TW201707226A - 可擴展的電壓源 - Google Patents

可擴展的電壓源 Download PDF

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TW201707226A
TW201707226A TW105114779A TW105114779A TW201707226A TW 201707226 A TW201707226 A TW 201707226A TW 105114779 A TW105114779 A TW 105114779A TW 105114779 A TW105114779 A TW 105114779A TW 201707226 A TW201707226 A TW 201707226A
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stack
semiconductor
voltage source
diode
layer
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TWI649891B (zh
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Daniel Fuhrmann
Wolfgang Guter
Victor Khorenko
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Azur Space Solar Power Gmbh
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Abstract

一種可擴展電壓源，其具有：數量為N的相互串聯連接之部分電壓源，該等部分電壓源構造為半導體二極體，其中該等部分電壓源中之每一者具有一個半導體二極體，該半導體二極體具有p-n接面，每個半導體二極體具有p摻雜之吸收層，其中p吸收層藉由p摻雜之鈍化層鈍化，該p摻雜之鈍化層具有比該p吸收層之帶隙更大的帶隙，該半導體二極體具有n吸收層，其中該n吸收層藉由n摻雜之鈍化層鈍化，該n摻雜之鈍化層具有比該n吸收層之帶隙更大的帶隙，且各個部分電壓源之部分電源電壓相互間具有小於20%之偏差；在每兩個彼此相繼的部分電壓源之間構造有一個穿隧二極體，其中該穿隧二極體具有多個半導體層，該等半導體層具有比該p/n吸收層之帶隙更大的帶隙，且具有更大帶隙之半導體層分別由具有經改變的化學計量之材料及/或不同於該半導體二極體之p/n吸收層之元素成分的材料組成；該等部分電壓源及該穿隧二極體單片地整合在一起，且共同構成具有上側及下側之第一堆疊，且該等部分電壓源之數量N大於等於3；光在上側上入射至該堆疊，且在堆疊上側之照射面積之尺寸基本上為該堆疊在上側上之面積之尺寸，且該第一堆疊具有小於12μm之總厚度；在300K之情況下，只要該第一堆疊由具有特定波長之光子流照射，則該第一堆疊具有大於3伏特之電源電壓，其中在自該堆疊之上側向該 堆疊之下側的光入射方向上，半導體二極體之p吸收層及n吸收層之總厚度自最上面之二極體向著最下面之二極體增加。

Description

可擴展的電壓源
本發明係關於一種可擴展(skalierbar)電壓源。
由US 4 127 862、US 6 239 354 B1、DE 10 2010 001 420 A1、Nader M.Kalkhoran等人所寫的文章「用於多接面光電能量轉換器之矽化鈷電池間的歐姆接觸(Cobalt disilicide intercell ohmic contacts for multijunction photovoltaic energy converters)」(應用物理學快報(Appl.Phys.Lett.)64，1980(1994))以及A.Bett等人所寫的文章「單色光照射下之III-V族太陽能電池(III-V Solar cells under monochromatic illumination)」(2008年第33屆IEEE光電專家會議(PVSC，08，33rd IEEE)論文集，第1-5頁，ISBN：978-1-4244-1640-0)已知可擴展電壓源或由III-V族材料構成之太陽能電池。
在此背景下，本發明之任務在於：給出一種裝置，該裝置對先前技術作出進一步改良。
該任務藉由具有技術方案1之特徵的可擴展電壓源來解決。本發明之有利實施例係從屬技術方案之目標。
根據本發明之目標提出可擴展電壓源，該可擴展電壓源具有數量為N的相互串聯連接之部分電壓源，該等部分電壓源構造為半導體二極體，其中該等部分電壓源中之每一者具有一個半導體二極體，該半導體二極體具有p-n接面，該半導體二極體具有p摻雜之吸收層 (Absorptionsschicht)，其中p吸收層藉由p摻雜之鈍化層鈍化，該p摻雜之鈍化層具有比該p吸收層之帶隙更大的帶隙，該半導體二極體具有n吸收層，其中該n吸收層藉由n摻雜之鈍化層鈍化，該n摻雜之鈍化層具有比該n吸收層之帶隙更大的帶隙，且各個部分電壓源之部分電源電壓相互間具有小於20%之偏差；在每兩個彼此相繼的部分電壓源之間構造有一個穿隧二極體，其中該穿隧二極體具有多個半導體層，該等半導體層具有比該p/n吸收層之帶隙更大的帶隙，且具有更大帶隙之半導體層分別由具有經改變的化學計量(Stöchiometrie)之材料及/或不同於該半導體二極體之p/n吸收層之元素成分的材料組成；該等部分電壓源及該穿隧二極體單片地整合在一起且共同構成具有上側及下側之第一堆疊(Stapel)，且該等部分電壓源之數量N大於等於3；光在上側上入射至該第一堆疊上，且堆疊上側上之照射面積之尺寸基本上為該第一堆疊在上側上之面積之尺寸，且該第一堆疊具有小於12μm之總厚度；在300K之情況下，只要該第一堆疊由光子流照射，則該第一堆疊具有大於3伏特之電源電壓，其中在自該第一堆疊之上側向該第一堆疊之下側的光入射方向上，半導體二極體之p吸收層及n吸收層之總厚度自最上面之二極體向著最下面之二極體增加，且該電壓源在堆疊之下側附近具有環繞的、台階形之邊緣。
應注意，表述「基本上」結合堆疊上側上之照射面積與第一堆疊在上側上之面積之尺寸的比較應理解為，面積之區別尤其小於20%，或較佳小於10%，或較佳小於5%，或最佳兩個面積相等。
亦應注意，用於照射堆疊上側之「光」的表述應理解為具有吸收層之吸收範圍內的波長光譜之光。應理解，具有一個確定的、即吸收之波長的，亦即吸收層之吸收範圍內之波長的單色光亦係適合的。
應理解，較佳以確定波長之光照射該第一堆疊之整個上側，即整個表面或幾乎整個表面。應注意，深入研究以出人意料之方式表 明：與先前技術不同，借助當前之單片堆疊方式以有利方式得到了3V以上之電源電壓。
根據本發明之裝置之一個優點在於：藉由多個部分電壓源之串聯連接亦能夠製造具有4伏以上或更大之電壓值的電壓源，借助單片整合結構能夠製造簡單且成本上有利且可靠之電壓源。另一優點為：借助堆疊形式之配置與迄今矽二極體之側向配置相比實現了較大的面積節省。尤其由發射二極體或光源僅需照射該堆疊之小得多的接收面。
在一延伸組態中，各個部分電壓源之部分電源電壓相互間偏差小於10%。由此實質地改良了作為可擴展電壓源、尤其作為參考電壓源之適用性。應理解，術語「可擴展」係關於整個堆疊之電源電壓之振幅。
在另一延伸組態中，該等半導體二極體分別具有相同之半導體材料，其中，在此二極體之半導體材料具有相同之晶體組成(kristalline Zusammensetzung)，較佳化學計量幾乎相同，或較佳化學計量完全相同。同樣有利的，該第一堆疊經配置在基板上。在一實施例中，該半導體材料及/或該基板係由III-V族材料組成。尤其較佳地，該基板包括鍺或砷化鎵，及/或，該基板上之半導體層具有砷及/或磷。換言之，該半導體層包括含砷之層及含磷之層，即由GaAs或AlGaAs或InGaAs組成之層作為砷化物層之實例以及InGaP作為磷化物層之實例。
較佳地，在該第一堆疊之下側上構造第二電壓連接端，尤其地，該第二電壓連接端構造成穿過基板。
在另一實施例中，該半導體二極體由與該基板相同之材料組成。優點在於，尤其此兩部分之膨脹係數相同。有利地，該半導體二極體基本上由III-V族材料組成。尤其較佳地使用GaAs。
在一較佳實施例中，在該第一堆疊之上側上構造有第一電壓連接端，該第一電壓連接端經構造為邊緣附近的環繞之金屬接觸部或經構造為邊緣處之單個接觸面。
此外，較佳地，該第一堆疊具有小於2mm2或小於1mm2之基面。研究已表明：有利地，該基面以四邊形構造。該堆疊之基面較佳以正方形構造。
進一步研究已表明，為了達到特別高之電壓，有利地，構造第二堆疊且將兩個堆疊相互串聯地連接，從而該第一堆疊之電源電壓與該第二堆疊之電源電壓相加。較佳地，該第一堆疊與該第二堆疊並排配置在共同載體上。
在一延伸組態中，該第一堆疊之電源電壓與該第二堆疊之電源電壓偏差小於15%。
此外，較佳地，在堆疊之最下面之半導體二極體的下面構造有半導體鏡。研究已表明：能夠將多個堆疊並排構造在一個半導體晶圓或半導體基板片上，其方式為：在整面地、較佳磊晶製造層之後，實施所謂的台面蝕刻(Mesaätzung)。為此，借助遮罩製程產生漆遮罩，然後較佳實施濕式化學蝕刻以產生台面溝槽。該台面蝕刻較佳終止在基板中或終止在基板上。
在一實施例中，在各個二極體之p吸收層與n吸收層之間構造有本質層。此處，本質層應理解為具有低於1E16 1/cm2、較佳小於5E15 1/cm2、最佳小於1.5E15 1/cm2之摻雜的半導體層。
在一延伸組態中，較佳地，每個堆疊在下側附近具有環繞的、台階形(absatzförmig)之邊緣，其中在兩個堆疊直接相鄰之情況下，在堆疊結構的外側上構成環繞之邊緣作為共同環繞邊緣，從而電壓源具有環繞之邊緣。
邊緣較佳為階台形的(stufenförmig)或構造為階台。在此，邊緣或 階台之表面較佳大部分具有平面，其中，邊緣或階台之表面之法線構造為平行或幾乎平行於第一堆疊之表面的法線或相應堆疊之表面的法線。應注意，邊緣或階台之側面構造為基本或恰好垂直於邊緣或階台之表面。
邊緣或階台之棱邊分別與第一堆疊之四個側面中之每一者或分別多個堆疊之側面距離至少5μm且最大500μm。棱邊至直接相鄰之側面之距離範圍分別較佳在10μm與300μm之間。該距離範圍尤其在50μm與250μm之間。
第一堆疊之側面及尤其堆疊之所有側面較佳構造為平的，且尤其構造為垂直或幾乎垂直的。側面上之法線相對於相鄰邊緣面之法線或堆疊表面之法線較佳在80°與110°之間的角度範圍內，即，側面之法線與直接相鄰之邊緣面之法線彼此基本正交。該角度範圍較佳在85°與105°之間。
D1‧‧‧二極體
D2‧‧‧二極體
D3‧‧‧二極體
D4‧‧‧二極體
D5‧‧‧二極體
K1‧‧‧第一接觸部
K2‧‧‧第二接觸部
L‧‧‧光
OB‧‧‧第一二極體之表面
OS‧‧‧基板之上側
R‧‧‧邊緣
ST1‧‧‧第一堆疊
ST2‧‧‧第二堆疊
STU‧‧‧階台
SUB‧‧‧基板
T1‧‧‧穿隧二極體
T2‧‧‧穿隧二極體
T3‧‧‧穿隧二極體
T4‧‧‧穿隧二極體
VQ‧‧‧可擴展電壓源
VQ1‧‧‧第一堆疊之電源電壓
VQ2‧‧‧第二堆疊之電源電壓
VSUP1‧‧‧第一電壓連接端
VSUP2‧‧‧第二電壓連接端
以下參看附圖來詳細解釋本發明。在此，相同之部分標以相同名稱。所示之實施例係高度示意性的，即距離及側向延伸與垂直延伸並不按比例，只要沒有其他說明，相互間亦不具有可推導之幾何關係。其中展示：圖1：根據本發明的具有一個堆疊之可擴展電壓源之第一實施例，圖2：具有多個堆疊之可擴展電壓源之第二實施例，圖3：具有總共5個二極體之一實施形式，該5個二極體具有不同之吸收區厚度，圖4：具有環繞之台階形階台的堆疊。
圖1之圖表示第一實施例之示意圖，第一實施例具有可擴展電壓 源VQ，可擴展電壓源VQ具有第一堆疊ST1，該第一堆疊具有上側及下側且具有數量N等於3之二極體。第一堆疊ST1具有由第一二極體D1與第一穿隧二極體T1及第二二極體D2與第二穿隧二極體T2以及第三二極體D3構成之串聯電路。在堆疊ST1之上側上構造有第一電壓連接端VSUP1，且在堆疊ST1之下側上構造有第二電壓連接端VSUP2。在此，第一堆疊ST1之電源電壓VQ1由各個二極體D1至D3之部分電壓組成。為此，第一堆疊ST1經受光子流，即光L。
二極體D1至D3與穿隧二極體T1及T2之第一堆疊ST1經實施為單片構造、較佳由相同之半導體材料構成之塊。
在圖2之圖中構造第一堆疊ST1及第二堆疊ST2的有利之相互串聯之另一實施例。以下僅解釋與圖1之圖之區別。第二堆疊ST2如第一堆疊ST1那樣具有由三個二極體及構造在此等二極體之間的穿隧二極體組成之串聯電路。兩個堆疊ST1及ST2相互串聯地連接，從而只要兩個堆疊ST1與ST2經受光子流L，則第一堆疊ST1之電源電壓VQ1與第二堆疊ST2之電源電壓VQ2相加。
在一未展示之實施例中，兩個堆疊ST1及ST2彼此具有不同數量的分別以串聯電路連接之二極體。在另一未展示之實施例中，至少第一堆疊ST1及/或第二堆疊ST2具有多於三個的以串聯電路連接之二極體。由此能夠擴大電壓源VQ之電壓振幅。較佳地，數量N在4與8之間之範圍中。在另一未展示之實施例中，兩個堆疊ST1及ST2相互並聯連接。
在圖3之圖中展示了半導體層有利地相互串聯成第一堆疊ST1之實施例。以下僅解釋與圖1之圖的區別。第一堆疊ST1總共包括五個串聯連接之部分電壓源，該等部分電壓源經構造為二極體D1至D5。光L入射至第一二極體D1之表面OB上。表面OB幾乎或完全經照射。在兩個彼此相繼之二極體D1至D5之間分別構造有一個穿隧二極體T1 至T4。隨著各個二極體D1至D5離表面OB之距離增加，吸收區之厚度增大，從而最下面之二極體D5具有最厚之吸收區。第一堆疊ST1之總厚度總共小於等於12μm。在最下面之二極體D5的下面構造有基板SUB。
在圖4之圖中展示了半導體層有利地相互串聯成第一堆疊ST1之實施例，其具有環繞的台階形之階台。以下僅解釋與圖3之圖的區別。在第一堆疊ST1之表面OB上，在邊緣R處構造有金屬之第一連接接觸部K1。第一連接接觸部K1與第一電壓連接端VSUP1相連接，未圖示。基板SUB具有上側OS，其中基板SUB之上側OS材料封閉地與最下面的、即第五二極體D5連接。在此應理解，在將第五二極體配置在基板上以及使材料封閉地與基板之上側OS連接之前，在基板上磊晶產生一個薄的核化層及一個緩衝層。基板SUB之上側OS具有比第一堆疊ST1之下側上之面積更大的表面。由此構成了環繞的階台STU。階台STU之邊緣與第一堆疊ST1之直接相鄰之側面距離大於5μm且小於500μm，以附圖標記STU之長度展示。在基板SUB之下側上構造有整面的金屬之第二接觸部K2。第二連接接觸部K2與第二電壓連接端VSUP2相連接(未圖示)。
D1‧‧‧二極體
D2‧‧‧二極體
D3‧‧‧二極體
L‧‧‧光
ST1‧‧‧第一堆疊
T1‧‧‧穿隧二極體
T2‧‧‧穿隧二極體
VQ‧‧‧可擴展電壓源
VQ1‧‧‧第一堆疊之電源電壓
VSUP1‧‧‧第一電壓連接端
VSUP2‧‧‧第二電壓連接端

Claims (16)

  1. 一種可擴展電壓源(VQ)，該可擴展電壓源具有：數量為N的相互串聯連接之部分電壓源，該等部分電壓源構造為半導體二極體，其中，該等部分電壓源中之每一者具有一個半導體二極體(D1、D2、D3、D4、D5)，該半導體二極體具有p-n接面，該半導體二極體(D1、D2、D3、D4、D5)具有p摻雜之吸收層，該半導體二極體(D1、D2、D3、D4、D5)具有n吸收層，其中，該n吸收層藉由n摻雜之鈍化層鈍化，該n摻雜之鈍化層具有比該n吸收層之帶隙更大的帶隙，且各個部分電壓源之部分電源電壓相互間具有小於20%之偏差，在每兩個彼此相繼的部分電壓源之間構造有一個穿隧二極體(T1、T2；T3、T4)，其中，該穿隧二極體(T1、T2；T3、T4)具有多個半導體層，該等半導體層具有比該p/n吸收層之帶隙更大的帶隙，且具有更大帶隙之半導體層分別由具有經改變的化學計量之材料及/或不同於該半導體二極體(D1、D2、D3、D4、D5)之該p/n吸收層之元素成分的材料組成，該等部分電壓源及該穿隧二極體(T1、T2；T3、T4)單片地整合在一起且共同構成具有上側及下側之第一堆疊(ST1)，且該等部分電壓源之數量N大於等於3，在以光(L)照射該第一堆疊(ST1)之情況下，其中，該光(L)在該上側處入射至該第一堆疊(ST1)上的該表面(OB)上，且在堆疊上側處經照射之表面(OB)之尺寸基本上相當於該第一堆疊在上側處之面之尺寸，且該第一堆疊(ST1)具有小於12μm之總厚度，在300K之情況下，只要該第一堆疊(ST1)經光(L)照射，該第一堆疊(ST1)即具有大於3伏特之電源電壓(VQ1)，其中，在自該第 一堆疊(ST1)之上側向該堆疊之下側的光入射方向上，半導體二極體之p吸收層及n吸收層之總厚度自最上面之二極體(D1)向著最下面之二極體(D3至D5)增加，其特性在於，該等半導體二極體(D1、D2、D3、D4)之每個p吸收層藉由p摻雜之鈍化層鈍化，該p摻雜之鈍化層具有比該p吸收層之帶隙更大的帶隙，且該電壓源在該堆疊之下側附近具有環繞的、台階形之邊緣。
  2. 如請求項1之可擴展電壓源(VQ)，其中，該等部分電壓源之部分電源電壓相互間具有小於10%之偏差。
  3. 如請求項1或2之可擴展電壓源(VQ)，其中，該等半導體二極體(D1、D2、D3、D4、D5)分別具有相同之半導體材料。
  4. 如前述請求項1或2之可擴展電壓源(VQ)，其中，該第一堆疊(ST1)配置在基板(SUB)上，且該基板(SUB)包括半導體材料。
  5. 如前述請求項1或2之可擴展電壓源(VQ)，其中，該第一堆疊(ST1)具有小於2mm2或小於1mm2之基面。
  6. 如請求項5之可擴展電壓源(VQ)，其中，該基面以四邊形構造。
  7. 如前述請求項1或2之可擴展電壓源(VQ)，其中，在該第一堆疊(ST1)之上側上構造有第一電壓連接端(VSUP1)，該第一電壓連接端經構造為該邊緣(R)附近的環繞之第一金屬接觸部(K1)或經構造為該邊緣(R)處之單個接觸面(K1)。
  8. 如前述請求項1或2之可擴展電壓源(VQ)，其中，在該第一堆疊(ST1)之下側上構造有第二電壓連接端(VSUP2)。
  9. 如請求項4之可擴展電壓源(VQ)，其中，該第二電壓連接端(VSUP2)構造成穿過該基板。
  10. 如前述請求項1或2之可擴展電壓源(VQ)，其中，構造有第二堆 疊(ST2)，且該第一堆疊(ST1)與該第二堆疊(ST2)係並排配置在共同載體上，且該兩個堆疊(ST1、ST2)相互串聯地連接，從而該第一堆疊(ST1)之電源電壓(VQ1)與該第二堆疊(ST2)之電源電壓(VQ2)相加。
  11. 如前述請求項1或2之可擴展電壓源(VQ)，其中，在各個二極體之p吸收層與n吸收層之間構造有本質層。
  12. 如前述請求項1或2之可擴展電壓源(VQ)，其中，該半導體材料及/或該基板係由III-V族材料組成。
  13. 如前述請求項1或2之可擴展電壓源(VQ)，其中，該基板包括鍺或砷化鎵。
  14. 如前述請求項1或2之可擴展電壓源(VQ)，其中，在該堆疊之最下面之半導體二極體的下面構造有半導體鏡。
  15. 如前述請求項1或2之可擴展電壓源(VQ)，其中，該堆疊(ST1)之半導體層同時包括含有砷化物之層及含有磷化物之層。
  16. 如前述請求項1或2之可擴展電壓源(VQ)，其中，該邊緣之棱邊與該堆疊的直接相鄰之側面距離至少5μm且最大500μm。
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DE102019003069B4 (de) * 2019-04-30 2023-06-01 Azur Space Solar Power Gmbh Stapelförmige hochsperrende lll-V-Halbleiterleistungsdioden

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4206002A (en) * 1976-10-19 1980-06-03 University Of Pittsburgh Graded band gap multi-junction solar energy cell
US4127862A (en) 1977-09-06 1978-11-28 Bell Telephone Laboratories, Incorporated Integrated optical detectors
US4179702A (en) * 1978-03-09 1979-12-18 Research Triangle Institute Cascade solar cells
JPS55125680A (en) * 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
US4688068A (en) * 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
US4598164A (en) * 1983-10-06 1986-07-01 Exxon Research And Engineering Co. Solar cell made from amorphous superlattice material
US4667059A (en) * 1985-10-22 1987-05-19 The United States Of America As Represented By The United States Department Of Energy Current and lattice matched tandem solar cell
US4631352A (en) * 1985-12-17 1986-12-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells
JPS62234379A (ja) * 1986-04-04 1987-10-14 Kanegafuchi Chem Ind Co Ltd 半導体装置
JP2719230B2 (ja) * 1990-11-22 1998-02-25 キヤノン株式会社 光起電力素子
US5223043A (en) * 1991-02-11 1993-06-29 The United States Of America As Represented By The United States Department Of Energy Current-matched high-efficiency, multijunction monolithic solar cells
US5298086A (en) * 1992-05-15 1994-03-29 United Solar Systems Corporation Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby
US5800630A (en) * 1993-04-08 1998-09-01 University Of Houston Tandem solar cell with indium phosphide tunnel junction
US5407491A (en) * 1993-04-08 1995-04-18 University Of Houston Tandem solar cell with improved tunnel junction
US6239354B1 (en) 1998-10-09 2001-05-29 Midwest Research Institute Electrical isolation of component cells in monolithically interconnected modules
US6150603A (en) * 1999-04-23 2000-11-21 Hughes Electronics Corporation Bilayer passivation structure for photovoltaic cells
JP3657143B2 (ja) * 1999-04-27 2005-06-08 シャープ株式会社 太陽電池及びその製造方法
US6316715B1 (en) * 2000-03-15 2001-11-13 The Boeing Company Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material
US6864414B2 (en) * 2001-10-24 2005-03-08 Emcore Corporation Apparatus and method for integral bypass diode in solar cells
JP2003218374A (ja) * 2002-01-23 2003-07-31 Sharp Corp Ｉｉｉ−ｖ族太陽電池
US20060162768A1 (en) * 2002-05-21 2006-07-27 Wanlass Mark W Low bandgap, monolithic, multi-bandgap, optoelectronic devices
US7122734B2 (en) * 2002-10-23 2006-10-17 The Boeing Company Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
US6951819B2 (en) * 2002-12-05 2005-10-04 Blue Photonics, Inc. High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
US7488890B2 (en) * 2003-04-21 2009-02-10 Sharp Kabushiki Kaisha Compound solar battery and manufacturing method thereof
DE102004023856B4 (de) * 2004-05-12 2006-07-13 Rwe Space Solar Power Gmbh Solarzelle mit integrierter Schutzdiode und zusätzlich auf dieser angeordneten Tunneldiode
US20060048811A1 (en) 2004-09-09 2006-03-09 Krut Dimitri D Multijunction laser power converter
DE102004044061A1 (de) 2004-09-11 2006-04-20 Rwe Space Solar Power Gmbh Solarzellenanordung sowie Verfahren zum Verschalten eines Solarzellenstrings
DE102005000767A1 (de) * 2005-01-04 2006-07-20 Rwe Space Solar Power Gmbh Monolithische Mehrfach-Solarzelle
JP4868746B2 (ja) * 2005-02-16 2012-02-01 シャープ株式会社 薄膜化合物太陽電池およびその製造方法
EP1878060A2 (en) * 2005-05-03 2008-01-16 University Of Delaware Ultra and very-high efficiency solar cells
US20100147381A1 (en) * 2005-07-13 2010-06-17 Haney Michael W Ultra and very high efficiency solar cells
US8795854B2 (en) * 2005-08-01 2014-08-05 Amit Goyal Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates
US8742251B2 (en) 2006-12-20 2014-06-03 Jds Uniphase Corporation Multi-segment photovoltaic power converter with a center portion
JP2008177212A (ja) * 2007-01-16 2008-07-31 Nec Corp 半導体受光素子
US9508890B2 (en) * 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8895342B2 (en) * 2007-09-24 2014-11-25 Emcore Solar Power, Inc. Heterojunction subcells in inverted metamorphic multijunction solar cells
US20090188554A1 (en) * 2008-01-25 2009-07-30 Emcore Corporation III-V Compound Semiconductor Solar Cell for Terrestrial Solar Array
EP2249401A1 (en) * 2008-02-21 2010-11-10 Sharp Kabushiki Kaisha Solar cell and method for manufacturing solar cell
US20090215215A1 (en) * 2008-02-21 2009-08-27 Sunlight Photonics Inc. Method and apparatus for manufacturing multi-layered electro-optic devices
US8075723B1 (en) * 2008-03-03 2011-12-13 Stion Corporation Laser separation method for manufacture of unit cells for thin film photovoltaic materials
US20090325340A1 (en) * 2008-06-30 2009-12-31 Mohd Aslami Plasma vapor deposition system and method for making multi-junction silicon thin film solar cell modules and panels
WO2010009436A2 (en) * 2008-07-17 2010-01-21 Uriel Solar Inc. High power efficiency, large substrate, polycrystalline cdte thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
US9080425B2 (en) * 2008-10-17 2015-07-14 Foro Energy, Inc. High power laser photo-conversion assemblies, apparatuses and methods of use
US8916769B2 (en) * 2008-10-01 2014-12-23 International Business Machines Corporation Tandem nanofilm interconnected semiconductor wafer solar cells
US8138410B2 (en) * 2008-10-01 2012-03-20 International Business Machines Corporation Optical tandem photovoltaic cell panels
US8912428B2 (en) * 2008-10-22 2014-12-16 Epir Technologies, Inc. High efficiency multijunction II-VI photovoltaic solar cells
US20100122764A1 (en) * 2008-11-14 2010-05-20 Emcore Solar Power, Inc. Surrogate Substrates for Inverted Metamorphic Multijunction Solar Cells
JP5570736B2 (ja) * 2009-02-06 2014-08-13 シャープ株式会社 化合物半導体太陽電池の製造方法
US8299351B2 (en) * 2009-02-24 2012-10-30 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Epitaxial growth of III-V compounds on (111) silicon for solar cells
US9722131B2 (en) * 2009-03-16 2017-08-01 The Boeing Company Highly doped layer for tunnel junctions in solar cells
US10505062B2 (en) * 2009-07-09 2019-12-10 Faquir Chand Jain High efficiency tandem solar cells and a method for fabricating same
TWI409959B (zh) * 2009-12-07 2013-09-21 Epistar Corp 太陽能電池元件及其裝置
JP5215284B2 (ja) * 2009-12-25 2013-06-19 シャープ株式会社 多接合型化合物半導体太陽電池
DE102010001420A1 (de) 2010-02-01 2011-08-04 Robert Bosch GmbH, 70469 III-V-Halbleiter-Solarzelle
US8852994B2 (en) * 2010-05-24 2014-10-07 Masimo Semiconductor, Inc. Method of fabricating bifacial tandem solar cells
US11417788B2 (en) * 2010-11-19 2022-08-16 The Boeing Company Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells
DE102011000521A1 (de) * 2011-02-04 2012-08-23 Azur Space Solar Power Gmbh Mehrfachsolarzelle sowie Verfahren zur Herstellung einer solchen
KR20140040121A (ko) * 2011-03-29 2014-04-02 캘리포니아 인스티튜트 오브 테크놀로지 그래핀-기반 다중-접합 가요성 태양 전지
CN103168368A (zh) * 2011-04-27 2013-06-19 松下电器产业株式会社 利用太阳能电池产生电力的方法
US20120285519A1 (en) * 2011-05-10 2012-11-15 Emcore Solar Power, Inc. Grid design for iii-v compound semiconductor cell
US10340401B2 (en) * 2011-09-22 2019-07-02 The Boeing Company Multi-layer back surface field layer in a solar cell structure
CN104303320A (zh) * 2011-10-21 2015-01-21 犹他大学研究基金会 均质多带隙装置
US8912617B2 (en) * 2011-10-27 2014-12-16 Solar Junction Corporation Method for making semiconductor light detection devices
WO2013074530A2 (en) * 2011-11-15 2013-05-23 Solar Junction Corporation High efficiency multijunction solar cells
US9263611B2 (en) * 2011-11-17 2016-02-16 Solar Junction Corporation Method for etching multi-layer epitaxial material
JP5422082B2 (ja) 2011-12-14 2014-02-19 パナソニック株式会社 太陽電池及びその製造方法
EP2618385A1 (de) * 2012-01-20 2013-07-24 AZUR SPACE Solar Power GmbH Halbzeug einer Mehrfachsolarzelle und Verfahren zur Herstellung einer Mehrfachsolarzelle
CN102651416A (zh) * 2012-05-18 2012-08-29 中国科学院苏州纳米技术与纳米仿生研究所 三结叠层GaAs激光光伏电池及其制备方法
WO2013192559A1 (en) * 2012-06-22 2013-12-27 Izar Solar Inc Manufacturing semiconductor-based multi-junction photovoltaic devices
US9099595B2 (en) * 2012-09-14 2015-08-04 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9985160B2 (en) * 2012-09-14 2018-05-29 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9997659B2 (en) * 2012-09-14 2018-06-12 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
DE112013006161A5 (de) * 2012-12-21 2015-09-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Justagetolerante photovoltaische Zelle
US9530911B2 (en) * 2013-03-14 2016-12-27 The Boeing Company Solar cell structures for improved current generation and collection
ITMI20131297A1 (it) * 2013-08-01 2015-02-02 Cesi Ct Elettrotecnico Sperim Entale Italian Cella fotovoltaica con banda proibita variabile
CN105706013B (zh) * 2013-09-11 2018-07-03 国立研究开发法人宇宙航空研究开发机构 太阳电池调整系统、相关方法及最小电流检测及控制系统
CN103594539B (zh) * 2013-10-22 2016-02-10 扬州乾照光电有限公司 一种柔性多结GaAs太阳电池及其制备方法
CN103545389B (zh) * 2013-10-24 2016-03-30 瑞德兴阳新能源技术有限公司 一种多结聚光砷化镓太阳能电池及其制备方法
US20150295114A1 (en) * 2014-04-11 2015-10-15 Sempruis, Inc. Multi-junction power converter with photon recycling
US20170018675A1 (en) * 2014-04-11 2017-01-19 Semprius, Inc. Multi-junction photovoltaic micro-cell architectures for energy harvesting and/or laser power conversion

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DE102015006379B4 (de) 2022-03-17
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EP3096361B1 (de) 2022-03-09
JP2016219012A (ja) 2016-12-22
CN113745210A (zh) 2021-12-03
TWI649891B (zh) 2019-02-01
US20160343704A1 (en) 2016-11-24
EP3096361A1 (de) 2016-11-23
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