CN106169468A - 可扩展的电压源 - Google Patents

可扩展的电压源 Download PDF

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CN106169468A
CN106169468A CN201610322917.2A CN201610322917A CN106169468A CN 106169468 A CN106169468 A CN 106169468A CN 201610322917 A CN201610322917 A CN 201610322917A CN 106169468 A CN106169468 A CN 106169468A
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voltage source
stacking
extendible
layer
diode
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D·富尔曼
W·古特
V·科伦科
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Azur Space Solar Power GmbH
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Azur Space Solar Power GmbH
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Abstract

一种可扩展的电压源，具有相互串联连接的部分电压源，其中的每一个具有一个半导体二极管，每个半导体二极管具有p掺杂的吸收层，p吸收层被p掺杂的钝化层钝化，p掺杂的钝化层具有比p吸收层的带隙更大的带隙，半导体二极管具有n吸收层，n吸收层被n掺杂的钝化层钝化，n掺杂的钝化层具有比n吸收层的带隙更大的带隙；在每两个彼此相继的部分电压源之间构造有一个隧道二极管，其具有多个半导体层，所述半导体层具有比p/n吸收层的带隙更大的带隙；部分电压源和隧道二极管单片地集成在一起且共同构成第一堆叠，在从堆叠的上侧向着下侧的光入射方向上，半导体二极管的p吸收层和n吸收层的总厚度从最上面的二极管向着最下面的二极管增加。

Description

可扩展的电压源
技术领域
本发明涉及一种可扩展的(skalierbar)电压源。
背景技术
由US 4 127 862、US 6 239 354 B1、DE 10 2010 001 420 A1、由NaderM.Kalkhoran等人写的文章《Cobalt disilicide intercell ohmic contacts formultijunction photovoltaic energy converters》(用于多结光电能量转换器的硅化钴电池间的欧姆接触)，应用物理学快报(Appl.Phys.Lett.)64，1980(1994)以及由A.Bett等人写的文章《III-V Solar cells under monochromatic illumination》(单色光照射下的III-V族太阳能电池)，2008年第33届IEEE光电专家会议(PVSC'08，33rd IEEE)论文集，第1-5页，ISBN：978-1-4244-1640-0已知了可扩展的电压源或由III-V族材料构成的太阳能电池。
发明内容
在此背景下，本发明的任务在于：给出一种装置，所述装置对现有技术作出进一步改进。
所述任务通过具有权利要求1的特征的可扩展的电压源来解决。本发明的有利的实施方式是从属权利要求的主题。
根据本发明的主题提出可扩展的电压源，所述可扩展的电压源具有数量为N的相互串联连接的部分电压源，所述部分电压源构造为半导体二极管，其中所述部分电压源中的每一个具有一个半导体二极管，所述半导体二极管具有p-n结，所述半导体二极管具有p掺杂的吸收层(Absorptionsschicht)，其中p吸收层被p掺杂的钝化层钝化，所述p掺杂的钝化层具有比所述p吸收层的带隙更大的带隙，所述半导体二极管具有n吸收层，其中所述n吸收层被n掺杂的钝化层钝化，所述n掺杂的钝化层具有比所述n吸收层的带隙更大的带隙，并且各个部分电压源的部分电源电压相互间具有小于20％的偏差；在每两个彼此相继的部分电压源之间构造有一个隧道二极管，其中所述隧道二极管具有多个半导体层，所述半导体层具有比所述p/n吸收层的带隙更大的带隙，并且具有更大带隙的半导体层分别由具有经改变的化学计量的材料和/或不同于所述半导体二极管的p/n吸收层的元素成分的材料组成；所述部分电压源和所述隧道二极管单片地集成在一起并且共同构成具有上侧及下侧的第一堆叠(Stapel)，并且所述部分电压源的数量N大于等于3；光在上侧处入射到所述第一堆叠上，并且堆叠上侧处的照射面的尺寸基本上是所述第一堆叠在上侧处的面的尺寸，并且所述第一堆叠具有小于12μm的总厚度；在300K的情况下，只要所述第一堆叠被光子流照射，则所述第一堆叠具有大于3伏特的电源电压，其中在从所述第一堆叠的上侧向所述第一堆叠的下侧的光入射方向上，半导体二极管的p吸收层和n吸收层的总厚度从最上面的二极管向着最下面的二极管增加，并且所述电压源在堆叠的下侧附近具有环绕的、台阶形的边缘。
要注意的是，表述“基本上”结合堆叠上侧处的照射面与第一堆叠在上侧处的面的尺寸的比较应理解为，面积的区别尤其小于20％，或者优选小于10％，或者优选小于5％，或者最优选两个面积相等。
还要注意的是，用于照射堆叠上侧的“光”的表述应理解为具有吸收层的吸收范围内的波长光谱的光。可以理解，具有一个确定的、即吸收的波长的——也就是吸收层的吸收范围内的波长的单色光也是适合的。
可以理解，优选以确定波长的光照射所述第一堆叠的整个上侧，即整个表面或几乎整个表面。应注意，深入的研究以出人意料的方式表明：与现有技术不同地，借助当前的单片堆叠方式以有利的方式得到了3V以上的电源电压。
根据本发明的装置的一个优点在于：通过多个部分电压源的串联连接也能够制造具有4伏以上或更大的电压值的电压源，借助单片集成结构能够制造简单的且成本上有利的及可靠的电压源。另一优点是：借助堆叠形式的布置与迄今硅二极管的侧向布置相比实现了较大的面积节省。尤其由发射二极管或光源仅需照射所述堆叠的小得多的接收面。
在一种扩展构型中，各个部分电压源的部分电源电压相互间偏差小于10％。由此实质地改进了作为可扩展的电压源、尤其作为参考电压源的适用性。可以理解，术语“可扩展”涉及整个堆叠的电源电压的幅值。
在另一种扩展构型中，所述半导体二极管分别具有相同的半导体材料，其中，在此二极管的半导体材料具有相同的晶体组成(kristalline Zusammensetzung)，优选化学计量几乎相同，或者优选化学计量完全相同。同样有利的是，所述第一堆叠被布置在衬底上。在一种实施方式中，所述半导体材料和/或所述衬底由III-V族材料组成。尤其优选的是，所述衬底包括锗或砷化镓，和/或，所述衬底上的半导体层具有砷和/或磷。换句话说，所述半导体层包括含砷的层和含磷的层，即由GaAs或AlGaAs或InGaAs组成的层作为砷化物层的示例以及InGaP作为磷化物层的示例。
优选的是，在所述第一堆叠的下侧上构造第二电压连接端，尤其是，所述第二电压连接端构造成穿过衬底。
在另一种实施方式中，所述半导体二极管由与所述衬底相同的材料组成。优点是，尤其这两部分的膨胀系数相同。有利的是，所述半导体二极管基本上由III-V族材料组成。尤其优选地使用GaAs。
在一种优选的实施方式中，在所述第一堆叠的上侧上构造有第一电压连接端，所述第一电压连接端被构造为边缘附近的环绕的金属接触部或被构造为边缘处的单个接触面。
此外优选的是，所述第一堆叠具有小于2mm2或小于1mm2的基面。研究已表明：有利的是，所述基面以四边形构造。优选所述堆叠的基面以正方形构造。
进一步的研究已表明，为了达到特别高的电压有利的是，构造第二堆叠并且将两个堆叠相互串联地连接，从而所述第一堆叠的电源电压和所述第二堆叠的电源电压相加。优选地，所述第一堆叠与所述第二堆叠并排布置在共同的载体上。
在一种扩展构型中，所述第一堆叠的电源电压与所述第二堆叠的电源电压偏差小于15％。
此外优选的是，在堆叠的最下面的半导体二极管的下面构造有半导体镜。研究已表明：能够将多个堆叠并排构造在一个半导体晶片或半导体衬底片上，其方式是，在整面地、优选外延地制造所述层之后，实施所谓的台面蚀刻为此，借助掩膜工艺产生漆掩膜，然后优选实施湿化学蚀刻以产生台面沟槽。所述台面蚀刻优选终止在衬底中或终止在衬底上。
在一种实施方式中，在各个二极管的p吸收层与n吸收层之间构造有本征层。这里，本征层应理解为具有低于1E16 1/cm2、优选小于5E15 1/cm2、最优选小于1.5E15 1/cm2的掺杂的半导体层。
在一种扩展构型中优选的是，每个堆叠在下侧附近具有环绕的、台阶形的边缘，其中在两个堆叠直接相邻的情况下在堆叠结构的外侧上构成环绕的边缘作为共同的环绕边缘，从而所述电压源具有环绕的边缘。
边缘优选是阶台形的或者构造为阶台。在此，边缘或阶台的表面优选大部分具有平面，其中，边缘或阶台的表面的法线构造为平行或几乎平行于第一堆叠的表面的法线或者相应堆叠的表面的法线。要注意的是，边缘或阶台的侧面构造为基本或恰好垂直于边缘或阶台的表面。
边缘或阶台的棱边分别与第一堆叠的四个侧面中的每一个或者分别多个堆叠的侧面距离至少5μm且最大500μm。棱边到直接相邻的侧面的距离范围分别优选在10μm与300μm之间。所述距离范围尤其在50μm与250μm之间。
第一堆叠的侧面和尤其堆叠的所有侧面优选构造为平的，并且尤其构造为垂直的或几乎垂直的。侧面上的法线相对于相邻边缘面的法线或者堆叠表面的法线优选在80°与110°之间的角度范围内，即，侧面的法线与直接相邻的边缘面的法线彼此基本正交。所述角度范围优选在85°与105°之间。
附图说明
以下参照附图来详细解释本发明。在此，相同的部分标以相同的名称。所示出的实施方式是高度示意性的，即距离和侧向延展与垂直延展不是按比例的，只要没有其他说明，相互间也不具有可推导的几何关系。其中示出了：
图1：根据本发明的具有一个堆叠的可扩展的电压源的第一实施方式，
图2：具有多个堆叠的可扩展的电压源的第二实施方式，
图3：具有总共5个二极管的一种实施形式，所述5个二极管具有不同的吸收区厚度，
图4：具有环绕的台阶形的阶台的堆叠。
具体实施方式
图1的示图表示第一实施方式的示意图，所述第一实施方式具有可扩展的电压源VQ，所述可扩展的电压源VQ具有第一堆叠ST1，所述第一堆叠具有上侧和下侧并且具有数量N等于3的二极管。所述第一堆叠ST1具有由第一二极管D1和第一隧道二极管T1和第二二极管D2和第二隧道二极管T2和第三二极管D3构成的串联电路。在堆叠ST1的上侧处构造有第一电压连接端VSUP1，并且在堆叠ST1的下侧处构造有第二电压连接端VSUP2。在此，所述第一堆叠ST1的电源电压VQ1由各个二极管D1至D3的部分电压组成。为此，所述第一堆叠ST1经受光子流——即光L。
二极管D1至D3与隧道二极管T1及T2的第一堆叠ST1被实施为单片构造的、优选由相同的半导体材料构成的块。
在图2的示图中构造第一堆叠ST1和第二堆叠ST2的有利的相互串联的另一种实施方式。以下仅解释与图1的示图的区别。所述第二堆叠ST2如所述第一堆叠ST1那样具有由三个二极管和构造在这些二极管之间的隧道二极管组成的串联电路。两个堆叠ST1及ST2相互串联地连接，从而只要两个堆叠ST1与ST2经受光子流L，则所述第一堆叠ST1的电源电压VQ1与所述第二堆叠ST2的电源电压VQ2相加。
在一种未示出的实施方式中，所述两个堆叠ST1及ST2彼此具有不同数量的分别以串联电路连接的二极管。在另一种未示出的实施方式中，至少第一堆叠ST1和/或第二堆叠ST2具有多于三个以串联电路连接的二极管。由此能够扩展电压源VQ的电压幅值。优选地，数量N在4与8之间的范围中。在另一种未示出的实施方式中，所述两个堆叠ST1及ST2相互并联连接。
在图3的示图中示出了半导体层有利地相互串联成所述第一堆叠ST1的实施方式。以下仅解释与图1的示图的区别。所述第一堆叠ST1总共包括五个串联连接的部分电压源，所述部分电压源被构造为二极管D1至D5。光L入射到第一二极管D1的表面OB上。所述表面OB几乎或完全被照射。在两个彼此相继的二极管D1-D5之间分别构造有一个隧道二极管T1-T4。随着各个二极管D1至D5离所述表面OB的距离增加，吸收区的厚度增大，从而最下面的二极管D5具有最厚的吸收区。所述第一堆叠ST1的总厚度总共小于等于12μm。在最下面的二极管D5的下面构造有衬底SUB。
在图4的示图中示出了半导体层有利地相互串联成所述第一堆叠ST1的实施方式，其具有环绕的台阶形的阶台。以下仅解释与图3的示图的区别。在所述第一堆叠ST1的表面OB上，在边缘R处构造有金属的第一连接接触部K1。所述第一连接接触部K1与所述第一电压连接端VSUP1相连接，未示出。所述衬底SUB具有上侧OS，其中所述衬底SUB的上侧OS材料锁合地与最下面的、即第五二极管D5连接。在此应理解，在将第五二极管布置在所述衬底上以及材料锁合地与所述衬底的上侧OS连接之前，在所述衬底上外延地产生一个薄的核化层和一个缓冲层。所述衬底SUB的上侧OS具有比所述第一堆叠ST1的下侧处的面更大的表面。由此构成了环绕的阶台STU。所述阶台STU的边缘与第一堆叠ST1的直接相邻的侧面距离大于5μm且小于500μm，以附图标记STU的长度示出。在所述衬底SUB的下侧处构造有整面的金属的第二接触部K2。所述第二连接接触部K2与所述第二电压连接端VSUP2相连接(未示出)。

Claims (16)

1.一种可扩展的电压源(VQ)，所述可扩展的电压源具有：
数量为N的相互串联连接的部分电压源，所述部分电压源构造为半导体二极管，其中，所述部分电压源中的每一个具有一个半导体二极管(D1，D2，D3，D4，D5)，所述半导体二极管具有p-n结，所述半导体二极管(D1，D2，D3，D4，D5)具有p掺杂的吸收层，所述半导体二极管(D1，D2，D3，D4，D5)具有n吸收层，其中，所述n吸收层被n掺杂的钝化层钝化，所述n掺杂的钝化层具有比所述n吸收层的带隙更大的带隙，并且各个部分电压源的部分电源电压相互间具有小于20％的偏差，
在每两个彼此相继的部分电压源之间构造有一个隧道二极管(T1，T2；T3，T4)，其中，所述隧道二极管(T1，T2；T3，T4)具有多个半导体层，所述半导体层具有比所述p/n吸收层的带隙更大的带隙，并且具有更大带隙的半导体层分别由具有经改变的化学计量的材料和/或不同于所述半导体二极管(D1，D2，D3，D4，D5)的所述p/n吸收层的元素成分的材料组成，
所述部分电压源和所述隧道二极管(T1，T2；T3，T4)单片地集成在一起并且共同构成具有上侧和下侧的第一堆叠(ST1)，并且所述部分电压源的数量N大于等于3，
在以光(L)照射所述第一堆叠(ST1)的情况下，其中，所述光(L)在所述上侧处入射到所述第一堆叠(ST1)上所述表面(OB)上，并且在堆叠上侧处经照射的表面(OB)的尺寸基本上相当于所述第一堆叠在上侧处的面的尺寸，并且所述第一堆叠(ST1)具有小于12μm的总厚度，
在300K的情况下，只要所述第一堆叠(ST1)被光(L)照射，则所述第一堆叠(ST1)具有大于3伏特的电源电压(VQ1)，其中，在从所述第一堆叠(ST1)的上侧向所述堆叠的下侧的光入射方向上，半导体二极管的p吸收层和n吸收层的总厚度从最上面的二极管(D1)向着最下面的二极管(D3-D5)增加，
其特征在于，
所述半导体二极管(D1，D2，D3，D4)的每个p吸收层被p掺杂的钝化层钝化，所述p掺杂的钝化层具有比所述p吸收层的带隙更大的带隙，并且所述电压源在所述堆叠的下侧附近具有环绕的、台阶形的边缘。
2.根据权利要求1所述的可扩展的电压源(VQ)，其特征在于，所述部分电压源的部分电源电压相互间具有小于10％的偏差。
3.根据权利要求1或2所述的可扩展的电压源(VQ)，其特征在于，所述半导体二极管(D1，D2，D3，D4，D5)分别具有相同的半导体材料。
4.根据以上权利要求中任一项所述的可扩展的电压源(VQ)，其特征在于，所述第一堆叠(ST1)布置在衬底(SUB)上，并且所述衬底(SUB)包括半导体材料。
5.根据以上权利要求中任一项所述的可扩展的电压源(VQ)，其特征在于，所述第一堆叠(ST1)具有小于2mm2或小于1mm2的基面。
6.根据权利要求5所述的可扩展的电压源(VQ)，其特征在于，所述基面以四边形构造。
7.根据以上权利要求中任一项所述的可扩展的电压源(VQ)，其特征在于，在所述第一堆叠(ST1)的上侧上构造有第一电压连接端(VSUP1)，所述第一电压连接端被构造为所述边缘(R)附近的环绕的第一金属接触部(K1)或被构造为所述边缘(R)处的单个接触面(K1)。
8.根据以上权利要求中任一项所述的可扩展的电压源(VQ)，其特征在于，在所述第一堆叠(ST1)的下侧上构造有第二电压连接端(VSUP2)。
9.根据权利要求4所述的可扩展的电压源(VQ)，其特征在于，所述第二电压连接端(VSUP2)构造成穿过所述衬底。
10.根据以上权利要求中任一项所述的可扩展的电压源(VQ)，其特征在于，构造有第二堆叠(ST2)，并且所述第一堆叠(ST1)与所述第二堆叠(ST2)被并排布置在共同的载体上，并且两个堆叠(ST1，ST2)相互串联地连接，从而所述第一堆叠(ST1)的电源电压(VQ1)与所述第二堆叠(ST2)的电源电压(VQ2)相加。
11.根据以上权利要求中任一项所述的可扩展的电压源(VQ)，其特征在于，在各个二极管的p吸收层与n吸收层之间构造有本征层。
12.根据以上权利要求中任一项所述的可扩展的电压源(VQ)，其特征在于，所述半导体材料和/或所述衬底由III-V族材料组成。
13.根据以上权利要求中任一项所述的可扩展的电压源(VQ)，其特征在于，所述衬底包括锗或砷化镓。
14.根据以上权利要求中任一项所述的可扩展的电压源(VQ)，其特征在于，在所述堆叠的最下面的半导体二极管的下面构造有半导体镜。
15.根据以上权利要求中任一项所述的可扩展的电压源(VQ)，其特征在于，所述堆叠(ST1)的半导体层同时包括含有砷化物的层和含有磷化物的层。
16.根据以上权利要求中任一项所述的可扩展的电压源(VQ)，其特征在于，所述边缘的棱边与所述堆叠的直接相邻的侧面距离至少5μm且最大500μm。
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