JP6582736B2 - 窒化物半導体装置の製造方法 - Google Patents
窒化物半導体装置の製造方法 Download PDFInfo
- Publication number
- JP6582736B2 JP6582736B2 JP2015166010A JP2015166010A JP6582736B2 JP 6582736 B2 JP6582736 B2 JP 6582736B2 JP 2015166010 A JP2015166010 A JP 2015166010A JP 2015166010 A JP2015166010 A JP 2015166010A JP 6582736 B2 JP6582736 B2 JP 6582736B2
- Authority
- JP
- Japan
- Prior art keywords
- nitride semiconductor
- semiconductor layer
- layer
- region
- partial region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 112
- 150000004767 nitrides Chemical class 0.000 title claims description 111
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 claims description 20
- 238000005468 ion implantation Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000009751 slip forming Methods 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 124
- 238000010586 diagram Methods 0.000 description 24
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 20
- 239000012535 impurity Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 229910001425 magnesium ion Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000003405 preventing effect Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
[先行技術文献]
[特許文献]
[特許文献1] 特許第2540791号公報
[特許文献2] 特開平08−186332号公報
[特許文献3] 特開2009−290160号公報
Claims (10)
- 基板上に、第1の窒化物半導体層と、第2の窒化物半導体層と、第3の窒化物半導体層とをこの順で積層した第1の積層体を形成する段階と、
前記形成する段階の後、前記第3の窒化物半導体層の一部の領域を除去する段階と、
前記除去する段階の後、前記第3の窒化物半導体層が除去された前記一部の領域から少なくとも前記第2の窒化物半導体層を介して前記第1の窒化物半導体層にイオン注入する段階と、
前記イオン注入する段階の後、前記第1の積層体を熱処理する段階と
を備え、
前記第1の窒化物半導体層はAl x Ga 1−x N(0≦x<0.5)であり、
前記第2の窒化物半導体層はAl y Ga 1−y N(0.5≦y≦1)であり、
前記第3の窒化物半導体層はAl z Ga 1−z N(0≦z<0.5)である
窒化物半導体装置の製造方法。 - 前記第3の窒化物半導体層は、前記第2の窒化物半導体層の2倍以上の厚みを有し、
前記第1の窒化物半導体層の厚みは、前記第3の窒化物半導体層の厚みよりも大きい
請求項1に記載の窒化物半導体装置の製造方法。 - 前記第2の窒化物半導体層は3nm以上100nm以下の厚みを有する
請求項1または2に記載の窒化物半導体装置の製造方法。 - 前記形成する段階において、前記第2の窒化物半導体層は前記第1の窒化物半導体層上にエピタキシャル形成する
請求項1から3のいずれか一項に記載の窒化物半導体装置の製造方法。 - 前記形成する段階において、前記第1の窒化物半導体層、前記第2の窒化物半導体層および前記第3の窒化物半導体層をエピタキシャル成長法により前記基板上に連続成膜する
請求項1から4のいずれか一項に記載の窒化物半導体装置の製造方法。 - 前記除去する段階において、前記第2の窒化物半導体層が露出するまで前記第3の窒化物半導体層の前記一部の領域を除去する
請求項1から5のいずれか一項に記載の窒化物半導体装置の製造方法。 - 基板上に、第1の窒化物半導体層と、第2の窒化物半導体層と、第3の窒化物半導体層とをこの順で積層した第1の積層体を形成する段階と、
前記形成する段階の後、前記第3の窒化物半導体層の一部の領域を除去する段階と、
前記除去する段階の後、前記第3の窒化物半導体層が除去された前記一部の領域から少なくとも前記第2の窒化物半導体層を介して前記第1の窒化物半導体層にイオン注入する段階と、
前記イオン注入する段階の後、前記第1の積層体を熱処理する段階と
を備え、
前記熱処理する段階の前に、前記基板の下に前記第2の窒化物半導体層と前記第3の窒化物半導体層とをこの順で形成する段階をさらに備える
窒化物半導体装置の製造方法。 - 基板上に、第1の窒化物半導体層と、第2の窒化物半導体層と、第3の窒化物半導体層とをこの順で積層した第1の積層体を形成する段階と、
前記形成する段階の後、前記第3の窒化物半導体層の一部の領域を除去する段階と、
前記除去する段階の後、前記第3の窒化物半導体層が除去された前記一部の領域から少なくとも前記第2の窒化物半導体層を介して前記第1の窒化物半導体層にイオン注入する段階と、
前記イオン注入する段階の後、前記第1の積層体を熱処理する段階と
を備え、
前記除去する段階において、
前記第2の窒化物半導体層が露出するまで前記第3の窒化物半導体層の前記一部の領域を除去し、
前記第2の窒化物半導体層が露出しないように前記第3の窒化物半導体層の他の領域を除去する
窒化物半導体装置の製造方法。 - 基板上に、第1の窒化物半導体層と、第2の窒化物半導体層と、第3の窒化物半導体層とをこの順で積層した第1の積層体を形成する段階と、
前記形成する段階の後、前記第3の窒化物半導体層の一部の領域を除去する段階と、
前記除去する段階の後、前記第3の窒化物半導体層が除去された前記一部の領域から少なくとも前記第2の窒化物半導体層を介して前記第1の窒化物半導体層にイオン注入する段階と、
前記イオン注入する段階の後、前記第1の積層体を熱処理する段階と
を備え、
前記形成する段階において、前記第2の窒化物半導体層と前記第3の窒化物半導体層とをこの順で積層した第2の積層体を前記第1の積層体上に1以上さらに形成し、
前記除去する段階において、前記一部の領域上の前記第2の積層体を全て除去した後に、前記第3の窒化物半導体層の前記一部の領域を除去する
窒化物半導体装置の製造方法。 - 前記熱処理する段階の後に、活性領域における全ての前記第2の窒化物半導体層および前記第3の窒化物半導体層を除去する段階をさらに備える
請求項1から9のいずれか一項に記載の窒化物半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015166010A JP6582736B2 (ja) | 2015-08-25 | 2015-08-25 | 窒化物半導体装置の製造方法 |
US15/196,035 US9805930B2 (en) | 2015-08-25 | 2016-06-29 | Method of manufacturing nitride semiconductor device using laminated cap layers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015166010A JP6582736B2 (ja) | 2015-08-25 | 2015-08-25 | 窒化物半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017045799A JP2017045799A (ja) | 2017-03-02 |
JP6582736B2 true JP6582736B2 (ja) | 2019-10-02 |
Family
ID=58096641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015166010A Active JP6582736B2 (ja) | 2015-08-25 | 2015-08-25 | 窒化物半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9805930B2 (ja) |
JP (1) | JP6582736B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7294098B2 (ja) * | 2019-12-05 | 2023-06-20 | 豊田合成株式会社 | p型III族窒化物半導体の製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2540791B2 (ja) | 1991-11-08 | 1996-10-09 | 日亜化学工業株式会社 | p型窒化ガリウム系化合物半導体の製造方法。 |
JP3244980B2 (ja) | 1995-01-06 | 2002-01-07 | 株式会社東芝 | 半導体素子の製造方法 |
US6767798B2 (en) * | 2002-04-09 | 2004-07-27 | Maxim Integrated Products, Inc. | Method of forming self-aligned NPN transistor with raised extrinsic base |
KR101495381B1 (ko) * | 2007-11-21 | 2015-02-24 | 미쓰비시 가가꾸 가부시키가이샤 | 질화물 반도체의 결정 성장 방법 |
JP5621185B2 (ja) | 2008-06-02 | 2014-11-05 | 日産自動車株式会社 | 半導体装置の製造方法及び半導体装置 |
JP5453780B2 (ja) * | 2008-11-20 | 2014-03-26 | 三菱化学株式会社 | 窒化物半導体 |
US8216924B2 (en) * | 2009-10-16 | 2012-07-10 | Cree, Inc. | Methods of fabricating transistors using laser annealing of source/drain regions |
JP5578873B2 (ja) * | 2010-02-08 | 2014-08-27 | 古河電気工業株式会社 | 窒化ガリウム半導体装置及びその製造方法 |
US10033154B2 (en) * | 2010-03-03 | 2018-07-24 | Furukawa Electronic Co., Ltd. | Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element |
KR20120032329A (ko) * | 2010-09-28 | 2012-04-05 | 삼성전자주식회사 | 반도체 소자 |
US8963165B2 (en) * | 2010-12-29 | 2015-02-24 | Sharp Kabushiki Kaisha | Nitride semiconductor structure, nitride semiconductor light emitting element, nitride semiconductor transistor element, method of manufacturing nitride semiconductor structure, and method of manufacturing nitride semiconductor element |
US20150087137A1 (en) * | 2011-03-07 | 2015-03-26 | Snu R&Db Foundation | Nitride thin film stucture and method of forming the same |
TWI587512B (zh) * | 2011-05-16 | 2017-06-11 | Renesas Electronics Corp | Field effect transistor and semiconductor device |
JP5665676B2 (ja) * | 2011-07-11 | 2015-02-04 | Dowaエレクトロニクス株式会社 | Iii族窒化物エピタキシャル基板およびその製造方法 |
KR20140021746A (ko) * | 2012-08-09 | 2014-02-20 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
EP3282041B1 (en) * | 2013-02-15 | 2020-06-24 | AZUR SPACE Solar Power GmbH | P doping of group iii nitride buffer layer structure on a heterosubstrate |
WO2015029578A1 (ja) * | 2013-08-27 | 2015-03-05 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
US9608103B2 (en) * | 2014-10-02 | 2017-03-28 | Toshiba Corporation | High electron mobility transistor with periodically carbon doped gallium nitride |
US11018231B2 (en) * | 2014-12-01 | 2021-05-25 | Yale University | Method to make buried, highly conductive p-type III-nitride layers |
JP2016167500A (ja) * | 2015-03-09 | 2016-09-15 | 株式会社東芝 | 半導体装置の製造方法 |
-
2015
- 2015-08-25 JP JP2015166010A patent/JP6582736B2/ja active Active
-
2016
- 2016-06-29 US US15/196,035 patent/US9805930B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20170062220A1 (en) | 2017-03-02 |
JP2017045799A (ja) | 2017-03-02 |
US9805930B2 (en) | 2017-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5355888B2 (ja) | キャップ層および埋込みゲートを有する窒化物ベースのトランジスタを作製する方法 | |
JP6203533B2 (ja) | 注入領域および保護層を含む半導体デバイスおよびそれを形成する方法 | |
JP5406452B2 (ja) | 窒化物ベースのトランジスタ及びトランジスタ構造体のキャップ層及び/又は不活性層並びにそれらの製造方法 | |
JP5156235B2 (ja) | 窒化物ベースのトランジスタの製作方法 | |
JP5270562B2 (ja) | 埋込み層に低抵抗コンタクトを形成する打込み領域を含んだ半導体デバイスの製作方法および関連したデバイス | |
JP6052420B2 (ja) | 半導体装置の製造方法 | |
JP6260145B2 (ja) | 半導体装置の製造方法 | |
JPWO2005015642A1 (ja) | 半導体装置及びその製造方法 | |
JP2005158889A (ja) | 半導体素子形成用板状基体及びこの製造方法及びこれを使用した半導体素子 | |
JP2009200395A (ja) | Hfetおよびその製造方法 | |
JP2013123047A (ja) | エンハンスメントモードiii−窒化物デバイスおよびその製造方法 | |
JP4776162B2 (ja) | 高電子移動度トランジスタ及び高電子移動度トランジスタの製造方法 | |
JP4876927B2 (ja) | 半導体デバイスを形成する方法 | |
CN110854185A (zh) | 半导体装置 | |
WO2012132407A1 (ja) | 窒化物系半導体デバイス及びその製造方法 | |
JP2009094337A (ja) | 半導体素子の製造方法 | |
JP2005311028A (ja) | 窒化物半導体装置及びその製造方法 | |
JP2006351762A (ja) | 半導体装置及びその製造方法 | |
JP2010232503A (ja) | 半導体装置および半導体装置の製造方法 | |
JP6582736B2 (ja) | 窒化物半導体装置の製造方法 | |
CN212182338U (zh) | 半导体结构 | |
CN111446296B (zh) | p型栅增强型氮化镓基高迁移率晶体管结构及制作方法 | |
JP2015060883A (ja) | 化合物半導体装置及びその製造方法 | |
JP2011108724A (ja) | ヘテロ接合電界効果型トランジスタ用基板、ヘテロ接合電界効果型トランジスタの製造方法およびヘテロ接合電界効果型トランジスタ | |
CN112837999A (zh) | 制造半导体器件的方法和半导体器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180712 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190328 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190402 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190528 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190806 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190819 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6582736 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |