TW201436314A - Magnetic sensor and magnetic sensor device - Google Patents
Magnetic sensor and magnetic sensor device Download PDFInfo
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Abstract
Description
本發明係關於一種磁性感測器，尤其關於一種即便於薄型化之片狀件中電流反向流動之情形時，亦可防止漏電流之增大之磁性感測器。 The present invention relates to a magnetic sensor, and more particularly to a magnetic sensor capable of preventing an increase in leakage current even when a current flows in a reverse direction in a thinned sheet member.
作為利用霍爾效應之磁性感測器，已知有例如檢測磁性(磁場)並輸出與其大小成比例之類比信號之霍爾元件、或檢測磁性並輸出數位信號之霍爾IC。例如於專利文獻1中，揭示有具備引線框、片狀件(即，磁性感測器晶片)及金屬細線之磁性感測器。於該磁性感測器中，引線框具有為獲得與外部之電性連接而配置於四角隅之端子，片狀件搭載於引線框之島狀物上。且，片狀件所具有之電極與引線框所具有之各端子以金屬細線連接。 As a magnetic sensor using the Hall effect, for example, a Hall element that detects magnetic (magnetic field) and outputs an analog signal proportional to its size, or a Hall IC that detects magnetism and outputs a digital signal is known. For example, Patent Document 1 discloses a magnetic sensor including a lead frame, a sheet member (that is, a magnetic sensor wafer), and a metal thin wire. In the magnetic sensor, the lead frame has a terminal disposed at four corners in order to obtain electrical connection with the outside, and the sheet member is mounted on the island of the lead frame. Further, the electrode of the sheet member and each terminal of the lead frame are connected by a thin metal wire.
[專利文獻1]日本專利特開2007-95788號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-95788
另外，於專利文獻1所揭示之磁性感測器中，可將引線框所具有之配置於四角隅之引線端子中之連接於接地電位之端子(以下，為接地端子)與島狀物設為一體。藉此，島狀物之電位成為接地電位，而可防止電荷積存於島狀物中，故可抑制磁性感測器檢測磁性時產生雜訊。 Further, in the magnetic sensor disclosed in Patent Document 1, the terminal (hereinafter referred to as a ground terminal) and the island which are connected to the ground potential among the lead terminals of the lead frame which are disposed in the lead frame can be set as One. Thereby, the potential of the island becomes a ground potential, and the electric charge can be prevented from being accumulated in the island, so that it is possible to suppress the occurrence of noise when the magnetic sensor detects the magnetism.
又近年來，伴隨電子機器之小型化等，磁性感測器之小型、薄型化亦正在發展。例如，磁性感測器之封裝後之大小(即，封裝尺寸)已實現縱1.6mm、橫0.8mm、厚度0.38mm。又，藉由進一步減薄片狀件，亦可使封裝尺寸之厚度為0.30mm。 In recent years, with the miniaturization of electronic devices and the like, the size and thickness of magnetic sensors have been increasing. For example, the size of the magnetic sensor (ie, package size) has been achieved by 1.6 mm in length, 0.8 mm in width, and 0.38 mm in thickness. Further, by further reducing the sheet member, the thickness of the package size can be made 0.30 mm.
此處，若如上述般磁性感測器之小型、薄型化發展，則於將磁性感測器安裝於配線基板或插口等時，俯視下看錯磁性感測器之朝向之可能性變高。例如圖8(a)所示，將磁性感測器300正確地安裝於配線基板400之情形時，引線框之接地端子311係連接於配線基板400之接地用配線411，引線框之電源端子313係連接於配線基板400之電源用配線413。然而，若磁性感測器300如上述般小型化，則難以利用肉眼識別印刷於封裝表面之文字、符號等(例如，A、B、C、D)，而難以基於該等符號等判斷磁性感測器300之朝向。其結果，例如圖8(b)所示，導致反向地安裝磁性感測器300，將接地端子311連接於電源用配線413，將電源端子313連接於接地用配線411之可能性變高。 When the magnetic sensor is small and thin, as described above, when the magnetic sensor is mounted on a wiring board, a socket, or the like, the possibility of looking at the orientation of the magnetic sensor in a plan view is high. For example, when the magnetic sensor 300 is correctly mounted on the wiring substrate 400, as shown in FIG. 8(a), the ground terminal 311 of the lead frame is connected to the ground wiring 411 of the wiring substrate 400, and the power supply terminal 313 of the lead frame. The power supply wiring 413 is connected to the wiring board 400. However, if the magnetic sensor 300 is miniaturized as described above, it is difficult to visually recognize characters, symbols, and the like (for example, A, B, C, and D) printed on the surface of the package, and it is difficult to determine magnetic sensitivity based on the symbols or the like. The orientation of the detector 300. As a result, for example, as shown in FIG. 8( b ), the magnetic sensor 300 is mounted in the reverse direction, the ground terminal 311 is connected to the power supply wiring 413 , and the power supply terminal 313 is likely to be connected to the ground wiring 411 .
再者，暫時如圖8(b)所示般反向地安裝磁性感測器300之情形時，雖電流自接地端子311向電源端子313(即，反向)流動，但可於其他引線端子312、314間測定電位差。又，由於島狀物315固定為電源電位，而累積於島狀物315之電荷保持為固定量，故亦可抑制產生雜訊。因此，即便於反向地安裝磁性感測器300之情形時，其動作亦應該不會產生較大之問題。 Further, when the magnetic sensor 300 is temporarily mounted as shown in FIG. 8(b), the current flows from the ground terminal 311 to the power terminal 313 (ie, reverse), but can be used for other lead terminals. The potential difference was measured between 312 and 314. Further, since the island 315 is fixed to the power source potential, and the electric charge accumulated in the island 315 is kept at a fixed amount, noise generation can be suppressed. Therefore, even when the magnetic sensor 300 is mounted in the reverse direction, the action should not cause a large problem.
然而，本案發明人發現若反向地安裝磁性感測器300，而電流反向流動，則漏電流會變大(第1個問題)。又，發現配置於島狀物315上之片狀件越薄，則該漏電流越會增大(第2個問題)。 However, the inventors of the present invention found that if the magnetic sensor 300 is installed in the reverse direction and the current flows in the reverse direction, the leakage current becomes large (the first problem). Further, it is found that the thinner the sheet member disposed on the island 315, the more the leakage current increases (the second problem).
因此，本發明係鑒於如上述般本案發明人所發現之第1、第2個問題而完成者，其目的在於提供一種即便於薄型化之磁性感測器中電流反向流動之情形時，亦可防止漏電流之增大之磁性感測器。 Accordingly, the present invention has been made in view of the first and second problems discovered by the inventors of the present invention as described above, and an object thereof is to provide a case where a current flows in a reverse direction even in a thinned magnetic sensor. A magnetic sensor that prevents an increase in leakage current.
本發明者針對產生上述第1、第2個問題之原因(機制)，如以下般進行研究。 The inventors of the present invention conducted studies on the causes (mechanisms) of the first and second problems described above.
圖9(a)及(b)係表示本案發明人所研究之漏電流增大之機制之概念圖。於圖9(a)及(b)所示之磁性感測器300中，片狀件320係經由銀(Ag)膏340而安裝於引線框310之島狀物315上。又，引線框310具有與島狀物315成為一體之引線端子(即，島狀物端子)311、與自島狀物315分離之電源端子313。如圖9(a)所示，將磁性感測器300正確地安裝於配線基板或插口等之情形時，島狀物端子311成為接地端子。又，片狀件320與Ag膏340之接合面成為半導體(例如，GaAs)與金屬(Ag)之肖特基接面。 Figures 9(a) and (b) are conceptual diagrams showing the mechanism of increase in leakage current studied by the inventors of the present invention. In the magnetic sensor 300 shown in FIGS. 9(a) and 9(b), the sheet member 320 is attached to the island 315 of the lead frame 310 via a silver (Ag) paste 340. Further, the lead frame 310 has a lead terminal (ie, an island terminal) 311 integrated with the island 315, and a power supply terminal 313 separated from the island 315. As shown in FIG. 9(a), when the magnetic sensor 300 is correctly mounted on a wiring board, a socket, or the like, the island terminal 311 serves as a ground terminal. Further, the bonding surface between the sheet member 320 and the Ag paste 340 serves as a Schottky junction between the semiconductor (for example, GaAs) and the metal (Ag).
圖9(a)所示之情形時，由於對該肖特基接面施加反向偏壓，故而電流不會自片狀件320流向島狀物315。電流係自電源端子313通過金屬細線351、片狀件320之活性層321、金屬細線352，而流向島狀物端子311。 In the case shown in Fig. 9(a), since a reverse bias is applied to the Schottky junction, current does not flow from the sheet member 320 to the island 315. The current flows from the power supply terminal 313 through the thin metal wires 351, the active layer 321 of the sheet member 320, and the thin metal wires 352 to the island terminals 311.
另一方面，如圖9(b)所示，反向地安裝磁性感測器300之情形時，島狀物端子311成為電源端子，電源端子313成為接地端子。該情形時，對片狀件320與Ag膏340之肖特基接面施加正向偏壓。 On the other hand, as shown in FIG. 9(b), when the magnetic sensor 300 is mounted in the reverse direction, the island terminal 311 serves as a power supply terminal, and the power supply terminal 313 serves as a ground terminal. In this case, a forward bias is applied to the Schottky junction of the sheet member 320 and the Ag paste 340.
此處，由於構成片狀件320之半導體(例如，GaAs)為半絕緣性(≒超高電阻)，故而片狀件320較厚時即便對肖特基接面施加正向偏壓，仍幾乎不流通電流。然而，若將片狀件320薄化，則電阻值與其厚度之減少量成比例地減少。因此，伴隨片狀件320之薄型化，電流易朝肖特基接面之正向流動。即，漏電流易以島狀物端子311→島狀物315→Ag膏340→片狀件320→金屬細線351→電源端子313之路徑流動。 Here, since the semiconductor (for example, GaAs) constituting the sheet member 320 is semi-insulating (≒ ultra-high resistance), even when the sheet member 320 is thick, even if a forward bias is applied to the Schottky junction, almost No current flow. However, if the sheet member 320 is thinned, the resistance value decreases in proportion to the amount of decrease in thickness. Therefore, with the thinning of the sheet member 320, the current easily flows in the forward direction of the Schottky junction. That is, the leakage current easily flows in the path of the island terminal 311 → island 315 → Ag paste 340 → sheet member 320 → metal thin line 351 → power source terminal 313.
基於以上之研究，作為解決第1、第2個問題之方法，本案發明 人提案出於具有島狀物端子之磁性感測器中使用絕緣性接著層代替Ag膏。 Based on the above research, as a method for solving the first and second problems, the present invention It has been proposed to use an insulating adhesive layer instead of an Ag paste for a magnetic sensor having an island terminal.
<磁性感測器> <Magnetic Sensor>
即，本發明之一態樣之磁性感測器之特徵在於包含：引線框，其包含島狀物及配置於該島狀物之周圍之複數個引線端子；片狀件，其經由接著層而安裝於上述島狀物上；及複數條導線，其將上述片狀件所具有之複數個電極部與上述複數個引線端子分別電性連接；上述複數個引線端子包含電性連接於上述島狀物之島狀物端子；且上述接著層為將上述島狀物與上述片狀件之間絕緣之絕緣性接著層。此處，「片狀件」係指磁性感測器晶片，可列舉例如霍爾元件或霍爾IC。 That is, a magnetic sensor according to an aspect of the present invention includes: a lead frame including an island and a plurality of lead terminals disposed around the island; and a sheet member that passes through the adhesive layer Mounted on the island; and a plurality of wires electrically connecting the plurality of electrode portions of the sheet member and the plurality of lead terminals; wherein the plurality of lead terminals comprise electrically connected to the island shape An island-shaped terminal; and the adhesive layer is an insulating adhesive layer that insulates between the island and the sheet. Here, the "sheet member" refers to a magnetic sensor wafer, and examples thereof include a Hall element or a Hall IC.
又，上述磁性感測器之特徵亦可在於：上述絕緣性接著層包含熱硬化型樹脂作為其成分。 Further, the magnetic sensor may be characterized in that the insulating adhesive layer contains a thermosetting resin as a component thereof.
又，上述磁性感測器之特徵亦可在於：上述絕緣性接著層進而包含紫外線硬化型樹脂作為其成分。 Further, the magnetic sensor may be characterized in that the insulating adhesive layer further contains an ultraviolet curable resin as a component thereof.
又，上述磁性感測器之特徵亦可在於：上述絕緣性接著層中之介置於上述島狀物與上述片狀件之間之部分的厚度為至少2μm以上。 Further, the magnetic sensor may be characterized in that a thickness of a portion interposed between the island and the sheet member in the insulating adhesive layer is at least 2 μm or more.
<磁性感測器之製造方法> <Method of Manufacturing Magnetic Sensor>
本發明之另一態樣之磁性感測器之製造方法之特徵在於包括以下步驟：經由接著層將片狀件安裝於包含島狀物及配置於該島狀物之周圍之複數個引線端子之引線框的上述島狀物上；及以複數條導線將上述片狀件所包含之複數個電極部與上述複數個引線端子分別電性連接；上述複數個引線端子包含電性連接於上述島狀物之島狀物端子；且於安裝上述片狀件之步驟中，藉由使用絕緣性接著層作為上述接著層，而將上述島狀物與上述片狀件之間絕緣。 A method of manufacturing a magnetic sensor according to another aspect of the present invention includes the steps of: mounting a sheet member on a plurality of lead terminals including an island and disposed around the island via an adhesive layer; And the plurality of electrode portions included in the sheet member and the plurality of lead terminals are electrically connected to each other by a plurality of wires; the plurality of lead terminals comprise electrically connected to the island shape And the island-shaped terminal; and in the step of mounting the sheet member, the island is insulated from the sheet member by using an insulating backing layer as the adhesive layer.
又，上述磁性感測器之製造方法之特徵亦可在於進而包括以下步驟：於安裝上述磁性感測器之前，於嵌入有複數之上述片狀件之基 板之與具有上述各電極部之面為相反側之面，貼附固晶膜；切割貼附有上述固晶膜之上述基板，而將嵌入於該基板之複數之上述片狀件單片化；及自上述固晶膜分離單片化之上述片狀件；於自上述固晶膜分離上述片狀件之步驟中，自該固晶膜之基材將絕緣性之黏著層與上述片狀件一起剝離；且於安裝上述磁性感測器之步驟中，使用自上述基材剝離之上述黏著層作為上述絕緣性接著層。 Moreover, the method of manufacturing the magnetic sensor may further include the step of: embedding a plurality of the above-mentioned sheet members before mounting the magnetic sensor a plate is attached to the surface opposite to the surface of each of the electrode portions, and a die-bonding film is attached; the substrate on which the die-bonding film is attached is cut, and the plurality of the sheet-like members embedded in the substrate are singulated And separating the above-mentioned sheet member from the above-mentioned solid crystal film; in the step of separating the sheet member from the solid crystal film, the insulating adhesive layer and the sheet form are formed from the substrate of the solid crystal film The member is peeled off together; and in the step of mounting the magnetic sensor, the adhesive layer peeled off from the substrate is used as the insulating adhesive layer.
根據本發明之一態樣，由於利用絕緣性接著層使島狀物與片狀件之間絕緣，故而可防止於島狀物(金屬)與片狀件(半導體)之間形成肖特基接面，而可防止電流朝該肖特基接面之正向(即，自金屬向半導體之方向)流動。藉此，即便於薄型化之片狀件中電流反向流動之情形時，亦可防止漏電流之增大。 According to an aspect of the present invention, since the insulating layer is used to insulate the island from the sheet member, the Schottky connection between the island (metal) and the sheet member (semiconductor) can be prevented. The surface prevents current from flowing in the forward direction of the Schottky junction (ie, from the metal to the semiconductor). Thereby, even in the case where the current flows in the opposite direction in the thinned sheet member, the increase in the leakage current can be prevented.
10‧‧‧引線框 10‧‧‧ lead frame
11‧‧‧島狀物 11‧‧‧ island
12‧‧‧島狀物端子(連接於島狀物之引線端子) 12‧‧‧ island terminal (connected to the lead terminal of the island)
13‧‧‧引線端子 13‧‧‧Lead terminal
14‧‧‧引線端子 14‧‧‧Lead terminal
15‧‧‧引線端子 15‧‧‧Lead terminal
20‧‧‧片狀件 20‧‧‧Flakes
21‧‧‧GaAs基板 21‧‧‧GaAs substrate
22‧‧‧活性層 22‧‧‧Active layer
23a‧‧‧電極 23a‧‧‧Electrode
23b‧‧‧電極 23b‧‧‧Electrode
23c‧‧‧電極 23c‧‧‧electrode
23d‧‧‧電極 23d‧‧‧electrode
30‧‧‧絕緣膏 30‧‧‧Insulating paste
41‧‧‧金屬細線 41‧‧‧Metal thin wire
42‧‧‧金屬細線 42‧‧‧Metal thin wire
43‧‧‧金屬細線 43‧‧‧Metal thin wire
44‧‧‧金屬細線 44‧‧‧Metal thin wire
50‧‧‧鑄模樹脂 50‧‧‧Moulding resin
100‧‧‧磁性感測器 100‧‧‧Magnetic sensor
110‧‧‧引線框基板 110‧‧‧ lead frame substrate
130‧‧‧黏著層 130‧‧‧Adhesive layer
140‧‧‧膜基材 140‧‧‧ film substrate
150‧‧‧固晶膜 150‧‧‧ solid film
160‧‧‧半導體晶圓 160‧‧‧Semiconductor wafer
170‧‧‧刀片 170‧‧‧blade
180‧‧‧頂銷 180‧‧‧pinning
190‧‧‧筒夾 190‧‧‧ Collet
200‧‧‧磁性感測器 200‧‧‧Magnetic sensor
210‧‧‧載台 210‧‧‧Package
300‧‧‧磁性感測器 300‧‧‧Magnetic sensor
310‧‧‧引線框 310‧‧‧ lead frame
311‧‧‧接地端子 311‧‧‧ Grounding terminal
312‧‧‧引線端子 312‧‧‧Lead terminal
313‧‧‧電源端子 313‧‧‧Power terminal
314‧‧‧引線端子 314‧‧‧Lead terminal
315‧‧‧島狀物 315‧‧‧ island
320‧‧‧片狀件 320‧‧‧Flakes
321‧‧‧活性層 321‧‧‧active layer
340‧‧‧Ag膏 340‧‧‧Ag paste
351‧‧‧金屬細線 351‧‧‧Metal thin wire
352‧‧‧金屬細線 352‧‧‧Metal thin wire
400‧‧‧配線基板 400‧‧‧Wiring substrate
411‧‧‧接地用配線 411‧‧‧ Grounding wiring
413‧‧‧電源用配線 413‧‧‧Power supply wiring
A‧‧‧符號 A‧‧‧ symbol
B‧‧‧符號 B‧‧‧ symbol
C‧‧‧符號 C‧‧‧ symbol
D‧‧‧符號 D‧‧‧ symbol
圖1(a)~(c)係表示本發明之第1實施形態之磁性感測器100之構成例之圖。 1(a) to 1(c) are views showing a configuration example of a magnetic sensor 100 according to the first embodiment of the present invention.
圖2(a)~(e)係表示磁性感測器100之製造方法且按步驟順序予以表示之圖。 2(a) to 2(e) are diagrams showing a method of manufacturing the magnetic sensor 100 and showing them in order of steps.
圖3係用以說明第1實施形態之效果之圖。 Fig. 3 is a view for explaining the effects of the first embodiment.
圖4係模式性表示補償電壓Vu相對於輸入電壓Vin之偏差減少之效果之圖。 FIG. 4 is a view schematically showing an effect of reducing the deviation of the compensation voltage Vu with respect to the input voltage Vin.
圖5(a)~(c)係表示本發明之第2實施形態之磁性感測器200之構成例之圖。 (a) to (c) of FIG. 5 are views showing a configuration example of the magnetic sensor 200 according to the second embodiment of the present invention.
圖6(a)~(e)係表示第2實施形態之磁性感測器200之製造方法之圖。 6(a) to 6(e) are views showing a method of manufacturing the magnetic sensor 200 according to the second embodiment.
圖7係比較作為絕緣性接著層，使用絕緣膏30之情形與使用固晶膜150之黏著層130之情形之圖。 Fig. 7 is a view showing a case where the insulating paste 30 is used as the insulating adhesive layer and a case where the adhesive layer 130 of the die bonding film 150 is used.
圖8(a)、(b)係用以說明問題之圖。 Figures 8(a) and (b) are diagrams for explaining the problem.
圖9(a)、(b)係對產生問題之原因進行研究之圖。 Figures 9(a) and (b) are diagrams for investigating the cause of the problem.
以下，使用圖式說明本發明之實施形態。再者，於以下說明之各圖中，亦有對具有相同之構成之部分附加相同之符號，而省略其重複之說明之情形。 Hereinafter, embodiments of the present invention will be described using the drawings. In the following description, the same reference numerals will be given to the same components, and the description thereof will be omitted.
圖1(a)~(c)係表示本發明之第1實施形態之磁性感測器100之構成例之剖面圖與平面圖、及外觀圖。圖1(a)表示於虛線A-A'處切斷圖1(b)所得之剖面。又，於圖1(b)中，為避免圖式之複雜化，而省略表示鑄模樹脂。 1(a) to 1(c) are a cross-sectional view, a plan view, and an external view showing a configuration example of a magnetic sensor 100 according to the first embodiment of the present invention. Fig. 1(a) shows a cross section obtained by cutting Fig. 1(b) at a broken line A-A'. Further, in Fig. 1(b), in order to avoid complication of the drawings, the mold resin is omitted.
如圖1(a)~(c)所示，磁性感測器100具備引線框10、片狀件(即，磁性感測器晶片)20、絕緣膏30、複數條金屬細線41~44、及鑄模樹脂50。 As shown in FIGS. 1(a) to 1(c), the magnetic sensor 100 includes a lead frame 10, a sheet member (that is, a magnetic sensor wafer) 20, an insulating paste 30, a plurality of thin metal wires 41 to 44, and Molding resin 50.
引線框10具有用以載置片狀件20之島狀物11、與用以獲得與外部之電性連接之複數個引線端子12~15。如圖1(b)所示，引線端子12~15配置於島狀物11之周圍(例如，磁性感測器100之四角隅附近)。又，引線端子12與島狀物11成為一體，並與島狀物11電性連接。以下，將該引線端子12稱為島狀物端子。 The lead frame 10 has an island 11 for placing the sheet member 20 and a plurality of lead terminals 12 to 15 for electrical connection with the outside. As shown in FIG. 1(b), the lead terminals 12 to 15 are disposed around the island 11 (for example, in the vicinity of the square corner of the magnetic sensor 100). Further, the lead terminal 12 is integrated with the island 11 and electrically connected to the island 11. Hereinafter, the lead terminal 12 is referred to as an island terminal.
於本實施形態中，作為引線端子，較佳為具備島狀物端子12、夾隔島狀物11而與島狀物端子對向之第一引線端子14、第二引線端子15、及夾隔島狀物11而與第二引線端子15對向之第三引線端子13的形態。 In the present embodiment, it is preferable that the lead terminal has the island-shaped terminal 12 and the first lead terminal 14, the second lead terminal 15, and the spacer which are opposed to the island terminal. The island 11 has a shape of the third lead terminal 13 opposed to the second lead terminal 15.
引線框10包含例如銅(Cu)等金屬。又，引線框10之面側或背面之一部分亦可經蝕刻(即，半蝕刻)。 The lead frame 10 contains a metal such as copper (Cu). Also, one of the face side or the back side of the lead frame 10 may be etched (ie, half etched).
片狀件20為例如霍爾元件，其係經由絕緣膏30而安裝於引線框10之島狀物11上。片狀件20具有例如半絕緣性之砷化鎵(GaAs)基板21、形成於該GaAs基板21上且包含半導體薄膜之活性層(即，敏感部)22、及電性連接於活性層22之電極23a~23d。活性層22例如於俯視下為十字(交叉)型，且於交叉之4個前端部上分別設置有電極23a~23d。俯視下相對之一對電極23a、23c為用以將電流流向霍爾元件之輸入端子，於與連結電極23a、23c之線在俯視下正交之方向上相對之另一對電極23b、23d為用以自霍爾元件輸出電壓之輸出端子。片狀件20之厚度為例如0.12mm以下。 The sheet member 20 is, for example, a Hall element which is attached to the island 11 of the lead frame 10 via the insulating paste 30. The sheet member 20 has, for example, a semi-insulating gallium arsenide (GaAs) substrate 21, an active layer (ie, a sensitive portion) 22 formed on the GaAs substrate 21 and including a semiconductor film, and electrically connected to the active layer 22 Electrodes 23a to 23d. The active layer 22 is, for example, a cross (cross) type in plan view, and electrodes 23a to 23d are provided on the four end portions of the intersection. The pair of counter electrodes 23a and 23c in plan view are input terminals for flowing a current to the Hall element, and the other pair of electrodes 23b and 23d facing each other in a direction orthogonal to the line connecting the electrodes 23a and 23c are An output terminal for outputting a voltage from a Hall element. The thickness of the sheet member 20 is, for example, 0.12 mm or less.
絕緣膏30包含例如環氧系之熱硬化型樹脂與作為填料之二氧化矽(SiO2)作為其成分。於第1實施形態中，利用該絕緣膏30，將片狀件20之背面(即，與具有與活性層22之面為相反側之面)接著並固定於島狀物11之表面。又，藉由該絕緣膏30，片狀件20與島狀物11之間絕緣。片狀件20與島狀物11之間之絕緣膏30之厚度由填料尺寸決定，例如為5μm以上。 The insulating paste 30 contains, for example, an epoxy-based thermosetting resin and cerium oxide (SiO 2 ) as a filler. In the first embodiment, the back surface of the sheet member 20 (that is, the surface opposite to the surface having the active layer 22) is bonded to the surface of the island 11 by the insulating paste 30. Moreover, the sheet member 20 is insulated from the island 11 by the insulating paste 30. The thickness of the insulating paste 30 between the sheet member 20 and the island 11 is determined by the size of the filler, for example, 5 μm or more.
金屬細線41~44係將片狀件20所具有之電極23a~23d與島狀物端子12或引線端子13~15分別電性連接之導線，包含例如金(Au)。如圖1(b)所示，金屬細線41將島狀物端子12與電極23a連接，金屬細線42將引線端子13與電極23b連接。又，金屬細線43將引線端子14與電極23c連接，金屬細線44將引線端子15與電極23d連接。 The metal thin wires 41 to 44 are wires for electrically connecting the electrodes 23a to 23d of the chip member 20 to the island terminals 12 or the lead terminals 13 to 15, respectively, and include, for example, gold (Au). As shown in FIG. 1(b), the metal thin wires 41 connect the island terminals 12 to the electrodes 23a, and the metal thin wires 42 connect the lead terminals 13 to the electrodes 23b. Further, the metal thin wires 43 connect the lead terminals 14 to the electrodes 23c, and the metal thin wires 44 connect the lead terminals 15 to the electrodes 23d.
鑄模樹脂50係覆蓋片狀件20與金屬細線41~44及引線框10之至少正面側而予以保護。鑄模樹脂50包含例如環氧系之熱硬化型樹脂，可耐受回焊時之高熱。 The mold resin 50 protects the sheet member 20 from the metal thin wires 41 to 44 and at least the front side of the lead frame 10. The mold resin 50 contains, for example, an epoxy-based thermosetting resin which can withstand high heat during reflow.
於使用上述磁性感測器100檢測磁性(磁場)之情形時，將引線端子14連接於正電位(+)，且將島狀物端子12連接於接地電位(GND)，從 而電流自引線端子14流向島狀物端子12。且，測定引線端子13、15間之電位差V1-V2(=霍爾輸出電壓VH)。根據霍爾輸出電壓VH之大小而檢測磁場之大小，根據霍爾輸出電壓VH之正負而檢測磁場之方向。 When the magnetic (magnetic field) is detected using the magnetic sensor 100 described above, the lead terminal 14 is connected to the positive potential (+), and the island terminal 12 is connected to the ground potential (GND). Current flows from the lead terminal 14 to the island terminal 12. Further, the potential difference V1 - V2 between the lead terminals 13 and 15 (= Hall output voltage VH) is measured. The magnitude of the magnetic field is detected according to the magnitude of the Hall output voltage VH, and the direction of the magnetic field is detected based on the positive and negative of the Hall output voltage VH.
圖2(a)~(e)係表示磁性感測器100之製造方法且按步驟順序予以表示之平面圖。再者，於圖2(a)~(e)中，省略切割之刀片寬度(即，切口寬度)之圖示。如圖2(a)所示，首先，準備引線框基板110。該引線框基板110係複數個圖1(b)所示之引線框10在俯視下於縱向及橫向相連而成之基板。 2(a) to 2(e) are plan views showing the manufacturing method of the magnetic sensor 100 and shown in order of steps. Further, in Figs. 2(a) to (e), the illustration of the blade width (i.e., the slit width) of the cutting is omitted. As shown in FIG. 2(a), first, the lead frame substrate 110 is prepared. The lead frame substrate 110 is a plurality of substrates in which the lead frames 10 shown in FIG. 1(b) are connected in a vertical direction and a lateral direction in plan view.
其次，如圖2(b)所示，於引線框基板110之各島狀物11上塗佈絕緣膏30。此處，以使完成後之磁性感測器100中，於島狀物11與片狀件20之間不產生空隙，或島狀物11與片狀件20不接觸的方式，調整絕緣膏30之塗佈條件(例如，塗佈之範圍、塗佈之厚度等)。 Next, as shown in FIG. 2(b), the insulating paste 30 is applied onto each of the islands 11 of the lead frame substrate 110. Here, in the magnetic sensor 100 after completion, the gap is not generated between the island 11 and the sheet member 20, or the island 11 is not in contact with the sheet member 20, and the insulating paste 30 is adjusted. Coating conditions (for example, the range of coating, the thickness of coating, etc.).
繼而，如圖2(c)所示，於塗佈有絕緣膏30之島狀物11上配置片狀件20(即，進行晶粒接合)。且，於接合後進行熱處理(即，固化)，使絕緣膏30硬化。 Then, as shown in FIG. 2(c), the sheet member 20 is placed on the island 11 coated with the insulating paste 30 (that is, the die bonding is performed). Further, heat treatment (i.e., curing) is performed after bonding to harden the insulating paste 30.
其次，如圖2(d)所示，將金屬細線41~44之一端分別連接於島狀物端子12或引線端子13~15，將金屬細線41~44之另一端分別連接於電極23a~23d(即，進行打線接合)。 Next, as shown in FIG. 2(d), one end of the metal thin wires 41 to 44 is connected to the island terminal 12 or the lead terminals 13 to 15, respectively, and the other ends of the thin metal wires 41 to 44 are respectively connected to the electrodes 23a to 23d. (ie, wire bonding).
繼而，如圖2(e)所示，以鑄模樹脂50覆蓋片狀件20與金屬細線41~44及引線框10之至少正面側而予以保護(即，進行樹脂密封)。於樹脂密封後，於鑄模樹脂50之表面標記例如符號等(未圖示)。且，沿著例如2點鏈線，使刀片相對於引線框基板110相對地移動，而切斷鑄模樹脂50及引線框基板110(即，進行切割)，經過以上之步驟而完成圖1(a)~(c)所示之磁性感測器100。 Then, as shown in FIG. 2(e), the mold member 50 is covered with the sheet-like member 20, the metal thin wires 41 to 44, and at least the front side of the lead frame 10 to be protected (that is, resin-sealed). After the resin is sealed, for example, a symbol or the like (not shown) is marked on the surface of the mold resin 50. Further, the blade is relatively moved relative to the lead frame substrate 110 along, for example, a 2-point chain line, and the mold resin 50 and the lead frame substrate 110 are cut (ie, cut), and the above steps are completed to complete FIG. 1 (a) ) The magnetic sensor 100 shown in ~(c).
於該第1實施形態中，絕緣膏30對應於本發明之「絕緣性接著層」，金屬細線41~44對應於本發明之「複數條導線」。 In the first embodiment, the insulating paste 30 corresponds to the "insulating adhesive layer" of the present invention, and the metal thin wires 41 to 44 correspond to the "plurality of wires" of the present invention.
本發明之第1實施形態發揮以下效果。 The first embodiment of the present invention exerts the following effects.
(1)以絕緣性接著層(例如，絕緣膏30)使島狀物11與片狀件20之間絕緣。藉此，可防止於島狀物11(金屬)與片狀件20(半導體)之間形成肖特基接面，而可防止電流朝該肖特基接面之正向(即，自金屬向半導體之方向)流動。例如圖3所示，即便於電流朝與本來相反之方向(即，島狀物端子12→金屬細線41→電極23a→活性層22→電極23c→金屬細線43→引線端子14之方向)流動之情形時，亦可防止電流自島狀物11向片狀件20流動。因此，即便於反向地安裝薄型化之磁性感測器100，而電流反向流動之情形時，亦可防止漏電流之增大。 (1) The island 11 and the sheet member 20 are insulated by an insulating adhesive layer (for example, the insulating paste 30). Thereby, a Schottky junction can be prevented from being formed between the island 11 (metal) and the sheet member 20 (semiconductor), and current can be prevented from being forward toward the Schottky junction (ie, from the metal direction). The direction of the semiconductor) flows. For example, as shown in FIG. 3, even if the current flows in the opposite direction (ie, the island terminal 12 → the metal thin line 41 → the electrode 23 a → the active layer 22 → the electrode 23 c → the metal thin line 43 → the lead terminal 14) In this case, it is also possible to prevent current from flowing from the island 11 to the sheet member 20. Therefore, even when the thinned magnetism sensor 100 is mounted in the reverse direction and the current flows in the reverse direction, the increase in leakage current can be prevented.
即，於將本實施形態之磁性感測器安裝於印刷基板作為磁性感測器裝置之情形時，無論為以下任一形態均可抑制漏電流之增大：1)將印刷基板之接地端子連接於磁性感測器之島狀物端子，將印刷基板之電源端子連接於磁性感測器之第一引線端子之形態；2)將印刷基板之接地端子連接於磁性感測器之第一引線端子，將印刷基板之電源端子連接於磁性感測器之島狀物端子之形態。 In other words, when the magnetic sensor of the present embodiment is mounted on a printed circuit board as a magnetic sensor device, the increase in leakage current can be suppressed in any of the following ways: 1) connecting the ground terminal of the printed substrate In the island terminal of the magnetic sensor, the power terminal of the printed substrate is connected to the first lead terminal of the magnetic sensor; 2) the ground terminal of the printed substrate is connected to the first lead terminal of the magnetic sensor The power supply terminal of the printed circuit board is connected to the island terminal of the magnetic sensor.
若磁性感測器之小型、薄型化進展，則在將磁性感測器安裝於配線基板或插口等時，於俯視下看錯磁性感測器之朝向之可能性會變高，但即便於此情形時，根據本實施形態，亦無漏電流增大之問題而可加以使用。 When the magnetic sensor is made smaller and thinner, when the magnetic sensor is mounted on a wiring board, a socket, or the like, the possibility of looking at the orientation of the magnetic sensor in a plan view is high, but even if it is In this case, according to the present embodiment, there is no problem that the leakage current increases, and it can be used.
圖4係模式性表示補償電壓Vu相對於輸入電壓Vin之偏差減少之效果之圖。圖4之橫軸表示對於磁性感測器之輸入電壓Vin，縱軸表示磁性感測器之補償電壓Vu。輸入電壓Vin為磁性感測器之輸入端子間之電位差。Vin之正(+)係於自磁性感測器之第1引線端子向島狀物端 子流通電流之方向施加電壓之情形，負(-)係於朝與本來相反之方向流通電流之方向施加電壓之情形。又，補償電壓Vu為無磁性之環境下之輸出端子間之電位差。補償電壓Vu較理想為無論輸入電壓Vin之大小如何均為零(0)。 FIG. 4 is a view schematically showing an effect of reducing the deviation of the compensation voltage Vu with respect to the input voltage Vin. The horizontal axis of Fig. 4 represents the input voltage Vin for the magnetic sensor, and the vertical axis represents the compensation voltage Vu of the magnetic sensor. The input voltage Vin is the potential difference between the input terminals of the magnetic sensor. Vin's positive (+) is the first lead terminal of the self-magnetic sensor to the island end In the case where a voltage is applied in the direction in which the sub-current flows, a negative (-) is a case where a voltage is applied in a direction in which a current flows in a direction opposite to the original. Further, the compensation voltage Vu is a potential difference between the output terminals in a non-magnetic environment. The compensation voltage Vu is preferably zero (0) regardless of the magnitude of the input voltage Vin.
於片狀件之安裝中使用Ag膏之構造中，在輸入電壓為負(-)之情形時，相對於肖特基接面成為正向偏壓且電流自島狀物向片狀件流動。若將片狀件薄型化則肖特基接面之正向流動之電流變大，因此如圖4之虛線所示般補償電壓Vu之偏差變大。與此相對，於本發明之第1實施形態中說明之構造(即，片狀件之安裝中使用絕緣性接著層之構造)中，由於島狀物與片狀件之間絕緣，故而即便將片狀件薄型化，於島狀物與片狀件之間亦不會流通電流。因此，即便於薄型化之磁性感測器中將輸入電壓設為負(-)之情形時，亦如圖4之實線所示般，補償電壓Vu之偏差較小。如此，使用絕緣性接著層之構造與使用Ag膏之構造相比，可減少輸入電壓為負(-)時之補償電壓之偏差。 In the configuration in which the Ag paste is used in the mounting of the sheet member, when the input voltage is negative (-), it is forward biased with respect to the Schottky junction and current flows from the island to the sheet member. When the sheet member is made thinner, the current flowing in the forward direction of the Schottky junction becomes large, so that the deviation of the compensation voltage Vu becomes large as shown by the broken line in FIG. On the other hand, in the structure described in the first embodiment of the present invention (that is, the structure in which the insulating backing layer is used for the mounting of the sheet member), since the island and the sheet member are insulated, even if The sheet member is thinned, and no current flows between the island and the sheet member. Therefore, even when the input voltage is set to negative (-) in the thinned magnetic sensor, as shown by the solid line in FIG. 4, the deviation of the compensation voltage Vu is small. As described above, the structure using the insulating adhesive layer can reduce the variation of the compensation voltage when the input voltage is negative (-) as compared with the structure using the Ag paste.
(2)又，由於可防止漏電流之增大，故而可使片狀件20之薄型化更加進展。因此，可有助於磁性感測器100之更加小型、薄型化。 (2) Further, since the increase in leakage current can be prevented, the thinning of the sheet member 20 can be further progressed. Therefore, the magnetic sensor 100 can be made smaller and thinner.
(3)又，由於可防止漏電流之增大，故而可抑制消耗電力之增大。 (3) Further, since the increase in leakage current can be prevented, the increase in power consumption can be suppressed.
(4)又，絕緣性接著層包含例如環氧系之熱硬化型樹脂作為其成分。因此，藉由於晶粒接合後進行固化，可容易地將片狀件20固定於島狀物11上。 (4) Further, the insulating adhesive layer contains, for example, an epoxy-based thermosetting resin as a component thereof. Therefore, the sheet member 20 can be easily fixed to the island 11 by curing after the die bonding.
(5)再者，絕緣性接著層中之介置於片狀件20與島狀物11之間之部分的厚度較佳為至少確保2μm以上。根據本案發明人之見解，只要上述厚度為至少2μm以上，便可提高片狀件20與島狀物11之間之絕緣之可靠性，而可防止形成肖特基接面。 (5) Further, the thickness of the portion of the insulating adhesive layer interposed between the sheet member 20 and the island 11 is preferably at least 2 μm or more. According to the findings of the inventors of the present invention, as long as the thickness is at least 2 μm or more, the reliability of insulation between the sheet member 20 and the island 11 can be improved, and the Schottky junction can be prevented from being formed.
於上述第1實施形態中，片狀件20亦可為霍爾IC而非霍爾元件。即便為此種構成，亦發揮第1實施形態之效果(1)~(5)。 In the first embodiment described above, the sheet member 20 may be a Hall IC instead of a Hall element. Even in such a configuration, the effects (1) to (5) of the first embodiment are exhibited.
於上述第1實施形態中，已對使用絕緣膏30作為使片狀件20與島狀物11之間絕緣之絕緣性接著層之情形予以說明。然而，本發明中，絕緣性接著層只要為具備絕緣性與接著性者即可，並不限定於絕緣膏30。作為絕緣性接著層，亦可以片狀之形態使用例如固晶膜(即，切晶．黏晶一體型膜)之黏著層。於第2實施形態中，對該點進行說明。 In the first embodiment described above, the case where the insulating paste 30 is used as an insulating adhesive layer for insulating the sheet member 20 from the island 11 has been described. However, in the present invention, the insulating adhesive layer is not limited to the insulating paste 30 as long as it has insulating properties and adhesion properties. As the insulating adhesive layer, an adhesive layer such as a die-bonding film (that is, a crystal-cutting film or a die-bonded film) may be used in the form of a sheet. This point will be described in the second embodiment.
圖5(a)~(c)係表示本發明之第2實施形態之磁性感測器200之構成例之剖面圖與平面圖、及外觀圖。圖5(a)表示於虛線B-B'處切斷圖5(b)所得之剖面。又，於圖5(b)中，為避免圖式之複雜化，而省略表示鑄模樹脂50。 5(a) to 5(c) are a cross-sectional view, a plan view, and an external view showing a configuration example of a magnetic sensor 200 according to a second embodiment of the present invention. Fig. 5(a) shows a cross section obtained by cutting Fig. 5(b) at the broken line B-B'. Further, in FIG. 5(b), in order to avoid complication of the drawings, the mold resin 50 is omitted.
如圖5(a)~(c)所示，磁性感測器200具備引線框10、片狀件20、絕緣性之黏著層130、複數條金屬細線41~44、及鑄模樹脂50。 As shown in FIGS. 5(a) to 5(c), the magnetic sensor 200 includes a lead frame 10, a sheet member 20, an insulating adhesive layer 130, a plurality of metal thin wires 41 to 44, and a mold resin 50.
黏著層130例如較佳為包含環氧系之熱硬化型樹脂、紫外線(UV)硬化型樹脂、及黏合劑樹脂作為其成分。 The adhesive layer 130 is preferably made of, for example, an epoxy-based thermosetting resin, an ultraviolet (UV) curable resin, and a binder resin.
於第2實施形態中，利用該黏著層130，將片狀件20之背面(即，與具有活性層22之面為相反側之面)接著並固定於島狀物11之表面。又，藉由該黏著層130，片狀件20與島狀物11之間絕緣。片狀件20與島狀物11之間之黏著層130之厚度較佳為例如2μm以上且30μm。更佳為10μm以上20μm以下。 In the second embodiment, the back surface of the sheet member 20 (that is, the surface opposite to the surface having the active layer 22) is attached to and fixed to the surface of the island 11 by the adhesive layer 130. Further, the sheet member 20 is insulated from the island 11 by the adhesive layer 130. The thickness of the adhesive layer 130 between the sheet member 20 and the island 11 is preferably, for example, 2 μm or more and 30 μm. More preferably, it is 10 μm or more and 20 μm or less.
再者，磁性感測器200之除黏著層130以外之構成與例如第1實施形態中說明之磁性感測器100相同。又，磁性感測器200之動作亦與磁性感測器100相同。 Further, the configuration of the magnetic sensor 200 other than the adhesive layer 130 is the same as that of the magnetic sensor 100 described in the first embodiment, for example. Further, the action of the magnetic sensor 200 is also the same as that of the magnetic sensor 100.
圖6(a)~(e)係按步驟順序表示本發明之第2實施形態之磁性感測器200之製造方法之剖面圖。 6(a) to 6(e) are cross-sectional views showing a method of manufacturing the magnetic sensor 200 according to the second embodiment of the present invention in order of steps.
如圖6(a)所示，首先準備固晶膜150。固晶膜150具有膜基材140、與配置於膜基材140之一面上之絕緣性之黏著層130。使嵌入有複數之片狀件20之半導體晶圓160之背面(即，與具有活性層22之面為相反側之面)接觸並接著於該固晶膜150之黏著層130(即，進行晶圓安裝)。 As shown in FIG. 6(a), the die bonding film 150 is first prepared. The die-bonding film 150 has a film substrate 140 and an insulating adhesive layer 130 disposed on one surface of the film substrate 140. Contacting the back surface of the semiconductor wafer 160 in which the plurality of the chip members 20 are embedded (that is, the surface opposite to the surface having the active layer 22) and then adhering to the adhesive layer 130 of the die bonding film 150 (ie, performing the crystal Round installation).
再者，於該第2實施形態中，為使後述之圖6(b)之步驟中維持利用黏著層130之片狀件20與膜基材140之接著，並使圖6(c)之步驟中黏著層130易自膜基材140剝離，亦可進行調整黏著層130之黏著力之處理。該調整黏著力之處理係於進行晶圓安裝之時序或其前後之時序進行。例如，可於進行晶圓安裝時，介隔載台加熱固晶膜150，而朝提高黏著層130之成分之一的黏合劑樹脂成分之黏著力，使半導體晶圓160與黏著層130更強地黏著之方向調整。又，可於進行晶圓安裝後，自固晶膜150之具有黏著層130之面之相反側，向該固晶膜150照射UV，使黏著層130之成分之一的UV硬化型樹脂成分硬化、凝固，藉此朝切割變得容易之方向，又，朝於接合時減小膜基劑140與黏著層130之黏著力之方向調整。如上述般，藉由進行介隔載台之加熱或UV照射之至少一者，而可朝提高黏著層130之黏著力，或使其稍微硬化而減小其黏著力之方向調整。 Further, in the second embodiment, in order to maintain the sheet member 20 using the adhesive layer 130 and the film substrate 140 in the step of Fig. 6(b) to be described later, the steps of Fig. 6(c) are performed. The middle adhesive layer 130 is easily peeled off from the film substrate 140, and the adhesion of the adhesive layer 130 can be adjusted. The process of adjusting the adhesion is performed at the timing of wafer mounting or at a timing before and after the wafer mounting. For example, when the wafer is mounted, the bonding substrate is heated to the solid crystal film 150, and the adhesion of the adhesive resin component of one of the components of the adhesive layer 130 is increased to make the semiconductor wafer 160 and the adhesive layer 130 stronger. Adjust the direction of the ground. Further, after the wafer is mounted, the solid film 150 may be irradiated with UV from the side opposite to the surface of the die-bonding film 150 having the adhesive layer 130, and the UV-curable resin component of one of the components of the adhesive layer 130 may be hardened. And solidifying, thereby making it easier to cut, and reducing the direction of adhesion of the film base 140 and the adhesive layer 130 toward bonding. As described above, by performing at least one of heating or UV irradiation of the spacer, the adhesion of the adhesive layer 130 can be increased, or the adhesion can be slightly hardened to reduce the direction of adhesion.
其次，如圖6(b)所示，使用例如刀片170切割半導體晶圓160，而將嵌入於半導體晶圓160之複數之片狀件20單片化。此處，不僅切割半導體晶圓160亦一同切割黏著層130。 Next, as shown in FIG. 6(b), the semiconductor wafer 160 is diced using, for example, the blade 170, and the plurality of sheets 20 embedded in the semiconductor wafer 160 are singulated. Here, not only the dicing of the semiconductor wafer 160 but also the adhesive layer 130 is cut.
繼而，如圖6(c)所示，以針狀之頂銷180上推片狀件20之背面，且以筒夾190吸附片狀件20之正面並上提(即，拾取)。再者，固晶膜150之黏著層130係如上述般預先藉由進行例如加熱或UV照射之至少 一者而朝減小其黏著力之方向進行過調整。因此，於拾取片狀件20之步驟中，黏著層130係在接著於片狀件20之背面之狀態下，自膜基材140剝離。 Then, as shown in Fig. 6(c), the back side of the sheet member 20 is pushed up by the needle-shaped top pin 180, and the front side of the sheet member 20 is sucked by the collet 190 and lifted up (i.e., picked up). Furthermore, the adhesive layer 130 of the die-bonding film 150 is preliminarily subjected to, for example, heating or UV irradiation as described above. One has been adjusted in the direction of reducing its adhesion. Therefore, in the step of picking up the sheet member 20, the adhesive layer 130 is peeled off from the film substrate 140 in a state of being attached to the back surface of the sheet member 20.
其次，如圖6(d)所示，將片狀件20之背面側經由黏著層130而安裝於引線框基板110之島狀物11上。此處，藉由以預先設定之載荷向島狀物11側按壓片狀件20，而將片狀件20接著並固定於島狀物11。又，於該安裝時，可介隔載台210加熱引線框10及黏著層130。藉由除施加載荷以外，亦進行加熱，有可提高片狀件20與島狀物11之接著力之情形。該安裝後，實施熱處理(固化)，使環氧樹脂系之熱效應型樹脂成分硬化，而獲得更充分之接著強度。此後之步驟與第1實施形態相同。即，如圖6(e)所示般進行打線接合，其後，進行樹脂密封。且，切割鑄模樹脂50及引線框基板110。經過此種步驟，而完成圖5(a)~(c)所示之磁性感測器200。 Next, as shown in FIG. 6(d), the back side of the sheet member 20 is attached to the island 11 of the lead frame substrate 110 via the adhesive layer 130. Here, the sheet member 20 is pressed and fixed to the island 11 by pressing the sheet member 20 toward the island 11 side with a predetermined load. Moreover, at the time of this mounting, the lead frame 10 and the adhesive layer 130 can be heated via the stage 210. Heating is also performed in addition to the application of the load, and the adhesion of the sheet member 20 to the island 11 can be improved. After the mounting, heat treatment (curing) is performed to harden the epoxy resin-based heat-effect resin component to obtain more sufficient bonding strength. The subsequent steps are the same as in the first embodiment. That is, wire bonding is performed as shown in FIG. 6(e), and thereafter, resin sealing is performed. Further, the mold resin 50 and the lead frame substrate 110 are cut. After this step, the magnetic sensor 200 shown in Figs. 5(a) to (c) is completed.
於該第2實施形態中，半導體晶圓160對應於本發明之「基板」。又，黏著層130對應於本發明之「絕緣性接著層」，膜基材140對應於本發明之「基材」。其他之對應關係與第1實施形態相同。 In the second embodiment, the semiconductor wafer 160 corresponds to the "substrate" of the present invention. Further, the adhesive layer 130 corresponds to the "insulating adhesive layer" of the present invention, and the film base material 140 corresponds to the "substrate" of the present invention. The other correspondence is the same as that of the first embodiment.
本發明之第2實施形態除發揮第1實施形態之效果(1)~(5)之效果以外，亦發揮以下之效果。 In addition to the effects (1) to (5) of the first embodiment, the second embodiment of the present invention also exhibits the following effects.
(1)使用固晶膜150之黏著層130作為使片狀件20與島狀物11之間接著且絕緣之絕緣性接著層。藉此，由於無須對複數之片狀件20之各者(或，島狀物11之各者)塗佈絕緣膏30，故而可有助於削減步驟數。 (1) The adhesive layer 130 of the die bond film 150 is used as an insulating adhesive layer which is followed by insulation between the sheet member 20 and the island 11. Thereby, since it is not necessary to apply the insulating paste 30 to each of the plurality of sheets 20 (or each of the islands 11), it is possible to contribute to the reduction in the number of steps.
(2)又，黏著層130例如包含黏合劑樹脂與UV硬化型樹脂作為其成分。因此，藉由進行熱處理，可朝提高黏著層130之黏著力而使半導體晶圓160與黏著層130更強地黏著之方向調整，又，藉由進行UV照射，可朝切割變得容易之方向，且朝減小膜基劑140與黏著層130之 黏著力之方向調整。藉此，於拾取片狀件20之步驟中，可與片狀件20一起將黏著層130自膜基材140容易地剝離。 (2) Further, the adhesive layer 130 contains, for example, a binder resin and a UV-curable resin as its constituents. Therefore, by performing the heat treatment, the adhesion of the semiconductor wafer 160 and the adhesive layer 130 can be adjusted to increase the adhesion of the adhesive layer 130, and the UV irradiation can be used to facilitate the cutting. And reducing the film base 140 and the adhesive layer 130 Adjust the direction of the adhesion. Thereby, in the step of picking up the sheet member 20, the adhesive layer 130 can be easily peeled off from the film substrate 140 together with the sheet member 20.
(3)又，由於黏著層130之黏性較高，故而與使用絕緣膏30之情形相比，可使片狀件20之側面之附膠極小。藉此，不會產生於片狀件20之正面附著樹脂之不良，又，有黏著層130之厚度亦不會變薄而可使厚度均一化之優點。 (3) Further, since the adhesive layer 130 is highly viscous, the side of the sheet member 20 can be made extremely small as compared with the case where the insulating paste 30 is used. Thereby, there is no possibility that the resin adheres to the front surface of the sheet member 20, and the thickness of the adhesive layer 130 does not become thin, and the thickness can be made uniform.
(4)又，如圖7所示，於使用黏著層130之情形時，關於其保管條件，有可以冷藏進行保管而不進行冷凍之優點。冷藏保管之情形時，有無需絕緣性接著層之解凍，而可於需要時馬上使用之優點。進而，關於步驟條件，亦有無須管理塗佈量，且濕潤擴散較小，附膠較小，厚度之偏差較小等優點。 (4) Further, as shown in Fig. 7, when the adhesive layer 130 is used, there are advantages in that the storage conditions can be stored in a refrigerator without being frozen. In the case of refrigerating storage, there is an advantage that the insulating layer is not required to be thawed, and it can be used as needed. Further, regarding the step conditions, there is also an advantage that it is not necessary to manage the coating amount, and the wet diffusion is small, the adhesive is small, and the thickness deviation is small.
於第2實施形態中，亦可應用第1實施形態中說明之變化例。即，片狀件20可為霍爾IC而非霍爾元件。即便為此種構成，仍除發揮第1實施形態之效果(1)~(5)以外，亦發揮第2實施形態之效果(1)~(4)。 In the second embodiment, a modification described in the first embodiment can also be applied. That is, the sheet member 20 can be a Hall IC instead of a Hall element. Even in such a configuration, the effects (1) to (4) of the second embodiment are exhibited in addition to the effects (1) to (5) of the first embodiment.
本發明並不限定於以上記載之各實施形態。可基於本領域技術人員之知識對各實施形態添加設計之變更等，此種添加變更等而成之態樣亦包含於本發明之範圍內。 The present invention is not limited to the embodiments described above. It is possible to add design changes and the like to the respective embodiments based on the knowledge of those skilled in the art, and such additions and the like are also included in the scope of the present invention.
10‧‧‧引線框 10‧‧‧ lead frame
11‧‧‧島狀物 11‧‧‧ island
12‧‧‧島狀物端子(連接於島狀物之引線端子) 12‧‧‧ island terminal (connected to the lead terminal of the island)
13‧‧‧引線端子 13‧‧‧Lead terminal
14‧‧‧引線端子 14‧‧‧Lead terminal
15‧‧‧引線端子 15‧‧‧Lead terminal
20‧‧‧片狀件 20‧‧‧Flakes
21‧‧‧GaAs基板 21‧‧‧GaAs substrate
22‧‧‧活性層 22‧‧‧Active layer
23a‧‧‧電極 23a‧‧‧Electrode
23b‧‧‧電極 23b‧‧‧Electrode
23c‧‧‧電極 23c‧‧‧electrode
23d‧‧‧電極 23d‧‧‧electrode
30‧‧‧絕緣膏 30‧‧‧Insulating paste
41‧‧‧金屬細線 41‧‧‧Metal thin wire
42‧‧‧金屬細線 42‧‧‧Metal thin wire
43‧‧‧金屬細線 43‧‧‧Metal thin wire
44‧‧‧金屬細線 44‧‧‧Metal thin wire
50‧‧‧鑄模樹脂 50‧‧‧Moulding resin
100‧‧‧磁性感測器 100‧‧‧Magnetic sensor
Claims (9)
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| JP2012236896A JP6105898B2 (en) | 2012-10-26 | 2012-10-26 | Magnetic sensor and manufacturing method thereof |
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| TW201436314A true TW201436314A (en) | 2014-09-16 |
| TWI616006B TWI616006B (en) | 2018-02-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP (1) | JP6105898B2 (en) |
| KR (3) | KR20140002654U (en) |
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| TW (1) | TWI616006B (en) |
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| TWI555996B (en) * | 2014-09-22 | 2016-11-01 | Asahi Kasei Microdevices Corp | Hall sensor and lens module |
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| CN105185900B (en) * | 2014-06-17 | 2018-07-06 | 旭化成微电子株式会社 | Hall sensor |
| JP6353287B2 (en) * | 2014-06-17 | 2018-07-04 | 旭化成エレクトロニクス株式会社 | Hall sensor |
| JP6110886B2 (en) * | 2014-06-17 | 2017-04-05 | 旭化成エレクトロニクス株式会社 | Hall sensor |
| GB2535683A (en) | 2014-11-03 | 2016-08-31 | Melexis Technologies Nv | Magnetic field sensor and method for making same |
| US11067643B2 (en) | 2014-11-03 | 2021-07-20 | Melexis Technologies Nv | Magnetic field sensor and method for making same |
| US10153424B2 (en) | 2016-08-22 | 2018-12-11 | Rohm Co., Ltd. | Semiconductor device and mounting structure of semiconductor device |
| JP6850838B2 (en) * | 2018-10-11 | 2021-03-31 | 旭化成エレクトロニクス株式会社 | Semiconductor element |
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| JP2680364B2 (en) * | 1988-08-05 | 1997-11-19 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
| JP2849100B2 (en) * | 1988-12-23 | 1999-01-20 | 旭化成工業株式会社 | Magnetoelectric conversion element and method of manufacturing the same |
| JP3464369B2 (en) * | 1997-10-17 | 2003-11-10 | 旭化成電子株式会社 | Method of manufacturing thin high-sensitivity Hall element |
| CN100346168C (en) * | 2002-07-29 | 2007-10-31 | 雅马哈株式会社 | Magnetic sensor producing method and lead wire frame |
| JP4980600B2 (en) * | 2005-09-27 | 2012-07-18 | 旭化成エレクトロニクス株式会社 | Magnetic sensor |
| JP2008071816A (en) | 2006-09-12 | 2008-03-27 | Renesas Technology Corp | Method for manufacturing semiconductor device |
| JP2008101183A (en) * | 2006-09-20 | 2008-05-01 | Hitachi Chem Co Ltd | Pressure-sensitive adhesive sheet, semiconductor device produced by using the same and method for producing the semiconductor device |
| JP2008141140A (en) * | 2006-12-05 | 2008-06-19 | Denso Corp | Semiconductor device |
| JP2009289966A (en) * | 2008-05-29 | 2009-12-10 | Denso Corp | Semiconductor device and method of manufacturing the same |
| JP5051021B2 (en) * | 2008-06-23 | 2012-10-17 | 株式会社デンソー | Electronic component manufacturing apparatus and manufacturing method |
| JP2010109253A (en) | 2008-10-31 | 2010-05-13 | Sanyo Electric Co Ltd | Semiconductor device and method of manufacturing the same |
| DE102011107703B4 (en) * | 2011-07-13 | 2015-11-26 | Micronas Gmbh | Integrated current sensor |
-
2012
- 2012-10-26 JP JP2012236896A patent/JP6105898B2/en active Active
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| TWI555996B (en) * | 2014-09-22 | 2016-11-01 | Asahi Kasei Microdevices Corp | Hall sensor and lens module |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014086677A (en) | 2014-05-12 |
| KR101543970B1 (en) | 2015-08-11 |
| KR20140128911A (en) | 2014-11-06 |
| KR101481368B1 (en) | 2015-01-14 |
| JP6105898B2 (en) | 2017-03-29 |
| KR20140092791A (en) | 2014-07-24 |
| CN203536475U (en) | 2014-04-09 |
| KR20140002654U (en) | 2014-05-08 |
| TWI616006B (en) | 2018-02-21 |
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