TW201614101A - Film forming apparatus, susceptor, and film forming method - Google Patents

Film forming apparatus, susceptor, and film forming method

Info

Publication number
TW201614101A
TW201614101A TW104120947A TW104120947A TW201614101A TW 201614101 A TW201614101 A TW 201614101A TW 104120947 A TW104120947 A TW 104120947A TW 104120947 A TW104120947 A TW 104120947A TW 201614101 A TW201614101 A TW 201614101A
Authority
TW
Taiwan
Prior art keywords
susceptor
film forming
outer circumferential
substrate
forming apparatus
Prior art date
Application number
TW104120947A
Other languages
English (en)
Other versions
TWI570265B (zh
Inventor
Hideki Ito
Hidekazu Tsuchida
Isaho Kamata
Masahiko Ito
Masami Naito
Hiroaki Fujibayashi
Katsumi Suzuki
Koichi Nishikawa
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Publication of TW201614101A publication Critical patent/TW201614101A/zh
Application granted granted Critical
Publication of TWI570265B publication Critical patent/TWI570265B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW104120947A 2014-07-24 2015-06-29 Film forming apparatus, base, and film forming method TWI570265B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014150763A JP6444641B2 (ja) 2014-07-24 2014-07-24 成膜装置、サセプタ、及び成膜方法

Publications (2)

Publication Number Publication Date
TW201614101A true TW201614101A (en) 2016-04-16
TWI570265B TWI570265B (zh) 2017-02-11

Family

ID=55166249

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104120947A TWI570265B (zh) 2014-07-24 2015-06-29 Film forming apparatus, base, and film forming method

Country Status (4)

Country Link
US (1) US10584417B2 (zh)
JP (1) JP6444641B2 (zh)
KR (1) KR101719909B1 (zh)
TW (1) TWI570265B (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180171471A1 (en) * 2016-12-21 2018-06-21 Nuflare Technology, Inc. Vapor phase growth method
TWI653368B (zh) 2016-06-09 2019-03-11 德商世創電子材料公司 用於保持半導體晶圓的基座、用於在半導體晶圓的正面上沉積磊晶層的方法、以及具有磊晶層的半導體晶圓
TWI792279B (zh) * 2020-05-08 2023-02-11 日商紐富來科技股份有限公司 成膜裝置及具有開口部的板
CN116851046A (zh) * 2023-05-19 2023-10-10 北京交通大学 一种真空条件下高低温控制系统

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Publication number Priority date Publication date Assignee Title
JP5732284B2 (ja) * 2010-08-27 2015-06-10 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
US10346074B2 (en) * 2015-11-22 2019-07-09 Synamedia Limited Method of compressing parity data upon writing
JP2020088216A (ja) * 2018-11-28 2020-06-04 住友電気工業株式会社 気相成長装置およびエピ基板の製造方法
JP7188250B2 (ja) * 2019-04-11 2022-12-13 株式会社Sumco 気相成長装置及びこれに用いられるキャリア

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI653368B (zh) 2016-06-09 2019-03-11 德商世創電子材料公司 用於保持半導體晶圓的基座、用於在半導體晶圓的正面上沉積磊晶層的方法、以及具有磊晶層的半導體晶圓
US10865499B2 (en) 2016-06-09 2020-12-15 Siltronic Ag Susceptor for holding a semiconductor wafer, method for depositing an epitaxial layer on a front side of a semiconductor wafer, and semiconductor wafer with epitaxial layer
US20180171471A1 (en) * 2016-12-21 2018-06-21 Nuflare Technology, Inc. Vapor phase growth method
KR20180072545A (ko) * 2016-12-21 2018-06-29 가부시키가이샤 뉴플레어 테크놀로지 기상 성장 방법
US10351949B2 (en) 2016-12-21 2019-07-16 Nuflare Technology, Inc. Vapor phase growth method
KR102050369B1 (ko) * 2016-12-21 2019-11-29 가부시키가이샤 뉴플레어 테크놀로지 기상 성장 방법
TWI679683B (zh) * 2016-12-21 2019-12-11 日商紐富來科技股份有限公司 氣相成長方法
TWI792279B (zh) * 2020-05-08 2023-02-11 日商紐富來科技股份有限公司 成膜裝置及具有開口部的板
CN116851046A (zh) * 2023-05-19 2023-10-10 北京交通大学 一种真空条件下高低温控制系统

Also Published As

Publication number Publication date
US20160024652A1 (en) 2016-01-28
JP2016025309A (ja) 2016-02-08
JP6444641B2 (ja) 2018-12-26
TWI570265B (zh) 2017-02-11
KR20160012918A (ko) 2016-02-03
KR101719909B1 (ko) 2017-03-24
US10584417B2 (en) 2020-03-10

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