TW201617637A - Hall sensor manufacturing method, hall sensor, and lens module - Google Patents
Hall sensor manufacturing method, hall sensor, and lens module Download PDFInfo
- Publication number
- TW201617637A TW201617637A TW104131016A TW104131016A TW201617637A TW 201617637 A TW201617637 A TW 201617637A TW 104131016 A TW104131016 A TW 104131016A TW 104131016 A TW104131016 A TW 104131016A TW 201617637 A TW201617637 A TW 201617637A
- Authority
- TW
- Taiwan
- Prior art keywords
- hall element
- external terminal
- external
- hall
- external terminals
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000007789 sealing Methods 0.000 claims abstract description 109
- 239000002184 metal Substances 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 53
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 46
- 229920005989 resin Polymers 0.000 description 25
- 239000011347 resin Substances 0.000 description 25
- 239000010408 film Substances 0.000 description 20
- 230000006698 induction Effects 0.000 description 14
- 238000007747 plating Methods 0.000 description 12
- 239000012790 adhesive layer Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/80—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Lens Barrels (AREA)
- Adjustment Of Camera Lenses (AREA)
Abstract
Description
本發明係關於一種霍爾感測器之製造方法及霍爾感測器與鏡頭模組。 The invention relates to a method for manufacturing a Hall sensor and a Hall sensor and a lens module.
作為檢測磁場之感測器,已知使用有霍爾元件之磁感測器。例如於專利文獻1中,記載有使用有片狀件(霍爾元件等磁感測器晶片)之無島構造之磁感測器及其製造方法。 As a sensor for detecting a magnetic field, a magnetic sensor using a Hall element is known. For example, Patent Document 1 describes a magnetic sensor using an islandless structure having a sheet member (a magnetic sensor wafer such as a Hall element) and a method of manufacturing the same.
[專利文獻1]國際公開第2014/091714號 [Patent Document 1] International Publication No. 2014/091714
且說,伴隨近年來之電子機器之薄型化、小型化,要求更薄型且小型之霍爾感測器。為使上述專利文獻1之磁感測器更薄,有效的是降低將片狀件與引線端子連接之導線之高度。為降低導線之高度,有效的是使片狀件與引線端子中之位於高位置之構件更低。於專利文獻1之磁感測器之情形時,使片狀件更薄對於磁感測器整體之薄型化為有效。又,為使專利文獻1之磁感測器更小型,有效的是縮短片狀件與引線端子之距離。然而,使片狀件變薄且縮短片狀件與引線端子之距離會產生以下問題。 In addition, with the thinning and miniaturization of electronic equipment in recent years, a thinner and smaller Hall sensor is required. In order to make the magnetic sensor of the above Patent Document 1 thinner, it is effective to lower the height of the wire connecting the sheet member to the lead terminal. In order to lower the height of the wires, it is effective to lower the members of the chip and the lead terminals at a high position. In the case of the magnetic sensor of Patent Document 1, making the sheet member thinner is effective for thinning the entire magnetic sensor. Further, in order to make the magnetic sensor of Patent Document 1 smaller, it is effective to shorten the distance between the sheet member and the lead terminal. However, thinning the sheet member and shortening the distance between the sheet member and the lead terminal cause the following problems.
圖1係用以說明本發明之霍爾感測器之課題之剖面構成圖。圖1 係表示霍爾感測器之製造步驟之一部分之圖,其表示使用吸具600將霍爾元件510載置於由引線端子525、527所包圍之區域之步驟。引線端子525、527載置於基材530上,於霍爾元件510之背面形成有絕緣層540。霍爾元件510具備磁感應部512與電極部513a、513b。於霍爾元件510較薄、且載置霍爾元件510之位置與引線端子525、527之距離較小之情形時,在使用吸具600而載置霍爾元件510時,有吸具600與引線端子525、527接觸之虞。若吸具600與引線端子525、527接觸,則有將霍爾元件510載置於與通常載置之位置不同之位置之虞。霍爾元件510之位置不均導致磁感應部512之位置不均,最終導致霍爾感測器之磁性特性不均。再者,A表示吸具與引線端子之接觸部位。 Fig. 1 is a cross-sectional structural view for explaining the subject of the Hall sensor of the present invention. figure 1 A diagram showing a part of the manufacturing steps of the Hall sensor, which shows the step of placing the Hall element 510 on the region surrounded by the lead terminals 525, 527 using the suction tool 600. The lead terminals 525 and 527 are placed on the substrate 530, and an insulating layer 540 is formed on the back surface of the Hall element 510. The Hall element 510 includes a magnetic induction portion 512 and electrode portions 513a and 513b. When the Hall element 510 is thin and the distance between the position where the Hall element 510 is placed and the lead terminals 525 and 527 is small, when the Hall element 510 is placed by using the suction tool 600, the suction tool 600 and the suction device 600 are provided. The lead terminals 525, 527 are in contact with each other. When the suction tool 600 is in contact with the lead terminals 525 and 527, the Hall element 510 is placed at a position different from the position normally placed. The uneven position of the Hall element 510 causes the position of the magnetic sensing portion 512 to be uneven, eventually resulting in uneven magnetic characteristics of the Hall sensor. Furthermore, A denotes a contact portion between the suction tool and the lead terminal.
本發明係鑒於此種問題而完成者,其目的在於提供一種薄型且小型、磁性特性之不均少之霍爾感測器之製造方法及霍爾感測器與鏡頭模組。 The present invention has been made in view of such a problem, and an object thereof is to provide a method of manufacturing a Hall sensor which is thin and small, has few variations in magnetic characteristics, and a Hall sensor and a lens module.
根據本發明之一態樣,以如下事項作為特徵。 According to an aspect of the invention, the following matters are taken as a feature.
(1).一種霍爾感測器,其具備:霍爾元件,其具有複數個電極部;複數個外部端子,其等配置於上述霍爾元件之周圍;複數個導線,其等分別電性連接上述複數個電極部之各電極部與上述複數個外部端子之各外部端子;及密封構件,其密封上述霍爾元件、上述複數個導線、上述各外部端子之與上述導線連接之面即第2面;上述各外部端子之與上述第2面為相反側之第1面自上述密封構件之底面露出,上述複數個外部端子至少包含第1外部端子,上述第1外部端子於上述第2面上,且於俯視時,於包圍上述霍爾元件之區域之周邊上具有階差,以上述階差為邊界,上述第1外部端子於靠近上述霍爾元件之側具有第1部位,於遠離上述霍爾元件之側具有第2部位,以上述密封構件之底面為基準面,將至上述第1外部端子之上述第1部位之上述第2 面為止之高度形成為低於至上述第2部位之上述第2面為止之高度。 (1) A Hall sensor comprising: a Hall element having a plurality of electrode portions; a plurality of external terminals disposed around the Hall element; and a plurality of wires, respectively And connecting the electrode portions of the plurality of electrode portions and the external terminals of the plurality of external terminals; and the sealing member sealing the Hall element, the plurality of wires, and the surface of the external terminals connected to the wires a first surface of the external terminal opposite to the second surface, which is exposed from a bottom surface of the sealing member, wherein the plurality of external terminals include at least a first external terminal, and the first external terminal is on the second surface And having a step on a periphery of a region surrounding the Hall element in a plan view, and the first external terminal has a first portion on a side close to the Hall element, and is away from the above a second portion on the side of the Hall element, and the second surface of the first portion of the first external terminal is used as a reference surface of the sealing member The height of the surface is formed to be lower than the height of the second surface to the second portion.
(2).如(1),其中上述霍爾元件係以上述密封構件之底面為基準面,將上述霍爾元件之最高點配置於較上述第1外部端子之上述第1部位之上述第2面高、且較上述第2部位之上述第2面低的位置。 (1) wherein the Hall element has a bottom surface of the sealing member as a reference surface, and a highest point of the Hall element is disposed on the second portion of the first portion of the first external terminal. The surface is high and lower than the second surface of the second portion.
(3).如(1)或(2),其中將自上述基準面至上述霍爾元件之最高點為止之高度設為T,且將自上述基準面起之上述第2部位之上述第2面之高度設為p2,上述霍爾元件係配置於p2<T<1.5×p2之位置。 (3) The method of (1) or (2), wherein a height from the reference surface to a highest point of the Hall element is T, and the second portion of the second portion from the reference surface The height of the surface is set to p2, and the Hall element is placed at a position where p2 < T < 1.5 × p2.
(4).如(1)至(3)中任一項,其中上述複數個外部端子進而包含第2至第4外部端子,上述第1至第4外部端子配置成使連結上述第1外部端子與上述第3外部端子之假想直線、與連結上述第2外部端子與上述第4外部端子之假想直線於俯視時交叉,上述霍爾元件於俯視時為矩形狀,且於俯視時配置於使上述霍爾元件之4個頂點配置於上述第1外部端子與上述第2外部端子之間之區域、上述第2外部端子與上述第3外部端子之間之區域、上述第3外部端子與上述第4外部端子之間之區域、及上述第4外部端子與上述第1外部端子之間之區域的位置。 In any one of (1) to (3), the plurality of external terminals further include second to fourth external terminals, and the first to fourth external terminals are arranged to connect the first external terminals The virtual straight line of the third external terminal and the virtual straight line connecting the second external terminal and the fourth external terminal intersect in a plan view, and the Hall element has a rectangular shape in plan view and is disposed in a plan view. Four vertices of the Hall element are disposed in a region between the first external terminal and the second external terminal, a region between the second external terminal and the third external terminal, the third external terminal, and the fourth A region between the external terminals and a position of a region between the fourth external terminal and the first external terminal.
(5).如(1)至(4)中任一項,其具備絕緣層,該絕緣層配置於上述霍爾元件之與配置有上述複數個電極部之面相反側之面,上述絕緣層自上述密封構件之上述底面露出。 (5) The insulating layer is provided on any one of (1) to (4), wherein the insulating layer is disposed on a surface of the Hall element opposite to a surface on which the plurality of electrode portions are disposed, the insulating layer The bottom surface of the sealing member is exposed.
(6).如(1)至(5)中任一項,其中上述複數個外部端子之各外部端子於上述第2面上具有上述階差,以上述階差為邊界,上述各外部端子於靠近上述霍爾元件之側具有上述第1部位,於遠離上述霍爾元件之側具有上述第2部位,以上述密封構件之底面為基準面,將至上述各外部端子之上述第1部位之上述第2面為止之高度形成為低於至上述第2部位之上述第2面為止之高度。 (6) The external terminal of the plurality of external terminals having the step on the second surface, wherein the external terminals are The first portion is provided on a side closer to the Hall element, and the second portion is provided on a side away from the Hall element, and the bottom surface of the sealing member is used as a reference surface, and the first portion of each of the external terminals is The height of the second surface is formed to be lower than the height of the second surface to the second portion.
(7).如(6),其中各外部端子於俯視時,於以上述霍爾元件為中心之圓形狀、多邊形狀、或其等組合之形狀之區域之周邊上,形成有上 述階差。 (7), wherein (6), wherein each of the external terminals is formed on a periphery of a region having a circular shape, a polygonal shape, or a combination thereof in a shape of the Hall element as a center in a plan view Said step difference.
(8).一種霍爾感測器,其具備:霍爾元件,其具有複數個電極部;複數個外部端子,其等配置於上述霍爾元件之周圍;複數個導線,其等分別電性連接上述複數個電極部之各電極部與上述複數個外部端子之各外部端子;及密封構件,其密封上述霍爾元件、上述複數個導線、及上述各外部端子之與上述導線連接之面即第2面;上述各外部端子之與上述第2面為相反側之第1面自上述密封構件之底面露出,上述各外部端子自連接有上述複數個導線之第2部位朝較上述第2部位更靠近上述霍爾元件之第1部位,而形成有使以上述密封構件之底面為基準面之上述第2部位之第2面側之高度低於以上述密封構件之底面為基準面之上述第1部位之第2面側之高度的階差。 (8) A Hall sensor comprising: a Hall element having a plurality of electrode portions; a plurality of external terminals disposed around the Hall element; and a plurality of wires, respectively And connecting the electrode portions of the plurality of electrode portions and the external terminals of the plurality of external terminals; and the sealing member sealing the Hall element, the plurality of wires, and a surface of the external terminals connected to the wires a second surface; a first surface of the external terminal opposite to the second surface is exposed from a bottom surface of the sealing member, and each of the external terminals is connected to a second portion of the plurality of wires to be closer to the second portion Further, the first portion of the Hall element is formed such that a height of the second surface side of the second portion having the bottom surface of the sealing member as a reference surface is lower than a height of the bottom surface of the sealing member The difference in height of the second surface side of the 1st part.
(9).如(8),其中自上述密封構件之底面至上述霍爾元件之上述電極部與上述複數個導線接觸之接觸點為止之高度低於以上述密封構件之底面為基準面之上述第1部位之第2面側之高度。 (9), wherein the height from the bottom surface of the sealing member to the contact point between the electrode portion of the Hall element and the plurality of wires is lower than the surface of the sealing member as a reference surface The height of the second surface side of the first portion.
(10).如(8)或(9),其中上述階差於俯視時,具有斜面形狀或向密封構件之底面側凹陷之曲線形狀。 (10). (8) or (9), wherein the step is formed in a curved shape or a curved shape which is recessed toward the bottom surface side of the sealing member in a plan view.
(11).如(8)至(10)中任一項,其中上述各外部端子於俯視時,於以上述霍爾元件為中心之圓形狀、多邊形狀、或其等組合之形狀之區域之周邊上,形成有上述階差。 In any one of (8) to (10), wherein each of the external terminals is in a shape of a circular shape, a polygonal shape, or a combination thereof in a shape of the Hall element in a plan view. On the periphery, the above-described step difference is formed.
(12).如(8)至(11)中任一項,其中上述霍爾元件具有基板、設置於上述基板上或基板內之磁感應、及與上述磁感應部連接之上述複數個電極部,具備絕緣層,其配置於上述霍爾元件之與配置有上述複數個電極部之面相反側之面,上述絕緣層自上述密封構件之上述底面露出。 The above-mentioned Hall element includes a substrate, magnetic induction provided on the substrate or in the substrate, and the plurality of electrode portions connected to the magnetic induction portion, and the plurality of electrode portions are provided. The insulating layer is disposed on a surface of the Hall element opposite to a surface on which the plurality of electrode portions are disposed, and the insulating layer is exposed from the bottom surface of the sealing member.
(13).一種鏡頭模組,其具備:如(1)至(12)中任一項之霍爾感測器、安裝有磁鐵之鏡頭座、及根據來自上述霍爾感測器之上述外部端 子之輸出信號而使上述磁鐵移動之驅動線圈。 (13) A lens module comprising: the Hall sensor according to any one of (1) to (12), a lens mount to which a magnet is mounted, and the above-described external portion from the Hall sensor; end The drive signal of the sub-magnet to move the magnet.
(14).一種霍爾感測器之製造方法,該霍爾感測器具備複數個外部端子、具有複數個電極部之霍爾元件、及分別電性連接上述複數個外部端子之各外部端子與上述複數個電極部之各電極部之複數個導線,該霍爾感測器之製造方法具備:外部端子配置步驟,將形成有上述複數個外部端子之金屬板配置於基材上;霍爾元件配置步驟,將上述霍爾元件配置於由上述複數個外部端子包圍之區域;導線連接步驟,利用上述複數個導線將上述複數個電極部與上述複數個外部端子電性連接;密封步驟,利用密封構件將上述霍爾元件、上述複數個導線、上述各外部端子之與上述導線連接之面即第2面進行密封;及露出步驟,去除上述基材,使上述各外部端子之與上述第2面為相反側之第1面自上述密封構件露出;上述複數個外部端子至少包含第1外部端子,上述第1外部端子於上述第2面上,且於俯視時,於以載置上述霍爾元件之位置為中心之橢圓形狀或多邊形狀之區域之周邊上具有階差,以上述階差為邊界,上述第1外部端子於靠近載置上述霍爾元件之位置之側具有第1部位,於遠離載置上述霍爾元件之位置之側具有第2部位,上述第1外部端子於將上述金屬板配置於上述基材上時,以上述基材之配置有上述金屬板之面為基準面,將至上述第1部位之上述第2面為止之高度形成為低於至上述第2部位之上述第2面為止之高度。 (14) A method of manufacturing a Hall sensor, the Hall sensor comprising a plurality of external terminals, a Hall element having a plurality of electrode portions, and respective external terminals electrically connected to the plurality of external terminals a plurality of wires of the electrode portions of the plurality of electrode portions, the method for manufacturing the Hall sensor includes an external terminal arrangement step of disposing a metal plate on which the plurality of external terminals are formed on a substrate; Hall a component arrangement step of disposing the Hall element in a region surrounded by the plurality of external terminals; and a wire connecting step of electrically connecting the plurality of electrode portions and the plurality of external terminals by the plurality of wires; and sealing step The sealing member seals the Hall element, the plurality of wires, and the second surface of the external terminals connected to the wires, and an exposing step of removing the substrate to make the external terminals and the second surface The first surface on the opposite side is exposed from the sealing member; the plurality of external terminals include at least a first external terminal, and the first external terminal On the second surface, in a plan view, there is a step on the periphery of the elliptical or polygonal region centering on the position at which the Hall element is placed, and the first outer portion is bounded by the step difference The terminal has a first portion on a side close to a position on which the Hall element is placed, and a second portion on a side away from a position on which the Hall element is placed, wherein the first external terminal is disposed on the substrate In the upper case, the height of the second surface of the first portion is set to be lower than the height of the second surface of the second portion, with the surface of the substrate on which the metal plate is disposed as a reference surface .
(15).一種霍爾感測器之製造方法,該霍爾感測器具備複數個外部端子、具有複數個電極部之霍爾元件、及分別電性連接上述複數個外部端子之各外部端子與上述複數個電極部之各電極部之複數個導線,該霍爾感測器之製造方法具備:外部端子配置步驟,將形成有上述複數個外部端子之金屬板配置於基材上;霍爾元件配置步驟,將上述霍爾元件配置於由上述複數個外部端子包圍之區域;導線連接步驟,利 用上述複數個導線將上述複數個電極部與上述複數個外部端子電性連接;密封步驟,利用密封構件將上述霍爾元件、上述複數個導線、及上述各外部端子之與上述導線連接之面即第2面進行密封;及露出步驟,去除上述基材,使上述各外部端子之與上述第2面為相反側之第1面自上述密封構件露出;上述複數個外部端子至少包含第1外部端子,上述第1外部端子於上述第2面上,且於俯視時,於與以載置上述霍爾元件之位置為中心之吸具之前端之形狀對應之位置具有階差,以上述階差為邊界,上述第1外部端子於靠近載置上述霍爾元件之位置之側具有第1部位,於遠離載置上述霍爾元件之位置之側具有第2部位,上述第1外部端子於將上述金屬板配置於上述基材上時,以上述基材之配置有上述金屬板之面為基準面,將至上述第1部位之上述第2面為止之高度形成為低於至上述第2部位之上述第2面為止之高度。 (15) A method of manufacturing a Hall sensor, the Hall sensor comprising a plurality of external terminals, a Hall element having a plurality of electrode portions, and respective external terminals electrically connected to the plurality of external terminals a plurality of wires of the electrode portions of the plurality of electrode portions, the method for manufacturing the Hall sensor includes an external terminal arrangement step of disposing a metal plate on which the plurality of external terminals are formed on a substrate; Hall a component arrangement step of disposing the Hall element in an area surrounded by the plurality of external terminals; And electrically connecting the plurality of electrode portions to the plurality of external terminals by using the plurality of wires; and sealing step of connecting the Hall element, the plurality of wires, and the external terminals to the wires by using a sealing member That is, the second surface is sealed; and the exposing step is performed to remove the substrate, and the first surface of the external terminal opposite to the second surface is exposed from the sealing member; and the plurality of external terminals include at least the first outer portion a terminal, wherein the first external terminal is on the second surface, and has a step at a position corresponding to a shape of a front end of the suction device centering on a position at which the Hall element is placed in a plan view, with the step In the boundary, the first external terminal has a first portion on a side closer to a position on which the Hall element is placed, and a second portion on a side away from a position on which the Hall element is placed, wherein the first external terminal When the metal plate is disposed on the base material, the height of the surface of the first portion is set to be the surface of the base material on which the metal plate is placed as a reference surface To up to a height above the second surface of the second portion.
(16).如(14)或(15),其中上述霍爾元件配置步驟包含以下步驟,即,以上述基材之配置有上述金屬板之面為基準面,將上述霍爾元件配置於使上述霍爾元件之最高點較上述第1外部端子之上述第1部位之上述第2面高、且較上述第2部位之上述第2面低的位置。 (16) or (15), wherein the Hall element disposing step includes the step of disposing the Hall element on a surface of the substrate on which the metal plate is disposed as a reference surface The highest point of the Hall element is higher than the second surface of the first portion of the first external terminal and lower than the second surface of the second portion.
(17).如(14)至(16)中任一項,其中上述霍爾元件配置步驟包含以下步驟,即,將自上述基準面至上述霍爾元件之最高點為止之高度設為T,將自上述基準面起之上述第2部位之上述第2面之高度設為p2,將上述霍爾元件配置於p2<T<1.5×p2之位置。 (17) The method according to any one of (14) to (16) wherein the Hall element arranging step includes the step of setting a height from the reference surface to a highest point of the Hall element to T, The height of the second surface of the second portion from the reference surface is set to p2, and the Hall element is placed at a position where p2 < T < 1.5 × p2.
(18).如(14)至(17)中任一項,其中上述複數個外部端子進而包含第2至第4外部端子,上述第1至第4外部端子配置成使連結上述第1外部端子與上述第3外部端子之假想直線、與連結上述第2外部端子與上述第4外部端子之假想直線於俯視時交叉,上述霍爾元件於俯視時為矩形狀,上述霍爾元件配置步驟包含以下步驟,即,將上述霍爾元件配置成於俯視時使上述霍爾元件之4個頂點配置於上述第1外部端子與 上述第2外部端子之間之區域、上述第2外部端子與上述第3外部端子之間之區域、上述第3外部端子與上述第4外部端子之間之區域、及上述第4外部端子與上述第1外部端子之間之區域。 In any one of (14) to (17), the plurality of external terminals further include second to fourth external terminals, and the first to fourth external terminals are arranged to connect the first external terminal The virtual straight line with the third external terminal and the virtual straight line connecting the second external terminal and the fourth external terminal intersect in a plan view, and the Hall element has a rectangular shape in plan view, and the Hall element arrangement step includes the following a step of arranging the Hall element so that four vertices of the Hall element are disposed on the first external terminal and in a plan view a region between the second external terminals, a region between the second external terminal and the third external terminal, a region between the third external terminal and the fourth external terminal, and the fourth external terminal and the The area between the first external terminals.
(19).如(14)至(18)中任一項,其包含於上述基材與上述霍爾元件之間形成絕緣層之絕緣層形成步驟,上述露出步驟包含使上述絕緣層自上述密封構件露出之步驟。 (19) The insulating layer forming step of forming an insulating layer between the substrate and the Hall element, wherein the exposing step comprises: sealing the insulating layer from the sealing layer The step of exposing the component.
(20).如(14)至(19)中任一項,其中上述複數個外部端子之各外部端子於上述第2面上具有上述階差,以上述階差為邊界,上述各外部端子於靠近載置上述霍爾元件之位置之側具有上述第1部位,於遠離載置上述霍爾元件之位置之側具有上述第2部位,上述各外部端子於將上述金屬板配置於上述基材上時,以上述基材之配置有上述金屬板之面為基準面,將至上述各外部端子之上述第1部位之上述第2面為止之高度形成為低於至上述第2部位之上述第2面為止之高度。 (20) The external terminal of the plurality of external terminals having the step on the second surface, wherein the external terminals are The first portion is provided on a side closer to a position at which the Hall element is placed, and the second portion is provided on a side away from a position at which the Hall element is placed, and the external terminals are disposed on the substrate When the surface of the substrate on which the metal plate is disposed is used as a reference surface, the height of the second surface to the first portion of each of the external terminals is formed to be lower than the second portion of the second portion. The height of the face.
根據本發明之一態樣,可提供一種薄型且小型、磁性特性之不均少之霍爾感測器之製造方法及霍爾感測器與鏡頭模組。 According to an aspect of the present invention, a method of manufacturing a Hall sensor with a thin and small size and a small variation in magnetic characteristics, and a Hall sensor and a lens module can be provided.
10‧‧‧霍爾元件 10‧‧‧ Hall element
11‧‧‧基板 11‧‧‧Substrate
12‧‧‧磁感應部 12‧‧‧Magnetic induction department
13a‧‧‧電極部 13a‧‧‧Electrode
13b‧‧‧電極部 13b‧‧‧Electrode
13c‧‧‧電極部 13c‧‧‧Electrode
13d‧‧‧電極部 13d‧‧‧Electrode
21a‧‧‧引線端子 21a‧‧‧Lead terminal
21b‧‧‧引線端子 21b‧‧‧Lead terminal
21c‧‧‧引線端子 21c‧‧‧Lead terminal
21d‧‧‧引線端子 21d‧‧‧Lead terminal
30‧‧‧基材 30‧‧‧Substrate
31a‧‧‧導線 31a‧‧‧Wire
31b‧‧‧導線 31b‧‧‧Wire
31c‧‧‧導線 31c‧‧‧Wire
31d‧‧‧導線 31d‧‧‧Wire
40‧‧‧絕緣層 40‧‧‧Insulation
50‧‧‧密封構件 50‧‧‧ Sealing members
60‧‧‧外裝鍍敷層 60‧‧‧External plating
60a‧‧‧外裝鍍敷層 60a‧‧‧Outer plating
60b‧‧‧外裝鍍敷層 60b‧‧‧Outer plating
60c‧‧‧外裝鍍敷層 60c‧‧‧External plating
60d‧‧‧外裝鍍敷層 60d‧‧‧Outer plating
80‧‧‧耐熱性膜 80‧‧‧Heat resistant film
90‧‧‧鑄模模具 90‧‧‧Mold mould
91‧‧‧下模具 91‧‧‧ Lower mold
92‧‧‧上模具 92‧‧‧Upper mold
93‧‧‧切割保護膠帶 93‧‧‧ cutting protective tape
100‧‧‧霍爾感測器 100‧‧‧ Hall sensor
120‧‧‧金屬板 120‧‧‧Metal plates
130‧‧‧黏著層 130‧‧‧Adhesive layer
510‧‧‧霍爾元件 510‧‧‧ Hall element
512‧‧‧磁感應部 512‧‧‧Magnetic induction department
513a‧‧‧電極部 513a‧‧‧Electrode
513b‧‧‧電極部 513b‧‧‧Electrode
525‧‧‧引線端子 525‧‧‧Lead terminal
527‧‧‧引線端子 527‧‧‧Lead terminal
530‧‧‧基材 530‧‧‧Substrate
540‧‧‧絕緣層 540‧‧‧Insulation
600‧‧‧吸具 600‧‧‧ suction
A‧‧‧接觸部位 A‧‧‧Contacts
a‧‧‧第1連接點 A‧‧‧1st connection point
B‧‧‧區域 B‧‧‧Area
b‧‧‧第2連接點 B‧‧‧2nd connection point
D‧‧‧階差 D‧‧‧ step
E‧‧‧底面 E‧‧‧ bottom
Ga‧‧‧表面實施半蝕刻後之部分 Part of the surface of the Ga‧‧‧ surface after half etching
Gb‧‧‧背面實施半蝕刻後之部分 Part of the Gb‧‧‧ back half-etched
H‧‧‧孔部 H‧‧‧ Hole Department
h1‧‧‧高度 H1‧‧‧ Height
h2‧‧‧高度 H2‧‧‧ height
M‧‧‧基準面 M‧‧‧ datum
M1‧‧‧第1面 M1‧‧‧ first side
M2‧‧‧第2面 M2‧‧‧2nd
N1‧‧‧第1部位 N1‧‧‧Part 1
N2‧‧‧第2部位 N2‧‧‧ second part
p1‧‧‧高度 P1‧‧‧ height
p2‧‧‧高度 P2‧‧‧ height
S‧‧‧側面 S‧‧‧ side
T‧‧‧最高點 T‧‧‧ highest point
t‧‧‧高度 T‧‧‧ Height
圖1係用以說明本發明之霍爾感測器之課題之剖面構成圖。 Fig. 1 is a cross-sectional structural view for explaining the subject of the Hall sensor of the present invention.
圖2(a)至(c)係用以說明本發明之霍爾感測器之實施形態1之構成圖。 2(a) to 2(c) are views for explaining the configuration of the first embodiment of the Hall sensor of the present invention.
圖3係圖2(a)至(c)所示之霍爾感測器之整體立體圖。 Figure 3 is an overall perspective view of the Hall sensor shown in Figures 2(a) through (c).
圖4(a)及(b)係具體之霍爾元件之構成圖。 4(a) and (b) are structural diagrams of specific Hall elements.
圖5係用以說明本發明之霍爾感測器之剖面構成圖。 Figure 5 is a cross-sectional view showing the structure of the Hall sensor of the present invention.
圖6(a)及(b)係表示本實施形態1之霍爾感測器之製造中使用之金屬板之圖。 Fig. 6 (a) and (b) are views showing a metal plate used in the manufacture of the Hall sensor of the first embodiment.
圖7(a)至(e)係表示霍爾感測器之製造方法之步驟之俯視圖。 7(a) to 7(e) are plan views showing the steps of a method of manufacturing a Hall sensor.
圖8(a)至(d)係表示霍爾感測器之製造方法之步驟之剖視圖。 8(a) to (d) are cross-sectional views showing the steps of a method of manufacturing a Hall sensor.
於以下詳細之說明中,係對諸多特定之細節進行記載以提供本發明之實施形態之完整之理解。然而可明確得知,即便無相關之特定之細節,亦可以1個以上之實施態樣而實施。此外,為簡化圖式,亦以略圖表示周知之構造及裝置。 In the following detailed description, numerous specific details are set forth However, it is clear that even without specific details, it can be implemented in one or more implementations. In addition, well-known structures and devices are also shown in the simplification of the drawings.
以下,參照圖式對本發明之各實施形態進行說明。 Hereinafter, each embodiment of the present invention will be described with reference to the drawings.
(構成) (constitution)
圖2(a)至(c)係用以說明本發明之霍爾感測器之實施形態1之構成圖,圖2(a)表示圖2(b)之A-A線剖視圖,圖2(b)表示圖2(a)之俯視圖,圖2(c)表示圖2(a)之仰視圖,圖3表示圖2(a)至(c)所示之霍爾感測器之整體立體圖。再者,Ga表示表面實施半蝕刻後之部分,Gb表示背面實施半蝕刻後之部分。 2(a) to 2(c) are views for explaining the configuration of the first embodiment of the Hall sensor of the present invention, and Fig. 2(a) is a cross-sectional view taken along line AA of Fig. 2(b), and Fig. 2(b) 2(a) is a top view of FIG. 2(a), and FIG. 3 is an overall perspective view of the Hall sensor shown in FIGS. 2(a) to (c). Further, Ga denotes a portion after the surface is half-etched, and Gb denotes a portion after the half etching is performed on the back surface.
本實施形態1之霍爾感測器100具備霍爾元件10、複數個引線端子21a至21d(外部端子)、複數個導線31a至31d、及密封構件50。 The Hall sensor 100 according to the first embodiment includes a Hall element 10, a plurality of lead terminals 21a to 21d (external terminals), a plurality of wires 31a to 31d, and a sealing member 50.
霍爾元件10具有基板11、設置於該基板11上(或基板11內)之磁感應部12、及與該磁感應部12連接之複數個電極部13a至13d。再者,於圖2(a)中,對將磁感應部12設置於基板11上之情形以放大圖表示。 The Hall element 10 includes a substrate 11, a magnetic sensing portion 12 provided on the substrate 11 (or in the substrate 11), and a plurality of electrode portions 13a to 13d connected to the magnetic sensing portion 12. Furthermore, in FIG. 2(a), the case where the magnetic induction portion 12 is provided on the substrate 11 is shown in an enlarged view.
又,複數個引線端子21a至21d係沿霍爾元件10之周圍、即密封構件50之底面以包圍霍爾元件10之四角之方式配置。 Further, a plurality of lead terminals 21a to 21d are disposed along the periphery of the Hall element 10, that is, the bottom surface of the sealing member 50 so as to surround the four corners of the Hall element 10.
又,複數個導線31a至31d電性連接複數個電極部13a至13d之各電極部13a至13d之各者與複數個引線端子21a至21d之各引線端子21a至21d之各者。 Further, the plurality of wires 31a to 31d are electrically connected to each of the electrode portions 13a to 13d of the plurality of electrode portions 13a to 13d and each of the lead terminals 21a to 21d of the plurality of lead terminals 21a to 21d.
又,密封構件50覆蓋霍爾元件10、複數個引線端子21a至21d、及複數個導線31a至31d。作為密封構件50,較佳為鑄模樹脂等樹脂構 件。 Further, the sealing member 50 covers the Hall element 10, the plurality of lead terminals 21a to 21d, and the plurality of wires 31a to 31d. As the sealing member 50, a resin structure such as a mold resin is preferable. Pieces.
又,各引線端子21a至21d具有與上述各導線31a至31d連接之第2面M2、及與該第2面M2相反側之第1面M1,該第1面M1自密封構件50之底面E露出。 Further, each of the lead terminals 21a to 21d has a second surface M2 connected to the respective lead wires 31a to 31d and a first surface M1 opposite to the second surface M2. The first surface M1 is self-sealing from the bottom surface E of the sealing member 50. Exposed.
又,對於複數個引線端子21a至21d中之至少1個引線端子21a至21d之任一者,於第2面M2具有階差D。即,引線端子帶有階差。較佳為對於引線端子21a至21d之所有引線端子,於第2面M2具有階差D。 Further, any one of the plurality of lead terminals 21a to 21d, at least one of the lead terminals 21a to 21d, has a step D on the second surface M2. That is, the lead terminals have a step. It is preferable that all of the lead terminals of the lead terminals 21a to 21d have a step D on the second surface M2.
又,以階差D為邊界,複數個引線端子21a至21d於具有階差D之各引線端子21a至21d之靠近霍爾元件10之側具有第1部位N1,於遠離霍爾元件10之側具有第2部位N2,且自密封構件50之底面E至第1部位N1之第2面M2為止之高度p1構成為低於自密封構件50之底面E至第2部位N2之第2面M2為止之高度p2。 Further, with the step D as a boundary, the plurality of lead terminals 21a to 21d have the first portion N1 on the side close to the Hall element 10 of each of the lead terminals 21a to 21d having the step D, on the side away from the Hall element 10. The height p1 from the bottom surface E of the sealing member 50 to the second surface M2 of the first portion N1 is lower than the second surface M2 from the bottom surface E of the sealing member 50 to the second surface M2 of the second portion N2. The height is p2.
即,自密封構件50之底面E至第1部位N1之第2面M2為止之高度p1、與自密封構件50之底面E至第2部位N2之第2面M2為止之高度p2的關係具有p1<p2之關係。又,各導線31a至31d於具有階差D之各引線端子21a至21d之第2部位N2之第2面M2連接。 In other words, the relationship between the height p1 from the bottom surface E of the sealing member 50 to the second surface M2 of the first portion N1 and the height p2 from the bottom surface E of the sealing member 50 to the second surface M2 of the second portion N2 has p1. <p2 relationship. Further, each of the wires 31a to 31d is connected to the second surface M2 of the second portion N2 of each of the lead terminals 21a to 21d having the step D.
本實施形態中,外部端子21a至21d自連接有複數個導線之第2部位N2朝較第2部位N2更靠近霍爾元件之第1部位N1,而形成有使以密封構件之底面E為基準面之第2部位N2之第2面側之高度p2低於以密封構件之底面E為基準面之第1部位N1之第2面側之高度p1的階差。階差較佳為,於剖視時為具有斜面形狀或向密封構件之底面側凹陷之曲線形狀之形態。階差D具有平坦之上表面與下表面,上表面與下表面之間可為斜面形狀、曲線形狀、或其等組合,亦可自上表面以斜面形狀、曲線形狀、或其等組合而到達至外部端子之端部。 In the present embodiment, the external terminals 21a to 21d are formed such that the second portion N2 to which the plurality of wires are connected is closer to the first portion N1 of the Hall element than the second portion N2, and the bottom surface E of the sealing member is formed as a reference. The height p2 of the second surface side of the second portion N2 of the surface is lower than the height difference p1 of the second surface side of the first portion N1 with the bottom surface E of the sealing member as the reference surface. The step is preferably a shape having a slope shape or a curved shape that is recessed toward the bottom surface side of the sealing member in the cross-sectional view. The step D has a flat upper surface and a lower surface, and the upper surface and the lower surface may be a bevel shape, a curved shape, or a combination thereof, or may be obtained from the upper surface in a bevel shape, a curved shape, or a combination thereof. To the end of the external terminal.
且說,一般而言,在將霍爾元件10載置於特定之位置時使用吸具。吸具之前端多為橢圓形狀或多邊形狀,為防止吸具與複數個引線 端子21a至21d之接觸,於俯視時,於以霍爾元件10為中心之橢圓形狀或多邊形狀之區域之周邊上設置有階差D。即,於俯視時,於與以霍爾元件10為中心且用於配置霍爾元件時之吸具之前端之形狀對應之位置設置有階差D。又,吸具之前端尤其多為圓形狀,故而為防止吸具之接觸,較佳為於以霍爾元件10為中心之圓周上設置階差D。再者,階差D形成於包圍霍爾元件10之區域之周邊上。亦可以霍爾元件10為中心而設置於俯視時為圓形狀、多邊形狀或其等組合之形狀之區域之周邊上。具體而言,可列舉正圓區域之周邊上、橢圓區域之周邊上、多邊形區域之周邊上、及將曲線與直線組合而成之形狀之區域之周邊上等。 In other words, in general, the suction device is used when the Hall element 10 is placed at a specific position. The front end of the suction device is mostly elliptical or polygonal, in order to prevent the suction device and the plurality of leads The contact of the terminals 21a to 21d is provided with a step D on the periphery of an elliptical or polygonal region centered on the Hall element 10 in plan view. That is, in a plan view, a step D is provided at a position corresponding to the shape of the front end of the suction tool centering on the Hall element 10 and for arranging the Hall element. Further, since the front end of the suction tool is particularly round in shape, it is preferable to set the step D on the circumference centering on the Hall element 10 in order to prevent the contact of the suction tool. Further, a step D is formed on the periphery of the region surrounding the Hall element 10. The Hall element 10 may be provided on the periphery of a region having a circular shape, a polygonal shape, or a combination thereof in a plan view. Specifically, the periphery of the perfect circle region, the periphery of the elliptical region, the periphery of the polygonal region, and the periphery of the region in which the curved line and the straight line are combined may be cited.
又,複數個引線端子21a至21d中之至少1個引線端子具有階差D,且具有p1<p2之關係,藉此可抑制導線與引線端子之邊緣接觸而斷線。又,自霍爾感測器整體之強度之方面而言,較佳為將引線端子上之第1部位N1之面積設為儘可能小之面積。 Further, at least one of the plurality of lead terminals 21a to 21d has a step D and has a relationship of p1 < p2, whereby the wire can be prevented from being broken by contact with the edge of the lead terminal. Further, from the viewpoint of the strength of the entire Hall sensor, it is preferable to make the area of the first portion N1 on the lead terminal as small as possible.
於引線端子21a之第2面M2具有複數個階差之情形時,將最靠近霍爾元件10之階差設為階差D,以階差D為邊界,將靠近霍爾元件10之側設為第1部位N1,將遠離霍爾元件10之側設為第2部位N2。關於引線端子21b至21d亦相同。形成於引線端子21a至21d之第2面M2之階差D由密封構件50密封。 When the second surface M2 of the lead terminal 21a has a plurality of steps, the step difference closest to the Hall element 10 is set to a step D, and the step D is set as a boundary, and the side closer to the Hall element 10 is provided. In the first portion N1, the side away from the Hall element 10 is referred to as a second portion N2. The same applies to the lead terminals 21b to 21d. The step D formed on the second surface M2 of the lead terminals 21a to 21d is sealed by the sealing member 50.
又,自密封構件50之底面E至第1部位N1之第2面M2為止之高度p1構成為低於自密封構件50之底面E至霍爾元件10之最高點為止之高度h1。於本例之情形時,霍爾元件10之最高點為各電極部13a至13d,故而高度p1構成為低於自密封構件50之底面E至霍爾元件10之各電極部13a至13d為止之高度h1。 Further, the height p1 from the bottom surface E of the sealing member 50 to the second surface M2 of the first portion N1 is configured to be lower than the height h1 from the bottom surface E of the sealing member 50 to the highest point of the Hall element 10. In the case of this example, the highest point of the Hall element 10 is the electrode portions 13a to 13d, so that the height p1 is formed lower than the bottom surface E of the self-sealing member 50 to the respective electrode portions 13a to 13d of the Hall element 10. Height h1.
自密封構件50之底面E至第1部位N1之第2面M2為止之高度p1、自密封構件50之底面E至第2部位N2之第2面M2為止之高度p2、及自 密封構件50之底面E至霍爾元件10之最高點為止之高度h1具有p1<h1<p2之關係。即,自密封構件50之底面E至霍爾元件之電極部與複數個導線接觸之接觸點為止之高度h1低於以密封構件50之底面E為基準面之第1部位N1之第2面側之高度p1。 The height p1 from the bottom surface E of the sealing member 50 to the second surface M2 of the first portion N1, the height p2 from the bottom surface E of the sealing member 50 to the second surface M2 of the second portion N2, and The height h1 from the bottom surface E of the sealing member 50 to the highest point of the Hall element 10 has a relationship of p1 < h1 < p2. In other words, the height h1 from the bottom surface E of the sealing member 50 to the contact point where the electrode portion of the Hall element contacts the plurality of wires is lower than the second surface side of the first portion N1 with the bottom surface E of the sealing member 50 as the reference surface. The height p1.
霍爾元件10較薄,於自密封構件50之底面E至霍爾元件10之最高點為止之高度構成為低於自底面E至引線端子21a至21d之最高點為止之高度之情形時,吸具之前端特別容易與引線端子21a至21d接觸,故而於此種構成之情形時階差D特別有效。 The Hall element 10 is thin, and the height from the bottom surface E of the self-sealing member 50 to the highest point of the Hall element 10 is lower than the height from the bottom surface E to the highest point of the lead terminals 21a to 21d. Since the front end is particularly easy to come into contact with the lead terminals 21a to 21d, the step D is particularly effective in the case of such a configuration.
又,自密封構件50之底面E至各電極部13a至13d與各導線31a至31d之第1連接點a為止之高度h1構成為低於自密封構件50之底面E至各引線端子21a至21d與各導線31a至31d之第2連接點b為止之高度h2。 Further, the height h1 from the bottom surface E of the sealing member 50 to each of the electrode portions 13a to 13d and the first connection point a of each of the wires 31a to 31d is configured to be lower than the bottom surface E of the self-sealing member 50 to each of the lead terminals 21a to 21d. The height h2 from the second connection point b of each of the wires 31a to 31d.
即,自密封構件50之底面E至第1連接點a為止之高度h1、與自密封構件50之底面E至第2連接點b為止之高度h2具有h1<h2之關係。 In other words, the height h1 from the bottom surface E of the sealing member 50 to the first connection point a and the height h2 from the bottom surface E of the sealing member 50 to the second connection point b have a relationship of h1 < h2.
本實施形態1之霍爾感測器具有h1<h2之關係,故而導線31a至31d不易與霍爾元件之基板11之邊緣接觸,從而不易產生洩漏電流。藉此,可實現薄型且可正確地檢測出磁性之霍爾感測器。 Since the Hall sensor of the first embodiment has a relationship of h1 < h2, the wires 31a to 31d are less likely to come into contact with the edge of the substrate 11 of the Hall element, and leakage current is less likely to occur. Thereby, a Hall sensor that is thin and can accurately detect magnetic properties can be realized.
再者,本實施形態1之霍爾感測器成為易產生引線端子之邊緣與導線之接觸之構造,但關於引線端子之邊緣接觸,僅成為於相同電位之引線端子之2個部位連接有導線之狀態,故而並無特別之問題。 Further, the Hall sensor of the first embodiment has a structure in which the edge of the lead terminal is easily brought into contact with the lead wire, but the edge contact of the lead terminal is connected to only two portions of the lead terminal of the same potential. There is no particular problem with the status.
又,各引線端子21a至21d自密封構件50之側面S露出。即,由於引線端子21a至21d自密封構件50之側面S露出,故而除使用露出於引線端子21a至21d之底面之部分(底面電極)之外,可使用露出於側面之部分(側面電極)進行安裝。尤其可提高整體厚度中之側面電極之比例,故而安裝變得容易。又,引線端子與焊料之接觸較差而無法取得導通之情形變少,安裝可靠性較高。進而,焊料安裝後之外觀檢查之視認性提高,從而可容易地確認是否無問題地進行焊接。 Further, the lead terminals 21a to 21d are exposed from the side surface S of the sealing member 50. In other words, since the lead terminals 21a to 21d are exposed from the side surface S of the sealing member 50, the portion exposed to the bottom surface of the lead terminals 21a to 21d (the bottom surface electrode) can be used, and the portion exposed to the side surface (side surface electrode) can be used. installation. In particular, the ratio of the side electrodes in the overall thickness can be increased, so that the mounting becomes easy. Further, the contact between the lead terminal and the solder is inferior, and the conduction cannot be obtained, and the mounting reliability is high. Further, the visibility of the visual inspection after solder mounting is improved, and it is possible to easily confirm whether or not welding is performed without any problem.
又,複數個導線31a至31d以使複數個電極部13a至13d為第1次接合、且複數個引線端子21a至21d之第2部位N2之第2面M2成為第2次接合之方式而打線接合。 Further, the plurality of wires 31a to 31d are wired so that the plurality of electrode portions 13a to 13d are joined for the first time, and the second surface M2 of the second portion N2 of the plurality of lead terminals 21a to 21d is joined for the second time. Engage.
如此,自較低側向較高側進行打線接合,故而金屬線難以與霍爾元件之邊緣接觸。藉此,即便縮短霍爾元件與引線端子之間之距離亦難以引起邊緣接觸。藉此,可縮短霍爾元件與引線端子之間之距離,從而可實現小型化。 Thus, the wire bonding is performed from the lower side to the upper side, so that the metal wire is difficult to contact the edge of the Hall element. Thereby, even if the distance between the Hall element and the lead terminal is shortened, it is difficult to cause edge contact. Thereby, the distance between the Hall element and the lead terminal can be shortened, and miniaturization can be achieved.
或者,複數個導線31a至31d以使複數個引線端子21a至21d之第2部位N2之第2面M2為第1次接合、且複數個電極部13a至13d成為第2次接合之方式而打線接合。 Alternatively, the plurality of wires 31a to 31d are wired so that the second surface M2 of the second portion N2 of the plurality of lead terminals 21a to 21d is joined for the first time and the plurality of electrode portions 13a to 13d are joined for the second time. Engage.
如此,自較高側向較低側進行打線接合,故而可降低打線接合之頂點,從而可實現薄型化。 In this way, the wire bonding is performed from the higher side to the lower side, so that the apex of the wire bonding can be reduced, and the thickness can be reduced.
又,複數個導線31a至31d亦可以使複數個電極部13a至13d為第1次接合、且複數個引線端子21a至21d之第1部位N1之第2面M2成為第2次接合之方式而打線接合。 Further, the plurality of wires 31a to 31d may have the plurality of electrode portions 13a to 13d being joined for the first time, and the second surface M2 of the first portion N1 of the plurality of lead terminals 21a to 21d may be joined for the second time. Wire bonding.
又,複數個導線31a至31d亦可以使複數個引線端子21a至21d之第1部位N1之第2面M2為第1次接合、且複數個電極部13a至13d成為第2次接合之方式而打線接合。 Further, the plurality of wires 31a to 31d may be such that the second surface M2 of the first portion N1 of the plurality of lead terminals 21a to 21d is joined for the first time, and the plurality of electrode portions 13a to 13d are joined for the second time. Wire bonding.
又,進而具備絕緣層40,其設置於基板11之與設置有複數個電極部13a至13d之面相反側之面。該絕緣層40自密封構件50之底面E露出。 Further, an insulating layer 40 is further provided on the surface of the substrate 11 opposite to the surface on which the plurality of electrode portions 13a to 13d are provided. The insulating layer 40 is exposed from the bottom surface E of the sealing member 50.
於本實施形態1中,作為絕緣層40,可列舉絕緣樹脂層、絕緣片等。作為絕緣層40,只要為較霍爾元件之電阻高之電阻即可。例如較佳為,絕緣層40之體積電阻率為108~1020(Ω.cm)。更佳為,絕緣層40之體積電阻率為1010~1018(Ω.cm)。於絕緣層40為數mm見方且厚度為數μm之情形時,絕緣層40之電阻成為1010~1018(Ω),霍爾元件之電阻 通常約為109Ω以下,故而具有充分之絕緣性。 In the first embodiment, examples of the insulating layer 40 include an insulating resin layer and an insulating sheet. The insulating layer 40 may be a resistor having a higher resistance than the Hall element. For example, it is preferable that the insulating layer 40 has a volume resistivity of 10 8 to 10 20 (Ω·cm). More preferably, the volume resistivity of the insulating layer 40 is 10 10 to 10 18 (Ω·cm). When the insulating layer 40 is several mm square and the thickness is several μm, the electric resistance of the insulating layer 40 is 10 10 to 10 18 (Ω), and the resistance of the Hall element is usually about 10 9 Ω or less, so that it has sufficient insulation.
絕緣層40中,更佳為包含例如環氧系之熱硬化型樹脂作為其成分、及包含氧化矽(SiO2)作為填料。絕緣層40與霍爾元件10之背面、即具有磁感應部12之面之相反側之面相接,藉由該絕緣層40而覆蓋霍爾元件10之背面。霍爾元件10之背面整體由絕緣層40覆蓋,其自抑制洩漏電流之產生之觀點而言較佳。絕緣層40中,覆蓋霍爾元件10之背面之部分之厚度由填料尺寸決定,例如為5μm以上。 In the insulating layer 40, it is more preferable to contain, for example, an epoxy-based thermosetting resin as a component thereof and cerium oxide (SiO 2 ) as a filler. The insulating layer 40 is in contact with the back surface of the Hall element 10, that is, the surface opposite to the surface having the magnetic induction portion 12, and the back surface of the Hall element 10 is covered by the insulating layer 40. The back surface of the Hall element 10 is entirely covered by the insulating layer 40, which is preferable from the viewpoint of suppressing generation of leakage current. In the insulating layer 40, the thickness of the portion covering the back surface of the Hall element 10 is determined by the size of the filler, and is, for example, 5 μm or more.
霍爾元件10具有例如半絕緣性之砷化鎵(GaAs)基板11、形成於該GaAs基板11上之包含半導體薄膜之磁感應部(活性層)12、及與磁感應部12電性連接之電極部13a至13d。磁感應部12例如於俯視時為十字(交叉)型,於交叉之4個前端部上分別設置有電極13a至13d。於俯視時相面對之一對電極13a、13c係用以使電流流過磁感應部12之輸入端子,與連結電極13a、13c之線於俯視時正交之方向上相對面之另一對電極13b、13d係用以自磁感應部12輸出電壓之輸出端子。為使霍爾元件10之厚度減薄,研磨基板11之與設置有磁感應部(活性層)12之面相反側之面即可。霍爾元件10之尺寸例如長為0.1mm以上且0.4mm以下,寬為0.1mm以上且0.4mm以下,厚為0.05mm以上且0.20mm以下。 The Hall element 10 has, for example, a semi-insulating gallium arsenide (GaAs) substrate 11, a magnetic induction portion (active layer) 12 including a semiconductor thin film formed on the GaAs substrate 11, and an electrode portion electrically connected to the magnetic induction portion 12. 13a to 13d. The magnetic induction portion 12 is, for example, a cross (intersection) type in plan view, and electrodes 13a to 13d are provided on the four distal end portions of the intersection. The pair of electrodes 13a and 13c facing the plan view phase are configured to cause a current to flow through the input terminal of the magnetic induction portion 12, and the other pair of electrodes facing the opposite sides of the line connecting the electrodes 13a and 13c in a plan view. 13b and 13d are output terminals for outputting a voltage from the magnetic induction unit 12. In order to reduce the thickness of the Hall element 10, the surface of the substrate 11 opposite to the surface on which the magnetic induction portion (active layer) 12 is provided may be polished. The size of the Hall element 10 is, for example, 0.1 mm or more and 0.4 mm or less in length, 0.1 mm or more and 0.4 mm or less in width, and 0.05 mm or more and 0.20 mm or less in thickness.
霍爾感測器100為無島構造,具有用以取得與外部之電性連接之複數個引線端子21a至21d。如圖2(b)所示,引線端子21a至21d配置於霍爾元件10之周圍、例如霍爾感測器100之四角附近。例如,將引線端子21a與引線端子21c以隔著霍爾元件10而對向之方式配置。又,將引線端子21b與引線端子21d以隔著霍爾元件10而對向之方式配置。進而,以使連結引線端子21a與引線端子21c之直線(假想線)、與連結引線端子21b與引線端子21d之直線(假想線)於俯視時交叉之方式分別配置引線端子21至21d。 The Hall sensor 100 has an islandless structure and has a plurality of lead terminals 21a to 21d for obtaining electrical connection with the outside. As shown in FIG. 2(b), the lead terminals 21a to 21d are disposed around the Hall element 10, for example, near the four corners of the Hall sensor 100. For example, the lead terminal 21a and the lead terminal 21c are disposed to face each other with the Hall element 10 interposed therebetween. Moreover, the lead terminal 21b and the lead terminal 21d are arranged to face each other with the Hall element 10 interposed therebetween. Further, the lead terminals 21 to 21d are disposed so as to intersect the straight line (the imaginary line) connecting the lead terminal 21a and the lead terminal 21c and the straight line (the imaginary line) connecting the lead terminal 21b and the lead terminal 21d in a plan view.
即,複數個引線端子包含第1至第4引線端子,第1至第4引線端子係以使連結第1引線端子與第3引線端子之假想直線、與連結第2引線端子與第4引線端子之假想直線於俯視時交叉之方式而配置。 In other words, the plurality of lead terminals include the first to fourth lead terminals, and the first to fourth lead terminals are such that a virtual straight line connecting the first lead terminal and the third lead terminal and the second lead terminal and the fourth lead terminal are connected The imaginary straight lines are arranged so as to intersect each other in a plan view.
引線端子21a至21d例如包含銅(Cu)等金屬。又,亦可對引線端子21a至21d之面側或背面之一部分進行蝕刻(即半蝕刻)。 The lead terminals 21a to 21d include, for example, a metal such as copper (Cu). Further, one of the surface side or the back surface of the lead terminals 21a to 21d may be etched (i.e., half-etched).
再者,雖未圖示,但於引線端子21a至21d之表面(圖2(a)之上面側),對由導線31a至31d連接之引線端子21a至21d之表面實施鍍Ag,其自電性連接之觀點而言較佳。 Further, although not shown, on the surfaces of the lead terminals 21a to 21d (on the upper side of FIG. 2(a)), the surfaces of the lead terminals 21a to 21d connected by the wires 31a to 31d are plated with Ag, and the self-electricity thereof is applied. It is preferred from the viewpoint of sexual connection.
又,於引線端子21a至21d之表面及背面,亦可代替外裝鍍敷層60而實施鍍鎳(Ni)-鈀(Pd)-金(Au)等。雖為霍爾感測器,但因無島而不易受到磁性體即鍍Ni膜之影響,故而可實施。 Further, nickel (Ni)-palladium (Pd)-gold (Au) or the like may be applied to the surface and the back surface of the lead terminals 21a to 21d instead of the exterior plating layer 60. Although it is a Hall sensor, it can be implemented because it is not susceptible to a magnetic film, that is, a Ni plating film, because it has no island.
導線31a至31d係將霍爾元件10具有之電極部13a至13d、與引線端子21a至21d分別電性連接之導線,其包含例如金(Au)。如圖2(b)所示,導線31a將引線端子21a與電極部13a加以連接,導線31b將引線端子21b與電極部13b加以連接。又,導線31c將引線端子21c與電極部13c加以連接,導線31d將引線端子21d與電極13d加以連接。 The wires 31a to 31d are wires for electrically connecting the electrode portions 13a to 13d of the Hall element 10 and the lead terminals 21a to 21d, respectively, and include, for example, gold (Au). As shown in Fig. 2(b), the lead wire 31a connects the lead terminal 21a and the electrode portion 13a, and the lead wire 31b connects the lead terminal 21b and the electrode portion 13b. Further, the lead wire 31c connects the lead terminal 21c and the electrode portion 13c, and the lead wire 31d connects the lead terminal 21d and the electrode 13d.
密封構件50利用樹脂密封而覆蓋並保護霍爾元件10、引線端子21a至21d之至少表面側即與導線連接之側之面、及導線31a至31d。密封構件50包含例如環氧系之熱硬化型樹脂,且能對抗回焊時之高熱。再者,密封構件50與絕緣層40即便於例如相同之環氧系之熱硬化型樹脂之情形時,其材料亦互不相同。例如,含有之成分不同,或即便含有之成分相同,但含有比不同。 The sealing member 50 covers and protects at least the front surface side of the Hall element 10, the lead terminals 21a to 21d, that is, the side connected to the wire, and the wires 31a to 31d by resin sealing. The sealing member 50 contains, for example, an epoxy-based thermosetting resin and is resistant to high heat during reflow. Further, even when the sealing member 50 and the insulating layer 40 are, for example, the same epoxy-based thermosetting resin, the materials are different from each other. For example, the components contained are different, or even if the components are the same, the content ratio is different.
又,如圖2(c)所示,於霍爾感測器100之底面側即安裝於配線基板之側,各引線端子21a至21d之背面之至少一部分、與絕緣層40之至少一部分分別自密封構件50露出。 Further, as shown in FIG. 2(c), at the bottom side of the Hall sensor 100, that is, on the side of the wiring board, at least a part of the back surface of each of the lead terminals 21a to 21d and at least a part of the insulating layer 40 are respectively The sealing member 50 is exposed.
又,外裝鍍敷層60形成於自密封構件50露出之引線端子21a至21d 之背面。外裝鍍敷層60包含例如錫(Sn)等。 Further, the exterior plating layer 60 is formed on the lead terminals 21a to 21d exposed from the sealing member 50. The back. The exterior plating layer 60 contains, for example, tin (Sn) or the like.
根據此種構成,於使用霍爾感測器100檢測磁性(磁場)之情形時,例如將引線端子21a連接於電源電位(+),並且將引線端子21c連接於接地電位(GND),使電流自引線端子21a流向引線端子21c。繼而,測定引線端子21b、21d間之電位差V1-V2(霍爾輸出電壓VH)。根據霍爾輸出電壓VH之大小而檢測磁場之大小,且根據霍爾輸出電壓VH之正負而檢測磁場之方向。 According to this configuration, when the magnetic sensor (magnetic field) is detected using the Hall sensor 100, for example, the lead terminal 21a is connected to the power supply potential (+), and the lead terminal 21c is connected to the ground potential (GND) to cause current. The lead terminal 21a flows to the lead terminal 21c. Then, the potential difference V1-V2 between the lead terminals 21b and 21d (the Hall output voltage VH) is measured. The magnitude of the magnetic field is detected according to the magnitude of the Hall output voltage VH, and the direction of the magnetic field is detected based on the positive and negative of the Hall output voltage VH.
即,引線端子21a係對霍爾元件10供給特定電壓之電源用引線端子。引線端子21c係對霍爾元件10供給接地電位之接地用引線端子。引線端子21b、21d係取出霍爾元件10之霍爾電動勢信號之信號取出用引線端子。 In other words, the lead terminal 21a is a power supply lead terminal that supplies a specific voltage to the Hall element 10. The lead terminal 21c is a ground lead terminal that supplies a ground potential to the Hall element 10. The lead terminals 21b and 21d are signal extraction lead terminals for taking out the Hall electromotive force signal of the Hall element 10.
圖4(a)及(b)係具體之霍爾元件之構成圖,圖4(a)表示剖視圖,圖4(b)表示俯視圖。但導線並未圖示。圖中,符號Ga表示表面實施半蝕刻後之部分,Gb表示背面實施半蝕刻後之部分。再者,圖2(a)之剖視圖表示圖2(b)之A-A線剖視圖,圖4(a)之剖視圖表示圖4(b)之B-B線剖視圖。 4(a) and 4(b) are views showing a configuration of a specific Hall element, Fig. 4(a) is a cross-sectional view, and Fig. 4(b) is a plan view. However, the wires are not shown. In the figure, the symbol Ga indicates a portion where the surface is half-etched, and Gb indicates a portion after the half etching is performed on the back surface. 2(a) is a cross-sectional view taken along line A-A of FIG. 2(b), and FIG. 4(a) is a cross-sectional view taken along line B-B of FIG. 4(b).
圖4(a)及(b)所示之霍爾感測器中,使用有以與吸具之接觸儘可能少之方式設計之引線端子,對引線端子之表面進行半蝕刻。即,對吸具干涉之區域進行半蝕刻。 In the Hall sensor shown in FIGS. 4(a) and 4(b), a lead terminal designed to have as little contact as the contact with the suction tool is used, and the surface of the lead terminal is half-etched. That is, the region where the suction device interferes is half-etched.
圖4(b)所示之霍爾感測器之霍爾元件相對於圖2(b)所示之霍爾感測器之霍爾元件旋轉45度而配置。即,圖4(b)所示之霍爾感測器之霍爾元件於俯視時為矩形狀,且將霍爾元件配置成使該矩形之4個頂點於俯視時分別配置於引線端子21a與引線端子21b之間之區域、引線端子21b與引線端子21c之間之區域、引線端子21c與引線端子21d之間之區域、及引線端子21d與引線端子21a之間之區域。 The Hall element of the Hall sensor shown in FIG. 4(b) is arranged to be rotated by 45 degrees with respect to the Hall element of the Hall sensor shown in FIG. 2(b). That is, the Hall element of the Hall sensor shown in FIG. 4(b) has a rectangular shape in plan view, and the Hall element is disposed such that the four vertices of the rectangle are respectively disposed on the lead terminal 21a in plan view. A region between the lead terminals 21b, a region between the lead terminal 21b and the lead terminal 21c, a region between the lead terminal 21c and the lead terminal 21d, and a region between the lead terminal 21d and the lead terminal 21a.
藉由將霍爾元件配置於此種方向而可使霍爾感測器整體小型 化。然而,若如此配置霍爾元件,則於霍爾元件載置時吸具易與引線端子接觸,故而於如此配置霍爾元件之情形時,於引線端子21a至21d之第2面M2設置階差D對於防止吸具接觸特別有效。再者,上述矩形中包含正方形。 By arranging the Hall element in this direction, the Hall sensor can be made small overall. Chemical. However, if the Hall element is disposed in this way, the chuck is easily brought into contact with the lead terminal when the Hall element is placed. Therefore, when the Hall element is thus disposed, a step is set on the second surface M2 of the lead terminals 21a to 21d. D is particularly effective for preventing suction contact. Furthermore, the above rectangle includes a square.
於本實施形態1中,以於霍爾元件10與密封構件50之底面E之間不存在用以載置霍爾元件10之金屬製之島之無島構造為中心進行了說明,但亦可於霍爾元件10與密封構件50之底面E之間設置島。又,該島亦可與接地用引線端子21c電性連接。然而,自薄型化之觀點而言,較佳為於霍爾元件10與密封構件50之底面E之間不設置島。 In the first embodiment, the island-free structure in which the metal element island on which the Hall element 10 is placed is not present between the Hall element 10 and the bottom surface E of the sealing member 50 is mainly described. An island is provided between the Hall element 10 and the bottom surface E of the sealing member 50. Further, the island may be electrically connected to the ground lead terminal 21c. However, from the viewpoint of thinning, it is preferable that no island is provided between the Hall element 10 and the bottom surface E of the sealing member 50.
又,於本實施形態1中,以於複數個引線端子21a至21d上全部具有階差D之情形為例進行了說明,但引線端子21a至21d無需全部具有階差D,引線端子21a至21d中之至少一引線端子具有階差D即可。 Further, in the first embodiment, the case where all of the plurality of lead terminals 21a to 21d have the step D has been described as an example, but the lead terminals 21a to 21d need not all have the step D, and the lead terminals 21a to 21d At least one of the lead terminals has a step D.
又,於本實施形態1中,以自密封構件50之底面E至第1部位N1之第2面M2為止之高度p1、自密封構件50之底面E至第2部位N2之第2面M2為止之高度p2、及自密封構件50之底面E至霍爾元件10之最高點為止之高度h1之關係具有p1<h1<p2之關係之情形為中心進行了說明,但亦可p2<h1。即便為p2<h1,階差D對於防止吸具之接觸亦為有效。例如,於p2<h1<1.5×p2之情形、或p2<h1<1.3×p2之情形、p2<h1<1.1×p2之情形等p2與h1為並未過度變化之高度之情形時,階差D對於防止吸具之接觸特別有效。p2例如為0.05mm以上且0.20mm以下,h1例如為0.05mm以上且0.20mm以下,p1例如為0.02mm以上且0.15mm以下。 Further, in the first embodiment, the height p1 from the bottom surface E of the sealing member 50 to the second surface M2 of the first portion N1 is from the bottom surface E of the sealing member 50 to the second surface M2 of the second portion N2. The height p2 and the relationship between the height h1 from the bottom surface E of the sealing member 50 to the highest point of the Hall element 10 have a relationship of p1 < h1 < p2 as a center, but may be p2 < h1. Even if p2 < h1, the step D is effective for preventing contact of the suction tool. For example, in the case of p2<h1<1.5×p2, or the case of p2<h1<1.3×p2, p2<h1<1.1×p2, etc., when p2 and h1 are heights that are not excessively changed, the step difference D is particularly effective for preventing contact with the suction device. P2 is, for example, 0.05 mm or more and 0.20 mm or less, and h1 is, for example, 0.05 mm or more and 0.20 mm or less, and p1 is, for example, 0.02 mm or more and 0.15 mm or less.
又,於本實施形態1中,以自密封構件50之底面E至第1連接點a為止之高度h1於各電極部13a至13d中全部相等之情形為例進行了說明,但自密封構件50之底面E至第1連接點a為止之高度h1於電極部13a至13d中亦可不同。又,同樣地,自密封構件50之底面E至第2連接點b 為止之高度h2於各引線端子21a至21d中亦可不同。在將與1根共通之導線連接之電極部與引線端子設為一個單元之情形時,至少於一個單元滿足高度h1<h2即可。但較佳為於所有單元滿足高度h1<h2。 In the first embodiment, the height h1 from the bottom surface E of the sealing member 50 to the first connection point a is equal to each of the electrode portions 13a to 13d. However, the self-sealing member 50 is described as an example. The height h1 from the bottom surface E to the first connection point a may be different in the electrode portions 13a to 13d. Also, similarly, from the bottom surface E of the self-sealing member 50 to the second connection point b The height h2 so far may be different among the lead terminals 21a to 21d. In the case where the electrode portion and the lead terminal connected to one common wire are one unit, at least one unit satisfies the height h1 < h2. However, it is preferable that the height h1 < h2 is satisfied in all the cells.
圖5係用以說明本發明之霍爾感測器之剖面構成圖。由於為下述霍爾感測器之製造方法之霍爾元件配置步驟,故而記載有基材30,但該基材30於使引線端子21a至21d之第1面M1露出之露出步驟時被去除。 Figure 5 is a cross-sectional view showing the structure of the Hall sensor of the present invention. Since the base material 30 is described as a Hall element disposing step of the manufacturing method of the Hall sensor described below, the base material 30 is removed at the exposure step of exposing the first surface M1 of the lead terminals 21a to 21d. .
霍爾元件10係以密封構件50之底面為基準面M而配置於使霍爾元件10之最高點T較引線端子之第1部位N1之第2面M2高、且較第2部位N2之第2面M2低的位置。即,自密封構件50之底面E至霍爾元件10之最高點T為止之高度t、自密封構件50之底面E至第1部位N1之第2面M2為止之高度p1、及自密封構件50之底面E至第2部位N2之第2面M2為止之高度p2具有p1<t<p2之關係。 The Hall element 10 is disposed such that the highest point T of the Hall element 10 is higher than the second surface M2 of the first portion N1 of the lead terminal and is higher than the second portion N2 with the bottom surface of the sealing member 50 as the reference surface M. 2 positions with low M2. That is, the height t from the bottom surface E of the sealing member 50 to the highest point T of the Hall element 10, the height p1 from the bottom surface E of the sealing member 50 to the second surface M2 of the first portion N1, and the self-sealing member 50 The height p2 from the bottom surface E to the second surface M2 of the second portion N2 has a relationship of p1 < t < p2.
又,複數個引線端子21a至21d包含第1至第4引線端子,第1至第4引線端子配置成使連結第1引線端子與第3引線端子之假想直線、與連結第2引線端子與第4引線端子之假想直線於俯視時交叉。霍爾元件10於俯視時為矩形狀,且該霍爾元件10配置於在俯視時使霍爾元件10之4個頂點配置於第1引線端子與第2引線端子之間之區域、第2引線端子與第3引線端子之間之區域、第3引線端子與第4引線端子之間之區域、及第4引線端子與第1引線端子之間之區域的位置。 Further, the plurality of lead terminals 21a to 21d include first to fourth lead terminals, and the first to fourth lead terminals are arranged such that a virtual straight line connecting the first lead terminal and the third lead terminal and the second lead terminal and the second lead terminal are connected The imaginary straight line of the 4-lead terminal crosses in a plan view. The Hall element 10 has a rectangular shape in a plan view, and the Hall element 10 is disposed in a region where the four apexes of the Hall element 10 are disposed between the first lead terminal and the second lead terminal in plan view, and the second lead a region between the terminal and the third lead terminal, a region between the third lead terminal and the fourth lead terminal, and a position of a region between the fourth lead terminal and the first lead terminal.
又,具備絕緣層40,其配置於霍爾元件10之與配置有複數個電極部13a至13d之面相反側之面,且該絕緣層40自密封構件50之底面E露出。 Further, the insulating layer 40 is disposed on a surface of the Hall element 10 opposite to the surface on which the plurality of electrode portions 13a to 13d are disposed, and the insulating layer 40 is exposed from the bottom surface E of the sealing member 50.
又,各引線端子於第2面M2上具有階差D,以階差D為邊界,各引線端子於靠近霍爾元件10之側具有第1部位N1,於遠離霍爾元件10之側具有第2部位N2,以密封構件50之底面E為基準面M,將至各引 線端子之第1部位N1之第2面M2為止之高度p1形成為低於至第2部位N2之第2面M2為止之高度p2。即,自密封構件50之底面E至第1部位N1之第2面M2為止之高度p1、與自密封構件50之底面E至第2部位N2之第2面M2為止之高度p2具有p1<p2之關係。 Further, each of the lead terminals has a step D on the second surface M2, and each of the lead terminals has a first portion N1 on the side close to the Hall element 10 and a side away from the Hall element 10 on the side of the step D. At the second portion N2, the bottom surface E of the sealing member 50 is used as the reference surface M, and The height p1 from the second surface M2 of the first portion N1 of the wire terminal is formed to be lower than the height p2 to the second surface M2 of the second portion N2. In other words, the height p1 from the bottom surface E of the sealing member 50 to the second surface M2 of the first portion N1 and the height p2 from the bottom surface E of the sealing member 50 to the second surface M2 of the second portion N2 have p1 < p2. Relationship.
霍爾感測器100之尺寸例如長為0.2mm以上且0.6mm以下,寬為0.4mm以上且1.2mm以下,厚為0.1mm以上且0.3mm以下。 The Hall sensor 100 has a size of, for example, 0.2 mm or more and 0.6 mm or less, a width of 0.4 mm or more and 1.2 mm or less, and a thickness of 0.1 mm or more and 0.3 mm or less.
(製造方法) (Production method)
圖6(a)及(b)係表示用於本實施形態1之霍爾感測器之製造之金屬板之圖。圖6(a)為前視圖,圖6(b)為後視圖。金屬板120成為各霍爾感測器之成為引線端子之部分相連之構造。圖中符號H表示孔部,影線部分表示半蝕刻區域。由虛線包圍之區域為1個霍爾感測器中使用之區域,又,虛線與虛線之間之區域為切割時切割之齒通過之區域B(切口寬度)。 6(a) and 6(b) are views showing a metal plate used in the manufacture of the Hall sensor of the first embodiment. Fig. 6(a) is a front view, and Fig. 6(b) is a rear view. The metal plate 120 has a structure in which the portions of the Hall sensors that are connected to the lead terminals are connected. In the figure, the symbol H indicates a hole portion, and the hatched portion indicates a half-etched region. The area surrounded by the dotted line is the area used in one Hall sensor, and the area between the dotted line and the broken line is the area B (the slit width) through which the cut teeth pass during cutting.
本實施形態1之霍爾感測器之製造方法中,該霍爾感測器具備複數個引線端子21a至21d、具有複數個電極部13a至13d之霍爾元件10、及分別電性連接複數個引線端子21a至21d之各引線端子與複數個電極部13a至13d之各電極部之複數個導線31a至31d,該霍爾感測器之製造方法包含:引線端子配置步驟,將形成有複數個引線端子21a至21d之金屬板120配置於基材上;霍爾元件配置步驟,將霍爾元件10配置於由複數個引線端子21a至21d包圍之區域;連接步驟,利用複數個導線31a至31d將複數個電極部13a至13d與複數個引線端子電性連接;密封步驟,利用密封構件將霍爾元件10、複數個導線31a至31d、及各引線端子之與導線連接之面即第2面M2進行密封;及露出步驟,去除基材,使各引線端子之與第2面M2相反側之第1面M1自密封構件50露出。 In the method of manufacturing a Hall sensor according to the first embodiment, the Hall sensor includes a plurality of lead terminals 21a to 21d, a Hall element 10 having a plurality of electrode portions 13a to 13d, and an electrical connection plural Each of the lead terminals of the lead terminals 21a to 21d and the plurality of wires 31a to 31d of the electrode portions of the plurality of electrode portions 13a to 13d, the method of manufacturing the Hall sensor includes: a lead terminal disposing step, which will form a plurality of The metal plates 120 of the lead terminals 21a to 21d are disposed on the substrate; the Hall element disposing step places the Hall element 10 in a region surrounded by the plurality of lead terminals 21a to 21d; and the connecting step uses a plurality of wires 31a to 31d. The plurality of electrode portions 13a to 13d are electrically connected to the plurality of lead terminals. In the sealing step, the Hall element 10, the plurality of wires 31a to 31d, and the surface of each of the lead terminals connected to the wires are the second member by the sealing member. The surface M2 is sealed; and the exposing step removes the substrate, and the first surface M1 of the lead terminal opposite to the second surface M2 is exposed from the sealing member 50.
又,複數個引線端子至少包含第1引線端子,第1引線端子於2面 M2上,且於俯視時,於以載置霍爾元件10之位置為中心之橢圓形狀或多邊形狀之區域之周邊上具有階差D,以階差D為邊界,第1引線端子於靠近載置霍爾元件10之位置之側具有第1部位N1,於遠離載置霍爾元件10之位置之側具有第2部位N2,第1引線端子於將金屬板配置於基材上時,以基材之配置有金屬板120之面為基準面M,使至第1部位N1之第2面M2為止之高度p1低於至第2部位N2之第2面M2為止之高度p2。即,至第1部位N1之第2面M2為止之高度p1、與至第2部位N2之第2面M2為止之高度p2具有p1<p2之關係。 Further, the plurality of lead terminals include at least the first lead terminal, and the first lead terminal is on the two sides On the M2, in the plan view, there is a step D on the periphery of the elliptical or polygonal region centering on the position at which the Hall element 10 is placed, with the step D as the boundary, and the first lead terminal is close to the load. The first portion N1 is provided on the side where the Hall element 10 is placed, and the second portion N2 is provided on the side away from the position on which the Hall element 10 is placed. When the first lead terminal is placed on the substrate, the base is formed. The surface of the metal plate 120 is placed on the reference surface M, and the height p1 to the second surface M2 of the first portion N1 is lower than the height p2 to the second surface M2 of the second portion N2. In other words, the height p1 up to the second surface M2 of the first portion N1 and the height p2 to the second surface M2 of the second portion N2 have a relationship of p1 < p2.
又,第1引線端子於俯視時,於以載置霍爾元件10之位置為中心之橢圓形狀之區域之周邊上具有階差D。又,引線端子於俯視時,以載置霍爾元件10之位置為中心之圓周上具有階差D。 Further, the first lead terminal has a step D around the elliptical shape centering on the position at which the Hall element 10 is placed in plan view. Further, the lead terminal has a step D on the circumference centered on the position at which the Hall element 10 is placed in plan view.
第1引線端子於第2面M2上,且於俯視時,於與以載置霍爾元件10之位置為中心之吸具之前端之形狀對應之位置具有階差D,以階差D為邊界,引線端子於靠近載置霍爾元件10之位置之側具有第1部位N1,於遠離載置霍爾元件10之位置之側具有第2部位N2,以基材30之配置有金屬板120之面為基準面M,將至引線端子之第1部位N1之第2面M2為止之高度p1形成為低於至第2部位N2之第2面M2為止之高度p2。 The first lead terminal is on the second surface M2 and has a step D at a position corresponding to the shape of the front end of the suction device centered on the position at which the Hall element 10 is placed in a plan view, with the step D as a boundary. The lead terminal has a first portion N1 on a side closer to the position on which the Hall element 10 is placed, a second portion N2 on a side away from the position on which the Hall element 10 is placed, and a metal plate 120 disposed on the substrate 30. The surface is the reference surface M, and the height p1 from the second surface M2 of the first portion N1 of the lead terminal is formed to be lower than the height p2 to the second surface M2 of the second portion N2.
又,霍爾元件配置步驟包含以下步驟,即,以基材30之配置有金屬板120之面為基準面M,將霍爾元件10配置於使該霍爾元件10之最高點T較引線端子21a至21d之第1部位N1之第2面M2高、且較第2部位N2之第2面M2低的位置。 Further, the Hall element arranging step includes the step of arranging the Hall element 10 such that the highest point T of the Hall element 10 is higher than the lead terminal, with the surface of the substrate 30 on which the metal plate 120 is disposed as the reference surface M. The second surface M2 of the first portion N1 of 21a to 21d is higher than the second surface M2 of the second portion N2.
再者,霍爾元件配置步驟亦可包含以下步驟,即,將霍爾元件10配置於使霍爾元件10之最高點T較第2部位N2之第2面M2高的位置。即便為p2<T,階差D對於防止吸具之接觸亦為有效。例如,於p2<T<1.5×p2之情形、或p2<T<1.3×p2之情形、p2<T<1.1×p2之 情形等p2與T為並未過度變化之高度之情形時,階差D對於防止吸具之接觸特別有效。 Further, the Hall element arranging step may include a step of arranging the Hall element 10 at a position where the highest point T of the Hall element 10 is higher than the second surface M2 of the second portion N2. Even if p2 < T, the step D is effective for preventing contact of the suction tool. For example, in the case of p2<T<1.5×p2, or the case of p2<T<1.3×p2, p2<T<1.1×p2 When the situation, such as p2 and T, is a case where the height is not excessively changed, the step D is particularly effective for preventing contact of the suction tool.
又,複數個引線端子21a至21d包含第1至第4引線端子,第1至第4引線端子配置成使連結第1引線端子與第3引線端子之假想直線、與連結第2引線端子與第4引線端子之假想直線於俯視時交叉,霍爾元件10於俯視時為矩形狀,霍爾元件配置步驟包含以下步驟,即,將霍爾元件10配置成於俯視時使霍爾元件10之4個頂點配置於第1引線端子與第2引線端子之間之區域、第2引線端子與第3引線端子之間之區域、第3引線端子與第4引線端子之間之區域、及第4引線端子與第1引線端子之間之區域。 Further, the plurality of lead terminals 21a to 21d include first to fourth lead terminals, and the first to fourth lead terminals are arranged such that a virtual straight line connecting the first lead terminal and the third lead terminal and the second lead terminal and the second lead terminal are connected The imaginary straight line of the four lead terminals intersects in plan view, and the Hall element 10 has a rectangular shape in plan view, and the Hall element arranging step includes the step of arranging the Hall element 10 so as to make the Hall element 10 4 in plan view. The apex is disposed in a region between the first lead terminal and the second lead terminal, a region between the second lead terminal and the third lead terminal, a region between the third lead terminal and the fourth lead terminal, and a fourth lead The area between the terminal and the first lead terminal.
又,包含於基材30與霍爾元件10之間形成絕緣層40之絕緣層形成步驟,且露出步驟包含使絕緣層40自密封構件50露出之步驟。 Further, an insulating layer forming step of forming the insulating layer 40 between the substrate 30 and the Hall element 10, and the exposing step includes a step of exposing the insulating layer 40 from the sealing member 50.
又,複數個引線端子之各引線端子於第2面上具有階差D,以階差D為邊界,各引線端子於靠載置霍爾元件10之位置之側具有第1部位N1,於遠離載置霍爾元件10之位置之側具有第2部位N2,各引線端子於將金屬板配置於基材上時,以基材30之配置有金屬板120之面為基準面M,將至各引線端子之第1部位N1之第2面M2為止之高度p1形成為低於至第2部位N2之第2面M2為止之高度p2。 Further, each of the plurality of lead terminals has a step D on the second surface, and the step D is a boundary, and each of the lead terminals has the first portion N1 on the side on which the Hall element 10 is placed, and is away from The second portion N2 is provided on the side where the Hall element 10 is placed, and when the metal plate is placed on the substrate, the surface of the substrate 30 on which the metal plate 120 is placed is used as the reference surface M, and each of the lead terminals is placed on the substrate M. The height p1 from the second surface M2 of the first portion N1 of the lead terminal is formed to be lower than the height p2 to the second surface M2 of the second portion N2.
圖7(a)至(e)係表示霍爾感測器之製造方法之步驟之俯視圖。再者,於圖7(a)至(e)中,虛線與虛線之間之區域為切割時切割之齒通過之區域B(切口寬度)。 7(a) to 7(e) are plan views showing the steps of a method of manufacturing a Hall sensor. Further, in Figs. 7(a) to (e), the area between the broken line and the broken line is the area B (the slit width) through which the cut teeth are cut at the time of cutting.
如圖7(a)所示,首先,準備形成有上述引線端子之金屬板120。該金屬板120具有於俯視時於縱方向及橫方向上將複數個圖2(b)所示之引線端子21a至21d相連之構造。金屬板120之材料例如為銅。 As shown in FIG. 7(a), first, a metal plate 120 on which the lead terminals are formed is prepared. The metal plate 120 has a structure in which a plurality of lead terminals 21a to 21d shown in FIG. 2(b) are connected in the vertical direction and the lateral direction in plan view. The material of the metal plate 120 is, for example, copper.
其次,如圖7(b)所示,於金屬板120之背面側,貼附例如耐熱性膜80之一面作為基材。於該耐熱性膜80之一面,塗佈有例如絕緣性之 黏著層。黏著層中,作為其成分,例如矽酮樹脂成為基底。藉由該黏著層而易將金屬板120貼附於耐熱性膜80。藉由將耐熱性膜80貼附於金屬板120之背面側而使金屬板120貫通之貫通區域成為由耐熱性膜80自背面側堵塞之狀態。 Next, as shown in FIG. 7(b), on the back side of the metal plate 120, for example, one surface of the heat-resistant film 80 is attached as a substrate. One surface of the heat resistant film 80 is coated with, for example, an insulating property. Adhesive layer. In the adhesive layer, as a component thereof, for example, an anthrone resin is used as a substrate. The metal plate 120 is easily attached to the heat resistant film 80 by the adhesive layer. By the heat-resistant film 80 being attached to the back surface side of the metal plate 120, the penetration region through which the metal plate 120 penetrates is in a state in which the heat-resistant film 80 is clogged from the back side.
再者,作為基材即耐熱性膜80,較佳為使用具有黏著性並且具有耐熱性之樹脂製之膠帶。 Further, as the heat-resistant film 80 which is a substrate, it is preferable to use a tape made of a resin having adhesiveness and heat resistance.
關於黏著性,較佳為較黏著層之糊膠厚度更薄。又,關於耐熱性,需要能對抗約150℃~200℃之溫度。作為此種耐熱性膜80,可使用例如聚醯亞胺膠帶。聚醯亞胺膠帶具有能對抗約280℃之耐熱性。此種具有較高之耐熱性之聚醯亞胺膠帶對於以後之鑄模或打線接合時施加這高熱亦可對抗。又,作為耐熱性膜80,除聚醯亞胺膠帶之外,亦可使用以下膠帶。 Regarding the adhesion, it is preferred that the thickness of the paste of the adhesive layer is thinner. Further, regarding heat resistance, it is required to be able to withstand a temperature of about 150 ° C to 200 ° C. As such a heat resistant film 80, for example, a polyimide tape can be used. The polyimide lens has a heat resistance against about 280 °C. Such a high heat-resistance polyimide tape can also be applied to the subsequent casting or wire bonding. Further, as the heat-resistant film 80, in addition to the polyimide film, the following tape may be used.
(1)聚酯膠帶,耐熱溫度約130℃(但根據使用條件,耐熱溫度達約200℃) (1) Polyester tape, heat resistant temperature is about 130 ° C (but the heat resistant temperature is about 200 ° C depending on the conditions of use)
(2)鐵氟龍(註冊商標)膠帶,耐熱溫度約180℃ (2) Teflon (registered trademark) tape, heat resistant temperature of about 180 ° C
(3)PPS(聚苯硫醚),耐熱溫度約160℃ (3) PPS (polyphenylene sulfide), heat resistant temperature of about 160 ° C
(4)玻璃布,耐熱溫度約200℃ (4) Glass cloth, heat resistant temperature is about 200 ° C
(5)諾美紙,耐熱溫度約150~200℃ (5) Nome paper, heat resistant temperature is about 150~200°C
(6)此外,可利用芳族聚醯胺、縐紋紙作為耐熱性膜80。 (6) Further, an aromatic polyamide or crepe paper can be used as the heat-resistant film 80.
其次,對耐熱性膜80之具有黏著層之面中之由引線端子21a至21d包圍之區域塗佈絕緣漿料。此處,於完成後之霍爾感測器100中,以不使霍爾元件10之背面之一部分自鑄模樹脂等密封構件50露出之方式調整絕緣漿料之塗佈條件(例如,塗佈之範圍或塗佈之厚度等)。 Next, an insulating paste is applied to a region of the heat-resistant film 80 having the adhesive layer surrounded by the lead terminals 21a to 21d. Here, in the Hall sensor 100 after completion, the coating conditions of the insulating paste are adjusted so that one part of the back surface of the Hall element 10 is not exposed from the sealing member 50 such as a mold resin (for example, coating Range or thickness of coating, etc.).
其次,如圖7(c)所示,將霍爾元件10載置於耐熱性膜80中之塗佈有絕緣漿料之區域(即進行黏晶)。繼而,於接合後進行熱處理(即固化),使絕緣漿料硬化而作為絕緣層40。 Next, as shown in FIG. 7(c), the Hall element 10 is placed on the region of the heat-resistant film 80 coated with the insulating paste (that is, the die-bonding is performed). Then, heat treatment (that is, curing) is performed after bonding, and the insulating paste is cured to serve as the insulating layer 40.
其次,如圖7(d)所示,將導線31a至31d之一端分別連接於各引線端子21a至21d,將導線31a至31d之另一端分別連接於電極部13a至13d(即進行打線接合)。圖7(e)係圖7(d)之後視圖。 Next, as shown in Fig. 7(d), one ends of the wires 31a to 31d are respectively connected to the respective lead terminals 21a to 21d, and the other ends of the wires 31a to 31d are respectively connected to the electrode portions 13a to 13d (i.e., wire bonding is performed). . Fig. 7(e) is a rear view of Fig. 7(d).
繼而,利用鑄模樹脂50將整體進行密封(即進行樹脂密封)。該樹脂密封例如使用轉移鑄模技術進行。 Then, the whole is sealed by the mold resin 50 (that is, resin sealing is performed). This resin sealing is performed, for example, using a transfer molding technique.
圖8(a)至(d)係表示霍爾感測器之製造方法之步驟之剖視圖。如圖8(a)所示,準備具備下模具91與上模具92之鑄模模具90,於該鑄模模具90之模穴內配置打線接合後之金屬板120。其次,向模穴內、且耐熱性膜80之具有黏著層130之面(即與金屬板120接著之面)之側注入並填充加熱且熔融之鑄模樹脂50。藉此,對霍爾元件10、金屬板120之至少表面側、及導線31a至31d進行樹脂密封。鑄模樹脂50進一步加熱且硬化後,將該鑄模樹脂50自鑄模模具取出。再者,樹脂密封後於任意之步驟中,例如亦可將符號等(未圖示)標記於鑄模樹脂50之表面。 8(a) to (d) are cross-sectional views showing the steps of a method of manufacturing a Hall sensor. As shown in Fig. 8(a), a mold 90 having a lower mold 91 and an upper mold 92 is prepared, and a metal plate 120 after wire bonding is disposed in a cavity of the mold 90. Next, the heated and molten mold resin 50 is injected and filled into the cavity and the side of the heat-resistant film 80 having the adhesive layer 130 (i.e., the surface opposite to the metal plate 120). Thereby, at least the surface side of the Hall element 10 and the metal plate 120, and the wires 31a to 31d are resin-sealed. After the mold resin 50 is further heated and hardened, the mold resin 50 is taken out from the mold. Further, in any step after the resin sealing, for example, a symbol or the like (not shown) may be marked on the surface of the mold resin 50.
其次,如圖8(b)所示,自絕緣層40及鑄模樹脂50剝離耐熱性膜80。藉此,於霍爾元件10之背面殘留有絕緣層40,並且自絕緣層40及鑄模樹脂50剝離耐熱性膜80。 Next, as shown in FIG. 8(b), the heat-resistant film 80 is peeled off from the insulating layer 40 and the mold resin 50. Thereby, the insulating layer 40 remains on the back surface of the Hall element 10, and the heat resistant film 80 is peeled off from the insulating layer 40 and the mold resin 50.
繼而,如圖8(c)所示,對金屬板120之自鑄模樹脂50露出之面(至少各引線端子21a至21d之自鑄模樹脂50露出之背面)實施外裝鍍敷,形成外裝鍍敷層60a至60d。 Then, as shown in FIG. 8(c), the surface of the metal plate 120 exposed from the mold resin 50 (at least the back surface of each of the lead terminals 21a to 21d exposed from the mold resin 50) is subjected to exterior plating to form an exterior plating. The layers 60a to 60d are applied.
其次,如圖8(d)所示,於鑄模樹脂50之上表面(即,霍爾感測器100之具有外裝鍍敷層60a至60d之面之相反側之面)貼附切割保護膠帶93。繼而,例如,沿圖7(e)所示之假想之雙點劃線使刮刀相對於金屬板120而相對地移動,切斷鑄模樹脂50及金屬板120(即進行切割)。即,將鑄模樹脂50及金屬板120針對複數個霍爾元件10之各者切割而單片化。切割之金屬板120成為引線端子21a至21d。 Next, as shown in Fig. 8(d), the cut protective tape is attached to the upper surface of the mold resin 50 (i.e., the side opposite to the surface of the Hall sensor 100 having the exterior plating layers 60a to 60d). 93. Then, for example, the doctor blade is relatively moved with respect to the metal plate 120 along the imaginary two-dot chain line shown in FIG. 7(e), and the mold resin 50 and the metal plate 120 are cut (ie, cut). That is, the mold resin 50 and the metal plate 120 are cut and diced for each of the plurality of Hall elements 10. The cut metal plate 120 becomes the lead terminals 21a to 21d.
經過以上之步驟,完成圖2(a)至(c)所示之霍爾感測器100。 Through the above steps, the Hall sensor 100 shown in Figs. 2(a) to (c) is completed.
以下,對實施形態2進行說明。於上述本實施形態1中,對使用絕緣漿料作為覆蓋霍爾元件10之背面之絕緣層40之情形進行了說明。然而,於本實施形態2中,絕緣層40並不限定於絕緣漿料。作為絕緣層40,亦可使用例如晶粒黏著膜,即切割.黏晶一體型膜之黏著層。 Hereinafter, the second embodiment will be described. In the first embodiment described above, the case where the insulating paste is used as the insulating layer 40 covering the back surface of the Hall element 10 has been described. However, in the second embodiment, the insulating layer 40 is not limited to the insulating paste. As the insulating layer 40, for example, a die attach film, that is, a cut can be used. The adhesive layer of the adhesive crystal integrated film.
根據此種構成,可發揮如下般之效果。即,使用晶粒黏著膜之黏著層作為覆蓋霍爾元件10之背面之絕緣層。藉此,可省去絕緣漿料之塗佈步驟,故而可有助於步驟數之削減。 According to such a configuration, the following effects can be exhibited. That is, an adhesive layer of a die attach film is used as an insulating layer covering the back surface of the Hall element 10. Thereby, the coating step of the insulating paste can be omitted, so that the number of steps can be reduced.
本實施形態之鏡頭模組具備霍爾感測器、安裝有磁鐵之鏡頭座、及根據來自霍爾感測器之外部端子之輸出信號即霍爾電動勢信號而使磁鐵移動之驅動線圈。本實施形態之霍爾感測器為薄型.小型,且磁性特性之不均較小,故而可正確地檢測出磁場。因此,可使鏡頭模組小型化,又可進行正確之位置檢測。由本實施形態之霍爾感測器偵測出安裝於鏡頭座之磁鐵之磁場,且根據所偵測之輸出信號而使驅動電流流過驅動線圈,藉此可精度良好地進行自動調焦控制或手振修正控制。又,本實施形態之霍爾感測器為薄型化.小型化,故而可使霍爾感測器內部之霍爾元件與磁鐵之位置靠近,從而可進行精度更佳之磁性偵測。 The lens module of the present embodiment includes a Hall sensor, a lens holder to which a magnet is attached, and a drive coil for moving the magnet based on a Hall electromotive force signal which is an output signal from an external terminal of the Hall sensor. The Hall sensor of this embodiment is thin. The size is small and the magnetic characteristics are small, so that the magnetic field can be detected correctly. Therefore, the lens module can be miniaturized and the correct position detection can be performed. The Hall sensor of the present embodiment detects the magnetic field of the magnet attached to the lens holder, and causes a driving current to flow through the driving coil according to the detected output signal, thereby accurately performing auto focus control or Hand vibration correction control. Moreover, the Hall sensor of the present embodiment is thinned. The miniaturization makes it possible to position the Hall element inside the Hall sensor close to the magnet, thereby enabling better magnetic detection.
如以上般,參照特定之實施形態對本發明進行了說明,但並非意欲藉由該等說明而限定發明。對本業者而言,藉由參照本發明之說明而使所揭示之實施形態之各種變化例與本發明之其他實施形態一併明瞭。因此應理解申請專利範圍亦包括本發明之技術範圍及要旨中所包含之該等變化例或實施形態。 The present invention has been described with reference to the specific embodiments thereof, but is not intended to limit the invention. Various modifications of the disclosed embodiments will be apparent to those skilled in the <RTIgt; Therefore, it is to be understood that the scope of the invention is intended to cover such modifications and embodiments.
10‧‧‧霍爾元件 10‧‧‧ Hall element
11‧‧‧基板 11‧‧‧Substrate
12‧‧‧磁感應部 12‧‧‧Magnetic induction department
13a‧‧‧電極部 13a‧‧‧Electrode
13c‧‧‧電極部 13c‧‧‧Electrode
21a‧‧‧引線端子 21a‧‧‧Lead terminal
21c‧‧‧引線端子 21c‧‧‧Lead terminal
30‧‧‧基材 30‧‧‧Substrate
40‧‧‧絕緣層 40‧‧‧Insulation
D‧‧‧階差 D‧‧‧ step
M‧‧‧基準面 M‧‧‧ datum
M1‧‧‧第1面 M1‧‧‧ first side
M2‧‧‧第2面 M2‧‧‧2nd
N1‧‧‧第1部位 N1‧‧‧Part 1
N2‧‧‧第2部位 N2‧‧‧ second part
p1‧‧‧高度 P1‧‧‧ height
p2‧‧‧高度 P2‧‧‧ height
T‧‧‧高度 T‧‧‧ Height
t‧‧‧高度 T‧‧‧ Height
Claims (20)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014204716 | 2014-10-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201617637A true TW201617637A (en) | 2016-05-16 |
TWI555995B TWI555995B (en) | 2016-11-01 |
Family
ID=55629797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104131016A TWI555995B (en) | 2014-10-03 | 2015-09-18 | Hall sensor manufacturing method and Hall sensor and lens module |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6085726B2 (en) |
KR (1) | KR101868760B1 (en) |
CN (1) | CN206558553U (en) |
TW (1) | TWI555995B (en) |
WO (1) | WO2016051726A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003002332A1 (en) * | 2001-06-28 | 2003-01-09 | Akio Kakehi | Data re-embodying system, its method, and measuring device |
US10128434B2 (en) * | 2016-12-09 | 2018-11-13 | Rohm Co., Ltd. | Hall element module |
JP7009157B2 (en) * | 2016-12-28 | 2022-01-25 | ローム株式会社 | Semiconductor device |
CN110376537B (en) * | 2017-12-19 | 2020-07-24 | 大连理工大学 | Manufacturing method of semiconductor three-dimensional Hall sensor suitable for high-temperature working environment |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001053372A (en) * | 1999-08-05 | 2001-02-23 | Mitsumi Electric Co Ltd | Laser module |
CN1369905A (en) * | 2001-02-16 | 2002-09-18 | 安普生科技股份有限公司 | Package method for high-correctness high-sensitivity Hall sensor and IC |
JP2003218145A (en) * | 2002-01-18 | 2003-07-31 | Sony Corp | Method of manufacturing resin-sealed semiconductor device |
JP2005158778A (en) * | 2003-11-20 | 2005-06-16 | New Japan Radio Co Ltd | Manufacturing method for lead frame and for semiconductor device |
JP4786986B2 (en) * | 2005-09-29 | 2011-10-05 | 旭化成エレクトロニクス株式会社 | Electronic components |
JP2007294568A (en) * | 2006-04-24 | 2007-11-08 | Denso Corp | Semiconductor device |
KR101657330B1 (en) * | 2009-05-15 | 2016-09-13 | 로무 가부시키가이샤 | Semiconductor dece |
JP2010283252A (en) * | 2009-06-08 | 2010-12-16 | Denso Corp | Semiconductor device and method of manufacturing the same |
DE102011077580A1 (en) * | 2011-06-16 | 2012-12-20 | Robert Bosch Gmbh | Hall sensor and method for operating a Hall sensor |
US20140091465A1 (en) * | 2012-09-28 | 2014-04-03 | Texas Instruments Incorporated | Leadframe having sloped metal terminals for wirebonding |
CN106784300A (en) * | 2012-12-14 | 2017-05-31 | 旭化成微电子株式会社 | The manufacture method of Magnetic Sensor and magnet sensor arrangement and Magnetic Sensor |
TWI493762B (en) * | 2013-01-30 | 2015-07-21 | Univ Nat Taipei Technology | Two - dimensional folded Hall - sensing element |
JP2014178452A (en) * | 2013-03-14 | 2014-09-25 | Asahi Kasei Electronics Co Ltd | Position detecting device |
-
2015
- 2015-09-18 TW TW104131016A patent/TWI555995B/en active
- 2015-09-18 WO PCT/JP2015/004807 patent/WO2016051726A1/en active Application Filing
- 2015-09-18 CN CN201590001011.XU patent/CN206558553U/en active Active
- 2015-09-18 KR KR1020177002474A patent/KR101868760B1/en active IP Right Grant
- 2015-09-18 JP JP2016551521A patent/JP6085726B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20170028378A (en) | 2017-03-13 |
CN206558553U (en) | 2017-10-13 |
JPWO2016051726A1 (en) | 2017-04-27 |
KR101868760B1 (en) | 2018-06-18 |
WO2016051726A1 (en) | 2016-04-07 |
TWI555995B (en) | 2016-11-01 |
JP6085726B2 (en) | 2017-02-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI543417B (en) | Magnetic sensor and magnetic sensor device, magnetic sensor manufacturing method | |
TWI527175B (en) | Etch-back type semiconductor package, substrate and manufacturing method thereof | |
JP6480622B2 (en) | Hall sensor | |
TWI555995B (en) | Hall sensor manufacturing method and Hall sensor and lens module | |
TW201340261A (en) | Semiconductor device and manufacturing method thereof | |
JP6986385B2 (en) | Semiconductor device, mounting structure of semiconductor device | |
TW201436314A (en) | Magnetic sensor and magnetic sensor device | |
TWI555996B (en) | Hall sensor and lens module | |
CN107768513B (en) | Semiconductor device and mounting structure of semiconductor device | |
JP6718754B2 (en) | Semiconductor device | |
JP7325384B2 (en) | Semiconductor device manufacturing method | |
JP6744149B2 (en) | Semiconductor device and manufacturing method thereof | |
JP6353287B2 (en) | Hall sensor | |
JP6433769B2 (en) | Hall sensor and method of manufacturing hall sensor | |
JP2006196809A (en) | Semiconductor chip, method for manufacturing same and semiconductor device | |
CN108028314B (en) | Hall element, Hall sensor and lens module | |
JP6553416B2 (en) | Hall sensor | |
JP2018074067A (en) | Semiconductor device | |
JP2017117995A (en) | Electronic apparatus | |
JP2009302427A (en) | Semiconductor device, and method of manufacturing the same | |
JP2018066722A (en) | Semiconductor device | |
TW201640615A (en) | Stacked package device and method for fabricating the same | |
TW201810545A (en) | Electronic package and the manufacture thereof | |
JP2018074066A (en) | Semiconductor device | |
TW201442125A (en) | Method of manufacturing semiconductor package |