JP6312161B2 - スケーラブルな電圧源 - Google Patents
スケーラブルな電圧源 Download PDFInfo
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- JP6312161B2 JP6312161B2 JP2016099317A JP2016099317A JP6312161B2 JP 6312161 B2 JP6312161 B2 JP 6312161B2 JP 2016099317 A JP2016099317 A JP 2016099317A JP 2016099317 A JP2016099317 A JP 2016099317A JP 6312161 B2 JP6312161 B2 JP 6312161B2
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- 239000004065 semiconductor Substances 0.000 claims description 41
- 238000010521 absorption reaction Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000011161 development Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000011835 investigation Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
Claims (16)
- スケーラブルな電圧源(VQ)であって、
・前記スケーラブルな電圧源(VQ)は、相互に直列接続された、半導体ダイオードとして形成されているN個の部分電圧源を有しており、各部分電圧源は、pn接合部を有する半導体ダイオード(D1,D2,D3,D4,D5)を有しており、前記半導体ダイオード(D1,D2,D3,D4,D5)は、p型ドーピングされた吸収層を有しており、前記半導体ダイオード(D1,D2,D3,D4,D5)は、n型吸収層を有しており、前記n型吸収層は、前記n型吸収層のバンドギャップよりも大きいバンドギャップを有するn型ドーピングされたパシベーション層によってパシベーションされており、
個々の前記部分電圧源の部分電源電圧間の相違は20%未満であり、
・連続する2つの部分電圧源の間にそれぞれ、1つのトンネルダイオード(T1,T2;T3,T4)が形成されており、前記トンネルダイオード(T1,T2,T3,T4)は、前記p/n型吸収層のバンドギャップよりも高いバンドギャップを有している複数の半導体層を有しており、相対的に高い前記バンドギャップを有している前記半導体層は、それぞれ、前記半導体ダイオード(D1,D2,D3,D4,D5)の前記p/n型吸収層とは異なる化学量論組成、および/または、前記半導体ダイオード(D1,D2,D3,D4,D5)の前記p/n型吸収層とは異なる元素組成を有する材料から成り、
・前記複数の部分電圧源と前記複数のトンネルダイオード(T1,T2,T3,T4)とはまとめて、モノリシックに集積されており、上側と下側とを有する第1の積層体(ST1)をともに形成し、前記部分電圧源の数Nは、3以上であり、
・光(L)による前記第1の積層体(ST1)の照明時に、前記光(L)は、前記上側で、前記第1の積層体(ST1)の表面(OB)に入射し、前記積層体上側の、光が照射される前記表面(OB)の大きさは、実質的に、前記上側での前記第1の積層体の面積の大きさに相当し、
前記第1の積層体(ST1)は、12μm未満の厚さの総計を有しており、
・前記第1の積層体(ST1)に、光(L)が照射されている場合には、300Kにおいて、前記第1の積層体(ST1)は、3ボルト超の電源電圧(VQ1)を有し、前記第1の積層体(ST1)の前記上側から前記第1の積層体(ST1)の前記下側へと向かう光入射方向において、半導体ダイオードの前記p型吸収層と前記n型吸収層との厚さの総計は、最も上側に位置するダイオード(D1)から最も下側に位置するダイオード(D3からD5)へ向かって増大する形式のスケーラブルな電圧源(VQ)において、
前記半導体ダイオード(D1,D2,D3,D4,D5)の各p型吸収層は、前記p型吸収層のバンドギャップよりも大きいバンドギャップを有する、p型ドーピングされたパシベーション層によってパシベーションされており、前記電圧源は、前記第1の積層体(ST1)の前記下側の近傍において、周囲を取り囲んでいる、段丘状の縁部を有している、
ことを特徴とするスケーラブルな電圧源(VQ)。 - 複数の前記部分電圧源の部分電源電圧間の相違は、10%未満である、
請求項1記載のスケーラブルな電圧源(VQ)。 - 前記半導体ダイオード(D1,D2,D3,D4,D5)は、それぞれ、同じ半導体材料を有している、
請求項1または2記載のスケーラブルな電圧源(VQ)。 - 前記第1の積層体(ST1)は、基板(SUB)上に配置されており、前記基板(SUB)は、半導体材料を含んでいる、
請求項1から3までのいずれか1項記載のスケーラブルな電圧源(VQ)。 - 前記第1の積層体(ST1)は、2mm2未満または1mm2未満の底面面積を有している、
請求項1から4までのいずれか1項記載のスケーラブルな電圧源(VQ)。 - 前記底面は、4角形に構成されている、
請求項5記載のスケーラブルな電圧源(VQ)。 - 前記第1の積層体(ST1)の前記上側に、第1の電圧端子(VSUP1)が、周囲を取り囲んでいる第1の金属コンタクト(K1)として縁部(R)の近傍に形成されている、または、個々のコンタクト面(K1)として縁部(R)に形成されている、
請求項1から6までのいずれか1項記載のスケーラブルな電圧源(VQ)。 - 前記第1の積層体(ST1)の前記下側に、第2の電圧端子(VSUP2)が形成されている、
請求項1から7までのいずれか1項記載のスケーラブルな電圧源(VQ)。 - 前記第2の電圧端子(VSUP2)は、前記基板によって形成されている、
請求項4を引用する請求項8記載のスケーラブルな電圧源(VQ)。 - 第2の積層体(ST2)が形成されており、前記第1の積層体(ST1)と前記第2の積層体(ST2)とは、相互に隣接して、共通の担体上に配置されており、前記両積層体(ST1,ST2)は、相互に直列接続されているので、前記第1の積層体(ST1)の電源電圧(VQ1)と、前記第2の積層体(ST2)の電源電圧(VQ2)と、が合算される、
請求項1から9までのいずれか1項記載のスケーラブルな電圧源(VQ)。 - 前記各ダイオードの前記p型吸収層と前記n型吸収層との間に、真性層が形成されている、
請求項1から10までのいずれか1項記載のスケーラブルな電圧源(VQ)。 - 前記半導体材料および/または前記基板は、III−V族材料から成る、
請求項4記載のスケーラブルな電圧源(VQ)。 - 前記基板は、ゲルマニウムまたはヒ化ガリウムを含んでいる、
請求項4又は12記載のスケーラブルな電圧源(VQ)。 - 前記積層体の最も下側に位置する半導体ダイオードの下方に、半導体ミラーが形成されている、
請求項1から13までのいずれか1項記載のスケーラブルな電圧源(VQ)。 - 前記積層体(ST1)の前記半導体層は同時に、ヒ化物含有層とリン化物含有層とを含んでいる、
請求項1から14までのいずれか1項記載のスケーラブルな電圧源(VQ)。 - 前記縁部の辺は、最低で5μm、最大で500μm、前記積層体の直接的に接している側面から離れている、
請求項1から15までのいずれか1項記載のスケーラブルな電圧源(VQ)。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015012007A1 (de) | 2015-09-19 | 2017-03-23 | Azur Space Solar Power Gmbh | Skalierbare Spannungsquelle |
DE102016001387A1 (de) * | 2016-02-09 | 2017-08-10 | Azur Space Solar Power Gmbh | Empfängerbaustein |
US9865504B2 (en) | 2016-03-04 | 2018-01-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and manufacturing method thereof |
DE102017011643B4 (de) * | 2017-12-15 | 2020-05-14 | Azur Space Solar Power Gmbh | Optische Spannungsquelle |
DE102019003069B4 (de) * | 2019-04-30 | 2023-06-01 | Azur Space Solar Power Gmbh | Stapelförmige hochsperrende lll-V-Halbleiterleistungsdioden |
Family Cites Families (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4206002A (en) * | 1976-10-19 | 1980-06-03 | University Of Pittsburgh | Graded band gap multi-junction solar energy cell |
US4127862A (en) | 1977-09-06 | 1978-11-28 | Bell Telephone Laboratories, Incorporated | Integrated optical detectors |
US4179702A (en) * | 1978-03-09 | 1979-12-18 | Research Triangle Institute | Cascade solar cells |
JPS55125680A (en) * | 1979-03-20 | 1980-09-27 | Yoshihiro Hamakawa | Photovoltaic element |
US4688068A (en) * | 1983-07-08 | 1987-08-18 | The United States Of America As Represented By The Department Of Energy | Quantum well multijunction photovoltaic cell |
US4598164A (en) * | 1983-10-06 | 1986-07-01 | Exxon Research And Engineering Co. | Solar cell made from amorphous superlattice material |
US4667059A (en) * | 1985-10-22 | 1987-05-19 | The United States Of America As Represented By The United States Department Of Energy | Current and lattice matched tandem solar cell |
US4631352A (en) * | 1985-12-17 | 1986-12-23 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells |
JPS62234379A (ja) * | 1986-04-04 | 1987-10-14 | Kanegafuchi Chem Ind Co Ltd | 半導体装置 |
JP2719230B2 (ja) * | 1990-11-22 | 1998-02-25 | キヤノン株式会社 | 光起電力素子 |
US5223043A (en) * | 1991-02-11 | 1993-06-29 | The United States Of America As Represented By The United States Department Of Energy | Current-matched high-efficiency, multijunction monolithic solar cells |
US5298086A (en) * | 1992-05-15 | 1994-03-29 | United Solar Systems Corporation | Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby |
US5800630A (en) * | 1993-04-08 | 1998-09-01 | University Of Houston | Tandem solar cell with indium phosphide tunnel junction |
US5407491A (en) * | 1993-04-08 | 1995-04-18 | University Of Houston | Tandem solar cell with improved tunnel junction |
US6239354B1 (en) | 1998-10-09 | 2001-05-29 | Midwest Research Institute | Electrical isolation of component cells in monolithically interconnected modules |
US6150603A (en) * | 1999-04-23 | 2000-11-21 | Hughes Electronics Corporation | Bilayer passivation structure for photovoltaic cells |
JP3657143B2 (ja) * | 1999-04-27 | 2005-06-08 | シャープ株式会社 | 太陽電池及びその製造方法 |
US6316715B1 (en) * | 2000-03-15 | 2001-11-13 | The Boeing Company | Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material |
US6864414B2 (en) * | 2001-10-24 | 2005-03-08 | Emcore Corporation | Apparatus and method for integral bypass diode in solar cells |
JP2003218374A (ja) * | 2002-01-23 | 2003-07-31 | Sharp Corp | Iii−v族太陽電池 |
US20060162768A1 (en) * | 2002-05-21 | 2006-07-27 | Wanlass Mark W | Low bandgap, monolithic, multi-bandgap, optoelectronic devices |
US7122734B2 (en) * | 2002-10-23 | 2006-10-17 | The Boeing Company | Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers |
AU2003297649A1 (en) * | 2002-12-05 | 2004-06-30 | Blue Photonics, Inc. | High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same |
US7488890B2 (en) * | 2003-04-21 | 2009-02-10 | Sharp Kabushiki Kaisha | Compound solar battery and manufacturing method thereof |
DE102004023856B4 (de) * | 2004-05-12 | 2006-07-13 | Rwe Space Solar Power Gmbh | Solarzelle mit integrierter Schutzdiode und zusätzlich auf dieser angeordneten Tunneldiode |
US20060048811A1 (en) | 2004-09-09 | 2006-03-09 | Krut Dimitri D | Multijunction laser power converter |
DE102004044061A1 (de) | 2004-09-11 | 2006-04-20 | Rwe Space Solar Power Gmbh | Solarzellenanordung sowie Verfahren zum Verschalten eines Solarzellenstrings |
DE102005000767A1 (de) * | 2005-01-04 | 2006-07-20 | Rwe Space Solar Power Gmbh | Monolithische Mehrfach-Solarzelle |
JP4868746B2 (ja) * | 2005-02-16 | 2012-02-01 | シャープ株式会社 | 薄膜化合物太陽電池およびその製造方法 |
CN101507095A (zh) * | 2005-05-03 | 2009-08-12 | 特拉华大学 | 超高及较高效太阳能电池 |
US20100147381A1 (en) * | 2005-07-13 | 2010-06-17 | Haney Michael W | Ultra and very high efficiency solar cells |
US8795854B2 (en) * | 2005-08-01 | 2014-08-05 | Amit Goyal | Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates |
US8742251B2 (en) | 2006-12-20 | 2014-06-03 | Jds Uniphase Corporation | Multi-segment photovoltaic power converter with a center portion |
JP2008177212A (ja) * | 2007-01-16 | 2008-07-31 | Nec Corp | 半導体受光素子 |
WO2008124154A2 (en) * | 2007-04-09 | 2008-10-16 | Amberwave Systems Corporation | Photovoltaics on silicon |
US8895342B2 (en) * | 2007-09-24 | 2014-11-25 | Emcore Solar Power, Inc. | Heterojunction subcells in inverted metamorphic multijunction solar cells |
US20090188554A1 (en) * | 2008-01-25 | 2009-07-30 | Emcore Corporation | III-V Compound Semiconductor Solar Cell for Terrestrial Solar Array |
US9054254B2 (en) * | 2008-02-21 | 2015-06-09 | Sharp Kabushiki Kaisha | Solar cell and method of manufacturing solar cell |
US20090215215A1 (en) * | 2008-02-21 | 2009-08-27 | Sunlight Photonics Inc. | Method and apparatus for manufacturing multi-layered electro-optic devices |
US8075723B1 (en) * | 2008-03-03 | 2011-12-13 | Stion Corporation | Laser separation method for manufacture of unit cells for thin film photovoltaic materials |
US20090325340A1 (en) * | 2008-06-30 | 2009-12-31 | Mohd Aslami | Plasma vapor deposition system and method for making multi-junction silicon thin film solar cell modules and panels |
US8298856B2 (en) * | 2008-07-17 | 2012-10-30 | Uriel Solar, Inc. | Polycrystalline CDTE thin film semiconductor photovoltaic cell structures for use in solar electricity generation |
US9080425B2 (en) * | 2008-10-17 | 2015-07-14 | Foro Energy, Inc. | High power laser photo-conversion assemblies, apparatuses and methods of use |
US8916769B2 (en) * | 2008-10-01 | 2014-12-23 | International Business Machines Corporation | Tandem nanofilm interconnected semiconductor wafer solar cells |
US8138410B2 (en) * | 2008-10-01 | 2012-03-20 | International Business Machines Corporation | Optical tandem photovoltaic cell panels |
US8912428B2 (en) * | 2008-10-22 | 2014-12-16 | Epir Technologies, Inc. | High efficiency multijunction II-VI photovoltaic solar cells |
US20100122764A1 (en) * | 2008-11-14 | 2010-05-20 | Emcore Solar Power, Inc. | Surrogate Substrates for Inverted Metamorphic Multijunction Solar Cells |
JP5570736B2 (ja) * | 2009-02-06 | 2014-08-13 | シャープ株式会社 | 化合物半導体太陽電池の製造方法 |
US8299351B2 (en) * | 2009-02-24 | 2012-10-30 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Epitaxial growth of III-V compounds on (111) silicon for solar cells |
US9722131B2 (en) * | 2009-03-16 | 2017-08-01 | The Boeing Company | Highly doped layer for tunnel junctions in solar cells |
US10505062B2 (en) * | 2009-07-09 | 2019-12-10 | Faquir Chand Jain | High efficiency tandem solar cells and a method for fabricating same |
TWI409959B (zh) * | 2009-12-07 | 2013-09-21 | Epistar Corp | 太陽能電池元件及其裝置 |
JP5215284B2 (ja) * | 2009-12-25 | 2013-06-19 | シャープ株式会社 | 多接合型化合物半導体太陽電池 |
DE102010001420A1 (de) | 2010-02-01 | 2011-08-04 | Robert Bosch GmbH, 70469 | III-V-Halbleiter-Solarzelle |
US8852994B2 (en) * | 2010-05-24 | 2014-10-07 | Masimo Semiconductor, Inc. | Method of fabricating bifacial tandem solar cells |
US11417788B2 (en) * | 2010-11-19 | 2022-08-16 | The Boeing Company | Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells |
DE102011000521A1 (de) * | 2011-02-04 | 2012-08-23 | Azur Space Solar Power Gmbh | Mehrfachsolarzelle sowie Verfahren zur Herstellung einer solchen |
US9249016B2 (en) * | 2011-03-29 | 2016-02-02 | California Institute Of Technology | Graphene-based multi-junctions flexible solar cell |
CN103168368A (zh) * | 2011-04-27 | 2013-06-19 | 松下电器产业株式会社 | 利用太阳能电池产生电力的方法 |
US20120285519A1 (en) * | 2011-05-10 | 2012-11-15 | Emcore Solar Power, Inc. | Grid design for iii-v compound semiconductor cell |
US10340401B2 (en) * | 2011-09-22 | 2019-07-02 | The Boeing Company | Multi-layer back surface field layer in a solar cell structure |
WO2013059708A2 (en) * | 2011-10-21 | 2013-04-25 | University Of Utah Research Foundation | Homogeneous multiple band gap devices |
US8912617B2 (en) * | 2011-10-27 | 2014-12-16 | Solar Junction Corporation | Method for making semiconductor light detection devices |
WO2013074530A2 (en) * | 2011-11-15 | 2013-05-23 | Solar Junction Corporation | High efficiency multijunction solar cells |
US9263611B2 (en) * | 2011-11-17 | 2016-02-16 | Solar Junction Corporation | Method for etching multi-layer epitaxial material |
WO2013088621A1 (ja) * | 2011-12-14 | 2013-06-20 | パナソニック株式会社 | 太陽電池及びその製造方法 |
EP2618385A1 (de) * | 2012-01-20 | 2013-07-24 | AZUR SPACE Solar Power GmbH | Halbzeug einer Mehrfachsolarzelle und Verfahren zur Herstellung einer Mehrfachsolarzelle |
CN102651416A (zh) * | 2012-05-18 | 2012-08-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | 三结叠层GaAs激光光伏电池及其制备方法 |
CN107425084B (zh) * | 2012-06-22 | 2019-10-25 | 埃皮沃克斯股份有限公司 | 制造多结光伏装置的方法和光伏装置 |
US9985160B2 (en) * | 2012-09-14 | 2018-05-29 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
US9997659B2 (en) * | 2012-09-14 | 2018-06-12 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
US9099595B2 (en) * | 2012-09-14 | 2015-08-04 | The Boeing Company | Group-IV solar cell structure using group-IV or III-V heterostructures |
WO2014096200A1 (de) * | 2012-12-21 | 2014-06-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. | Justagetolerante photovoltaische zelle |
US9530911B2 (en) * | 2013-03-14 | 2016-12-27 | The Boeing Company | Solar cell structures for improved current generation and collection |
ITMI20131297A1 (it) * | 2013-08-01 | 2015-02-02 | Cesi Ct Elettrotecnico Sperim Entale Italian | Cella fotovoltaica con banda proibita variabile |
CN105706013B (zh) * | 2013-09-11 | 2018-07-03 | 国立研究开发法人宇宙航空研究开发机构 | 太阳电池调整系统、相关方法及最小电流检测及控制系统 |
CN103594539B (zh) * | 2013-10-22 | 2016-02-10 | 扬州乾照光电有限公司 | 一种柔性多结GaAs太阳电池及其制备方法 |
CN103545389B (zh) * | 2013-10-24 | 2016-03-30 | 瑞德兴阳新能源技术有限公司 | 一种多结聚光砷化镓太阳能电池及其制备方法 |
US20170018675A1 (en) * | 2014-04-11 | 2017-01-19 | Semprius, Inc. | Multi-junction photovoltaic micro-cell architectures for energy harvesting and/or laser power conversion |
US20150295114A1 (en) * | 2014-04-11 | 2015-10-15 | Sempruis, Inc. | Multi-junction power converter with photon recycling |
-
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