TW201810545A - Electronic package and the manufacture thereof - Google Patents

Electronic package and the manufacture thereof Download PDF

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Publication number
TW201810545A
TW201810545A TW105121885A TW105121885A TW201810545A TW 201810545 A TW201810545 A TW 201810545A TW 105121885 A TW105121885 A TW 105121885A TW 105121885 A TW105121885 A TW 105121885A TW 201810545 A TW201810545 A TW 201810545A
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TW
Taiwan
Prior art keywords
insulating layer
item
electronic package
patent application
scope
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Application number
TW105121885A
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Chinese (zh)
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TWI581375B (en
Inventor
胡竹青
劉晉銘
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恆勁科技股份有限公司
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Priority to TW105121885A priority Critical patent/TWI581375B/en
Application granted granted Critical
Publication of TWI581375B publication Critical patent/TWI581375B/en
Publication of TW201810545A publication Critical patent/TW201810545A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Wire Bonding (AREA)

Abstract

Provided is an electronic package, comprising an insulating layer, an electronic element embedded in the insulating layer, a plurality of stopping blocks surrounding the electronic element, and a circuit structure disposed at the periphery of the stopping blocks, wherein the stopping blocks are disposed at a position between the electronic element and the circuit structure to thereby restrict the movement of the electronic element. The invention further provides a method for manufacturing the electronic package as described above.

Description

電子封裝件及其製法 Electronic package and manufacturing method thereof

本發明係有關一種封裝結構,尤指一種電子封裝件及其製法。 The invention relates to a packaging structure, in particular to an electronic package and a manufacturing method thereof.

目前半導體封裝技術包括打線式(Wire bonding)及覆晶式(Flip Chip)半導體封裝技術。 Current semiconductor packaging technologies include wire bonding and flip chip semiconductor packaging technologies.

參閱第1圖,習知打線式半導體封裝件1係使用一導線架10,其具有一晶片座100及形成於晶片座100周圍之複數導腳101,以將半導體晶片11藉由銀膠12黏接至該晶片座100上並以複數焊線13電性連接該半導體晶片11與該些導腳101,之後經由一封裝膠體14包覆該半導體晶片11、晶片座100、焊線13及局部導腳101。 Referring to FIG. 1, the conventional wire-bonded semiconductor package 1 uses a lead frame 10 having a wafer base 100 and a plurality of guide pins 101 formed around the wafer base 100 to adhere the semiconductor wafer 11 to the silver glue 12. Connected to the wafer holder 100 and electrically connecting the semiconductor wafer 11 and the guide pins 101 with a plurality of bonding wires 13, and then encapsulating the semiconductor wafer 11, the wafer holder 100, the bonding wires 13 and the partial guides through a packaging gel 14 Feet 101.

然而,該銀膠12係以點膠(Dispenser)方式形成,因而於該半導體晶片11黏接該銀膠12時,該半導體晶片11會稍微滑移,且於形成該封裝膠體14時,該半導體晶片11會受到該封裝膠體14的衝擊作用力,故於上述情況之發生後,該半導體晶片11會產生偏移(如第1’圖所示之虛線所代表之半導體晶片11),而此偏移量往往超出打線作業 中可校正焊線13之接點之範圍(焊線13由半導體晶片11打設至導腳101之作業需十分精確),亦即該焊線13未能正確地打設於該導腳101上,致使該焊線13容易發生折損、結合力降低、或斷裂而脫落等現象,進而影響應用該半導體封裝件1之電子產品之良率。 However, the silver glue 12 is formed by a Dispenser method. Therefore, when the semiconductor wafer 11 is bonded to the silver glue 12, the semiconductor wafer 11 may slip slightly, and when the packaging glue 14 is formed, the semiconductor The wafer 11 is subject to the impact force of the encapsulating gel 14, so after the above situation occurs, the semiconductor wafer 11 will be offset (such as the semiconductor wafer 11 represented by the dashed line shown in FIG. 1), and this bias The amount of shift often exceeds the line operation The range of contacts that can be corrected for the bonding wire 13 (the operation of bonding the bonding wire 13 from the semiconductor wafer 11 to the guide pin 101 needs to be very accurate), that is, the bonding wire 13 cannot be correctly set on the guide pin 101 This causes the bonding wire 13 to be easily broken, reduced in bonding force, or broken and peeled off, and then affects the yield of electronic products to which the semiconductor package 1 is applied.

因此,如何避免習知技術中之種種缺失,實已成為目前亟欲解決的課題。 Therefore, how to avoid all the shortcomings in the conventional technology has become an urgent problem to be solved.

鑑於上述習知技術之種種缺失,本發明提供一種電子封裝件,係包括:絕緣層;電子元件,係設於該絕緣層中;複數止擋塊,係設於該絕緣層中並圍繞於該電子元件周圍;以及線路結構,係設於該絕緣層中並位於該些止擋塊周圍,使該些止擋塊位於該電子元件與該線路結構之間。 In view of the various shortcomings of the above-mentioned conventional technologies, the present invention provides an electronic package including: an insulating layer; an electronic component provided in the insulating layer; a plurality of stoppers provided in the insulating layer and surrounding the The periphery of the electronic component and the circuit structure are arranged in the insulation layer and located around the stoppers, so that the stoppers are located between the electronic component and the circuit structure.

前述之電子封裝件中,復包括設於該絕緣層上並接觸該電子元件之散熱件。 The aforementioned electronic package further includes a heat sink disposed on the insulating layer and contacting the electronic component.

本發明亦提供一種電子封裝件之製法,係包括:提供一承載板,該承載板表面定義有相鄰之佈線區及置晶區;形成線路結構於該承載板之佈線區上,且形成複數止擋塊於該承載板之置晶區之邊緣上;設置電子元件於該承載板之置晶區上;以及形成絕緣層於該承載板上,以包覆該電子元件、止擋塊與線路結構。 The invention also provides a method for manufacturing an electronic package, comprising: providing a carrier board, the carrier board surface defining adjacent wiring areas and crystal placement areas; forming a circuit structure on the wiring area of the carrier board, and forming a plurality of The stopper is located on the edge of the crystallizing area of the carrier board; the electronic component is disposed on the crystallizing area of the carrier board; and an insulating layer is formed on the carrier board to cover the electronic component, the stopper and the circuit. structure.

前述之製法中,復包括於形成該絕緣層後,移除部分或全部該承載板。 In the foregoing manufacturing method, after forming the insulating layer, removing part or all of the carrier board.

前述之電子封裝件及其製法中,該電子元件係齊平(或 外露)該絕緣層之表面。 In the aforementioned electronic package and its manufacturing method, the electronic component is flush (or Exposed) the surface of the insulating layer.

前述之電子封裝件及其製法中,該止擋塊係齊平(或外露)於該絕緣層之表面。 In the aforementioned electronic package and its manufacturing method, the stopper is flush (or exposed) on the surface of the insulating layer.

前述之電子封裝件及其製法中,該線路結構係具有複數佈設於該承載板上(或於該止擋塊周圍)之導電線路及至少一佈設於該導電線路上之導電柱。例如,該導電線路係齊平(或外露於)該絕緣層之表面,且該導電柱係為銅柱體或焊錫柱體,而該導電柱係外露於該絕緣層之表面。 In the aforementioned electronic package and its manufacturing method, the circuit structure has a plurality of conductive circuits arranged on the carrier board (or around the stop block) and at least one conductive post arranged on the conductive circuit. For example, the conductive line is flush (or exposed) on the surface of the insulating layer, and the conductive pillar is a copper pillar or a solder pillar, and the conductive pillar is exposed on the surface of the insulating layer.

前述之電子封裝件及其製法中,復包括於形成該絕緣層前,該電子元件藉由複數焊線電性連接該線路結構。 In the aforementioned electronic package and its manufacturing method, before the formation of the insulating layer, the electronic component is electrically connected to the circuit structure through a plurality of bonding wires.

前述之電子封裝件及其製法中,復包括形成線路層於該絕緣層上,以令該線路層電性連接該電子元件與該線路結構。 In the foregoing electronic package and manufacturing method, the method further includes forming a circuit layer on the insulating layer, so that the circuit layer electrically connects the electronic component and the circuit structure.

前述之電子封裝件及其製法中,復包括於該絕緣層上形成複數電性連接該線路結構之導電元件。 In the foregoing electronic package and manufacturing method, the method further includes forming a plurality of conductive elements electrically connected to the circuit structure on the insulating layer.

由上可知,本發明之電子封裝件及其製法,主要藉由該止擋塊之設計,以限制該電子元件之移動範圍,故於該電子元件黏結於該承載板上及形成該絕緣層時,該電子元件不會過度偏移,亦即偏移量不會超出打線作業中可校正焊線之接點之範圍,避免發生如習知技術之焊線折損或脫落等現象,進而有效提升該電子封裝件之良率;再者,透過該止擋塊之設計可提高電子元件之放置位置及電性連接該電子元件之精度,避免習知製程需逐一識別對位而影響產出,進而實現大版面量產目的;另外,本發明可同時完 成電子元件載具製作與電子元件封裝製程,進而降低整體封裝成本及生產時間。 As can be seen from the above, the electronic package and its manufacturing method of the present invention mainly rely on the design of the stopper to limit the movement range of the electronic component, so when the electronic component is bonded to the carrier board and the insulation layer is formed , The electronic component will not be excessively shifted, that is, the amount of shift will not exceed the range of the correctable welding wire contact in the wire bonding operation, to avoid the occurrence of phenomena such as breakage or peeling of the welding wire of the conventional technology, thereby effectively improving the Yield of the electronic package; further, the design of the stopper can improve the placement of the electronic component and the accuracy of the electrical connection to the electronic component, avoiding the need to identify the alignment one by one in the conventional manufacturing process and affect the output, thereby achieving The purpose of large-scale production; in addition, the present invention can be completed at the same time It becomes an electronic component carrier manufacturing and electronic component packaging process, thereby reducing the overall packaging cost and production time.

1‧‧‧半導體封裝件 1‧‧‧ semiconductor package

10‧‧‧導線架 10‧‧‧ lead frame

100‧‧‧晶片座 100‧‧‧ Chip holder

101‧‧‧導腳 101‧‧‧Guide

11‧‧‧半導體晶片 11‧‧‧Semiconductor wafer

12‧‧‧銀膠 12‧‧‧Silver glue

13,23‧‧‧焊線 13,23‧‧‧Welding wire

14‧‧‧封裝膠體 14‧‧‧ encapsulated colloid

2,2’,3,3’,3”‧‧‧電子封裝件 2,2 ’, 3,3’, 3 ”‧‧‧electronic package

20‧‧‧承載板 20‧‧‧carrying plate

200‧‧‧散熱件 200‧‧‧ heat sink

21‧‧‧電子元件 21‧‧‧Electronic components

21a‧‧‧作用面 21a‧‧‧active surface

21b‧‧‧非作用面 21b‧‧‧ non-active surface

210‧‧‧電極墊 210‧‧‧ electrode pad

22‧‧‧止擋塊 22‧‧‧ Stop

24‧‧‧絕緣層 24‧‧‧ Insulation

24a‧‧‧第一表面 24a‧‧‧first surface

24b‧‧‧第二表面 24b‧‧‧Second surface

25‧‧‧線路結構 25‧‧‧Line Structure

25a‧‧‧導電線路 25a‧‧‧ conductive line

250‧‧‧打線墊 250‧‧‧Wired pad

251‧‧‧電性接觸墊 251‧‧‧electric contact pad

252,350‧‧‧導電跡線 252,350‧‧‧ conductive traces

26,26’‧‧‧導電柱 26,26’‧‧‧ conductive post

27,37‧‧‧導電元件 27, 37‧‧‧ conductive elements

33‧‧‧線路層 33‧‧‧Line layer

330,331‧‧‧導電盲孔 330,331‧‧‧Conductive blind hole

A‧‧‧置晶區 A‧‧‧Set crystal area

B‧‧‧佈線區 B‧‧‧ wiring area

第1圖係為習知半導體封裝件的剖視示意圖;第1’圖係為習知半導體封裝件的局部上視示意圖;第2A至2E圖係為本發明之電子封裝件之製法第一實施例之剖視示意圖;第2A’圖係為第2A圖之局部上視示意圖;第2D’圖係為第2D圖之局部上視示意圖;第2E’圖係為第2E圖之另一實施例之剖視示意圖;第3A至3C圖係為本發明之電子封裝件之製法第二實施例的剖視示意圖;以及第3C’及3C”圖係為第3C圖之其它不同實施例之剖視示意圖。 Fig. 1 is a schematic cross-sectional view of a conventional semiconductor package; Fig. 1 'is a schematic top-view schematic view of a conventional semiconductor package; Figs. 2A to 2E are the first implementation of the manufacturing method of the electronic package of the present invention; Figure 2A 'is a partial top view of Figure 2A; Figure 2D' is a partial top view of Figure 2D; Figure 2E 'is another embodiment of Figure 2E Figures 3A to 3C are schematic sectional views of the second embodiment of the method for manufacturing an electronic package of the present invention; and Figures 3C 'and 3C "are sectional views of other different embodiments of Figure 3C schematic diagram.

以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following describes the implementation of the present invention through specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術 內容得能涵蓋之範圍內。同時,本說明書中所引用之如“上”、“第一”、“第二”及“一”等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structures, proportions, sizes, etc. shown in the drawings in this specification are only used to match the content disclosed in the specification for the understanding and reading of those skilled in the art, and are not intended to limit the implementation of the present invention. The limited conditions are not technically significant. Any modification of the structure, change of the proportional relationship, or adjustment of the size should still fall within the scope of this invention without affecting the effects and goals that can be achieved by the present invention. Disclosed Technology The content must be within the scope. At the same time, the terms such as "upper", "first", "second", and "one" cited in this specification are only for the convenience of description, and are not intended to limit the scope of the present invention. Changes or adjustments in their relative relationships shall be considered to be the scope of the present invention without substantial changes in the technical content.

第2A至2E圖係為本發明之電子封裝件2之製法第一實施例之剖視示意圖。 Figures 2A to 2E are schematic cross-sectional views of the first embodiment of the manufacturing method of the electronic package 2 of the present invention.

如第2A及2B圖所示,提供一如金屬板之承載板20,該承載板20定義有相鄰之佈線區B及置晶區A,且形成一線路結構25於該承載板20之佈線區B上,並形成複數止擋塊22於該承載板20之置晶區A之邊緣上。 As shown in Figures 2A and 2B, a carrier plate 20 is provided, such as a metal plate. The carrier plate 20 defines adjacent wiring areas B and crystal placement areas A, and forms a wiring structure 25 on the wiring of the carrier plate 20. On the area B, a plurality of stop blocks 22 are formed on the edge of the crystal plate area A of the carrier plate 20.

於本實施例中,該佈線區B係環繞呈矩形之該置晶區A之周圍,且該些止擋塊22環繞該置晶區A之邊緣,如第2A’圖所示。 In this embodiment, the wiring area B surrounds the periphery of the crystal placement area A in a rectangular shape, and the stoppers 22 surround the edges of the crystal placement area A, as shown in FIG. 2A '.

再者,該線路結構25係具有複數導電線路25a及複數設於部分該導電線路25a上之導電柱26,其中,該導電線路25a具有複數打線墊250、複數電性接觸墊251及複數電性連接該打線墊250與該電性接觸墊251之導電跡線252(如第2A’圖所示),且各該導電柱26係對應設於各該電性接觸墊251上。 Furthermore, the circuit structure 25 has a plurality of conductive lines 25a and a plurality of conductive posts 26 provided on part of the conductive lines 25a. Among them, the conductive line 25a has a plurality of wiring pads 250, a plurality of electrical contact pads 251, and a plurality of electrical properties. The conductive traces 252 (as shown in FIG. 2A ′) connecting the wire bonding pad 250 and the electrical contact pad 251, and each of the conductive posts 26 are correspondingly disposed on each of the electrical contact pads 251.

又,藉由電鍍圖案化製程,該些止擋塊22與該些導電線路25a可一同製作,之後再以電鍍方式製作該導電柱26,該導電柱26係例如為銅柱體之金屬柱。 In addition, through the electroplating patterning process, the stoppers 22 and the conductive lines 25a can be fabricated together, and then the conductive pillar 26 is fabricated by electroplating. The conductive pillar 26 is a metal pillar such as a copper pillar.

如第2C圖所示,設置一電子元件21於該承載板20 之置晶區A上,使該些止擋塊22環繞該電子元件21之周圍。接著,進行打線製程,該電子元件21藉由複數焊線23電性連接該些打線墊250,進而使該電子元件21藉由該導電線路25a電性連接該導電柱26。 As shown in FIG. 2C, an electronic component 21 is disposed on the carrier plate 20. It is placed on the crystal region A so that the stop blocks 22 surround the periphery of the electronic component 21. Next, a wire bonding process is performed. The electronic component 21 is electrically connected to the wire bonding pads 250 through a plurality of bonding wires 23, so that the electronic component 21 is electrically connected to the conductive pillar 26 through the conductive line 25a.

於本實施例中,該電子元件21係為主動元件、被動元件或其二者組合,且該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。例如,該電子元件21係為半導體晶片,其具有相對之作用面21a與非作用面21b,該作用面21a具有複數電極墊210,且該焊線23電性連接該打線墊250與該電極墊210,而該電子元件21以其非作用面21b藉膠材(圖略)結合至該承載板20之置晶區A上。 In this embodiment, the electronic component 21 is an active component, a passive component, or a combination of both, and the active component is, for example, a semiconductor wafer, and the passive component is, for example, a resistor, a capacitor, and an inductor. For example, the electronic component 21 is a semiconductor wafer, which has opposite active surfaces 21a and non-active surfaces 21b, the active surface 21a has a plurality of electrode pads 210, and the bonding wires 23 are electrically connected to the wire bonding pads 250 and the electrode pads. 210, and the electronic component 21 is bonded to the crystal-receiving area A of the carrier plate 20 by using a non-active surface 21b by an adhesive material (not shown).

如第2D圖所示,形成一絕緣層24於該承載板20上,以包覆該電子元件21、止擋塊22、焊線23與線路結構25,其中,該絕緣層24具有結合至該承載板20上之第一表面24a及相對該第一表面24a之第二表面24b。 As shown in FIG. 2D, an insulating layer 24 is formed on the carrier board 20 to cover the electronic component 21, the stopper 22, the bonding wire 23, and the circuit structure 25, wherein the insulating layer 24 is bonded to the A first surface 24a on the carrier plate 20 and a second surface 24b opposite to the first surface 24a.

於本實施例中,該絕緣層24係如環氧樹脂之封裝膠體,其可用壓合(lamination)或模壓(molding)之方式形成於該承載板20上。 In this embodiment, the insulating layer 24 is an encapsulating gel such as epoxy resin, which can be formed on the carrier plate 20 by lamination or molding.

再者,藉由如研磨方式之整平製程,使該導電柱26之端面齊平該絕緣層24之第二表面24b,以令該導電柱26之端面外露於該絕緣層24之第二表面24b。應可理解地,亦可形成複數開孔於該絕緣層24之第二表面24b上,以令該導電柱26之端面外露於該些開孔。 Furthermore, the end surface of the conductive pillar 26 is made flush with the second surface 24b of the insulating layer 24 by a leveling process such as grinding, so that the end surface of the conductive pillar 26 is exposed on the second surface of the insulating layer 24 24b. It should be understood that a plurality of openings may be formed on the second surface 24b of the insulating layer 24 so that the end surfaces of the conductive pillars 26 are exposed to the openings.

又,該絕緣層24之第一表面24a係齊平該電子元件21之非作用面21b、止擋塊22之表面及該導電線路25a之表面。 In addition, the first surface 24a of the insulating layer 24 is flush with the non-active surface 21b of the electronic component 21, the surface of the stopper 22, and the surface of the conductive circuit 25a.

如第2E圖所示,蝕刻移除全部承載板20,以露出該絕緣層24之第一表面24a、該電子元件21之非作用面21b、止擋塊22、打線墊250及電性接觸墊251。 As shown in FIG. 2E, all the carrier plates 20 are removed by etching to expose the first surface 24a of the insulating layer 24, the non-active surface 21b of the electronic component 21, the stopper 22, the wire bonding pad 250, and the electrical contact pad. 251.

於本實施例中,形成複數如銲球之導電元件27於該絕緣層24之第二表面24b上。具體地,該些導電元件27係結合於該些導電柱26之端面上以電性連接該些電性接觸墊251。 In this embodiment, a plurality of conductive elements 27 such as solder balls are formed on the second surface 24 b of the insulating layer 24. Specifically, the conductive elements 27 are coupled to the end surfaces of the conductive pillars 26 to electrically connect the electrical contact pads 251.

再者,於另一實施例中,如第2E’圖所示,僅蝕刻移除部分承載板20,以保留位於該電子元件21之非作用面21b上之部分該承載板20(亦可選擇性地保留位於該電子元件21之非作用面21b及該止擋塊22上之部分該承載板20,即保留位於該承載板20之置晶區A上之部分該承載板20),俾供作為散熱件200。 Furthermore, in another embodiment, as shown in FIG. 2E ′, only a part of the carrier board 20 is removed by etching to retain a part of the carrier board 20 on the non-active surface 21 b of the electronic component 21 (optional) To retain part of the carrier plate 20 on the non-active surface 21b of the electronic component 21 and the stopper block 22, that is, to retain part of the carrier plate 20 on the crystal placement area A of the carrier plate 20) As a heat sink 200.

又,如第2E’圖所示,於第2B圖之製程中,該導電柱26’可為焊錫柱體。 In addition, as shown in FIG. 2E ', in the process of FIG. 2B, the conductive pillar 26' may be a solder pillar.

第3A至3C圖係為本發明之電子封裝件3之製法第二實施例之剖視示意圖。本實施例與第一實施例之差異在於電子元件與線路結構之電性連接方式,而其它製程大致相同,故以下詳細說明相異處,而不再贅述相同處。 3A to 3C are schematic sectional views of the second embodiment of the manufacturing method of the electronic package 3 of the present invention. The difference between this embodiment and the first embodiment lies in the electrical connection method of the electronic components and the circuit structure, and other processes are substantially the same, so the detailed descriptions below are different, and the same points are not described again.

如第3A圖所示,係接續於第2B圖之製程,惟不進行打線作業,於設置該電子元件21後,直接形成該絕緣層 24。 As shown in FIG. 3A, the process is continued from FIG. 2B, but no wire bonding is performed. After the electronic component 21 is provided, the insulation layer is directly formed. twenty four.

於本實施例中,該導電線路25a具有複數電性連接該電性接觸墊251之導電跡線350,而未形成有打線墊,並令該線路結構25之導電柱26之端面外露出該絕緣層24。 In this embodiment, the conductive line 25a has a plurality of conductive traces 350 electrically connected to the electrical contact pad 251 without a wire bonding pad, and the end of the conductive post 26 of the line structure 25 is exposed to the insulation. Layer 24.

如第3B圖所示,形成一線路層33於該絕緣層24之第二表面24b上,且該線路層33電性連接該電子元件21與該線路結構25之導電柱26。 As shown in FIG. 3B, a circuit layer 33 is formed on the second surface 24 b of the insulation layer 24, and the circuit layer 33 is electrically connected to the electronic component 21 and the conductive pillar 26 of the circuit structure 25.

於本實施例中,該線路層33具有複數延伸於該絕緣層24中之導電盲孔330,以電性連接該電子元件21之電極墊210。 In this embodiment, the circuit layer 33 has a plurality of conductive blind holes 330 extending in the insulating layer 24 to electrically connect the electrode pads 210 of the electronic component 21.

如第3C圖所示,蝕刻移除全部承載板20,以露出該絕緣層24之第一表面24a、該電子元件21之非作用面21b、止擋塊22、導電跡線350及電性接觸墊251。 As shown in FIG. 3C, all the carrier plates 20 are removed by etching to expose the first surface 24a of the insulating layer 24, the non-active surface 21b of the electronic component 21, the stopper 22, the conductive trace 350, and electrical contact. Pad 251.

於本實施例中,復可形成複數如銲球之導電元件37於該絕緣層24之第一表面24a上。具體地,該些導電元件37係結合於該些電性接觸墊251之外露表面上以電性連接該些導電柱26。 In this embodiment, a plurality of conductive elements 37 such as solder balls are formed on the first surface 24 a of the insulating layer 24. Specifically, the conductive elements 37 are coupled to the exposed surfaces of the electrical contact pads 251 to electrically connect the conductive pillars 26.

再者,如第3C’圖所示,若該絕緣層24之第二表面24b高於該導電柱26之端面(即該絕緣層24覆蓋住該導電柱26),則於第3B圖之製程中,該線路層33可具有複數延伸於該絕緣層24中之另一導電盲孔331,以電性連接該導電柱26。 Furthermore, as shown in FIG. 3C ′, if the second surface 24 b of the insulating layer 24 is higher than the end surface of the conductive pillar 26 (that is, the insulating layer 24 covers the conductive pillar 26), then the process in FIG. 3B The circuit layer 33 may have another conductive blind hole 331 extending in the insulating layer 24 to electrically connect the conductive pillar 26.

或者,如第3C”圖所示,若該絕緣層24之第二表面24b齊平該電子元件21之作用面21a及該導電柱26之端 面,則於第3B圖之製程中,該線路層33可直接電性連接該電極墊210及該導電柱26,而不需形成導電盲孔。 Alternatively, as shown in FIG. 3C ”, if the second surface 24b of the insulating layer 24 is flush with the active surface 21a of the electronic component 21 and the end of the conductive pillar 26 In the process of FIG. 3B, the circuit layer 33 can directly and electrically connect the electrode pad 210 and the conductive pillar 26 without forming a conductive blind hole.

另外,於該電子封裝件3,3’,3”中,應可理解地,可於該電子元件21之非作用面21b上接置一散熱件(圖略)。 In addition, in the electronic package 3, 3 ', 3 ", it should be understood that a non-active surface 21b of the electronic component 21 can be connected with a heat sink (not shown).

本發明之製法係藉由止擋塊22之設計,以限制該電子元件21之位置,如第2D’圖所示,故於該電子元件21黏結於該承載板20上及形成該絕緣層24時,該電子元件21會受該止擋塊22阻擋而不會過度偏移,亦即偏移量不會超出打線作業中可校正焊線23之接點之範圍、或超出該線路層33之定位範圍,避免發生焊線23折損或脫落及線路層33未接觸該電極墊210等現象,進而有效提升該電子封裝件2,2’,3,3’,3”之良率。 In the manufacturing method of the present invention, the position of the electronic component 21 is restricted by the design of the stopper 22, as shown in FIG. 2D ′. Therefore, the electronic component 21 is adhered to the carrier plate 20 and the insulating layer 24 is formed. At this time, the electronic component 21 will be blocked by the stopper 22 without being excessively shifted, that is, the shift amount will not exceed the range of the contact of the correctable bonding wire 23 during the wire bonding operation, or exceed the range of the wiring layer 33. The positioning range avoids the occurrence of breakage or peeling of the bonding wire 23 and the non-contact of the circuit layer 33 with the electrode pad 210, thereby effectively improving the yield of the electronic package 2,2 ', 3,3', 3 ".

本發明提供一種電子封裝件2,2’,3,3’,3”,係包括:一絕緣層24、一嵌埋於該絕緣層24中之電子元件21、複數止擋塊22以及一線路結構25。 The present invention provides an electronic package 2,2 ', 3,3', 3 ", which includes: an insulating layer 24, an electronic component 21 embedded in the insulating layer 24, a plurality of stoppers 22, and a circuit. Structure 25.

所述之止擋塊22係嵌埋於該絕緣層24中並圍繞於該電子元件21周圍。 The stopper 22 is embedded in the insulation layer 24 and surrounds the electronic component 21.

所述之線路結構25係設於該絕緣層24中並位於該些止擋塊22周圍,使該些止擋塊22位於該電子元件21與該線路結構25之間。 The circuit structure 25 is disposed in the insulation layer 24 and located around the stop blocks 22, so that the stop blocks 22 are located between the electronic component 21 and the circuit structure 25.

於一實施例中,該電子元件21之非作用面21b係外露於該絕緣層24之第一表面24a,且該電子封裝件3”之電子元件21之作用面21a係外露於該絕緣層24之第二表面24b。 In one embodiment, the non-active surface 21b of the electronic component 21 is exposed from the first surface 24a of the insulating layer 24, and the active surface 21a of the electronic component 21 of the electronic package 3 "is exposed from the insulating layer 24. Of the second surface 24b.

於一實施例之電子封裝件2,2’,3,3’,3”中,該止擋塊22係外露於該絕緣層24之第一表面24a。 In the electronic package 2, 2 ′, 3, 3 ′, 3 ″ of an embodiment, the stopper 22 is exposed on the first surface 24 a of the insulating layer 24.

於一實施例中,該線路結構25係具有複數佈設於該些止擋塊22周圍之導電線路25a及複數佈設於該導電線路25a上之導電柱26,26’。例如,該導電線路25a係外露於該絕緣層24之第一表面24a,且該導電柱26,26’係為銅柱體或焊錫柱體,其外露於該絕緣層24之第二表面24b。 In one embodiment, the circuit structure 25 has a plurality of conductive lines 25a arranged around the stoppers 22 and a plurality of conductive posts 26, 26 'arranged on the conductive lines 25a. For example, the conductive line 25a is exposed on the first surface 24a of the insulating layer 24, and the conductive pillars 26, 26 'are copper pillars or solder pillars, which are exposed on the second surface 24b of the insulating layer 24.

於一實施例之電子封裝件2,2’中,該電子元件21藉由複數焊線23電性連接該線路結構25。 In the electronic package 2, 2 ′ of an embodiment, the electronic component 21 is electrically connected to the circuit structure 25 through a plurality of bonding wires 23.

於一實施例中,該電子封裝件3,3’,3”復包括一形成於該絕緣層24之第二表面24b上的線路層33,其電性連接該電子元件21與該線路結構25。 In one embodiment, the electronic package 3, 3 ', 3 "includes a circuit layer 33 formed on the second surface 24b of the insulating layer 24, and is electrically connected to the electronic component 21 and the circuit structure 25. .

於一實施例中,該電子封裝件2’復包括一設於該絕緣層24之第一表面24a上並接觸該電子元件21的散熱件200。 In one embodiment, the electronic package 2 'includes a heat sink 200 disposed on the first surface 24a of the insulating layer 24 and contacting the electronic component 21.

於一實施例中,該電子封裝件3,3’,3”復包括形成於該絕緣層24之第一表面24a上的複數導電元件37。或者,該電子封裝件2,2’復包括形成於該絕緣層24之第二表面24b上的複數導電元件27。 In one embodiment, the electronic package 3, 3 ', 3 "includes a plurality of conductive elements 37 formed on the first surface 24a of the insulating layer 24. Alternatively, the electronic package 2, 2' includes a formation A plurality of conductive elements 27 on the second surface 24 b of the insulating layer 24.

綜上所述,本發明之封裝基板及其製法,係藉由該止擋塊之設計,以於形成該絕緣層時,該止擋塊會限制該電子元件之移動範圍,使該電子元件不會過度偏移,因而不會發生如習知技術所述之缺失;再者,透過該止擋塊之設計可提高電子元件之放置位置及電性連接該電子元件之精 度,避免習知製程需逐一識別對位而影響產出,進而實現大版面量產目的;另外,本發明可同時完成電子元件載具製作與電子元件封裝製程,進而降低整體封裝成本及生產時間。 In summary, the package substrate and the manufacturing method thereof of the present invention are designed by the stopper, so that when the insulating layer is formed, the stopper will limit the moving range of the electronic component, so that the electronic component does not It will be excessively shifted, so that it will not be missing as described in the conventional technology; further, the design of the stopper can improve the placement of the electronic component and the precision of the electrical connection to the electronic component. It can avoid the need to recognize the alignment one by one in the conventional manufacturing process to affect the output, thereby achieving the goal of mass production. In addition, the invention can simultaneously complete the manufacturing process of electronic component carriers and the packaging process of electronic components, thereby reducing the overall packaging cost and production time. .

上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are used to exemplify the principle of the present invention and its effects, but not to limit the present invention. Anyone skilled in the art can modify the above embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be listed in the scope of patent application described later.

2‧‧‧電子封裝件 2‧‧‧electronic package

21‧‧‧電子元件 21‧‧‧Electronic components

21b‧‧‧非作用面 21b‧‧‧ non-active surface

22‧‧‧止擋塊 22‧‧‧ Stop

23‧‧‧焊線 23‧‧‧ Welding Wire

24‧‧‧絕緣層 24‧‧‧ Insulation

24a‧‧‧第一表面 24a‧‧‧first surface

24b‧‧‧第二表面 24b‧‧‧Second surface

25‧‧‧線路結構 25‧‧‧Line Structure

25a‧‧‧導電線路 25a‧‧‧ conductive line

250‧‧‧打線墊 250‧‧‧Wired pad

251‧‧‧電性接觸墊 251‧‧‧electric contact pad

26‧‧‧導電柱 26‧‧‧ conductive post

27‧‧‧導電元件 27‧‧‧ conductive element

Claims (22)

一種電子封裝件,係包括:絕緣層;電子元件,係設於該絕緣層中;複數止擋塊,係形成於該絕緣層中並圍繞該電子元件周圍;以及線路結構,係形成於該絕緣層中並位於該些止擋塊周圍,以令該些止擋塊位於該電子元件與該線路結構之間。 An electronic package includes: an insulating layer; an electronic component provided in the insulating layer; a plurality of stoppers formed in the insulating layer and surrounding the electronic component; and a circuit structure formed in the insulation The layer is located in the layer and around the stop blocks, so that the stop blocks are located between the electronic component and the circuit structure. 如申請專利範圍第1項所述之電子封裝件,其中,該電子元件係外露於該絕緣層之表面。 The electronic package according to item 1 of the scope of patent application, wherein the electronic component is exposed on the surface of the insulating layer. 如申請專利範圍第1項所述之電子封裝件,其中,該止擋塊係外露於該絕緣層之表面。 The electronic package according to item 1 of the scope of patent application, wherein the stopper is exposed on the surface of the insulating layer. 如申請專利範圍第1項所述之電子封裝件,其中,該線路結構係具有複數佈設於該止擋塊周圍之導電線路及至少一佈設於該導電線路上之導電柱。 The electronic package according to item 1 of the scope of patent application, wherein the circuit structure has a plurality of conductive lines arranged around the stopper and at least one conductive post arranged on the conductive lines. 如申請專利範圍第4項所述之電子封裝件,其中,該導電線路係外露於該絕緣層之表面。 The electronic package according to item 4 of the scope of patent application, wherein the conductive circuit is exposed on the surface of the insulating layer. 如申請專利範圍第4項所述之電子封裝件,其中,該導電柱係為銅柱體或焊錫柱體。 The electronic package according to item 4 of the scope of patent application, wherein the conductive pillar is a copper pillar or a solder pillar. 如申請專利範圍第4項所述之電子封裝件,其中,該導電柱係外露於該絕緣層之表面。 The electronic package according to item 4 of the scope of patent application, wherein the conductive pillar is exposed on the surface of the insulating layer. 如申請專利範圍第1項所述之電子封裝件,其中,該電子元件係藉由複數焊線電性連接該線路結構。 The electronic package according to item 1 of the scope of patent application, wherein the electronic component is electrically connected to the circuit structure by a plurality of bonding wires. 如申請專利範圍第1項所述之電子封裝件,復包括形成於該絕緣層上並電性連接該電子元件與該線路結構之線路層。 The electronic package described in item 1 of the scope of the patent application, includes a circuit layer formed on the insulation layer and electrically connecting the electronic component and the circuit structure. 如申請專利範圍第1項所述之電子封裝件,復包括設於該絕緣層上並接觸該電子元件之散熱件。 The electronic package described in item 1 of the scope of the patent application, further includes a heat sink provided on the insulation layer and contacting the electronic component. 如申請專利範圍第1項所述之電子封裝件,復包括形成於該絕緣層上且電性連接該線路結構之複數導電元件。 The electronic package described in item 1 of the scope of the patent application includes a plurality of conductive elements formed on the insulating layer and electrically connected to the circuit structure. 一種電子封裝件之製法,係包括:提供一承載板,其中該承載板表面定義有相鄰之佈線區及置晶區;形成線路結構於該承載板之佈線區上,且形成複數止擋塊於該承載板之置晶區之邊緣上;設置電子元件於該承載板之置晶區上;以及形成絕緣層於該承載板上,以包覆該電子元件、止擋塊與線路結構。 An electronic package manufacturing method includes: providing a carrier board, wherein the carrier board surface defines adjacent wiring areas and crystal placement areas; forming a circuit structure on the wiring area of the carrier board, and forming a plurality of stop blocks On the edge of the crystal-receiving region of the carrier board; placing electronic components on the crystal-receiving region of the carrier board; and forming an insulating layer on the carrier board to cover the electronic element, the stopper and the circuit structure. 如申請專利範圍第12項所述之電子封裝件之製法,其中,該電子元件之表面係齊平該絕緣層之表面。 According to the manufacturing method of the electronic package described in item 12 of the patent application scope, wherein the surface of the electronic component is flush with the surface of the insulating layer. 如申請專利範圍第12項所述之電子封裝件之製法,其中,該止擋塊之表面係齊平該絕緣層之表面。 According to the manufacturing method of the electronic package described in item 12 of the patent application scope, wherein the surface of the stopper is flush with the surface of the insulating layer. 如申請專利範圍第12項所述之電子封裝件之製法,其中,該線路結構係具有複數佈設於該承載板上之導電線路及至少一佈設於該導電線路上之導電柱。 According to the manufacturing method of the electronic package described in item 12 of the patent application scope, wherein the circuit structure has a plurality of conductive lines arranged on the carrier board and at least one conductive post arranged on the conductive lines. 如申請專利範圍第15項所述之電子封裝件之製法,其中,該導電線路之表面係齊平該絕緣層之表面。 According to the manufacturing method of the electronic package described in item 15 of the scope of patent application, wherein the surface of the conductive circuit is flush with the surface of the insulating layer. 如申請專利範圍第15項所述之電子封裝件之製法,其中,該導電柱係為銅柱體或焊錫柱體。 According to the method for manufacturing an electronic package described in item 15 of the scope of the patent application, wherein the conductive pillar is a copper pillar or a solder pillar. 如申請專利範圍第15項所述之電子封裝件之製法,其中,該導電柱係外露於該絕緣層之表面。 According to the manufacturing method of the electronic package described in item 15 of the scope of the patent application, wherein the conductive pillar is exposed on the surface of the insulating layer. 如申請專利範圍第12項所述之電子封裝件之製法,復包括於形成該絕緣層前,令該電子元件藉由複數焊線電性連接該線路結構。 According to the manufacturing method of the electronic package described in item 12 of the scope of the patent application, before the formation of the insulating layer, the electronic component is electrically connected to the circuit structure through a plurality of bonding wires. 如申請專利範圍第12項所述之電子封裝件之製法,復包括形成線路層於該絕緣層上,以令該線路層電性連接該電子元件與該線路結構。 According to the manufacturing method of the electronic package described in item 12 of the scope of the patent application, the method further includes forming a circuit layer on the insulating layer, so that the circuit layer electrically connects the electronic component and the circuit structure. 如申請專利範圍第12項所述之電子封裝件之製法,復包括於形成該絕緣層後,移除部分或全部該承載板。 According to the manufacturing method of the electronic package described in item 12 of the scope of the patent application, the method further includes removing part or all of the carrier board after forming the insulating layer. 如申請專利範圍第12項所述之電子封裝件之製法,復包括於該絕緣層上形成複數電性連接該線路結構之導電元件。 According to the manufacturing method of the electronic package described in item 12 of the scope of patent application, the method further includes forming a plurality of conductive elements electrically connected to the circuit structure on the insulating layer.
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