TW201612909A - Semiconductor memory device, memory controller and memory system - Google Patents

Semiconductor memory device, memory controller and memory system

Info

Publication number
TW201612909A
TW201612909A TW104106915A TW104106915A TW201612909A TW 201612909 A TW201612909 A TW 201612909A TW 104106915 A TW104106915 A TW 104106915A TW 104106915 A TW104106915 A TW 104106915A TW 201612909 A TW201612909 A TW 201612909A
Authority
TW
Taiwan
Prior art keywords
command
memory
data
instructing
writing
Prior art date
Application number
TW104106915A
Other languages
English (en)
Inventor
Kenichi Abe
Masanobu Shirakawa
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW201612909A publication Critical patent/TW201612909A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5648—Multilevel memory programming, reading or erasing operations wherein the order or sequence of the operations is relevant

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
TW104106915A 2014-09-17 2015-03-04 Semiconductor memory device, memory controller and memory system TW201612909A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014188490A JP2016062624A (ja) 2014-09-17 2014-09-17 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW201612909A true TW201612909A (en) 2016-04-01

Family

ID=55314730

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104106915A TW201612909A (en) 2014-09-17 2015-03-04 Semiconductor memory device, memory controller and memory system

Country Status (3)

Country Link
US (1) US9269445B1 (zh)
JP (1) JP2016062624A (zh)
TW (1) TW201612909A (zh)

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KR102313017B1 (ko) * 2015-08-21 2021-10-18 삼성전자주식회사 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 쓰기를 제어하는 컨트롤러를 포함하는 스토리지 장치 및 스토리지 장치의 동작 방법
US9721663B1 (en) * 2016-02-18 2017-08-01 Sandisk Technologies Llc Word line decoder circuitry under a three-dimensional memory array
JP6433933B2 (ja) 2016-03-14 2018-12-05 東芝メモリ株式会社 半導体記憶装置及びメモリシステム
JP2018005959A (ja) * 2016-06-30 2018-01-11 東芝メモリ株式会社 メモリシステムおよび書き込み方法
US10381094B2 (en) 2016-10-11 2019-08-13 Macronix International Co., Ltd. 3D memory with staged-level multibit programming
CN107919156B (zh) * 2016-10-11 2020-06-30 旺宏电子股份有限公司 存储器元件及其应用
JP2019057352A (ja) 2017-09-21 2019-04-11 東芝メモリ株式会社 メモリシステム
US10818358B2 (en) 2017-09-22 2020-10-27 Toshiba Memory Corporation Memory system including a semiconductor memory having a memory cell and a write circuit configured to write data to the memory cell
US10614886B2 (en) * 2017-09-22 2020-04-07 Samsung Electronics Co., Ltd. Nonvolatile memory device and a method of programming the nonvolatile memory device
JP6967959B2 (ja) * 2017-12-08 2021-11-17 キオクシア株式会社 メモリシステムおよび制御方法
JP2019117679A (ja) 2017-12-27 2019-07-18 東芝メモリ株式会社 半導体記憶装置
US10515700B2 (en) * 2018-02-27 2019-12-24 Toshiba Memory Corporation Semiconductor storage device and memory system
JP2019169205A (ja) 2018-03-22 2019-10-03 東芝メモリ株式会社 メモリシステム
JP2020042885A (ja) 2018-09-13 2020-03-19 キオクシア株式会社 半導体記憶装置
JP2020140747A (ja) 2019-02-27 2020-09-03 キオクシア株式会社 半導体記憶装置
CN110892482B (zh) * 2019-10-12 2021-01-29 长江存储科技有限责任公司 对存储器件进行编程的方法及相关存储器件
KR20220002606A (ko) 2019-10-18 2022-01-06 양쯔 메모리 테크놀로지스 씨오., 엘티디. 메모리 장치를 프로그래밍하고 검증하는 방법 및 관련 메모리 장치
KR20210081641A (ko) * 2019-12-24 2021-07-02 에스케이하이닉스 주식회사 스토리지 장치 및 그 동작 방법
WO2021192051A1 (ja) * 2020-03-24 2021-09-30 キオクシア株式会社 半導体記憶装置
KR20210126396A (ko) * 2020-04-10 2021-10-20 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
CN115064200A (zh) 2020-04-29 2022-09-16 长江存储科技有限责任公司 存储器件及其编程方法
US11282580B2 (en) * 2020-05-29 2022-03-22 Western Digital Technologies, Inc. Data storage device with foggy-fine program sequence for reducing neighbor wordline interference

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Publication number Priority date Publication date Assignee Title
JP3857458B2 (ja) 1999-03-15 2006-12-13 岩手東芝エレクトロニクス株式会社 不揮発性半導体記憶装置
US7420847B2 (en) * 2004-12-14 2008-09-02 Sandisk Corporation Multi-state memory having data recovery after program fail
JP4157563B2 (ja) 2006-01-31 2008-10-01 株式会社東芝 半導体集積回路装置
JP5016832B2 (ja) 2006-03-27 2012-09-05 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP4940300B2 (ja) 2006-07-20 2012-05-30 サンディスク コーポレイション プログラミング中における結合の補償
JP2008085249A (ja) 2006-09-29 2008-04-10 Toshiba Corp 不揮発性半導体記憶装置
US8130552B2 (en) 2008-09-11 2012-03-06 Sandisk Technologies Inc. Multi-pass programming for memory with reduced data storage requirement
KR20120004742A (ko) * 2010-07-07 2012-01-13 주식회사 하이닉스반도체 비휘발성 메모리 및 이의 프로그램 방법
JP2013058275A (ja) * 2011-09-07 2013-03-28 Toshiba Corp 半導体記憶装置
US8837223B2 (en) 2011-11-21 2014-09-16 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method for manufacuring the same
KR102070724B1 (ko) * 2013-03-29 2020-01-30 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 구동 방법
US9064968B2 (en) * 2013-08-19 2015-06-23 Phison Electronics Corp. Non-volatile memory device and operation and fabricating methods thereof
KR20150060144A (ko) * 2013-11-26 2015-06-03 삼성전자주식회사 비휘발성 메모리 장치의 동작 방법

Also Published As

Publication number Publication date
US9269445B1 (en) 2016-02-23
JP2016062624A (ja) 2016-04-25
US20160078949A1 (en) 2016-03-17

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