TWI493762B - Two - dimensional folded Hall - sensing element - Google Patents

Description

Two-dimensional folding Hall sensing component

The invention relates to a magnetic field sensing component, in particular to a two-dimensional folded Hall sensing component integrating the lateral magnetoelectric crystal and the magnetoresistance.

Human research Hall sensing components have a long history, and manufacturers that can use IC process technology to make Hall sensing components and their readout circuits are already innumerable. The reason is that Hall sensing components With simple structure, easy mass production, low cost and other characteristics, it is universally accepted; in addition, Hall sensing components are widely used in applications ranging from the most basic magnetic field sensing, rotational speed measurement and positioning, to touch. Touch sensing, etc. are all areas of application, which shows the wide range of applications.

In general, there are two main reasons for evaluating the performance of Hall sensing components. The first one is current-dependent magnetic sensitivity S _RI , which is defined as The unit is V/A. T (volt/ampere.tesla); wherein I _bias (A) represents a bias current, and ΔV _out (V) and ΔB (T) represent a Hall voltage and a magnetic flux density respectively measured by magnetic induction; The second is the magnetic sensitivity S, which is defined as In addition, the nonlinear error NLE is also an important basis for evaluation, which is defined as Where ΔV _out represents the measured Hall voltage, and ΔV ⁽⁰⁾ _out is the average value of the voltage obtained by the minimum error approximation.

However, although the magnetic effects of conventional Hall sensing elements include magnetoresistance, vertical magnetoresistance, base-type magneto-optical crystal, lateral-type magneto-optical crystal, and vertical magneto-optical crystal, and are affected by individual and mutual magnetic effects, However, the conventional components still have problems such as low magnetic sensitivity, poor linearity, and excessive cross-coupling voltage interference. Whether it is used as a current sensor to detect current signals or other industrial control related applications, there is room for improvement. .

In view of this, the present inventors have specifically reviewed the above problems, and expect to provide a two-dimensional folding Hall sensing element that integrates the effects of a lateral magneto-optical crystal and a magnetoresistance. The mind research and design system are used to supply the consumer and use it as the creative motive for the invention.

The main object of the present invention is to provide a two-dimensional folding Hall sensing component that reviews and innovates the problems of conventional Hall sensing components.

To achieve the above object, the two-dimensional folded Hall sensing device of the present invention is fabricated in a standard 0.35 micron CMOS process; an impurity region is first formed on a semiconductor substrate, and a first sensing portion is disposed in the impurity region. And a second sensing portion; wherein the first sensing portion is provided with a first central terminal, and four first control terminals extend from the first central terminal in four vertical directions on the plane, the first control Each of the terminals is connected to a first sensing terminal; the second sensing portion is symmetric with the first sensing portion and is disposed on the side of the first sensing portion in a folded manner; the second sensing portion is also provided with a second portion. a central terminal, and four second control terminals extending from the second central terminal in four vertical directions on the plane, and a second control terminal is respectively connected with a second sensing terminal; wherein the second sensing terminal corresponds to The first sensing terminal is electrically coupled to the first sensing terminal.

Preferably, the two-dimensional folding Hall sensing component has a guard ring on each of the first sensing portion and the second sensing portion, and the protection ring is a P-type high-concentration impurity. To reduce the cross-coupling voltage.

Preferably, the two-dimensional folded Hall sensing element has a guard ring on the periphery of the impurity region, and the guard ring is a P-type high-concentration impurity for reducing the cross-coupling voltage.

The two-dimensional folding Hall sensing element as described above preferably has a retracting function for concentrating the carrier concentration and improving the sensitivity of the element.

As described above, the two-dimensional folded Hall sensing element preferably has a semiconductor substrate of a P-type semiconductor substrate and is electrically connected to a lowest potential.

Preferably, the impurity region is an N-type well as the two-dimensional folded Hall sensing element as described above.

In the two-dimensional folding Hall sensing element as described above, it is preferable that the first central terminal and the second central terminal are N-type high-concentration impurity regions.

In the two-dimensional folding Hall sensing element as described above, it is preferable that the first sensing terminal and the second sensing terminal are N-type high-concentration impurity regions.

In the two-dimensional folding Hall sensing element as described above, it is preferable that the first control terminal and the second control terminal are P-type high-concentration impurity regions.

By the above means, the present invention reduces the size of the component by the folded structure and integrates the effects of the transverse magneto-optical crystal and the magnetoresistance to improve the current-dependent magnetic sensitivity and improve the nonlinear problem; in addition, the P-type high-concentration impurity protection ring is used. The cross-coupling voltage is reduced, so that the Hall sensing element has no hysteresis during operation and is more practical. Compared with the conventional Hall sensing element, the invention is more novel and progressive.

100‧‧‧Two-dimensional folding Hall sensing element

A, A’‧‧‧ points

B‧‧‧P type semiconductor substrate

B _Y ‧‧‧Y-axis magnetic field direction

W‧‧‧N well

1‧‧‧First Sensing Department

C _in ‧‧‧first central terminal

C ₁₁ , C ₁₂ , C ₁₃ , C ₁₄ ‧ ‧ first control terminal

S ₁₁ , S ₁₂ , S ₁₃ , S ₁₄ ‧ ‧ first sensing terminal

2‧‧‧Second Sensing Department

C _out ‧‧‧second central terminal

C ₂₁ , C ₂₂ , C ₂₃ , C ₂₄ ‧ ‧ second control terminal

S ₂₁ , S ₂₂ , S ₂₃ , S ₂₄ ‧‧‧second sensing terminal

G ₁ , G ₂ , G‧‧‧ protection rings

F _Z ‧‧‧Z-axis hole stress direction

I _X ‧‧‧X-axis bias current direction

LMT-11, LMT-12, LMT-21, LMT-22‧‧‧ transverse magnetoelectric crystal

The first figure is a perspective view of the structure of the present invention.

The second drawing is a schematic view of the operation of the first embodiment of the present invention.

The third figure is a schematic view of the operation of the second embodiment of the present invention.

The fourth figure is a schematic view of the operation of the third embodiment of the present invention.

The fifth drawing is a plan view of the structure of the present invention.

In order to facilitate the review of the contents of the present invention and the achievable functions, a detailed description will be given in conjunction with the drawings. The detailed description is as follows: Please refer to the first figure, which is a perspective view showing the structure of the present invention, such as As shown in the figure, the two-dimensional folded Hall sensing device 100 of the present invention is fabricated in a standard 0.35 micron CMOS process; first, an N-type well W is formed on a P-type semiconductor substrate B, and then on an N-type well W. Two mutually symmetric and folded sensing portions are provided, which are all cross-type Hall sensing elements. The first sensing portion 1 is provided with a first central terminal C _in , and four first control terminals C ₁₁ , C ₁₂ , C ₁₃ extend from the first central terminal C _in four vertical directions on the plane. And C ₁₄ , and a first control terminal (C ₁₁ , C ₁₂ , C ₁₃ or C ₁₄ ) is respectively connected with a first sensing terminal (S ₁₁ , S ₁₂ , S ₁₃ or S ₁₄ ); the second sensing part 2 Is symmetrical to the first sensing portion 1 and disposed on the side of the first sensing portion 1 in a folded manner; the second sensing portion 2 is also provided with a second central terminal C _out and from the second center The terminal C _out extends four vertical control terminals C ₂₁ , C ₂₂ , C ₂₃ , C ₂₄ in four vertical directions, and a second control terminal (C ₂₁ , C ₂₂ , C ₂₃ or C ₂₄ ) Connected to a second sensing terminal (S ₂₁ , S ₂₂ , S ₂₃ or S ₂₄ ); wherein the second sensing terminals S ₂₁ -S ₂₄ correspond to the first sensing terminals S ₁₁ -S ₁₄ and are electrically coupled Connected to the first sensing terminals S ₁₁ ~S ₁₄ .

As described above, the first sensing portion 1, the second sensing portion 2, and the periphery of the N-type well W of the present invention are each provided with a guard ring G ₁ , G ₂ , G, and the guard ring G ₁ , G ₂ and G are P-type high-concentration impurities to reduce the cross-coupling voltage; and the guard ring has a retracting function, which can concentrate the carrier concentration and improve the sensitivity of the component. Furthermore, the first central terminal C _in , the second central terminal C _out , the first sensing terminals S ₁₁ -S ₁₄ and the second sensing terminals S ₂₁ -S ₂₄ are N-type high-concentration impurity regions, and the first control terminal C ₁₁ to C ₁₄ and the second control terminal C ₂₁ to C ₂₄ are P-type high-concentration impurity regions.

Please refer to the first and second figures at the same time, wherein the second figure shows the action diagram of the first embodiment of the present invention, which is a sectional structure extending in the X direction with reference to two points A and A' of the first figure. As shown, the first control terminals C ₁₁ -C ₁₄ , the second control terminals C ₂₁ -C _{24 ,} and the P-type semiconductor substrate B are electrically coupled to a minimum negative voltage terminal (so-called ground) to stop The component PN junction is offset, and the bias current is input by the first central terminal C _{in and} output by the second central terminal C _out ; when the magnetic field is zero, the first sensing terminals S ₁₁ -S ₁₄ operate at the same The potential; if a magnetic field is applied to the surface of the Hall element, a Hall voltage V _H is generated between the first sensing terminals S ₁₁ and S ₁₂ .

As described above, the operation of the first embodiment of the present invention mainly describes the driving of a majority carrier by the Lorentz force when it is used as a magnetoresistance, and in the first embodiment of the present invention, the majority carrier is electrically a hole; when a non-zero magnetic field, that is, the Y-axis magnetic field direction B _{Y is} applied, the generated Lorentz force causes the current of the first sensing portion 1 to flow from the first central terminal C _in toward the first sensing terminal S ₁₁ and S ₁₂ pushing; wherein, the hole flow toward the first sensing terminal S ₁₁ causes the carrier trajectory to be shortened due to the action of the Lorentz force, and exhibits a cumulative mode; and the hole flow toward the first sensing terminal S ₁₂ The release mode is presented because the carrier track lengthens; in contrast, the hole flow of the second sensing portion 2 is pushed by the second sensing terminals S ₂₁ and S ₂₂ toward the second central terminal C _out , and the second sensing terminal S ₂₁ is The second sensing terminal S ₂₂ is in a release mode, and the first sensing terminal S is in the first sensing terminal S ₁₁ of the first sensing portion 1 , and the first sensing terminal S is provided with a rapid accumulation and a slow release. ₁₁ generates a positive potential; and a second sensor sensing a second portion ₂₂ of the terminal S 2 will be electrically Fast and slow release of the accumulated operation, causing the second sense terminals S ₂₂ generates a negative potential, the potential of the positive and negative reversed position and vice versa; by the above-described operation principle, Hall sensors can only achieve a good linearity between the applied magnetic field and induced voltage Relationship, which also suppresses the generation of hysteresis offset voltage.

Please refer to the first and third figures at the same time, wherein the third figure shows the action diagram of the second embodiment of the present invention, which is also a sectional structure extending in the X direction with reference to the two points A and A' of the first figure. As shown, the first control terminals C ₁₁ -C ₁₄ , the second control terminals C ₂₁ -C ₂₄ , the first central terminal C _in and the second central terminal C _{out are} electrically coupled to a positive voltage, and The P-type semiconductor substrate B is electrically coupled to a lowest negative voltage terminal (so-called ground); the two-dimensional folded Hall sensing device 100 of the present invention can form four NPN bipolar connections in the X and Y directions, respectively. The lateral transverse magneto-optical crystals all operate within the active region.

As described above, the second embodiment of the present invention mainly describes the principle of operation as a lateral magnetoelectric crystal. In the X-direction transverse magneto-optical crystal LMT-11 in this embodiment, if the magnetic field, that is, the Y-axis magnetic field direction B _Y is zero, , majority carriers (holes) from the first line C _in the central terminal sent, after passing through the first control terminal C ₁₁ is accumulated in the first sensing terminal S _11, and the transverse magnetic crystal LMT-12, LMT-21, LMT- 22 also has the same principle of operation, the Hall voltage induced at this time is zero; if a non-zero magnetic field, that is, the Y-axis magnetic field direction B _{Y is} applied to the surface of the component, the Lorentz force will be acted upon by the majority carrier The imbalance phenomenon occurs. At this time, the carrier trajectories of the lateral magneto-optical crystals LMT-11 and LMT-21 become shorter, and the positive electric potential of the first sensing terminals S ₁₁ and S ₂₁ is strengthened to generate a positive potential. The carrier traces of LMT-12 and LMT-22 become longer, slowing down the potential accumulation of the second sensing terminals S ₁₂ and S ₂₂ and generating a negative potential. The positive and negative potential difference is the Hall induced voltage in the X direction, which is the magnetic field. The Y-axis magnetic field direction B _Y is proportional, and the same applies to the Y-direction Hall induction Pressure.

Please refer to the first and fourth figures at the same time, wherein the fourth figure shows the action diagram of the third embodiment of the present invention, which is also a sectional structure extending in the X direction with reference to the two points A and A' of the first figure. . As shown, it includes a first control terminal C ₁₁ ~ C ₁₄ , a second control terminal C ₂₁ ~ C ₂₄ and a first central terminal C _in electrically coupled to a positive voltage, and a second central terminal C _out Electrically coupled to a minimum negative voltage terminal (so-called grounding); the third embodiment of the present invention mainly describes the operation principle of the magnetoresistance and the transverse magneto-optical crystal mixing, since the first central terminal C _in is electrically coupled to a positive voltage, and the second central terminal C _out is electrically coupled to the negative voltage terminal (so-called ground), the operating principle of the magnetic resistance is as described in the first embodiment; and the operating principle of the lateral magnetocrystalline crystal is also like the second In the embodiment, the two-dimensional folded Hall sensing device 100 of the present invention can form four NPN bipolar junction transverse magnetrons in the X and Y directions, respectively, but the difference lies in the X-direction transverse magneto-optical crystal LMT-21. And the LMT-22 system works in the saturation region, and the same applies to the transverse magneto-optical crystal in the Y direction. Table 1 shows the potential connection and operation principle of the first to third embodiments of the present invention.

Please refer to the first and fifth figures at the same time, and the fifth figure shows the top view of the structure of the present invention. As shown in the figure, under the structural design of the present invention, the conductive path and the effective length of the Hall sensing element are successfully miniaturized, and it is indeed possible to reduce the size of the element by the design of the folded-fold structure, and use the p+ protection ring. (Protection ring G ₁ , G ₂ , G) to reduce the cross-coupling voltage; in addition, the p+ guard ring has a retracting function for concentrating the carrier concentration and improving the sensitivity of the magnetic element.

The experimental results of the present invention show that the optimum current-dependent magnetic sensitivity of the integrated transverse magneto-optical crystal and the magnetoresistance is five times and seven times higher than the current-dependent magnetic sensitivity of a single transverse magneto-optical crystal or magnetoresistance; secondly, the cross-coupling voltage is approximately For one-fifth of the measured Hall voltage, this indicates that the cross-coupling voltage is predictable and easily eliminated. In addition, since the linearity of the magnetoresistance and the lateral magneto-optical crystal are not ideal, especially when the bias current is less than 20 mA or more than 80 mA, the present invention can reduce the total resistance by integrating the lateral magneto-optical crystal and the magnetoresistance. To improve nonlinearity; the best current-dependent magnetic sensitivity measured at a supply voltage of 2.7 volts and a bias current of 100 mA is 0.385 volts/ampere. The best magnetic sensitivity is 9.564. Millivolt/flux density, minimum nonlinearity error is 4.03%, and the minimum compensation voltage is 18.85 millivolts. If the Hall sensor chip proposed by the present invention is used to detect the current signal in the circuit, it can be widely applied to the AC and DC motor because of its high sensitivity, good isolation capability, large current measurement range, and low power consumption. Drive or industrial control applications.

The detailed description of the preferred embodiments of the present invention is intended to be limited to the scope of the invention, and is not intended to limit the scope of the invention. The patent scope of this case.

In summary, the present invention has achieved the desired effect under the prior art structure, and is not easily understood by those skilled in the art. Furthermore, the present invention has not been disclosed before the application, and it has The progressiveness and practicability have been consistent with the application requirements of the invention patent. The application for invention is filed according to law, and you are requested to approve the application for the invention patent to encourage creation.

100‧‧‧Two-dimensional folding Hall sensing element

A, A’‧‧‧ points

B‧‧‧P type semiconductor substrate

B _Y ‧‧‧Y-axis magnetic field direction

W‧‧‧N well

1‧‧‧First Sensing Department

C _in ‧‧‧first central terminal

C ₁₁ , C ₁₂ , C ₁₃ , C ₁₄ ‧ ‧ first control terminal

S ₁₁ , S ₁₂ , S ₁₃ , S ₁₄ ‧ ‧ first sensing terminal

2‧‧‧Second Sensing Department

C _out ‧‧‧second central terminal

C ₂₁ , C ₂₂ , C ₂₃ , C ₂₄ ‧ ‧ second control terminal

S ₂₁ , S ₂₂ , S ₂₃ , S ₂₄ ‧‧‧second sensing terminal

G ₁ , G ₂ , G‧‧‧ protection rings

F _Z ‧‧‧Z-axis hole stress direction

I _X ‧‧‧X-axis bias current direction

Claims (8)

A two-dimensional folded Hall sensing component is fabricated in a standard 0.35 micron CMOS process; an impurity region is formed on a semiconductor substrate, and a first sensing portion is disposed on the impurity region. The first sensing portion is provided with a first central terminal, and at least four first control terminals are extended from the first central terminal, and the first control terminal is further connected with a first sensing terminal; a second sensing portion The first sensing portion is symmetrically disposed on the side of the first sensing portion; the second sensing portion is also provided with a second central terminal, and at least four of the second central terminal are extended a second control terminal, wherein the second control terminal is further connected to the second sensing terminal; wherein the second sensing terminal is corresponding to the first sensing terminal, and is electrically coupled to the first sensing terminal; wherein the first Each of the sensing portion and the second sensing portion is provided with a guard ring, which is a P-type high-concentration impurity for reducing the cross-coupling voltage. The two-dimensional folding Hall sensing component according to claim 1, wherein the first sensing portion is a cross-shaped Hall sensing component, which is disposed on a plane from a first central terminal provided by itself. Four first control terminals are extended in four vertical directions, and a first sensing terminal is connected to each of the four first control terminals. The two-dimensional folding Hall sensing component according to claim 1, wherein the second sensing portion is a cross-shaped Hall sensing component, which is disposed on a plane from a second central terminal provided by itself. Four second control terminals are connected to the four vertical directions, and the second control terminal is connected to the second sensing terminal. The second sensing terminal is corresponding to the first sensing terminal and is electrically coupled to the second sensing terminal. The first sensing terminal. The two-dimensional folded Hall sensing element according to claim 1, wherein the semiconductor substrate is a P-type semiconductor substrate and is electrically connected to a lowest potential. The two-dimensional folded Hall sensing element of claim 1, wherein the impurity region is an N-type well. The two-dimensional folding Hall sensing element according to claim 1, wherein the first central terminal and the second central terminal are N-type high-concentration impurity regions. The two-dimensional folding Hall sensing element according to claim 1, wherein the first sensing terminal and the second sensing terminal are N-type high-concentration impurity regions. The two-dimensional folding Hall sensing element according to claim 1, wherein the first control terminal and the second control terminal are P-type high-concentration impurity regions.