BR112015029848A8 - dispositivos de recepção e de transmissão, métodos para recepção de um dispositivo de recepção e para transmissão de um dispositivo de transmissão, e, meio de armazenamento legível por computador - Google Patents

dispositivos de recepção e de transmissão, métodos para recepção de um dispositivo de recepção e para transmissão de um dispositivo de transmissão, e, meio de armazenamento legível por computador Download PDF

Info

Publication number
BR112015029848A8
BR112015029848A8 BR112015029848A BR112015029848A BR112015029848A8 BR 112015029848 A8 BR112015029848 A8 BR 112015029848A8 BR 112015029848 A BR112015029848 A BR 112015029848A BR 112015029848 A BR112015029848 A BR 112015029848A BR 112015029848 A8 BR112015029848 A8 BR 112015029848A8
Authority
BR
Brazil
Prior art keywords
receiving
transmitting
memory
devices
computer
Prior art date
Application number
BR112015029848A
Other languages
English (en)
Other versions
BR112015029848B1 (pt
BR112015029848A2 (pt
Inventor
K Ramanujan Raj
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of BR112015029848A2 publication Critical patent/BR112015029848A2/pt
Publication of BR112015029848A8 publication Critical patent/BR112015029848A8/pt
Publication of BR112015029848B1 publication Critical patent/BR112015029848B1/pt

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C14/00Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0009Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a DRAM cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/08Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0804Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with main memory updating
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/08Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0844Multiple simultaneous or quasi-simultaneous cache accessing
    • G06F12/0846Cache with multiple tag or data arrays being simultaneously accessible
    • G06F12/0851Cache with interleaved addressing
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/08Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0866Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches for peripheral storage systems, e.g. disk cache
    • G06F12/0868Data transfer between cache memory and other subsystems, e.g. storage devices or host systems
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/31Providing disk cache in a specific location of a storage system
    • G06F2212/311In host system
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7203Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00Energy efficient computing, e.g. low power processors, power management or thermal management

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
  • Dram (AREA)

Abstract

resumo patente de invenção para: "dispositivo de memória híbrido". trata-se de dispositivos de memória, controladores e dispositivos eletrônicos que compreendem dispositivos de memória. em uma modalidade, um dispositivo de memória compreende uma memória volátil, uma memória não volátil e um controlador que compreende um armazenamento temporário de memória e uma lógica para transferir dados entre a memória não volátil e a memória volátil por meio do armazenamento temporário de memória em resposta a solicitações de um aplicativo, em que os dados no armazenamento temporário de memória são acessíveis ao aplicativo. além disso, outras modalidades são reveladas e reivindicadas.
BR112015029848-6A 2013-06-27 2014-06-23 Sistema compreendendo um dispositivo de memória e um driver de sistema operacional para gerenciar operações de acesso a memória entre pelo menos um aplicativo e o dispositivo de memória BR112015029848B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/928,694 2013-06-27
US13/928,694 US9129674B2 (en) 2013-06-27 2013-06-27 Hybrid memory device
PCT/US2014/043678 WO2014209891A1 (en) 2013-06-27 2014-06-23 Hybrid memory device

Publications (3)

Publication Number Publication Date
BR112015029848A2 BR112015029848A2 (pt) 2017-07-25
BR112015029848A8 true BR112015029848A8 (pt) 2019-12-24
BR112015029848B1 BR112015029848B1 (pt) 2022-12-13

Family

ID=52115471

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112015029848-6A BR112015029848B1 (pt) 2013-06-27 2014-06-23 Sistema compreendendo um dispositivo de memória e um driver de sistema operacional para gerenciar operações de acesso a memória entre pelo menos um aplicativo e o dispositivo de memória

Country Status (9)

Country Link
US (1) US9129674B2 (pt)
EP (1) EP3014623B1 (pt)
JP (1) JP6112594B2 (pt)
KR (1) KR101719092B1 (pt)
CN (1) CN105247617B (pt)
BR (1) BR112015029848B1 (pt)
RU (1) RU2627100C2 (pt)
TW (1) TWI537725B (pt)
WO (1) WO2014209891A1 (pt)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10198350B2 (en) * 2011-07-28 2019-02-05 Netlist, Inc. Memory module having volatile and non-volatile memory subsystems and method of operation
US10380022B2 (en) * 2011-07-28 2019-08-13 Netlist, Inc. Hybrid memory module and system and method of operating the same
US10838646B2 (en) * 2011-07-28 2020-11-17 Netlist, Inc. Method and apparatus for presearching stored data
US9129674B2 (en) 2013-06-27 2015-09-08 Intel Corporation Hybrid memory device
KR20160083926A (ko) 2013-11-07 2016-07-12 넷리스트 인코포레이티드 하이브리드 메모리 모듈, 및 그를 동작시키는 시스템 및 방법
US10248328B2 (en) * 2013-11-07 2019-04-02 Netlist, Inc. Direct data move between DRAM and storage on a memory module
US11182284B2 (en) * 2013-11-07 2021-11-23 Netlist, Inc. Memory module having volatile and non-volatile memory subsystems and method of operation
US20150347151A1 (en) * 2014-05-28 2015-12-03 Diablo Technologies Inc. System and method for booting from a non-volatile memory
CN106155926B (zh) * 2015-04-09 2019-11-26 澜起科技股份有限公司 存储器及存储器的数据交互方法
CN107710175B (zh) * 2015-04-20 2021-12-14 奈特力斯股份有限公司 存储器模块以及操作系统和方法
US10573385B2 (en) 2015-05-28 2020-02-25 Intel Corporation Ferroelectric based memory cell with non-volatile retention
US9799402B2 (en) 2015-06-08 2017-10-24 Samsung Electronics Co., Ltd. Nonvolatile memory device and program method thereof
US10078448B2 (en) 2015-07-08 2018-09-18 Samsung Electronics Co., Ltd. Electronic devices and memory management methods thereof
US10725689B2 (en) 2015-08-31 2020-07-28 Hewlett Packard Enterprise Development Lp Physical memory region backup of a volatile memory to a non-volatile memory
US10303372B2 (en) 2015-12-01 2019-05-28 Samsung Electronics Co., Ltd. Nonvolatile memory device and operation method thereof
US10152262B2 (en) 2016-05-03 2018-12-11 Micron Technology, Inc. Memory access techniques in memory devices with multiple partitions
WO2018067168A1 (en) * 2016-10-07 2018-04-12 Hewlett-Packard Development Company, L.P. Hybrid memory devices
KR20180078512A (ko) * 2016-12-30 2018-07-10 삼성전자주식회사 반도체 장치
US20180239725A1 (en) * 2017-02-17 2018-08-23 Intel Corporation Persistent Remote Direct Memory Access
US11175853B2 (en) * 2017-05-09 2021-11-16 Samsung Electronics Co., Ltd. Systems and methods for write and flush support in hybrid memory
KR102427323B1 (ko) * 2017-11-08 2022-08-01 삼성전자주식회사 반도체 메모리 모듈, 반도체 메모리 시스템, 그리고 반도체 메모리 모듈을 액세스하는 액세스 방법
US10705963B2 (en) * 2018-03-21 2020-07-07 Micron Technology, Inc. Latency-based storage in a hybrid memory system
TW202014898A (zh) 2018-10-04 2020-04-16 宏碁股份有限公司 電腦系統、其遊戲載入方法及電腦程式產品
US11537521B2 (en) 2019-06-05 2022-12-27 Samsung Electronics Co., Ltd. Non-volatile dual inline memory module (NVDIMM) for supporting dram cache mode and operation method of NVDIMM
US11513725B2 (en) * 2019-09-16 2022-11-29 Netlist, Inc. Hybrid memory module having a volatile memory subsystem and a module controller sourcing read strobes to accompany read data from the volatile memory subsystem
CN113050874A (zh) * 2019-12-26 2021-06-29 华为技术有限公司 一种内存设置方法以及装置
US11954358B2 (en) * 2020-06-23 2024-04-09 Micron Technology, Inc. Cache management in a memory subsystem

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62224845A (ja) * 1986-03-26 1987-10-02 Hitachi Ltd 仮想記憶方式
JPH04195442A (ja) * 1990-11-28 1992-07-15 Fujitsu Ltd アドレス変換機構を利用したメモリ管理方式
JPH07230411A (ja) * 1994-02-18 1995-08-29 Fujitsu Ltd フラッシュメモリカード装置
JP2000251035A (ja) 1999-02-26 2000-09-14 Hitachi Ltd メモリカード
JP4211254B2 (ja) * 2001-12-04 2009-01-21 関西電力株式会社 固体酸化物形燃料電池
US20060294295A1 (en) * 2005-06-24 2006-12-28 Yukio Fukuzo DRAM chip device well-communicated with flash memory chip and multi-chip package comprising such a device
KR101197556B1 (ko) 2006-01-09 2012-11-09 삼성전자주식회사 불 휘발성 메모리의 프로그램 동작을 검증하는 장치 및방법, 그리고 그 장치를 포함한 메모리 카드
KR100772863B1 (ko) * 2006-01-13 2007-11-02 삼성전자주식회사 요구 페이징 기법을 적용한 시스템에서 페이지 교체 수행시간을 단축시키는 방법 및 장치
KR100699893B1 (ko) * 2006-01-23 2007-03-28 삼성전자주식회사 하이브리드 디스크 드라이브 및 하이브리드 디스크드라이브의 데이터 제어방법
US7716411B2 (en) 2006-06-07 2010-05-11 Microsoft Corporation Hybrid memory device with single interface
US7564722B2 (en) 2007-01-22 2009-07-21 Micron Technology, Inc. Memory system and method having volatile and non-volatile memory devices at same hierarchical level
JP2009104687A (ja) * 2007-10-22 2009-05-14 Fujitsu Ltd 記憶装置及び制御回路
US7855916B2 (en) 2007-10-24 2010-12-21 Rao G R Mohan Nonvolatile memory systems with embedded fast read and write memories
US8041895B2 (en) * 2008-01-28 2011-10-18 Spansion Llc Translation table coherency mecahanism using cache way and set index write buffers
US8560761B2 (en) * 2008-03-31 2013-10-15 Spansion Llc Memory resource management for a flash aware kernel
JP5085446B2 (ja) * 2008-07-14 2012-11-28 株式会社東芝 三次元メモリデバイス
KR101547326B1 (ko) * 2008-12-04 2015-08-26 삼성전자주식회사 트랜지스터 및 그 제조방법
KR101715048B1 (ko) * 2010-09-13 2017-03-13 삼성전자주식회사 부스팅 전하 누설을 감소시키기 위한 메모리 장치 및 이를 포함하는 시스템
US8567475B2 (en) * 2011-05-04 2013-10-29 Kenneth Eugene Boone Overhead gate systems
US9129674B2 (en) 2013-06-27 2015-09-08 Intel Corporation Hybrid memory device

Also Published As

Publication number Publication date
RU2015151127A (ru) 2017-05-31
JP2016523411A (ja) 2016-08-08
TWI537725B (zh) 2016-06-11
US20150003175A1 (en) 2015-01-01
RU2627100C2 (ru) 2017-08-03
BR112015029848B1 (pt) 2022-12-13
EP3014623B1 (en) 2019-03-13
CN105247617A (zh) 2016-01-13
EP3014623A1 (en) 2016-05-04
KR20150140361A (ko) 2015-12-15
BR112015029848A2 (pt) 2017-07-25
TW201508483A (zh) 2015-03-01
JP6112594B2 (ja) 2017-04-12
EP3014623A4 (en) 2017-03-01
US9129674B2 (en) 2015-09-08
CN105247617B (zh) 2020-06-12
WO2014209891A1 (en) 2014-12-31
KR101719092B1 (ko) 2017-04-04

Similar Documents

Publication Publication Date Title
BR112015029848A8 (pt) dispositivos de recepção e de transmissão, métodos para recepção de um dispositivo de recepção e para transmissão de um dispositivo de transmissão, e, meio de armazenamento legível por computador
TW201612909A (en) Semiconductor memory device, memory controller and memory system
CL2016000555A1 (es) Terminación de comando de averiguación en memorias flash
BR112015027470A2 (pt) ajuste de desempenho imediato para dispositivos de armazenamento de estado sólido
EP3314363A4 (en) Opportunistic power management for managing intermittent power available to data processing device having semi-non-volatile memory or non-volatile memory
EP3254286A4 (en) Apparatuses and methods for parallel writing to multiple memory device locations
EP3198440A4 (en) Exchanging ecc metadata between memory and host system
TW201612910A (en) Semiconductor memory device
BR112015025614A8 (pt) meio de armazenamento legível por computador, sistema e método implementado por computador
TW201612908A (en) On-chip copying of data between NAND flash memory and ReRAM of a memory die
EP2972901A4 (en) Managing the write performance of an asymmetric memory system
BR112017009378A2 (pt) sistemas, métodos e aparelho para capacitores de sintonia integrados em estrutura de bobina de carregamento
BR112015019003A2 (pt) dispositivo para um sistema de construção de website, e método para um sistema de construção de website
EP3186713A4 (en) Routing direct memory access requests in a virtualized computing environment
EP3055863A4 (en) Data processor with memory controller for high reliability operation and method
BR112017006639A2 (pt) método, aparelho e sistema de gravação de dados
MX363170B (es) Método para almacenar datos por medio de un dispositivo de almacenamiento y dispositivo de almacenamiento.
BR112015019099A2 (pt) Método implementado por computador para gerar uma pilha de chamadas assíncronas e sistema de computador
EP3046109A4 (en) Semiconductor storage device and memory system
WO2015112148A3 (en) Atomically committing write requests
GB2525551A (en) Boosting remote direct memory access performance using cryptographic hash based approach
IN2014MU00845A (pt)
JP2014022036A5 (pt)
IN2013CH05362A (pt)
EP3155499A4 (en) Memory controller power management based on latency

Legal Events

Date Code Title Description
B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B350 Update of information on the portal [chapter 15.35 patent gazette]
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B07A Application suspended after technical examination (opinion) [chapter 7.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 23/06/2014, OBSERVADAS AS CONDICOES LEGAIS