TW201614832A - High electron mobility transistor with periodically carbon doped gallium nitride - Google Patents

High electron mobility transistor with periodically carbon doped gallium nitride

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Publication number
TW201614832A
TW201614832A TW103142638A TW103142638A TW201614832A TW 201614832 A TW201614832 A TW 201614832A TW 103142638 A TW103142638 A TW 103142638A TW 103142638 A TW103142638 A TW 103142638A TW 201614832 A TW201614832 A TW 201614832A
Authority
TW
Taiwan
Prior art keywords
gallium nitride
layers
gan
carbon doped
doped gallium
Prior art date
Application number
TW103142638A
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English (en)
Other versions
TWI596764B (zh
Inventor
Jeffrey Craig Ramer
Karl Knieriem
Original Assignee
Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of TW201614832A publication Critical patent/TW201614832A/zh
Application granted granted Critical
Publication of TWI596764B publication Critical patent/TWI596764B/zh

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW103142638A 2014-10-02 2014-12-08 具有週期性摻雜碳之氮化鎵之高電子移動率電晶體 TWI596764B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/505,304 US9608103B2 (en) 2014-10-02 2014-10-02 High electron mobility transistor with periodically carbon doped gallium nitride

Publications (2)

Publication Number Publication Date
TW201614832A true TW201614832A (en) 2016-04-16
TWI596764B TWI596764B (zh) 2017-08-21

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Country Status (4)

Country Link
US (1) US9608103B2 (zh)
JP (1) JP6152124B2 (zh)
CN (1) CN106158946A (zh)
TW (1) TWI596764B (zh)

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US9608103B2 (en) 2017-03-28
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TWI596764B (zh) 2017-08-21
US20160099345A1 (en) 2016-04-07

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