(步驟S2)，其係對晶圓(W)之表面供給水溶性之液狀樹脂；保護膜形成工程(步驟S3)，其係從氙閃光燈對水溶性之液狀樹脂照射光，使水溶性之液狀樹脂乾燥，在晶圓(W)上形成保護膜(P)；雷射照射工程(步驟S4)，其係沿著分割道(L)，隔著保護膜(P)而對晶圓(W)照射雷射光；及洗淨工程，其係於雷射照射工程之後，洗淨晶圓(W)(步驟S5)。

Description

雷射加工方法
本發明係關於照射雷射光線而將晶圓分割成複數裝置晶片的雷射加工方法。
一般而言，在裝置之製造中，藉由格子狀地配列在晶圓之表面的複數分割道(分割預定線)區劃複數晶片區域，在該些的晶片區域形成IC(Integrated Circuit)、LSI(Large Scale Integration)等之裝置。該些裝置之分割利用沿著晶圓之分割道照射雷射光線而在晶圓表面形成溝部之雷射加工。
在該種雷射加工中，於照射雷射光線之時，產生且飛散被稱為殘餘物之微細粉塵而堆積在裝置之表面，而降低裝置之品質。因此，提案有在晶圓之表面事先塗佈保護膜後施予雷射加工，與保護膜同時洗淨除去附著於保護膜上之殘餘物的加工方法(例如，參照專利文獻1)。在該種加工方法中，對晶圓之表面供給構成保護膜之液狀樹脂之後，使該晶圓朝周方向旋轉而使樹脂乾燥，形成規定之保護膜。
〔先前技術文獻〕 〔專利文獻〕
[專利文獻1]日本特開2006-140311號公報
然而，當對形成有保護膜之晶圓之表面照射雷射時，在晶圓之表面附近激勵構成晶圓之元素的電漿。當電漿被激勵時，由於保護膜被曝露於電漿，故在保護膜之厚度薄之情況下，由於晶圓被電漿蝕刻，故有晶圓受損之虞。因此，以將保護膜之厚度形成能耐電漿之厚度為佳。
但是，在以往藉由使晶圓朝周方向旋轉進行的乾燥中，將保護膜形成至規定之厚度需要長時間，且生產性差。再者，在以往之方法中，難以使保護膜之內部充分乾燥。尤其，在裝置之表面設置凸塊(金屬電極)之情況下，由於需要將保護膜形成覆蓋至凸塊之上部的足夠厚度，故保護膜之厚度必然變厚，且乾燥所需之時間變長。
本發明係鑒於如此之問題點而創作出，其目的在於提供可以有效率地使形成保護膜之樹脂乾燥之雷射加工方法。
為了解決上述課題，達成目的，本發明係一種雷射加工方法，其係將在藉由格子狀地被形成在晶圓之表面的複數分割道而被區劃之複數區域上形成有裝置的晶圓，沿著上述分割道而進行雷射加工，具有：晶圓保持工程，以挟盤載置台保持上述晶圓之背面；樹脂供給工程，其係對上述晶圓之表面供給水溶性之液狀樹脂；保護膜形成工程，其係從氙閃光燈，對上述水溶性之液狀樹脂照射光，使上述水溶性之樹脂乾燥，而在上述晶圓之表面形成保護膜；雷射照射工程，其係沿著上述分割道，隔著上述保護膜而對上述晶圓照射雷射光；及洗淨工程，其係於上述雷射照射工程之後，洗淨上述晶圓。
從氙閃光燈照射之光以脈衝光為佳。再者，以脈衝光之發光頻率3~100Hz照射，每1脈衝之能量為10~1000J(焦耳)為佳。
若藉由本發明時，可以有效率地乾燥被供給至晶圓之表面的液狀樹脂而形成能耐雷射加工之足夠厚度的保護膜，且可以抑制由於雷射加工所致的晶圓損傷。
1‧‧‧雷射加工裝置
10‧‧‧挾盤載置台
20‧‧‧雷射光線照射部
21‧‧‧振盪器
22‧‧‧聚光器
30‧‧‧卡匣
40‧‧‧暫時載置部
50‧‧‧保護膜形成兼洗淨部
51‧‧‧旋轉載置台
51a‧‧‧吸附挾盤
53‧‧‧水承受部
54‧‧‧乾燥光源部
54a‧‧‧光源本體
55‧‧‧樹脂液供給噴嘴
57‧‧‧洗淨水噴嘴
58‧‧‧氙閃光燈
61‧‧‧第1搬運手段
62‧‧‧第2搬運手段
70‧‧‧液狀樹脂
72‧‧‧洗淨水
100‧‧‧雷射加工溝
BP‧‧‧凸塊
D‧‧‧裝置
F‧‧‧環狀框架
L‧‧‧分割道
P‧‧‧保護膜
T‧‧‧黏貼膠帶
W‧‧‧晶圓
WS‧‧‧基板
h‧‧‧膜厚
圖1為與本實施型態有關之雷射加工方法之加工對象的晶圓之斜視圖。
圖2為圖1所示之晶圓之重要部位的側面圖。
圖3為表示雷射加工裝置之構成例的斜視圖。
圖4為表示雷射加工裝置之保護膜形成兼洗淨部之構成例的斜視圖。
圖5為表示與本實施型態有關之雷射加工方法之程序的流程圖。
圖6為表示水溶性之液狀樹脂之供給工程的剖面圖。
圖7為表示使被供給之液狀樹脂乾燥而形成保護膜之保護膜形成工程的剖面圖。
圖8表示形成保護膜之晶圓之重要部位的剖面圖。
圖9為表示雷射光照射工程的剖面圖。
圖10為表示洗淨晶圓之洗淨工程的剖面圖。
說明與本發明之實施型態有關之雷射加工方法。並非藉由以下實施型態所記載之內容限定本發明。再者，以下所記載之構成要素實質上包含與所屬技術領域中具有通常知識者容易思及者相同的構成要素。而且，以下所記載之構成能夠適當組合。再者，在不脫離本發明之主旨的範圍下，可以進行構成之各種省略、置換或變更。
圖1為與本實施型態有關之雷射加工方法之加工對象的晶圓之斜視圖，圖2為圖1所示之晶圓之重要部位的側面圖。晶圓(被加工物)W如圖1所示般，具有圓板狀之基板WS之半導體晶圓或光碟晶圓。再者，晶圓 W之基板WS係使用矽、藍寶石、鎵等而形成。晶圓W如圖1及圖2所示般，在晶圓W之表面格子狀地形成複數分割道(加工預定線)L，同時在藉由複數分割道L被區劃之各區域上分別形成裝置D。再者，晶圓W之裝置D具備從該裝置D之表面分別突出而形成的複數凸塊BP(電極)。該些凸塊BP藉由例如金(Au)或是鉑(Pt)等之貴金屬、或是Sn-Cu等之合金而形成。另外，被形成在各裝置D之凸塊BP之數量、位置及大小並非限定於圖1所示者，若配置成露出至裝置D之表面時，可以適當地變更凸塊BP之數量、位置及大小。
圖3係表示與本實施型態有關之雷射加工方法所使用之雷射加工裝置之構成例的斜視圖。另外，雷射加工裝置1並不限定於圖3所示之構成例。雷射加工裝置1係在晶圓W之表面形成水溶性之保護膜，同時沿著晶圓W之分割道L照射雷射光而形成雷射加工溝(稱為雷射加工)。而且，於雷射加工後，從晶圓W之表面除去保護膜。
雷射加工裝置1如圖3所示般具備挟盤載置台10和雷射光照照射部20。雷射加工裝置1更具備載置收容雷射加工前後之晶圓W的卡匣30的卡匣升降器(無圖示)；暫時載置雷射加工前後之晶圓W的暫時載置部40；和在雷射加工前之晶圓W形成保護膜，並且從雷射加工後之晶圓W除去保護膜之保護膜形成兼洗淨部50。而且，雷射加工裝置1具備：使挾盤載置台10和雷射光 照照射部20在X軸方向做相對性移動的無圖示之X軸移動手段；使挾盤載置台10和雷射光照照射部20在Y軸方向做相對性移動的無圖示之Y軸移動手段；使挾盤載置台10和雷射光照照射部20在Z軸方向做相對性移動的無圖示之Z軸移動手段。
挾盤載置台10係於對形成有保護膜之晶圓W施予雷射加工之時，保持該晶圓W。挾盤載置台10係構成表面之部分由多孔陶瓷等所形成之圓盤形狀，經由無圖示之真空吸引路徑而與無圖示之真空吸引源連接，藉由吸引被載置在表面之晶圓W，保持該晶圓W。挾盤載置台10被設置成藉由X軸移動手段，涵蓋卡匣30附近之搬出搬入區域TR和雷射光線照射部20附近之加工區域PR，在X軸方向移動自如，並且被設置藉由Y軸移動手段在Y軸方向移動自如。
雷射光線照射部20被設置在配設於裝置本體2上之加工區域P，並且，對被保持在挾盤載置台10之晶圓W之表面照射雷射光線而形成雷射加工溝。雷射光線係相對於晶圓W具有吸收性之波長的雷射光線。雷射光線照射部20相對於被保持在挾盤載置台10之晶圓W，被設置成藉由Z軸移動手段在Z軸方向移動自如。雷射光線照射部20具備使雷射光線振盪之振盪器21，和聚光藉由該振盪器21振盪之雷射光線的聚光器22。振盪器21係因應晶圓W之種類、加工型態等，適當調整振盪之雷射光線之頻率。作為振盪器21，可以使用例如YAG雷射振 盪器或YVO雷射振盪器等。聚光器22包含變更藉由振盪器21被振盪之雷射光線之前進方向的全反射鏡或聚光雷射光線之聚光透鏡等而構成。
卡匣30係收從複數片經黏貼膠帶T被黏貼在環狀框架F的晶圓W。卡匣升降器以在Z軸方向升降自如之方式被設置在雷射加工裝置1之裝置本體。
暫時載置部40係從卡匣30取出一片雷射加工前之晶圓W，同時將雷射加工後之晶圓W收容在卡匣30內。暫時載置部40係包含從卡匣30取出雷射加工前之晶圓W，同時將雷射加工後之晶圓W插入至卡匣30內之搬出搬入手段41，和暫時性地載置雷射加工前後之晶圓W之一對軌道42而構成。
保護膜形成兼洗淨部50係藉由第1搬運手段61搬運一對軌道42上之雷射加工前之晶圓W，在該雷射加工前之晶圓W形成保護膜。再者，保護膜形成兼洗淨部50係藉由第2搬運手段62搬運雷射加工後之晶圓W，除去該雷射加工後之晶圓W的保護膜。該些第1及第2搬運手段61、62分別被構成例如能夠吸附晶圓W之表面而抬起，抬起晶圓W而搬運至期待的位置。
保護膜形成兼洗淨部50係如圖4所示般，具備保持雷射加工前後之晶圓W的旋轉載置台51，和此該旋轉載置台51繞與Z軸方向(參照圖3)平行之軸心旋轉之電動馬達52，和被配置在旋轉載置台51之周圍的水承受部53。旋轉載置台51具備被形成圓板狀而由多孔陶 瓷等形成在表面(上面)之中心部的吸附挟盤，該吸附挾盤51a與無圖示之吸引手段連通。依此，旋轉載置台51藉由吸引被載置在吸附挾盤51a之晶圓W而保持該晶圓W。
電動馬達52係在其驅動軸52a之上端連結旋轉載置台51，且將該旋轉載置台51支撐成旋轉自如。水承受部50具備圓筒狀之外側壁53a及內側壁53b，和連結該些外側壁53a及內側壁53b之底壁53c而形成環狀。水承受部53接受在晶圓W之表面形成保護膜之時被供給至該表面之液狀樹脂，或於洗淨、除去表面之保護膜之時，被供給至該表面之洗淨水等之剩餘量。在底壁53c設置排液口53c1，在該排液口53c1連接放洩軟管53d。
再者，保護膜形成兼洗淨部50具備供給在被保持於旋轉載置台51上之晶圓W構成保護膜之水溶性之液狀樹脂的樹脂液供給噴嘴55，和對旋轉載置台51上之雷射加工後之晶圓W供給洗淨水的洗淨水噴嘴57。各噴嘴55、57分別被構成在噴嘴開口位於旋轉載置台51之中央上方的作動位置，和從旋轉載置台51偏離之退避位置移動自如的樹脂液供給噴嘴55，雖然省略圖示，但是被連接於液狀樹脂供給源，可以將水溶性之液狀樹脂供給至晶圓W之表面。作為液狀樹脂，使用PVA(聚乙烯醇)、PEG(聚乙二醇)或PVP(聚乙烯吡咯酮)等之水溶性之樹脂材。該些液狀樹脂係藉由乾燥而固化在晶圓W之表面形成保護該表面之保護膜。再者，洗淨水噴嘴57 係被連接於省略圖示之洗淨水(例如純水)供給源。
再者，保護膜形成兼洗淨部50具備被配置成與旋轉載置台51相向，用以使被供給至該旋轉載置台51上之晶圓W的液狀樹脂乾燥之乾燥光源部54。該乾燥光源部54具備光源本體54a，和支撐該光源本體54a之支撐部54b，該支撐部54d例如在不與上述第2搬運手段62之範圍，將光源本體54a支撐成在位於旋轉載置台5之上方的作動位置，和從旋轉載置台51偏離之退避位置移動自如。
光源本體54a呈現例如周壁從圓形板之周緣朝下方延伸的形狀，在內部設置有當作作動燈之氙閃光燈58(參照圖6)。光源本體54a被形成具有與水承受部53之外徑幾乎相同之外徑的大小，被配置在內部的氙閃光燈58被配置成在照射區域包含旋轉載置台51全體。氙閃光燈58係發光例如波長為200nm~1000nm之脈衝光的光源，具備使該脈衝光振盪之無圖示之振盪器。在本實施型態中，氙閃光燈58係照射發光頻率為3~100Hz之脈衝光，該脈衝光之每1脈衝之能量為10~1000J(焦耳)。
然而，覆蓋晶圓W之表面的保護膜係藉由使液狀樹脂而被形成。保護膜原來係防止雷射加工時產生之殘餘物，但是保護膜曝露於雷射加工時被激勵的電漿，晶圓被電漿蝕刻，依此有晶圓受損之虞。因此，以將保護膜之厚度形成能耐電漿之厚度為佳。但是，在以往僅藉由使晶圓W朝周方向旋轉進行的乾燥中，將保護膜形成至規 定之厚度需要長時間，且生產性差。尤其，在裝置D之表面設置凸塊BP之晶圓W之情況下，由於需要將保護膜形成覆蓋至凸塊BP之上部的足夠厚度，故保護膜之厚度必然變厚，且乾燥所需之時間變長。
在與本實施型態有關之雷射加工方法中，在有效率地使被供給至晶圓W之表面的液狀樹脂乾燥，以短時間形成耐雷射加工之足夠厚度的保護膜之點具有特徵。接著，針對雷射加工方法進行說明。
圖5為表示與本實施型態有關之雷射加工方法之程序的流程圖。首先，作為加工順序，在旋轉載置台51保持未加工之晶圓W之背面(步驟S1：晶圓保持工程)。具體而言，使用搬運搬入手段41從卡匣30取出一片被收容在雷射加工裝置1之卡匣30的雷射加工前之晶圓W，將該晶圓W載置在一對軌道42上。被載置在該一對軌道42上之晶圓W係藉由第1搬運手段61被搬運至保護膜形成兼洗淨部50之旋轉載置台51。旋轉載置台51藉由吸引被載置在吸附挾盤51a之晶圓W而保持該晶圓W。
接著，對晶圓W之表面供給液狀樹脂(步驟S2：供給工程)。具體而言，如圖6所示般，在晶圓W之上方配置樹脂液供給噴嘴55，且以規定之旋轉數使旋轉載置台51旋轉之狀態下，從樹脂液供給噴嘴55對晶圓W供給水溶性之液狀樹脂(例如，PVA(聚乙烯醇))70。此情況下，樹脂液供給噴嘴55之供給口係以位在旋 轉載置台51之旋轉軸上為佳。若藉由此，由於被供給之液狀樹脂70係藉由隨著旋轉載置台51之旋轉的離心力，從晶圓W之中心朝徑向外側擴散，故可以將晶圓W上之液狀樹脂調整成均勻厚度。
接著，對晶圓W之表面使液狀樹脂乾燥而形成保護膜(步驟S3)。具體而言，如圖7所示般，使配置有氙閃光燈58之乾燥光源部54之光源本體54a，位於保持晶圓W之旋轉載置台51之上方，在該狀態下對氙閃光燈58進行點燈。在本實施型態中，氙閃光燈58係照射發光頻率為10~150脈衝/秒之脈衝光，該脈衝光被設定成每1脈衝之能量為10~15J(焦耳)。依此，晶圓W上之液狀樹脂係藉由氙閃光燈58之脈衝光之照射而進行乾燥(固化)，如圖8所示般，在晶圓W之表面形成期待之膜厚h(例如，20μm)之保護膜P。
接著，進行雷射加工(步驟S4：雷射線照射工程)。在此情況下，使乾燥光源部54之光源本體54a從保持晶圓W之旋轉載置台51之上方退避，同時藉由第2搬運手段62，使得晶圓W從保護膜形成兼洗淨部50之旋轉載置台51之上被搬運至挟盤載置台10上。在挾盤載置台10中，被載置在表面之晶圓W藉由被吸引被保持。而且，雷射光線照射部20係從聚光器22通過晶圓W之保護膜P而朝向規定之分割道L而照射雷射光線。在此，邊照射雷射光線，邊藉由X軸移動手段或Y軸移動手段，使挾盤載置台10以規定之進給速度(例如，100mm/ 秒)朝X軸方向或Y軸方向移動。依此，如圖9所示般，沿著規定之分割道L，藉由燒蝕加工形成雷射加工溝100。在此情況下，由於在晶圓W之表面形成期待之膜厚h之保護膜P，故可以抑制由於雷射加工導致晶圓W損傷(損壞)。
接著，藉由洗淨除去保護膜(步驟S5：洗淨工程)。在此情況下，藉由第2搬運手段62，雷射加工後之晶圓W從挟盤載置台10之上方再次被搬運至保護膜形成兼洗淨部50之旋轉載置台51之上方。而且，被保持在旋轉載置台51之吸附挾盤51a。如圖10所示般，在將洗淨水噴嘴57配置在晶圓W之上方，以規定之旋轉數使旋轉載置台51旋轉之狀態下，從洗淨水噴嘴57對晶圓W供給洗淨水72。由於保護膜P(圖8)係使水溶性之液狀樹脂乾燥而形成，故藉由朝向該保護膜P供給洗淨水72，保護膜P溶解於洗淨水72而從晶圓W之表面被除去。在此情況下，藉由雷射加工產生的殘餘物與保護膜P一起從晶圓W之表面被除去。最後，沿著雷射加工溝100分割裝置D(步驟S6)而結束處理。
若藉由本實施型態時，為一雷射加工方法，其係沿著分割道L對晶圓W進行雷射加工，且該晶圓W係在藉由格子狀地被形成在晶圓W之表面的複數分割道L而被區劃之複數區域上形成有裝置D，該雷射加工方法因具有：晶圓保持供給工程(步驟S1)，其係保持晶圓W之背面；供給工程(步驟S2)，其係對晶圓之表面供給 水溶性之液狀樹脂70；保護膜形成工程(步驟S3)，其係從氙閃光燈58對水溶性之液狀樹脂70照射光，使水溶性之液狀樹脂乾燥，在晶圓W上形成保護膜P；雷射照射工程(步驟S4)，其係沿著分割道L，隔著保護膜P而對晶圓W照射雷射光；及洗淨工程，其係於雷射照射工程之後，洗淨晶圓W(步驟S5)，故可以藉由氙閃光燈58之脈衝光之照射而有效率地使晶圓W之表面之液狀樹脂70乾燥而形成具有耐雷射加工之足夠膜厚h之保護膜P，且可以抑制由於雷射加工導致晶圓W及黏貼膠帶T的損傷。
作為一例，若藉由發明者之實驗等，於使用上述氙閃光燈58，進行液狀樹脂之乾燥(固化)之情況下，可以在2~3分鐘形成上述期待之膜厚h之保護膜P。對此，僅藉由使晶圓W朝周方向旋轉的乾燥(固化)中，由於要形成上述期待之膜厚h的保護膜P需要30分鐘，故可以在較以往更短之時間有效率地形成期待之膜厚h之保護膜P。
再者，發明者雖然使用鹵素燈加熱器(峰值波長：900nm~1600nm)，或石英加熱器(峰值波長：1500nm~5600nm)，但是在此情況下，為了使乾燥至期待之膜厚h之保護膜P的內部，需要增大輸出而進行照射，成為由於發熱量增大，使得保護膜P損傷，同時保持晶圓W和環狀框架F之黏貼膠帶T溶融的結果，無法在短時間有效率地形成期待之膜厚h的保護膜P。
再者，若藉由本實施型態，由於氙閃光燈58係照射發光頻率為10~150脈衝/秒之脈衝光，該脈衝光被設定成每1脈衝之能量為10~15J(焦耳)，故可以在短時間形成期待之膜厚的保護膜。
雖然說明本發明之一實施型態，但是本實施型態僅為例示，並無限定發明之範圍的意圖。本實施型態可以其他各種型態來實施，只要在不脫離發明之主旨的範圍下，可進行各種省略、置換、變更。本實施型態或其變形，包含在發明之範圍或主旨，並且也包含在申請專利範圍所記載之發明和其均等之範圍內。
在本實施型態中，氙閃光燈58雖然被配置成可以同時照射晶圓W之表面全面，但是若可以照射晶圓W之表面全體時，例如將直線狀之氙閃光燈設成從晶圓W之中心在徑向延伸的直線形狀。在此情況下，藉由邊從直線形狀之氙閃光燈照射脈衝光，邊使晶圓W朝周方向旋轉，可以對晶圓W之全面照射脈衝光。在此情況下，可以使先閃光燈小型化而成為低成本化。
再者，在本實施型態中，作為晶圓W，雖然使用在裝置D設置有凸塊BP來作說明，但是即使針對不設置有凸塊BP之晶圓W也能夠適用本發明。

Claims (3)

  1. 一種雷射加工方法，其係沿著分割道對晶圓進行雷射加工，且該晶圓在藉由格子狀地被形成在晶圓之表面的複數分割道而被區劃之複數區域上形成有裝置，該雷射加工方法具有：晶圓保持工程，以挟盤載置台保持上述晶圓之背面；樹脂供給工程，其係對上述晶圓之表面供給水溶性之液狀樹脂；保護膜形成工程，其係從氙閃光燈，對上述水溶性之液狀樹脂照射光，使上述水溶性之樹脂乾燥，而在上述晶圓之表面形成保護膜；雷射照射工程，其係沿著上述分割道，隔著上述保護膜而對上述晶圓照射雷射光；及洗淨工程，其係於上述雷射照射工程之後，洗淨上述晶圓。
  2. 如請求項1所記載之雷射加工方法，其中，上述光為脈衝光。
  3. 如請求項2所記載之雷射加工方法，其中，上述脈衝光之發光頻率以3~100Hz照射，每1脈衝之能量為10~1000J。
TW105119567A 2015-07-29 2016-06-22 雷射加工方法 TWI694504B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015150049A JP6563728B2 (ja) 2015-07-29 2015-07-29 レーザー加工方法
JP2015-150049 2015-07-29

Publications (2)

Publication Number Publication Date
TW201724225A true TW201724225A (zh) 2017-07-01
TWI694504B TWI694504B (zh) 2020-05-21

Family

ID=57882917

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105119567A TWI694504B (zh) 2015-07-29 2016-06-22 雷射加工方法

Country Status (4)

Country Link
US (1) US9847257B2 (zh)
JP (1) JP6563728B2 (zh)
SG (1) SG10201605490WA (zh)
TW (1) TWI694504B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108480849A (zh) * 2018-05-02 2018-09-04 江苏匠心信息科技有限公司 一种石墨烯芯片接合薄膜的烧蚀加工方法
TWI829950B (zh) * 2019-08-07 2024-01-21 日商迪思科股份有限公司 保護構件形成方法及保護構件形成裝置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6887722B2 (ja) * 2016-10-25 2021-06-16 株式会社ディスコ ウェーハの加工方法及び切削装置
JP2019069465A (ja) * 2017-10-11 2019-05-09 株式会社ディスコ レーザー加工装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5705232A (en) * 1994-09-20 1998-01-06 Texas Instruments Incorporated In-situ coat, bake and cure of dielectric material processing system for semiconductor manufacturing
JPH1097741A (ja) * 1996-09-20 1998-04-14 Dainippon Ink & Chem Inc 保護層の形成方法及び装置
JP3997379B2 (ja) * 2000-02-24 2007-10-24 Ｎｅｃエレクトロニクス株式会社 ランプアニール装置
US6518097B1 (en) * 2000-08-29 2003-02-11 Korea Advanced Institute Of Science And Technology Method for fabricating wafer-level flip chip package using pre-coated anisotropic conductive adhesive
JP4256724B2 (ja) * 2003-06-05 2009-04-22 三星ダイヤモンド工業株式会社 脆性材料基板のスクライブ方法及びその装置
JP2005005303A (ja) * 2003-06-09 2005-01-06 Sharp Corp 溶液塗布方法および溶液塗布装置
JP4571850B2 (ja) 2004-11-12 2010-10-27 東京応化工業株式会社 レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法
JP5043406B2 (ja) * 2006-11-21 2012-10-10 大日本スクリーン製造株式会社 基板乾燥方法および基板乾燥装置
JP5324180B2 (ja) * 2008-10-07 2013-10-23 株式会社ディスコ レーザ加工方法およびレーザ加工装置
US9193892B2 (en) * 2011-06-23 2015-11-24 Unitika Ltd. Aqueous dispersion, and laminate, adhesive for footwear, and footwear made using same
JP5423831B2 (ja) * 2012-04-04 2014-02-19 パナソニック株式会社 樹脂硬化装置
JP6144028B2 (ja) * 2012-10-12 2017-06-07 株式会社ディスコ ウエーハの加工方法
WO2014112554A1 (ja) * 2013-01-16 2014-07-24 コニカミノルタ株式会社 薄膜形成方法及び薄膜形成装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108480849A (zh) * 2018-05-02 2018-09-04 江苏匠心信息科技有限公司 一种石墨烯芯片接合薄膜的烧蚀加工方法
TWI829950B (zh) * 2019-08-07 2024-01-21 日商迪思科股份有限公司 保護構件形成方法及保護構件形成裝置

Also Published As

Publication number Publication date
US9847257B2 (en) 2017-12-19
JP6563728B2 (ja) 2019-08-21
US20170033007A1 (en) 2017-02-02
TWI694504B (zh) 2020-05-21
SG10201605490WA (en) 2017-02-27
JP2017034008A (ja) 2017-02-09

Similar Documents

Publication Publication Date Title
US11752576B2 (en) Substrate processing system for removing peripheral portion of substrate, substrate processing method and computer readable recording medium thereof
JP6739873B2 (ja) ウェーハの加工方法
JP6385131B2 (ja) ウェーハの加工方法
JP5133855B2 (ja) 保護膜の被覆方法
JP6934563B2 (ja) 基板処理システム及び基板処理方法
TWI392002B (zh) Laser processing device
TWI821164B (zh) 晶圓的加工方法
TW201626447A (zh) 晶圓之加工方法
TWI694504B (zh) 雷射加工方法
JP2007073670A (ja) 水溶性樹脂被覆方法
JP6918420B2 (ja) ウェーハの加工方法
JP6328522B2 (ja) 保護膜被覆方法および保護膜被覆装置
JP6137798B2 (ja) レーザー加工装置及び保護膜被覆方法
JP6211884B2 (ja) ウェーハの加工方法
JP2010267638A (ja) 保護膜の被覆方法及びウエーハのレーザ加工方法
TW201724210A (zh) 晶圓之加工方法
JP2013021211A (ja) ウエーハの加工方法
JP2024006600A (ja) ウェーハの処理方法及び処理装置
TWI836786B (zh) 基板處理系統、基板處理方法及電腦記錄媒體
JP6475060B2 (ja) レーザー加工方法
TW202213481A (zh) 晶圓的加工方法