TW201626513A - 功率模組用基板單元及功率模組 - Google Patents

功率模組用基板單元及功率模組 Download PDF

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Publication number
TW201626513A
TW201626513A TW104121697A TW104121697A TW201626513A TW 201626513 A TW201626513 A TW 201626513A TW 104121697 A TW104121697 A TW 104121697A TW 104121697 A TW104121697 A TW 104121697A TW 201626513 A TW201626513 A TW 201626513A
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Taiwan
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layer
power module
heat dissipation
metal layer
small
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TW104121697A
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English (en)
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TWI649840B (zh
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Sotaro Oi
Tomoya Oohiraki
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Mitsubishi Materials Corp
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Abstract

本發明係一種功率模組用基板單元及功率模組，其中，功率模組用基板單元(51)係電路層(12)係經由複數的小電路層(12S)而加以構成，陶瓷基板層(11)則至少由一片加以構成，金屬層(13)則至少由一片加以構成，小電路層(12S)則作為具有接合於陶瓷基板層(11)之一方的面之第1鋁層(15)，和固相擴散接合於其第1鋁層(15)之第1銅層(16)的層積構造，金屬層(13)則經由與第1鋁層(15)同一材料而加以形成，散熱板(30)則經由銅或銅合金而加以形成，對於金屬層(13)與散熱板(30)則加以固相擴散接合，將第1銅層(16)之厚度作為t1(mm)、將接合面積作為A1(mm2)、將耐力作為σ 1(N/mm2)，而將在與前述金屬層之接合位置的散熱板(30)的厚度作為t2(mm)、將接合面積作為A2(mm2)、將耐力作為σ 2(N/mm2)時，比率(t1×A1×σ 1)/(t2×A2×σ 2)則作為0.80以上1.20以下者。

Description

功率模組用基板單元及功率模組
本發明係有關使用於控制大電流，高電壓之半導體裝置之功率模組用基板單元及功率模組。
本申請係依據於2014年7月4日，加以申請於日本國之日本特願2014-138716號、及於2015年6月30日，加以申請於日本國之日本特願2015-130972號而主張優先權，將其內容援用於此。
對於功率模組係加以使用於將氮化鋁為始之陶瓷基板之一方的面，加以接合形成電路層之金屬板之同時，於另一方的面加以接合散熱板之功率模組用基板。於此功率模組用基板之電路層上，藉由焊錫材而加以搭載有功率元件等之半導體元件。
伴隨著半導體元件之高輸出密度化之小型化進展，模組之集成化之要求則提升。作為一般的功率模組之集成化，知道有於絕緣基板排列附加複數之電路層的手法。但當設置複數之電路層於絕緣基板時，有著經由製造工程中或使用時之溫度變化而產生彎曲的課題。當於功率 模組用基板產生有彎曲時，在半導體元件的安裝工程中，產生有安裝不良而功率模組之產率下降，以及在實際使用時阻礙散熱性能之故，必須製造彎曲少之功率模組用基板。
對於專利文獻1，係揭示有設置複數絕緣基板(於陶瓷基板加以形成配線層而成之配線陶瓷基板)，以接合構件(引線架)接合此等複數之絕緣基板，由封閉樹脂而模組各絕緣基板及功率半導體元件之模組。另外，對於此專利文獻1中，係加以記載有經由使用複數個絕緣基板而可防止陶瓷基板之斷裂或封閉樹脂之剝離者。
對於專利文獻2，係加以揭示有經由如專利文獻1記載之功率模組，未使用引線架地，而經由位置決定構件而直接支持之時，決定位置複數之絕緣基板(電路基板)之功率模組。
先前技術文獻 專利文獻
專利文獻1：日本特開2007-27261號公報
專利文獻2：日本特開2013-157578號公報
但在記載於專利文獻1之方法中，由防止陶 瓷基板之斷裂或封閉樹脂之剝離者，即使作為可維持良好的散熱性，亦成為使剛性不高之配線構件(引線架)擔負位置決定機能之故，各絕緣基板之位置精確度則不易展現，而更集成化則為困難。
另外，如記載於專利文獻2地，在直接支持絕緣基板之方法中，從模組金屬模具之限制等，正確地將複數的絕緣基板進行決定位置者則並非容易。
本發明係有鑑於如此之情事所作為之構成，其目的為提供：經由溫度變化之形狀變形少，對於散熱性優越，可謀求電路之集成化的功率模組用基板單元及功率模組者。
本發明係一種功率模組用基板單元，其中，具有陶瓷基板層，和經由接合於此陶瓷基板層之一方的面之複數的小電路層而加以構成之電路層，和接合於前述陶瓷基板層之另一方的面之金屬層，和接合於前述金屬層之一片的散熱板，各前述小電路層則作為具有接合於前述陶瓷基板層之前述一方的面之第1鋁層，和固相擴散接合於該第1鋁層之第1銅層的層積構造，前述金屬層則經由與前述第1鋁層同一材料而加以形成，前述散熱板則經由銅或銅合金而加以形成，對於前述金屬層而言加以固相擴散接合，將前述第1銅層之厚度作為t1(mm)、將前述第1銅層之接合面積作為A1(mm2)、將耐力作為σ1 (N/mm2)，而將在與前述金屬層之接合位置的前述散熱板的厚度作為t2(mm)、將前述散熱板之接合面積作為A2(mm2)、將耐力作為σ2(N/mm2)時，比率(t1×A1×σ1)/(t2×A2×σ2)則為0.80以上1.20以下者。
將電路層(小電路層)，作為第1鋁層與第1銅層之層積構造，對於其電路層而言，於陶瓷基板層之相反側係藉由經由與第1鋁層同一材料而加以形成之金屬層，配置經由銅或銅合金而加以形成之散熱板，對於電路層之第1銅層與散熱板，由將此等厚度，接合面積及耐力的關係設定為上述之範圍者，可構成將陶瓷基板層作為中心之對稱構造。即，在經由排列配設複數之小電路層於散熱板上等而將電路層圖案化之情況中，電路層之接合部分與加以接合金屬層之散熱板的接合部分係形狀則為不同，但經由考慮在此等接合部分之第1銅層與散熱板之對稱性之時，可使將陶瓷基板層作為中心之對稱性提升者。
經由此，不易在加熱時等對於作用在陶瓷基板層兩面之應力產生偏差，而可不易產生彎曲。隨之，不僅在各層之層積時之初期彎曲，而在半導體元件之安裝工程時或使用環境中，亦可抑制彎曲的產生，作為絕緣基板而亦可提升信賴性，可使良好的散熱性發揮者。另外，經由於一片的散熱板接合複數之小電路層之時，可正確地將複數之小電路層進行決定位置，而謀求高集成化者。
在本發明之功率模組用基板單元中，前述陶 瓷基板層則經由與前述小電路層同數之小陶瓷基板而加以構成，而前述金屬層則經由與前述小電路層同數之小金屬層而加以構成，藉由前述小陶瓷基板而加以接合前述小電路層與前述小金屬層而成之複數之功率模組用基板則拉開間隔而加以接合於前述散熱板上之構成亦可。
在本發明之功率模組用基板單元中，前述陶瓷基板層則經由與前述小電路層同數之小陶瓷基板而加以構成，而前述金屬層則由一片而加以構成，接合前述小電路層與前述小陶瓷基板之層積基板則拉開間隔而加以接合於前述金屬層上而成之功率模組用基板，則藉由前述金屬層而加以接合於前述散熱板上之構成亦可。
在本發明之功率模組用基板單元中，前述陶瓷基板層則由一片而加以構成，前述金屬層則經由與前述小電路層同數之小金屬層而加以構成，將前述小電路層與前述小金屬層，藉由前述陶瓷基板層而拉開間隔而加以接合於該陶瓷基板層之面方向所成之功率模組用基板，則藉由前述金屬層而加以接合於前述散熱板上之構成亦可。
在本發明之功率模組用基板單元中，前述陶瓷基板層則由一片加以構成之同時，前述金屬層則由一片加以構成，而前述小電路層則拉開間隔而加以接合於前述陶瓷基板層之前述一方的面，加以接合前述金屬層於陶瓷基板層之前述另一方的面所成之功率模組用基板，則藉由前述金屬層而加以接合於前述散熱板上之構成。
在上述之各構成中，亦由將第1銅層與散熱 板之關係，比率(t1×A1×σ1)/(t2×A2×σ2)則呈成為0.80以上1.20以下地加以設定者，可構成將陶瓷基板層作為中心之對稱構造，不易在加熱時等對於作用在陶瓷基板層兩面之應力產生偏差，而可不易產生彎曲。
另外，對於將陶瓷基板層，由熱膨脹係數之比較小而剛性高之陶瓷基板一片而構成之情況，因不易在加熱時等對於作用在陶瓷基板層兩面之應力產生偏差之故，可提高防止產生彎曲之效果者。
在本發明之功率模組用基板單元中，作為前述第1鋁層與前述第1銅層則藉由鈦層而加以固相擴散接合之構成亦可。
在本發明之功率模組用基板單元中，作為前述金屬層與前述散熱板則藉由鈦層而加以固相擴散接合之構成亦可。
在本發明之功率模組用基板單元中，作為前述第1鋁層與前述第1銅層，及前述金屬層與前述散熱板則藉由鈦層而加以固相擴散接合之構成亦可。
因前述第1鋁層與前述第1銅層，及前述金屬層與前述散熱板之任一，或者雙方則藉由鈦層而加以固相擴散接合之故，在功率模組用基板單元則成為高溫時，成為可抑制Al與Cu之金屬間化合物之成長者，可使接合信賴性或壽命提升。
本發明之功率模組係具備：前述功率模組用基板單元，和接合於前述功率模組用基板單元之前述小電 路層之至少一個之半導體元件及外部連接用引線架，和除了前述散熱板的表面而封閉前述半導體元件與前述功率模組用基板單元之樹脂模具。
經由使用接合複數之小電路層於一片的散熱板之功率模組用基板單元之時，可容易地製造加以集成化之功率模組。另外，功率模組用基板單元係因經由一片的散熱片而加以一體化之故，即使在封閉時產生有樹脂壓，亦不易產生有位置偏移或變形。
如根據本發明，可抑制經由半導體元件之安裝工程時或在使用環境之溫度變化的形狀變化，可提升作為絕緣基板之信賴性或半導體元件之連接信賴性，進而可發揮良好的散熱性。另外，因可正確地進行複數之小電路層之決定位置之故，可謀求高集成化者。
11‧‧‧陶瓷基板層
11S‧‧‧小陶瓷基板
12‧‧‧電路層
12S‧‧‧小電路層
13‧‧‧金屬層
13a‧‧‧金屬層鋁板
13S‧‧‧小金屬層
14‧‧‧層積基板
15‧‧‧第1鋁層
15a‧‧‧第1層鋁板
16‧‧‧第1銅層
16a‧‧‧第1層銅板
18‧‧‧焊接填料材箔
19‧‧‧接合體
21~25‧‧‧功率模組用基板
30，32‧‧‧散熱板
30a‧‧‧露出面
40‧‧‧樹脂模具
51~56‧‧‧功率模組用基板單元
60‧‧‧半導體元件
70‧‧‧外部連接用引線架
80‧‧‧散熱片
81‧‧‧天板部
82‧‧‧冷卻部
83‧‧‧流路
100‧‧‧功率模組
110‧‧‧加壓裝置
111‧‧‧基底板
112‧‧‧導柱
113‧‧‧固定板
114‧‧‧按壓板
115‧‧‧賦能手段
116‧‧‧碳薄板
圖1係顯示本發明之第1實施形態之功率模組之剖面圖。
圖2係顯示本發明之第1實施形態之功率模組用基板單元之製造工程的剖面圖。
圖3係顯示使用於本發明之第1實施形態之功率模組用基板單元之製造之加壓裝置的例之正面圖。
圖4係圖1所示之第1實施形態之功率模組用基板單元之斜視圖。
圖5係說明第1銅層與散熱板之厚度關係之第2實施形態之功率模組用基板單元的剖面圖。
圖6係顯示本發明之第3實施形態之功率模組用基板單元之剖面圖。
圖7係顯示本發明之第4實施形態之功率模組用基板單元之剖面圖。
圖8係顯示本發明之第5實施形態之功率模組用基板單元之剖面圖。
圖9係本發明之其他實施形態的功率模組用基板單元之正面圖。
以下，參照圖面同時加以說明本發明之實施形態。
圖1所示之本實施形態之功率模組100係具備：功率模組用基板單元51，和加以接合於功率模組用基板單元51之半導體元件60，和外部連接用引線框70，而半導體元件60與功率模組用基板單元51則除了散熱板30之表面(露出面30a)而經由樹脂模具40而加以樹脂封閉之構成。並且，此功率模組100係例如，在按壓散熱板30之露出面30a於散熱片80之表面狀態而加以固定。
如圖1，圖2C及圖4所示，功率模組用基板 單元51係於陶瓷基板層11之一方的面加以接合電路層12之同時，於陶瓷基板層11之另一方的面，藉由金屬層13而加以接合一片之散熱板30之構成。電路層12係經由複數之小電路層12S而加以構成，而陶瓷基板層11則至少由一片加以構成，而金屬層13則由至少一片加以構成。
在圖1，圖2C及圖4所示之本實施形態之功率模組用基板單元51中，陶瓷基板層11則經由與小電路層12S同數之小陶瓷基板11S加以構成，而金屬層13則經由與小電路層12S同數之小金屬層13S而加以構成。藉由小陶瓷基板11S而加以接合小電路層12S與小金屬層13S之功率模組用基板21則拉開間隔而加以接合於一片的散熱板30上。此等功率模組用基板21係經由硬焊接合而加以接合小電路層12S於小陶瓷基板11S之一方的面，而於小陶瓷基板11S之另一方的面，經由硬焊接合而加以接合小金屬層13S之時，而加以形成。
構成陶瓷基板層11之小陶瓷基板11S係例如，可使用AlN(氮化鋁)、Si3N4(氮化矽素)等之氮化物系陶瓷，或Al2O3(氧化鋁)等之氧化物系陶瓷者。小陶瓷基板11S的厚度係可設定為0.2~1.5mm之範圍內。
構成電路層12之各小電路層12S係作為具有加以接合於陶瓷基板層11(小陶瓷基板11S)之表面的第1鋁層15，和加以接合於其第1鋁層15之第1銅層16之層積構造。
此第1鋁層15係經由將純鋁或鋁合金所成之板材，接合於陶瓷基板層11(小陶瓷基板11S)之時而加以形成。在本實施形態中，第1鋁層15係使用純度99.99質量%以上，在JIS規格中係1N99(純度99.99質量%以上：所謂4N鋁)之純鋁板，則經由硬焊接合於小陶瓷基板11S之時而加以接合。第1銅層16係經由將純銅或銅合金所成之板材，接合於第1鋁層15之時而加以形成。在本實施形態中，第1銅層16係經由加以固相擴散接合無氧銅之銅板於第1鋁層15而加以形成。第1鋁層15之厚度係作為0.1mm以上3.0mm以下、而第1銅層16之厚度係作為0.5mm以上5.0mm以下。
構成金屬層13之小金屬層13S係經由與電路層12(小電路層12S)之第1鋁層15同一材料而加以形成。在本實施形態中，小金屬層13S係加以形成為與第1鋁層15同一純度99.99質量%以上之厚度0.1mm以上，不足3.0mm之鋁板，則經由硬焊接合而加以形成於小陶瓷基板11S。小電路層12S與小金屬層13S係加以形成為略相同尺寸之平面形狀。
散熱板30係經由純銅或銅合金所成之板材而加以形成，而加以固相擴散接合各功率模組用基板21之小金屬層13S。在本實施形態中，散熱板30係經由鋯添加耐熱銅合金(日本三菱伸銅股份有限公司製之ZC合金：Cu99.98wt%-Zr0.02wt%)，加以形成為厚度1.5mm之平板狀，如圖1及圖2C所示，較小電路層12S所成之 電路層12與小金屬層13S所成之金屬層13為大，較電路層12與陶瓷基板11之接合面為大之平面形狀。
此散熱板30與各小電路層12S之第1銅層16係將第1銅層16之厚度作為t1(mm)、將對於第1銅層16之第1鋁層15而言之接合面積作為A1(mm2)、將第1銅層16之耐力作為σ1(N/mm2)，而將在與金屬層13(小金屬層13S)之接合位置的散熱板30的厚度作為t2(mm)、將對於散熱板30而言之金屬層13之接合面積作為A2(mm2)、將散熱板30之耐力作為σ2(N/mm2)時，比率(t1×A1×σ1)/(t2×A2×σ2)則加以設定為成為0.80以上1.20以下之關係。
例如，第1銅層16則為厚度t1=2.0mm之C1020(耐力σ1=195N/mm2)，第1銅層16與第1鋁層15之接合面積A1則作為800mm2，而散熱板30則為厚度t2=1.4mm之日本三菱伸銅股份有限公司製耐熱合金ZC(耐力σ2=280N/mm2)，金屬層13與散熱板30之接合面積A2則作為900mm2之組合的情況，成為比率(t1×A1×σ 1)/(t2×A2×σ 2)=0.88。然而，在本發明之耐力的值係室溫(25℃)時的值。另外，接合面積A1係對於在各功率模組用基板21之第1銅層16的第1鋁層15之接合面積的總和。同樣地，接合面積A2亦為對於在各功率模組用基板21之小金屬層13S的散熱板30之接合面積的總和。
於構成此功率模組用基板單元51之各功率模 組用基板21的小電路層12S表面，加以焊錫接合半導體元件60，而於此半導體元件60或小電路層12S，加以連接外部連接用引線架70。半導體元件60與功率模組用基板單元51則除了散熱板30之表面(露出面30a)而經由樹脂模具40加以樹脂封閉作為一體化。外部連接用引線架70係其一部分則呈突出於樹脂模具40的外部地加以設置。
半導體元件60係具備半導體之電子構件，因應作為必要之機能而加以選擇IGBT(Insulated Gate Bipolar Transistor)、MOSFET(Metal Oxide Semiconductor Field Effect Transistor)、FWD(Free Wheeling Diode)等各種半導體元件。接合半導體元件60之焊錫材係例如，作為Sn-Sb系、Sn-Ag系、Sn-Cu系、Sn-In系、或Sn-Ag-Cu系之焊錫材(所謂無鉛銲錫材)。
外部連接用引線架70係例如，經由銅或銅合金而加以形成，經由超音波接合或焊錫接合等而加以連接。
樹脂模具40係例如，可使用加入SiO2填充物之環氧樹脂等，例如經由轉移鑄模而加以成形。
如此所構成之功率模組100係如圖1所示，在加以固定於散熱片80之狀態加以使用。散熱片80係為了將功率模組100的熱散發的構成，在本實施形態中，由加以固定功率模組100之散熱板30的天板部81，和加以設置為了流通冷卻媒體(例如，冷卻水)之流路83的冷 卻部82所成。於功率模組100之散熱板30與散熱片80之天板部81之間，使例如潤滑油(略圖示)介入存在，經由彈簧等而按壓此等功率模組100與散熱片80而固定。
散熱片80係由熱傳導性良好之材料加以構成者為佳，在本實施形態中，係經由鋁合金(A6063合金)而加以形成。作為加以固定功率模組100之散熱片80，係可採用平板狀之構成，經由熱間鍛造等而一體地形成多數之銷狀鰭片之構成，經由壓出成形而一體地形成相互平行之帶狀鰭片之構成等，適宜的形狀構成。然而，對於由鋁或銅所形成之散熱片，係亦可焊錫接合功率模組而固定者。
接著，對於製造如此加以構成之功率模組用基板單元51及功率模組100之方法加以說明一例。
首先，如圖2A所示，於小陶瓷基板11S之一方的面，層積小電路層12S之中成為第1鋁層15之第1層鋁板15a，而於另一方的面，層積成為小金屬層13S之金屬層鋁板13a，一體地接合此等。對於此等接合係加以使用Al-Si系等之合金的焊接填料材。例如，藉由前述合金之焊接填料材箔18而將層積小陶瓷基板11S，第1層鋁板15a，及金屬層鋁板13a之層積體S，使用圖3所示之加壓裝置110而加壓於層積方向。
此圖3所示之加壓裝置110係具備：基底板111，和垂直地安裝於基底板111上面之四角的導柱 112，和加以固定於此等導柱112之上端部的固定板113，和在此等基底板111與固定板113之間，上下移動自由地加以支持於導柱112之按壓板114，和加以設置於固定板113與按壓板114之間而將按壓板114賦能於下方之彈簧等之賦能手段115。
固定板113及按壓板114係對於基底板111而言加以平行地配置，於基底板111與按壓板114之間加以配置前述之層積體S。對於層積體S兩面係為了均一地進行加壓而加以配設碳薄板116。
在經由此加壓裝置110而加壓之狀態的層積體S，設置於各加壓裝置110略圖示之加熱爐內，在真空環境下加熱為附上焊接填料溫度進行附上焊接填料。此情況，作為加壓力，係例如作為0.68MPa(7kgf/cm2)、作為加壓溫度係例如作為640℃。
並且，如圖2B所示，於加以接合小陶瓷基板11S與第1鋁層15及小金屬層13S的接合體19，接合成為第1銅層16之第1層銅板16a及散熱板30。將於接合體19之第1鋁層15，層積第1層銅板16a，而於小金屬層13S層積散熱板30的層積體，在使用與圖3同樣之加壓裝置110而加壓於層積方向的狀態，各加壓裝置110在真空環境下進行加熱，固相擴散接合第1鋁層15及第1銅層16而形成小電路層12S之同時，固相擴散接合小金屬層13S及散熱板30。此情況，作為加壓力，係例如作為0.29MPa以上3.43MPa以下、作為加熱溫度係作為400 ℃以上，不足548℃。經由將此加壓及加熱狀態作為5分鐘以上240分鐘以下保持之時，第1鋁層15及第1銅層16，小金屬層13S及散熱板30則同時被固相擴散接合，而得到功率模組用基板單元51(圖2C，圖4)。
在本實施形態中，第1鋁層15及第1銅層16之各接合面，小金屬層13S與散熱板30之各接合面係在固相擴散接合前，預先除去傷痕而加以作為成平滑。在固相擴散接合之真空加熱的理想加熱溫度係作為鋁與銅之共晶溫度-5℃以上，不足共晶溫度之範圍。
然而，第1鋁層15及第1銅層16，小金屬層13S及散熱板30之固相擴散接合係並非加以限定於同時進行之情況者。先行接合第1鋁層15及第1銅層16，而在形成功率模組用基板21之後，接合小金屬層13S與散熱板30等，各工程係可不限於上述實施形態而進行者。
於如此作為所製造之功率模組用基板單元51之小電路層12S，焊錫接合(晶片黏合)半導體元件60。更且，經由超音波接合或焊錫接合等之方法而連接外部連接用引線架70於半導體元件60及小電路層12S之後，經由轉移鑄模成形而形成樹脂模具40，將半導體元件60與功率模組用基板單元51，除了散熱板30之露出面30a而進行樹脂封閉。
在如此所製造之功率模組用基板單元51中，將第1銅層16之厚度作為t1(mm)、將第1鋁層15與第1銅層16之接合面積作為A1(mm2)、將第1銅層16 之耐力作為σ 1(N/mm2)，而將與金屬層13之接合位置，即在與各小金屬層13S之接合位置的散熱板30的厚度作為t2(mm)、將金屬層13與散熱板30之接合面積作為A2(mm2)、將散熱板30之耐力作為σ 2(N/mm2)時，因將比率(t1×A1×σ 1)/(t2×A2×σ 2)加以設定為為0.80以上1.20以下之範圍之故，成為將陶瓷基板層11作為中心之對稱構造。即，比率(t1×A1×σ 1)/(t2×A2×σ 2)為1.00之情況，0.80以上不足1.00之情況，超過1.00而1.20以下之情況中，可良好地構成將陶瓷基板層11作為中心之對稱構造。
如本實施形態，經由考慮電路層12之接合部分，和加以接合有金屬層13之散熱板30之接合部分的上述比率，可使將陶瓷基板層11作為中心之對稱性提升者。經由此，不易在加熱時等對於作用在陶瓷基板層11兩面之應力產生偏差，而可不易產生彎曲。隨之，不僅在各層之層積時之初期彎曲，而在半導體元件60之安裝工程時或使用環境中，亦可抑制彎曲的產生，作為絕緣基板而亦可提升信賴性，可使良好的散熱性發揮者。另外，經由於一片的散熱板30接合複數之功率模組用基板21(小電路層12S)之時，可正確地將複數之功率模組用基板21(小電路層12S)決定位置，而可謀求高集成化者。
更且，經由使用於一片的散熱板30接合複數之功率模組用基板21的功率模組用基板單元51之時，如本實施形態之功率模組100，可容易地製造加以集成化之 功率模組。另外，功率模組用基板單元51係因經由一片的散熱板30而加以一體化之故，即使樹脂壓產生作用，亦不易產生有位置偏移或變形，而從容易表現位置精確度之情況，可謀求高集成化者。
然而，在上述實施形態中，構成使用平板狀之散熱板30的功率模組用基板單元51，但亦可使用於平板部設置經由銷狀鰭片等之溫度變化之形狀變化小的鰭片之散熱板，或具有厚度並非一樣形狀之散熱板等者。此情況，由將加以接合有金屬層之平板部的厚度作為散熱板之厚度t2，使對於第1銅層而言之散熱板的關係，即比率(t1×A1×σ 1)/(t2×A1×σ 2)則作為0.80以上1.20以下之第1銅層與散熱板之關係成立者，在使用具有如此複雜形狀之散熱板的功率模組用基板單元中，亦可構成將陶瓷基板層11作為中心之對稱構造。
例如，如圖5所示之第2實施形態之功率模組用基板單元52，散熱板32則並非一樣的平板狀，而具有厚度不同之形狀部分的情況，在第1鋁層15與第1銅層16之接合位置，和金屬層13與散熱板32之接合位置中，由將第1銅層16與散熱板32之關係，比率(t1×A1×σ 1)/(t2×A2×σ 2)則呈成為0.80以上1.20以下地加以設定者，可構成將陶瓷基板層11作為中心之對稱構造。
此情況，將第1鋁層15與第1銅層16之接合面積作為A1(mm2)，而將金屬層13與散熱板32之接合面積作為A2(mm2)。如此，在此功率模組用基板 單元52中，比率(t1×A1×σ 1)/(t2×A2×σ 2)為1.00之情況，0.80以上不足1.00之情況，超過1.00而1.20以下之情況中，與第1實施形態同樣地良好地加以構成將陶瓷基板層11作為中心之對稱構造。隨之，不易在加熱時等對於作用在陶瓷基板層11兩面之應力產生偏差，而可不易產生彎曲，使良好的散熱性發揮者。
然而，接合面積A1係對於在各功率模組用基板21之第1銅層16的第1鋁層15而言之接合面積的總和。同樣地，接合面積A2亦為對於在各功率模組用基板21之小金屬層13S的散熱板30而言之接合面積的總和。
圖6係顯示第3實施形態之功率模組用基板單元53。在此功率模組用基板單元53中，陶瓷基板層11係經由與小電路層12S同數之小陶瓷基板11S而加以構成，由一片加以構成金屬層13。加以接合有小電路層12S與小陶瓷基板11S之層積基板14則經由拉開間隔而加以接合於金屬層13上之時，加以形成功率模組用基板23。經由加以接合功率模組用基板23之金屬層13於散熱板30上之時，加以形成功率模組用基板單元53。
在此情況，在第1鋁層15與第1銅層16之接合位置，和金屬層13與散熱板30之接合位置中，由將第1銅層16與散熱板30之關係，比率(t1×A1×σ 1)/(t2×A2×σ 2)則呈成為0.80以上1.20以下地加以設定者，可構成將陶瓷基板層11作為中心之對稱構造。此情況，將第1鋁層15與第1銅層16之接合面積作為A1 (mm2)，而將金屬層13與散熱板30之接合面積作為A2(mm2)。
如本實施形態之功率模組用基板單元53，即使接合面積A1與接合面積A2為不同之情況，由將在此等接合部分之第1銅層16與散熱板30之關係，比率(t1×A1×σ 1)/(t2×A2×σ 2)則呈成為0.80以上1.20以下地加以設定者，與第1實施形態同樣地，亦可良好地加以構成將陶瓷基板層11作為中心之對象構造。即，在此功率模組用基板單元53中，比率(t1×A1×σ 1)/(t2×A2×σ 2)為1.00之情況，0.80以上不足1.00之情況，超過1.00而1.20以下之情況中，與第1實施形態同樣地良好地加以構成將陶瓷基板層11作為中心之對稱構造。然而，接合面積A1係對於在各層積基板14之第1銅層16的第1鋁層15而言之接合面積的總和。
圖7係顯示第4實施形態之功率模組用基板單元54。在此功率模組用基板單元54中，由一片加以構成陶瓷基板層11，而金屬層13則經由與小電路層12S同數之小金屬層13S而加以構成。經由小電路層12S與小金屬層13S則藉由陶瓷基板層11而拉開間隔而加以接合於陶瓷基板層11之面方向之時，加以形成功率模組用基板24。經由加以接合功率模組用基板24之金屬層13(各小金屬層13S)於散熱板30上之時，加以形成功率模組用基板單元54。
如此，由一片加以構成陶瓷基板層11之情 況，在第1鋁層15與第1銅層16之接合位置，和小金屬層13與散熱板30之接合位置中，由將第1銅層16與散熱板30之關係，比率(t1×A1×σ 1)/(t2×A2×σ 2)則呈成為0.80以上1.20以下地加以設定者，亦可構成將陶瓷基板層11作為中心之對稱構造。此情況，將第1鋁層15與第1銅層16之接合面積作為A1(mm2)，而將金屬層13與散熱板30之接合面積作為A2(mm2)。
如此，在此功率模組用基板單元54中，比率(t1×A1×σ 1)/(t2×A2×σ 2)為1.00之情況，0.80以上不足1.00之情況，超過1.00而1.20以下之情況中，與第1實施形態同樣地加以構成將陶瓷基板層11作為中心之對稱構造。並且，如此第4實施形態之功率模組用基板單元54，經由以一片構成線膨脹係數小，而剛性高之陶瓷基板層11之時，因可更一層不易在加熱時等對於作用在陶瓷基板層11兩面的應力產生偏差之故，可更提高防止彎曲產生的效果者。然而，接合面積A1係對於在各功率模組用基板24之第1銅層16的第1鋁層15而言之接合面積的總和。同樣地，接合面積A2亦為對於在各功率模組用基板24之小金屬層13S的散熱板30而言之接合面積的總和。
圖8係顯示第5實施形態之功率模組用基板單元55。在此功率模組用基板單元55中，由一片加以構成陶瓷基板層11之同時，金屬層13亦由一片加以構成。經由小電路層12S則拉開間隔而加以接合於陶瓷基板層 11之一方的面，而於陶瓷基板層11之另一方的面，加以接合有金屬層13之時，加以形成功率模組用基板25。經由加以接合功率模組用基板25之金屬層13於散熱板30上之時，加以形成功率模組用基板單元55。
如此，由一片加以構成陶瓷基板層11之同時，金屬層13亦由一片加以構成之情況，在第1鋁層15與第1銅層16之接合位置，和金屬層13與散熱板30之接合位置中，由將第1銅層16與散熱板30之關係，比率(t1×A1×σ 1)/(t2×A2×σ 2)則呈成為0.80以上1.20以下地加以設定者，亦可構成將陶瓷基板層11作為中心之對稱構造。此情況，將第1鋁層15與第1銅層16之接合面積作為A1(mm2)，而將金屬層13與散熱板30之接合面積作為A2(mm2)。
如此，在此功率模組用基板單元55中，比率(t1×A1×σ 1)/(t2×A2×σ 2)為1.00之情況，0.80以上不足1.00之情況，超過1.00而1.20以下之情況中，與第1實施形態同樣地良好地加以構成將陶瓷基板層11作為中心之對稱構造。並且，在此情況中，經由以一片構成線膨脹係數小，而剛性高之陶瓷基板層11之時，因可更一層不易在加熱時等對於作用在陶瓷基板層兩面的應力產生偏差之故，可更提高防止彎曲產生的效果者。然而，接合面積A1係對於在各小電路層12S之第1銅層16的第1鋁層15而言之接合面積的總和。
在以上說明之各實施形態中，對於搭載2個 電路(小電路層12S)於散熱板30，所謂2in1構造之功率模組進行過說明，但如使用本發明之功率模組用基板單元及功率模組的構造，可容易地進行對於搭載3個電路之3in1構造，或如圖9所示之功率模組用基板單元56，搭載6個電路(小電路層12S)於散熱板30之6in1構造的展開者。然而，在圖9中，省略除了小電路層12S與散熱板30之外的陶瓷基板層11，金屬層13之圖示。
更且，由將具有散熱板之功率模組用基板單元，作為各配置於半導體元件之兩面的構成者，亦可作為兩面冷卻構造者。
在上述實施形態中，加以直接固相擴散第1鋁層15與第1銅層16，而加以直接固相擴散接合金屬層13與散熱板30，32。
但本發明係不限定於直接固相擴散接合之情況，而亦可作為如以下之構成者。
在上述實施形態中，第1鋁層15與第1銅層16，及金屬層13與散熱板30，32之任一或雙方則作為藉由鈦層而加以固相擴散接合之構成亦可。此情況，功率模組用基板單元則在成為高溫時，成為可抑制Al與Cu之金屬間化合物之成長者，而可使接合信賴性或壽命提升。
鈦層之厚度係可作為5μm以上50μm以下者。鈦層之厚度則不足5μm之情況，在固相擴散接合時，鈦層則容易破損之故，抑制Al與Cu之金屬間化合物之成長的效果則變低。鈦層之厚度則超過50μm之情 況，熱傳導差的鈦層則變厚之故，功率模組用基板單元之熱阻抗的上升則變為顯著。
鈦層的存在則對於彎曲帶來的影響係可無視。
作為製造包含鈦層之功率模組用基板單元之方法，係在以記載於上述實施形態之製造方法而製造時，於第1鋁層15與第1銅板16a之間，或金屬層13與散熱板30，32之間，如使鈦箔介入存在而進行固相擴散接合即可。鈦箔之厚度係可作為5μm以上50μm即可。
實施例
接著，對於為了確認本發明之效果而進行之實施例加以說明。
作為功率模組用基板單元之試料，準備作為陶瓷基板層而由厚度0.635mm的AlN所成之陶瓷基板，和作為第1鋁層及金屬層(第1層鋁板及金屬層鋁板)而有厚度0.6mm之純度99.99質量%以上(4N)的鋁板。作為第1銅層及散熱板(第1層銅板及散熱板)，經由C1020(耐力=195N/mm2)、或日本三菱伸銅股份有限公司製耐熱合金ZC(耐力=280N/mm2)，準備表1所示之厚度的板材。然而，耐力的值係室溫(25℃)時的值。各構件之平面尺寸係如表1所示地形成。
經由在上述實施形態所述之接合方法而接合此等，製作功率模組用基板單元之試料。表1之「實施形 態」係顯示各試料則由哪個實施形態之製造方法所作成者。另外，作為以往例，製作在第1實施形態所述之接合方法中，未接合電路層之第1銅層，而未加以形成第1銅層(即，電路層則僅由第1鋁層加以形成)功率模組用基板單元(表1之以往例1)。
在表1中，「電路數」係顯示構成電路層之小電路層的數量。另外，陶瓷基板層之「構成數」係顯示陶瓷基板層則由複數之小陶瓷基板而加以構成情況之小陶瓷基板的數量。金屬層之「構成數」係顯示金屬層則由複數之小金屬層而加以構成情況之小金屬層的數量。因此，例如，由一片加以構成陶瓷基板層之情況係「構成數」係記載為「1」。然而，電路層，陶瓷基板層及金屬層之各「平面尺寸」係各小電路層，小陶瓷基板及小金屬層之尺寸，如表1所示地形成。另外，散熱板係平板狀，全體之平面尺寸係作為100mm×100mm。然而，表1之「比率」係顯示比率(t1×A1×σ 1)/(t2×A2×σ 2)。
對於所得到之各試料，各測定在接合後之常溫(25℃)時之彎曲量(初期彎曲)，想定安裝工程之285℃加熱時之彎曲量(加熱時彎曲)。彎曲量係使用波紋式三維形狀測定機而測定評估散熱板背面之平面度變化。然而，彎曲量係將於電路層側彎曲成凸狀之情況作為正的彎曲量(+)、而將於電路層側彎曲成凹狀之情況作為負的彎曲量(-)。
另外，評估在半導體元件之安裝工程的產 率。對於各試料100個而言，將半導體元件安裝於第1銅層上，將從安裝位置對於100μm以上水平方向產生有位置偏移之構成作為不佳，將成為不佳之個數為2個以下的情況，作為最為良好而評估為「A」，而3個以上不足10個之情況係作為良好而評估為「B」，而10個以上係作為不佳而評估為「C」。將其結果示於表1。
如從表1了解到，加以確認在未設置第1銅層之以往例1中，在常溫時及加熱時之彎曲量為大，在安裝半導體元件時不佳亦變多者。對此，在具有第1銅層，比率(t1×A1×σ 1)/(t2×A2×σ 2)則作為0.80以上1.20以下之發明例1~14中，加以確認到可得到常溫時之彎曲量及加熱時之彎曲量為小之功率模組用基板單元者。另外，由使用如此之功率模組用基板單元者，了解到可以高產率而安裝半導體元件。
特別是在常溫時之彎曲量為±120μm以下，且常溫時與加熱時之彎曲量的差分為不足120μm之發明例1~4，7~10，12~14中，了解到可得到可以更高產率而安裝半導體元件之功率模組用基板單元者。
另一方面，在即使具有第1銅層，而比率(t1×A1×σ 1)/(t2×A2×σ 2)則不足0.80或超過1.20之發明例1~6中，亦加以確認到功率模組用基板單元之常溫時之彎曲量及加熱時之彎曲量為大，在半導體元件之安裝工程的產率為低者。
然而，本發明係未限定於上述實施形態者，在不脫離本發明之內容的範圍，可加上種種變更者。
產業上之利用可能性
可提供：經由溫度變化之形狀變化少而對於散熱性優越，可謀求電路之集成化之功率模組用基板單元及功率模組。
11S‧‧‧小陶瓷基板
12S‧‧‧小電路層
13S‧‧‧小金屬層
15‧‧‧第1鋁層
16‧‧‧第1銅層
21‧‧‧功率模組用基板
30‧‧‧散熱板
30a‧‧‧露出面
40‧‧‧樹脂模具
51‧‧‧功率模組用基板單元
60‧‧‧半導體元件
70‧‧‧外部連接用引線架
80‧‧‧散熱片
81‧‧‧天板部
82‧‧‧冷卻部
83‧‧‧流路
100‧‧‧功率模組

Claims (9)

  1. 一種功率模組用基板單元，其特徵為具有陶瓷基板層，和經由接合於此陶瓷基板層之一方的面之複數的小電路層而加以構成之電路層，和接合於前述陶瓷基板層之另一方的面之金屬層，和接合於前述金屬層之一片的散熱板；各前述小電路層則作為具有接合於前述陶瓷基板層之前述一方的面之第1鋁層，和固相擴散接合於該第1鋁層之第1銅層的層積構造；前述金屬層則經由與前述第1鋁層同一材料而加以形成；前述散熱板則經由銅或銅合金而加以形成，對於前述金屬層而言加以固相擴散接合；將前述第1銅層之厚度作為t1(mm)、將前述第1銅層之接合面積作為A1(mm2)、將前述第1銅層之耐力作為σ 1(N/mm2)，而將在與前述金屬層之接合位置的前述散熱板的厚度作為t2(mm)、將前述散熱板之接合面積作為A2(mm2)、將前述散熱板之耐力作為σ 2(N/mm2)時，比率(t1×A1×σ 1)/(t2×A2×σ 2)則為0.80以上1.20以下。
  2. 如申請專利範圍第1項記載之功率模組用基板單元，其中，前述陶瓷基板層則經由與前述小電路層同數之小陶瓷基板而加以構成； 前述金屬層則經由與前述小電路層同數之小金屬層而加以構成；藉由前述小陶瓷基板而加以接合前述小電路層與前述小金屬層而成之複數之功率模組用基板，係拉開間隔而加以接合於前述散熱板上。
  3. 如申請專利範圍第1項記載之功率模組用基板單元，其中，前述陶瓷基板層則經由與前述小電路層同數之小陶瓷基板而加以構成；前述金屬層則由一片加以構成；將接合前述小電路層與前述小陶瓷基板之層積基板拉開間隔而加以接合於前述金屬層上而成之功率模組用基板，係藉由前述金屬層而加以接合於前述散熱板上。
  4. 如申請專利範圍第1項記載之功率模組用基板單元，其中，前述陶瓷基板層則由一片加以構成；前述金屬層則經由與前述小電路層同數之小金屬層而加以構成；將前述小電路層與前述小金屬層，藉由前述陶瓷基板層而拉開間隔而加以接合於該陶瓷基板層之面方向而成之功率模組用基板，係藉由前述金屬層而加以接合於前述散熱板上。
  5. 如申請專利範圍第1項記載之功率模組用基板單元，其中，前述陶瓷基板層則由一片加以構成之同時，前述金屬層則由一片加以構成；前述小電路層則拉開間隔而加以接合於前述陶瓷基板 層之前述一方的面，而加以接合前述金屬層於該陶瓷基板層之前述另一方的面而成之功率模組用基板，係藉由前述金屬層而加以接合於前述散熱板上。
  6. 如申請專利範圍第1項記載之功率模組用基板單元，其中，前述第1鋁層與前述第1銅層則藉由鈦層而加以固相擴散接合。
  7. 如申請專利範圍第1項記載之功率模組用基板單元，其中，前述金屬層與前述散熱板則藉由鈦層而加以固相擴散接合。
  8. 如申請專利範圍第1項記載之功率模組用基板單元，其中，前述第1鋁層與前述第1銅層，及前述金屬層與前述散熱板則藉由鈦層而加以固相擴散接合。
  9. 一種功率模組，其特徵為具備：如申請專利範圍第1項記載之前述功率模組用基板單元；和加以接合於前述功率模組用基板單元之前述小電路層之至少一個之半導體元件及外部連接用引線架；將前述半導體元件與前述功率模組用基板單元，除了前述散熱板之表面而加以封閉之樹脂模具等。
TW104121697A 2014-07-04 2015-07-03 功率模組用基板單元及功率模組 TWI649840B (zh)

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