TW201542873A - 連續鉑層之無電沉積 - Google Patents
連續鉑層之無電沉積 Download PDFInfo
- Publication number
- TW201542873A TW201542873A TW104104496A TW104104496A TW201542873A TW 201542873 A TW201542873 A TW 201542873A TW 104104496 A TW104104496 A TW 104104496A TW 104104496 A TW104104496 A TW 104104496A TW 201542873 A TW201542873 A TW 201542873A
- Authority
- TW
- Taiwan
- Prior art keywords
- solution
- platinum
- ions
- providing
- containing layer
- Prior art date
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract description 161
- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 58
- 230000008021 deposition Effects 0.000 title claims description 16
- 230000006641 stabilisation Effects 0.000 claims abstract description 58
- 238000011105 stabilization Methods 0.000 claims abstract description 58
- 239000000203 mixture Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000007772 electroless plating Methods 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000000243 solution Substances 0.000 claims description 110
- 150000002500 ions Chemical class 0.000 claims description 41
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 21
- -1 platinum ions Chemical class 0.000 claims description 16
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 15
- 239000012895 dilution Substances 0.000 claims description 10
- 238000010790 dilution Methods 0.000 claims description 10
- 229940050410 gluconate Drugs 0.000 claims description 9
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 claims description 8
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 239000000174 gluconic acid Substances 0.000 claims description 5
- 235000012208 gluconic acid Nutrition 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000003381 stabilizer Substances 0.000 claims description 3
- SOBHUZYZLFQYFK-UHFFFAOYSA-K trisodium;hydroxy-[[phosphonatomethyl(phosphonomethyl)amino]methyl]phosphinate Chemical compound [Na+].[Na+].[Na+].OP(O)(=O)CN(CP(O)([O-])=O)CP([O-])([O-])=O SOBHUZYZLFQYFK-UHFFFAOYSA-K 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- 229940095064 tartrate Drugs 0.000 claims 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-L L-tartrate(2-) Chemical compound [O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O FEWJPZIEWOKRBE-JCYAYHJZSA-L 0.000 claims 1
- 239000010936 titanium Substances 0.000 description 46
- 235000012431 wafers Nutrition 0.000 description 12
- 239000003638 chemical reducing agent Substances 0.000 description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 238000007747 plating Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001509 sodium citrate Substances 0.000 description 3
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 3
- 229940038773 trisodium citrate Drugs 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 125000004383 glucosinolate group Chemical group 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical class OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical group [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- XKCXPFQPTBUKKQ-UHFFFAOYSA-N [Pt].NN Chemical compound [Pt].NN XKCXPFQPTBUKKQ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RMIODHQZRUFFFF-UHFFFAOYSA-N methoxyacetic acid Chemical compound COCC(O)=O RMIODHQZRUFFFF-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000007420 reactivation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 229940125725 tranquilizer Drugs 0.000 description 1
- 239000003204 tranquilizing agent Substances 0.000 description 1
- 230000002936 tranquilizing effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1617—Purification and regeneration of coating baths
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrochemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/182,987 US9469902B2 (en) | 2014-02-18 | 2014-02-18 | Electroless deposition of continuous platinum layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201542873A true TW201542873A (zh) | 2015-11-16 |
Family
ID=53797584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104104496A TW201542873A (zh) | 2014-02-18 | 2015-02-11 | 連續鉑層之無電沉積 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9469902B2 (enExample) |
| JP (1) | JP2015151628A (enExample) |
| KR (1) | KR102455120B1 (enExample) |
| CN (1) | CN104851837B (enExample) |
| SG (1) | SG10201501150YA (enExample) |
| TW (1) | TW201542873A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003008537A2 (en) | 2001-04-06 | 2003-01-30 | Mannkind Corporation | Epitope sequences |
| EP1752160A3 (en) | 2001-04-06 | 2007-05-30 | Mannkind Corporation | Epitope sequences |
| ATE546153T1 (de) | 2003-06-17 | 2012-03-15 | Mannkind Corp | Kombinationen von tumor-assoziierten antigenen zur behandlung von verschiedenen krebstypen |
| MXPA05013973A (es) | 2003-06-17 | 2006-03-02 | Mannkind Corp | Metodos para producir, mejorar y sustentar respuestas inmunes contra epitopes restringidos mhc clase i, para propositos profilacticos o terapeuticos. |
| EP2332971B1 (en) | 2004-06-17 | 2016-02-17 | MannKind Corporation | Epitope analogs |
| US7511119B2 (en) | 2005-06-17 | 2009-03-31 | Mannkind Corporation | PRAME peptide analogues |
| CA2612516C (en) | 2005-06-17 | 2015-03-24 | Mannkind Corporation | Methods and compositions to elicit multivalent immune responses against dominant and subdominant epitopes, expressed on cancer cells and tumor stroma |
| KR20080033271A (ko) | 2005-06-17 | 2008-04-16 | 맨카인드 코포레이션 | 암종을 위한 다가 동반이행 및 증폭형 면역치료제 |
| WO2011050344A2 (en) | 2009-10-23 | 2011-04-28 | Mannkind Corporation | Cancer immunotherapy and method of treatment |
| US9499913B2 (en) * | 2014-04-02 | 2016-11-22 | Lam Research Corporation | Electroless deposition of continuous platinum layer using complexed Co2+ metal ion reducing agent |
| LT6547B (lt) | 2016-12-28 | 2018-08-10 | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | Platinos cheminio nusodinimo tirpalas ir platinos tolydžios dangos formavimo būdas |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3698939A (en) * | 1970-07-09 | 1972-10-17 | Frank H Leaman | Method and composition of platinum plating |
| US4004051A (en) * | 1974-02-15 | 1977-01-18 | Crown City Plating Company | Aqueous noble metal suspensions for one stage activation of nonconductors for electroless plating |
| US4279951A (en) * | 1979-01-15 | 1981-07-21 | Mine Safety Appliances Company | Method for the electroless deposition of palladium |
| JPH04325688A (ja) | 1991-04-26 | 1992-11-16 | Murata Mfg Co Ltd | 無電解めっき浴 |
| US5360471A (en) * | 1992-08-05 | 1994-11-01 | Murata Manufacturing Co., Ltd. | Electroless solder plating bath |
| JP3116637B2 (ja) | 1993-03-12 | 2000-12-11 | 株式会社村田製作所 | 無電解めっき液 |
| JP3920462B2 (ja) * | 1998-07-13 | 2007-05-30 | 株式会社大和化成研究所 | 貴金属を化学的還元析出によって得るための水溶液 |
| JP3455709B2 (ja) | 1999-04-06 | 2003-10-14 | 株式会社大和化成研究所 | めっき方法とそれに用いるめっき液前駆体 |
| JP3744300B2 (ja) * | 1999-04-06 | 2006-02-08 | 住友電気工業株式会社 | 導電性多孔質とそれを用いた金属多孔質体および電池用極板 |
| US20020152955A1 (en) * | 1999-12-30 | 2002-10-24 | Yezdi Dordi | Apparatus and method for depositing an electroless solution |
| DE10048844A1 (de) * | 2000-10-02 | 2002-04-11 | Basf Ag | Verfahren zur Herstellung von Platinmetall-Katalysatoren |
| EP1489695B1 (en) * | 2002-03-04 | 2008-09-10 | Sumitomo Electric Industries, Ltd. | Anisotropic conductive film and method for producing the same |
| JP2004115885A (ja) * | 2002-09-27 | 2004-04-15 | Tokyo Electron Ltd | 無電解メッキ方法 |
| JP2009016389A (ja) * | 2007-06-29 | 2009-01-22 | Panasonic Corp | 半導体レーザ素子およびその製造方法 |
| JP4986174B2 (ja) * | 2008-10-30 | 2012-07-25 | 独立行政法人産業技術総合研究所 | マイクロリアクター用反応管及びその製造方法 |
| KR20120086354A (ko) * | 2009-11-16 | 2012-08-02 | 바스프 에스이 | 금속 섬 코팅 및 합성 방법 |
| KR101079775B1 (ko) * | 2010-04-01 | 2011-11-03 | 경희대학교 산학협력단 | 전기방사에 이은 무전해 도금을 통한 전기 전도성 나노섬유 제조 방법 |
| US8632628B2 (en) * | 2010-10-29 | 2014-01-21 | Lam Research Corporation | Solutions and methods for metal deposition |
| EP2481835B1 (en) * | 2011-01-28 | 2013-09-11 | Atotech Deutschland GmbH | Autocatalytic plating bath composition for deposition of tin and tin alloys |
| JP2013161928A (ja) * | 2012-02-03 | 2013-08-19 | Sumitomo Electric Ind Ltd | プリント配線板用基材およびプリント配線板用基材の製造方法 |
| US9499913B2 (en) * | 2014-04-02 | 2016-11-22 | Lam Research Corporation | Electroless deposition of continuous platinum layer using complexed Co2+ metal ion reducing agent |
| US9428836B2 (en) * | 2014-04-29 | 2016-08-30 | Lam Research Corporation | Electroless deposition of continuous cobalt layer using complexed Ti3+ metal ions as reducing agents |
| US20150307995A1 (en) * | 2014-04-29 | 2015-10-29 | Lam Research Corporation | ELECTROLESS DEPOSITION OF CONTINUOUS PALLADIUM LAYER USING COMPLEXED Co2+ METAL IONS OR Ti3+ METAL IONS AS REDUCING AGENTS |
| US20150307994A1 (en) * | 2014-04-29 | 2015-10-29 | Lam Research Corporation | ELECTROLESS DEPOSITION OF CONTINUOUS NICKEL LAYER USING COMPLEXED Ti3+ METAL IONS AS REDUCING AGENTS |
-
2014
- 2014-02-18 US US14/182,987 patent/US9469902B2/en active Active
-
2015
- 2015-02-10 JP JP2015023742A patent/JP2015151628A/ja active Pending
- 2015-02-11 TW TW104104496A patent/TW201542873A/zh unknown
- 2015-02-13 KR KR1020150022631A patent/KR102455120B1/ko active Active
- 2015-02-13 SG SG10201501150YA patent/SG10201501150YA/en unknown
- 2015-02-16 CN CN201510084904.1A patent/CN104851837B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US9469902B2 (en) | 2016-10-18 |
| CN104851837B (zh) | 2018-03-13 |
| JP2015151628A (ja) | 2015-08-24 |
| SG10201501150YA (en) | 2015-09-29 |
| CN104851837A (zh) | 2015-08-19 |
| US20150232995A1 (en) | 2015-08-20 |
| KR20150097412A (ko) | 2015-08-26 |
| KR102455120B1 (ko) | 2022-10-14 |
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